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AP9474GM [A-POWER]

Low On-resistance, Single Drive Requirement; 低导通电阻，单驱动要求
AP9474GM
型号： AP9474GM
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Low On-resistance, Single Drive Requirement
低导通电阻，单驱动要求

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 驱动
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中文：  中文翻译
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AP9474GM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-resistance  
BVDSS  
RDS(ON)  
ID  
60V  
D
D
▼ Single Drive Requirement  
▼ Surface Mount Package  
D
10.5mΩ  
12.8A  
D
G
S
S
S
SO-8  
D
S
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G
The SO-8 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25℃  
ID@TA=70℃  
IDM  
12.8  
A
9.6  
A
50  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Maximum Thermal Resistance, Junction-ambient3  
Rthj-a  
℃/W  
Data and specifications subject to change without notice  
1
200902172  
AP9474GM  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=12A  
VGS=0V, ID=1mA  
60  
-
-
-
-
-
V
10.5 mΩ  
VGS=6V, ID=10A  
-
13  
mΩ  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=10A  
VDS=48V, VGS=0V  
VDS=48V ,VGS=0V  
VGS= +20V, VDS=0V  
ID=10A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25  
-
3
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (T=70oC)  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
1
-
25  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
+100  
51  
5.5  
17  
10  
8
84  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=48V  
VGS=10V  
-
VDS=30V  
-
ID=1A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=30Ω  
43  
20  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
2115 3400  
VDS=25V  
260  
200  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=1.5A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
1.3  
V
34  
43  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9474GM  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
T A =150 o C  
T A =25 o C  
10V  
7.0V  
5.0V  
4.5V  
10V  
7.0V  
5.0V  
4.5V  
V G =3.0V  
V
G =3.0V  
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
14  
12  
10  
8
2.0  
1.6  
1.2  
0.8  
0.4  
I D =10A  
I D =12A  
V G =10V  
T
A =25 o C  
Ω
6
-50  
0
50  
100  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
1.4  
1.2  
1
8
6
4
2
0
T j =150 o C  
T j =25 o C  
0.8  
0.6  
0.4  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j ,Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9474GM  
f=1.0MHz  
12  
10000  
1000  
100  
I D =10A  
V DS =48V  
10  
Ciss  
8
6
4
2
0
Coss  
Crss  
10  
1
5
9
13  
17  
21  
25  
29  
0
10  
20  
30  
40  
50  
60  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
DUTY=0.5  
10  
100us  
0.2  
1ms  
10ms  
100ms  
1s  
0.1  
PDM  
1
0.1  
t
T
0.05  
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
0.1  
0.02  
Rthja = 125℃/W  
T A =25 o C  
0.01  
DC  
Single Pulse  
Single Pulse  
0.01  
0.01  
0.001  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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