AP95T11GI-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP95T11GI-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP95T11GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
110V
6.6mΩ
60A
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220CFM(I)
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
110
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
60
A
42
A
240
A
PD@TC=25℃
TSTG
Total Power Dissipation
60
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
2.5
65
Rthj-a
Data and specifications subject to change without notice
1
200911242
AP95T11GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=0V, ID=250uA
110
-
-
-
-
6.6
5
V
mΩ
V
-
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=10V, ID=30A
VDS=80V, VGS=0V
VGS= +20V, VDS=0V
ID=30A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
62
-
-
S
IDSS
IGSS
Qg
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
25
-
+100
100 160
Qgs
Qgd
td(on)
tr
VDS=80V
27
48
27
96
41
59
-
-
-
-
-
-
VGS=10V
VDS=50V
ID=30A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=1.6Ω
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
4600 7360
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
870
300
2
-
-
-
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=30A, VGS=0V
IS=30A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
V
VSD
trr
-
-
-
-
1.3
ns
85
-
-
nC
Qrr
Reverse Recovery Charge
270
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T11GI-HF
250
200
150
100
50
120
100
80
60
40
20
0
T C = 175 o
C
10V
T C = 25 o
C
10V
9.0V
8.0V
9.0V
8.0V
7.0V
V GS =6.0V
7.0V
V GS =6.0V
0
0
4
8
12
16
20
24
28
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.2
1.1
1
I D =30A
V
G =10V
0.9
0.8
-50
0
50
100
150
200
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
T
, Junction Temperature ( o C)
j
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
40
30
20
10
0
T j =175 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T11GI-HF
f=1.0MHz
12
6000
5000
4000
3000
2000
1000
0
I D = 30 A
V DS =80V
10
C iss
8
6
4
2
0
C oxx
C rss
1
5
9
13
17
21
25
29
0
20
40
60
80
100
120
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty factor=0.5
0.2
0.1
Operation in this
100us
1ms
area limited by
RDS(ON)
0.1
0.05
0.02
10ms
0.01
PDM
100ms
1s
0.01
t
T
1
Single Pulse
T c =25 o C
Duty factor = t/T
DC
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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