ACE9926B [ACE]
Dual N-Channel Enhancement Mode Field Effect Transistor; 双N沟道增强型场效应晶体管
| 型号： | ACE9926B |
| 厂家： | 
ACE TECHNOLOGY CO., LTD. |
| 描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：735K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The ACE9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 2.5V to 12V. The two devices may be used
individually, in parallel or to form a bidirectional blocking switch.
Features
VDS(V)=20V
ID=6A (VGS=4.5V)
RDS(ON)<30mΩ (VGS=4.5V)
RDS(ON)<40mΩ (VGS=2.5V)
Absolute Maximum Ratings
Parameter
Symbol
VDSS
Max
20
±12
6
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
V
TA=25OC
TA=70OC
Drain Current (Continuous) * AC
Drain Current (Pulse) * B
Power Dissipation
ID
A
A
5
IDM
PD
24
2
TA=25OC
TA=70OC
W
1.3
O
Operating and Storage Temperature Range TJ,TSTG -55 to 150 C
Packaging Type
SOP-8
VER 1.2
1
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE9926B XX + H
Halogen - free
Pb - free
FM : SOP-8
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Min.
Typ.
Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
V(BR)DSS
IDSS
VGS=0V, ID=250uA
VDS=20V, VGS=0V
VGS=±12V, VDS=0V
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
VDS=VGS, ID=250uA
VDS=5V, ID=6A
20
V
1
100
30
40
1
uA
nA
IGSS
21
30
Drain-Source On-State Resistance
RDS(ON)
mΩ
Gate Threshold Voltage
VGS(th)
gFS
0.65
0.78
12
V
S
V
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
VGS=0V, ISD=1.7A
0.8
1.0
1.7
IS
A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn- Off Rise Time
Qg
Qgs
Qgd
td(on)
tr
6.24
1.64
1.34
10.4
4.4
8.11
2.13
1.74
20.8
8.8
VDS=10V, VGS=4.5V,
ID=6A
nC
VGS=4.5V, VDS=10V,
RL=10Ω, RGEN=6Ω
ns
td(off)
tf
27.36
4.16
54.72
8.32
Dynamic
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
522.3
98.48
74.69
VDS=8V, VGS=0V
f=1MHz
pF
Reverse Transfer Capacitance
Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
4
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
5
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOP-8
Unit: mm
VER 1.2
6
ACE9926B
Dual N-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
7
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