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AP30T10GK-HF

更新时间：2024-09-18 12:54:08
品牌：A-POWER
描述：N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP30T10GK-HF 概述

N-CHANNEL ENHANCEMENT MODE POWER MOSFET N沟道增强型功率MOSFET 功率场效应晶体管

AP30T10GK-HF 规格参数

是否Rohs认证： 符合生命周期：Contact Manufacturer
包装说明：SMALL OUTLINE, R-PDSO-G4针数：4
Reach Compliance Code：compliantHTS代码：8541.29.00.75
风险等级：5.66Is Samacsys：N
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏源导通电阻：0.055 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G4
元件数量：1端子数量：4
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：20 A表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AP30T10GK-HF 数据手册

通过下载AP30T10GK-HF数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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AP30T10GK-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
55mΩ  
4.8A  
▼ Lower Gate Charge  
▼ Fast Switching Characteristic  
G
▼ Halogen Free & RoHS Compliant Product  
Description  
D
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching,ruggedized device design, low on-  
resistance and cost-effectiveness.  
S
D
The SOT-223 package is designed for suface mount application, larger  
heatsink than SO-8 and SOT package.  
SOT-223  
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
100  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25℃  
ID@TA=70℃  
IDM  
4.8  
A
3.9  
A
20  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.78  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
45  
Units  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
1
201112131  
AP30T10GK-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=4A  
VGS=0V, ID=250uA  
100  
-
-
-
-
V
-
-
55  
90  
mΩ  
mΩ  
V
GS=5V, ID=2A  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge  
VDS=VGS, ID=250uA  
VDS=10V, ID=4A  
VDS=80V, VGS=0V  
VGS= +20V, VDS=0V  
ID=4A  
0.9  
-
6.5  
-
2.5  
-
V
gfs  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
25  
-
+100  
Qg  
11.5 18.4  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
VDS=50V  
3
-
-
-
-
-
-
VGS=4.5V  
7
VDS=50V  
6.5  
6.5  
23  
11  
ID=1A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
VGS=10V  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
850 1360  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
115  
80  
-
-
f=1.0MHz  
f=1.0MHz  
1.4  
2.8  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
IS=2A, VGS=0V  
Min. Typ. Max. Units  
V
VSD  
trr  
-
-
-
-
1.3  
Reverse Recovery Time  
Reverse Recovery Charge  
IS=4A, VGS=0V,  
dI/dt=100A/µs  
37  
61  
-
-
ns  
nC  
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP30T10GK-HF  
50  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
T A = 150 o  
C
T A = 25 o  
C
10V  
7.0V  
6.0V  
5.0V  
10V  
7.0V  
6.0V  
5.0V  
V
G = 4.0V  
V G = 4.0V  
0
2
4
6
8
10  
0
2
4
6
8
10  
12  
14  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
80  
70  
60  
50  
40  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
I D =4A  
I D =2A  
T
A =25 o C  
V
G =10V  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
2
I D =250uA  
1.5  
T j =150 o C  
T j =25 o C  
1
0.5  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP30T10GK-HF  
f=1.0MHz  
1600  
1200  
800  
400  
0
10  
I
D = 4 A  
V DS = 50 V  
8
6
4
2
0
C iss  
C oss  
C rss  
0
4
8
12  
16  
20  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS ,Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
0.1  
Operation in this area  
10  
limited by R  
DS(ON)  
100us  
1ms  
0.1  
0.05  
1
0.02  
10ms  
100ms  
0.01  
PDM  
0.01  
t
T
0.1  
Single Pulse  
Duty factor = t/T  
1s  
T A =25 o C  
Peak Tj = PDM x Rthja + Ta  
Rthja = 120℃/W  
Single Pulse  
DC  
0.001  
0.0001  
0.01  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.01  
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
30  
20  
10  
0
6
5
4
3
2
1
0
V
DS =5V  
T j =150 o C  
T j =25 o C  
T j =-40 o  
C
25  
50  
75  
100  
125  
150  
0
2
4
6
8
T A , Ambient Temperature ( o C )  
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Maximum Continuous Drain Current  
v.s. Ambient Temperature  
4

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