AP2422GY [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP2422GY |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP2422GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
BVDSS
RDS(ON)
ID
30V
40mΩ
4.8A
D2
D2
D1
D1
▼ Lower on-resistance
G2
S2
G1
S1
▼ Surface mount package
▼ RoHS compliant
2928-8
Description
D1
D2
S2
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
G1
G2
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±12
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
4.8
A
3.8
A
20
A
PD@TA=25℃
Total Power Dissipation
1.39
W
Linear Derating Factor
0.01
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
90
Unit
Rthj-a
Thermal Resistance Junction-ambient3
Max.
℃/W
Data and specifications subject to change without notice
200816053-1/4
AP2422GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
V/℃
mΩ
RDS(ON)
-
32
VGS=4.5V, ID=4A
VGS=2.5V, ID=2A
-
-
-
-
40
mΩ
mΩ
V
60
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=5V, ID=4A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±12V
0.5
-
-
1.2
Forward Transconductance
9
-
S
IDSS
Drain-Source Leakage Current (T=25oC)
uA
uA
nA
nC
nC
nC
ns
-
-
1
j
Drain-Source Leakage Current (T=70oC)
-
-
10
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
±100
ID=4A
-
3
5
Qgs
Qgd
td(on)
tr
VDS=25V
-
1.3
4
-
VGS=4.5V
-
-
VDS=15V
-
10
11
17
5
-
ns
ID=1A
-
-
ns
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=5V
RD=15Ω
-
-
-
ns
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
-
480
90
70
1.5
770
-
VDS=25V
-
f=1.0MHz
-
-
f=1.0MHz
-
2.3
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
Min. Typ. Max. Units
VSD
trr
IS=1.1A, VGS=0V
IS=4A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
18
10
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 155℃/W at steady state.
2/4
AP2422GY
20
16
12
8
20
16
12
8
5.0 V
4.5 V
3.5 V
A =25 o C
5.0 V
4.5 V
3.5 V
2.5 V
T
T A = 150 o
C
2.5 V
V G = 1.5 V
4
4
V G = 1.5 V
0
0
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
60
40
20
1.8
1.4
1.0
0.6
I D = 2 A
I D = 4 A
V
G = 4.5 V
T
A =25 ℃
Ω
Ω
Ω
Ω
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
1.2
0.6
0.0
4
3
2
1
0
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2422GY
f=1.0MHz
C iss
1000
100
10
15
I D = 4 A
12
V
V
V
DS = 15 V
DS = 20 V
DS = 25 V
9
C oss
C rss
6
3
0
0
5
10
15
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
100us
1ms
0.2
0.1
1
0.1
0.05
PDM
10ms
t
T
0.1
0.02
100ms
1s
T A =25 o C
Duty factor = t/T
0.01
Peak Tj = PDM x Rthja + Ta
Single Pulse
DC
Rthja=155oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
12
9
VG
V
DS =5V
QG
T j =25 o C
T j =150 o C
4.5V
QGS
QGD
6
3
Charge
Q
0
0
1
2
3
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
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