AP9962AGH-HF_14 [A-POWER]
Single Drive Requirement;
| 型号： | AP9962AGH-HF_14 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Single Drive Requirement |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9962AGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
S
BVDSS
RDS(ON)
ID
40V
20mΩ
32A
▼ Single Drive Requirement
▼ Surface Mount Package
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
TO-252(H)
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9962AGJ)
are available for low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
32
A
20
A
120
A
PD@TC=25℃
Total Power Dissipation
27.8
W
Linear Derating Factor
0.22
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
℃/W
Rthj-c
Maixmum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
4.5
62.5
110
Rthj-a
Rthj-a
Data and specifications subject to change without notice
1
200906104
AP9962AGH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
20
30
mΩ
mΩ
VGS=4.5V, ID=16A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= +20V, VDS=0V
ID=20A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
-
250
IGSS
Qg
-
+100
12
2.7
7.8
7
20
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=32V
VGS=4.5V
-
VDS=20V
-
ID=20A
46
20
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=1.0Ω
-
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
820 1800
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
95
90
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=20A, VGS=0V
Min. Typ. Max. Units
VSD
trr
-
-
-
-
1.2
V
IS=10A, VGS=0V,
dI/dt=100A/µs
19
13
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9962AGH/J-HF
100
80
60
40
20
0
80
60
40
20
0
T C =25 o C
10V
7.0V
T C =150 o C
10V
7.0V
5.0V
4.5V
5.0V
4.5V
V
G =3.0V
V G =3.0V
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
24
20
16
12
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I D =16A
I D =20A
C =25 o C
V
G =10V
T
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16
12
8
1.6
1.4
1.2
1
T j =150 o C
T j =25 o C
0.8
0.6
0.4
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9962AGH/J-HF
f=1.0MHz
14
10000
1000
100
I D =20A
12
V DS =20V
10
V
DS =24V
DS =32V
V
Ciss
8
6
4
2
0
Coss
Crss
10
1
5
9
13
17
21
25
29
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Duty factor=0.5
100
10
1
0.2
0.1
100us
0.1
0.05
PDM
t
1ms
10ms
100ms
DC
0.02
T
0.01
Duty factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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