AOD474 [AOS]
75V N-Channel MOSFET; 75V N沟道MOSFET
| 型号： | AOD474 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 75V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD474
75V N-Channel MOSFET
General Description
Product Summary
VDS
The AOD474 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
75V
10A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
< 130mΩ
< 155mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
75
±20
10
7
V
V
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TC=100°C
A
A
IDM
18
2.5
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
2
IAS
10
A
EAS
5
mJ
TC=25°C
Power Dissipation B
TC=100°C
28.5
14.5
2.1
PD
W
TA=25°C
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
17
Max
25
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
50
60
RθJC
4.3
5.2
Rev 0: July 2012
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Page 1 of 6
AOD474
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=10mA, VGS=0V
VDS=75V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
75
V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS，ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.4
nA
V
VGS(th)
ID(ON)
1.2
18
1.8
A
105
190
120
10
130
235
155
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=2A
mΩ
S
VDS=5V, ID=5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.75
1
V
Maximum Body-Diode Continuous Current
10
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
280
30
pF
pF
pF
Ω
VGS=0V, VDS=37.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
13
VGS=0V, VDS=0V, f=1MHz
1.1
2.2
3.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6
9
5
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
3
VGS=10V, VDS=37.5V, ID=5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1.2
1.5
5
VGS=10V, VDS=37.5V, RL=7.5Ω,
RGEN=3Ω
3.5
16
3.5
ns
tD(off)
tf
ns
ns
trr
IF=5A, dI/dt=500A/µs
IF=5A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
52
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2012
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Page 2 of 6
AOD474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
20
15
10
5
10V
VDS=5V
4.5V
4V
6V
3.5V
125°C
25°C
VGS=3.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
220
200
180
160
140
120
100
80
2.4
2.2
2
VGS=10V
ID=5A
VGS=4.5V
1.8
1.6
1.4
1.2
1
=4.5V
VGS
ID=2A
VGS=10V
0.8
60
0
25
50
75
100 125 150 175 200
0
2
4
6
8
10
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
260
240
220
200
180
160
140
120
100
80
1.0E+01
ID=5A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2012
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Page 3 of 6
AOD474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
VDS=37.5V
ID=5A
8
400
300
200
100
0
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
0
15
30
VDS (Volts)
Figure 8: Capacitance Characteristics
45
60
75
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
160
120
80
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
DC
0.1
TJ(Max)=175°C
TC=25°C
40
0.0
0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.2°C/W
PD
0.1
Ton
T
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2012
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Page 4 of 6
AOD474
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
25
TA=25°C
TA=100°C
20
10
15
10
5
TA=150°C
TA=125°C
1
0
1
10
100
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
10000
1000
100
10
15
TA=25°C
10
5
1
0
1E-05
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
150
175
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
10
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2012
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Page 5 of 6
AOD474
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: July 2012
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Page 6 of 6
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