AP25G45EM [A-POWER]
N-CHANNEL INSULATED GATE; N沟道绝缘栅
| 型号： | AP25G45EM |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL INSULATED GATE |
| 文件： | 总3页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP25G45EM
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
VCE
ICP
450V
150A
▼ High Pick Current Capability
▼ 4.5V Gate Drive
▼ Strobe Flash Applications
C
C
C
C
C
E
G
G
E
E
SO-8
E
Absolute Maximum Ratings
Symbol
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Rating
Units
V
VCE
VGE
VGEP
ICP
450
± 6
V
Pulsed Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Storage Temperature Range
± 8
V
150
A
PD@TC=25℃1
2.5
W
℃
℃
TSTG
TJ
-55 to 150
-55 to 150
Operating Junction Temperature Range
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Gate-Emitter Leakage Current
Collector-Emitter Leakage Current (Tj=25℃)
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Test Conditions
Min. Typ. Max. Units
VGE=± 6V, VCE=0V
IGES
-
-
-
10
uA
uA
V
VCE=450V, VGE=0V
VGE=4.5V, ICP=150A (Pulsed)
VCE=VGE, IC=250uA
IC=50A
ICES
VCE(sat)
VGE(th)
Qg
-
10
-
6
8
0.35
-
1.2
V
nC
nC
nC
ns
-
-
-
-
-
-
-
-
-
-
-
64.5
7
-
-
VCE=360V
Qge
Qgc
td(on)
tr
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
VGE=5V
30
-
VCC=225V
11.5
24.5
150
3.3
2227
200
79
-
IC=50A
ns
Rise Time
-
RG=25Ω
ns
td(off)
tf
Turn-off Delay Time
-
VGE=5V
µs
Fall Time
-
VGE=0V
pF
pF
pF
℃/W
Cies
Coes
Cres
Input Capacitance
-
VCE=25V
Output Capacitance
-
Reverse Transfer Capacitance
f=1.0MHz
-
1
RthJA
Thermal Resistance Junction-Ambient
-
50
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
200507032
AP25G45EM
180
140
120
100
80
5.0V
4.5V
4.0V
5.0V
4.5V
160
T A =150 o
C
T A =25 o C
4.0V
140
120
100
80
3.0V
3.0V
60
60
2.0V
40
2.0V
40
20
20
VG=1.0V
VG=1.0V
0
0
0
2
4
6
8
10
12
0
2
4
6
8
10
V CE , Collector-Emitter Voltage (V)
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
120
80
10
V GE =4.5V
I C =130A
V CE =4.5V
8
6
25 ℃
70 ℃
125 ℃
T A =150 ℃
I C =100A
4
I
C =50A
40
2
0
0
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
Junction Temperature ( o C)
V GE , Cate-Emitter Voltage (V)
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
200
160
120
80
1.5
1.2
0.9
0.6
0.3
0
40
0
-50
0
50
100
150
0
1
2
3
4
5
6
7
Junction Temperature ( o C )
V GE , Gate-to-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
Fig 6. Minimum Gate Drive Area
AP25G45EM
f=1.0MHz
12
11
10
9
10000
1000
100
I CP =50A
V
CC =360V
Cies
8
7
6
5
Coes
Cres
4
3
2
1
0
10
0
30
60
90
120
150
1
5
9
13
17
21
25
29
Q G , Gate Charge (nC)
VCE, Collector-Emitter Voltage (V)
Fig 7. Typical Capacitance Characterisitics
Fig 8. Gate Charge Waveform
VCE
RC
90%
TO THE
OSCILLOSCOPE
C V
CE
G
R
G
225 V
10%
VGE
E
+
5V
V
-
GE
td(on)
td(off) tf
tr
Fig 9. Switching Time Test Circuit
Fig 10. Switching Time Waveform
VCE
Flasher
RG
Vtrig
CM
TO THE
OSCILLOSCOPE
C
+
_
G
VCM
300V
VGE
IGBT
E
+
mA
1~3
VG
-
I
I
G
C
ICP = 150A
VG =5V
VCM = 300V
CM =100uF
Fig 11. Gate Charge Test Circuit
Fig 12. Application Test Circuit
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