AP9915H [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9915H |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9915H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
BVDSS
RDS(ON)
ID
20V
50mΩ
20A
D
S
▼ Capable of 2.5V gate drive
▼ Low drive current
G
▼ Single Drive Requirement
Description
G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S
TO-252(H)
TO-251(J)
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
20
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
± 12
20
Continuous Drain Current, VGS @ 4.5V
ID@TC=25℃
ID@TC=125℃
IDM
A
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
16
41
A
A
PD@TC=25℃
Total Power Dissipation
26
W
Linear Derating Factor
0.2
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
4.8
Unit
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
Data and specifications subject to change without notice
200218032
AP9915H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
20
-
-
0.03
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
-
50
VGS=2.5V, ID=5.2A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
-
0.5
-
-
-
80
1.2
-
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
13
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
j
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
-
1
Drain-Source Leakage Current (T=125oC)
-
-
25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
V =
GS
-
-
± 12V
±100
ID=10A
-
7.5
0.9
4
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=20V
VGS=5V
-
-
VDS=10V
ID=10A
-
4.5
49.5
12
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=5V
RD=1Ω
-
-
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
-
195
126
50
VDS=20V
f=1.0MHz
-
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
A
A
V
IS
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
VD=VG=0V , VS=1.3V
-
-
-
-
-
-
20
41
ISM
VSD
Tj=25℃, IS=20A, VGS=0V
1.3
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9915H/J
40
30
20
10
0
50
40
30
20
10
0
T C =25 o C
T C =150 o C
4.5V
3.5V
4.5V
3.5V
2.5V
2.5V
V
GS =1.5V
V
GS =1.5V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
50
40
30
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I D = 6 A
I
D =6A
T C =25 o C
V GS =4.5V
Ω
Ω
Ω
Ω
-50
0
50
100
150
1
2
3
4
5
6
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP9915H/J
25
20
15
10
5
60
50
40
30
20
10
0
0
0
50
100
150
25
50
75
100
125
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
1000
100
10
Duty Factor = 0.5
0.2
10us
100us
1ms
0.1
0.1
0.05
10ms
PDM
0.02
Single Pulse
t
100ms
0.01
T
1
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
T c =25 o C
Single Pulse
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
t , Pulse Width (s)
V DS (V)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9915H/J
f=1.0MHz
16
14
12
10
8
1000
100
10
I D =20A
V
DS =12V
Ciss
VDS =16V
VDS =20V
Coss
6
Crss
4
2
0
1
5
9
13
17
21
25
29
0
2
4
6
8
10
12
14
16
18
20
Q G , Total Gate Charge (nC)
VDS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.2
0.95
0.7
100
10
T j =150 o C
T j =25 o C
1
0.45
0.1
0.2
0.01
-50
0
50
100
150
0
0.4
0.8
1.2
1.6
T j , Junction Temperature ( o C )
VSD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
AP9915H/J
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.5x RATED VDS
RG
G
10%
VGS
+
-
5 v
VGS
tr
td(off)
td(on)
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
5V
VDS
QG
TO THE
OSCILLOSCOPE
D
S
RATED VDS
QGD
QGS
G
VGS
+
1~ 3 mA
IG
-
ID
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
相关型号：
©2020 ICPDF网 联系我们和版权申明