AP9972AGP-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9972AGP-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9972AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
60V
16mΩ
60A
D
S
▼ Single Drive Requirement
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
G
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
TO-220(P)
D
S
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+25
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
60
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
38
A
240
A
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.7
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
1.4
62
Rthj-a
Data and specifications subject to change without notice
1
201203075
AP9972AGP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
60
-
-
0.06
-
-
-
V
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
V/℃
mΩ
-
16
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS=+25V, VDS=0V
ID=40A
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
V
gfs
Forward Transconductance
Drain-Source Leakage Current
44
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
250
IGSS
Qg
-
+100
49
13
20
14
80
27
57
80
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=10V
-
VDS=30V
-
ID=40A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.75Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
2410 3860
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
290
240
2
-
-
f=1.0MHz
f=1.0MHz
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=40A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
48
75
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9972AGP-HF
200
150
100
50
100
80
60
40
20
0
T C =25 o C
10V
9.0V
T C =150 o C
10V
9.0V
8.0V
7.0V
8.0V
7.0V
V G =6.0V
V G =6.0V
0
0
2
4
6
8
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
18
16
14
12
10
2.0
1.6
1.2
0.8
0.4
I D =30A
I D = 30 A
T
C =25 o C
V
G =10V
Ω
5
6
7
8
9
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
1.5
1.3
1.1
0.9
0.7
0.5
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9972AGP-HF
f=1.0MHz
C iss
3200
2400
1600
800
0
12
I D = 40 A
10
V DS = 32 V
V
DS = 40 V
DS = 48 V
8
6
4
2
0
V
C oss
C rss
0
20
40
60
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
0.2
0.1
100
10
1
100us
1ms
10ms
100ms
DC
0.1
0.05
0.02
PDM
t
T
0.01
T C =25 o C
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.00001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
T j =25 o C
T j =150 o C
VG
V
DS =5V
60
40
20
0
QG
10V
QGD
QGS
Q
Charge
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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