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5STP18M5800

更新时间：2024-09-18 05:33:26
品牌：ABB
描述：Phase Control Thyristor

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5STP18M5800 概述

Phase Control Thyristor 相位控制晶闸管

5STP18M5800 数据手册

通过下载5STP18M5800数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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V
DSM  
ITAVM  
ITRMS  
ITSM  
V
T0  
=
=
=
6500 V  
1800 A  
2820 A  
Phase Control Thyristor  
= 32000 
A  
5STP 18M6500  
=
=
1.2 V  
0.43  
r
T  
mΩ  
Doc. No. 5SYA1010-03 Jan. 02  
• Patented free-floating silicon technology  
• Low on-state and switching losses  
• Designed for traction, energy and industrial applications  
• Optimum power handling capability  
• Interdigitated amplifying gate  
Blocking  
Maximum rated values 1)  
Symbol  
Conditions  
5STP 18M6500 5STP 18M6200 5STP 18M5800  
VDSM, VRSM f = 5 Hz, tp = 10ms  
VDRM, VRRM f = 50 Hz, tp = 10ms  
6500 V  
5600 V  
7000 V  
6200 V  
5300 V  
6700 V  
5800 V  
4900 V  
6300 V  
VRSM1  
tp = 5ms, single pulse  
dV/dtcrit  
Exp. to 0.67 x VDRM, Tj = 125°C  
2000 V/µs  
Characteristic values  
Parameter  
Forwarde leakage current  
Reverse leakage current  
Symbol Conditions  
IDSM VDSM, Tj = 125°C  
IRSM VRSM, Tj = 125°C  
min  
typ  
max  
600  
600  
Unit  
mA  
mA  
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
FM  
min  
min  
typ  
max  
Unit  
Mounting force  
Acceleration  
Acceleration  
Characteristic values  
Parameter  
63  
70  
84  
50  
100  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Symbol Conditions  
m
typ  
1.85  
max  
Unit  
Weight  
kg  
Surface creepage distance  
Air strike distance  
DS  
Da  
45  
21  
mm  
mm  
1) Maximum Ratings are those values beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5STP 18M6500  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
1800  
Unit  
Max. average on-state  
ITAVM  
Half sine wave, Tc = 70°C  
A
current  
RMS on-state current  
ITRMS  
ITSM  
2820  
32000  
A
A
Max. peak non-repetitive  
tp = 10 ms, Tj = 125°C,  
VD=VR = 0 V  
surge current  
Limiting load integral  
I2t  
ITSM  
5120  
35000  
kA2s  
A
Max. peak non-repetitive  
tp = 8.3 ms, Tj = 125°C,  
VD=VR=0 V  
surge current  
Limiting load integral  
Characteristic values  
Parameter  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
I2t  
5000  
kA2s  
Symbol Conditions  
min  
typ  
max  
1.9  
1.2  
0.43  
125  
75  
500  
250  
Unit  
VT  
VT0  
rT  
IT = 1600 A, Tj= 125°C  
IT = 1000 A - 3000 A, Tj= 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
V
V
mΩ  
mA  
mA  
mA  
mA  
IH  
Latching current  
IL  
Tj = 25°C  
Tj = 125°C  
Switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
250  
Unit  
Critical rate of rise of on-  
di/dtcrit  
Cont.  
f = 50 Hz  
Cont.  
A/µs  
A/µs  
µs  
state current  
T
j
= 125°C, ITRM = 2000 A,  
VD ≤ 0.67⋅VDRM  
,
Critical rate of rise of on-  
state current  
di/dtcrit  
1000  
IFG = 2 A, tr = 0.5 µs  
f = 1Hz  
Circuit-commutated turn-off tq  
time  
Tj = 125°C, ITRM = 2000 A,  
VR = 200 V, diT/dt = -1 A/µs,  
800  
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,  
Characteristic values  
Parameter  
Recovery charge  
Symbol Conditions  
min  
2000  
max  
3000  
Unit  
µAs  
Qrr  
Tj = 125°C, ITRM = 2000 A,  
VR = 200 V, diT/dt = -1 A/µs  
Delay time  
td  
3
µs  
VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1010-03 Jan. 02  
page 2 of 6  
5STP 18M6500  
Triggering  
Maximum rated values 1)  
Parameter  
Peak forward gate voltage VFGM  
Peak forward gate current IFGM  
Peak reverse gate voltage VRGM  
Symbol Conditions  
min  
min  
typ  
max  
Unit  
12  
10  
10  
3
V
A
V
Gate power loss  
PG  
For DC gate current  
W
Average gate power loss  
Characteristic values  
Parameter  
PGAV  
see Fig. 9  
Symbol Conditions  
typ  
max  
Unit  
Gate trigger voltage  
VGT  
Tj = 25°C  
2.6  
V
Gate trigger current  
Gate non-trigger voltage  
Gate non-trigger current  
IGT  
VGD  
IGD  
Tj = 25°C  
VD = 0.4 x VDRM, Tvjmax = 125°C  
VD = 0.4 x VDRM, Tvjmax = 125°C  
400  
mA  
V
mA  
0.3  
10  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
Tj  
min  
typ  
typ  
max  
125  
Unit  
°C  
Operating junction  
temperature range  
Storage temperature range Tstg  
-40  
140  
°C  
Characteristic values  
Parameter  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
Double side cooled  
9
K/kW  
to case  
Rth(j-c)A Anode side cooled  
Rth(j-c)C Cathode side cooled  
18  
18  
1.5  
K/kW  
K/kW  
K/kW  
Thermal resistance case to Rth(c-h)  
Double side cooled  
heatsink  
Rth(c-h)  
Single side cooled  
3
K/kW  
Analytical function for transient thermal  
impedance:  
n
(t) = åR  
Z
thJC  
i
(1-e-t/τ i )  
i=1  
i
1
2
3
4
Ri(K/kW)  
6.28  
1.07  
1.09  
0.52  
0.8956  
0.1606  
0.0256 0.0093  
τi(s)  
Fig. 1 Transient thermal impedance junction-to case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1010-03 Jan. 02  
page 3 of 6  
5STP 18M6500  
On-state characteristic model:  
VT = A+ B⋅iT +C⋅ln(iT +1)+ D⋅ IT  
Valid for iT = 400 – 6000 A  
A
B
C
D
8.7142e-1  
9.3000e-5 -2.0798e-2 2.5657e-2  
Fig. 2 On-state characteristics.  
Fig. 3 On-state characteristics.  
Tj=125°C, 10ms half sine  
Fig. 4 On-state power dissipation vs. mean on-  
Fig. 5 Max. permissible case temperature vs.  
state current. Turn - on losses excluded.  
mean on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1010-03 Jan. 02  
page 4 of 6  
5STP 18M6500  
Fig. 6 Surge on-state current vs. pulse length. Half-  
Fig. 7 Surge on-state current vs. number of pulses.  
sine wave.  
Half-sine wave, 10 ms, 50Hz.  
IG (t)  
IGM  
≈ 2..5 A  
≥ 1.5 IGT  
IGon  
100 %  
90 %  
IGM  
diG/dt ≥ 2 A/µs  
tr  
≤ 1 µs  
tp(IGM  
)
≈ 5...20µs  
diG/dt  
IGon  
10 %  
tr  
t
tp (IGM  
)
tp (IGon  
)
Fig. 8 Recommendet gate current waveform.  
Fig. 9 Max. peak gate power loss.  
Fig. 10 Recovery charge vs. decay rate of on-state  
Fig. 11 Peak reverse recovery current vs. decay rate  
current.  
of on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1010-03 Jan. 02  
page 5 of 6  
5STP 18M6500  
Fig. 12 Device Outline Drawing.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1010-03 Jan. 02  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
abbsem@ch.abb.com  
www.abbsem.com  
Email  
Internet  

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