首页 |元器件品牌

AP9974BGP [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9974BGP
型号： AP9974BGP
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：98K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP9974BGP  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-resistance  
BVDSS  
RDS(ON)  
ID  
60V  
13.5mΩ  
65A  
D
S
▼ Single Drive Requirement  
▼ Fast Switching Characteristic  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
applications and suited for low voltage applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
65  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
40  
A
260  
104  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1.2  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
200906193  
AP9974BGP  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=40A  
VGS=0V, ID=250uA  
60  
-
-
-
-
-
V
13.5 mΩ  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
VDS=60V, VGS=0V  
2
4
V
gfs  
Forward Transconductance  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50  
-
-
S
IDSS  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
25  
-
250  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+20V, VDS=0V  
ID=30A  
-
+100  
Qg  
52  
13  
20  
14  
64  
31  
44  
84  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=48V  
VGS=10V  
-
VDS=30V  
-
ID=30A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=1Ω  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
2650 4240  
VDS=25V  
250  
170  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=40A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
42  
77  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9974BGP  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
10V  
8.0V  
T C =25 o C  
T C = 150 o C  
10V  
8 .0V  
7.0 V  
7.0V  
6.0V  
6.0 V  
V G = 5.0 V  
40  
V G = 5.0 V  
0
0
2
4
6
8
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
22  
20  
18  
16  
14  
12  
10  
2.0  
1.6  
1.2  
0.8  
0.4  
I D = 30 A  
I D =40A  
T
C =25 o C  
V
G =10V  
Ω
4
5
6
7
8
9
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
40  
30  
20  
10  
0
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
T j =150 o C  
T j =25 o C  
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9974BGP  
f=1.0MHz  
12  
10000  
1000  
100  
I D = 30 A  
10  
V DS = 30 V  
C iss  
V
DS = 36 V  
DS = 48 V  
8
6
4
2
0
V
C oss  
C rss  
0
20  
40  
60  
80  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
1
Duty factor=0.5  
0.2  
0.1  
100  
10  
1
100us  
0.1  
0.05  
PDM  
t
0.02  
0.01  
1ms  
10ms  
100ms  
DC  
T
T C =25 o C  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
0.01  
0.00001  
0.1  
1
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

相关型号：

AP9974GH-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9974GJ-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9974GP

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9974GP-HF

 Fast Switching Characteristic
A-POWER

AP9974GP-HF_14

 Single Drive Requirement
A-POWER

AP9974GS

 TRANSISTOR 72 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, TO-263, 3 PIN, FET General Purpose Power
A-POWER

AP9974GS,P-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9974GS-HF

 Fast Switching Characteristic
A-POWER

AP9974GS-HF_14

 Single Drive Requirement
A-POWER

AP9974GS-HF_16

 Fast Switching Characteristic
A-POWER

AP9975GM

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9975GM-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER
©2020 ICPDF网 联系我们和版权申明