AP85T08GS,P-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET;型号: | AP85T08GS,P-HF |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总4页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP85T08GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
80V
13mΩ
75A
▼ Lower On-resistance
▼ Fast Switching Characteristic
G
▼ Halogen Free & RoHS Compliant Product
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
D
S
TO-263(S)
TO-220(P)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP85T08GP) are
available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
80
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
75
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
48
A
260
138
1.11
450
30
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
Single Pulse Avalanche Energy3
W/℃
mJ
A
EAS
IAR
Avalanche Current
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Value
0.9
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Maximum Thermal Resistance, Junction-ambient
Rthj-a
40
Rthj-a
62
Data and specifications subject to change without notice
1
201204033
AP85T08GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min.
80
-
Typ.
Max.
Units
V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=0V, ID=250uA
-
-
-
-
13
3
mΩ
V
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge
VDS=10V, ID=45A
VDS=80V, VGS=0V
VDS=64V ,VGS=0V
VGS=+20V, VDS=0V
ID=45A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
70
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
100
IGSS
-
+100
Qg
63
23
38
30
100
144
173
100
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
VDS=64V
-
-
-
-
-
-
VGS=4.5V
VDS=40V
Rise Time
ID=45A
td(off)
tf
Turn-off Delay Time
RG=10Ω
Fall Time
VGS=10V
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
6300 10080
Output Capacitance
VDS=25V
670
350
1.1
-
-
Reverse Transfer Capacitance
Gate Resistance
f=1.0MHz
f=1.0MHz
1.7
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
Min.
Typ.
-
Max.
Units
V
VSD
trr
IS=45A, VGS=0V
IS=20A, VGS=0V
dI/dt=100A/µs
-
-
-
1.3
ns
Reverse Recovery Time
Reverse Recovery Charge
47
86
-
-
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85T08GS/P-HF
120
90
60
30
0
250
200
150
100
50
T C = 150 o
C
10V
7.0 V
10V
7.0 V
5.0V
T C = 25 o
C
4.5V
5.0V
4.5V
V
G =3.0V
V G =3.0V
0
0
3
6
9
12
0
3
6
9
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
13
12
11
10
2.0
1.6
1.2
0.8
0.4
I D =20A
I D =45A
T
C =25 o C
V
G =10V
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85T08GS/P-HF
f=1.0MHz
10
10000
I
D = 45 A
C iss
8
6
4
2
0
V DS = 4 0 V
DS = 50 V
V
V
DS = 64 V
1000
C oss
C rss
100
1
5
9
13
17
21
25
29
0
20
40
60
80
100
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
0.2
100
10
1
0.1
100us
1ms
0.1
0.05
PDM
0.02
t
0.01
T
10ms
100ms
Duty factor = t/T
Single Pulse
T c =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
80
40
0
VG
V DS =5V
T j =25 o C
T j =150 o C
QG
4.5V
QGD
QGS
Q
Charge
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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TRANSISTOR 75 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
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