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AP3302H [A-POWER]

N-CHANNEL ENHANCEMENT MODE; N沟道增强模式

AP3302H


元器件型号：	AP3302H
生产厂家：	ADVANCED POWER ELECTRONICS CORP.
描述和应用：	N-CHANNEL ENHANCEMENT MODE N沟道增强模式
PDF文件：	总4页 (文件大小：75K)
下载文档：	下载PDF数据表文档文件
型号参数：AP3302H参数

AP3302J

N-CHANNEL ENHANCEMENT MODE

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23 A-POWER

AP3302J

N-CHANNEL ENHANCEMENT MODE

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11 A-POWER

AP-3303301%

General Purpose Inductor, 330uH, 1%, 1 Element, Ferrite-Core

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0 VISHAY

AP-33033010%

General Purpose Inductor, 330uH, 10%, 1 Element, Ferrite-Core

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0 VISHAY

AP-33033015%

General Purpose Inductor, 330uH, 15%, 1 Element, Ferrite-Core

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0 VISHAY

AP-3303305%

General Purpose Inductor, 330uH, 5%, 1 Element, Ferrite-Core

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0 VISHAY

AP-3303305%

General Purpose Inductor, 330uH, 5%, 1 Element, Ferrite-Core

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0 VISHAY

AP3303H

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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30 A-POWER

AP3303H

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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4 A-POWER

AP3303J

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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6 A-POWER

AP3303J

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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34 A-POWER

AP3310GH

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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117 A-POWER

AP3310GH

TRANSISTOR 10 A, 20 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power

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3 A-POWER

AP3310GH-HF

Simple Drive Requirement, 2.5V Gate Drive Capability

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22 A-POWER

AP3310GH-HF_14

Simple Drive Requirement

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3 A-POWER

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