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AP92T03GI-HF

更新时间：2024-09-18 12:34:56
品牌：A-POWER
描述：Simple Drive Requirement, Low On-resistance

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AP92T03GI-HF 概述

Simple Drive Requirement, Low On-resistance 简单的驱动要求，低导通电阻 功率场效应晶体管

AP92T03GI-HF 规格参数

生命周期：Contact Manufacturer零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.67Is Samacsys：N
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：80 A
最大漏源导通电阻：0.004 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：300 A认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AP92T03GI-HF 数据手册

通过下载AP92T03GI-HF数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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AP92T03GI-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
4mΩ  
80A  
D
S
▼ Low On-resistance  
▼ Fast Switching Characteristic  
G
▼ RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for  
commercial-industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
80  
A
50  
A
300  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
31.3  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
.
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4.0  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
200906251  
AP92T03GI-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=40A  
VGS=0V, ID=250uA  
30  
-
-
-
-
-
4
V
mΩ  
mΩ  
V
GS=4.5V, ID=30A  
-
5.2  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=250uA  
VDS=10V, ID=40A  
VDS=24V, VGS=0V  
VGS= +20V, VDS=0V  
ID=40A  
0.5  
-
100  
-
2.5  
V
gfs  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
10  
-
+100  
Qg  
45  
6
72  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=20V  
VGS=4.5V  
26  
12  
63  
40  
7
-
VDS=15V  
-
ID=40A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=1Ω,VGS=10V  
RD=0.375Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
3500 5600  
Output Capacitance  
Reverse Transfer Capacitance  
VDS=25V  
930  
770  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=40A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
1.2  
V
ns  
nC  
39  
42  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP92T03GI-HF  
240  
200  
160  
120  
80  
300  
250  
200  
150  
100  
50  
T C =150 o C  
T C =25 o C  
10V  
10V  
7.0V  
5.0V  
4.5V  
7.0V  
5.0V  
4.5V  
V
G = 3.0V  
V G = 3.0V  
40  
0
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
5
1.8  
1.4  
1
I D = 30 A  
I D =40A  
T
C =25 ℃  
V
G =10V  
4.6  
4.2  
3.8  
3.4  
3
Ω
0.6  
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
6.0  
5.0  
4.0  
3.0  
2.0  
40  
30  
20  
10  
0
Ω
V GS =4.5V  
T j =150 o C  
T j =25 o C  
V
GS =10V  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
20  
40  
60  
80  
100  
I D , Drain Current (A)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. On-Resistance vs. Drain Current  
3
AP92T03GI-HF  
f=1.0MHz  
12  
5000  
4000  
3000  
2000  
1000  
0
I
D = 40 A  
10  
V DS = 12 V  
DS = 16 V  
DS = 20 V  
C iss  
8
V
V
6
4
C oss  
C rss  
2
0
1
5
9
13  
17  
21  
25  
29  
0
20  
40  
60  
80  
100  
120  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
100us  
0.01  
1ms.  
PDM  
t
0.01  
Single Pulse  
T
10ms  
100ms  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
T C =25 o  
Single Pulse  
C
DC  
V DS , Drain-to-Source Voltage (V)  
0.001  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
td(off)  
tr  
td(on)  
tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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