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AP18T10GH-HF_14

更新时间：2024-09-18 22:13:38

品牌：A-POWER

描述：Simple Drive Requirement

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AP18T10GH-HF_14 概述

Simple Drive Requirement

AP18T10GH-HF_14 数据手册

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AP18T10GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

160mΩ

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ Halogen Free & RoHS Compliant Product

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

TO-252(H)

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP18T10GJ)

are available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

5.6

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

Total Power Dissipation³

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

4.5

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Rthj-a

62.5

110

Rthj-a

Maixmum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

201009102

AP18T10GH/J-HF

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

BV_DSS

R_DS(ON)

V_GS(th)

Parameter

Test Conditions

Min. Typ. Max. Units

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance²V_GS=10V, I_D=5A

V_GS=0V, I_D=250uA

100

160

mΩ

Gate Threshold Voltage

V_DS=V_GS, I_D=250uA

g_fs

Forward Transconductance

V_DS=10V, I_D=5A

5.6

I_DSS

Drain-Source Leakage Current

Drain-Source Leakage Current (T_j=125^oC) V_DS=80V ,V_GS=0V

V_DS=80V, V_GS=0V

250

I_GSS

Q_g

Gate-Source Leakage

Total Gate Charge²

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time²

Rise Time

V_GS=+20V, V_DS=0V

I_D=5A

+100

2.5

4.5

6.5

3.4

425

Q_gs

Q_gd

t_d(on)

t_r

V_DS=80V

V_GS=10V

V_DS=50V

I_D=5A

t_d(off)

t_f

Turn-off Delay Time

Fall Time

R_G=3.3Ω,V_GS=10V

R_D=10Ω

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_GS=0V

680

V_DS=25V

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Forward On Voltage²

Reverse Recovery Time²

Test Conditions

Min. Typ. Max. Units

V_SD

t_rr

I_S=5A, V_GS=0V

dI/dt=100A/µs

1.3

Q_rr

Reverse Recovery Charge

130

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in²copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP18T10GH/J-HF

T _C= 150 ^o

T _C= 25 ^o

10 V

9.0 V

8.0V

7.0V

7 .0 V

6.0 V

V _G= 5.0 V

5.0 V

V _G= 4 . 5 V

V _DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

280

240

200

160

120

2.4

2.0

1.6

1.2

0.8

0.4

I _D=5A

_C=25 ^o

I _D=5A

_G=10V

-50

100

150

T _j, Junction Temperature ( ^oC)

V _GSGate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

3.0

2.6

2.2

1.8

1.4

T _j=150 ^o

T _j=25 ^o

0.2

0.4

0.6

0.8

1.2

1.4

-50

100

150

T _j, Junction Temperature ( ^oC)

V _SD, Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

AP18T10GH/J-HF

f=1.0MHz

1000

_D= 5 A

C _iss

V _DS= 80 V

100

C _oss

C _rss

Q _G, Total Gate Charge (nC)

V _DS,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

100

Duty factor=0.5

0.2

0.1

100us

1ms

0.1

0.05

P_DM

0.02

10ms

0.01

T _c=25 ^o

Duty factor = t/T

Single Pulse

100ms

Peak T_j= P_DMx R_thjc+ T_C

Single Pulse

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

1000

V _DS, Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

V_G

V_DS

90%

Q_G

10V

Q_GD

Q_GS

10%

V_GS

t_r

t_d(on)

t_d(off)t_f

Charge

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

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