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AP9575GM-HF [A-POWER]

TRANSISTOR POWER, FET, FET General Purpose Power;
AP9575GM-HF
型号： AP9575GM-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR POWER, FET, FET General Purpose Power

晶体 栅极 开关 晶体管 功率场效应晶体管 脉冲 驱动 局域网
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AP9575AGI-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-60V  
64mΩ  
-17A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
G
▼ RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
The TO-220CFM isolation package is widely preferred for commercial-  
industrial through hole applications.  
G
D
TO-220CFM(I)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
-17  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
-11  
A
-60  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
31.3  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4.0  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
200908031  
AP9575AGI-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A  
VGS=0V, ID=-250uA  
-60  
-
-
-
-
-
V
mΩ  
V
64  
-3  
Gate Threshold Voltage  
VDS=VGS, ID=-250uA  
-1  
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=-10V, ID=-8A  
VDS=-60V, VGS=0V  
VGS= +20V, VDS=0V  
ID=-12A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
17  
-
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-25  
-
+100  
Qg  
35  
5
56  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=-48V  
VGS=-10V  
12  
12  
23  
45  
60  
-
VDS=-30V  
-
ID=-12A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=-10V  
RD=2.5Ω  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
1440 2300  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=-25V  
160  
120  
8.6  
-
-
-
f=1.0MHz  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=-12A, VGS=0V  
IS=-12A, VGS=0V,  
dI/dt=-100A/µs  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
-1.3  
V
ns  
nC  
43  
75  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9575AGI-HF  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
-10V  
-7.0V  
-6.0V  
-5.0V  
-10V  
- 7 .0V  
- 6 .0V  
- 5.0 V  
T C = 25 o C  
T C =150 o  
C
V
G = -4.0V  
V
G = - 4 .0 V  
0
2
4
6
8
0
2
4
6
8
10  
-V DS , Drain-to-Source Voltage (V)  
-V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
80  
70  
60  
50  
40  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
I D = - 12 A  
I D = -8 A  
V
G = -10V  
T
C =25 ℃  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
12  
10  
8
T j =150 o  
C
T j =25 o C  
6
4
2
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9575AGI-HF  
f=1.0MHz  
12  
2400  
2000  
1600  
1200  
800  
400  
0
V DS = - 48 V  
I
D = - 12 A  
10  
8
C iss  
6
4
2
C oss  
C rss  
0
1
5
9
13  
17  
21  
25  
29  
0
10  
20  
30  
40  
-V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
Operation in this area  
limited by R  
DS(ON)  
0.2  
0.1  
100us  
1ms  
10  
0.1  
0.05  
0.02  
0.01  
10ms  
100ms  
1s  
PDM  
Single Pulse  
1
0.01  
t
T
DC  
Duty factor = t/T  
T c =25 o C  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0
0.001  
0.00001  
0.1  
1
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
10  
-V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
-10V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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