AP4936GM [A-POWER]
Low Gate Charge, Simple Drive Requirement; 低门电荷，简单的驱动要求
| 型号： | AP4936GM |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Low Gate Charge, Simple Drive Requirement |
| 文件： | 总6页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP4936GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
25V
37mΩ
5.8A
D2
D2
D1
▼ Simple Drive Requirement
▼ Fast Switching
D1
G2
S2
▼ RoHS Compliant
G1
SO-8
S1
Description
D2
S2
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
G1
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
25
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
± 20
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
5.8
A
4.6
30
A
A
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
2
W
0.016
-55 to 150
-55 to 150
W/℃
℃
℃
TSTG
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-amb
Thermal Resistance Junction-ambient3
Max.
℃/W
Data and specifications subject to change without notice
200301061-1/6
AP4936GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
25
-
-
0.03
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=3.5A
V/℃
mΩ
RDS(ON)
-
37
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
3
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
VDS=VGS, ID=250uA
VDS=10V, ID=5A
6.5
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
VDS=25V, VGS=0V
VDS=20V ,VGS=0V
1
-
25
IGSS
Qg
V =
GS
-
± 20V
±100
ID=5A
6.9
1.2
4.5
6
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
VDS=16V
VGS=5V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VDS=16V
ID=5A
Rise Time
17.5
14.5
5.5
218
155
63
td(off)
tf
Turn-off Delay Time
RG=3.3Ω,VGS=10V
RD=3.2Ω
VGS=0V
Fall Time
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
V
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.2V
-
-
-
-
1.67
1.2
VSD
Forward On Voltage2
Tj=25℃, IS=1.7A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
2/6
AP4936GM
30
25
20
15
10
5
25
20
15
10
5
T C =25 o C
T C =150 o C
10V
8.0V
6.0V
10V
8.0V
6.0V
5.0V
5.0V
V GS =4.0V
V
GS =4.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1.6
1.4
1.2
1
60
I D =5A
I D =5.0A
55
50
45
40
35
30
25
20
V
GS =10V
T C =25 ℃
Ω
Ω
Ω
Ω
0.8
0.6
3
4
5
6
7
8
9
10
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3/6
AP4936GM
7
6
5
4
3
2
1
0
2.5
2
1.5
1
0.5
0
0
50
100
150
25
50
75
100
125
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
Duty Factor = 0.5
0.2
0.1
10
0.1
1ms
0.05
10ms
1
0.02
0.01
PDM
100ms
1s
t
0.01
T
Single Pulse
0.1
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
10s
DC
T C =25 o C
Single Pulse
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t , Pulse Width (S)
V DS (V)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4/6
AP4936GM
f=1.0MHz
16
14
12
10
8
1000
100
10
I D =5A
VDS =16V
Ciss
Coss
Crss
6
4
2
0
0
2
4
6
8
10
12
14
16
18
1
5
9
13
17
21
25
29
VDS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
2
1
0
100
10
Tj=150 o C
Tj=25 o C
1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5/6
AP4936GM
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.64 x RATED VDS
RG
G
10%
VGS
+
-
10 v
VGS
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
5V
VDS
QG
TO THE
OSCILLOSCOPE
D
S
0.64 x RATED VDS
QGD
QGS
G
VGS
+
1~ 3 mA
IG
-
I
D
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
6/6
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