AP3R604GH-HF
更新时间:2024-09-18 12:54:08
品牌:A-POWER
描述:Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic
AP3R604GH-HF 概述
Low On-resistance, Simple Drive Requirement, Fast Switching Characteristic 低导通电阻,简单的驱动要求,快速开关特性 功率场效应晶体管
AP3R604GH-HF 规格参数
生命周期: | Contact Manufacturer | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.68 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.0037 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 300 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
AP3R604GH-HF 数据手册
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PDF下载AP3R604GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
40V
3.7mΩ
75A
D
S
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
Description
Advanced Power MOSFETs from APEC provide the designer with the
G
D
S
best combination of fast switching, ruggedized device design, low on-
TO-252(H)
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current (Chip)
Continuous Drain Current4
Continuous Drain Current4
Pulsed Drain Current1
125
A
75
A
75
A
300
A
PD@TC=25℃
TSTG
Total Power Dissipation
104
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
1.2
Rthj-a
62.5
Data & specifications subject to change without notice
1
201206131
AP3R604GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
3.7
5.6
mΩ
mΩ
V
GS=4.5V, ID=30A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=40V, VGS=0V
VGS=+20V, VDS=0V
ID=40A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
+100
Qg
28
5.3
16
10
80
36
105
45
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=32V
VGS=4.5V
-
VDS=20V
-
ID=40A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
VGS=10V
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
2750 4400
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
600
175
1.5
-
-
f=1.0MHz
f=1.0MHz
2.3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
IS=40A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
45
58
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Package limitation current is 75A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3R604GH-HF
300
250
200
150
100
50
160
120
80
T C =25 o C
T C =150 o C
10V
7.0V
6.0V
5.0V
10V
7.0V
6.0V
5.0V
V G = 4.0 V
V
G =4.0V
40
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
4.4
2.0
1.6
1.2
0.8
0.4
I D =30A
I D =40A
C =25 o C
V
G =10V
T
4
Ω
3.6
3.2
2.8
2.4
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
40
30
20
10
0
T j =25 o C
T j =150 o C
0
0.4
0.8
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3R604GH-HF
f=1.0MHz
10
4000
3000
2000
1000
0
I D =40A
8
V DS =20V
C iss
V
DS =24V
V
DS =32V
6
4
2
0
C oss
C rss
0
10
20
30
40
50
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
Operation in this
area limited by
100us
RDS(ON)
100
10
1
0.2
0.1
0.1
0.05
1ms
PDM
t
0.02
0.01
T
10ms
100ms
DC
Duty Factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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