首页 |元器件品牌

AP1322GEU [A-POWER]

TRANSISTOR 600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal;
AP1322GEU
型号： AP1322GEU
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR 600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal

开关 光电二极管 晶体管
文件： 总5页 (文件大小：71K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP1332GEU  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
20V  
D
▼ Simple Gate Drive  
600mΩ  
600mA  
▼ Small Package Outline  
S
SOT-323  
G
Description  
D
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
low on-resistance and cost-effectiveness.  
G
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
20  
Unit  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±8  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
600  
mA  
mA  
A
470  
2.5  
PD@TA=25℃  
Total Power Dissipation  
0.35  
W
Linear Derating Factor  
0.003  
-55 to 150  
-55 to 150  
W/℃  
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
℃
Thermal Data  
Symbol  
Parameter  
Value  
360  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
201019073-1/4  
AP1332GEU  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Unit  
Drain-Source Breakdown Voltage  
20  
-
-
0.02  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=4.5V, ID=600mA  
VGS=2.5V, ID=400mA  
V/℃  
RDS(ON)  
-
600 mΩ  
1000 mΩ  
-
0.5  
-
-
-
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=5V, ID=600mA  
VDS=20V, VGS=0V  
VDS=16V ,VGS=0V  
VGS=±8V  
1.25  
V
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
1
-
S
IDSS  
uA  
uA  
uA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
-
1
j
Drain-Source Leakage Current (T=70oC)  
-
-
10  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±30  
ID=600mA  
-
1.3  
0.3  
0.5  
21  
53  
100  
125  
38  
17  
12  
2
-
Qgs  
Qgd  
td(on)  
tr  
VDS=16V  
-
VGS=4.5V  
-
-
VDS=10V  
-
-
ID=600mA  
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=5V  
RD=16.7Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
-
60  
-
VDS=10V  
-
f=1.0MHz  
-
-
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
IS=300mA, VGS=0V  
Min. Typ. Max. Unit  
1.2  
VSD  
-
-
V
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test.  
3.Surface mounted on FR4 board, t ≦ 10 sec.  
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT  
DEVICE OR SYSTEM ARE NOT AUTHORIZED.  
2/4  
AP1332GEU  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
T A = 150 o  
C
5.0V  
4.5V  
3.5V  
5.0V  
4.5V  
3.5V  
T A =25 o C  
2.5V  
2.5V  
V G =2.0V  
V G =2.0V  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1000  
800  
600  
400  
200  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =0.6A  
I D = 0.4 A  
T
A =25 o C  
V
G =4.5V  
Ω
2
3
4
5
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.0  
1.5  
1.0  
0.5  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T j =150 o C  
T j =25 o C  
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP1332GEU  
f=1.0MHz  
12  
100  
I D =0.6A  
10  
V
V
V
DS =10V  
8
6
4
2
0
DS =12V  
DS =16V  
C iss  
C oss  
C rss  
10  
1
3
5
7
9
11  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
10  
1
Duty factor=0.5  
100us  
0.2  
1
0.1  
0.05  
0.1  
1ms  
0.02  
0.01  
PDM  
0.1  
t
Single Pulse  
10ms  
T
T A =25 o C  
100ms  
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Single Pulse  
DC  
0.01  
0.01  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
td(on)  
td(off)tf  
tr  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4/4  
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : SOT-323  
D
Millimeters  
MIN NOM MAX  
0.80 0.90 1.00  
0.00 0.05 0.10  
0.15  
D1  
SYMBOLS  
A
A1  
A2  
D1  
e
E1  
E
0.25 0.33 0.40  
0.65  
D
1.80 2.00 2.20  
1.80 2.10 2.40  
1.15 1.25 1.35  
E
E1  
e
e
1.All Dimension Are In Millimeters.  
A
2.Dimension Does Not Include Mold Protrusions.  
A2  
A1  
Part Marking Information & Packing : SOT-323  
Part Number  
2XX  
Date Code  

相关型号：

AP133

 300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
DIODES

AP133-SN

 300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
DIODES

AP133-SN-W

 300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
DIODES

AP133-SNG-7

 300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
DIODES

AP133-WG-7

 300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
DIODES

AP1332EU

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP1332GEU

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP1332GEU-HF

 Lower Gate Charge, Simple Gate Drive
A-POWER

AP1332GEV-HF

 Lower Gate Charge, Gate Pateded Diode
A-POWER

AP1333GU

 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP1333GU-HF

 TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
A-POWER

AP1333GU_11

 Simple Gate Drive, Small Package Outline
A-POWER
©2020 ICPDF网 联系我们和版权申明