5SHX08F4510 [ABB]
Reverse Conducting Integrated Gate-Commutated Thyristor; 反向开展集成门极换流晶闸管
| 型号： | 5SHX08F4510 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Reverse Conducting Integrated Gate-Commutated Thyristor |
| 文件： | 总13页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDRM
ITGQM
ITSM
=
=
=
=
=
=
4500 V
630 A
Reverse Conducting Integrated
Gate-Commutated Thyristor
5×103 A
V(T0)
rT
1.8 V
5SHX 08F4510
2
mW
PRELIMINARY
VDC-link
2800 V
Doc. No. 5SYA1223-06 Aug 07
· High snubberless turn-off rating
· Optimized for medium frequency (<1 kHz) and
low turn-off losses
· High reliability
· High electromagnetic immunity
· Simple control interface with status feedback
· AC or DC supply voltage
· Suitable for series connection (contact factory)
Blocking
Maximum rated values Note 1
Conditions
min
min
typ
typ
max
Unit
Parameter
Symbol
Repetitive peak off-state
voltage
VDRM
Gate Unit energized
4500
V
Permanent DC voltage for VDC-link
100 FIT failure rate of
RC-GCT
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
2800
V
Characteristic values
Conditions
max
Unit
Parameter
Symbol
Repetitive peak off-state
current
IDRM
VD = VDRM, Gate Unit energized
20
mA
Mechanical data (see Fig. 20, 21)
Maximum rated values Note 1
Conditions
min
typ
max
Unit
Parameter
Symbol
Mounting force
Characteristic values
Parameter
Fm
14
16
18
kN
Conditions
min
typ
max
Unit
mm
mm
kg
Symbol
Pole-piece diameter
Dp
± 0.1 mm
47
Housing thickness
Weight
H
25.9
26.4
1.01
m
Surface creepage distance Ds
Anode to Gate
Anode to Gate
± 1.0 mm
33
13
mm
mm
mm
mm
mm
Air strike distance
Length
Da
l
296
47
Height
h
± 1.0 mm
Width IGCT
w
± 1.0 mm
208
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHX 08F4510
GCT Data
On-state (see Fig. 3 to 6, 23)
Maximum rated values Note 1
Conditions
min
typ
max
Unit
Parameter
Symbol
IT(AV)M
Max. average on-state
current
Half sine wave, TC = 85 °C,
Double side cooled
250
A
Max. RMS on-state current IT(RMS)
390
5×103
A
A
Max. peak non-repetitive
surge on-state current
ITSM
tp = 10 ms, Tj = 115 °C, sine wave
after surge: VD = VR = 0 V
Limiting load integral
I2t
125×103 A2s
9×103
Max. peak non-repetitive
surge on-state current
ITSM
tp = 1 ms, Tj = 115 °C, sine wave
after surge: VD = VR = 0 V
A
Limiting load integral
I2t
40.5×103 A2s
Critical rate of rise of on-
state current
diT/dtcr For higher diT/dt and current lower
than 30 A an external retrigger pulse
is required.
TBD
A/µs
Characteristic values
Parameter
Conditions
min
typ
max
3
Unit
V
Symbol
On-state voltage
VT
IT = 630 A, Tj = 115 °C
Threshold voltage
Slope resistance
V(T0)
rT
Tj = 115 °C
IT = 100...1000 A
1.8
2
V
mW
Turn-on switching (see Fig. 23, 25)
Maximum rated values Note 1
Conditions
Symbol
min
min
typ
typ
max
Unit
Parameter
Critical rate of rise of on-
state current
Characteristic values
Parameter
diT/dtcr f = 500 Hz, Tj = 115 °C,
IT = 630 A, VD = 2700 V
250
A/µs
Conditions
max
Unit
µs
Symbol
Turn-on delay time
tdon
VD = 2700 V, Tj = 115 °C
IT = 630 A, di/dt = VD / Li
Li = 10.7 µH
3
7
Turn-on delay time status
feedback
tdon SF
µs
CCL = 2 µF, LCL = 1 µH
Rise time
tr
1
µs
J
Turn-on energy per pulse
Eon
0.25
Turn-off switching (see Fig. 7, 8, 23, 25)
Maximum rated values Note 1
Conditions
min
typ
max
Unit
Parameter
Symbol
Max. controllable turn-off
current
ITGQM
800
A
V
DM £ VDRM, Tj = 115 °C,
VD = 1900 V, RS = 1.2 W,
CCL = 2 µF, LCL £ 1 µH
Max. controllable turn-off
current
ITGQM
630
A
V
DM £ VDRM, Tj = 115 °C,
VD = 2700 V, RS = 1.2 W,
CCL = 2 µF, LCL £ 1 µH
Characteristic values
Parameter
Conditions
VD = 2700 V, Tj = 115 °C
min
typ
max
Unit
µs
Symbol
Turn-off delay time
tdoff
6
7
VDM £ VDRM, RS = 1.2 W
Turn-off delay time status
feedback
tdoff SF
µs
ITGQ = 630 A, Li = 10.7 µH
CCL = 2 µF, LCL = 1 µH,
Turn-off energy per pulse
Eoff
2.9
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 2 of 13
5SHX 08F4510
Diode Data
On-state (see Fig. 9 to 12, 24, 25)
Maximum rated values Note 1
Conditions
min
typ
max
130
Unit
Parameter
Symbol
Max. average on-state
current
IF(AV)M
Half sine wave, TC = 85 °C
A
Max. RMS on-state current IF(RMS)
210
6.1×103
A
A
Max. peak non-repetitive
surge current
IFSM
tp = 10 ms, Tvj = 115°C, VR = 0 V
tp = 1 ms, Tvj = 115°C, VR = 0 V
Limiting load integral
I2t
186.1×103 A2s
15.6×103
Max. peak non-repetitive
surge current
IFSM
A
Limiting load integral
Characteristic values
Parameter
I2t
121.7×103 A2s
Conditions
min
min
typ
typ
max
5.7
Unit
V
Symbol
On-state voltage
VF
IF = 630 A, Tvj = 115°C
Threshold voltage
Slope resistance
V(F0)
rF
Tvj = 115°C
IF = 100...1000 A
2.8
V
4.6
mW
Turn-on (see Fig. 24, 25)
Characteristic values
Conditions
max
80
Unit
V
Parameter
Symbol
Peak forward recovery
voltage
VFRM
dIF/dt = 300 A/µs, Tvj = 115°C
dIF/dt = 1400 A/µs, Tvj = 115°C
250
V
Turn-off (see Fig. 13 to 17, 24, 25)
Maximum rated values Note 1
Conditions
Symbol
min
min
typ
typ
max
Unit
Parameter
Max. decay rate of on-state di/dtcrit
current
IFM = 630 A, Tvj = 115 °C
VDClink = 2700 V
250
A/ms
Characteristic values
Conditions
max
400
TBD
1.5
Unit
A
Parameter
Symbol
IFM = 630 A, VDC-Link = 2700 V
-dIF/dt = 250 A/µs, LCL = 1 µH
CCL = 2 µF, RS = 1.2 W,
Reverse recovery current
IRM
Reverse recovery charge
Turn-off energy
Qrr
Err
µC
J
Tvj = 115°C, DCL = 5SDF 03D4502
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 3 of 13
5SHX 08F4510
Gate Unit Data
Power supply (see Fig. 18, 19)
Maximum rated values Note 1
Conditions
Symbol
min
typ
max
Unit
Parameter
Gate Unit voltage
(Connector X1)
VGIN,RMS AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
28
40
V
galvanic isolation to power circuit.
Min. current needed to power IGIN Min Rectified average current
1.1
A
up the Gate Unit
see application note 5SYA 2031
Gate Unit power consumption PGIN Max
80
W
Characteristic values
Conditions
Symbol
min
typ
max
Unit
Parameter
Internal current limitation
IGIN Max Rectified average current limited by
the Gate Unit
7
A
Optical control input/output 2) (see Fig. 23)
Maximum rated values Note 1
Conditions
min
40
typ
typ
max
Unit
µs
Parameter
Symbol
Min. on-time
ton
Min. off-time
Characteristic values
Parameter
toff
40
µs
Conditions
min
max
-1
Unit
dBm
dBm
dBm
dBm
ns
Symbol
Optical input power
Pon CS
-15
CS: Command signal
Poff CS SF: Status feedback
Optical noise power
-45
-1
Valid for 1mm plastic optical fiber
Optical output power
Optical noise power
Pon SF
Poff SF
-19
(POF)
-50
400
1100
Pulse width threshold
tGLITCH Max. pulse width without response
External retrigger pulse width
tretrig
600
ns
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 20 to 22)
Description
Parameter
Symbol
Gate Unit power connector
X1
AMP: MTA-156, Part Number 641210-5 3)
Avago, Type HFBR-2528 4)
Avago, Type HFBR-1528 4)
LWL receiver for command signal
CS
SF
LWL transmitter for status feedback
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Avago Technologies, www.avagotech.com
Visual feedback (see Fig. 22)
Description
Symbol
Color
Parameter
Gate OFF
LED1 "Light" when GCT is off
(green)
(yellow)
(red)
Gate ON
LED2 "Light" when gate-current is flowing
LED3 "Light" when not ready / Failure
LED4 "Light" when power supply is within specified range
Fault
Power supply voltage OK
(green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 4 of 13
5SHX 08F4510
Thermal
Maximum rated values Note 1
Conditions
Conditions
min
0
typ
typ
max
Unit
°C
Parameter
Symbol
Junction operating temperature
Tvj
115
60
Storage temperature range
Tstg
Ta
-40
0
°C
Ambient operational temperature
Characteristic values
60
°C
min
max
40
Unit
K/kW
K/kW
Parameter
Symbol
Thermal resistance junction-to-case
of GCT
Rth(jc)
Double side cooled
Diode not dissipating
Thermal resistance case-to-
heatsink of GCT
Rth(ch)
Rth(jc)
Rth(ch)
16
Thermal resistance junction-to-case
of Diode
53
17
K/kW
K/kW
Double side cooled
GCT not dissipating
Thermal resistance case-to-
heatsink of Diode
Analytical function for transient thermal
impedance:
n
Z
thJC (t) =
R
(1 - e-t/t i )
i
å
i=1
GCT
i
1
2
3
4
Ri(K/kW)
25.085
0.5591
9.201
3.622
0.0067
2.114
0.0017
0.0708
ti(s)
Diode
i
1
2
3
4
Ri(K/kW)
ti(s)
33.329
0.5595
12.207
0.0710
4.726
0.0067
2.742
0.0017
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time (max. values)
Max. Turn-off current for Lifetime operation
·
·
·
calculated lifetime of on-board capacitors
20 years
with slightly forced air cooling (air velocity
> 0.5 m/s)
TBD
strong air cooling allows for increased
ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 5 of 13
5SHX 08F4510
GCT Part
Max. on-state characteristic model:
Max. on-state characteristic model:
VT115
VT25
= A +B ×IT +C ×ln(IT +1)+D × IT
= A +B ×IT +C ×ln(IT +1)+D × IT
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Valid for iT = TBD – TBD A
Valid for iT = TBD – TBD A
A25
B25
C25
D25
A115
B115
C115
D115
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
IT [A]
1200
Tj = 115°C
1100
1000
900
800
700
600
500
400
300
200
100
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VT [V]
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
TBD
TBD
Fig. 5 GCT surge on-state current vs. pulse length,
Fig. 6 GCT surge on-state current vs. number of
half-sine wave
pulses, half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 6 of 13
5SHX 08F4510
Eoff [J]
3.0
Tj = 115°C
VD = 2700 V
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
600
700
ITGQ [A]
Fig. 7 GCT turn-off energy per pulse vs. turn-off
Fig. 8 GCT Safe Operating Area
current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 7 of 13
5SHX 08F4510
Diode Part
Max. on-state characteristic model:
Max. on-state characteristic model:
VF115
VF25
= A +B ×IT +C ×ln(IT +1)+D × IT
= A +B ×IT +C ×ln(IT +1)+D × IT
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Valid for IT = TBD – TBD A
Valid for IF = TBD – TBD A
A25
B25
C25
D25
A115
B115
C115
D115
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
IF [A]
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Tj = 115°C
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
VF [V]
Fig. 9 Diode on-state voltage characteristics
Fig. 10 Diode on-state voltage characteristics
TBD
TBD
Fig. 11 Diode surge on-state current vs. pulse length,
Fig. 12 Diode surge on-state current vs. number of
half-sine wave
pulses, half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 8 of 13
5SHX 08F4510
Err [J]
2.0
Tj = 115 °C
m
-diF/dt = 250 A/ s
1.5
1.0
0.5
0.0
VD = 2700V
TBD
0
200
400
600
800
1000
IFQ [A]
Fig. 13 Upper scatter range of diode turn-off energy
Fig. 14 Upper scatter range of diode turn-off energy
per pulse vs. turn-off current
per pulse vs decay rate of on-state current
Irr [A]
500
Tj = 115°C
diF/dt = 250 A/µs
VD = 2700 V
450
400
350
300
TBD
0
100
200
300
400
500
600
700
IFQ [A]
Fig. 15 Upper scatter range of diode reverse recovery
Fig. 16 Upper scatter range of diode reverse recovery
charge vs decay rate of on-state current
current vs decay rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 9 of 13
5SHX 08F4510
TBD
Fig. 17 Diode Safe Operating Area
Fig. 18 Max. Gate Unit input power in chopper mode
TBD
Fig. 19 Burst capability of Gate Unit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 10 of 13
5SHX 08F4510
Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
1) VGIN (AC or DC+)
2) VGIN (AC or DC+)
3) Cathode
4) VGIN (AC or DC-)
5) VGIN (AC or DC-)
Fig. 21 Detail A: pin out of supply connector X1.
RC-IGCT
Gate Unit
RC-GCT
Anode
Supply (VGIN
)
X1
Internal Supply (No galvanic isolation to power circuit)
LED1
Gate
LED2
LED3
LED4
Turn-
On
Circuit
Logic
Command Signal (Light)
Status Feedback (Light)
Cathode
Rx
CS
SF
Monitoring
Turn-
Off
Circuit
Tx
Fig. 22 Block diagram
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 11 of 13
5SHX 08F4510
Turn-on
External
Turn-off
Retrigger pulse
dIT/dt
VDM
ITM
VDSP
VD
VD
IT
0.9 VD
IT
0.4 ITGQ
0.1 VD
VD
CS
SF
CS
SF
CS
SF
tretrig
tdoff SF
tdoff
tdon SF
tdon
tr
ton
toff
Fig. 23 General current and voltage waveforms with IGCT-specific symbols
VF(t), IF (t)
dIF/dt
IF (t)
-dIF/dt
IF (t)
VFR
Qrr
VF (t)
VF (t)
t
tfr
tfr (typ) 10 µs
VR (t)
IRM
Fig. 24 General current and voltage waveforms with Diode-specific symbols
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1223-06 Aug 07
page 12 of 13
5SHX 08F4510
Li
LCL
DUT
GCT - part
DCL
Rs
CCL
VDC
DUT
Diode - part
LLoad
Fig. 25 Test circuit
Related documents:
5SYA 2031
5SYA 2032
5SYA 2036
5SYA 2046
5SYA 2048
5SYA 2051
5SZK 9107
Applying IGCT Gate Units
Applying IGCTs
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Failure rates of IGCTs due to cosmic rays
Field measurements on High Power Press Pack Semiconductors
Voltage ratings of high power semiconductors
Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1223-06 Aug 07
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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