AOD476 [FREESCALE]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD476 |
| 厂家： | 
Freescale |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：517K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD476
N-Channel Enhancement Mode Field
Effect Transistor
General Description
designꢀtoꢀprovideꢀexcellentꢀRDS(ON)ꢀwithꢀlowꢀgate
TheꢀAOD476ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀand
charge.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀinꢀPWM,ꢀload switchingꢀandꢀgeneralꢀpurposeꢀapplications.
Features
VDSꢀ(V)ꢀ=ꢀ20V
IDꢀ=ꢀ25Aꢀ(VGSꢀ=ꢀ10V)
RDS(ON)ꢀ<21ꢀmΩꢀ(VGSꢀ=ꢀ10V)
R
DS(ON)ꢀ<28ꢀmΩꢀ(VGSꢀ=ꢀ4.5V)
RDS(ON)ꢀ<79ꢀmΩꢀ(VGSꢀ=ꢀ2.5V)
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
DrainꢁSourceꢀVoltage
VDS
20
V
GateꢁSourceꢀVoltage
VGS
±16
25
V
A
TC=25°CꢀG
TC=100°C
ContinuousꢀDrain
Current
ID
20
PulsedꢀDrainꢀCurrentꢀC
AvalancheꢀCurrentꢀC
RepetitiveꢀavalancheꢀenergyꢀL=0.3mHꢀC
IDM
IAR
EAR
75
13
A
25
mJ
TC=25°C
PowerꢀDissipationꢀB
TC=100°C
33.3
16.7
2.5
PD
W
TA=25°C
PDSM
W
PowerꢀDissipationꢀA
1.6
TA=70°C
JunctionꢀandꢀStorageꢀTemperatureꢀRange TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Symbol
Typ
17
Max
25
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
SteadyꢁState
MaximumꢀJunctionꢁtoꢁCaseꢀB
40
50
SteadyꢁState
RθJC
3.6
4.5
1/6
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AOD476
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250uA,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
20
V
V
DS=16V,ꢀVGS=0V
1
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
uA
5
TJ=55°C
VDS=0V,ꢀVGS=±16V
VDS=VGS,ꢀꢀID=250µA
VGS=10V,ꢀVDS=5V
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
100
2
nA
V
VGS(th)
ID(ON)
0.6
75
1.26
A
V
GS=10V,ꢀID=20A
14
21
21
TJ=125°C
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
mΩ
VGS=4.5V,ꢀID=10A
VGS=2.5V,ꢀID=4A
VDS=5V,ꢀID=20A
IS=1A,ꢀVGS=0V
20
28
79
57
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrentꢀG
19
S
V
A
0.77
1
30
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
900
162
105
0.9
pF
pF
pF
Ω
VGS=0V,ꢀVDS=10V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
1.35
SWITCHING PARAMETERS
Qg(10V) TotalꢀGateꢀCharge
Qg(4.5V) TotalꢀGateꢀCharge
15
7.2
1.8
2.8
4.5
9.2
18.7
3.3
18
18
9
nC
nC
nC
nC
ns
VGS=10V,ꢀVDS=10V,ꢀID=20A
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
V
GS=10V,ꢀVDS=10V,ꢀRL=0.5Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=20A,ꢀdI/dt=100A/µs
IF=20A,ꢀdI/dt=100A/µs
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
ns
Qrr
9.5
nC
A:ꢀTheꢀvalueꢀofꢀRꢀθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1inꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwith
TꢀAꢀ=25°C.ꢀTheꢀPowerꢀdissipationꢀPDSMꢀisꢀbasedꢀonꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀꢀgiven
applicationꢀdependsꢀonꢀtheꢀuser'sꢀspecificꢀboardꢀdesign,ꢀandꢀtheꢀmaximumꢀtemperatureꢀofꢀ175°CꢀmayꢀbeꢀusedꢀifꢀtheꢀPCBꢀallowsꢀit.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=175°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupper
dissipationꢀlimitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C:ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀT J(MAX)=175°C.
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀR ꢀθJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300ꢀ µsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassuming
aꢀmaximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=175°C.
G.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀbondꢁwires.
H.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀinꢀꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT A=25°C.ꢀTheꢀSOA
curveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
*Thisꢀdeviceꢀisꢀguaranteedꢀgreenꢀafterꢀdataꢀcodeꢀ8X11ꢀ(Sepꢀ1 STꢀ2008).
Rev2:ꢀOct.ꢀ2008
2/6
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AOD476
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
100
80
60
40
20
0
10V
25°C
VDS=5V
8V
6V
125°C
ꢁ40°C
4.5V
3.5V
VGS=3V
4
0
0
1
2
3
5
1
2
3
4
5
VDS (Volts)
VGS(Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
1.60
1.40
1.20
1.00
0.80
0.60
80
VGS=10V,ꢀ20A
70
60
50
40
30
20
10
0
VGS=2.5V
VGS=4.5V,ꢀ10A
VGS=4.5V
VGS=10V
VGS=2.5V,ꢀ4A
0
5
10
15
20
25
30
ꢁ50 ꢁ25
0
25
50
75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
35
30
25
20
15
10
100
10
ID=20A
1
125°C
125°C
0.1
ꢁ40°C
0.01
25°C
25°C
0.001
0.0001
0.00001
3
4
5
6
7
8
9
10
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
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AOD476
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
8
1200
1000
800
600
400
200
0
VDS=12.5V
ID=20A
Ciss
6
4
Coss
2
Crss
0
0
3
6
9
12
15
0
5
10
15
20
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: CapacitanceCharacteristics
100
10
1
200
160
120
80
10µs
100µs
TJ(Max)=175°C
TC=25°C
DC
1ms
RDS(ON)
limited
40
TJ(Max)=175°C,ꢀTC=25°C
0
0.1
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
0.1
1
10
100
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=TC+PDM.ZθJC.RθJC
θJC=4.5°C/W
R
PD
0.1
0.01
Ton
T
SingleꢀPulse
0.0001
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD476
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
35
30
25
20
15
L ID
tA
=
BV −VDD
TA=25°C
10
0
0.000001
0.00001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.0001
0.001
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
50
30
25
20
15
10
5
TA=25°C
40
30
20
10
0
0
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
175
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note B)
10
1
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
0.1
PD
D=Ton/T
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
T
SingleꢀPulse
0.001
RθJA=50°C/W
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOD476
N-Channel Enhancement Mode Field
Effect Transistor
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
ꢁ
ꢁ
DUT
Vgs
Ig
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
ꢁ
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
UnclampedꢀInductiveꢀSwitchingꢀ(UIS)ꢀTestꢀCircuitꢀ&ꢀWaveforms
L
EAꢀꢀRꢀ=ꢀ1/2ꢀLIA2R
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
I AR
Vgs
VDC
Id
Rg
ꢁ
DUT
Vgs
Vgs
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
Vdsꢀꢁ
Ig
rr
DUT
Vgs
Isd
trr
L
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
ꢁ
Vds
6/6
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