AP9U18GH [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9U18GH |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9U18GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
20V
14mΩ
37A
▼ Low On-resistance
▼ Low Gate Voltage Drive
G
Description
G
D
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
S
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
20
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±12
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
37
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
24
A
140
A
PD@TC=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
.
Value
Units
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
5.0
Rthj-a
110
Data and specifications subject to change without notice
200831071-1/4
AP9U18GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=4.5V, ID=18A
VGS=0V, ID=250uA
20
-
-
-
-
-
V
14
28
mΩ
mΩ
V
GS=2.5V, ID=9A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=5V, ID=18A
VDS=20V, VGS=0V
VGS= ±12V
ID=18A
0.5
-
18
-
1.5
V
gfs
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS
IGSS
Drain-Source Leakage Current
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
Qg
21
2.4
9
34
-
Qgs
Qgd
td(on)
tr
VDS=16V
VGS=4.5V
-
VDS=10V
8.3
102
24
12
-
ID=18A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=5V
RD=0.56Ω
VGS=0V
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1280 2050
VDS=20V
175
170
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=18A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
ns
nC
27
17
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9U18GH
80
60
40
20
0
100
80
60
40
20
0
T C =150 o C
T C =25 o C
5.0V
4.5V
3.5V
2.5V
5.0V
4.5V
3.5V
2.5V
V G = 2 .0V
V G = 2 .0V
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
18
16
14
12
10
8
1.4
1.2
1
I D = 9 A
I D =18A
T
C =25 ℃
V
G =4.5V
Ω
0.8
0.6
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
20
16
12
8
1.2
0.6
0.0
T j =150 o C
T j =25 o C
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9U18GH
f=1.0MHz
15
12
9
10000
1000
100
I D = 18 A
V DS = 16 V
C iss
6
3
C oss
C rss
0
0
10
20
30
40
50
1
5
9
13
17
21
25
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
100us
0.1
0.05
PDM
0.02
0.01
t
1ms
T
1
10ms
100ms
DC
T c =25 o
C
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.00001
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
Millimeters
D
SYMBOLS
MIN
NOM MAX
D1
A2
A3
B1
D
1.80
0.40
0.40
6.00
4.80
3.50
2.20
0.5
2.30
0.50
0.70
6.50
5.35
4.00
2.63
0.85
5.70
1.10
2.30
0.50
2.80
0.60
1.00
7.00
5.90
4.50
3.05
1.20
6.30
1.80
--
E2
D1
E3
F
E3
F1
E1
E2
e
E1
5.10
0.50
--
C
0.35
0.65
B1
F1
F
1.All Dimensions Are in Millimeters.
e
e
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
(0.1mm
C
A3
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
9U18GH
LOGO
Date Code (YWWSSS)
YWWSSS
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
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