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AP75N07GP-HF [A-POWER]

TRANSISTOR POWER, FET, FET General Purpose Power;
AP75N07GP-HF
型号： AP75N07GP-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR POWER, FET, FET General Purpose Power

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AP75N07GS/P-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
75V  
11mΩ  
80A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
▼ Halogen Free & RoHS Compliant  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
G
D
S
TO-220(P)  
The TO-263 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP75N07GP)  
are available for low-profile applications.  
G
D
TO-263(S)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
75  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V4  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
80  
A
70  
A
320  
A
PD@TC=25℃  
Total Power Dissipation  
300  
W
Linear Derating Factor  
2
W/℃  
mJ  
℃
EAS  
TSTG  
TJ  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
450  
-55 to 175  
-55 to 175  
℃
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)5  
0.5  
40  
62  
Rthj-a  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient  
Data & specifications subject to change without notice  
1
201212283  
AP75N07GS/P-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=1mA  
Min.  
Typ.  
Max.  
Units  
V
Drain-Source Breakdown Voltage  
75  
-
-
0.08  
-
-
-
ΔBVDSS/ΔTj  
RDS(ON)  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
Static Drain-Source On-Resistance2 VGS=10V, ID=40A  
-
11  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=15V, ID=40A  
VDS=75V, VGS=0V  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
120  
-
3
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (T=125oC) VDS=60V, VGS=0V  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
1
-
250  
j
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+20V, VDS=0V  
ID=40A  
-
+100  
Qg  
83  
130  
Qgs  
Qgd  
td(on)  
tr  
VDS=60V  
VGS=4.5V  
VDD=40V  
ID=30A  
10  
-
51  
-
15  
-
73  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=10Ω  
VGS=10V  
VGS=0V  
340  
200  
4270  
690  
320  
1.8  
-
-
6830  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
f=1.0MHz  
f=1.0MHz  
-
2.7  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
Min.  
Typ.  
-
Max.  
Units  
V
VSD  
trr  
Tj=25℃, IS=40A, VGS=0V  
IS=40A, VGS=0V  
-
-
-
1.5  
ns  
Reverse Recovery Time  
Reverse Recovery Charge  
90  
-
-
nC  
Qrr  
dI/dt=100A/µs  
235  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.  
4.Package limitation current is 80A .  
5.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP75N07GS/P-HF  
200  
160  
120  
80  
280  
240  
200  
160  
120  
80  
T C = 25 o  
C
T C = 175 o  
C
10V  
7.0 V  
5.0V  
4.5V  
10V  
7.0 V  
5.0V  
4.5V  
V
G =3.0V  
V G =3.0V  
40  
40  
0
0
0
3
6
9
12  
15  
0
3
6
9
12  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
20  
16  
12  
8
I D =20A  
I D =40A  
T
C =25 o C  
V
G =10V  
Ω
2
4
6
8
10  
25  
50  
75  
100  
125  
150  
175  
T j , Junction Temperature ( o C)  
V GS Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
20  
15  
10  
5
13  
12  
11  
10  
9
V GS =4.5V  
V GS =10V  
Ω
T j =175 o C  
T j =25 o C  
0
0
20  
40  
60  
80  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
V SD , Source-to-Drain Voltage (V)  
I D , Drain Current (A)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. On-Resistance vs.  
Drain Current  
3
AP75N07GS/P-HF  
f=1.0MHz  
14  
10000  
1000  
100  
12  
C iss  
I D = 4 0 A  
10  
V DS = 4 0 V  
V
DS = 48 V  
DS = 60 V  
8
6
4
2
0
V
C oss  
C rss  
0
40  
80  
120  
160  
200  
1
5
9
13  
17  
21  
25  
29  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
1
DUTY=0.5  
100  
10  
1
100us  
0.2  
0.1  
0.1  
1ms  
0.05  
PDM  
t
10ms  
100ms  
0.02  
T
0.01  
T C =25 o C  
Duty factor = t/T  
DC  
Peak Tj = PDM x Rthjc + TC  
SINGLE PULSE  
Single Pulse  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
120  
80  
40  
0
T j =175 o C  
VG  
T j =25 o C  
V
DS =5V  
QG  
4.5V  
QGD  
QGS  
Q
Charge  
0
2
4
6
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4

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