IPP050N10NF2S
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP050N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
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INFINEON
KYOCERA AVX
AMPHENOL
SAMTEC
WALSIN
VISHAY
MSYSTEM
GLENAIR
ITT
MICROSEMI
YAGEO
ECLIPTEK
ABRACON
MOLEX
VICOR
KEMET
MTRONPTI
TI
PANASONIC
CTS
SCHURTER
KNOWLES
MURATA
TE
TOREX
SILICON
BOURNS
GOLLEDGE
STMICROELECTRONICS
RCD
BEL
NXP
MICROCHIP
TDK
KOA
INFINEON
FOXCONN
EUROQUARTZ
MAXIM
LITTELFUSE
VCC
RENESAS
CDE
IDT
AVAGO
HONEYWELL
ONSEMI
FH
NICHICON
APITECH
ROHM
EPCOS
AGILENT
GRAYHILL
ADI
Carling Technologies
RICOH