首页 |元器件品牌

AP9980GH [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9980GH
型号： AP9980GH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总6页 (文件大小：180K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP9980GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
80V  
D
S
▼ Single Drive Requirement  
▼ Fast Switching Performance  
45mΩ  
21.3A  
G
Description  
G
D
S
TO-252(H)  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
The TO-252 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9980GJ) are  
available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
80  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
21.3  
A
13.4  
A
80  
A
PD@TC=25℃  
Total Power Dissipation  
41.7  
W
Linear Derating Factor  
0.33  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
3.0  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
200810172  
AP9980GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
80  
-
-
0.07  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=12A  
VGS=4.5V, ID=8A  
V/℃  
mΩ  
RDS(ON)  
-
45  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=12A  
VDS=80V, VGS=0V  
-
3
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=150oC) VDS=64V ,VGS=0V  
20  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
10  
-
100  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+25V  
ID=12A  
-
+100  
Qg  
18  
5
30  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=64V  
VGS=4.5V  
VDS=40V  
ID=12A  
11  
11  
20  
29  
30  
-
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=3.3Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
1810 2900  
VDS=25V  
f=1.0MHz  
f=1.0MHz  
135  
96  
-
-
-
1.6  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=20A, VGS=0V  
IS=12A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
57  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
140  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9980GH/J  
60  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
10V  
6.0V  
5.0V  
4.5V  
10V  
6.0V  
5.0V  
4.5V  
T C =25 o C  
T C =150 o C  
V
G =3.0V  
V
G =3.0V  
0
3
6
9
12  
15  
18  
0
3
6
9
12  
15  
18  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
54  
50  
46  
42  
38  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
I D = 12 A  
I D = 8 A  
V
G =10V  
T
C =25 o C  
Ω
-50  
0
50  
100  
150  
3
5
7
9
11  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
8
6
4
2
0
3
2.5  
2
T j =150 o C  
T j =25 o C  
1.5  
1
0.5  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9980GH/J  
f=1.0MHz  
12  
10000  
1000  
100  
I D = 12 A  
10  
C iss  
V DS = 4 0V  
DS = 50 V  
8
6
4
2
0
V
V
DS = 64 V  
C oss  
C rss  
10  
1
5
9
13  
17  
21  
25  
29  
0
10  
20  
30  
40  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
10us  
100us  
0.2  
0.1  
10  
1ms  
0.1  
0.05  
0.02  
10ms  
100ms  
PDM  
1
t
T
0.01  
DC  
T C =25 o C  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.01  
0.00001  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-252  
Millimeters  
D
SYMBOLS  
MIN  
NOM MAX  
D1  
A2  
A3  
B1  
D
1.80  
0.40  
0.40  
6.00  
4.80  
3.50  
2.20  
0.50  
5.10  
0.50  
--  
2.30  
0.50  
0.70  
6.50  
5.35  
4.00  
2.63  
0.85  
5.70  
1.10  
2.30  
0.50  
2.80  
0.60  
1.00  
7.00  
5.90  
4.50  
3.05  
1.20  
6.30  
1.80  
--  
E2  
D1  
E3  
F
E3  
E1  
F1  
E1  
E2  
e
C
0.35  
0.65  
B1  
F1  
F
1.All Dimensions Are in Millimeters.  
e
e
2.Dimension Does Not Include Mold Protrusions.  
R : 0.127~0.381  
A2  
(0.1mm  
C
A3  
Part Marking Information & Packing : TO-252  
Laser Marking  
Part Number  
Meet Rohs requirement  
for low voltage MOSFET only  
9980GH  
Package Code  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
If last "S" is numerical letter : Rohs product  
If last "S" is English letter : HF & Rohs product  
5
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-251  
D
Millimeters  
A
SYMBOLS  
MIN  
NOM  
MAX  
c1  
D1  
A
A1  
B1  
B2  
c
2.20  
0.90  
0.50  
0.60  
0.40  
0.40  
6.40  
5.20  
6.70  
5.40  
----  
2.30  
1.20  
0.69  
0.87  
0.50  
0.50  
6.60  
5.35  
7.00  
5.80  
2.30  
6.84  
2.40  
1.50  
0.88  
1.14  
0.60  
0.60  
6.80  
5.50  
7.30  
6.20  
----  
E
E1  
c1  
D
D1  
E
A1  
B2  
B1  
E1  
e
F
F
5.88  
7.80  
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
c
e
e
Part Marking Information & Packing : TO-251  
Part Number  
meet Rohs requirement  
for low voltage MOSFET only  
9980GJ  
Package Code  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y ：Last Digit Of The Year  
WW ：Week  
SSS ：Sequence  
6

相关型号：

AP9980GH-HF

 暂无描述
A-POWER

AP9980GH-HF_14

 Single Drive Requirement
A-POWER

AP9980GJ

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9980GJ-HF

 暂无描述
A-POWER

AP9980GJ-HF_14

 Single Drive Requirement
A-POWER

AP9980GM

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9980GM-HF

 TRANSISTOR POWER, FET, FET General Purpose Power
A-POWER

AP9980H

 N-CHANNEL ENHANCEMENT MODE
A-POWER

AP9980J

 N-CHANNEL ENHANCEMENT MODE
A-POWER

AP9980M

 N-CHANNEL ENHANCEMENT MODE
A-POWER

AP9985GM

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9985M

 N-CHANNEL ENHANCEMENT MODE
A-POWER
©2020 ICPDF网 联系我们和版权申明