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AP62T02GJ [A-POWER]

Simple Drive Requirement, Low On-resistance; 简单的驱动要求，低导通电阻
AP62T02GJ
型号： AP62T02GJ
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, Low On-resistance
简单的驱动要求，低导通电阻

驱动
文件： 总4页 (文件大小：75K)
中文：  中文翻译
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AP62T02GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
12mΩ  
48A  
▼ Low On-resistance  
▼ Fast Switching Characteristic  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-252(H)  
TO-251(J)  
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP62T02GJ) are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
± 20  
48  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
30  
A
120  
A
PD@TC=25℃  
Total Power Dissipation  
36.8  
0.3  
W
Linear Derating Factor  
Single Pulse Avalanche Energy3  
W/℃  
mJ  
A
EAS  
IAR  
29  
Avalanche Current  
24  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
℃
℃
Thermal Data  
Symbol  
Parameter  
Value  
3
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
200504062-1/4  
AP62T02GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
0.02  
10  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=10V, ID=30A  
-
12  
V
GS=4.5V, ID=15A  
-
0.5  
-
13  
-
16  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
VDS=30V, VGS=0V  
VDS=24V ,VGS=0V  
VGS= ±20V  
ID=30A  
1.5  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=175oC)  
34  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
1
-
-
250  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±100  
-
13  
2.6  
8
20  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
-
VGS=4.5V  
-
-
VDS=15V  
-
7.5  
90  
22  
6.5  
-
ID=30A  
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.5Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
950 1420  
VDS=25V  
-
220  
160  
1.1  
-
-
f=1.0MHz  
-
f=1.0MHz  
-
1.7  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=30A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
ns  
nC  
30  
25  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.  
2/4  
AP62T02GH/J  
115  
92  
69  
46  
23  
0
120  
90  
60  
30  
0
T C =150 o  
C
T C =25 o  
C
10V  
7.0V  
10V  
7.0V  
5.0V  
4.5V  
5.0V  
4.5V  
V
G =3.0V  
V
G =3.0V  
0
2
4
6
0.0  
2.0  
4.0  
6.0  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
15  
14  
13  
12  
11  
10  
2
I D =15A  
I D =30A  
V
G =10V  
T
C =25 ℃  
1.6  
1.2  
0.8  
0.4  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.0  
30  
20  
10  
0
1.5  
1.0  
0.5  
0.0  
T j =150 o  
C
T j =25 o  
C
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C )  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP62T02GH/J  
f=1.0MHz  
12  
10000  
1000  
100  
I D = 30 A  
V DS = 15 V  
V DS = 20 V  
9
6
3
0
V
DS =2 4 V  
C iss  
C oss  
C rss  
25  
0
5
10  
15  
20  
25  
1
5
9
13  
17  
21  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
0.1  
100us  
0.05  
PDM  
0.02  
t
1ms  
10ms  
100ms  
1s  
T
0.01  
T c =25 o  
C
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
DC  
1
0.01  
0.00001  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig10. Effective Transient Thermal Impedance  
100  
80  
60  
40  
20  
0
VG  
V DS =5V  
QG  
T j =25 o  
C
T j =150 o  
C
4.5V  
QGS  
QGD  
Q
Charge  
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4/4  

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