ACE4446B [ACE]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | ACE4446B |
| 厂家： | 
ACE TECHNOLOGY CO., LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：938K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACE4446B
N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE4446B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a kelvin connection to the source, which may be used to bypass the source inductance.
Features
VDS(V)=30V
ID=15A (VGS=10V)
RDS(ON)＜8.5mΩ (VGS=10V)
RDS(ON)＜13mΩ (VGS=4.5V)
Absolute Maximum Ratings
Parameter
Symbol
VDSS
Max
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
15
V
TA=25OC
TA=70OC
Drain Current (Continuous) *AC
ID
12
A
Drain Current (Pulse) *B
TA=25OC
TA=70OC
Operating and Storage Temperature Range
IDM
PD
50
3.5
2
Power Dissipation
W
O
TJ,TSTG -55 to 150 C
Packaging Type
DFN3*3-8L
VER 1.2
1
ACE4446B
N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE4446B XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
Electrical CharacteristicsTA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Min.
Typ.
Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
V(BR)DSS
IDSS
VGS=0V, ID=250uA
VDS=30V, VGS=0V
VGS=±20V, VDS=0V
VGS=10V, ID=15A
VGS=4.5V, ID=10A
VDS=VGS, IDS=250uA
VDS=5V, ID=15A
30
V
1
100
8.5
13
3
uA
nA
IGSS
5.9
7
Static Drain-Source On-Resistance
RDS(ON)
mΩ
Gate Threshold Voltage
VGS(th)
gFS
1
1.9
25
V
S
V
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
ISD=2A, VGS=0V
0.71
1.0
2
IS
A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
16
5
20.8
6.5
3.9
34
VDS=15V, ID=14A
VGS=5V
nC
3
17
5
10
VDS=15V, VGS=10V
RGEN=6Ω, RL=15Ω
ns
td(off)
tf
50
10
100
20
Dynamic
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
2470
325
VDS=15V, VGS=0V
f=1MHz
pF
Reverse Transfer Capacitance
185
Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE4446B
N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE4446B
N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE4446B
N-Channel Enhancement Mode Field Effect Transistor
Packing Information
DFN3*3-8L
Unit: mm
VER 1.2
5
ACE4446B
N-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6
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