首页 |元器件品牌

AP6900GSM [A-POWER]

Simple Drive Requirement, DC-DC Converter Suitable; 简单的驱动要求， DC-DC转换器适用
AP6900GSM
型号： AP6900GSM
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, DC-DC Converter Suitable
简单的驱动要求， DC-DC转换器适用

转换器 驱动 DC-DC转换器
文件： 总9页 (文件大小：140K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP6900GSM  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL MOSFET WITH  
SCHOTTKY DIODE  
S1/D2  
S1/D2  
S1/D2  
G1  
▼ Simple Drive Requirement  
CH-1 BVDSS  
RDS(ON)  
30V  
▼ DC-DC Converter Suitable  
▼ Fast Switching Performance  
30mΩ  
ID  
CH-2 BVDSS  
RDS(ON)  
5.7A  
30V  
22mΩ  
9.8A  
S2/A  
G2  
D1  
D1  
SO-8  
Description  
ID  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D1  
G1  
The SO-8 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
N-Channel 1  
MOSFET  
S1/D2  
Schottky Diode  
G2  
N-Channel 2  
MOSFET  
S2/A  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Channel-1  
Units  
Channel-2  
30  
VDS  
VGS  
Drain-Source Voltage  
30  
±20  
5.7  
4.6  
20  
V
V
Gate-Source Voltage  
±20  
9.8  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
7.8  
A
30  
A
PD@TA=25℃  
Total Power Dissipation  
1.4  
0.01  
2.2  
W
W/℃  
℃
℃
Linear Derating Factor  
0.02  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
Typ.  
Max.  
90  
Rthj-a (CH-1)  
Rthj-a (CH-2)  
Thermal Resistance Junction-ambient3  
Thermal Resistance Junction-ambient3  
70  
42  
℃/W  
℃/W  
55  
Data and specifications subject to change without notice  
201121063-1/9  
AP6900GSM  
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.01  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=10V, ID=5A  
-
30  
V
GS=4.5V, ID=3A  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
37  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=70oC)  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=250uA  
VDS=10V, ID=5A  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
VGS=±20V  
3
5.7  
-
-
S
IDSS  
1
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
25  
IGSS  
-
±100  
Qg  
ID=6A  
9
15  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=24V  
2
VGS=4.5V  
6
-
VDS=15V  
8
-
ID=1A  
7
-
td(off)  
tf  
Turn-off Delay Time  
RG=3.3Ω,VGS=10V  
RD=15Ω  
19  
6
-
Fall Time  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
610 970  
Output Capacitance  
VDS=25V  
160  
120  
1.6  
-
-
-
Reverse Transfer Capacitance  
Gate Resistance  
f=1.0MHz  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=1.2A, VGS=0V  
IS=6A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
18  
11  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
2/9  
AP6900GSM  
CH-2 Electrical Characteristics@T=25oC(unless otherwise specified)  
j
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.1  
-
-
V
V/℃  
mΩ  
mΩ  
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=9A  
-
RDS(ON)  
-
22  
VGS=4.5V, ID=7A  
-
-
29  
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=9A  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
VGS=±20V  
1
-
-
3
Forward Transconductance  
Drain-Source Leakage Current ( =25oC)  
11  
-
-
S
IDSS  
uA  
mA  
nA  
nC  
nC  
nC  
ns  
-
100  
Tj  
Drain-Source Leakage Current ( Tj=70oC)  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
1
IGSS  
-
-
±100  
Qg  
ID=7A  
-
25  
4
40  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
-
VGS=10V  
-
7
-
VDS=20V  
-
10  
6
-
ns  
ID=1A  
-
-
ns  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=5.7Ω,VGS=10V  
RD=20Ω  
-
26  
12  
-
ns  
-
-
pF  
pF  
pF  
Ω
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
-
1170 1860  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
-
205  
142  
1.7  
-
-
-
f=1.0MHz  
-
f=1.0MHz  
-
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
IS=2.6A, VGS=0V  
Is=7A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
21  
16  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.  
3/9  
AP6900GSM  
Schottky Specifications@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VF  
Forward Voltage Drop  
IF=1.0A  
-
-
-
-
0.47  
0.004  
0.5  
0.5  
0.2  
1
V
mA  
mA  
pF  
Irm  
Maximum Reverse Leakage Current Vr=30V  
Maximum Reverse Leakage Current Vr=30V,Tj=100℃  
Junction Capacitance Vr=10V  
CT  
66  
-
4/9  
AP6900GSM  
Channel-1  
40  
40  
30  
20  
10  
0
T A = 1 5 0 o C  
10V  
7.0V  
T A = 25 o C  
10V  
7.0V  
5.0V  
4.5V  
5.0V  
4.5V  
30  
20  
10  
0
VG =3.0V  
V
G =3.0V  
0
1
2
3
4
5
6
0
1
2
3
4
5
VDS , Drain-to-Source Voltage (V)  
VDS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
38  
34  
30  
26  
22  
18  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = 5 A  
I D = 3 A  
VG =10V  
T
A =25 o C  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
VGS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
7
6
5
4
3
2
1
0
1.6  
1.3  
1.0  
0.7  
0.4  
T j =150 o  
C
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j ,Junction Temperature ( o C)  
VSD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
5/9  
AP6900GSM  
Channel-1  
f=1.0MHz  
12  
1000  
100  
10  
C iss  
I D =6A  
10  
8
V
DS =24V  
C oss  
C rss  
6
4
2
0
1
5
9
13  
17  
21  
25  
29  
0
4
8
12  
16  
VDS , Drain-to-Source Voltage (V)  
QG , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
0.1  
10  
0.1  
1ms  
0.05  
0.02  
1
10ms  
0.01  
PDM  
t
Single Pulse  
0.01  
100ms  
1s  
T
0.1  
T A =25 o C  
Duty factor = t/T  
10s  
DC  
Peak Tj = PDM x Rthja + Ta  
Rthja =135℃/W  
Single Pulse  
0.001  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
VDS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
t
d(off)tf  
td(on)  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
6/9  
AP6900GSM  
Channel-2  
20  
20  
15  
10  
5
T A = 25 o  
C
10V  
T A =150 o C  
10V  
7.0V  
5.0V  
4.5V  
7.0V  
5.0V  
4.5V  
15  
10  
5
V G = 3.0V  
V G = 3.0V  
0
0
0
1
2
3
0
1
2
3
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
26  
24  
22  
20  
18  
16  
14  
12  
I D = 9 A  
I D = 7 A  
V
G =10V  
T
A =25 o C  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS ,Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
1
T j =150 o C  
T j =25 o C  
0.1  
0.01  
0
0.4  
0.8  
1.2  
-50  
0
50  
100  
150  
V SD , Source-to-Drain Voltage (V)  
T j , Junction Temperature ( o C)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
7/9  
AP6900GSM  
Channel-2  
f=1.0MHz  
14  
10000  
1000  
100  
I D = 7 A  
12  
10  
8
V
DS =24V  
C iss  
6
4
C oss  
C rss  
2
0
0
5
10  
15  
20  
25  
30  
35  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factore=0.5  
0.2  
10  
0.1  
0.1  
1ms  
0.05  
10ms  
1
0.02  
100ms  
0.01  
PDM  
t
0.01  
Single Pulse  
1s  
T
T A =25 o C  
0.1  
Duty factor = t/T  
Single Pulse  
DC  
Peak Tj = PDM x Rthja + Ta  
Rthja=135℃/W  
0.001  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
td(off)  
tr  
td(on)  
tf  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
8/9  
AP6900GSM  
Schottky  
10  
10  
1
30V  
0.1  
T j =150 o C  
T j =25 o C  
24V  
0.01  
0.001  
0.0001  
0
1
25  
50  
75  
100  
125  
0
0.3  
0.6  
0.9  
1.2  
1.5  
T j , Junction Temperature ( o C)  
V F , Forward Voltage Drop (V)  
Fig 1. Reverse Current vs Junction Temperature  
Fig 2. Typical Forward Characteristics  
f=1.0MHz  
1000  
100  
10  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Fig 3. Typical Junction Capacitance  
9/9  

相关型号：

AP6900GSM-HF

 TRANSISTOR POWER, FET, FET General Purpose Power
A-POWER

AP6901AGSM-HF

 Simple Drive Requirement, DC-DC Converter Suitable
A-POWER

AP6901GH-HF

 TRANSISTOR 72 A, 30 V, 0.0062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5, FET General Purpose Power
A-POWER

AP6901GSM-HF

 Simple Drive Requirement, DC-DC Converter Suitable
A-POWER

AP6902AGH-HF

 Simple Drive Requirement
A-POWER

AP6902GH-HF

 TRANSISTOR 42 A, 30 V, 0.001 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5, FET General Purpose Power
A-POWER

AP6903GH-HF

 Simple Drive Requirement, Two Independent Device
A-POWER

AP6904GH-HF

 Simple Drive Requirement, Two Independent Device
A-POWER

AP6905GH-HF

 TRANSISTOR 37 A, 40 V, 0.013 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SDPAK-5, FET General Purpose Power
A-POWER

AP6906GH-HF

 Simple Drive Requirement, Fast Switching Performance
A-POWER

AP6910GSM-HF

 Low On-resistance, Fast Switching Characteristic
A-POWER

AP6920GMT-HF

 Simple Drive Requirement, Easy for Synchronous Buck Converter Application
A-POWER
©2020 ICPDF网 联系我们和版权申明