ACE25AA128G_技术文档

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Description

The ACE25AA128G (128M-bit) Serial Peripheral Interface (SPI). and supports the Dual/Quad SPI:

Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O

data is transferred with speed of 216Mbits/s and the Quad I/O & Quad output data is transferred wit speed

of 432 Mbits/s.

Features



128M-bit Serial Flash

16,384K-byte

256 bytes per programmable page

Support SFDP & Unique ID



Standard, Dual, Quad SPI

Standard SPI: SCLK, CS#, SI, SO, SO, WP#, HOLD#

Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#

Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3

QPI: SCLK, CS#, IO0, IO1, IO2, IO3

Flexible Architecture



Sector of 4K-byte

Block of 32/64k-byte



Advanced security Features

4*256-Byte Security Registers With OTP Lock

Software/Hardware Write Protection

Write protect all/portion of memory via software

Enable/Disable protection with WP# Pin

Top or Bottom, Sector or Block selection

Package Options



See 1.1 Available Ordering OPN

All Pb-free packages are compliant RoHS, Halogen-Free and REACH.

Temperature Range & Moisture Sensitivity Level

Industrial Level Temperature (-40~+85°C), MSL3

Industrial Plus Level Temperature (-40°C to +105°C), MSL1

Low Power Consumption

20mA maximum active current

0.2uA maximum standby current

VER 1.1

1

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector



Single Power Supply Voltage: Full voltage range:2.7~3.6V

Minimum 100,000 Program/Erase Cycle

High Speed Clock Frequency

108MHz for fast read with 30PF load

Dual I/O Data transfer up to 216Mbits/s

Quad I/O Data transfer up to 432Mbits/s

QPI Mode Data transfer up to 288Mbits/s

Continuous Read With 8/16/32/64-byte Wrap

Program/Erase Speed



Page Program time: 250uS typical

Sector Erase time: 70ms typical

Block Erase time: 0.15/0.2s typical

Chip Erase time: 35s typical

Absolute Maximum Ratings

Parameter

Value

-40 to 85

-65 to 150

200

Unit

℃

Ambient Operating Temperature

Storage Temperature

Output Short Circuit Current

Applied Input/Output Voltage

VCC

℃

mA

V

-0.5 to 4.0

V

VER 1.1

2

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Packaging Type

SOP-8L

USON4*4-8(0.85~0.80)

WSON-8

SOP-16

Pin Configurations

I/O

Pin Name

CS#

Functions

Chip Select Input

I

SO(IO1)

WP#(IO2)

VSS

I/O

Data Output(Data Input Output 1)

Write Protect Input (Data Input Output 2)

Ground

SI(IO0)

SCLK

I/O

I

Data Input(Data Input Output 0)

Serial Clock Input

HOLD#(IO3)

VCC

I/O

Hold Input (Data Input Output 3)

Power Supply

Ordering information

ACE25AA128G XX + X H

Halogen-free

U: Tube

T: Tape and Reel

Pb - free

FML: SOP-8L (208mil)

FP: SOP-16 (300mil)

UD8B: USON4*4-8(0.85~0.80)

MM: WSON-8

VER 1.1

3

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Block Diagram

Uniform Block Sector Architecture

ACE25AA128G 64K Bytes Block SectorArchitecture

Block

Sector

4095

……

Address Range

FFF000H

……

FFFFFFH

……

255

4080

4079

……

4064

……

47

FF0000H

FEF000H

……

FF0FFFH

FEFFFFH

……

254

……

2

FE0000H

FE0FFFH

……

02F000H

02FFFFH

……

32

31

……

16

15

……

0

020000H

01F000H

……

010000H

00F000H

……

020FFFH

01FFFFH

……

010FFFH

00FFFFH

……

1

0

000000H

000FFFH

VER 1.1

4

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Device Operation

The ACE25AA128G features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip

Select (CS#), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are

supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of

SCLK. Note: “WP#” & “HOLD#” pin require external pull-up.

Dual SPI

The ACE25AA128G supports Dual SPI operation when using the “Dual Output Fast Read” and “Dual I/O

Fast Read” (3BH and BBH) commands. These commands allow data to be transferred to or from the

device at two times the rate of the standard SPI. When using the Dual SPI command the SI and SO pins

become bidirectional I/O pins: IO0 and IO1. Note: “WP#” & “HOLD#” pin require external pull-up.

Quad SPI

The ACE25AA128G supports Quad SPI operation when using the “Quad Output Fast Read”, “Quad I/O

Fast Read”, “Quad I/O Word Fast Read” (6BH, EBH, E7H) commands. These commands allow data to be

transferred to or from the device at four times the rate of the standard SPI. When using the Quad SPI

command the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and WP# and HOLD# pins

become IO2 and IO3. Quad SPI commands require the non-volatile Quad Enable bit (QE) in Status

Register to be set .

QPI

The ACE25AA128G supports Quad Peripheral Interface (QPI) operations only when the device is

switched from Standard/Dual/Quad SPI mode to QPI mode using the “Enable the QPI (38H)” command.

The QPI mode utilizes all four IO pins to input the command code. Standard/Dual/Quad SPI mode and

QPI mode are exclusive. Only one mode can be active at any given times. “Enable the QPI (38H)” and

“Disable the QPI (FFH)” commands are used to switch between these two modes. Upon power-up and

after software reset using “”Reset (99H)” command, the default state of the device is Standard/Dual/Quad

SPI mode. The QPI mode requires the non- volatile Quad Enable bit (QE) in Status Register to be set.

Hold

The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the

operation of write status register, programming, or erasing in progress .

The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK

signal being low (if SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD

condition ends on rising edge of HOLD# signal with SCLK being low (If SCLK is not being low, HOLD

operation will not end until SCLK being low).

VER 1.1

5

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high

during HOLD operation, it will reset the internal logic of the device. To re-start communication with chip,

the HOLD# must be at high and then CS# must be at low.

RESET

The RESET# pin allows the device to be reset by the control. For the WSON8 package, the pin7 can be

configured as a RESET# pin depending on the status register setting, which need QE=0 and

HOLD/RST=1. On the SOP16 package, a dedicated RESET# pin is provided and it is independent of QE

bit setting.

The RESET# pin goes low for a period of tRLRH or longer will reset the flash. After reset cycle, the flash

is at the following states:



Standby mode

All the volatile bits will return to the default status as power on.

VER 1.1

6

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Data Protection

The ACE25AA128G provides the following data protection methods:

Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL

bit will return to reset by the following situation:



Power-Up

Write Disable (WRDI)

Write Status Register (WRSR)

Page Program (PP)

Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE)

Software Protection Mode:



The Block Protect (BP4, BP3, BP2, BP1,BP0) bits define the section of the memory array that can be

read but not change

Hardware Protection Mode:

WP# going low to protected the BP0~BP4 bits and SRP bit

Deep Power-Down Mode:



Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the

Release from Deep Power-Down Mode command

VER 1.1

7

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Table 1.ACE25AA128G Protected Area Sizes (CMP=0)

Status bit

Memory Content

BP4

X

0

BP3 BP2 BP1 BP0

Blocks

Addresses

None

Density

None

256KB

512KB

1MB

Portion

None

X

0

1

X

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

X

0

1

0

1

X

0

None

252 to 255 FC0000H – FFFFFFH

248 to 255 F80000H – FFFFFFH

240 to 255 F00000H – FFFFFFH

224 to 255 E00000H – FFFFFFH

192 to 255 C00000H – FFFFFFH

128 to 255 800000H – FFFFFFH

Upper 1/64

Upper 1/32

Upper 1/16

Upper 1/8

Upper 1/4

Upper 1/2

Lower 1/64

Lower 1/32

Lower 1/16

Lower 1/8

Lower 1/4

Lower 1/2

ALL

0

2MB

0

4MB

0

8MB

0

0 to 3

0 to 7

0 to 15

0 to 31

0 to 63

0 to 127

0 to 255

255

000000H – 03FFFFH

000000H – 0FFFFFH

000000H – 1FFFFFH

000000H – 3FFFFFH

000000H – 7FFFFFH

000000H – FFFFFFH

FFF000H – FFFFFFH

FFE000H – FFFFFFH

FFC000H – FFFFFFH

FF8000H – FFFFFFH

000000H – 000FFFH

000000H – 001FFFH

000000H – 003FFFH

000000H – 007FFFH

256KB

512KB

1MB

0

2MB

0

4MB

0

8MB

X

1

16MB

4KB

Top Block

Bottom Block

1

255

8KB

1

255

16KB

32KB

4KB

1

255

1

255

1

0

1

0

8KB

1

0

16KB

32KB

1

0

1

0

VER 1.1

8

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Table 1.1ACE25AA128G Protected Area Sizes (CMP=1)

Status bit

Memory Content

BP4

X

0

BP3 BP2 BP1 BP0

Blocks

Addresses

Density

ALL

Portion

ALL

X

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0 to 255 000000H – FFFFFFH

0 to 251 000000H – FBFFFFH

0 to 247 000000H – F7FFFFH

0 to 239 000000H – EFFFFFH

0 to 223 000000H – DFFFFFH

0 to 191 000000H – BFFFFFH

0 to 127 000000H – 7FFFFFH

4 to 255 040000H – FFFFFFH

8 to 255 080000H – FFFFFFH

16 to 255 100000H – FFFFFFH

32 to 255 200000H – FFFFFFH

64 to 255 400000H – FFFFFFH

16128KB

15872KB

15MB

Lower 63/64

Lower 31/32

Lower 15/16

Lower 7/8

Lower 3/4

Upper 1/2

Upper 63/64

Upper 31/32

Upper15/16

Upper 7/8

Upper 3/4

0

14MB

0

12MB

0

8MB

0

16128KB

15872KB

15MB

0

14MB

0

12MB

128 to

0

1

0

800000H – FFFFFFH

255

8MB

Upper 1/2

X

1

X

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

X

0

1

0

1

X

0

NONE

0 to 255 000000H – FFEFFFH

0 to 255 000000H – FFDFFFH

0 to 255 000000H – FFBFFFH

0 to 255 000000H – FF7FFFH

0 to 255 001000H – FFFFFFH

0 to 255 002000H – FFFFFFH

0 to 255 004000H – FFFFFFH

0 to 255 008000H – FFFFFFH

16380KB

16376KB

16368KB

16352KB

16380KB

16376KB

16368KB

16352KB

L-4095/4096

L-2047/2048

L-1023/1024

L-511/512

U-4095/4096

U-2047/2048

U-1023/1024

U-511/512

VER 1.1

9

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Table 1.2ACE25AA128G Individual Block Protection (WPS=1)

Individual Block Lock

Operation

Block

Sector

Address range

FFFFFFH

4095

……

4080

4079

……

4064

……

47

FFF000H

……

255

……

FF0FFFH

FEFFFFH

……

FF0000H

FEF000H

……

254

……

2

FE0000H

……

FE0FFFH

……

32 Sec-

tors(Top/Bottom)/254

……

Blocks Block Lock:

36H+Address Block

Unlock: 39H+Address

Read Block Lock:

……

3DH+Address Global Block

Lock: 7EH Global Block

Unlock: 98H

02F000H

……

02FFFFH

……

32

020000H

01F000H

……

020FFFH

01FFFFH

……

31

1

……

16

010000H

00F000H

……

010FFFH

00FFFFH

……

15

0

……

0

000000H

000FFFH

Status Register

S15

S14

S13

S12

S11

LB1

S10

LB0

S9

S8

Reserved

CMP

HOLD/RST

WPS

QE

SRP1

S7

S6

S5

S4

S3

S2

S1

S0

SRP0

BP4

BP3

BP2

BP1

BP0

WEL

WIP

The status and control bits of the Status Register are as follows:

VER 1.1

10

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

WIP bit.

The Write In Progress (WIP) bit indicates whether the memory is busy in program/erase/write status

register progress. When WIP bit sets to 1, the device is busy in program/erase/write status register

progress, When WIP bit sets 0, means the device is not in program/ erase/ write status register progress.

WEL bit.

The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1

the internal Write Enable Latch is set. When set to 0, the internal Write Enable Latch is reset and no Write

Status Register, Program or Erase command is accepted.

BP4, BP3,BP2, BP1,BP0 bits.

The Block Protect (BP4, BP3, BP2, BP1, BP0) bits are non-volatile. They define the size of the area to be

software protected against Program and Erase commands. These bits are written with the Write Status

Register (WRSR) command. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the

relevant memory area (as defined in Table1) becomes protected against Page Program (PP), Sector

Erase (SE) and Block Erase (BE) commands. The Block Protect (BP4, BP3, BP2, BP1, BP0) bits can be

written provided that the Hardware Protected mode has not been set. The Chip Erase (CE) command is

executed if the Block Protect (BP2, BP1, BP0) bits are 0 and CMP=0 or the Block Protect (BP2, BP1, BP0)

bits are 1 and CMP=1.

SRP1,SRP0 bit.

The Status Register Protect (SRP1 and SRP0) bit is a non-volatile Read/Write bit in the status register.

The SRP bit controls the method of write protection: software protection, hardware protection, power

supply lock-down or one time programmable protection.

SRP1 SRP0 WP#

Status Register

Description

The Status Register can be written to after a Write

Enable command, WEL=1.(Default)

WP#=0, the Status Register locked and cannot be

written until the next power-up.

WP#=1, the Status Register is unlocked and can be

written to after a Write Enable command, WEL=1.

Status Register is protected and cannot be written to

again until the next Power-Down, Power-Up cycle.

Status Register is permanently protected and cannot

be written to.

0

1

0

1

0

1

X

0

Software Protected

Hardware Protected

1

Hardware Unprotected

Power Supply Lock-

Down(1)(2)

X

1

One-Time Program(2)

Notes:

1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.

2. This feature is available on special order.

VER 1.1

11

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

QE bit.

The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad

operation. When the QE bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE bit

is set to 1, the Quad IO2 and IO3 pins are enabled. (The QE bit should never be set to 1 during standard

SPI or Dual SPI operation if the WP# or HOLD# pins are tied directly to the power supply or ground).

LB1,LB0, bits.

The LB1, LB0, bits are non-volatile One Time Program (OTP) bits in Status Register (S11-S10) that

provide the write protect control and status to the Security Registers. The default state of LB1-LB0 are0,

the security egisters are unlocked. The LB1-LB0 bits can be set to 1 individually using the Write Register

instruction. The LB1-LB0 bits are One Time Programmable, once its set to 1, 2 pages of Security

Registers will become read-only permanently, and the other 2 pages of Security Registers cannot be

erased.

CMP bit.

The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction with the

BP4-BP0 bits to provide more flexibility for the array protection. Please see the Status registers Memory

Protection table for details. The default setting is CMP=0.

WPS

The WPS Bit is used to select which Write Protect scheme should be used. When WPS=0, the device will

use the combination of CMP, BP (4:0) bits to protect a specific area of the memory array. When WPS=1,

the device will utilize the Individual Block Locks to protect any individual sector or blocks. The default

value for all Individual Block Lock bits is 1 upon device power on or after reset.

HOLD/RST

The HOLD/RST bit is used to determine whether HOLD# or RESET# function should be implemented on

the hardware pin for 8-pin packages. When HOLD/RST=0, the pin acts as HOLD#, When the

HOLD/RST=1, the pin acts as RESET#. However, the HOLD# or RESET# function are only available

when QE=0, If QE=1, The HOLD# and RESET# functions are disabled, the pin acts as dedicated data I/O

pin.

Commands Description

All commands, addresses and data are shifted in and out of the device, beginning with the most

significant bit on the first rising edge of SCLK after CS# is driven low. Then, the one-byte command code

must be shifted in to the device, most significant bit first on SI, each bit being latched on the rising edges

of SCLK.

VER 1.1

12

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

See Table2, every command sequence starts with a one-byte command code. Depending on the

command, this might be followed by address bytes, or by data bytes, or by both or none. CS# must be

driven high after the last bit of the command sequence has been shifted in. For the command of Read,

Fast Read, Read Status Register, and Read Device ID, the shifted-in command sequence is followed by a

data-out sequence. CS# can be driven high after any bit of the data-out sequence is being shifted out.

For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write

Enable, Write Disable, CS# must be driven high exactly at a byte boundary, otherwise the command is

rejected. That is CS# must driven high when the number of clock pulses after CS# being driven low is an

exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will

happen and WEL will not be reset.

Table2. Commands

Command Name Byte1

Byte2

Byte3

Byte4

Byte5

Byte6

n-Bytes

Write Enable

06H

50H

Write Enable for

Volatile Status

Register

Write Disable

04H

05H

Read Status

Register

(S7-S0)

(S15-S8)

(S7-S0)

(continuous)

Read Status

Register-1

Write Status

Register

35H

01H

(S15-S8)

Read Data

Fast Read

03H

0BH

A23-A16

A15-A8

A7-A0

(D7-D0) (Next byte) (continuous)

dummy

(D7-D0) (continuous)

(D7-D0)(1) (continuous)

Dual Output Fast

Read

3BH

A23-A16

A23-A8(2)

A23-A16

A15-A8

A7-A0

(D7-D0)(1)

A7-A0

Dual I/O Fast Read BBH

(continuous)

M7-M0(2)

Quad Output Fast

6BH

A15-A8

dummy

(D7-D0)(3) (continuous)

Read

VER 1.1

13

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

A23-A0

Quad I/O Fast Read EBH

Dummy(5) (D7-D0)(3)

Dummy(6) (D7-D0)(3)

(continuous)

M7-M0(4)

A23-A0

Quad I/O Word Fast

E7H

Read

M7-M0(4)

Continuous Read

FFH

Reset

Page Program

02H

32H

A23-A16

A15-A8

A7-A0

(D7-D0) (Next byte)

(D7-D0)(3)

Quad Page

Program

Sector Erase

20H

52H

A23-A16

A15-A8

A7-A0

Block Erase(32KB)

Block Erase(64KB) D8H

Chip Erase

Enable QPI

C7/60H

38H

Set Burst with Wrap 77H

dummy

W6-W4

Deep Power-Down

B9H

ABH

Release From Deep

Power-Down, And

Read Device ID

Release From Deep

Power-Down

(DID7-DID0

)

(continuous)

ABH

90H

92H

94H

Manufacturer/Devic

e ID

dummy

A23-A8

dummy

00H

(M7- M0)

(ID7-ID0) (continuous)

(continuous)

Manufacturer/Devic

e ID by Dual I/O

Manufacturer/Devic

e ID by Quad I/O

A7-A0,

M[7:0]

(M7-M0 )

(ID7-ID0)

(M7-M0 )

(ID7-ID0)

A23-A0,

M[7:0]

dummy

A15-A8

Read Serial Flash

Discoverable

Parameters

5AH

A23-A16

A7-A0

dummy

(D7-D0) (continuous)

VER 1.1

14

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Read Unique ID

5AH

9FH

00H

01H

94H

dummy

(D7-D0) (continuous)

(continuous)

Read Identification

(M7- M0) (ID15-ID8) (ID7-ID0)

Erase Security

Register(8)

44H

42H

48H

A23-A16

A15-A8

A7-A0

Program Security

Register(8)

(D7-D0) (Next byte)

dummy (D7-D0)

Read Security

Register(8)

Enable Reset

Reset

66H

99H

High Performance

Mode

A3H

36H

39H

dummy

A15-A8

dummy

A7-A0

Individual Block

Lock

A23-A16

Individual Block

A23-A16

A15-A8

A7-A0

I

Un- lock

Read Block Lock

Global Block Lock

3DH

7EH

Global Block

Unlock

98H

VER 1.1

15

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Table2a. Commands (QPI)

Command Name

Clock Number

Write Enable

Byte1

(0,1)

06H

Byte2

Byte3

Byte4

Byte5

Byte6

(6,7)

(10,11)

(2,3)

(4,5)

(8,9)

Write Enable for Volatile

Status Register

50H

Write Disable

Read Status Register

Read Status Register-1

Write Status Register

Page Program

04H

05H

(S7-S0)

35H

(S15-S8)

01H

(S7-S0) (S15-S8)

02H

A23-A16

A15-A8

A7-A0

(D7-D0)

(Next byte)

Sector Erase

20H

Block Erase(32KB)

Block Erase(64KB)

Chip Erase

52H

D8H

C7/60H

B9H

C0H

0BH

0CH

Deep Power-Down

Set Read Parameters

Fast Read

P7-P0

A23-A16

A15-A8

A7-A0

dummy

(D7-D0)

Burst Read with Wrap

dummy

(5)

(D7-D0)

(3)

Quad I/O Fast Read

EBH

A23-A0

Release from Deep Power-

Down, And Read Device

ID(10)

ABH

90H

dummy

dummy dummy * N (ID7-ID0)

MID7~MID

dummyx

2

(ID7-ID0)

Manufacturer/Device ID(11)

00H

dummy * N

0

Disable QPI

FFH

66H

Enable Reset

Reset

99H

A3H

36H

39H

3DH

7EH

98H

High Performance Mode

Individual Block Lock

Individual Block Unlock

Read Block Lock

dummy

A23-A16

dummy

A15-A8

dummy

A7-A0

Global Block Lock

Global Block Unlock

Read Serial Flash Discovera

ble Parameter

5AH

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Notes:

1. Dual Output data

IO0 = (D6, D4, D2, D0)

IO1 = (D7, D5, D3, D1)

2. Dual Input Address

IO0 = A22, A20, A18, A16, A14, A12, A10, A8,A6, A4, A2, A0, M6, M4, M2, M0

IO1 = A23, A21, A19, A17, A15, A13, A11, A9,A7, A5, A3, A1, M7, M5, M3, M1

3. Quad Output Data

IO0 = (D4, D0, …..)

IO1 = (D5, D1, …..)

IO2 = (D6, D2, …..)

IO3 = (D7, D3, …..)

4. Quad Input Address

IO0 = A20, A16, A12, A8, A4, A0, M4, M0

IO1 = A21, A17, A13, A9, A5, A1, M5, M1

IO2 = A22, A18, A14, A10, A6, A2, M6, M2

IO3 = A23, A19, A15, A11, A7, A3, M7, M3

5. Quad I/O Fast Read Data

IO0 = (x, x, x, x, D4, D0,…)

IO1 = (x, x, x, x, D5, D1,…)

IO2 = (x, x, x, x, D6, D2,…)

IO3 = (x, x, x, x, D7, D3,…)

6. Quad I/O Word Fast Read Data

IO0 = (x, x, D4, D0,…)

IO1 = (x, x, D5, D1,…)

IO2 = (x, x, D6, D2,…)

IO3 = (x, x, D7, D3,…)

7. Quad I/O Word Fast Read Data: the lowest address bit must be 0

8. Security Registers Address :

Security Register1: A23-A16=00H, A15-A8=00H, A7-A0= Byte Address

Security Register1: A23-A16=00H, A15-A8=01H, A7-A0= Byte Address;

Security Register2: A23-A16=00H, A15-A8=02H, A7-A0= Byte Address;

Security Register3: A23-A16=00H, A15-A8=03H, A7-A0= Byte Address.

9. QPI Command, Address, Data input/output format:

CLK# 0 1 2 3 4 5 6 7 8 9 10 11

IO0 = C4, C0, A20, A16, A12, A8, A4, A0, D4, D0, D4, D0

IO1 = C5, C1, A21, A17, A13, A9, A5, A1, D5, D1, D5, D1

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Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

IO2 = C6, C2, A22, A18, A14, A10, A6, A2, D6, D2, D6, D2

IO3 = C7, C3, A23, A19, A15, A11, A7, A3, D7, D3, D7, D4

10. QPI mode: Release from Deep Power-Down, And Read Device ID (ABH)

N dummy cycles should be inserted before ID read cycle, refer to C0H command

11. QPI mode: Manufacturer/Device ID (90H)

N dummy cycles should be inserted before ID read cycle, refer to C0H command

ID Definitions

Operation Code

M7-M0

0B

ID15-ID8

40

ID7-ID0

18

9FH

90H

ABH

0B

17

Write Enable (WREN) (06H)

The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable

Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip

Erase (CE) and Write Status Register (WRSR) command. The Write Enable (WREN) command

sequence: CS# goes low→sending the Write Enable command→CS# goes high.

Figure1. Write Enable Sequence Diagram

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Figure1a. Write Enable Sequence Diagram (QPI)

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Write Enable for Volatile Status Register (50H )

The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to

change the system configuration and memory protection schemes quickly without waiting for the typical

non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. The Write

Enable for Volatile Status Register command must be issued prior to a Write Status Register command

and any other commands can't be inserted between them. Otherwise, Write Enable for Volatile Status

Register will be cleared. The Write Enable for Volatile Status Register command will not set the Write

Enable Latch bit, it is only valid for the Write Status Register command to change the volatile Status

Register bit values.

Figure2. Write Enable for Volatile Status Register Sequence Diagram

Figure2a. Write Enable for Volatile Status Register Sequence Diagram (QPI)

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Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Write Disable (WRDI) (04H)

The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable

command sequence: CS# goes low→sending Write Disable command→CS# goes high. The WEL bit is

reset by following condition: Power-up and upon completion of the Write Status Register, Page Program,

Sector Erase, Block Erase and Chip Erase commands.

Figure3. Write Disable Sequence Diagram

Figure3a. Write Disable Sequence Diagram (QPI)

Read Status Register (RDSR) (05H or 35H)

The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may

be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one

of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending

a new command to the device. It is also possible to read the Status Register continuously. For command

code “05H”, the SO will output Status Register bits S7~S0. The command code “35H”, the SO will output

Status Register bits S15~S8.

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Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure4. Read Status Register Sequence Diagram

Figure4a. Read Status Register Sequence Diagram (QPI)

Write Status Register (WRSR) (01H)

The Write Status Register (WRSR) command allows new values to be written to the Status Register.

Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After

the Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable

Latch (WEL).

The Write Status Register (WRSR) command has no effect on S15, S13, S12, S11, S1 and S0 of the

Status Register. CS# must be driven high after the eighth bit of the data byte has been latched in. If not,

the Write Status Register (WRSR) command is not executed. If CS# is driven high after eighth bit of the

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Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

data byte, the CMP and QE bit will be cleared to 0. As soon as CS# is driven high, the self-timed Write

Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in

progress, the Status Register can still be read to check the value of the Write In Progress (WIP) bit. The

Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is

completed. When the cycle is completed, the Write Enable Latch (WEL) is reset.

The Write Status Register (WRSR) command allows the user to change the values of the Block Protect

(BP4, BP3,BP2, BP1, and BP0) bits, to define the size of the area that is to be treated as read-only, as

defined in Table1. The Write Status Register (WRSR) command also allows the user to set or reset the

Status Register Protect (SRP) bit in accordance with the Write Protect (WP#) signal. The Status Register

Protect (SRP) bit and Write Protect (WP#) signal allow the device to be put in the Hardware Protected

Mode. The Write Status Register (WRSR) command is not executed once the Hardware Protected Mode

is entered.

Figure5. Write Status Register Sequence Diagram

Figure5a. Write Status Register Sequence Diagram (QPI)

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Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Read Data Bytes (READ) (03H)

The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being

latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO,

each bit being shifted out, at a Max frequency fR, during the falling edge of SCLK. The first byte

addressed can be at any location. The address is automatically incremented to the next higher address

after each byte of data is shifted out. Therefore, the whole memory can be read with a single Read Data

Bytes (READ) command. During an Erase, Program or Write cycle, Read Data Byte (READ) command

will be rejected without affecting the cycle in progress.

Figure6. Read Data Bytes Sequence Diagram

Read Data Bytes At Higher Speed (Fast Read)(0BH)

The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed

by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK.

Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max

frequency f , during the falling edge of SCLK. The first byte address can be at any location. The address

C

is automatically incremented to the next higher address after each byte of data is shifted out.

Figure7. Read Data Bytes at Higher Speed Sequence Diagram

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Fast Read (0BH) in QPI Mode

The Fast Read command is also supported in QPI mode. In QPI mode, the number of dummy clocks is

configured by the “Set Read Parameters (C0H)” command to accommodate a wide range application with

different needs for either maximum Fast Read frequency or minimum data access latency. Depending on

the Read Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as either 4/6/8.

When the dummy cycle is configured to 4, addr [0] input must be 0.

Figure7a. Read Data Bytes at Higher Speed Sequence Diagram

Dual Output Fast Read (3BH )

The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each

bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per

clock cycle from SI and SO. The command sequence is shown in Figure 8. The first byte addressed can

be at any location. The address is automatically incremented to the next address after each byte of data is

shifted out.

Figure8. Dual Output Fast Read Sequence Diagram

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Quad Output Fast Read (6BH )

The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, each

bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per

clock cycle from IO3, IO2, IO1 and IO0. The command sequence is shown in Figure 9. The first byte

addressed can be at any location. The address is automatically incremented to the next address after

each byte of data is shifted out.

Figure9. Quad Output Fast Read Sequence Diagram

Dual I/O Fast Read(BBH)

The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the

capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI

and SO, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted

out 2-bit per clock cycle from SI and SO. The command sequence is shown in Figure 10. The first byte

addressed can be at any location. The address is automatically incremented to the next address after

each byte of data is shifted out.

Dual I/O Fast Read with “Continuous Read Mode”

The Dual I/O Fast Read command can further reduce command overhead through setting the

“Continuous Read Mode” bits (M7- 0) after the input 3-byte address (A23-A0). If the “Continuous Read

Mode” bits (M5- 4) =(1, 0), then the next Dual I/O Fast Read command (after CS# is raised and then

lowered) does not require the BBH command code. The command sequence is shown in figure 10a. If the

“Continuous Read Mode” bits (M5- 4) do not equal (1, 0), the next command requires the first BBH

command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be

used to reset (M5- 4) before issuing normal command.

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure10. Dual I/O Fast Read Sequence Diagram (M5-4≠(1, 0))

Figure11. Dual I/O Fast Read Sequence Diagram (M5-4=(1, 0))

Quad I/O Fast Read(EBH)

The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability

to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bits per

clock by IO0, IO1, IO3, IO4, each bit being latched in during the rising edge of SCLK, then the memory

contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2, IO3. The command sequence is shown in

Figure 12. The first byte addressed can be at any location. The address is automatically incremented to

the next address after each byte of data is shifted out. The Quad Enable bit (QE) of Status Register (S9)

must be set to enable for the Quad I/O Fast read command.

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Quad I/O Fast Read with “Continuous Read Mode”

The Quad I/O Fast Read command can further reduce command overhead through setting the

“Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read

Mode” bits (M5- 4) =(1, 0), then the next Quad I/O Fast Read command (after CS# is raised and then

lowered) does not re- quire the EBH command code. The command sequence is shown in Figure 13. If

the “Continuous Read Mode” (M5- 4) do not equal (1, 0), the next command requires the first EBH

command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be

used to reset (M5- 4) before issuing normal command.

Figure12.Quad I/O Fast Read Sequence Diagram (M5-4≠(1, 0))

Figure13.Quad I/O Fast Read Sequence Diagram (M5-4=(1, 0))

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Quad I/O Fast Read with ““8/16/32/64-Byte Wrap Around” in Standard SPI mode

The Quad I/O Fast Read command can be used to access a specific portion within a page by issuing “Set

Burst with Wrap” (77H) commands prior to EBH. The “Set Burst with Wrap” (77H) command can either

enable or disable the “Wrap Around” feature for the following EBH commands. When “Wrap Around” is

enabled, the data being accessed can be limited to either an 8/16/32/64-byte section of a 256-byte page.

The output data starts at the initial address specified in the command, once it reaches the ending

boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary

automatically until CS# is pulled hight to terminate the command.

The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then

fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read

commands. The “Set Burst with Wrap” command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is

used to enable or disable the “Wrap Around” operation while W6-W5 is used to specify the length of the

wrap around section within a page.

Quad I/O Fast Read (EBH) in QPI mode

The Quad I/O Fast Read command is also supported in QPI mode. See Figure12b. In QPI mode, the

number of dummy clocks is configured by the “Set Read Parameters (C0H)” command to accommodate a

wide range application with different needs for either maximum Fast Read frequency or minimum data

access latency.

Depending on the Read Parameter Bits P[5:4] setting, the number of dummy clocks can be configured as

either 4/6/8. When the dummy cycle is configured to 4, addr[0] input must be 0. In QPI mode, the

“Continuous Read Mode” bits M7-M0 are also considered as dummy clocks. “Continuous Read Mode”

feature is also available in QPI mode for Quad I/O Fast Read command. “Wrap Around” feature is not

available in QPI mode for Quad I/O Fast Read command. To perform a read operation with fixed data

length wrap around in QPI mode, a dedicated “Burst Read with Wrap” (0CH) command must be used.

Figure13a.Quad I/O Fast Read Sequence Diagram (M5-4=(1, 0)QPI)

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Quad I/O Word Fast Read(E7H)

The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the

lowest address bit (A0) must equal 0 and only 2-dummy clock. The command sequence is shown in

followed Figure 14. The first byte addressed can be at any location. The address is automatically

incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of

Status Register (S9) must be set to enable for the Quad I/O Word Fast read command.

Quad I/O Word Fast Read with “Continuous Read Mode”

The Quad I/O Word Fast Read command can further reduce command overhead through setting the

“Continuous Read Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read

Mode” bits (M5- 4) =(1, 0), then the next Quad I/O Word Fast Read command (after CS# is raised and

then lowered) does not require the E7H command code. The command sequence is shown in followed

Figure 14a. If the “Continuous Read Mode” bits (M5- 4) do not equal (1, 0), the next command requires

the first E7H command code, thus returning to normal operation. A “Continuous Read Mode” Reset

command can be used to reset (M7-0) before issuing normal command.

Figure14.Quad I/O Word Fast Read Sequence Diagram (M5-4≠(1, 0))

Figure14a.Quad I/O Word Fast Read Sequence Diagram (M5-4= (1, 0))

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Quad I/O Word Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode

The Quad I/O Word Fast Read command can be used to access a specific portion within a page by

issuing “Set Burst with Wrap” (77H) commands prior to E7H. The “Set Burst with Wrap” (77H) command

can either enable or disable the “Wrap Around” feature for the following E7H commands. When “Wrap

Around” is enabled, the data being accessed can be limited to either an 8/16/32/64-byte section of a

256-byte page. The output data starts at the initial address specified in the command, once it reaches the

ending boundary of the 8/16/32/64- byte section, the output will wrap around the beginning boundary

automatically until CS# is pulled high to terminate the command. The Burst with Wrap feature allows

applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a

fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap”

command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap

Around” operation while W6-W5 is used to specify the length of the wrap around section within a page.

Set Burst with Wrap (77H)

The Set Burst with Wrap command is used in conjunction with “Quad I/O Fast Read” and “Quad I/O Word

Fast Read” command to access a fixed length of 8/16/32/64-byte section within a 256-byte page, in

standard SPI mode. The Set Burst with Wrap command sequence: CS# goes low →Send Set Burst with

Wrap command →Send 24 dummy bits →Send 8 bits “Wrap bits” →CS# goes high

W4=0

W4=1(default)

W6,W5

Wrap Around

Wrap Length

8-byte

Wrap Around

Wrap Length

N/A

0,0

0,1

1,0

1,1

Yes

No

16-byte

N/A

32-byte

N/A

64-byte

N/A

If the W6-W4 bits are set by the Set Burst with Wrap command, all the following “Quad I/O Fast Read”

and “Quad I/O Word Fast Read” command will use the W6-W4 setting to access the 8/16/32/64-byte

section within any page. To exit the “Wrap Around” function and return to normal read operation, another

Set Burst with Wrap command should be issued to set W4=1. In QPI mode, the “Burst Read with Wrap

(0CH)” command should be used to perform the Read Operation with “Wrap Around” feature. The Wrap

Length set by W5-W6 in Standard SPI mode is still valid in QPI mode and can also be re-configured by

“Set Read Parameters (C0H) command.

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Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure15.Set Burst With Wrap Sequence Diagram

Page Program (PP) (02H)

The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command

must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page

Program command.

The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three

address bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all

zero, all transmitted data that goes beyond the end of the current page are programmed from the start

address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must

be driven low for the entire duration of the sequence. The Page Program command sequence: CS# goes

low →sending Page Program command →3-byte address on SI →at least 1 byte data on SI →CS# goes

high. The command sequence is shown in Figure14. If more than 256 bytes are sent to the device,

previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed

correctly within the same page. If less than 256 data bytes are sent to device, they are correctly

programmed at the requested addresses without having any effects on the other bytes of the same page.

CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise the Page

Program (PP) command is not executed.

As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated.

While the Page Program cycle is in progress, the Status Register may be read to check the value of the

Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle,

and is 0 when it is completed. As some unspecified time before the cycle is completed, the Write Enable

Latch (WEL) bit is reset.

A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3,

BP2, BP1, BP0) is not executed.

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128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure16. Page Program Sequence Diagram

Figure16a. Page Program Sequence Diagram (QPI)

Quad Page Program (QPP) (32H)

The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2, and

IO3. To use Quad Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write

Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit

before sending the Page Program command. The Quad Page Program command is entered by driving

CS# Low, followed by the command code (32H), three address bytes and at least one data byte on IO

pins.

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128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

The command sequence is shown in Figure 17. If more than 256 bytes are sent to the device, previously

latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within

the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the

requested ad- dresses without having any effects on the other bytes of the same page. CS# must be

driven high after the eighth bit of the last data byte has been latched in; otherwise the Quad Page

Program command is not executed.

As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is

initiated. While the Quad Page Program cycle is in progress, the Status Register may be read to check

the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed

Quad Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is

completed, the Write Enable Latch (WEL) bit is reset.

A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3,

BP2, BP1, BP0) will not be executed.

Figure17. Quad Page Program Sequence Diagram

Sector Erase (SE) (20H)

The Sector Erase (SE) command is for erasing the all data of the chosen sector. A Write Enable (WREN)

command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase

(SE) command is entered by driving CS# low, followed by the command code, and 3-address byte on SI.

Any address inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven

low for the entire duration of the sequence.

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128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

The Sector Erase command sequence: CS# goes low→sending Sector Erase command→3-byte address

on SI→CS# goes high. The command sequence is shown in Figure18. CS# must be driven high after the

eighth bit of the last address byte has been latched in; otherwise the Sector Erase (SE) command is not

executed. As soon as CS# is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is

initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value

of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase

cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write

Enable Latch (WEL) bit is reset. A Sector Erase( (SE) command applied to a sector which is protected by

the Block Protect(BP4, BP3,BP2, BP1, and BP0) bit (see Table1 &1.1) will not be executed. Note: Power

disruption during erase operation will cause incomplete erase, thus recommend to perform a re-erase

once power resume.

Figure18. Sector Erase Sequence Diagram

Figure19. Sector Erase Sequence Diagram (QPI)

32KB Block Erase (BE) (52H)

The 32KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable

(WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The

32KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and

three address bytes on SI. Any address inside the block is a valid address for the 32KB Block Erase (BE)

command. CS# must be driven low for the entire duration of the sequence.

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Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

The 32KB Block Erase command sequence: CS# goes low→sending 32KB Block Erase command→

3-byte address on SI→CS# goes high. The command sequence is shown in Figure20. CS# must be

driven high after the eighth bit of the last address byte has been latched in; otherwise the 32KB Block

Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle

(whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be

read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the

self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is

completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a

block which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table1 & 1.1) will not

be executed. Note: Power disruption during erase operation will cause incomplete erase, thus

recommend to perform a re-erase once power resume.

Figure20. 32KB Block Erase Sequence Diagram

Figure20a. 32KB Block Erase Sequence Diagram (QPI)

64KB Block Erase (BE) (D8H)

The 64KB Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable

(WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit. The

64KB Block Erase (BE) command is entered by driving CS# low, followed by the command code, and

three address bytes on SI. Any address inside the block is a valid address for the 64KB Block Erase (BE)

command. CS# must be driven low for the entire duration of the sequence.

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

The 64KB Block Erase command sequence: CS# goes low→sending 64KB Block Erase command→

3-byte address on SI→CS# goes high. The command sequence is shown in Figure21. CS# must be

driven high after the eighth bit of the last address byte has been latched in; otherwise the 64KB Block

Erase (BE) command is not executed. As soon as CS# is driven high, the self-timed Block Erase cycle

(whose duration is tBE) is initiated. While the Block Erase cycle is in progress, the Status Register may be

read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the

self-timed Block Erase cycle, and is 0 when it is completed. Write Enable Latch (WEL) bit is reset t. A

64KB Block Erase (BE) commands applied to a block which is protected by the Block Protect (BP4,

BP3,BP2, BP1, BP0) bits (see Table1 & 1.1) will not be executed. Note: Power disruption during erase

operation will cause incomplete erase, thus recommend to perform a re-erase once power resume.

Figure21. 64KB Block Erase Sequence Diagram

Figure21a. 64KB Block Erase Sequence Diagram (QPI)

Chip Erase (CE) (60/C7H)

The Chip Erase (CE) command is for erasing the all data of the chip. A Write Enable (WREN) command

must previously have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE)

command is entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS#

must be driven Low for the entire duration of the sequence.

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

The Chip Erase command sequence: CS# goes low→sending Chip Erase command→CS# goes high.

The command sequence is shown in Figure22. CS# must be driven high after the eighth bit of the

command code has been latch in, otherwise the Chip Erase command is not executed. As soon as CS# is

driven high, the self-timed Chip Erase cycle (whose duration is t_CE) is initiated. While the Chip Erase cycle

is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The

Write In Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. At

some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip

Erase (CE) command is executed if the Block protected by (BP2, BP1, BP0) bits. The Chip Erase(CE)

command is ignored if one or more sectors are protected. Note: Power disruption during erase operation

will cause incomplete erase, thus recommend to perform a re-erase once power resume.

Figure22. Chip Erase Sequence Diagram

Figure22a. Chip Erase Sequence Diagram (QPI)

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Deep Power-Down (DP) (B9H)

Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest

consumption mode (the Deep Power-Down Mode). It can also be used as an extra software protection

mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program

and Erase commands. Driving CS# high deselects the device, and puts the device in the Standby Mode (if

there is no internal cycle currently in progress). But this mode is not the Deep Power-Down Mode. The

Deep Power-Down Mode can only be entered by executing the Deep Power-Down (DP) command. Once

the device has entered the Deep Power- Down Mode, all commands are ignored except the Release from

Deep Power-Down and Read Device ID (RDI) command. This releases the device from this mode. The

Release from Deep Power-Down and Read Device ID (RDI) command also allows the Device ID of the

device to be output on SO.

The Deep Power-Down Mode automatically stops at Power-Down, and the device always Power-Up in

the Standby Mode. The Deep Power-Down (DP) command is entered by driving CS# low, followed by the

command code on SI. CS# must be driven low for the entire duration of the sequence.

The Deep Power-Down command sequence: CS# goes low→sending Deep Power-Down command→

CS# goes high. The command sequence is shown in Figure 23. CS# must be driven high after the eighth

bit of the command code has been latched in; otherwise the Deep Power-Down (DP) command is not

executed. As soon as CS# is driven high, it requires a delay of tDP before the supply current is reduced to

ICC2 and the Deep Power- Down Mode is entered. Any Deep Power-Down (DP) command, while an

Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in

progress.

Figure23. Deep Power-Down Sequence Diagram

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure23a. Release Power-Down Sequence Diagram (QPI)

Release from Deep Power-Down and Read Device ID (RDI) (ABH)

The Release from Power-Down and Read/Device ID command is a multi-purpose command. It can be

used to release the device from the Power-Down state or obtain the devices electronic identification (ID)

number. To release the device from the Power-Down state, the command is issued by driving the CS# pin

low, shifting the instruction code “ABH” and driving CS# high as shown in Figure24. Release from

Power-Down will take the time duration of tRES1 (See AC Characteristics) before the device will resume

normal operation and other command are accepted. The CS# pin must remain high during the tRES1

time duration.

When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by

driving the CS# pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID

bits are then shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in

Figure24a. The Device ID value for the ACE25AA128G is listed in Manufacturer and Device Identification

table. The Device ID can be read continuously. The command is completed by driving CS# high.

When used to release the device from the Power-Down state and obtain the Device ID, the command is

the same as previously described, and shown in Figure 24b, except that after CS# is driven high it must

remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will

resume normal operation and other command will be accepted. If the Release from Power-Down/Device

ID command is issued while an Erase, Program or Write cycle is in process (when WIP equal 1) the

command is ignored and will not have any effect on the current cycle.

VER 1.1

39

Figure24. Deep Power-Down Sequence Diagram

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure24a. Release Power-Down Sequence Diagram (QPI)

Figure24b. Release Power-Down /Read Device ID Sequence Diagram

Figure24c. Release Power-Down /Read Device ID Sequence Diagram (QPI)

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Read Manufacture ID/ Device ID (REMS) (90H)

The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device

ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID. The

command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit

address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the

falling edge of SCLK with most significant bit (MSB) first is shown in Figure 25. If the 24-bit address is

initially set to 000001H, the Device ID will be read first. In QPI mode the dummy cycles can be configured

by C0H command. When the dummy cycle is configured to 4, addr [0] input must be 0.

Figure25. Read Manufacture ID/ Device ID Sequence Diagram

Figure25a. Read Manufacture ID/ Device ID Sequence Diagram (QPI)

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Read Manufacture ID/ Device ID Dual I/O (92H)

The Read Manufacturer/Device ID Dual I/O command is an alternative to the Release from Power-Down /

Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID

by dual I/O.

The command is initiated by driving the CS# pin low and shifting the command code “92H” followed by a

24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out

on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure 26 If the 24-bit address

is initially set to 000001H, the Device ID will be read first.

Figure26. Read Manufacture ID/ Device ID Dual I/O Sequence Diagram

Read Manufacture ID/ Device ID Quad I/O (94H)

The Read Manufacturer/Device ID Quad I/O command is an alternative to the Release from Power-Down

/ Device ID command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID

by quad I/O. The command is initiated by driving the CS# pin low and shifting the command code “94H”

followed by a 24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID

are shifted out on the falling edge of SCLK with most significant bit (MSB) first is shown in Figure 27. If the

24-bit address is initially set to 000001H, the Device ID will be read first.

Figure27. Read Manufacture ID/ Device ID Quad I/O Sequence Diagram

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Read Identification (RDID) (9FH)

The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed

by two bytes of device identification. The device identification indicates the memory type in the first byte,

and the memory capacity of the device in the second byte. Any Read Identification (RDID) command

while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in

progress. The Read identification (RDID) command should not be issued while the device is in Deep

Power-Down Mode.

The device is first selected by driving CS# to low. Then, the 8-bit command code for the command is

shifted in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on

Serial Data Output, each bit being shifted out during the falling edge of Serial Clock. The command

sequence is shown in Figure28. The Read Identification (RDID) command is terminated by driving CS# to

high at any time during data output. When CS# is driven high, the device is put in the Standby Mode.

Once in the Standby Mode, the device waits to be selected, so that it can receive, decode and execute

commands.

Figure28. Read Identification ID Sequence Diagram

High Performance Mode (HPM) (A3H)

The High Speed Mode (HSM) command must be executed prior to Dual or Quad I/O commands when

operating at high frequencies (see fR and fC1 in AC Electrical Characteristics). This command allows

pre-charging of internal charge pumps so the voltages required for accessing the flash memory array are

readily available. The command sequence: CS# goes low Sending A3H command→Sending 3-dummy

byte→CS# goes high. After the HSM command is executed, the device will maintain a slightly higher

standby current (Icc9) than standard SPI operation. The Write Enable command (06H) can be used to

return to standard SPI standby current (ICC1). In addition, DEEP-Power-Down command (B9H) will

release the device from HSM mode to deep power down state.

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure29. High Performance Mode Sequence Diagram

Figure29a. High Speed Mode Sequence Diagram(QPI)

Individual Block/Sector Lock (36H)/Unlock (39H)/Read (3DH)

The individual block/sector lock provides an alternative way to protect the memory array from adverse

Erase/Program. In order to use the Individual Block/Sector Locks, the WPS bit in Status Register-3 must

be set to 1. If WPS=0, the write protection will be determined by the combination of CMP, BP (4:0) bits in

the Status Register.

The Individual Block/Sector Lock bits are volatile bits. The default values after device power up or after a

Reset are1, so the entire memory array is being protected.

The individual Block/Sector Lock command (36H) sequence: CS# goes low SI: Sending individual

Block/Sector Lock command SI: Sending 24bits individual Block/Sector Lock Address CS# goes high.

The command sequence is shown in Figure 30.

The individual Block/Sector Unlock command (39H) sequence: CS# goes low SI: Sending individual

Block/Sector Unlock command SI: Sending 24bits individual Block/Sector Lock Address CS# goes high.

The com- mand sequence is shown in Figure 31.

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

The Read individual Block/Sector lock command (3DH) sequence: CS# goes low SI: Sending Read

individual Block/Sector Lock command SI: Sending 24bits individual Block/Sector Lock Address SO: The

Block/Sector Lock Bit will out CS# goes high. If the least significant bit(LSB) is1, the corresponding

block/sector is locked, if the LSB is 0, the corresponding block/sector is unlocked, Erase/Program

operation can be performed. The command sequence is shown in Figure 32.

Figure30. Individual Block/Sector Lock command Sequence Diagram

Figure30a. Individual Block/Sector Lock command Sequence Diagram(QPI)

Figure31. Individual Block/Sector Unlock command Sequence Diagram

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure31a. Individual Block/Sector Unlock command Sequence Diagram (QPI)

Figure32. Read Individual Block/Sector lock command Sequence Diagram

Figure32a. Read Individual Block/Sector lock command Sequence Diagram(QPI)

Global Block/Sector Lock (7EH) or Unlock (98H)

All Block/Sector Lock bits can be set to 1 by the Global Block/Sector Lock command, or can set to 0 by

the Global Block/Sector Unlock command.

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

The Global Block/Sector Lock command (7EH) sequence: CS# goes low SI: Sending Global Block/Sector

Lock command CS# goes high. The command sequence is shown in Figure 33.

The Global Block/Sector Unlock command (98H) sequence: CS# goes low SI: Sending Global

Block/Sector lock command CS# goes high. The command sequence is shown in Figure 34.

Figure33. The Global Block/Sector Lock Sequence Diagram

Figure33a. The Global Block/Sector Lock Sequence Diagram(QPI)

Figure34. The Global Block/Sector Unlock Sequence Diagram

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure34a. The Global Block/Sector Unlock Sequence Diagram(QPI)

Erase Security Registers (44H)

The ACE25AA128G provides four 256-byte Security Registers which only erased all at once but able to

program individually. These registers may be used by the system manufacturers to store security and

other important information separately from the main memory array.

The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable

(WREN) command must previously have been executed to set the Write Enable Latch (WEL) bit.

The Erase Security Registers command sequence: CS# goes low→sending Erase Security Registers

Command→CS# goes high. The command sequence is shown in Figure 35. CS# must be driven high

after the eighth bit of the command code has been latched in, otherwise the Erase Security Registers

command is not executed. As soon as CS# is driven high, the self-timed Erase Security Registers cycle

(whose duration is tSE) is initiated. While the Erase Security Registers cycle is in progress, the Status

Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP)

bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed.

At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The

Security Registers Lock Bit (LB1,LB0) in the Status Register can be used to OTP protect the security

registers. Once the LB bit is set to 1, the Erase Security Registers will be permanently locked; the Erase

Security Registers command will be ignored.

A23-A16

A15-A10

000000

Address

A9-A0

00000000

Security Registers

Don’Care

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure35. Erase Security Registers command Sequence Diagram

Program Security Registers (42H)

The Program Security Registers command is similar to the Page Program command. It allows from 1 to

256 bytes Security Registers data to be programmed. A Write Enable (WREN) command must previously

have been executed to set the Write Enable Latch (WEL) bit before sending the Program Security

Registers command. The Program Security Registers command is entered by driving CS# Low, followed

by the command code (42H), three address bytes and at least one data byte on SI. As soon as CS# is

driven high, the self-timed Program Security Registers cycle (whose duration is tPP) is initiated. While the

Program Security Registers cycle is in progress, the Status Register may be read to check the value of

the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Program

Security Registers cycle, and is 0 when it is completed. At some unspecified time before the cycle is

completed, the Write Enable Latch (WEL) bit is reset.

If the Security Registers Lock Bit (LB0) is set to 1, the Security Registers 1 will be permanently locked.

Program Security Registers 1command will be ignored. If the Security Registers Lock Bit 1 (LB1) is set to

1, the Security Registers 2 will be permanently locked. Program Security Registers 2command will be

ignored.

A15-A8

00H

Address

A23-A16

00H

A7-A0

Security Registers 0

Security Registers 1

Security Registers 2

Security Registers 3

Byte Address

00H

01H

00H

02H

00H

03H

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure36. Program Security Registers command Sequence Diagram

Read Security Registers (48H)

The Read Security Registers command is similar to Fast Read command. The command is followed by a

3- byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK.

Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max

frequency fC, during the falling edge of SCLK. The first byte addressed can be at any location. The

address is automatically incremented to the next address after each byte of data is shifted out. Once the

A9-A0 address reaches the last byte of the register (Byte 3FFH), it will reset to 000H, the command is

completed by driving CS# high.

Address

A23-A16

A15-A10

000000

A9-A0

Security Register

00000000

Address

Figure37. Read Security Registers Command Sequence Diagram

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Set Read Parameters (C0H)

In QPI mode the “Set Read Parameters (C0H)” command can be used to configure the number of dummy

clocks for “Fast Read (0BH)”, “Quad I/O Fast Read (EBH)” and “Burst Read with Wrap (0CH)” command,

and to configure the number of bytes of “Wrap Length” for the “Burst Read with Wrap (0CH)” command.

The “Wrap Length” is set by W5-6 bit in the “Set Burst with Wrap (77H)” command. This setting will

remain unchanged when the device is switched from Standard SPI mode to QPI mode

P5-P4

0 0

Dummy Clocks

Maximum Read Freq.

48MHz

P1-P0

0 0

Wrap Length

8-byte

4

6

8

0 1

48MHz

0 1

16-byte

1 0

54MHz

1 0

32-byte

1 1

72MHz

1 1

64-byte

Figure38. Set Read Parameters Command Sequence Diagram

Burst Read with Wrap (0CH)

The “Burst Read with Wrap (0CH)” command provides an alternative way to perform the read operation

with “Wrap Around” in QPI mode. This command is similar to the “Fast Read (0BH)” command in QPI

mode, except the addressing of the read operation will “Wrap Around” to the beginning boundary of the

“Wrap Around” once the ending boundary is reached. The “Wrap Length” and the number of dummy

clocks can be configured by the “Set Read Parameters (C0H)” command. When the dummy cycle is

configured to 4, addr[0] input must be 0.

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure39. Burst Read With Wrap Command Sequence Diagram

Enable QPI (38H)

The device support both Standard/Dual/Quad SPI and QPI mode. The “Enable QPI (38H)” command can

switch the device from SPI mode to QPI mode. See the command Table 2a for all support QPI commands.

In order to switch the device to QPI mode, the Quad Enable (QE) bit in Status Register-1 must be set to 1

first, and “Enable QPI (38H)” command must be issued. If the QE bit is 0, the “Enable QPI (38H)”

command will be ignored and the device will remain in SPI mode. When the device is switched from SPI

mode to QPI mode, the existing Write Enable Latch and Program/Erase Suspend status, and the Wrap

Length setting will remain unchanged.

Figure40. Enable QPI Mode Command Sequence Diagram

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Continuous Read Mode Reset (CRMR) (FFH)/ Disable QPI (FFH)/ Continuous Read Mode

Reset (CRMR) (FFH)

The Dual/Quad I/O Fast Read operations, “Continuous Read Mode” bits (M7-0) are implemented to

further reduce command overhead. By setting the (M7-0) to AXH, the next Dual/Quad I/O Fast Read

operations do not require the BBH/EBH/E7H command code.

Because the ACE25AA128G has no hardware reset pin, so if Continuous Read Mode bits are set to

“AXH”, the ACE25AA128G will not recognize any standard SPI commands. So Continuous Read Mode

Reset command will release the Continuous Read Mode from the “AXH” state and allow standard SPI

command to be recognized. The command sequence is show in Figure41.

Figure41. Continuous Read Mode Reset Sequence Diagram

Disable QPI (FFH)

To exit the QPI mode and return to Standard/Dual/Quad SPI mode, the “Disable QPI (FFH)” command

must be issued. When the device is switched from QPI mode to SPI mode, the existing Write Enable

Latch and Program/Erase Suspend status, and the Wrap Length setting will remain unchanged. When the

device is in QPI mode, the first FFH command will exit continuous read mode and the second FFH

command will exit QPI mode.

Figure41a. Disable QPI Mode Command Sequence Diagram

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Enable Reset (66H) and Reset (99H)

If the Reset command is accepted, any on-going internal operation will be terminated and the device will

return to its default power-on state and lose all the current volatile settings, such as Volatile Status

Register bits, Write Enable Latch status (WEL), Program/Erase Suspend status, Read Parameter setting

(P7-P0),Continuous Read Mode bit setting (M7-M0)and Wrap Bit Setting(W6-W4).

The “Reset (99H)” command sequence as follow: CS# goes low→Sending Enable Reset command→

CS# goes high→CS# goes low→Sending Reset command→CS# goes high. Once the Reset command is

accepted by the device, the device will take approximately tRST_R to reset. During this period, no

command will be accepted. Data corruption may happy if there is an on-going or suspended internal

Erase or Program operation when Reset command sequence is accepted by the device. It is

recommended to check the BUSY bit and the SUS bit in Status Register before issuing the Reset

command sequence.

Figure42a. Enable Reset and Reset command Sequence Diagram

Figure42b. Enable Reset and Reset command Sequence Diagram (QPI)

VER 1.1

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Read Serial Flash Discoverable Parameter (5AH)

The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing

the functional and feature capabilities of serial flash devices in a standard set of internal parameter tables.

These parameter tables can be interrogated by host system software to enable adjustments needed to

accommodate divergent features from multiple vendors. The concept is similar to the one found in the

Introduction of JEDEC Standard, JESD68 on CFI. SFDP is a standard of JEDEC Standard No.216.

Figure43a. Read Serial Flash Discoverable Parameter Command Sequence Diagram

Figure43b. Read Serial Flash Discoverable Parameter Command Sequence Diagram (QPI)

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Read Unique ID (RUID)

The Read Unique ID command accesses a factory-set read-only 128bit number that is unique to each

ACE25AA128G device. The Unique ID can be used in conjunction with user software methods to help

prevent copying or cloning of a system.

The Read Unique ID command sequence: CS# goes low→ sending Read Unique ID command→00H→

01H→94H→Dummy byte→128bit Unique ID Out→ CS# goes high.

The command sequence is show below.

Figure44. Read Unique ID (RUID) Sequence (Command 5 AH)

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ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Table 3. Signature and Parameter Identification Data Values

Add(H) DW Add

Data

Descrion

Comment

(Byte)

00H

01H

02H

03H

04H

05H

06H

(Bit)

07:00

15:08

23:16

31:24

07:00

15:08

23:16

53H

46H

44H

50H

00H

01H

53H

46H

44H

50H

00H

01H

SFDP Signature

Fixed:50444653H

SFDP Minor Revision Number

SFDP Major Revision Number

Number of Parameters Headers

Start from 00H

Start from 01H

Start from 00H

Contains 0xFFH and

can never be changed

Unused

07H

08H

09H

0AH

0BH

31:24

07:00

15:08

23:16

31:24

FFH

00H

01H

09H

FFH

00H

01H

09H

00H: It indicates a JEDEC

specified header

ID number (JEDEC)

Parameter Table Minor Revision

Number

Start from 0x00H

Start from 0x01H

Parameter Table Major Revision

Number

Parameter Table Length

(in double word)

How many DWORDs in the

Parameter table

0CH

0DH

0EH

07:00

15:08

23:16

30H

00H

30H

00H

First address of JEDEC Flash

Parameter table

Parameter Table Pointer (PTP)

Contains 0xFFH and can never

be changed

Unused

0FH

10H

11H

31:24

07:00

15:08

FFH

0BH

00H

FFH

0BH

00H

ID Number(Manufacturer ID)

Parameter Table Minor Revision

Number

It is indicates manufacturer ID

Start from 0x00H

Parameter Table Major Revision

Number

Start from 0x01H

12H

13H

23:16

31:24

01H

03H

01H

03H

Parameter Table Length

(in double word)

How many DWORDs in the

Parameter table

14H

15H

16H

07:00

15:08

23:16

60H

00H

60H

00H

First address of Flash

Parameter table

Parameter Table Pointer (PTP)

Unused

Contains 0xFFH and can never

be changed

17H

31:24

FFH

VER 1.1

57

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Table 4. Parameter Table (0): JEDEC Flash Parameter Tables

Add(H) DW Add

Description

Comment

Data

(Byte)

(Bit)

00: Reserved; 01: 4KB erase;

10: Reserved; 11: not support

4KB erase

Block/Sector Erase Size

Write Granularity

01:00

02

01b

1b

0: 1Byte, 1: 64Byte or larger

0: Nonvolatile status bit 1:

Volatile statusbit (BP status

register bit)

Write Enable Instruction Requested

for Writing to Volatile

03

0b

30H

E5H

0: Use 50H Opcode, 1: Use

06H Opcode, Note: If target

flash status register is

Nonvolatile, then bits 3 and

4must be set to 00b.

Write Enable Opcode Select for

Writing to Volatile Status Registers

04

0b

Contains 111b and can never

Unused

be

07:05

111b

changed

4KB Erase Opcode

(1-1-2) Fast Read

31H

32H

33H

15:08

16

20H

1b

20H

F1H

FFH

0=Not support, 1=Support

00: 3Byte only, 01: 3 or

4Byte,10: 4Byte only, 11:

Reserved

Address Bytes Number used in

addressing flash array

18:17

19

00b

0b

Double Transfer Rate (DTR)

clocking

0=Not support, 1=Support

(1-2-2) Fast Read

(1-4-4) Fast Read

(1-1-4) Fast Read

Unused

0=Not support, 1=Support

20

21

1b

22

1b

23

1b

Unused

31:24

FFH

Flash Memory Density

37H:34H 31:00

007FFFFFH

(1-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy

04:00 00100b

states

Clocks) not support

38H

39H

3AH

3BH

44H

(1-4-4) Fast Read Number of Mode

Bits

000b:Mode Bits not support

07:05

15:08

010b

(1-4-4) Fast Read Opcode

EBH

08H

6BH

(1-1-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy

20:16 01000b

states

Clocks) not support

(1-1-4) Fast Read Number of Mode

Bits

000b:Mode Bits not support

23:21

31:24

000b

6BH

(1-1-4) Fast Read Opcode

VER 1.1

58

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Add(H) DW Add

Description

Comment

Data

(Byte)

(Bit)

(1-1-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy

04:00 01000b

states

Clocks) not support

3CH

3DH

3EH

3FH

40H

08H

3BH

42H

BBH

EEH

(1-1-2) Fast Read Number of Mode

Bits

000b: Mode Bits not support

07:05

15:08

000b

3BH

(1-1-2) Fast Read Opcode

(1-2-2) Fast Read Number of Wait

states

20:16 00010b

(1-2-2) Fast Read Number of Mode

Bits

23:21

010b

(1-2-2) Fast Read Opcode

(2-2-2) Fast Read

Unused

31:24

00

BBH

0b

0=not support 1=support

03:01

04

111b

0b

(4-4-4) Fast Read

Unused

07:05

111b

Unused

43H:41H 31:08 0xFFH 0xFFH

45H:44H 15:00 0xFFH 0xFFH

Unused

(2-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy

20:16 00000b

states

Clocks) not support

46H

47H

00H

FFH

(2-2-2) Fast Read Number of Mode

Bits

000b: Mode Bits not support

23:21

31:24

000b

FFH

(2-2-2) Fast Read Opcode

Unused

49H:48H 15:00 0xFFH 0xFFH

(4-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy

20:16 00000b

states

Clocks) not support

4AH

00H

(4-4-4) Fast Read Number of Mode

Bits

000b: Mode Bits not support

23:21

31:24

07:00

15:08

23:16

31:24

07:00

15:08

23:16

31:24

000b

FFH

0CH

20H

0FH

52H

10H

D8H

00H

FFH

(4-4-4) Fast Read Opcode

4BH

4CH

4DH

4EH

4FH

50H

51H

52H

53H

FFH

0CH

20H

0FH

52H

10H

D8H

00H

FFH

Sector/block size=2^N bytes

0x00b: this sector type don’t

exist

Sector Type 1 Size

Sector Type 1 erase Opcode

Sector Type 2 Size

Sector/block size=2^N bytes

0x00b: this sector type don’t

exist

Sector Type 2 erase Opcode

Sector Type 3 Size

Sector/block size=2^N bytes

0x00b: this sector type don’t

exist

Sector Type 3 erase Opcode

Sector Type 4 Size

Sector/block size=2^N bytes

0x00b: this sector type don’t

exist

Sector Type 4 erase Opcode

VER 1.1

59

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Table 5. Parameter Table (1): Flash Parameter Tables

Add(H) DW Add

(Byte) (Bit)

Description

Comment

Data

2000H=2.000V

2700H=2.700V

3600H=3.600V

Vcc Supply Maximum Voltage

61H:60H 15:00

3600H 3600H

2700H 2700H

1650H=1.650V

2250H=2.250V

2300H=2.300V

2700H=2.700V

Vcc Supply Minimum Voltage

63H:62H 31:16

HW Reset# pin

HW Hold# pin

0=not support 1=support

Should be issue Reset

00

01

02

03

1b

Deep Power Down Mode

SW Reset

SW Reset Opcode

Enable(66H) before Reset 65H:64H 11:04

cmd

99H F99FH

Program Suspend/Resume

Erase Suspend/Resume

Unused

0=not support 1=support

12

13

1b

14

Wrap-Around Read mode

Wrap-Around Read mode Opcode

0=not support 1=support

15

66H

67H

23:16

77H

64H

08H:support 8B wrap-around

read 16H:8B&16B

Wrap-Around Read data length

31:24

64H

32H:8B&16B&32B

64H:8B&16B&32B&64B

0=not support 1=support

Individual block lock

Individual block lock bit

(Volatile/Nonvolatile)

Individual block lock Opcode

Individual block lock Volatile protect

bit default protect status

Secured OTP

00

01

1b

0b

0=Volatile 1=Nonvolatile

09:02

10

36H

0b

0=protect 1=unprotect

E8D9H

6BH:68H

0=not support 1=support

11

12

1b

0b

Read Lock

Permanent Lock

13

1b

Unused

15:14

31:16

11b

FFH

Unused

FFH

VER 1.1

60

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Electrical Characteristics

Power-On Timing

Table6. Power-Up Timing and Write Inhibit Threshold

Symbol

t_VSL

Parameter

VCC(min) To CS# Low

Min

10

1

Max

Unit

ms

V

t_PUW

Time Delay Before Write Instruction

Write Inhibit Voltage

10

V_WI

1

2.5

Initial Delivery State

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The

Status Register contains 00H (all Status Register bits are 0).

Data Retention and Endurance

Parameter

Typical

20

Unit

Years

Cycles

Pattern Data Retention Time

Erase/Program Endurance

100K

Latch up Characteristics

Parameter

Input Voltage Respect To VSS On I/O Pins

VCC Current

Min

-1.0V

Max

VCC+1.0V

100mA

-100mA

VER 1.1

61

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Capacitance Measurement Condition

Symbol

Parameter

Input Capacitance

Min

Typ

Max

6

Unit

pF

ns

V

Conditions

VIN=0V

C

IN

C

OUT

Output Capacitance

8

VOUT=0V

C

L

Load Capacitance

30

Input Rise And Fall time

Input Pulse Voltage

5

0.1VCC to 0.8VCC

0.2VCC to 0.7VCC

0.5VCC

Input Timing Reference Voltage

Output Timing Reference Voltage

V

Maximum Negative Overshoot Waveform

Maximum Positive Overshoot Waveform

Figure45. Input Test Waveform and MeasurementLevel

VER 1.1

62

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

DC Characteristics(T=-40℃~85℃,VCC=2.7~3.6V)

Symbol

Parameter

Test Condition

Min.

Typ

Max.

±2

Unit

μA

I

Input Leakage Current

Output Leakage Current

Standby Current

LI

I

±2

μA

LO

CS#=VCC VIN=VCC or

VSS

I

12

0.1

15

13

5

20

μA

CC1

CS#=VCC VIN=VCC or

VSS

I

Deep Power-Down Current

0.2

μA

CC2

CLK=0.1VCC/0.9VCC at

108MHz ,Q=Open(*1I/O)

CLK=0.1VCC/0.9VCC at

80MHz,Open(*1,*2,4I/O)

CLK=0.1VCC/0.9VCC at

50MHz ,Q=Open(*1I/O)

20

I

Operating Current(Read)

18

mA

CC3

7

I

Operating Current(PP)

Operating Current(WRSR)

Operating Current(SE)

Operating Current(BE)

Input Low Voltage

CS#=VCC

20

mA

V

CC4

I

20

CC5

I

20

CC6

I

20

CC7

V

IL

-0.5

0.2VCC

VCC+0.4

0.4

V

IH

Input High Voltage

0.7VCC

V

Output Low Voltage

Output High Voltage

IOL=1.6mA

IOH=-100uA

V

OL

V

VCC-0.2

V

OH

VER 1.1

63

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

AC Characteristics(T=-40℃~85℃,VCC=2.7~3.6V，C_L=30pf)

Symbol

Parameter

Min.

Typ

Max.

Unit

Serial Clock Frequency For: Fast

Read(0BH),Dual Output(3BH)

f

108

MHz

C

Serial Clock Frequency For: Dual I/O(BBH),

Quad I/O(EBH),Quad Output(6BH)

f

108

72

MHz

C1

C2

Serial Clock Frequency For QPl (0BH, EBH)

Serial Clock Frequency For: Read(03H),Read

ID(9F)

f

80

R

t

CLH

Serial Clock High Time

Serial Clock Low Time

5

ns

V/ns

ns

us

t

CLL

t

CLCH

CHCL

Serial Clock Rise Time(Slew Rate)

Serial Clock Fall Time(Slew Rate)

CS# Active Setup Time

0.2

5

t

SLCH

t

CHSH

SHCH

CS# Active Hold Time

5

CS# Not Active Setup Time

CS# Not Active Hold Time

5

t

CHSL

5

t

SHSL

SHQZ

CLQX

DVCH

CHDX

CS# High Time (read/write)

Output Disable Time

20

t

6

Output Hold Time

1

2

5

t

Data In Setup Time

Data In Hold Time

t

HLCH

Hold# Low Setup Time(relative to Clock)

Hold# High Setup Time(relative to Clock)

Hold# High Hold Time(relative to Clock)

Hold# Low Hold Time(relative to Clock)

Hold# Low To High-Z Output

Hold# Low To Low-Z Output

Clock Low To Output Valid

t

HHCH

t

CHHL

CHHH

t

HLQZ

6

HHQX

t

CLQV

6.5

t

WHSL

Write Protect Setup Time Before CS# Low

Write Protect Hold Time After CS# High

CS# High To Deep Power-Down Mode

20

t

SHWL

tDP

100

0.1

VER 1.1

64

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

CS# High To Standby Mode Without Electronic

t

RES1

20

us

Signature Read

CS# High To Standby Mode With Electronic

Signature Read

RES2

tSUS

CS# High To Next Command After Suspend

20

us

CS# High To Next Command After Reset

(from read)

CS# High To Next Command After Reset

(from program)

CS# High To Next Command After Reset

(from erase)

tRST_R

tRST_P

tRST_E

20

12

us

ms

t

Write Status Register Cycle Time

Page Programming Time

Sector Erase Time

20

0.25

70

200

0.75

700

ms

s

W

t

PP

SE

BE

CE

Block Erase Time(32K Bytes/64K Bytes)

Chip Erase Time

0.15/0.2 0.75/1.5

35 120

t

s

Figure46. Serial Input Timing

Figure47. Output Timing

VER 1.1

65

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Figure48. Hold Timing

Figure49. RESET Timing

VER 1.1

66

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Packaging information

SOP-8L (208mil)

Dimensions In Millimeters

Symbol

Min

Norm

1.950

Max

A

A1

A2

b

1.750

0.050

1.700

0.350

0.17

2.160

0.250

1.910

0.480

0.250

5.330

8.100

5.380

0.150

1.800

0.420

c

0.200

D

5.130

7.700

5.180

5.230

E

7.900

E1

e

5.280

1.270BSC

0.650

L

0.500

0°

0.800

8°

θ

VER 1.1

67

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Packaging information

SOP-16 (300mil)

Dimensions In Millimeters

Norm

Symbol

Min

Max

1.75

0.225

1.50

0.70

0.47

0.44

0.24

0.21

10.00

6.20

4.00

A

A1

A2

A3

b

0.10

1.30

0.60

0.39

0.38

0.20

0.19

9.80

5.80

3.80

1.40

0.65

b1

c

0.41

c1

D

0.20

9.90

E

6.00

E1

e

3.90

1.27BSC

h

0.25

0.50

0.80

L

L1

θ

1.05REF

0°

8°

VER 1.1

68

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Packaging information

USON4*4-8(0.85-0.80)

Dimensions In Millimeters

Symbol

Min

Norm

0.85

Max

0.90

0.05

A

A1

A2

b

0.80

0.15

0.30

4.00

2.30

4.00

2.70

0.80

0.40

0.25

3.90

2.20

3.90

2.60

0.35

4.10

2.40

4.10

2.80

D

D1

E

E1

e

L

0.35

0.45

VER 1.1

69

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Packaging information

WSON

Dimensions In Millimeters

Symbol

Min

0.70

0.00

Norm

0.75

0.02

0.20

6.00

5.00

3.40

4.00

1.27

0.40

0.60

Max

0.80

0.04

A

A1

A2

D

5.90

4.90

3.30

3.90

6.10

5.10

3.50

4.10

E

D2

E2

e

b

0.35

0.55

0.45

0.65

L

VER 1.1

70

ACE25AA128G

Serial NOR Flash Memory

128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector

Notes

ACE does not assume any responsibility for use as critical components in life support devices or systems

without the express written approval of the president and general counsel of ACE Electronics Co., LTD.

As sued herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant

into the body, or (b) support or sustain life, and shoes failure to perform when properly used in

accordance with instructions for use provided in the labeling, can be reasonably expected to result in

a significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can

be reasonably expected to cause the failure of the life support device or system, or to affect its safety

or effectiveness.

ACE Technology Co., LTD.

http://www.ace-ele.com/

VER 1.1

71


型号：	ACE25AA128G
厂家：	ACE TECHNOLOGY CO., LTD.
描述：	Serial NOR Flash Memory 128 Megabits 3.0V Quad I/O Serial Flash Memory with 4KB Uniform Sector
文件：	总71页 (文件大小：3076K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ACE25AA128G [ACE]

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