关闭背景特效

AP01L60AT_10 [A-POWER]

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness; 先进的功率MOSFET采用先进的加工技术，以实现尽可能低的导通电阻，非常有效和costeffectiveness成效

AP01L60AT_10


元器件型号：	AP01L60AT_10
生产厂家：	ADVANCED POWER ELECTRONICS CORP.
描述和应用：	Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness 先进的功率MOSFET采用先进的加工技术，以实现尽可能低的导通电阻，非常有效和costeffectiveness成效
PDF文件：	总5页 (文件大小：111K)
下载文档：	下载PDF数据表文档文件
型号参数：AP01L60AT_10参数

AP01L60H

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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47 A-POWER

AP01L60H_10

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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18 A-POWER

AP01L60H-H

100% Avalanche Rated, Fast Switching Speed

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20 A-POWER

AP01L60H-HF

100% Avalanche Test, Fast Switching Characteristics

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32 A-POWER

AP01L60J

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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52 A-POWER

AP01L60J_10

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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16 A-POWER

AP01L60J-A-HF

TRANSISTOR POWER, FET, FET General Purpose Power

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0 A-POWER

AP01L60J-H

100% Avalanche Rated, Fast Switching Speed

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21 A-POWER

AP01L60J-HF

100% Avalanche Test, Fast Switching Characteristics

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21 A-POWER

AP01L60P

N-CHANNEL ENHANCEMENT MODE

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28 A-POWER

AP01L60P

N-CHANNEL ENHANCEMENT MODE

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12 A-POWER

AP01L60T

N-CHANNEL ENHANCEMENT MODE

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34 A-POWER

AP01L60T

N-CHANNEL ENHANCEMENT MODE

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18 A-POWER

AP01L60T_08

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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18 A-POWER

AP01L60T-HF

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

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0 A-POWER

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