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AP4578GH

更新时间：2024-09-18 09:39:02
品牌：A-POWER
描述：N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

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AP4578GH 概述

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N和P沟道增强型功率MOSFET 功率场效应晶体管

AP4578GH 规格参数

生命周期：Contact Manufacturer零件包装代码：TO-252
包装说明：SMALL OUTLINE, R-PSSO-G4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.71外壳连接：DRAIN
配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.072 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252
JESD-30 代码：R-PSSO-G4元件数量：2
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AP4578GH 数据手册

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AP4578GH  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
▼ Simple Drive Requirement  
N-CH BVDSS  
60V  
72mΩ  
9A  
D1/D2  
▼ Good Thermal Performance  
▼ Fast Switching Performance  
RDS(ON)  
ID  
P-CH BVDSS  
RDS(ON)  
S1  
-60V  
G1  
S2  
G2  
125mΩ  
-6A  
TO-252-4L  
Description  
ID  
S1  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D1  
D2  
S2  
G2  
G1  
S1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
VDS  
VGS  
Drain-Source Voltage  
60  
±25  
9
-60  
±25  
-6  
V
V
Gate-Source Voltage  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
6
-4  
A
30  
-30  
A
PD@TC=25℃  
Total Power Dissipation  
Linear Derating Factor  
8.9  
0.07  
W
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
14  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case3  
Thermal Resistance Junction-ambient3  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
200218051  
AP4578GH  
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
60  
-
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=5A  
VGS=4.5V, ID=3A  
0.05  
V/℃  
mΩ  
mΩ  
V
RDS(ON)  
-
-
-
72  
90  
3
-
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=5A  
1
-
-
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=150oC)  
Gate-Source Leakage  
Total Gate Charge2  
8
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
VDS=60V, VGS=0V  
VDS=48V, VGS=0V  
VGS=±25V  
ID=5A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10  
25  
IGSS  
Qg  
-
±100  
9
2
5
7
5
21  
5
15  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=48V  
VGS=4.5V  
-
VDS=30V  
-
ID=1A  
-
td(off)  
tf  
Turn-off Delay Time  
RG=3.3Ω,VGS=10V  
RD=30Ω  
-
Fall Time  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
750 1200  
Output Capacitance  
VDS=25V  
80  
60  
-
-
Reverse Transfer Capacitance  
Gate Resistance  
f=1.0MHz  
f=1.0MHz  
1.5  
2.3  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=5A, VGS=0V  
IS=5A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
Reverse Recovery Time  
Reverse Recovery Charge  
33  
55  
-
-
ns  
nC  
Qrr  
AP4578GH  
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
BVDSS  
Drain-Source Breakdown Voltage  
VGS=0V, ID=-250uA  
-60  
-
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-3A  
VGS=-4.5V, ID=-2A  
-0.04  
V/℃  
RDS(ON)  
-
-
-
125 mΩ  
150 mΩ  
-
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=-250uA  
VDS=-10V, ID=-3A  
VDS=-60V, VGS=0V  
VDS=-48V, VGS=0V  
VGS=±25V  
-1  
-
-
-3  
V
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
5
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
-10  
j
Drain-Source Leakage Current (T=150oC)  
-
-
-25  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±100  
ID=-3A  
-
13  
3
6
11  
5
35  
7
21  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=-48V  
-
VGS=-4.5V  
-
-
VDS=-30V  
-
-
ID=-1A  
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=-10V  
RD=30Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
1030 1650  
VDS=-25V  
-
90  
75  
5
-
-
f=1.0MHz  
-
f=1.0MHz  
-
7.5  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
IS=-3A, VGS=0V  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
-1.2  
V
Reverse Recovery Time  
Reverse Recovery Charge  
IS=-3A, VGS=0V  
42  
82  
-
-
ns  
nC  
Qrr  
dI/dt=-100A/µs  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
3.N-CH , P-CH are same .  
AP4578GH  
N-Channel  
25  
20  
15  
10  
5
25  
T C = 25 o C  
10V  
10V  
T C =150 o  
C
7.0V  
5.0V  
4.5V  
7.0V  
5.0V  
4.5V  
20  
15  
10  
5
V
G =3.0V  
V
G =3.0V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS , Drain-to-Source Voltage (V)  
VDS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
95  
85  
75  
65  
55  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = 3 A  
I D =5A  
T
C =25 o C  
VG =10V  
Ω
Ω
Ω
Ω
-50  
0
50  
100  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
VGS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
4
3
2
1
0
2
1.5  
1
T j =150 o  
C
T j =25 o C  
0.5  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j ,Junction Temperature ( o C)  
VSD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
AP4578GH  
N-Channel  
f=1.0MHz  
C iss  
1000  
100  
10  
12  
I D = 5 A  
10  
8
V
DS = 48 V  
6
C oss  
C rss  
4
2
0
0
4
8
12  
16  
20  
1
5
9
13  
17  
21  
25  
29  
VDS , Drain-to-Source Voltage (V)  
QG , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100  
10  
1
Duty factor=0.5  
100us  
1ms  
0.2  
0.1  
0.1  
0.05  
PDM  
0.02  
t
T
0.01  
T C =25 o C  
10ms  
Duty factor = t/T  
Single Pulse  
100ms  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
DC  
0.1  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
25  
20  
15  
10  
5
VG  
V
DS =5V  
T j =25 o C  
T j =150 o  
C
QG  
4.5V  
QGS  
QGD  
Charge  
Q
0
0
2
4
6
8
VGS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
AP4578GH  
P-Channel  
20  
20  
15  
10  
5
T C =150 o C  
-10V  
-7.0V  
-5.0V  
-4.5V  
T C = 25 o C  
-10V  
-7.0V  
-5.0V  
-4.5V  
15  
10  
V G = - 3.0V  
5
V G = - 3.0V  
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)  
-V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
135  
125  
115  
105  
95  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = -3 A  
I D = -2 A  
T C =25 o C  
V G = - 10V  
Ω
Ω
Ω
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
3
2
1
0
2
1.5  
T j =25 o C  
1
T j =150 o C  
0.5  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
-V SD , Source-to-Drain Voltage (V)  
T j , Junction Temperature ( o C)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
AP4578GH  
P-Channel  
f=1.0MHz  
12  
10000  
1000  
100  
I D =-3A  
DS =-48V  
10  
8
V
C iss  
6
4
C oss  
C rss  
2
0
10  
0.0  
5.0  
10.0  
15.0  
20.0  
25.0  
30.0  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
-V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100.0  
10.0  
1.0  
1
Duty factor=0.5  
100us  
0.2  
0.1  
0.1  
0.05  
PDM  
t
0.02  
1ms  
T
T C =25 o C  
0.01  
Duty factor = t/T  
10ms  
100ms  
DC  
Single Pulse  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
0.1  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
-V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
20  
15  
10  
5
VG  
V
DS =-5V  
T j =25 o C  
QG  
T j =150 o  
C
-4.5V  
QGS  
QGD  
Q
Charge  
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  

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