AP9408GJ [A-POWER]
Lower Gate Charge, Simple Drive Requirement; 更低的栅极电荷,简单的驱动要求型号: | AP9408GJ |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | Lower Gate Charge, Simple Drive Requirement |
文件: | 总4页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9408GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
30V
10mΩ
57A
▼ Simple Drive Requirement
G
▼ Fast Switching Characteristic
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9408GJ) are
available for low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
+20
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
57
A
41
A
228
A
PD@TC=25℃
Total Power Dissipation
53.6
W
W/℃
℃
℃
Linear Derating Factor
0.36
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
2.8
Rthj-a
62.5
110
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
1
200903055
AP9408GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
-
10
V
GS=4.5V, ID=20A
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
2.5
Forward Transconductance
Drain-Source Leakage Current
40
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1
Drain-Source Leakage Current (Tj=125oC) VDS=24V, VGS=0V
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+20V, VDS=0V
ID=10A
-
+100
13
2.2
7
21
-
Qgs
Qgd
td(on)
tr
VDS=24V
VGS=4.5V
VDS=15V
-
8
-
ID=1A
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=15Ω
24
9
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
860 1380
VDS=25V
210
150
2
-
-
f=1.0MHz
f=1.0MHz
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
23
17
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9408GH/J
120
100
80
60
40
20
0
100
80
60
40
20
0
T C =175 o C
T C =25 o C
10V
7.0 V
5.0V
4.5 V
10V
7 .0V
5.0V
4.5 V
V G =3.0V
V G = 3.0 V
0.0
1.0
2.0
3.0
4.0
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
14
12
10
8
I D =30A
I D =20A
T
C =25 o C
V
G =10V
Ω
6
-50
0
50
100
150
200
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
30
20
10
0
T j =175 o C
T j =25 o C
0
0.4
0.8
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9408GH/J
f=1.0MHz
16
10000
1000
100
I D =10A
DS =16V
12
V
V
DS =20V
DS =24V
V
8
C iss
4
C oss
C rss
0
1
5
9
13
17
21
25
29
0
10
20
30
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
1
Duty factor = 0.5
0.2
100us
0.1
0.1
1ms
0.05
10ms
100ms
DC
PDM
t
0.02
T
0.01
T C =25 o C
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V DS =5V
VG
100
80
60
40
20
0
T j =25 o C
T j =175 o C
QG
4.5V
QGD
QGS
Q
Charge
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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