AP3801GM [A-POWER]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
| 型号： | AP3801GM |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP3801GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-30V
70mΩ
-5A
D
D
D
▼ Low On-resistance
D
▼ Fast Switching Characteristic
▼ RoHS Compliant
G
S
S
SO-8
S
Description
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
± 20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-5
A
-4
A
-20
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
50
Unit
Rthj-a
Thermal Resistance Junction-ambient3
Max.
℃/W
Data and specifications subject to change without notice
200511051-1/4
AP3801GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-30
-
-0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
-
-
V/℃
mΩ
RDS(ON)
70
-
-1
-
-
-
105 mΩ
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS=± 20V
-3
V
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
7
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-
-1
j
Drain-Source Leakage Current (T=70oC)
-
-
-25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
±100
ID=-5A
-
6
10
Qgs
Qgd
td(on)
tr
VDS=-25V
-
1.3
3
-
VGS=-4.5V
-
-
VDS=-15V
-
7
-
ID=-1A
-
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=15Ω
-
20
4
-
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
-
410
95
65
6.5
660
-
VDS=-25V
-
f=1.0MHz
-
-
f=1.0MHz
-
10
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-1.9A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.3
V
Reverse Recovery Time
Reverse Recovery Charge
19
12
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2/4
AP3801GM
30
20
10
0
30
20
10
0
T A =25 o C
-10V
-7.0V
T A =150 o C
-10V
-7.0V
-5.0V
-4.5V
-5.0V
-4.5V
V
G =-3.0V
V G =-3.0V
0
2
4
6
8
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1.4
1.0
0.6
225
175
125
75
I D =-5A
I D =-3A
V
G = -10V
T
A =25 o C
Ω
25
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
4
3
2
1
0
1.6
1.2
0.8
0.4
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP3801GM
f=1.0MH
C iss
1000
100
10
16
I D = -5A
12
V
DS = -25V
C oss
C rss
8
4
0
0
4
8
12
16
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
100us
10
0.1
0.1
1ms
10ms
100ms
1s
0.05
1
0.02
0.01
PDM
t
0.01
T
Single Pulse
0.1
T A =25 o C
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja = 125℃/W
DC
0.01
0.001
0.0001
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
15
10
5
VG
V
DS =-5V
QG
T j =25 o C
T j =150 o C
-4.5V
QGD
QGS
Q
Charge
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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