M38510/31302BAX [ACTEL]
Inverter, LS Series, 6-Func, 1-Input, TTL, CDFP14, CERAMIC, FP-14;
| 型号： | M38510/31302BAX |
| 厂家： | 
Actel Corporation |
| 描述： | Inverter, LS Series, 6-Func, 1-Input, TTL, CDFP14, CERAMIC, FP-14 CD |
| 文件： | 总217页 (文件大小：1554K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion measures
necessary to comply with this revision shall be completed
by June 30, 2014
INCH-POUND
MIL-PRF-38535K
20 December 2013
SUPERSEDING
MIL-PRF-38535J
28 December 2010
PERFORMANCE SPECIFICATION
INTEGRATED CIRCUITS (MICROCIRCUITS) MANUFACTURING,
GENERAL SPECIFICATION FOR
Comments, suggestions, or questions on this document should be addressed to: DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to CMOS@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
AMSC N/A
FSC 5962
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
1 SCOPE ......................................................................................................................................................................1
1.1 Scope......................................................................................................................................................................1
2. APPLICABLE DOCUMENTS ....................................................................................................................................1
2.1 General ...................................................................................................................................................................1
2.2 Government documents..........................................................................................................................................2
2.2.1 Specifications, standards, and handbooks...........................................................................................................2
2.2.2 Other Government documents, drawings, and publications.................................................................................2
2.3 Non-Government publications.................................................................................................................................2
2.4 Order of precedence ...............................................................................................................................................3
3. REQUIREMENTS .....................................................................................................................................................3
3.1 General ...................................................................................................................................................................3
3.1.1 Reference to applicable device specification........................................................................................................3
3.2 Item requirements ...................................................................................................................................................3
3.2.1 Certification of conformance and acquisition traceability......................................................................................4
3.3 Quality management (QM) program........................................................................................................................5
3.3.1 Manufacturer's review system..............................................................................................................................5
3.3.2 QM plan................................................................................................................................................................5
3.3.3 Self-assessment program ....................................................................................................................................5
3.3.4 Change control procedures..................................................................................................................................5
3.3.4.1 Discontinuation of products...............................................................................................................................5
3.4 Requirements for listing on a QML..........................................................................................................................5
3.4.1 QML certification requirements ............................................................................................................................6
3.4.1.1 Process capability demonstration......................................................................................................................6
3.4.1.1.1 New technology insertion...............................................................................................................................6
3.4.1.2 Management and technology validation............................................................................................................7
3.4.1.3 On-site validation ..............................................................................................................................................7
3.4.1.3.1 Second and third party validations .................................................................................................................7
3.4.1.3.2 Radiation source of supply (RSS) validations ................................................................................................7
3.4.1.4 Technology validation .......................................................................................................................................7
3.4.1.4.1 Package design selection reviews .................................................................................................................8
3.4.1.5 Manufacturer self-validation ..............................................................................................................................9
3.4.1.6 Change management system ...........................................................................................................................9
3.4.1.7 Deficiencies and concerns ................................................................................................................................9
3.4.1.8 Letter of certification..........................................................................................................................................9
3.4.2 QML qualification requirements............................................................................................................................9
3.4.2.1 Qualification extension......................................................................................................................................9
3.4.3 Qualification to RHA levels.................................................................................................................................10
3.4.4 QML listing.........................................................................................................................................................10
3.4.5 Maintenance and retention of QML....................................................................................................................10
3.4.6 QML line shutdown ............................................................................................................................................10
3.4.7 Revalidation reviews ..........................................................................................................................................10
3.4.8 Performance requirements for class T devices ..................................................................................................10
3.4.8.1 Class T radiation requirements .......................................................................................................................11
3.5 Device specification ..............................................................................................................................................11
3.6 Marking of microcircuits ........................................................................................................................................11
3.6.1 Index point..........................................................................................................................................................11
3.6.2 Part or identification number (PIN).....................................................................................................................12
3.6.2.1 RHA designator...............................................................................................................................................13
3.6.2.2 Drawing designator .........................................................................................................................................13
3.6.2.2.1 Military designator........................................................................................................................................13
3.6.2.3 Device class designator ..................................................................................................................................13
3.6.2.4 Case outline ....................................................................................................................................................13
3.6.2.5 Lead finish.......................................................................................................................................................13
3.6.3 Certification mark ...............................................................................................................................................13
3.6.3.1 QD certification mark.......................................................................................................................................13
ii
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
3.6.3.2 JAN or J mark .................................................................................................................................................14
3.6.4 Manufacturer's identification...............................................................................................................................14
3.6.4.1 Code for assembly sites..................................................................................................................................14
3.6.5 Country of origin.................................................................................................................................................14
3.6.6 Date code...........................................................................................................................................................14
3.6.7 Marking location and sequence..........................................................................................................................14
3.6.7.1 Beryllium oxide package identifier...................................................................................................................14
3.6.7.2 Electrostatic discharge (ESD) sensitivity identifier ..........................................................................................14
3.6.8 QML marked product .........................................................................................................................................15
3.6.9 Marking on container..........................................................................................................................................15
3.7 Remarking.............................................................................................................................................................15
3.8 Screening and test ................................................................................................................................................15
3.9 Technology conformance inspection (TCI)............................................................................................................15
3.9.1 TCI assessment .................................................................................................................................................15
3.10 Solderability.........................................................................................................................................................15
3.11 Traceability..........................................................................................................................................................15
3.12 ESD control.........................................................................................................................................................15
3.13 Recycled, recovered, or environmentally preferable materials............................................................................15
3.14 Alternate test requirements.................................................................................................................................16
3.15 Passive elements................................................................................................................................................16
3.15.1 Capacitors........................................................................................................................................................16
4. VERIFICATION.......................................................................................................................................................17
4.1 Verification ............................................................................................................................................................17
4.2 Screening..............................................................................................................................................................17
4.2.1 Screen testing failures........................................................................................................................................17
4.2.2 Screening resubmission criteria .........................................................................................................................17
4.2.3 Electrostatic discharge (ESD) sensitivity............................................................................................................17
4.3 Technology conformance inspection (TCI)............................................................................................................17
4.4 Qualification inspection .........................................................................................................................................17
5. PACKAGING...........................................................................................................................................................34
5.1 Packaging .............................................................................................................................................................34
6. NOTES....................................................................................................................................................................34
6.1 Intended use .........................................................................................................................................................34
6.1.1 Class T...............................................................................................................................................................34
6.2 Acquisition requirements.......................................................................................................................................34
6.3 Qualification ..........................................................................................................................................................34
6.4 Terms and definitions............................................................................................................................................34
6.4.1 Microelectronics .................................................................................................................................................34
6.4.2 Element (of a microcircuit or integrated circuit) ..................................................................................................34
6.4.3 Substrate (of a microcircuit or integrated circuit)................................................................................................35
6.4.4 Integrated circuit (microcircuit) ...........................................................................................................................35
6.4.4.1 Multichip microcircuit.......................................................................................................................................35
6.4.4.2 Monolithic microcircuit.....................................................................................................................................35
6.4.4.3 Microcircuit module .........................................................................................................................................35
6.4.5 Production lot .....................................................................................................................................................35
6.4.6 Inspection lot......................................................................................................................................................35
6.4.7 Wafer lot.............................................................................................................................................................35
6.4.8 Percent defective allowable (PDA).....................................................................................................................35
6.4.9 Delta limit ...........................................................................................................................................................35
6.4.10 Rework.............................................................................................................................................................35
6.4.11 Final seal..........................................................................................................................................................35
6.4.12 Acquiring activity ..............................................................................................................................................36
6.4.13 Qualifying activity (QA).....................................................................................................................................36
6.4.14 Parts per million (PPM) ....................................................................................................................................36
6.4.15 Device type ......................................................................................................................................................36
iii
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
6.4.16 Die type............................................................................................................................................................36
6.4.17 Radiation hardness assurance (RHA)..............................................................................................................36
6.4.18 Electrostatic discharge (ESD) sensitivity..........................................................................................................36
6.4.19 Package family.................................................................................................................................................36
6.4.20 Technology flow ...............................................................................................................................................36
6.4.21 Qualified Manufacturer's Listing (QML)............................................................................................................36
6.4.22 Third party design center..................................................................................................................................36
6.4.23 Radiation source of supply (RSS) ....................................................................................................................36
6.4.24 Form.................................................................................................................................................................36
6.4.25 Fit.....................................................................................................................................................................36
6.4.26 Function ...........................................................................................................................................................36
6.4.27 Class M............................................................................................................................................................37
6.4.28 Class N.............................................................................................................................................................37
6.4.29 Class Q ............................................................................................................................................................37
6.4.30 Class V.............................................................................................................................................................37
6.4.31 Class Y.............................................................................................................................................................37
6.4.32 Class B.............................................................................................................................................................37
6.4.33 Class S.............................................................................................................................................................37
6.4.34 Class T.............................................................................................................................................................37
6.4.35 Qualified manufacturer’s line............................................................................................................................37
6.4.36 Test optimization..............................................................................................................................................37
6.4.37 Audit team........................................................................................................................................................37
6.4.38 Class level B ....................................................................................................................................................37
6.4.39 Class level S ....................................................................................................................................................37
6.4.40 Class level vs Class .........................................................................................................................................38
6.4.41 Second party facility.........................................................................................................................................38
6.4.42 Third party facility.............................................................................................................................................38
6.4.43 New technology................................................................................................................................................38
6.4.44 Mature technology............................................................................................................................................38
6.4.45 Lot date code ...................................................................................................................................................38
6.4.46 Storage temperature ........................................................................................................................................38
6.4.47 Multi-product wafer(MPW)................................................................................................................................38
6.4.48 Package integrity demonstration test plan(PIDTP)...........................................................................................38
6.5 Discussion.............................................................................................................................................................39
6.6 Additional reference documents............................................................................................................................41
6.7 Subject term (key word) listing ..............................................................................................................................42
6.8 List of acronyms....................................................................................................................................................43
6.9 Environmentally preferable material......................................................................................................................45
6.10 Changes from previous issue..............................................................................................................................45
A.1 SCOPE.................................................................................................................................................................46
A.1.1 Scope.................................................................................................................................................................46
A.2 APPLICABLE DOCUMENTS................................................................................................................................46
A.2.1 General..............................................................................................................................................................46
A.2.2 Government documents.....................................................................................................................................46
A.2.2.1 Specifications, standards, and handbooks......................................................................................................46
A.2.2.2 Other Government documents, drawings, and publications............................................................................47
A.2.3 Non-Government publications ...........................................................................................................................47
A.2.4 Order of precedence..........................................................................................................................................48
A.3 REQUIREMENTS.................................................................................................................................................48
A.3.1 General..............................................................................................................................................................48
A.3.1.1 Reference to device specification or drawing..................................................................................................48
A.3.1.2 Conflicting requirements .................................................................................................................................49
A.3.1.3 Terms, definitions, symbols and requirements................................................................................................49
A.3.1.3.1 Microelectronics...........................................................................................................................................49
A.3.1.3.2 Element (of a microcircuit or integrated circuit)............................................................................................49
iv
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
A.3.1.3.3 Substrate (of a microcircuit or integrated circuit)..........................................................................................49
A.3.1.3.4 Integrated circuit (microcircuit).....................................................................................................................49
A.3.1.3.4.1 Multichip microcircuit.................................................................................................................................49
A.3.1.3.4.2 Hybrid microcircuit ....................................................................................................................................49
A.3.1.3.4.3 Monolithic microcircuit (or integrated circuit).............................................................................................49
A.3.1.3.4.4 Film microcircuit (or film integrated circuit)................................................................................................49
A.3.1.3.5 Microcircuit module......................................................................................................................................49
A.3.1.3.6 Production lot...............................................................................................................................................50
A.3.1.3.7 Inspection lot - class level S.........................................................................................................................50
A.3.1.3.8 Inspection lot - class level B.........................................................................................................................50
A.3.1.3.9 Inspection sublot - class level S...................................................................................................................50
A.3.1.3.10 Inspection lot split - class level B ...............................................................................................................50
A.3.1.3.11 Wafer lot ....................................................................................................................................................50
A.3.1.3.12 Package type.............................................................................................................................................50
A.3.1.3.13 Microcircuit group ......................................................................................................................................50
A.3.1.3.14 Percent defective allowable (PDA) ............................................................................................................50
Delta limit (∆)
A.3.1.3.15
.............................................................................................................................................50
A.3.1.3.16 Rework.......................................................................................................................................................51
A.3.1.3.17 Final seal ...................................................................................................................................................51
A.3.1.3.18 Acquiring activity........................................................................................................................................51
A.3.1.3.19 Qualifying activity.......................................................................................................................................51
A.3.1.3.20 Device type................................................................................................................................................51
A.3.1.3.21 Die type......................................................................................................................................................51
A.3.1.3.22 Antistatic ....................................................................................................................................................51
A.3.1.3.23 Conductive.................................................................................................................................................51
A.3.1.3.24 Insulating ...................................................................................................................................................51
A.3.1.3.25 Dissipative .................................................................................................................................................51
A.3.1.3.26 Radiation hardness assurance (RHA)........................................................................................................51
A.3.1.3.27 Electrostatic discharge (ESD) sensitivity....................................................................................................51
A.3.1.3.28 Custom microcircuit ...................................................................................................................................52
A.3.1.3.29 Die family...................................................................................................................................................52
A.3.1.3.30 Package family ..........................................................................................................................................52
A.3.1.3.31 Military operating temperature range.........................................................................................................52
A.3.1.3.32 Process monitor.........................................................................................................................................52
A.3.1.3.33 Device specification...................................................................................................................................52
A.3.1.3.34 Class level B..............................................................................................................................................52
A.3.1.3.35 Class level S..............................................................................................................................................52
A.3.2 Item requirements..............................................................................................................................................52
A.3.2.1 Electrical test requirements.............................................................................................................................52
A.3.2.2 Alternate die/fabrication requirements ............................................................................................................53
A.3.2.2.1 Example C of C............................................................................................................................................53
A.3.2.2.2 Die evaluation requirements ........................................................................................................................54
A.3.3 Classification of requirements............................................................................................................................54
A.3.3.1 Certification of conformance and acquisition traceability ................................................................................55
A.3.4 Quality assurance requirements ........................................................................................................................56
A.3.4.1 Qualification....................................................................................................................................................56
A.3.4.1.1 Compliance validation..................................................................................................................................56
A.3.4.1.2 Process monitor programs...........................................................................................................................56
A.3.4.1.2.1 Inspection by scanning electron microscope (SEM) .................................................................................56
A.3.4.1.2.2 Wire bonding.............................................................................................................................................56
A.3.4.1.2.3 Die attachment..........................................................................................................................................56
A.3.4.1.2.4 Lid seal .....................................................................................................................................................56
A.3.4.1.2.5 Particle detection ......................................................................................................................................56
A.3.4.1.2.6 Lead trimming and final lead finish thickness............................................................................................57
A.3.4.1.3 Qualification to RHA levels ..........................................................................................................................57
v
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
A.3.4.1.4 Qualification to ESD classes........................................................................................................................58
A.3.4.2 Changes and notification of change to product or quality assurance program ...............................................59
A.3.4.2.1 Discontinuation of products..........................................................................................................................59
A.3.4.3 Screening........................................................................................................................................................59
A.3.4.4 Quality conformance inspection (QCI)............................................................................................................59
A.3.4.5 Wafer lot acceptance......................................................................................................................................59
A.3.4.6 Traceability .....................................................................................................................................................59
A.3.4.6.1 Lot travelers.................................................................................................................................................59
A.3.4.7 Government source inspection .......................................................................................................................59
A.3.5 Design and construction ....................................................................................................................................59
A.3.5.1 Package..........................................................................................................................................................60
A.3.5.1.1 Polymeric materials......................................................................................................................................60
A.3.5.1.2 Package configurations................................................................................................................................60
A.3.5.2 Metals.............................................................................................................................................................60
A.3.5.3 Other materials ...............................................................................................................................................60
A.3.5.4 Design documentation....................................................................................................................................60
A.3.5.4.1 Die topography ............................................................................................................................................60
A.3.5.4.2 Die intraconnection pattern..........................................................................................................................60
A.3.5.4.3 Die to terminal interconnection ....................................................................................................................61
A.3.5.4.4 Schematic diagrams ....................................................................................................................................61
A.3.5.5 Internal conductors .........................................................................................................................................61
A.3.5.5.1 Metallization thickness.................................................................................................................................63
A.3.5.5.2 Internal wire size and material .....................................................................................................................63
A.3.5.5.3 Internal lead wires........................................................................................................................................64
A.3.5.5.4 Verification of glassivation layer integrity.....................................................................................................64
A.3.5.6 Package element material and finish..............................................................................................................64
A.3.5.6.1 Package material.........................................................................................................................................64
A.3.5.6.2 Lead or terminal material.............................................................................................................................65
A.3.5.6.3 Microcircuit finishes......................................................................................................................................65
A.3.5.6.3.1 Finish thickness measurements................................................................................................................65
A.3.5.6.3.2 Lead finish ................................................................................................................................................66
A.3.5.6.3.3 Package element (other than lead or terminal) finish................................................................................66
A.3.5.6.3.4 Hot solder dip............................................................................................................................................66
A.3.5.6.3.5 Tin-lead plate............................................................................................................................................67
A.3.5.7 Die plating and mounting................................................................................................................................67
A.3.5.8 Glassivation ....................................................................................................................................................69
A.3.5.9 Die thickness ..................................................................................................................................................70
A.3.5.10 Laser scribing ...............................................................................................................................................70
A.3.5.11 Internal lead separation for class level S devices .........................................................................................70
A.3.6 Marking of microcircuits.....................................................................................................................................70
A.3.6.1 Index point ......................................................................................................................................................70
A.3.6.2 PIN..................................................................................................................................................................71
A.3.6.2.1 Military designator........................................................................................................................................71
A.3.6.2.2 RHA designator ...........................................................................................................................................71
A.3.6.2.3 Device specification.....................................................................................................................................71
A.3.6.2.4 Device type..................................................................................................................................................71
A.3.6.2.5 Device class.................................................................................................................................................71
A.3.6.2.6 Case outline.................................................................................................................................................71
A.3.6.2.7 Lead finish ...................................................................................................................................................71
A.3.6.2.8 Drawing designator......................................................................................................................................71
A.3.6.3 Identification codes.........................................................................................................................................72
A.3.6.3.1 Class level B die fabrication date code........................................................................................................72
A.3.6.3.2 Inspection lot identification code for class levels S and B............................................................................72
A.3.6.4 Manufacturer's identification ...........................................................................................................................72
A.3.6.5 Manufacturer's designating symbol.................................................................................................................72
vi
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
A.3.6.6 Country of origin .............................................................................................................................................72
A.3.6.7 Compliance indicator/certification mark ..........................................................................................................72
A.3.6.8 Serialization ....................................................................................................................................................72
A.3.6.9 Marking location and sequence ......................................................................................................................73
A.3.6.9.1 Beryllium oxide package identifier ...............................................................................................................73
A.3.6.9.2 Electrostatic discharge (ESD) sensitivity identifier.......................................................................................73
A.3.6.10 Marking on container ....................................................................................................................................73
A.3.6.11 Marking option for controlled storage of class level B...................................................................................73
A.3.6.12 Marking option for qualification or quality conformance inspection (QCI) .....................................................73
A.3.6.13 Remarking ....................................................................................................................................................74
A.3.7 Workmanship.....................................................................................................................................................74
A.3.7.1 Rework provisions ..........................................................................................................................................74
A.3.7.1.1 Rebonding of monolithic devices .................................................................................................................74
A.4 VERIFICATION.....................................................................................................................................................75
A.4.1 Responsibility for inspection ..............................................................................................................................75
A.4.1.1 Inspection during manufacture........................................................................................................................75
A.4.1.1.1 Metal package isolation test for class level S devices .................................................................................75
A.4.1.2 Control and inspection of acquisition sources.................................................................................................75
A.4.1.3 Control and inspection records .......................................................................................................................75
A.4.1.4 Government source inspection (GSI)..............................................................................................................75
A.4.1.5 Manufacturer control over its distributors........................................................................................................75
A.4.1.6 Distributor inventory, traceability and handling control....................................................................................75
A.4.2 Solderability.......................................................................................................................................................75
A.4.3 General inspection conditions............................................................................................................................75
A.4.3.1 Classification of inspections and tests ............................................................................................................75
A.4.3.2 Sampling.........................................................................................................................................................76
A.4.3.2.1 Disposal of samples.....................................................................................................................................76
A.4.3.2.2 Destructive tests ..........................................................................................................................................76
A.4.3.2.3 Nondestructive tests ....................................................................................................................................77
A.4.3.3 Formation of lots.............................................................................................................................................77
A.4.3.3.1 Resubmission of failed lots ..........................................................................................................................78
A.4.3.4 Test method deviation.....................................................................................................................................78
A.4.3.5 Procedure in case of test equipment failure or operator error.........................................................................78
A.4.3.5.1 Procedure for sample tests..........................................................................................................................78
A.4.3.5.2 Procedure for screening tests......................................................................................................................78
A.4.3.5.3 Failure and corrective action reports............................................................................................................78
A.4.3.6 Electrical test equipment verification...............................................................................................................78
A.4.3.7 Manufacturer imposed tests............................................................................................................................79
A.4.4 Qualification procedures....................................................................................................................................79
A.4.4.1 General...........................................................................................................................................................79
A.4.4.2 Qualification....................................................................................................................................................79
A.4.4.2.1 Inspection routine ........................................................................................................................................79
A.4.4.2.1.1 Sample......................................................................................................................................................79
A.4.4.2.2 Group A electrical testing.............................................................................................................................79
A.4.4.2.3 Group B testing............................................................................................................................................79
A.4.4.2.4 Groups C and D testing ...............................................................................................................................79
A.4.4.2.5 Group E testing............................................................................................................................................79
A.4.4.2.6 Approval of other lead finishes.....................................................................................................................80
A.4.4.2.7 Approval of other lead material....................................................................................................................80
A.4.4.2.8 Electrostatic discharge (ESD) sensitivity......................................................................................................80
A.4.5 Quality conformance inspection (QCI)...............................................................................................................80
A.4.5.1 General...........................................................................................................................................................80
A.4.5.2 Group A inspection .........................................................................................................................................80
A.4.5.3 Group B inspection .........................................................................................................................................80
A.4.5.4 Group C inspection for class level B only........................................................................................................80
vii
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
A.4.5.4.1 Group C sample selection............................................................................................................................81
A.4.5.4.1.1 Microcircuit group assignments ................................................................................................................81
A.4.5.4.1.2 Product acceptable for delivery.................................................................................................................81
A.4.5.5 Group D inspection.........................................................................................................................................81
A.4.5.5.1 Group D sample selection............................................................................................................................84
A.4.5.5.2 Incoming vendor material control program...................................................................................................84
A.4.5.6 Group E inspection .........................................................................................................................................84
A.4.5.6.1 Group E sample selection............................................................................................................................84
A.4.5.7 End-point tests for groups B, C, and D (and E if applicable) inspections........................................................84
A.4.5.8 Nonconformance ............................................................................................................................................85
A.4.5.8.1 Group B failure.............................................................................................................................................85
A.4.5.8.2 Alternate group B failure..............................................................................................................................85
A.4.5.8.3 Group C failure ............................................................................................................................................86
A.4.5.8.4 Group D failure ............................................................................................................................................86
A.4.6 Screening...........................................................................................................................................................86
A.4.6.1 Burn-in............................................................................................................................................................86
A.4.6.1.1 Lots and sublots resubmitted for burn-in......................................................................................................86
A.4.6.1.2 Burn-in acceptance criteria ..........................................................................................................................87
A.4.6.1.2.1 Failure analysis of burn-in screen failures for class level S devices .........................................................87
A.4.6.2 External visual screen.....................................................................................................................................87
A.4.6.3 Particle impact noise detection (PIND) test for class level S devices .............................................................87
A.4.6.4 Lead forming...................................................................................................................................................87
A.4.6.5 Nondestructive bond pull test for class level S devices...................................................................................87
A.4.7 Test results ........................................................................................................................................................88
A.4.7.1 Screening test data for class level S microcircuits..........................................................................................88
A.4.8 Quality assurance program................................................................................................................................88
A.4.8.1 Manufacturer certification................................................................................................................................88
A.4.8.1.1 Design, processing, manufacturing, and testing instructions.......................................................................89
A.4.8.1.1.1 Conversion of customer requirements into manufacturer's internal instructions.......................................89
A.4.8.1.1.2 Personnel training and testing ..................................................................................................................89
A.4.8.1.1.3 Inspection of incoming materials and utilities, and of work in-process......................................................89
A.4.8.1.1.4 Quality control operations .........................................................................................................................89
A.4.8.1.1.5 Quality assurance operations ...................................................................................................................89
A.4.8.1.1.6 Design, processing, manufacturing equipment, and materials instructions...............................................91
A.4.8.1.1.7 Cleanliness and atmosphere control in work areas ..................................................................................91
A.4.8.1.1.8 Design, material, and process change control..........................................................................................91
A.4.8.1.1.9 Tool, gauge, and test equipment maintenance and calibration.................................................................91
A.4.8.1.1.10 Failure and defect analysis and feedback...............................................................................................92
A.4.8.1.1.11 Corrective action and evaluation.............................................................................................................92
A.4.8.1.1.12 Incoming, in-process, and outgoing inventory control.............................................................................92
A.4.8.1.1.13 Schematics .............................................................................................................................................92
A.4.8.1.1.14 ESD handling control program................................................................................................................92
A.4.8.1.2 Records to be maintained............................................................................................................................92
A.4.8.1.2.1 Personnel training and testing ..................................................................................................................94
A.4.8.1.2.1.1 Training of operators and inspectors......................................................................................................94
A.4.8.1.2.2 Inspection operations................................................................................................................................94
A.4.8.1.2.3 Failure and defect reports and analyses...................................................................................................94
A.4.8.1.2.4 Initial documentation and subsequent changes in design, materials, or processing.................................94
A.4.8.1.2.5 Equipment calibrations..............................................................................................................................95
A.4.8.1.2.6 Process, utility, and material controls........................................................................................................95
A.4.8.1.2.7 Product lot identification............................................................................................................................95
A.4.8.1.2.8 Product traceability ...................................................................................................................................95
A.4.8.1.3 Quality assurance program plan..................................................................................................................95
A.4.8.1.3.1 Functional block organization chart ..........................................................................................................96
A.4.8.1.3.2 Examples of manufacturing flowchart.......................................................................................................96
viii
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
A.4.8.1.3.3 Proprietary-document identification...........................................................................................................97
A.4.8.1.3.4 Examples of design, material, equipment, visual standard, and process instructions...............................97
A.4.8.1.3.5 Examples of records.................................................................................................................................97
A.4.8.1.3.6 Manufacturer's internal instructions for internal visual inspection .............................................................97
A.4.8.1.3.7 Examples of travelers ...............................................................................................................................97
A.4.8.1.3.8 Examples of design and construction baseline.........................................................................................98
A.4.9 Self-audit requirements......................................................................................................................................98
A.4.9.1 Self-audit requirements...................................................................................................................................98
A.4.9.2 Definitions.......................................................................................................................................................98
A.4.9.2.1 Self-audit......................................................................................................................................................98
A.4.9.2.2 Audit checklist..............................................................................................................................................98
A.4.9.3 General...........................................................................................................................................................98
A.4.9.3.1 Self-audit program .......................................................................................................................................98
A.4.9.3.1.1 Correction of deficiencies..........................................................................................................................98
A.4.9.3.1.2 Deviation from critical documents.............................................................................................................98
A.4.9.3.1.3 Training and retraining of auditors ............................................................................................................98
A.4.9.3.1.4 Self-audit schedule and frequency............................................................................................................98
A.4.9.3.2 Self-audit representatives............................................................................................................................98
A.4.9.3.3 Audit deficiencies.........................................................................................................................................98
A.4.9.3.4 Audit follow-up .............................................................................................................................................99
A.4.9.3.5 Audit schedules and intervals ......................................................................................................................99
A.4.9.3.6 Self-audit report ...........................................................................................................................................99
A.4.9.3.7 Self-audit areas............................................................................................................................................99
A.4.9.3.8 Self-audit checklist.......................................................................................................................................99
A.5 PACKAGING ......................................................................................................................................................100
A.5.1 Packaging........................................................................................................................................................100
A.5.2 Packaging requirements..................................................................................................................................100
A.5.2.1 Carrier and container....................................................................................................................................100
A.5.2.2 Marking of container .....................................................................................................................................100
A.6 NOTES ...............................................................................................................................................................101
A.6.1 Intended use....................................................................................................................................................101
A.6.2 Acquisition requirements .................................................................................................................................101
A.6.2.1 Lead finish designator...................................................................................................................................101
B.1 SCOPE...............................................................................................................................................................102
B.1.1 Scope...............................................................................................................................................................102
B.2 APPLICABLE DOCUMENTS..............................................................................................................................102
B.2.1 General............................................................................................................................................................102
B.2.2 Government documents...................................................................................................................................102
B.2.2.1 Specifications, standards, and handbooks....................................................................................................102
B.2.3 Non-Government publications .........................................................................................................................102
B.2.4 Order of precedence........................................................................................................................................103
B.3 REQUIREMENTS...............................................................................................................................................103
B.3.1 General............................................................................................................................................................103
B.3.1.1 Acquiring activity...........................................................................................................................................103
B.3.2 Conflicting requirements..................................................................................................................................103
B.3.3 Validation (certification)....................................................................................................................................104
B.3.4 Manufacturing verification................................................................................................................................104
B.3.5 Design verification ...........................................................................................................................................104
B.3.6 Part or identifying number (PIN) ......................................................................................................................104
B.3.7 Serialization .....................................................................................................................................................104
B.3.8 Traceability ......................................................................................................................................................104
B.3.9 New technology requirement...........................................................................................................................104
B.3.10 Package integrity demonstration test plan (PIDTP) ........................................................................................104
B.3.11 Solder terminated microcircuits.......................................................................................................................104
B.3.12 Assembly materials.........................................................................................................................................104
ix
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
B.3.13 Moisture sensitivity level (MSL) ......................................................................................................................104
B.4 VERIFICATION...................................................................................................................................................105
B.4.1 Screening test for class V and class Y.............................................................................................................105
B.4.2 Screening for solder termination microcircuits of class V and class Y .............................................................105
B.4.2.1 Ball grid array (BGA) microcircuits................................................................................................................105
B.4.2.2 Column grid array (CGA) microcircuits .........................................................................................................105
B.4.3 Technology conformance inspection (TCI) for class V and class Y .................................................................106
C.1 SCOPE...............................................................................................................................................................109
C.1.1 Scope ..............................................................................................................................................................109
C.2 APPLICABLE DOCUMENTS..............................................................................................................................109
C.2.1 General............................................................................................................................................................109
C.2.2 Government documents ..................................................................................................................................109
C.2.2.1 Specifications, standards, and handbooks ...................................................................................................109
C.2.3 Non-Government publications .........................................................................................................................109
C.2.4 Order of precedence........................................................................................................................................110
C.3 REQUIREMENTS...............................................................................................................................................110
C.3.1 General............................................................................................................................................................110
C.3.2 TRB duties.......................................................................................................................................................110
C.3.2.1 TRB/RSS......................................................................................................................................................110
C.3.3 RHA QM plan ..................................................................................................................................................110
C.3.3.1 Qualification testing to RHA levels................................................................................................................110
C.3.4 RHA/QML certification requirements ...............................................................................................................110
C.3.4.1 Process capability demonstration.................................................................................................................111
C.3.4.1.1 Design .......................................................................................................................................................111
C.3.4.1.2 Wafer fabrication .......................................................................................................................................112
C.3.4.1.3 Wafer acceptance plan..............................................................................................................................114
C.3.5 On-site validation.............................................................................................................................................114
C.3.5.1 Technology validation...................................................................................................................................114
C.3.6 RHA packages.................................................................................................................................................114
C.3.7 Demonstration vehicles ...................................................................................................................................114
C.3.7.1 Qualification test plan ...................................................................................................................................114
C.3.7.2 Qualification test report.................................................................................................................................114
C.4 VERIFICATION ..................................................................................................................................................115
C.4.1 Traceability......................................................................................................................................................115
C.4.2 Design requirements .......................................................................................................................................115
C.4.3 Radiation response characterization ...............................................................................................................115
C.4.4 End-of-line technology conformance inspection (TCI) testing (option 1) .........................................................115
C.4.4.1 End-point tests for group E...........................................................................................................................115
C.4.5 In-line TCI testing (option 2) ............................................................................................................................115
C.5 NOTES ...............................................................................................................................................................119
C.5.1 Additional reference documents ......................................................................................................................119
D.1 SCOPE...............................................................................................................................................................121
D.1.1 Scope ..............................................................................................................................................................121
D.2 APPLICABLE DOCUMENTS..............................................................................................................................121
D.3 REQUIREMENTS...............................................................................................................................................121
D.3.1 Definitions........................................................................................................................................................121
D.3.2 Symbols...........................................................................................................................................................121
D.4 STATISTICAL SAMPLING PROCEDURES AND TABLE ..................................................................................121
D.4.1 General............................................................................................................................................................121
D.4.1.1 Selection of samples ....................................................................................................................................121
D.4.1.2 Failures.........................................................................................................................................................121
D.4.2 Single-lot sampling method .............................................................................................................................121
D.4.2.1 Sample size..................................................................................................................................................122
D.4.2.2 Acceptance procedure..................................................................................................................................122
D.4.2.3 Additional sample .........................................................................................................................................122
x
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
D.4.2.4 Multiple criteria .............................................................................................................................................122
D.4.2.5 One hundred percent inspection...................................................................................................................122
D.4.2.6 Tightened inspection ....................................................................................................................................122
F.1 SCOPE ...............................................................................................................................................................129
F.1.1 Scope...............................................................................................................................................................129
F.2 APPLICABLE DOCUMENTS..............................................................................................................................129
F.2.1 General............................................................................................................................................................129
F.2.2 Government documents...................................................................................................................................129
F.2.2.1 Specifications, standards, and handbooks....................................................................................................129
F.2.3 Non-Government publications..........................................................................................................................129
F.2.4 Order of precedence........................................................................................................................................129
F.3 REQUIREMENTS...............................................................................................................................................130
F.3.1 Marking............................................................................................................................................................130
F.3.2 Process monitors .............................................................................................................................................130
F.3.3 Lead finish........................................................................................................................................................130
F.3.4 Item requirements............................................................................................................................................130
F.4 VERIFICATION...................................................................................................................................................131
F.4.1 General operation flow.....................................................................................................................................131
F.4.2 Tape.................................................................................................................................................................131
F.4.3 Bump ...............................................................................................................................................................131
F.4.3.1 Visual examination of bump..........................................................................................................................132
F.4.4 Bond ................................................................................................................................................................132
F.4.4.1 Bond process characterization......................................................................................................................132
F.4.4.2 Visual inspection of bond..............................................................................................................................133
F.4.5 Encapsulant .....................................................................................................................................................133
F.4.5.1 Visual examination of encapsulant................................................................................................................134
F.4.6 Screening.........................................................................................................................................................134
F.4.6.1 Optional internal visual..................................................................................................................................134
F.4.6.2 Internal visual screen....................................................................................................................................134
F.4.6.3 Temperature cycle ........................................................................................................................................134
F.4.6.4 Burn-in ..........................................................................................................................................................134
F.4.6.5 Percent defective allowable (PDA)................................................................................................................134
F.4.6.6 External visual...............................................................................................................................................134
F.4.7 Quality conformance inspection (QCI) .............................................................................................................134
F.4.7.1 Group A inspection .......................................................................................................................................134
F.4.7.2 Group B inspection .......................................................................................................................................134
F.4.7.2.1 Resistance to solvents...............................................................................................................................134
F.4.7.2.2 Attachability................................................................................................................................................134
F.4.7.2.3 Destructive bond strength..........................................................................................................................135
F.4.7.2.4 Constant acceleration ................................................................................................................................135
F.4.7.3 Group C inspection .......................................................................................................................................135
F.4.7.4 Group D inspection .......................................................................................................................................135
F.4.7.4.1 Highly accelerated stress testing (HAST)...................................................................................................136
F.4.7.4.2 Post-test visual examinations.....................................................................................................................136
F.4.8 Major changes .................................................................................................................................................136
G.1 SCOPE...............................................................................................................................................................137
G.1.1 Scope..............................................................................................................................................................137
G.2 APPLICABLE DOCUMENTS .............................................................................................................................137
G.2.1 General............................................................................................................................................................137
G.2.2 Other Government documents, drawings, and publications............................................................................137
G.2.3 Non-Government publications.........................................................................................................................137
G.2.4 Order of precedence .......................................................................................................................................137
G.3 REQUIREMENTS ..............................................................................................................................................138
G.3.1 QM program ....................................................................................................................................................138
G.3.2 Manufacturer's review system.........................................................................................................................138
xi
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
G.3.2.1 Organizational structure ...............................................................................................................................138
G.3.2.2 TRB duties....................................................................................................................................................138
G.3.2.2.1 QML certification and qualification test plan (see G.3.3g) .........................................................................140
G.3.2.3 Status report.................................................................................................................................................140
G.3.3 QM plan...........................................................................................................................................................141
G.3.3.1 QM plan outline ............................................................................................................................................141
G.3.4 Change control procedures.............................................................................................................................143
G.3.4.1 Design methodology change........................................................................................................................144
G.3.4.2 Fabrication process change .........................................................................................................................144
G.3.4.3 Assembly process change............................................................................................................................145
G.3.4.4 Package change...........................................................................................................................................146
G.3.4.5 Test facility change.......................................................................................................................................146
H.1 SCOPE...............................................................................................................................................................148
H.1.1 Scope ..............................................................................................................................................................148
H.2 APPLICABLE DOCUMENTS..............................................................................................................................148
H.2.1 General............................................................................................................................................................148
H.2.2 Government documents ..................................................................................................................................148
H.2.2.1 Specifications, standards, and handbooks ...................................................................................................148
H.2.3 Non-Government publications .........................................................................................................................149
H.2.4 Order of precedence........................................................................................................................................149
H.3 REQUIREMENTS...............................................................................................................................................150
H.3.1 General............................................................................................................................................................150
H.3.1.1 Characterization requirements......................................................................................................................150
H.3.1.2 Certification...................................................................................................................................................150
H.3.1.3 Validation......................................................................................................................................................150
H.3.1.4 Transitional certification................................................................................................................................150
H.3.1.5 Qualification requirements............................................................................................................................150
H.3.1.6 New technology requirements ......................................................................................................................150
H.3.1.7 Mature technology requirements ..................................................................................................................150
H.3.1.8 General QML process flows .........................................................................................................................150
H.3.1.9 Overview of QML Approval Process.............................................................................................................153
H.3.1.10 Manufacturer’s Responsibility.....................................................................................................................154
H.3.1.11 Qualifying Activity (QA) Responsibility........................................................................................................154
H.3.2 Certification......................................................................................................................................................154
H.3.2.1 Design, Wafer Fabrication, Assembly, and Test Certification.......................................................................154
H.3.2.1.1 Design .......................................................................................................................................................154
H.3.2.1.1.1 Circuit design..........................................................................................................................................154
H.3.2.1.1.2 Design checklist (Class level S)..............................................................................................................155
H.3.2.1.1.3 Package Design .....................................................................................................................................156
H.3.2.1.2 Wafer fabrication .......................................................................................................................................157
H.3.2.1.2.1 Wafer fabrication checklist (Class level S)..............................................................................................157
H.3.2.1.3 SPC and in-process monitoring program...................................................................................................158
H.3.2.1.3.1 SPC and in-process monitoring checklist (Class level S) .......................................................................159
H.3.2.1.3.2 Parametric monitor .................................................................................................................................160
H.3.2.1.4 Wafer acceptance plan..............................................................................................................................162
H.3.2.1.5 Assembly and packaging...........................................................................................................................163
H.3.2.1.5 Assembly and packaging technology certification .....................................................................................163
H.3.2.1.6 SPC and in-process monitoring program...................................................................................................164
H.3.2.1.7 Test capability............................................................................................................................................164
H.3.2.1.7 Certification approval.................................................................................................................................164
H.3.2.2 Physics-of-failure/TCV reliability assessment...............................................................................................164
H.3.2.2.1 Reliability assessment plan .......................................................................................................................164
H.3.2.2.2 TCV program.............................................................................................................................................164
H.3.2.2.2.1 TCV certification .....................................................................................................................................165
H.3.2.2.3 Assembly and packaging...........................................................................................................................166
xii
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
H.3.2.2.3.1 Assembly process technology ................................................................................................................166
H.3.2.2.3.2 Packaging technology.............................................................................................................................166
H.3.2.2.4 Reliability assessment report.....................................................................................................................167
H.3.3 Transitional certification...................................................................................................................................167
H.3.3.1 Transitional certification and qualification.....................................................................................................167
H.3.4 Qualification.....................................................................................................................................................168
H.3.4.1 Technology qualification...............................................................................................................................168
H.3.4.1.1 Process technology validation ...................................................................................................................169
H.3.4.1.2 Technology qualification eligibility..............................................................................................................169
H.3.4.1.3 Demonstration vehicles .............................................................................................................................169
H.3.4.2 Technology qualification test plan.................................................................................................................169
H.3.4.3 Wafer fabrication technology validation........................................................................................................170
H.3.4.4 Assembly/Packaging technology validation..................................................................................................170
H.3.4.4.1 Package integrity demonstration test plan (PIDTP)...................................................................................171
H.3.4.4.1.1 Non-Hermetic packages .........................................................................................................................171
H.3.4.4.1.2 Flip-chip assembly..................................................................................................................................171
H.3.4.4.1.3 Solder terminations.................................................................................................................................171
H.3.4.5 Technology qualification report approval......................................................................................................176
H.3.4.6 Qualification test report.................................................................................................................................176
H.3.4.7 Qualification test failures...............................................................................................................................176
H.3.4.8 Product qualification (extension from existing qualified technology).............................................................177
H.3.5 Standard microcircuit drawings........................................................................................................................178
H.3.6 Listing of microcircuits on the Qualified Manufacturer’s List (QML).................................................................178
J.1 SCOPE................................................................................................................................................................180
J.1.1 Scope...............................................................................................................................................................180
J.2 APPLICABLE DOCUMENTS ..............................................................................................................................180
J.2.1 General.............................................................................................................................................................180
J.2.2 Government documents...................................................................................................................................180
J.2.2.1 Specifications, standards, and handbooks....................................................................................................180
J.2.3 Non-Government publications..........................................................................................................................180
J.2.4 Order of precedence ........................................................................................................................................180
J.3 TCI AND SCREENING INFORMATION..............................................................................................................181
J.3.1 Mask requirements (when applicable)..............................................................................................................181
J.3.1.1 Wafer fabrication process..............................................................................................................................181
J.3.2 Assembly process procedures .........................................................................................................................181
J.3.2.1 Assembly rework requirements .....................................................................................................................181
J.3.3 Internal visual inspection..................................................................................................................................181
J.3.4 Constant acceleration.......................................................................................................................................182
J.3.5 Burn-in..............................................................................................................................................................182
J.3.6 Final electrical measurements..........................................................................................................................182
J.3.7 Seal (fine and gross leak) testing .....................................................................................................................182
J.3.8 Pattern failures .................................................................................................................................................182
J.3.8.1 Pattern failure rejects ....................................................................................................................................182
J.3.9 TCI ...................................................................................................................................................................182
J.3.9.1 General..........................................................................................................................................................183
J.3.9.2 TCI reporting .................................................................................................................................................183
J.3.9.3 Technology conformance inspection of multi-product wafer lots ...................................................................183
J.3.10 End-of-line TCI (option 1) ...............................................................................................................................183
J.3.10.1 Group A inspection......................................................................................................................................184
J.3.10.2 Group B inspection......................................................................................................................................184
J.3.10.3 Group C inspection......................................................................................................................................184
J.3.10.4 Group D inspection......................................................................................................................................184
J.3.10.5 Group E inspection......................................................................................................................................184
J.3.10.6 End-point tests for groups C, D, (E if applicable).........................................................................................184
J.3.10.7 End-of-line TCI testing (option 1).................................................................................................................184
xiii
MIL-PRF-38535K
CONTENTS
PARAGRAPH
PAGE
J.3.11 In-line TCI testing (option 2)...........................................................................................................................184
J.3.11.1 Group A electrical testing ............................................................................................................................185
J.3.11.2 Group C life tests.........................................................................................................................................185
J.3.12 Test optimization requirements ......................................................................................................................185
INDEX........................................................................................................................................................................187
FIGURES
FIGURE 1. The QML manufacturing line ....................................................................................................................40
FIGURE 2. Combinations of a manufacturing line.......................................................................................................40
FIGURE F-1. Lead contact length.............................................................................................................................136
FIGURE G-1. Generic qualification flow diagram......................................................................................................139
TABLES
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits..........................18
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits..........................19
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits..........................20
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits..........................21
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits..........................22
TABLE IB. Tests/monitors for plastic packages ..........................................................................................................23
TABLE II. Group B tests (Mechanical and environmental test) ...................................................................................24
TABLE II. Group B tests (Mechanical and environmental test) ...................................................................................25
TABLE II. Group B tests (Mechanical and environmental test) ...................................................................................26
TABLE II. Group B tests (Mechanical and environmental test) ...................................................................................27
TABLE III. Group A (electrical tests) ...........................................................................................................................28
TABLE IV. Group C life tests.......................................................................................................................................29
TABLE V. Group D tests (Package related test) .........................................................................................................30
TABLE V. Group D tests (Package related test) .........................................................................................................31
TABLE V. Group D tests (Package related test) .........................................................................................................32
TABLE V. Group D tests (Package related test) .........................................................................................................33
TABLE A-I. Testing guidelines for changes identified as major...................................................................................62
TABLE A-I. Testing guidelines for changes identified as major...................................................................................63
FIGURE A-1. Solder dipping area when seating plane is not defined.........................................................................66
TABLE A-II. Lead finish systems.................................................................................................................................67
TABLE A-III. Coating thickness and composition requirements..................................................................................68
TABLE A-IV. Package element (other than leads/terminals) finish systems ...............................................................69
TABLE A-V. Lead finish ..............................................................................................................................................71
TABLE A-VI. Digital microcircuits................................................................................................................................82
TABLE A-VII. Linear microcircuits...............................................................................................................................83
TABLE A-VIII. Other microcircuits...............................................................................................................................83
TABLE A-IX. Application specific microcircuits............................................................................................................83
TABLE A-X. Quality assurance program requirements...............................................................................................90
TABLE C-I. Group E (RHA) TCI/QCI test for class Q, class V and class Y...............................................................116
TABLE C-I. Group E (RHA) TCI/QCI test for class Q, class V and class Y...............................................................117
TABLE C-I. Group E (RHA) TCI/QCI test for class Q, class V and class Y...............................................................118
TABLE D-I. Sample size series (SSS) sampling plan ...............................................................................................123
TABLE D-II. Hypergeometric sampling plans for small lot sizes of 200 or less.........................................................124
TABLE D-II. Hypergeometric sampling plans for small homogenous lot sizes of 200 or less ...................................125
TABLE H-IA. Assembly process technology testing for hermetic and non-hermetic packages.................................172
TABLE H-IB. Assembly process technology testing for plastic packages .................................................................173
TABLE H-IIA. Technology characterization testing for hermetic and non-hermetic packages ..................................174
TABLE H-IIB. Technology characterization testing for plastic packages...................................................................175
TABLE J-I. End-of-line TCI testing procedure (option 1)...........................................................................................185
xiv
MIL-PRF-38535K
This specification is approved for use by all Departments and Agencies of the Department of Defense.
This document is a performance specification. It is intended to provide the device manufacturers an acceptable
established baseline in order to support Government microcircuit application and logistic programs. The basic
section of this specification has been structured as a performance specification, which is supplemented with detailed
appendices. These appendices provide guidance to manufacturers on demonstrated successful approaches to
meeting military performance needs. These appendices are included as a benchmark and are intended to impose
performance requirements. For QML microcircuits the manufacturer is required to develop a program plan that
meets or exceeds the performance detailed in these appendices (see appendices A, G, H, and J). Appendix A is
mandatory for manufacturers of device types supplied in compliance with MIL-STD-883 and forms the basis for QML
classes Q, V and Y. Appendix B is intended for space application and is required for class V and class Y (class level
S) devices. Appendix C is mandatory for devices requiring radiation hardness assurance (RHA). Appendix D is
mandatory for statistical sampling, life test, and qualification procedures used with microcircuits.
1. SCOPE
1.1 Scope. This specification establishes the general performance requirements for integrated circuits or
microcircuits and the quality and reliability assurance requirements, which are to be met for their acquisition. The
intent of this specification is to allow the device manufacturer the flexibility to implement best commercial practices to
the maximum extent possible while still providing product that meets military performance needs. Detail
requirements, specific characteristics of microcircuits, and other provisions which are sensitive to the particular use
intended will be specified in the device specification. Quality assurance requirements outlined herein are for all
microcircuits built on a manufacturing line which is controlled through a manufacturer's quality management (QM)
program and has been certified and qualified by the Qualifying Activity (QA) in accordance with requirements herein.
Several levels of product assurance including RHA are provided for in this specification. The certification and
qualification sections found herein outline the requirements to be met by a manufacturer to be listed on a Qualified
Manufacturer Listing (QML). After listing of a technology flow on a QML, the manufacturer is to continually meet or
improve the established baseline of certified and qualified procedures, the QM program, the manufacturer's review
system, the status reporting, and quality and reliability assurance requirements for all QML products. The
manufacturer may present alternate methods of addressing the requirements contained in this specification. These
alternate methods will be approved by the Qualifying Activity. This specification requires a manufacturer to establish a
process flow baseline. If sufficient quality and reliability data is available, the manufacturer, through the QM program
and the manufacturer's review system, may modify, substitute, or delete tests. Additional information on the QML
process and its philosophy is available in 6.5 herein. Class T is not for use in National Aeronautics and Space
Administration (NASA) manned, satellite, or launch vehicle programs without written permission from the applicable
NASA project office (e.g., cognizant electrical, electronic, and electromechanical (EEE) parts authority).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
1
MIL-PRF-38535K
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this
document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-M-38510
MIL-PRF-123
- Microcircuits, General Specification For
- Capacitors, Fixed, Ceramic Dielectric (Temperature stable and general purposes),
High Reliability, General Specification For
MIL-PRF-55681 - Capacitors, Chip, Multiple Layers, Fixed, Ceramic Dielectric, Established Reliability and
Non-Established Reliability, General Specification For
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1285
- Test Method Standard Microcircuits
- Marking of Electrical and Electronic Parts
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings
MIL-HDBK-780 - Standard Microcircuit Drawings
MIL-HDBK-1331 - Parameters to be Controlled for the Specification of Microcircuits, Handbook For
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2.2 Other Government documents, drawings, and publications. The following other Government documents, drawings,
and publications form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these
documents are those cited in the solicitation or contract.
QML-38535
Qualified Manufacturers List of Products Qualified Under Performance Specification
MIL-PRF-38535 Integrated Circuits (Microcircuits) Manufacturing, General Specification For
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1269
- Test Methods for Destructive Shear Testing of Ball Bonds.
(Copies of this document are available online at http://www.astm.org/ or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA 19428-2959.)
2
MIL-PRF-38535K
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JESD471
- Symbol & Label for Electrostatic Sensitive Devices.
JEP121
- Requirements for Microelectronic Screening and Test Optimization.
- Accelerated Moisture Resistance - Unbiased Autoclave.
- Highly Accelerated Temperature and Humidity Stress Test (HAST) - biased
- Highly Accelerated Temperature and Humidity Stress Test (HAST) - unbiased
- Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)
- External Visual.
JESD22-A102
JESD22-A110
JESD22-A118
JESD22-A114
JESD22-B101
JESD31
- General Requirements for Distributors of Commercial and Military Semiconductor Devices.
- Requirements for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices.
JESD625
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)
2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this
document and the references cited herein (except for related specification sheets), the text of this document takes
precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has
been obtained.
3. REQUIREMENTS
3.1 General. The manufacturer of QML microcircuits in compliance with this specification shall have or have access to and
use of production and test facilities, and a QM program to assure successful compliance with the provisions of this
specification. All microcircuits manufactured on a QML line shall be processed on a QA certified fabrication line, and shall be
assembled on a QA certified assembly line. All microcircuits shall be electrically capable of meeting parameters over the
specified temperature range in accordance with the device specification in a QA certified test facility. The QML manufacturer
shall be capable of demonstrating their ability to develop hardware and software test programs before delivery of the product.
The QML certification mark (3.6.3) indicates compliance to all the performance provisions of this specification. The
requirements described herein shall be addressed in one of two ways. These are as follows:
a. As specified herein.
b. Demonstration to the qualifying activity (QA) and validation team when applicable, of an alternate method, that assures
at least the same level of quality and reliability as defined by the requirements herein, or demonstration to the QA that
the requirement is not applicable to the manufacturer's technology.
NOTE: A QML manufacturer may modify screening and Technology Conformance Inspection (TCI) requirements of the
device specification or Standard Microcircuit Drawing (SMD) under special criteria defined within this specification and as
defined in the manufacturer's QM plan. (For guidance on screening and QCI optimization see JEP121 - Requirements for
Microelectronic Screening and Test Optimization and J.3.12 herein.) These changes cannot affect any thermal, mechanical,
electrical parameters, or radiation levels (when applicable) which affect form, fit, or function of the device, defined within the
device specification or SMD.
3.1.1 Reference to applicable device specification. For purposes of this specification, when the term "as specified" is used
without additional reference to a specific location or document, the intended reference shall be to the device specification.
3.2 Item requirements. The individual item requirements, including temperature range, for integrated circuits delivered
under this specification shall be documented in the device specification prepared in accordance with 3.5 herein. Devices
produced under this specification may have any operating temperature range (case, ambient, or junction) as long as it is
specified in the device specification, and any references to minimum or maximum operating temperatures shall refer to the
respective lower and upper limits of this range. However, the manufacturer shall demonstrate the operating temperature
range (case, ambient, or junction) capability of the technology being offered. The standard evaluation circuit (SEC) is typically
used for this demonstration.
3
MIL-PRF-38535K
3.2.1 Certification of conformance and acquisition traceability. Manufacturers or suppliers including distributors who offer
QML microcircuits described by this specification shall provide written certification, signed by the corporate officer who has
management responsibility for the production of the QML microcircuits, (1) that the QML microcircuits being supplied have
been manufactured and meet the performance defined in the specification whether or not the actual testing has been
performed, (2) that all QML microcircuits are as described on the certificate of conformance which accompanies the shipment,
and (3) that dealers and distributors have handled the QML microcircuit in accordance with the requirements of JESD625 and
JESD31. The responsible corporate official may, by documented authorization, designate other responsible individuals to sign
the certificate of conformance (such as members of the manufacturer's review system), but, the responsibility for conformity
with the facts shall rest with the responsible corporate officer. The certification shall be confirmed by documentation to the
Government or to users with Government contractors or subcontractors, regardless of whether the QML microcircuits are
acquired directly from the manufacturer or from another source such as a distributor. When other sources are involved, their
acquisition certification shall be in addition to the certificates of conformance and acquisition traceability provided by the
manufacturer and previous distributors. The certificate shall include the following information:
a. Manufacturer documentation:
(1) Manufacturer's name and address.
(2) Customer's or distributor's name and address.
(3) Device type.
(4) Date code and latest re-inspection date, if applicable.
(5) Quantity of devices in shipment from manufacturer.
(6) Statement certifying QML microcircuit conformance and traceability.
(7) Solderability re-inspection date, if applicable.
(8) Signature and date of transaction.
(9) If applicable, the certificate shall include a statement indicating that alternate die/fab requirements are being used
(“QD” certification mark, see 3.6.3).
b. Distributor documentation for each distributor:
(1) Distributor's name and address.
(2) Name and address of customer.
(3) Quantity of devices in shipment.
(4) Latest re-inspection date, if applicable.
(5) Certification that this shipment is a part of the shipment covered by the manufacturer's documentation.
(6) Solderability re-inspection date, if applicable.
(7) Signature and date of transaction.
4
MIL-PRF-38535K
3.3 Quality management (QM) program. A QM program shall be implemented by the manufacturer (see G.3.1).
3.3.1 Manufacturer's review system. The Technology Review Board (TRB) (See G.3.2) shall implement a dedicated
system of review. The TRB shall review, approve and document the implementation of the QM program, as reflected in the
QM plan; maintenance of all certified and qualified processes; process change control; reliability data analysis, failure analysis
(FA), and corrective actions; QML microcircuit recall procedures; and qualification status of the technology.
3.3.2 QM plan. A QM plan reflects the major elements of the manufacturer's QML process (see G.3.3). The QM plan shall
be kept current and up-to-date and shall reflect all major changes. Whenever the TRB makes major changes to the QM plan,
copies of the updated QM plan shall be submitted to the QA for review.
3.3.3 Self-assessment program. The manufacturer’s TRB shall ensure that a self-assessment program is implemented and
perform evaluations on a periodic basis of all areas controlled by the QM Plan. Results of the self-assessment including
corrective actions shall be documented by the TRB and shall be made available for review to the QA (see G.3.1).
3.3.4 Change control procedures. The manufacturer shall have a system that shall provide notification of change that
affects form, fit, function and radiation (when applicable) to all known acquiring activities prior to the release of the affected
product. The manufacturer may make notification of this change of product through the Government-Industry Data Exchange
Program (GIDEP) using the Product Change Notice. In any case, the manufacturer shall assure that all known acquiring
activities are notified. The following processes and procedures shall be addressed (see G.3.4):
a. Design methodology changes.
b. Fabrication process changes.
c. Assembly process changes.
d. Package changes.
e. Test facility changes.
f. Location changes to fabrication, assembly, test, and qualification.
3.3.4.1 Discontinuation of products. The manufacturer shall have a system that provides notification of product
discontinuation which comprises date of discontinuation and last times buy opportunity in advance (at least 6 month in
advance) to the DLA Land and Maritime for purchasing devices.
3.4 Requirements for listing on a QML. To be listed on a QML, the manufacturer shall demonstrate compliance to the QML
certification requirements (see 3.4.1), demonstrate compliance to the QML qualification requirements (see 3.4.2), and work
with the DLA Land and Maritime to develop an SMD describing the candidate QML device(s) (see 3.5). An existing MIL-M-
38510 device specification may be used. The QA shall verify compliance to the requirements and shall list the manufacturer's
technology on the QML.
5
MIL-PRF-38535K
3.4.1 QML certification requirements. The manufacturers shall meet the minimum procedures and requirements in this
section for QML certification of a manufacturing line. The QA shall determine adequacy and compliance to the requirements
as specified herein and shall report their findings and recommendations in writing to the manufacturer's TRB. Each portion of
a QML microcircuit manufacturer's line capability, including any offshore operations, may be demonstrated independently, but
validation by the QA shall assess a complete technology flow. To maintain certification the manufacturer shall provide
notification of change to the process baseline to the QA. For generic qualification procedures, certification shall consist of:
a. QM program documentation (see G.3.1).
b. Process capability demonstration for certification (see 3.4.1.1 and H.3.2).
c. QA management and technology validation (see 3.4.1.2).
d. All procedures used to manufacture masks for monolithic fabrication (see appendix H).
3.4.1.1 Process capability demonstration. As part of certification, the manufacturer shall build devices, perform tests and
run software benchmarks necessary to demonstrate that the manufacturer has a comprehension of the capability of the
manufacturing process as related to quality, reliability and producibility. The summary of the results of all of these tests shall
be available for review by the QA (prior to scheduling a validation review). These tests shall be designed to be used as a
continual check of the process capability as well as an initial demonstration of such capability. The TRB shall determine when
such tests are to be performed after initial certification.
Process capability demonstration shall consist of:
a. Design.
(1) Circuit.
(2) Package.
b. Wafer fabrication.
c. Statistical process control (SPC) and in-process monitoring programs including the technology characterization
vehicle (TCV) program, the SEC, and parametric monitors (PMs) (see appendix H).
d. Wafer acceptance plan.
e. Assembly and packaging.
f. RHA (see appendix C).
g. Testing (Wafer and Packaged level, as applicable).
3.4.1.1.1 New technology insertion. The supplier shall establish a new technology insertion program for the identification,
management, and tracking of new technology. The program shall include a plan that defines the new technology, and the
criteria and methodology for characterization and qualification of new technology. It shall also include the specific details of
determining the potential failure mechanisms and activation energies and their respective mitigation strategies. The new
technology insertion program, plan and methods shall be reviewed by the qualifying activity.
6
MIL-PRF-38535K
3.4.1.2 Management and technology validation. The validation by the QA shall include, as a minimum, the following
applicable areas of each of the manufacturer's facilities including second and third party facilities: Management quality
assurance, design, mask, wafer fabrication, assembly and package, and electrical environmental and radiation test, when
applicable. This validation procedure shall involve a QA review of the manufacturer's QM plan, self-validation and an on-site
visit of the manufacturer's fabrication, assembly, test and other facilities as necessary.
3.4.1.3 On-site validation. Manufacturer shall make available to the QA all data needed to support QM policy and
procedures. QA access to manufacturing (fab and assembly) , testing facilities and operators including offshore shall be
required. For first time QML supplier certification, an on-site QA validation review of the manufacturer's design, wafer
fabrication, assembly, and test facilities shall be required. After the initial qualification is accomplished and with the approval
of the Qualifying Activity, an established manufacturer may add other design, wafer fabrication, assembly, and test facilities
upon completion of the appropriate qualification testing, and a TRB self-assessment and approval. The QA reserves the right
to perform on-site reviews of any facilities/technologies that the manufacturer plans to add to their QML listing. Validation of
third party suppliers is the responsibility of the manufacturer.
3.4.1.3.1 Second and third party validations. A QML certified manufacturer may use second party facilities with the
approval of the QA. A second party facility shall be a QML certified manufacturer facility or a facility that has been granted
approval by the QA for the manufacture or test of QML product. The QA is responsible for the initial and periodic validation of
second party facilities. The process used by the manufacturer’s TRB to initially validate, and to periodically revalidate, a third
party facility shall be reviewed during the initial QML validation process. For third party facilities the QA shall make a
determination whether an onsite certification is required for class level S product. The QA reserves the right to visit third party
facilities to verify that the manufacturer's on-going validation process is effective.
3.4.1.3.2 Radiation source of supply (RSS) validations. An RSS shall receive a QML validation for all processes listed in
this specification and the RSS's program plan. This includes a QML validation of the manufacturing process and laboratory
suitability of the RHA test facilities.
3.4.1.4 Technology validation. The manufacturer's technology flow shall be reviewed and approved by the QA. Some
critical areas which shall be assessed by the QA, as applicable during the validation, are:
a. Design center procedures.
b. Design review procedures.
c. Model verification.
d. Software configuration and configuration management.
e. Testability procedures and policies (e.g., Joint Test Action Group (JTAG)) as applicable.
f. Archival system (e.g., very high speed integrated circuit (VHSIC) hardware description language (VHDL)).
g. Mask validation/inspection procedures.
h. TCV, SEC, PM tests, and data.
i. Fabrication rework procedures.
j. SPC program (all areas).
k. Design rule documentation.
l. Clean room procedures.
m. Wafer traceability.
n. Gallium Arsenide (GaAs) wafer boule evaluation procedure.
7
MIL-PRF-38535K
o. Assembly rework procedure.
p. Die attach procedures.
q. Wire/ribbon bonding.
r. Device traceability and travelers.
s. Lot formation (wafer, device and inspection).
t. Assembly area environmental control.
u. Internal moisture vapor control program.
v. Electrostatic discharge (ESD) control and testing.
w. Visual inspection.
x. Human contamination prevention procedures.
y. Equipment calibration and maintenance.
z. Training policy and procedures.
aa. Electrical test procedures.
bb. Screening procedure.
cc. TCI procedures.
dd. Third party design center procedures.
ee. Change control procedure.
ff.
Chip encapsulation/molding.
gg. Qualification test plan.
hh. Characterization procedures.
ii.
jj.
Selection of suppliers.
New technology/materials evaluation.
kk. Package integrity demonstration test plan (PIDTP).
3.4.1.4.1 Package design selection reviews. The manufacturer shall establish and implement systematic package design
or selection reviews to ascertain compatibility of chip(s) and packages with respect to thermal, electrical and mechanical
performance and manufacturing, testing, and reliability requirements. Manufacturer’s package element material and finish
shall be in accordance with A.3.5.6 unless otherwise specified in the manufacturer’s QM plan.
8
MIL-PRF-38535K
3.4.1.5 Manufacturer self-validation. The manufacturer shall perform a self-validation to determine compliance to the QM
plan (see appendix G).
3.4.1.6 Change management system. The manufacturer shall have a system for change management. This system shall
include a process to monitor internal changes and the assessment of those changes as to the impact to customers. The
manufacturer shall analyze the impact of major changes and its effects on previously approved modifications of test (see
J.3.12). An appropriate customer notification methodology shall be in place.
3.4.1.7 Deficiencies and concerns. Deficiencies and concerns shall be noted by the validation team during an exit critique
and shall be followed up with a written report. The microcircuit manufacturer shall not receive a letter of certification until all
certification requirements are met.
3.4.1.8 Letter of certification. After validation, the QA shall issue a letter of certification to the manufacturer, which shall
include all certified site(s).
3.4.2 QML qualification requirements. Integrated circuits (ICs) furnished under this specification shall be products which are
authorized by the QA for listing on the QML. Qualification testing shall be performed in accordance with the agreed upon
qualification plan (see appendix H).
3.4.2.1 Qualification extension. When a basic plant desires to qualify a device or process flow that includes an offshore
site, application for certification and qualification may be extended with QA approval under the following conditions:
a. Control and approval of the design, fab, assembly and test operations by the manufacturer’s TRB is required along
with periodic self-assessments of the offshore sites. The manufacturer’s TRB shall review all screening and TCI tests
to determine whether they should be performed exclusively in the offshore site or reserved for the basic plant in order
to assure quality and reliability. The manufacturer’s TRB assessment shall be made available to the QA for review or
approval as appropriate.
b. QA certification of the offshore site is required. For classes Q, V, Y, N and T products all operations, sites, and plants
shall be QA certified however, this certification may be issued through the manufacturer’s TRB with QA approval.
Validation of these offshore operations is also required. For assembly site(s) an initial site shall be certified and
qualified by the QA. Additional assembly sites shall be assessed subsequent to the initial validation.
c. All devices assembled in the offshore assembly site shall have a country of origin marking (see 3.6.5) reflecting the
assembly site. In addition, a unique code shall be marked on each device to assure traceability to the assembly
site(s).
d. All operations, flows, quality control procedures and test standards at the offshore site shall be under the control of the
manufacturer’s TRB. Alternately, the manufacturer shall establish a procedure for maintaining oversight of the
offshore facility. All such operations, flows, procedures and test standards shall be baselined by the manufacturer’s
TRB and the offshore site at all times.
e. The QA reserves the right to audit the offshore site(s) with a minimum notice. The basic plant site shall be responsible
to facilitate all QA site assessments. Any refusal to allow such a site assessment may result in an immediate
de-certification and QML removal.
9
MIL-PRF-38535K
3.4.3 Qualification to RHA levels. Qualification to a RHA level shall consist of characterization to the highest offered RHA
level of total ionizing dose (TID). The conditions for radiation testing shall consist of exposing the devices in a step-stress
manner to the highest dose level offered and as a minimum the two next consecutive lower RHA levels. The levels are
identified as follows: 3K Rad(Si), 10K Rad(Si), 30K Rad(Si), 50K Rad(Si), 100 K Rad(Si), 300K Rad(Si), 500K Rad(Si), 1M
Rad(Si). The radiation testing plan (QM Plan) and qualification to the appropriate quality and reliability assurance level for
device classes B, Q, S, V, Y or T shall be submitted for QA approval. The designator RHA levels are defined below:
RHA levels:
RHA level designator
Total ionizing dose (TID) level in Rad (Si)
(see 3.6.2.1)
/ or -
M
D
No RHA
3x103
10x103
30x103
50x103
100x103
300x103
500x103
106
P
L
R
F
G
H
3.4.4 QML listing. A certificate of qualification shall be issued upon successful completion of all qualification tests on the
two demonstration vehicles and the acceptance of the qualification documentation by the QA. Issuance of the certificate of
qualification shall coincide with listing of the manufacturing line and the SMD(s), or existing MIL-M-38510 device
specification(s) on the QML. The manufacturer may be removed from the QML by the QA for cause.
3.4.5 Maintenance and retention of QML. In order to sustain qualification status after initial qualification, the manufacturer
shall fabricate and perform qualification testing on the selected SEC and TCV, or approved alternate assessment procedure
as defined in the QM plan.
3.4.6 QML line shutdown. If an extended shutdown of a QML certified/qualified flow is necessary, the TRB shall assess and
ensure that the process is still capable when production is restarted and notify the QA.
3.4.7 Revalidation reviews. The interval between on-site revalidation reviews shall normally not exceed two years, but the
QA shall adjust this interval based on the manufacturer's TRB reports, customer feedback, and other indications of the
manufacturer's maintenance of the QML system.
3.4.8 Performance requirements for class T devices. The manufacturer of a class T device shall be a certified and qualified
QML manufacturer approved by the QA. The class T devices shall be manufactured on a certified and qualified QML line as
defined in 3.4 herein. The class T flow shall be developed and approved through the manufacturer’s TRB; shall be qualified;
shall be defined in the manufacturer’s QM plan; and be approved by the QA. Each technology flow (e.g., wafer fabrication,
assembly, screening, qualification, TCI, etc.) shall be developed and documented taking into account the application
requirements of the customers. The device manufacturer shall demonstrate that the failure mode and mechanisms of the
technologies are considered when developing the technology flow. Copies of each technology flow, including supporting
documentation, shall be reviewed and approved by the QA prior to listing as an approved source of supply. Any modification
to the approved technology flow shall be reviewed and approved by the TRB and the QA. The technology flow and supporting
documentation shall be made available to the systems manufacturers, the Government, and customers for review. The
customer shall be notified of major changes which affect form, fit, or function of the device defined within the device
specification and the manufacturer’s QM plan. Class T is not for use in NASA manned, satellite, or launch vehicle programs
without written permission from the applicable NASA Project Office (e.g., cognizant EEE parts authority).
10
MIL-PRF-38535K
3.4.8.1 Class T radiation requirements. The device specification shall define all the radiation features offered by the QML
manufacturer for the class T device. QML manufacturers supplying class T devices shall meet the requirements of TM 1019 of
MIL-STD-883 and shall document in the QM plan the RHA level specified for the device offered. All devices supplied to this
product class shall be marked with a RHA designator as specified in 3.4.3 herein. Traceability shall be established such that
there is a technical basis for compliance to the specified RHA level designator as marked on the device.
3.5 Device specification. MIL-HDBK-780 details the SMD format to be used (SMD's are to be used except where the
device specification is a MIL-M-38510 device specification or an altered item drawing is required by the device specification or
SMD) and data requirements to be submitted with any device procured under this specification. The QML certification mark
shall not be used until the device specification is approved (see 3.6.3).
3.6 Marking of microcircuits. Marking of QML microcircuits shall be in accordance with the following and the identification
and marking provisions of the device specification or drawing. The marking shall be legible and complete. If any special
marking (e.g., altered item drawing number) is used by the device supplier or user/equipment contractor, it shall be in addition
to the existing/original marking as required herein and shall be visibly separate from and in no way interfere with the marking
required herein. The following shall be placed on each microcircuit:
a. Index point (see 3.6.1).
b. Part or identification number (PIN) (see 3.6.2).
c. Certification mark "Q", or "QML" or “QD”: All Microcircuits acquired to, and meeting the requirements of this
specification and the applicable SMD, device specification, or military temperature range data book parts, which are
approved for supply under QML shall bear the "QML" or "Q" certification mark (see 3.6.3). For diminishing
manufacturing sources (DMS) product using the alternate die/fabrication requirements of A.3.2.2 or other alternatives,
the manufacturer shall use the “QD” certification mark in lieu of the “Q” or “QML” mark (see 3.6.3.1). The certification
marks “Q", or "QML" or “QD” shall be visibly separate and distinct from all other markings on the microcircuits
package.
d. Manufacturer's identification (see 3.6.4).
e. Country of origin (see 3.6.5).
f. Date code (see 3.6.6).
g. Special marking (see 3.6.7).
h. Serialization; when specified by the procuring activity, each microcircuit shall be marked with a unique serial
number assigned within that inspection lot prior to the first recorded electrical measurement in screening.
i. Electrostatic discharge sensitivity identifier, if applicable (see 3.6.7.2).
NOTE: For unpackaged die only items b. through i. shall apply and be marked on the wafer or die carrier and any other
container external to the wafer or die carrier. For tape automated bonded (TAB) (see appendix F) device marking shall be as
defined in the procurement document.
3.6.1 Index point. The index point, tab, or other marking indicating the starting point for numbering of leads or for
mechanical orientation shall be as specified in the device specification and shall be designed so that it is visible from above
when the microcircuit is installed in its normal mounting configuration. The outline, or solid equilateral triangle(s), which are
used as an electrostatic identifier (see 3.6.7.2), may also be used as the pin 1 identifier.
11
MIL-PRF-38535K
3.6.2 Part or identification number (PIN). Each QML microcircuit shall be marked with the complete PIN. The PIN may be
marked on more than one line provided the PIN is continuous except where it "breaks" from one line to another. As of revision
B of MIL-PRF-38535, several types of documents are acceptable for use when specifying QML microcircuits. They are MIL-M-
38510 device specifications and SMD. The PIN marked on those parts under QML shall be the same as when supplied by the
manufacturer prior to being listed on the QML-38535. The "Q" or "QML" designator combined with the listing of that PIN on a
particular vendors QML listing shall indicate the fact that the manufacturer of the device is QML certified and qualified for the
processes used to build that product. The PIN system shall be of one of the following forms, as applicable to the SMD or MIL-
M-38510 device specification used for production:
a. SMD PINs shall be as follows:
5962 1/
- or M,D,P,L,R,F,G,H
XXXXX
ZZ 2/
M,N,Q,V,T,Y 3/
Y
Y
Federal
stock class
designator
RHA
designator
(see 3.6.2.1)
Drawing
designator
(see 3.6.2.2)
Device
type
Device
class
designator
(see 3.6.2.3)
Case
outline
Lead
finish
designator designator
(see 3.6.2.4) (see 3.6.2.5)
SMD number
For packages where marking of the entire SMD PIN and all other required topside markings are not possible due to space
limitations, the manufacturer has the option of leaving the “5962-“ off the marking. The allowance for optional marking will be
indicated in the individual SMD. For RHA product using this option, the RHA designator shall still be marked.
b. Device specification documents, originally published prior to 27 July 1990, shall be as follows:
M38510
H or /
XXX
ZZ 2/
B or S
Y
Y
Military
designator
RHA
designator
Device
specification
Device
type
Device
class
Case
outline
Lead
finish
(see 3.6.2.2.1) (see 3.6.2.1)
designator
designator
designator (see 3.6.2.5)
(see 3.6.2.3) (see 3.6.2.4)
All new PINs specified by new documents, originally published after 27 July 1990, shall be in accordance with the one part-one
part number system.
All PINs specified by existing device specifications with the number assigned prior to 27 July 1990, may use either the original
assigned PIN or the one part one-part number system with the first two digits in the drawing designator being "38" and the last
three being the device specification number (e.g., M38510/00101BAC shall become 5962-3800101BAC).
________
1/ Drawings initiated prior to 1986 may not contain a federal stock class designator.
2/ Low dose rate sensitivity shall be indicated in the device specification for those devices that are susceptible to enhanced
low dose rate sensitivity (ELDRS) effects. For device type series that are marked 61, 62, 63, and so forth, the designator
shall indicate that the device has been characterized/tested for ELDRS and is ELDRS sensitive.
3/ Non one-part SMDs do not contain a device class designator. See MIL-HDBK-103 for qualification information. Prior MIL-
M-38510 device specifications converted to SMDs shall contain a B or S class designator.
12
MIL-PRF-38535K
3.6.2.1 RHA designator. A "- or /" indicates no radiation hardness assurance. Letters M, D, P, L, R, F, G, or H designations
are defined RHA level in (rad(Si)) (see 3.4.3.).
3.6.2.2 Drawing designator. The first two characters of the designator shall consist of the last two digits of the year; the last
three characters shall consist of unique characters assigned to the drawing by DLA Land and Maritime.
3.6.2.2.1 Military designator. The M38510 military designator for microcircuits means a "MIL" specification item produced in
full compliance with this specification including qualification, and the device specification. Any device which does not meet all
the requirements of this specification and the device specification shall not be marked M38510 and shall not make reference to
MIL-PRF-38535.
NOTE: The military designator is optional for leadless chip carrier outlines that have a surface area smaller than the C-10
package.
3.6.2.3 Device class designator. The device class shall be designated by a single letter identifying the quality assurance
level. For example:
Example PIN
under new system
Manufacturing
source listing
Document
listing
Military documentation format
MIL-PRF-38535
SMDs
5962-XXXXXZZ(M, N, Q, V, Y, T (B or S))YY QML-38535
(see 6.4.27 through 6.4.34)
MIL-HDBK-103
MIL-HDBK-103
1.2.1 of MIL-STD-883
SMDs
5962-XXXXXZZ(M)YY
MIL-HDBK-103
(see 6.4.27 through 6.4.33)
3.6.2.4 Case outline. The case outline shall be designated by a single letter assigned to each outline within each device
specification.
3.6.2.5 Lead finish. The lead finish (see A.3.5.6.3.2) shall be designated by a single letter as follows:
Finish letter
Process
A
B
C
D
E
F
Hot solder dip
Tin-lead plate
Gold plate
Palladium
Gold flash palladium
Tin-lead alloy as defined in the applicable device document.
Either A, B, or C (mark on specification only)
X
NOTE: Lead finishes D and E are equivalent, and one may be substituted for the other, at the manufacturer’s option.
3.6.3 Certification mark. All microcircuits acquired to and meeting the requirements of this specification and the applicable
SMD, device specification, or military temperature range data book parts, which are approved for supply under QML, shall
bear the "QML" or "Q" certification mark. The certification marks “Q", or "QML" shall be visibly separate and distinct from all
other markings on microcircuits package.
3.6.3.1 “QD” certification mark. QML manufacturers shall request QA approval for diminishing manufacturing sources
(DMS) product using the alternate die/fabrication requirements of A.3.2.2 or other alternatives. Upon approval the
manufacturer shall use the “QD” certification mark in lieu of the “Q” or “QML” mark. The certification mark “QD” shall be visibly
separate and distinct from all other markings on microcircuits package.
13
MIL-PRF-38535K
3.6.3.2 “JAN” or “J” mark. The "J" marking is a legacy certification mark that was required by MIL-M-38510 device
specifications and qualified on a QPL part by part basis. Since the “J” is often mistakenly considered part of the PIN, it may
continue to be marked in front of the military designator portion of the device specification part number at the QML vendor’s
option. This "J" was not and shall not be considered an element of the official part number used to assign a national stock
number.
3.6.4 Manufacturer's identification. Microcircuits shall, as a minimum, identify the manufacturer by the marking of name or
trademark of the manufacturer or the manufacturer may also mark the manufacturer's Commercial and Government Entity
(CAGE) code. The identification of the equipment manufacturer may appear on the microcircuit only if the equipment
manufacturer is also the microcircuit manufacturer. If the microcircuit manufacturer's designating symbol or CAGE code
number is marked, it shall be as assigned by the Defense Logistics Information Service (DLIS). The designating symbol shall
be used only by the manufacturer to whom it has been assigned and only on those devices manufactured at that
manufacturer's plant. In the case of small microcircuits, the manufacturer's designating symbol may be abbreviated by
omitting the first "C" in the series of letters.
3.6.4.1 Code for assembly sites. If the manufacturer has more than one offshore facility for assembly in a given country, a
unique single letter code shall be assigned for the assembly sites used. This code shall be marked on the device immediately
preceding or immediately after the date code. The assembly codes and the full address shall be included in the QML.
3.6.5 Country of origin. The name of the country of assembly or an appropriate abbreviation shall be marked in small
characters below or adjacent to the other marking specified. Backside marking of the country of origin information is
permitted.
3.6.6 Date code. Microcircuits shall be marked with a unique code to identify the first or the last week of the period (6
weeks maximum) during which devices in that inspection lot were sealed. The first two numbers in the code shall be the last
two digits of the number of the year, and the third and fourth numbers shall be two digits indicating the calendar week of the
year.
3.6.7 Marking location and sequence. The QML certification mark, the PIN, the date code, and ESD identifier, if applicable
(see 3.6.7.2), shall be located on the top surface of leadless or leaded chip carriers, pin grid array packages, flat packages or
dual-in-line configurations and on either the top or the side of cylindrical packages (TO configurations and similar
configurations). When the size of a package is insufficient to allow marking of special process identifiers on the top surface,
the backside of the package may be used for these markings except the ESD identifier, if applicable, which shall be marked on
the top. Button cap flat packs with less than or equal to 16 leads may have the identifier marked on the ceramic. Backside
marking with conductive or resistive ink shall be prohibited. For unpackaged die, marking is to be located on the container.
3.6.7.1 Beryllium oxide package identifier. If a microcircuit package contains beryllium oxide, the part shall be marked with
the designation "BeO".
3.6.7.2 Electrostatic discharge (ESD) sensitivity identifier. Individual microcircuit ESD classification marking is not required.
The manufacturer shall have an option of no ESD marking, marking a single ESD triangle or marking in accordance with the
ESD device classification defined in test method (TM) 3015 of MIL-STD-883. Because it may no longer be possible to
determine the ESD classification from the part marking, the Device Discharge Sensitivity classification shall have to be
obtained through MIL-HDBK-103 or QML-38535.
14
MIL-PRF-38535K
3.6.8 QML marked product. For QML certified and qualified manufacturers and manufacturers who have been granted
transitional certification (see H.3.3), standard product (Joint Army Navy (JAN), class M SMDs, and military temperature range
class B data book product), produced on a QML flow may be marked with the "Q" or "QML" certification mark. This allowance
applies to contractor prepared drawings covering standard product only if the drawing was released prior to 31 December
1993 or the date the manufacturer becomes QML whichever is the later date, and the part is marked with the standard part
number. A list of the manufacturer's military temperature range product to be included under QML shall be submitted to the
QA for approval. Contractor prepared drawings written for nonstandard parts may not be marked with a "Q" or "QML". The
only exception to this requirement is an altered item drawing required by a device specification or SMD.
Only parts covered by a MIL-M-38510 device specification, an SMD, or generic parts that have been grandfathered (a list of
eligible devices shall be submitted to DLA Land and Maritime-VA or DLA Land and Maritime-VQ for review) shall be listed on
QML-38535. After 31 December 93, new QML products, which are marked with a "Q" or "QML" certification mark, shall be
documented on an SMD (see 3.5). Any device that is not processed in compliance with the provisions of MIL-PRF-38535 shall
not be claimed to be compliant. Non-compliant products shall not contain “QML”, “QML V”, “QML Y” or any variant thereof
within the vendor part number or within any marking located on the package.
3.6.9 Marking on container. All of the markings specified in 3.6, except the index point, shall appear on the die
container/package (e.g., waffle pack, etc.), carrier, unit pack (e.g., individual foil bag), unit container, or multiple carriers (e.g.,
tubes, rails, magazines) for delivery. For ESD sensitive devices, an industry standard symbol used to identify ESD sensitivity
(e.g., JESD471 symbol) shall be marked on the carrier or container. However, if all the marking specified above is clearly
visible on the devices and legible through the unit carrier or multiple carriers, or both, then the ESD marking only (MIL-STD-
1285) shall be required on the multiple carriers. These requirements apply to the original or repackaged QML microcircuits by
the manufacturer or distributor.
3.7 Remarking. QML microcircuits may be remarked provided that all remarking procedures are approved by the TRB.
Remarking shall be in accordance with 3.6 herein.
3.8 Screening and test. All microcircuits delivered in accordance with this specification shall meet the screening and testing
requirements of 4.2 herein whether or not the actual testing has been performed.
3.9 Technology conformance inspection (TCI). All microcircuits delivered in accordance with this specification shall meet
the TCI requirements of 4.3 herein whether or not the actual testing has been performed.
3.9.1 TCI assessment. In the event the TRB determines that the TCI requirements are not met, the TRB shall notify the
Qualifying Activity (QA) immediately, a list of the product shall be generated by the TRB, and the qualifying activity shall be
notified of the decision.
3.10 Solderability. All parts shall be capable of passing the solderability test in accordance with TM 2003 of MIL-STD-
883, on delivery.
3.11 Traceability. Traceability to the wafer lot level (for GaAs to wafer level) shall be provided for all delivered microcircuits.
Traceability includes, as a minimum, the completion of each step required in design (when applicable), fabrication, assembly,
test and any applicable qualified rework procedure.
3.12 ESD control. QML microcircuits shall be handled in accordance with JESD625 or other industry standard practices, to
safeguard against discharge damage.
3.13 Recycled, recovered, or environmentally preferable materials. Recycled, recovered, or environmentally preferable
materials should be used to the maximum extent possible provided that the material meets or exceeds the operational and
maintenance requirements, and promotes economically advantageous life cycle costs.
15
MIL-PRF-38535K
3.14 Alternate test requirements. The manufacturer shall follow the test method requirements per MIL-PRF-38535 or TM
5004/5005 of MIL-STD-883. Upon approval from QA, as an option the manufacturer may follow TM 5004/5005 of MIL-STD-
883 versus MIL-PRF-38535 test method. The manufacturer shall not be allowed to switch back and forth between TM
5004/5005 of MIL-STD-883 and MIL-PRF-38535 test method.
3.15 Passive elements. Passive elements are restricted to capacitors. Passive elements that are internally or externally
utilized as an integral part of QML microcircuits shall meet the requirements of the following subparagraph. The microcircuits
utilizing these passive elements shall be manufactured, processed, and verified to meet the requirements of this specification.
The use of passive elements shall be documented on the applicable device specification and shall include, but not be limited
to, the type of element, the value and ratings of the element, the governing specification for the element, and other information
necessary to positively identify the element.
3.15.1 Capacitors. Discrete capacitors, that are included as integral parts of the microcircuit design shall be used to
improve the microcircuit performance in areas of decoupling, signal conditioning, or noise conditioning and radiation hardened
assurance performance. Discrete capacitors that are internally or externally utilized as part of QML microcircuits shall meet
the following requirements: For class Q microcircuits, the capacitors shall either meet the requirements of MIL-PRF-55681
(“S” failure rate level) or be approved for use by the Qualifying Activity (QA). For class V or class Y (class level S)
microcircuits, the capacitors shall meet or exceed the requirements of MIL-PRF-123 or be approved for use by the qualifying
activity. The microcircuit manufacturer shall document in their QM plan the processes used concerning the capacitors. This
shall include, but not be limited to, inspection, assembly including attach procedures, testing including final electrical and
groups A, D, and E.
16
MIL-PRF-38535K
4. VERIFICATION
4.1 Verification. A verification system shall be in place to verify the requirements of section 3 in accordance with
appendix J. Any screen or TCI test prescribed herein may be reduced, modified, moved, or eliminated by the QML
manufacturer provided the product is still capable of meeting the screening and TCI testing groups A, B, C, D, and E for the
applicable detail specification as approved by the QA.
4.2 Screening. All QML integrated circuits shall meet the requirements of the screens specified in tables IA and IB herein of
the specification whether or not the actual testing has been performed. The procedures and accept and reject criteria for the
screens shall have been certified by the QA. With QA approval the requirements of test method 5004 of MIL-STD-883 may be
substituted for the screening requirements herein. When using TM 5004, class Q shall meet the requirements of the class
level B screening flow whether or not the actual testing has been performed and class V and class Y shall meet the
requirements of the class level S screening flow and appendix B herein whether or not the actual testing has been performed.
The manufacturer, through its TRB, shall identify which tests are applicable to guarantee the quality and reliability of the
associated technology or end product (e.g., wafer or die product, packaged product, plastic, etc.). The manufacturer may elect
to eliminate or modify a screen based on supporting data that indicates that for the QML technology, the change is justified
(see J.3.12 herein). If such a change is implemented, the manufacturer is still responsible for providing product that meets all
of the performance, quality, and reliability requirements herein.
4.2.1 Screen testing failures. Devices that fail any screen test shall be identified, segregated, or removed.
4.2.2 Screening resubmission criteria. When it has been established that a failure during screening tests is due to operator
error or equipment failure and it has been established that the remaining QML microcircuits have not been damaged or
degraded, the surviving microcircuits, may be resubmitted to the corrected screening test(s) in which the error occurred.
Failures verified as having been caused by test equipment failure or operator error shall not be counted in the percent
defective allowable (PDA) calculation (when applicable). ESD failures shall be counted as rejects and shall not be attributed to
equipment failure or operator error.
4.2.3 Electrostatic discharge (ESD) sensitivity. ESD sensitivity testing shall be done in accordance with TM 3015 of
MIL-STD-883 and the device specification. The testing procedure defined within JESD22-A114 may be used as an option in
lieu of TM 3015 provided the manufacturer is able to demonstrate correlation between the two methods. In addition, the
reported sensitivity classification levels shall be the ones defined within TM 3015 of MIL-STD-883 (see 3.6.7.2). In addition,
unless otherwise specified, tests shall be performed for initial qualification and product redesign as a minimum.
4.3 Technology conformance inspection (TCI). All product shipped shall be capable of passing TCI in accordance with
tables II, III, IV, and V; for plastic packages see table IB herein. With QA approval when TM 5005 of MIL-STD-883 is used as
a TCI option, class Q shall be capable of passing the class level B flow. Both class V and class Y shall be capable of passing
the flow of class level S and Appendix B herein. When selecting the TM 5005 TCI option for class V and class Y, the group B
end-point electricals shall be the same as the group C end-point electricals, unless otherwise specified in the acquisition
document. TCI testing shall be accomplished by the manufacturer on a periodic basis to assure that the manufacturer's
quality, reliability, and performance capabilities meet the requirements of the QM plan (see G.3.3). Where appropriate, as an
option, in place of the fixed sample size (Acceptance number) the manufacturer may use the sample size series (SSS) plan of
appendix D.
4.4 Qualification inspection. Qualification inspection shall be performed in accordance with H.3.4.
17
MIL-PRF-38535K
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits.
MIL-STD-883, test method (TM) and conditions
Screening Tests
Class Q
Class V
Class Y
(class level B)
(class level S)
(class level S)
1. Wafer lot acceptance test
QM plan (see H.3.2.1.4) 1/
QM plan (see H.3.2.1.4) 1/
QM plan
(see H.3.2.1.4) 1/
or
or
TM 5007 of MIL-STD-883
(all lots)
TM 5007 of MIL-STD-883
(all lots)
2. Nondestructive bond pull (NDBP) test
2/
TM 2023
TM 2023
TM 2010, condition B
TM 2010, condition A
TM 2010, condition A
3. Internal visual inspection
3/
4. Temperature cycling
4/
TM 1010, condition C,
10 cycles minimum
TM 1010, condition C,
10 cycles minimum
TM 1010, condition C,
10 cycles minimum
5. Constant acceleration 5/
TM 2001, condition E
(minimum), Y1 orientation
only
TM 2001, condition E
(minimum), Y1 orientation
only
TM 2001, condition E
(minimum), Y1 orientation
only
6. Visual inspection
6/
100%
100%
100%
7. Particle Impact Noise Detection
TM 2020, test condition A
on each device
TM 2020, test condition A
on each device
(PIND) test
7/ 8/
9/
8. Serialization
In accordance with device In accordance with device
specification (100%) specification (100%)
In accordance with device
specification (100%)
9. Pre burn-in (Interim) electrical
In accordance with device In accordance with device
In accordance with device
specification 12/
parameters test
10/
specification 11/
specification 12/
10. Burn-in test:
10/ 13/ 14/
TM 1015
160 hours at +125°C
minimum
TM 1015
240 hours at 125°C,
condition D 15/
TM 1015
240 hours at 125°C ,
condition D 15/
11. Post burn-in (Interim) electrical
parameters test 10/
In accordance with device
specification 12/
In accordance with device
specification 12/
12. Reverse bias burn-in test
(Static burn-in)
TM 1015, Condition A or C;
144 hours at +125°C or
TM 1015, Condition A or C;
144 hours at +125°C or
13/ 14/ 16/
72 hours at +150°C minimum 72 hours at +150°C minimum
13. Post burn-in (Interim-reverse bias)
electrical parameters test 10/
In accordance with device
specification 12/
In accordance with device
specification 12/
18
MIL-PRF-38535K
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits - Continued.
MIL-STD-883, test method (TM) and conditions
Screening Tests
Class Q
Class V
Class Y
(class level B)
(class level S)
(class level S)
14. Percent defective allowable (PDA)
5 percent PDA
(all lots)
5 percent PDA,
3 percent PDA for functional 3 percent PDA for functional
5 percent PDA,
calculation
17/
parameters at 25°C
(all lots)
parameters at 25°C
(all lots)
In accordance with
applicable device
specification
In accordance with
applicable device
specification
In accordance with
applicable device
specification
15. Final electrical tests 18/
(see table III)
a. Static test :
(see group A test)
(see group A test)
(see group A test)
(1) at 25°C
(2) Maximum and Minimum
operating temperature
b. Dynamic or functional test : 19/
(1) at 25°C
(2) Maximum and Minimum
operating temperature
c. Switching test :
(1) at 25°C
(2) Maximum and Minimum
operated temperature
16. Seal test
a. Fine leak
20/
TM 1014
TM 2009
TM 1014
Not applicable
b. Gross leak
17. Radiographic (X-ray) and/or
X-ray: TM 2012, Two views;
C-SAM TM 2030
X-ray: TM 2012, Two views;
C-SAM TM 2030
C-SAM test
21/
18. External visual inspection
22/ 23/
TM 2009
TM 2009
19. Qualification or quality conformance
inspection/TCI test sample selection
24/
24/
24/
20. Radiation dose rate induced
TM 1020
TM 1020
TM 1020
latch-up test
25/
Note: The screening and QCI/TCI tables from MIL-PRF-38535 and MIL-STD-883 Test Methods 5004 and 5005 have been
combined for consistency. A future revision of MIL-STD-883 will reflect this change as well. Manufacturers shall document in
their QM plan the screening and QCI/TCI requirements to either MIL-PRF-38535 or MIL-STD-883.
19
MIL-PRF-38535K
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits - Continued.
1/ Testing per manufacturer’s QM plan. See paragraph H.3.2.1.4 of MIL-PRF-38535 or TM 5007 of MIL-STD-883.
2/ For flip chip packages Nondestructive bond pull (NDBP) test is not required.
3/ Unless otherwise specified, at the manufacturer's option for test samples selection of group B, bond strength test (method 5005) may
be randomly selected prior to or following internal visual (method 5004), prior to sealing provided all other specification requirements
are satisfied (e.g., bond strength requirements shall apply to each inspection lot, bond failures shall be counted even if the bond
would have failed internal visual exam), and unsealed microcircuits awaiting further processing shall be stored in a dry, inert,
controller environment until sealed. Test method 2010 applies in full except when method 5004, alternate 1 or alternate 2 (appendix
A) is in effect (see 3.3 method 5004 of MIL-STD-883). For gallium arsenide (GaAs) devices only, TM 5013 of MIL-STD-883 should be
used. For flip chip devices, both internal visual and C-SAM inspection (such as prior to bump attach to die and after bump attach to
substrate and underfill cured etc.) shall be performed in accordance with TM 2010 and TM 2030.
4/ For devices with solder terminations, Temperature cycling test may be performed without balls and columns upon approval of PIDTP
and QM plan.
5/ All microcircuits shall be subjected to constant acceleration. For microcircuits which are contained in packages that have an
inner seal or cavity perimeter of 2 inches or more in total length or have a package mass of 5 grams or more may be tested by
replacing test condition E with condition D or with test conditions as specified in the applicable device specification. Unless
otherwise specified in the acquisition document, the stress level for large, monolithic microcircuit packages shall not be reduced
below test condition D. If the stress level specified is below condition D, the manufacturer must have data to justify this reduction
and this deviation shall be specified in the QM plan, and data available for review by the preparing or acquiring activity. The
minimum stress level allowed in this case is condition A. For flip chip devices, Constant acceleration test is not required.
6/ At the manufacturer's option, external visual inspection for catastrophic failures may be conducted after each of the
thermal/mechanical screens, after the sequence or after seal test. Catastrophic failures are defined as missing leads, broken
packages, or lids off.
7/ See paragraph A.4.6.3 of appendix A and paragraph B.4.1 of appendix B of MIL-PRF-38535. The PIND test may be performed
in any sequence after temperature cycling test and prior to post burn-in (interim) electrical parameters test.
8/ For device without a cavity or for flip chip devices with underfill, PIND test is not applicable.
9/ Class V or class Y (class level S) devices shall be serialized prior to the first recorded electrical measurement in screening. Class
Q (class level B) microcircuits shall be serialized if delta calculations or matching characteristics are a requirement of the device
specification. Each microcircuit shall be assigned a unique serial number in order to trace the data back to an individual device
within the inspection lot which shall, in turn, be traceable to the wafer lot from which the device originated.
10/ Interim (pre and post burn-in) electrical testing shall be performed when specified, to remove defective devices prior to further
testing or to provide a basis for application of percent defective allowable (PDA) criteria when PDA is specified (Ref. test step 14:
PDA calculation, and footnote 17 herein). If no device specification or drawing exists, subgroups tested shall at least meet those
of the most similar device specification or standard microcircuit drawing (SMD). This test need not include all specified device
parameters, but shall include those measurements that are most sensitive to the time and temperature effects of burn-in and the
most effective in removing electrically defective devices.
11/ When specified in the applicable device specification, 100 percent of the devices shall be tested and the results recorded for
those parameters requiring delta calculations.
12/ For class V and class Y (class level S) microcircuit devices, delta measurements shall be performed. The specific delta
parameters shall be as defined in the applicable device specification. Pre burn-in and post burn-in interim electrical parameters
shall be read and recorded when delta measurements have been specified as part of post burn-in electrical measurements, 100
percent of the devices shall be tested and the results shall be recorded for those parameters requiring delta calculations.
20
MIL-PRF-38535K
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits - Continued.
13/ Burn-in shall be performed on all QML microcircuits, except as modified in accordance with SMD section 4.2, or above their
maximum rated operating temperature (for devices to be delivered as wafer or die, burn-in of packaged samples from the wafer
lot shall be performed to a quantity accept level of 10(0)). For microcircuits whose maximum operating temperature is stated in
terms of ambient temperature (TA), table I of TM 1015 of MIL-STD-883 applies. For microcircuits whose maximum operating
temperature is stated in terms of case temperature (TC), and where the ambient temperature would cause TJ to exceed +175°C,
the ambient operating temperature may be reduced during burn-in from +125°C to a value that will demonstrate a TJ between
+175°C and +200°C and TC equal to or greater than +125°C without changing the test duration. Data supporting this reduction
shall be documented in the QM plan and shall be available to the acquiring and qualifying activities upon request. For devices
with solder terminations, burn-in test may be performed before solder balls/columns have been attached to the packages.
14/ When test condition F of method 1015 for temperature accelerated screening is used for either burn-in or reverse bias burn-in , it
shall be used for both. Also, when devices have aluminum/gold metallurgical systems (at either the die pad or package post),
the constant acceleration test shall be performed after burn-in and before completion of the final electrical tests (e.g, to allow
completion of time limited tests but that sufficient 100 percent electrical testing to verify continuity of all bonds is accomplished
subsequent to constant acceleration).
15/ Where applicable, dynamic burn-in test shall be performed, and test condition F of method 1015 and temperature accelerated
test requirement shall not apply. For class V or class Y (class level S), burn-in test shall be performed in accordance with
TM 1015 of MIL-STD-883, on each device for 240 total hours at +125°C. For a specific device type, the burn-in duration may be
reduced from 240 to 160 hours if three consecutive production lots of identical parts, from three different wafer lots pass percent
defective allowable (PDA) requirements after completing 240 hours of burn-in. Sufficient analysis (not necessarily failure
analysis) of all failures occurring during the run of the three consecutive burn-in lots shall not reveal a systematic pattern of
failure indicating an inherent reliability problem which would require that burn-in be performed for a longer time. The
manufacturer's burn-in procedures shall contain corrective action plans, approved by the qualifying activities for dealing with lot
failures.
16/ The reverse bias burn-in is a requirement only when specified in the applicable device specification and is recommended only for
a certain MOS, linear or other microcircuits where surface sensitivity may be a concern. When reverse bias burn-in is not
required, interim post burn-in electrical parameter measurements shall be omitted. The order of performing the burn-in test and
the reverse bias burn-in test may be inverted. Static burn-in may be substituted for high temperature reverse bias burn-in based
on device technology and must be approved by the QA. Moreover, burn-in time-temperature regression table I of TM 1015 of
MIL-STD-883 can be used for determination of reverse bias burn-in time and temperature.
17/ The percent defective allowable (PDA) shall be 5 percent or one device, whichever is greater. This PDA shall be based, as a
minimum, on failures from group A, subgroup 1 plus deltas (in all cases where delta parameters are specified) with the
parameters, deltas and any additional subgroups (or subgroups tested in lieu of A-1) subject to the PDA as specified in the
applicable device specification or drawing. If no device specification or drawing exists, subgroups tested shall at least meet those
of the most similar device specification or Standard Microcircuit Drawing. In addition, for class V or class Y (class level S) the
PDA shall be 3 percent (or one device, whichever is greater) based on failures from functional parameters measured at room
temperature. For class level S screening where an additional reverse bias burn-in is required, the PDA shall be based on the
results of both burn-in tests combined. The verified failures after burn-in divided by the total number of devices submitted in the
lot or sublot for burn-in shall be used to determine the percent defective for that lot, or sublot and the lot or sublot shall be
accepted or rejected based on the PDA for the applicable device class. Lots and sublots may be resubmitted for burn-in one
time only and may be resubmitted only when the percent defective does not exceed twice the specified PDA (10 percent) or
2 devices, whichever is greater. This test need not include all specified device parameters, but shall include those
measurements that are most sensitive to and effective in removing electrically defective devices (see A.4.6.1.1 and A.4.6.1.2 of
MIL-PRF-38535).
21
MIL-PRF-38535K
TABLE IA. Screening procedure for hermetic classes Q, V and non-hermetic class Y microcircuits - Continued.
18/ Final electrical testing of microcircuits shall assure that the microcircuits tested meet the electrical requirements of the device
specification and shall include the tests of table III, group A, subgroups 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, and 11, unless otherwise
specified in the device specification. For solder termination devices, ball grid array (BGA) packages electrical test shall be
performed across the full military temperature range after attachment of the solder balls on the package, and for colmun grid
array (CGA) packages, electrical test shall be performed across the full military temperature range before attachment of the
solder columns on the package. After column attach, electrical test shall be performed at 25°C (Group A, subgroup 1) as a
minimum to verify that no electrical/mechanical damage has been introduced due to the column attach process.
19/ Functional tests shall be conducted at input test conditions as follows: VIH = VIH(min) +20 percent, -0 percent; VIL = VIL(max) +0
percent, -50 percent; as specified in the most similar military detail specification. Devices may be tested using any input voltage
within this input voltage range but shall be guaranteed to VIH(min) and VIL(max).
CAUTION: To avoid test correlation problems, the test system noise (e.g., testers, handlers, etc.) should be verified to assure
that VIH(min) and VIL(max) requirements are not violated at the device terminals.
20/ The fine and gross leak seal tests shall be performed separately or together, between constant acceleration and external visual
inspection test. For class level S and class level B devices, all device lots (sublots) having any physical processing steps (e.g.,
lead shearing, lead forming, solder dipping to the glass seal, change of, or rework to, the lead finish, etc.) performed following
seal or external visual inspection shall be retested for hermeticity and visual defects. This shall be accomplished by performing,
and passing, as a minimum, a sample seal test (method TM 1014) using an acceptance criteria of a quantity (accept number) of
116(0), and an external visual inspection (method TM 2009) on the entire inspection lot (sublot). For devices with leads that are
not glass-sealed and that have a lead pitch less than or equal to 1.27 mm (0.050 inch), the sample seal test shall be performed
using an acceptance criteria of a quantity (accept number) of 15(0). If the sample fails the acceptance criteria specified, all
devices in the inspection lot represented by the sample shall be subjected to the fine and gross seal tests and all devices that fail
shall be removed from the lot for final acceptance. For class level S devices, with the approval of the qualifying activity, an
additional room temperature electrical test may be performed subsequent to seal, but before external visual, if the devices are
installed in individual carriers during electrical test.
21/ The radiographic and/or C-SAM screening test may be performed in any sequence after serialization. Only one view is required
for flat packages and leadless chip carriers having lead (terminal) metal on four sides. For flip chip technology, only C-SAM
inspection is required. C-SAM inspection may be performed in any sequence after underfill cure for flip chip technology.
For additional requirements for this test, see appendix B paragraph B.4.1 of MIL-PRF-38535.
22/ External visual inspection shall be performed on the lot any time after radiographic test and prior to shipment, and all shippable
samples shall have external visual inspection at least subsequent to qualification or quality conformance inspection testing.
23/ The manufacturer shall inspect the devices 100 percent or on a sample basis using a quantity/accept number of 116(0). If one or
more rejects occur in this sample, the manufacturer may double the sample size with no additional failures allowed or inspect the
remaining devices 100 percent for the failed criteria and remove the failed devices from the lot. If the double sample also has
one or more failures, the manufacturer shall be required to 100 percent inspect the remaining devices in the lot for the failed
criteria. Re-inspection magnification shall be no less than that used for the original inspection for the failed criteria.
24/ Samples shall be randomly selected from the assembled inspection lot for testing in accordance with the specific device class
and lot requirements of Group A, B, C, D, E and applicable appendices of MIL-PRF-38535 or TM 5005 of MIL-STD-883;
after the specified screen requirements herein table IA or TM 5004 have been satisfactorily completed.
25/ Radiation dose rate induced latch-up screen test shall be conducted when specified in purchase order or contract. Dose rate
induced latch-up screen test is not required when radiation induced latch-up is verified to be not possible such as SOI, SOS and
dielectrically isolated technology devices. If radiation dose rate induced latch-up screen test is required, it may be performed at
any screening operation step after seal test, at the manufacturer's option. Test conditions, temperature, and the electrical
parameters to be measured pre, post, and during the test shall be in accordance with the device specification. The PDA for each
inspection lot for class V or class Y (class level S) sublot submitted for radiation latch-up test shall be 5 percent or one device,
whichever is greater.
22
MIL-PRF-38535K
TABLE IB. Tests/monitors for plastic packages. 1/
Test/monitor
MIL-STD-883 test method (TM) or industry standard
1. Wafer acceptance
2. Internal visual
TRB / QM plan (see H.3.2.1.4)
TM 2010 or in accordance with manufacturers internal procedures
3. Temperature cycling/thermal shock
4. Resistance to solvents
5. Bond strength
TM 1010/TM 1011
TM 2015
TM 2011
6. Ball shear
ASTM F1269
TM 2003
7. Solderability
8. Die shear or stud pull
TM 2019 or TM 2027
9. Steady-state life test
End-point electricals
TM 1005
In accordance with device specification
10. Physical dimensions
11. Lead integrity
TM 2016
TM 2004
e.g., TM 1034 (dye penetrant test), cross-sectioning, C-mode
scanning acoustical microscopy (CSAM) TM 2030, etc.
12. Inspection for delamination
JESD22-A118,
100 hours, +130°C, 85% relative humidity (RH) 2/
13. Highly accelerated stress testing (HAST)
14. Autoclave
JESD 22-A102 (no bias) 2 atm., +121°C
TM 1009
15. Salt atmosphere
16. Adhesion to lead finish
17. Interim pre burn-in electricals
18. Burn-in test
TM 2025
In accordance with device specification
TM 1015, 160 hours at +125°C or manufacturers QM plan
In accordance with device specification
1% PDA or manufacturer's QM plan
19. Interim post burn-in electricals
20. PDA or alternate procedure for lot acceptance
21. Final electrical tests (see table III, herein, for
definition of subgroups)
a. static test
In accordance with device specification
b. dynamic test
c. functional test
d. switching test
22. External visual inspection test
TM 2009 or JESD22-B101 or manufacturers internal procedures
1/ Test methods (TMs) are listed herein to give the manufacturer an available method to use. Alternate procedures and test
methods may be used. Monitor frequency and sample plan shall be in accordance with manufacturer's QM plan.
2/ An alternate process monitor may be used; e.g., +85°C/85% relative humidity (RH).
23
MIL-PRF-38535K
TABLE II. Group B tests (Mechanical and environmental test)
Group B tests for QML microcircuits
Group B tests for class level B and S microcircuits
(TM 5005 of MIL-STD-883)
Subgroups
1/
(MIL-PRF-38535)
Class Q
Class V
Class Y
Class level B
Class level S
Subgroup 1
Resistance to solvents 2/
TM 2015 3(0)
Resistance to solvents 2/
TM 2015 3(0)
Resistance to solvents 2/
TM 2015 3(0)
a. Physical dimensions
3/
TM 2016
b. Internal water vapor content
TM 1018 3(0) 3/ 4/ 5/
2(0)
(5,000 ppm maximum water
content at 100°C)
Subgroup 2
a. Bond strength
7/
a. Bond strength
7/
a. Bond strength 7/
a. Resistance to
solvents 2/
a. Resistance to solvents 2/
TM 2015 3(0)
6/
TM 2011 22(0)
TM 2011 22(0)
TM 2011
22(0)
(1) Thermo compression -
Test condition C or D
(2) Ultrasonic -
(1) Thermo compression -
Test condition C or D
(2) Ultrasonic -
(1) Thermo compression -
Test condition C or D
(2) Ultrasonic -
TM 2015 3(0)
b. Internal visual and mechanical
TM 2013, TM 2014 2(0)
c. Bond strength 7/
Test condition C or D
(3) Beam lead - Test condition H
Test condition C or D
(3) Beam lead - Test condition H
Test condition C or D
(3) Beam lead - Test condition H
TM 2011
22(0)
(1) Thermo compression -
Test condition C or D
(2) Ultrasonic -
Test condition C or D
(3) Beam lead - Test condition H
b. Die shear test or substrate
attach strength or stud pull test
including passive elements
TM 2019 or TM 2027 3(0)
b. Die shear test or substrate
attach strength or stud pull test
including passive elements
TM 2019 or TM 2027 3(0)
b. Die shear test or substrate
attach strength or stud pull test
including passive elements
TM 2019 or TM 2027 3(0)
d. Die shear test or substrate
attach strength or stud pull test
including passive elements
TM 2019 or TM 2027 3(0)
c. Flip chip pull off test
TM 2031 or TM 2011 2(0)
c. Flip chip pull off test
TM 2031 or TM 2011 2(0)
c. Flip chip pull off test
TM 2031 or TM 2011 2(0)
d. Flip chip die shear strength
test or substrate attach
strength test (test perform post
underfill cure)
d. Flip chip die shear strength
test or substrate attach
strength test (test perform post
underfill cure)
d. Flip chip die shear strength
test or substrate attach
strength test (test perform post
underfill cure)
e. Flip chip pull off test
TM 2031 or TM 2011 2(0)
TM 2019 or TM 2027 3(0)
TM 2019 or TM 2027 3(0)
TM 2019 or TM 2027 3(0)
f. Flip chip die shear strength test
or substrate attach strength test
(test perform post underfill cure)
TM 2019 or TM 2027 3(0)
24
MIL-PRF-38535K
TABLE II. Group B tests (Mechanical and environmental test) . – Continued.
Group B tests for QML microcircuits
(MIL-PRF-38535)
Group B tests for class level B and S microcircuits
(TM 5005 of MIL-STD-883)
Subgroups
1/
Class Q
Class V
Class Y
Class level B
Class level S
Subgroup 3
sample size 22(0)
(22 leads from 3 devices) +245°C ±5°C
8/
Solderability TM 2003 Solderability TM 2003
Solderability TM 2003
solder temperature
+245°C ±5°C
Solderability TM 2003
solder temperature
+245°C ±5°C
Solderability TM 2003
solder temperature
+245°C ±5°C
solder temperature
solder temperature
+245°C ±5°C
Subgroup 4
sample size 45(0)
3/
For BGA/CGA packages:
For BGA/CGA packages:
a. Lead integrity TM 2004 9/
(Test condition B2, lead fatigue)
(i) Ball shear test for BGA
package - JESD22-B117
(45 balls from 2 devices
minimum)
(i) Ball shear test for BGA
package - JESD22-B117
(45 balls from 2 devices
minimum)
b. Seal test TM 1014
as applicable
(1) Fine leak
(2) Gross leak
(ii) Solder column pull test for
CGA package – TM 2038
(45 columns from 2 devices
minimum)
(ii) Solder column pull test for
CGA package - TM 2038
(45 columns from 2 devices
minimum)
c. Lid torque TM 2024 10/
as applicable
d. For BGA/CGA packages:
(i) Ball shear test for BGA
package - JESD22-B117
(45 balls from 2 devices
minimum)
(ii) Solder column pull test for
CGA package – TM 2038
(45 columns from 2 devices
minimum)
25
MIL-PRF-38535K
TABLE II. Group B tests (Mechanical and environmental test) . – Continued.
Group B tests for QML microcircuits
Group B tests for class level B and S microcircuits
(TM 5005 of MIL-STD-883)
Subgroups
1/
(MIL-PRF-38535)
Class Q
Class V
Class Y
Class level B
Class level S
Subgroup 5
a. Bond strength TM 2011 15(0) 11/
(1) Thermo compression -
sample size 45(0)
Test condition C or D
(2) Ultrasonic - condition C or D
(4) Beam lead - condition H
a. End-point electrical parameters 12/
- As specified in the applicable device
specification
b. Die shear test or substrate attach strength or stud
pull test including passive elements
TM 2019 or TM 2027 3(0)
b. Steady state life test 13/
TM 1005 Test condition C, D or E
c. Flip chip pull off test
TM 2031 or TM 2011 2(0)
c. End-point electrical parameters 12/
- As specified in the applicable device
specification
d. Flip chip die shear strength test or substrate attach
strength test (test perform post underfill cure)
TM 2019 or TM 2027
3(0)
Subgroup 6
Sample size 15(0)
14/
a. Temperature cycling TM 1010,
condition C, 100 cycles minimum
b. Constant acceleration TM 2001, condition E,
Y1 orientation only
c. Seal test TM 1014
(1) Fine leak
(2) Gross leak
d. End-point electrical parameters - As specified
in the applicable device specification
Note: The screening and QCI/TCI tables from MIL-PRF-38535 and MIL-STD-883 Test Methods 5004 and 5005 have been combined for consistency. A future revision of
MIL-STD-883 will reflect this change as well. Manufacturers shall document in their QM plan the screening and QCI/TCI requirements to either MIL-PRF-38535 or MIL-STD-883.
26
MIL-PRF-38535K
TABLE II. Group B tests (Mechanical and environmental test) . – Continued.
1/ Electrical reject devices from the same inspection lot may be used for all subgroups when end-point measurements are not required
provided that the rejects are processed identically to the inspection lot through pre burn-in electrical and provided the rejects are
exposed to the full temperature/ time exposure of burn-in. Group B test shall be performed on each inspection lot as a condition for lot
acceptance for delivery. Group B test shall be performed on each qualified package type and lead finish.
2/ Resistance to solvents testing required only on devices using inks or paints as a marking medium. For devices with solder
terminations, Resistance to solvents test shall be performed with balls/columns.
3/ Not required for qualification or quality conformance inspections where group D inspection is being performed on samples from the
same inspection lot. For devices with solder terminations, Physical dimension test shall be performed with balls/columns.
4/ This test is required only, if it is a glass-frit-sealed package. Unless handling precautions for beryllia packages are available and
followed TM 1018, procedure 3 shall be used (see group D, subgroup 6 of table V). For class Y non-hermetic microcircuits devices
Internal water vapor content test is not applicable.
5/ Test three devices; if one fail, test two additional devices with no failures. At the manufacturers option, if the initial test sample (e.g., 3
or 5 devices) fails, a second complete sample may be tested at an alternate laboratory that has been granted current suitability status
by the qualifying activity. If this sample passes, the lot shall be accepted provided the devices and data from both submissions is
submitted to the qualifying activity along with five additional devices from the same lot. If sample size (accept number) of 5(1) is used
to pass the lot, the manufacturer shall evaluate their product to determine the reason for the failure and whether the lot is at risk.
6/ For all devices, except flip chip, the die shear test or substrate attach strength or stud pull test including passive elements shall be
performed per TM 2019 or TM 2027, as applicable. For flip chip devices, flip chip pull off test shall be performed per TM 2031 or
TM 2011. Flip chip die shear test or substrate attach strength test shall be performed after underfill is cured per TM 2019 or TM 2027.
If the flip chip device uses passive elements the substrate attach strength or stud pull test shall also be performed per TM 2019 or
TM 2027. For solder termination devices, subgroup 2 test may be performed without balls and columns attached.
7/ Unless otherwise specified, the sample size number for condition C or D is the number of bond pulls selected from a minimum number
of 4 devices, and for condition H is the number of dice (not bonds) (see TM 2011).
8/ All devices submitted for solderability test shall be in the lead finish that will be on the shipped product and which has been through the
temperature/time exposure of burn-in except for devices which have been hot solder dipped or undergone tin-lead fusing after burn-in.
The sample size number applies to the number of leads inspected except in no case shall less than 3 (three) devices be used to
provide the number of leads required. For BGA/CGA packages, solderability test shall be verified after solder ball or solder column
attachment processes per TM 2003. For CGA packages, solder temperature shall be maintained in accordance with table 1 of
TM 2003.
9/ The sample size number of 45 for lead integrity shall be based on the number of leads or terminals tested and shall be taken from a
minimum of 3 devices. All devices required for the lead integrity test shall pass the seal test and lid torque test, if applicable, (see 10/)
in order to meet the requirements of subgroup 4. For pin grid array leads and rigid leads, use TM 2028. For leaded chip carrier
packages, use condition B1. For leadless chip carrier packages only, use test condition D and a sample size number of 15 based on
the number of pads tested taken from 3 devices minimum. Seal test (subgroup 4b) need to be performed only on packages having
leads exiting through a glass seal. For LGA/BGA/CGA packages, TM 2004 does not apply.
10/ Lid torque test shall apply only to packages which use a glass-frit-seal to lead frame, lead or package body (e.g., wherever frit seal
establishes hermeticity or package integrity). Device packages with lid/heat sink attached on the back side of a flip chip die require a
lid shear or lid torque test. Manufacturers shall submit test procedures for lid shear test for approval of QA. Lid torque test shall be
performed in accordance with TM 2024.
11/ Test samples for bond strength may, at the manufacturer's option, unless otherwise specified, be randomly selected prior to or
following internal visual (PRESEAL) inspection specified in table IA herein or TM 5004, prior to sealing provided all other specifications
requirements are satisfied (e.g., bond strength requirements shall apply to each inspection lot, bond strength samples shall be counted
even if the bond would have failed internal visual exam). Unless otherwise specified, the sample size number for condition C or D is
the number of bond pulls selected from a minimum number of 4 devices, and for condition F or H is the number of dice (not bonds)
(see TM 2011).
12/ Read and record group A subgroups 1, 2 and 3.
13/ The alternate removal-of-bias provisions of 3.3.1 of TM 1005 shall not apply for test temperature above 125°C.
14/ For devices with solder terminations, Temperature cycling and Constant acceleration test may be performed without balls/columns
attachment.
27
MIL-PRF-38535K
TABLE III. Group A (electrical tests) . 1/
MIL-STD-883 test method and conditions
Minimum sample size quantity (accept no.) 2/ 3/ 4/ 5/
Subgroups
Tests
Class Q
(class level B)
Class V 6/
(class level S)
Class Y 6/
(class level S)
1
2
Static tests at +25°C
116(0) or
100 percent/ 0 sample
116(0) or
100 percent/ 0 sample
116(0) or
100 percent/ 0 sample
Static tests at maximum rated
operating temperature
3
Static tests at minimum rated
operating temperature
Dynamic tests at +25°C
4
5
6
116(0) or
100 percent/ 0 sample
116(0) or
100 percent/ 0 sample
116(0) or
100 percent/ 0 sample
Dynamic tests at maximum rated
operating temperature
Dynamic tests at minimum rated
operating temperature
7
Functional tests at +25°C
116(0) or
100 percent/ 0 sample
116(0) or
100 percent/ 0 sample
116(0) or
100 percent/ 0 sample
Functional tests at maximum rated
operating temperature
8A
Functional tests at minimum rated
operating temperature
8B
9
Switching tests at +25°C
116(0) or
100 percent/ 0 sample
116(0) or
100 percent/ 0 sample
116(0) or
100 percent/ 0 sample
Switching tests at maximum rated
operating temperature
10
11
Switching tests at minimum rated
operating temperature
1/ The specific parameters to be included for tests in each subgroup shall be as specified in the applicable acquisition document.
Where no parameters have been identified in a particular subgroup or test within a subgroup, no group A testing is required for
that subgroup or test to satisfy group A requirements.
2/ At the manufacturer's option, the applicable tests required for group A testing (see 1/ herein) may be conducted individually or
combined into sets of tests, subgroups (as defined in table III), or sets of subgroups. However, the manufacturer shall pre-
designate these groupings prior to group A testing. Unless otherwise specified, the individual tests, subgroups, or sets of
tests/subgroups may be performed in any sequence.
3/ The sample plan (quantity and accept number) for each test, subgroup, or set of tests/subgroups as pre-designated in 2/ herein,
shall be 116/0.
4/ A greater sample size may be used at the manufacturer's option; however, the accept number shall remain at zero. When the
(sub)lot size is less than the required sample size, each and every device in the (sub)lot shall be inspected and all failed
devices removed from the (sub)lot for final acceptance of that test, subgroup, or set of tests/subgroups, as applicable. For
those lots having a quantity of less than 116 devices, the test shall be imposed on a 100 percent basis with zero failure.
5/ If any device in the sample fails any parameter in the test, subgroup, or set of tests/subgroups being sampled, each and every
additional device in the (sub)lot represented by the sample shall be tested on the same test set-up for all parameters in that
test, subgroup, or set of tests/subgroups for which the sample was selected, and all failed devices shall be removed from the
(sub)lot for final acceptance of that test, subgroup, or set of tests/subgroups, as applicable. For device class V or class Y (class
level S), if the testing results in a percent defective allowable (PDA) greater than 5 percent, the (sub)lot shall be rejected, except
that for (sub)lots previously unscreened to the tests that caused failure of this percent defective, the (sub)lot may be accepted
by resubmission and passing the failed individual tests, subgroups, or set of tests/subgroups, as applicable, using a 116/0
sample.
6/ For class V and class Y, group A electrical tests additional requirements see paragraph B.4.3 appendix B of MIL-PRF-38535.
28
MIL-PRF-38535K
TABLE IV. Group C life tests .
MIL-STD-883 test method and conditions
Minimum sample size quantity (accept no.)
Tests
Subgroup
Class Q
(class level B)
1/
Class V
(class level S)
1/ 2/
Class Y
(class level S)
1/ 2/
Subgroup 1
a. Steady-state life test a. TM 1005 45(0)
1000 hours at 125°C
a. TM 1005 45(0)
a. TM 1005 45(0)
1000 hours at 125°C
1000 hours at 125°C
b. End-point electrical
parameters
b. As specified in the
applicable device
b. As specified in the
applicable device
b. As specified in the
applicable device
procurement specification
procurement specification
procurement specification
1/ Life test may be performed on a quantity (accept) criteria of 22(0) for 2000 hours at 125°C or equivalent per TM 1005 to attain
44,000 device hours. For lots greater than 200, actual devices shall be used. For lots less than or equal to 200, the number
of actual devices shall be the greater of 5 devices or 10 percent of the lot, and the SEC shall supplement actual devices to
result in a sample of 22 unless acceptable group C data from the same lot of SEC is available for the previous 3 months. The
SEC shall have been produced under equivalent conditions as the production lot and as close in time as feasible, but not to
exceed a 3-months period.
2/ Group C life tests shall be performed on the initial production lot of actual devices from each wafer lot, in accordance with
table IV herein. Group C life tests are not required to be performed on subsequent production lots when all the following
conditions are met:
(a) Subsequent production lots utilize die from the same wafer lot as the initial production lot.
(b) Wafers or die remaining from the initial production lot are to be stored in dry nitrogen or equivalent controlled storage,
and in covered containers.
(c) No major changes to the assembly processes have occurred since the group C test was performed on the wafer lot.
Note: For ASICs, a sample size of 5 actual devices may be used with the balance being made up of the SEC.
29
MIL-PRF-38535K
TABLE V. Group D tests (Package related test) .
MIL-STD-883 test method and conditions
Class V
Subgroups test
Tests 1/
Class Q
Class Y
(class level B)
(class level S)
(class level S)
Subgroup 1
sample size 15(0)
2/
Physical dimensions
TM 2016
TM 2016
TM 2016
Where applicable
a. TM 2004
Where applicable
a. TM 2004
Where applicable
a. TM 2004
Subgroup 2
sample size 45(0)
2/ 3/
a. Lead/terminal integrity
test
condition B2 (lead fatigue) condition B2 (lead fatigue) condition B2 (lead fatigue)
or applicable for the
or applicable for the
or applicable for the
package technology style
package technology style
package technology style
b. Seal test 4/
(1) Fine leak
b. TM 1014
Test condition as
applicable
b. TM 1014
Test condition as
applicable
b. 5/
(2) Gross leak
c. For BGA/CGA packages
c. BGA/CGA packages
c. BGA/CGA packages
c. BGA/CGA packages
(i) Ball shear test for BGA
package
(i) For BGA package -
JESD22-B117
(i) For BGA package -
JESD22-B117
(i) For BGA package -
JESD22-B117
(45 balls from 2 devices
minimum)
(45 balls from 2 devices
minimum)
(45 balls from 2 devices
minimum)
(ii) Solder column pull test
for CGA package
(ii) For CGA package -
TM 2038
(ii) For CGA package -
TM 2038
(ii) For CGA package -
TM 2038
(45 columns from
2 devices minimum)
(45 columns from
2 devices minimum)
(45 columns from 2 devices
minimum)
Subgroup 3
sample size 15(0)
6/ 7/
a. Thermal shock
a. TM 1011
a. TM 1011
a. TM 1011
Test condition B,
15 cycles minimum
Test condition B,
15 cycles minimum
Test condition B,
15 cycles minimum
b. Temperature cycling
b. TM 1010
b. TM 1010
b. TM 1010
Test condition C,
100 cycles minimum
Test condition C,
100 cycles minimum
Test condition C,
100 cycles minimum
c. Moisture resistance
d. Visual examination
c. TM 1004 8/
c. TM 1004 8/
c. HAST in accordance with
JESD22-A118,
condition B
d. In accordance with
visual criteria of
d. In accordance with
visual criteria of
d. In accordance with visual
criteria of TM 1004 or
TM 1010
TM 1004 or TM 1010
TM 1004 or TM 1010
e. Seal test 9/
(1) Fine leak
e. TM 1014 test condition e. TM 1014 test condition e. 5/
as applicable
as applicable
(2) Gross leak
f. End-point electrical
parameters 10/
f. As specified in the
applicable device
f. As specified in the
applicable device
f. As specified in the
applicable device
.
30
MIL-PRF-38535K
TABLE V. Group D tests (Package related test) . - Continued.
MIL-STD-883 test method and conditions
Test
1/
Subgroups
Class Q
(class level B)
Class V
(class level S)
Class Y
(class level S)
Subgroup 4
sample size 15(0)
6/ 7/
a. Mechanical shock
a. TM 2002
condition B minimum
a. TM 2002
condition B minimum
a.TM 2002
condition B minimum
b. Vibration, variable
frequency
b. TM 2007
condition A minimum
b. TM 2007
condition A minimum
b.TM 2007
condition A minimum
c. Constant acceleration
11/
c. TM 2001
Test condition E,
Y1 orientation only
c. TM 2001
Test condition E,
Y1 orientation only
c.TM 2001
Test condition E,
Y1 orientation only
d. Seal test
d. TM 1014 condition as
applicable
d. TM 1014 condition as
applicable
d. 5/
(1) Fine leak
(2) Gross leak
e. Visual examination
e. In accordance with
e. In accordance with
e. In accordance with
visual criteria of TM 2007
visual criteria of TM 2007
visual criteria of TM 2007
f. End-point electrical
parameters
f. As specified in the
applicable device
specification
f. As specified in the
applicable device
specification
f. As specified in the
applicable device
specification
Subgroup 5
sample size 15(0)
2/
a. Salt atmosphere
a. TM 1009
a. TM 1009
a. TM 1009
Test condition A minimum Test condition A minimum Test condition A minimum
b. Visual examination
b. In accordance with
b. In accordance with
b. In accordance with
visual criteria of TM 1009
visual criteria of TM 1009
visual criteria of TM 1009
c. Seal 9/
(1) Fine leak
(2) Gross leak
c. TM 1014 condition as
applicable
c. TM 1014 condition as
applicable
c. 5/
Subgroup 6
Internal water vapor test
(cavity packages)
TM 1018 3(0)
5,000 ppm maximum
water content at 100°C
TM 1018 3(0)
5,000 ppm maximum
water content at 100°C
5/
2/ 12/
Subgroup 7
sample size 15(0)
2/ 13/ 14/
Adhesion of lead finish
Where applicable
TM 2025
Where applicable
TM 2025
Where applicable
TM 2025
31
MIL-PRF-38535K
TABLE V. Group D tests (Package related test) . - Continued.
MIL-STD-883 test method and conditions
Test
1/
Subgroups
Class Q
Class V
Class Y
(class level B)
(class level S)
(class level S)
Subgroup 8
sample size 5(0)
2/
Lid torque 15/
Where applicable
TM 2024
Where applicable
TM 2024
Where applicable
TM 2024
Where applicable
a. TM 2036
Where applicable
a. TM 2036
Where applicable
a. TM 2036
Subgroup 9
sample size 3(0)
(3 leads minimum)
16/
a. Soldering heat
b. Seal
b. TM 1014 condition as
applicable
b. TM 1014 condition as
applicable
b. 5/
(1) Fine leak
(2) Gross leak
c. External Visual
examination
c. TM 2009
c. TM 2009
c. TM 2009
d. End-point electrical
d. As specified in the
applicable device
specification
d. As specified in the
applicable device
specification
d. As specified in the
applicable device
specification
Note: The screening and QCI/TCI tables from MIL-PRF-38535 and MIL-STD-883 Test Methods 5004 and 5005 have been
combined for consistency. A future revision of MIL-STD-883 will reflect this change as well. Manufacturers shall document in
their QM plan the screening and QCI/TCI requirements to either MIL-PRF-38535 or MIL-STD-883.
1/ In-line monitor data may be substituted for subgroups D1, D2, D6, D7, and D8 upon approval by the qualifying activity. The
monitors shall be performed by package type and to the specified subgroup test method(s). The monitor sample shall be taken at
a point where no further parameter change occurs, using a sample size and frequency of equal or greater severity than specified
in the particular subgroup. The in-line monitor data shall be traceable to the specific inspection lot(s) represented (accepted or
rejected) by the data.
2/ Electrical reject devices from that same inspection lot may be used for samples. For devices with solder terminations,
subgroups 1, 2, 5 and 8 tests shall be performed with balls and columns.
3/ The sample size number of 45, C = 0 for lead integrity shall be based on the number of leads or terminals tested and shall be
taken from a minimum of 3 devices. All devices required for the lead integrity test shall pass the seal test if applicable (see 4/) in
order to meet the requirements of subgroup 2. For leaded chip carrier packages, use condition B1. For pin grid array leads and
rigid leads, use TM 2028. For leadless chip carrier packages only, use test condition D and a sample size number of 15 (C = 0)
based on the number of pads tested taken from 3 devices minimum. For LGA/BGA/CGA packages, TM 2004 does not apply.
4/ Seal test (subgroup 2b) need be performed only on packages having leads exiting through a glass seal.
5/ This test is not applicable for class Y non-hermetic microcircuits devices.
6/ Devices used in subgroup 3, "Thermal and Moisture Resistance" may be used in subgroup 4, "Mechanical".
32
MIL-PRF-38535K
TABLE V. Group D tests (Package related test) . - Continued.
7/ For devices with solder terminations, subgroups 3 and 4 tests may be performed without balls and columns.
8/ Lead bend stress initial conditioning is not required for leadless chip carrier packages or BGA/CGA packages. For fine pitch
packages ( ≤ 25 mil pitch) using a nonconductive tie bar, preconditioning shall be required on 3 devices only prior to the moisture
resistance test with no subsequent electrical test required on these 3 devices. The remaining 12 devices from the sample of 15
devices do not require preconditioning but shall be subjected to the required endpoint electrical tests.
9/ After completion of the required visual examinations and prior to submittal to TM 1014 seal tests, the devices may have the
corrosion by-products removed by using a bristle brush.
10/ At the manufacturer's option, end-point electrical parameters may be performed after moisture resistance and prior to seal test.
11/ For flip chip packages Constant acceleration test is not required.
12/ Test three devices; if one fails, test two additional devices with no failures. At the manufacturer's option, if the initial test sample
(e.g., 3 or 5 devices) fails a second complete sample may be tested at an alternate laboratory that has been issued suitability by
the qualifying activity. If this sample passes the lot shall be accepted provided the devices and data from both submissions is
submitted to the qualifying activity along with 5 additional devices from the same lot. If sample size (accept number) of 5(1) is
used to pass the lot, the manufacturer shall evaluate his product to determine the reason for the failure and whether the lot is at
risk.
13/ The adhesion of lead finish test shall not apply for leadless chip carrier, land grid array (LGA), ball grid array (BGA), and column
grid array (CGA) packages.
14/ Sample size number 15 leads from 3 devices minimum are based on number of leads with zero failure.
15/ Lid torque test shall apply only to packages which use a glass-frit-seal to lead frame, lead or package body (e.g., wherever frit
seal establishes hermeticity or package integrity). Device packages with lid/heat sink attached on the back side of a flip chip die
require a lid shear or lid torque test. Manufacturers shall submit test procedures for lid shear test for approval of QA. Lid torque
test shall be performed in accordance with TM 2024.
16/ This test is performed at qualification/re-qualification of design changes which may affect this test. The manufacturer shall
determine, for each package, the applicable conditions from TM 2036 that are appropriate for the mounting conditions, and
assure by testing, or through their assembly processes, that the part is subjected to an equivalent time/temperature stress.
33
MIL-PRF-38535K
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see
6.2). When packaging of material is to be performed by DoD or in-house contractor personnel, these personnel need to
contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by
the Inventory Control Point’s packaging activities within the Military Service of Defense Agency, or within the military service’s
system commands. Packaging data retrieval is available from the managing Military Department’s or Defense Agency’s
automated packaging files, CD-ROM products, or by contacting the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. Microcircuits conforming to this specification are intended for use for Government microcircuit application
and logistic purposes. For maximum cost effectiveness while maintaining essential quality and reliability requirements, it is
recommended that, for initial acquisitions for original equipment complements, the device class appropriate to the need of the
application be acquired.
6.1.1 Class T. As the requirements for class level T are specified in the manufacturer’s Quality Management (QM) plan for
each technology, the user is cautioned to review the manufacturer's QM plan to assure that the part being acquired meets the
requirements/reliability of the system application. Class T is not for use in NASA manned, satellite, or launch vehicle programs
without written permission from the applicable NASA Project Office (e.g., cognizant EEE parts authority).
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of the specification.
b. PIN and compliance identification (if applicable).
c. Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the
time of award of contract, qualified for inclusion in Qualified Manufacturer’s List, QML-38535, whether or not such
manufacturers have actually been listed by that date. The attention of the contractors is called to these requirements, and
manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for
qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification.
Information pertaining to qualification of products may be obtained from DLA Land and Maritime, ATTN: DLA Land and
Maritime-VQ, P.O. Box 3990, Columbus, Ohio 43218-3990.
6.4 Terms and definitions. For the purpose of this specification, the terms, and definitions of MIL-STD-883 and
MIL-HDBK-1331, and those contained herein apply and should be used in the applicable device specifications wherever they
are pertinent.
6.4.1 Microelectronics. The area of electronic technology associated with or applied to the realization of electronic systems
from extremely small electronic parts or elements.
6.4.2 Element (of a microcircuit or integrated circuit). A constituent of the microcircuit, or integrated circuit, that contributes
directly to its operation. (e.g., A discrete part incorporated into a microcircuit becomes an element of the microcircuit.)
34
MIL-PRF-38535K
6.4.3 Substrate (of a microcircuit or integrated circuit). The supporting material upon, or within which, the elements of a
microcircuit or integrated circuit are fabricated or attached.
6.4.4 Integrated circuit (microcircuit). A small circuit having a high equivalent circuit element density, which is considered
as a single part composed of interconnected elements on or within a single substrate to perform an electronic circuit function.
6.4.4.1 Multichip microcircuit. An integrated circuit or microcircuit consisting of elements formed on or within two or more
semiconductor chips which are separately attached to a substrate or package.
6.4.4.2 Monolithic microcircuit. An integrated circuit or microcircuit consisting exclusively of elements formed in situ on or
within a single semiconductor substrate with at least one of the elements formed within the substrate.
6.4.4.3 Microcircuit module. An integrated circuit, which is an assembly of microcircuits or an assembly of microcircuits and
discrete parts, designed to perform one or more electronic circuit functions, and constructed such that for the purposes of
specification testing, commerce, and maintenance, it is considered indivisible.
6.4.5 Production lot. A production lot of devices manufactured on the same production line(s) (QM technology flow) by
means of the same production technique, materials, controls, and design.
6.4.6 Inspection lot. A quantity of integrated circuits submitted at one time for inspection to determine compliance with the
requirements and acceptance criteria of the applicable device specification. Each inspection lot is to be manufactured on the
same production line through final seal by the same production techniques.
6.4.7 Wafer lot. A wafer lot consists of integrated circuit wafers formed into a lot at the start of wafer fabrication for
homogeneous processing as a group, and assigned a unique identifier or code to provide traceability.
6.4.8 Percent defective allowable (PDA). PDA is the maximum observed percent defective which permits the lot to be
accepted after the specified 100 percent test.
6.4.9 Delta limit. The maximum change in a specified parameter reading that will permit a device to be accepted on the
specified test, based on a comparison of the present measurement with a specified previous measurement.
NOTE: When expressed as a percentage value, it should be calculated as a proportion of the previous measured value.
6.4.10 Rework. Any processing or reprocessing operation documented in accordance with the manufacturer's QM plan,
other than testing, applied to an individual device, or part thereof, and performed subsequent to the prescribed non-repairing
manufacturing operations which are applicable to all devices of that type at that stage.
6.4.11 Final seal. The manufacturing operation that completes the enclosure of a device so that further internal processing
cannot be performed without disassembling the device.
35
MIL-PRF-38535K
6.4.12 Acquiring activity. The organizational element which contracts for articles, supplies, or services; or it may be a
contractor or subcontractor when the organizational element has given specific written authorization to such contractor or
subcontractor to serve as agent of the acquiring activity. A contractor or subcontractor serving as agent of the acquiring
activity does not have the authority to grant waivers, deviations, or exceptions to this specification unless specific written
authorization to do so has been given by the organization (e.g., preparing activity, qualifying activity).
6.4.13 Qualifying activity (QA). The organizational element of the Government that grants certification and qualification for
the specific technology flow in accordance with this specification.
6.4.14 Parts per million (PPM). Parts per million is as defined in EIA-557.
6.4.15 Device type. The term device type refers to a single specific microcircuit configuration.
6.4.16 Die type. A microcircuit manufactured using the same physical size, materials, topology, mask set, process flow, on
a single fabrication line.
6.4.17 Radiation hardness assurance (RHA). The portion of product assurance that assures that parts continue to perform
as specified or degrade in a specified manner when subjected to the specified radiation environmental stress. The radiation
hardness assurance capability level (RHACL) is the radiation level that the manufacturer chooses for each radiation
environment appropriate to his technology as a consistently achievable exposure level that does not cause degradation in the
microcircuit beyond the specified level of performance.
6.4.18 Electrostatic discharge (ESD) sensitivity . ESD sensitivity is defined as the level of susceptibility of a device to
damage by static electricity. The level of susceptibility of a device is found by ESD classification testing and is used as the
basis for assigning an ESD class.
6.4.19 Package family. A group of package types with identical configuration and process techniques (e.g., cerdip, side
braze, cerpack).
6.4.20 Technology flow. A technology flow is that specific manufacturing line from design, fabrication, assembly,
packaging, and test in a given technology from which a manufacturer designs, builds, and tests integrated circuits. Once a
manufacturer's technology flow has been certified and qualified by the QA, it is listed on the QML.
6.4.21 Qualified Manufacturer's Listing (QML). The QML is a listing of the manufacturers and their parts which utilize a
certified and qualified technology flow.
6.4.22 Third party design center. A subcontract design center, or an original equipment manufacturer (OEM) design center,
that uses a microcircuit manufacturer's design tools (including approved industry/third party tools), interface procedures,
design rules, and design controls.
6.4.23 Radiation source of supply (RSS). A company (e.g., original equipment manufacturer (OEM)) who establishes a
relationship with a device manufacturer for the sole purpose of developing qualified RHA product and has the responsibility to
incur the radiation response of said product to the requirements of MIL-PRF-38535, the applicable detail specification, and the
RSS program plan. The RSS will be listed in the QML for those devices covered by the RSS's QML. All requests for this
product will be submitted through the RSS.
6.4.24 Form. The shape, size, dimension, mass, weight, and other visual parameters which uniquely characterize an item.
For software, form denotes the language and media.
6.4.25 Fit. The ability of an item to physically interface, or interconnect with, or become an integral part of another item.
6.4.26 Function. The action or actions that an item is designed to perform.
36
MIL-PRF-38535K
6.4.27 Class M. Items which have been subjected to and passed all applicable requirements of appendix A herein and are
documented on an SMD. This product is intended for military applications.
6.4.28 Class N. Items which have been subjected to and passed all applicable requirements of this specification including
qualification testing, screening testing, and TCI/QCI inspections, and are encapsulated in plastic. This product must be
assessed by the user to determine if it is appropriate for use in users’ application.
6.4.29 Class Q. Items which have been subjected to and passed all applicable requirements of this specification and
applicable appendices including qualification testing, screening testing, and TCI/QCI inspections.
6.4.30 Class V. Items that meet all the class Q requirements, and have been subjected to, and passed all applicable
requirements of appendix B herein.
6.4.31 Class Y. A microcircuit employing a ceramic non-hermetic package, which meets all applicable requirements of this
specification including qualification, screening and TCI/QCI requirements, and all applicable requirements of Appendix B
herein.
6.4.32 Class B. Items which have been subjected to and passed all applicable requirements of this specification including
qualification testing, screening testing, and TCI/QCI inspections and are documented on a MIL-M-38510 specification sheet.
6.4.33 Class S. Items that meet all the class B requirements, and have been subjected to, and passed, all applicable
requirements of appendix B herein and are documented on a MIL-M-38510 specification sheet.
6.4.34 Class T. Class T is a quality level whose requirements are defined by 3.4.8 herein and as documented on an SMD.
Class T is not for use in NASA manned, satellite, or launch vehicle programs without written permission from the applicable
NASA Project Office (e.g., cognizant EEE parts authority).
6.4.35 Qualified manufacturer’s line. The specified line, which is the certified and qualified technology flow, of a
manufacturer from which QML integrated circuits may be purchased.
6.4.36 Test optimization. The process used by the manufacturer to optimize testing utilizing the best commercial practices
available while still assuring all applicable performance, quality, and reliability requirements are met. Any screen or TCI test
prescribed herein may be reduced, modified, moved, or eliminated by the QML manufacturer provided the product is still
capable of meeting the screening and TCI testing groups A, B, C, D, and E for the applicable detail specification as approved
by the QA.
6.4.37 Audit team. The audit team will be led by DLA Land and Maritime personnel and comprised of government
representatives (e.g., NASA, NRO, ARMY, NAVY, USAF and DTRA) as designated by the qualifying activity.
6.4.38 Class level B. Class level B requirements contained in this document define the requirements for class Q and class
B, including SMDs and M38510 JAN slash sheet product. Class level B is the standard military quality level, it is intended for
high reliability military applications.
6.4.39 Class level S. Class level S requirements contained in this document define the requirements for class V, class Y
(class level S) (Space level product), including SMDs and M38510 JAN slash sheet product. Class level S is the highest
reliability level provided for in this specification, it is intended for space applications.
37
MIL-PRF-38535K
6.4.40 Class level vs Class. This specification defines the requirements for two class levels of product, class level S and
class level B. Each class level is made up of multiple classes of product, class level S contains the requirements for classes V
and Y product, and class level B contains the requirements for class Q product.
6.4.41 Second party facility. A second party facility is a QA approved facility that acts as a subcontractor to a QML device
manufacturer (e.g. QML Company X using QML Company Y for wafer fabrication, or as a test lab performing TCI testing).
6.4.42 Third party facility. A third party facility is a manufacturer whose facility does not have QML certification. The
process or line used by the QML manufacturer has been certified through the manufacturer for those products supplied as
QML by the manufacturer (e.g., QML Company X using non-QML Company Z to Fab die, only the line or process of the non-
QML company is evaluated for use by the QML manufacturer not the entire facility).
6.4.43 New technology. New technology is defined as a product family, material, or process that has never been previously
characterized and qualified by the manufacturer for a military or space level application.
6.4.44 Mature technology. A mature technology is defined as one which the manufacturer has previously released to
production and has a continuous reliability monitor plan in place to identify major reliability life-limiting mechanisms, detect
long-term product shifts, and generate process data or established proof of stable process and/or equipment with negligible
wear out.
6.4.45 Lot date code. Lot date code will be assigned to identify the devices with the assembly processing and assembly
location. Devices will be traceable through the lot date code to the assembly year, sealing week and assembly location.
6.4.46 Storage temperature. The optimal storage temperature range is defined as -65°C to +150°C.
6.4.47 Multi-product wafer (MPW) . A wafer composed of more than one integrated circuit (microcircuit) design fabricated
on the same wafer. The Multi-product wafer (MPW) may contain a Standard Evaluation Circuit (SEC) design along with
product designs or contain just product designs. MPW wafers will be fabricated as a wafer lot as defined in section 6.4.7.
6.4.48 Package integrity demonstration test plan (PIDTP) . The package integrity demonstration test plan defines to
address the manufacturability, test, quality and reliability issues associated with unique to specific non-traditional
assembly/package techniques.
38
MIL-PRF-38535K
6.5 Discussion. The foundation of generic qualification is the requirement for a Quality Management (QM) program within
the manufacturing environment. QM requires that all levels of management and non-management be actively involved in the
commitment to quality. Also, a TRB is to be established to control, stabilize, monitor and improve the qualified technology.
The TRB will develop a QM plan that outlines how the manufacturing operation for a given technology is controlled, monitored
and improved throughout its entire "life cycle". Key aspects of this plan are the establishment of statistical process control
(SPC), field failure return programs, corrective action procedures, quality improvement, and any other approaches required to
control and improve product quality and reliability. These requirements are detailed in this specification. Further, this
specification describes procedures and requirements for manufacturer's listing on the QML for integrated circuits.
Manufacturers listed on the QML will be able to produce microcircuits without the need for extensive end-of-manufacturing
qualification testing and QCIs on each device design. The reduction of the end-of-manufacturing testing will be replaced with
in-line monitoring and testing and SPC. Also, surrogate devices, such as the SEC will be used to assess the technology's
reliability. Introduction of this methodology shifts the emphasis from the need of individual microcircuit qualification to process
(technology) certification and qualification. This will accelerate the microcircuit insertion cycle of high quality and reliable
microcircuits.
The generic qualification philosophy, leading to QML, is a process by which a manufacturer acquires a manufacturing line or
technology flow certification and qualification. Ongoing monitoring techniques will be used to maintain QML status. The
manufacturing line consists of facilities and procedures appropriate to accomplish the design, mask making, wafer fabrication,
assembly, package and testing of microcircuits (see figure 1). Figure 2 illustrates six possible combinations of a
manufacturing line utilizing three design centers, two mask fabrication facilities, three wafer fabrication facilities, two package
and assembly sites and two test facilities. The procedure of generic qualification is accomplished in two stages; certification
and qualification. The process of certification is the recognition of evidence by the QA that the manufacturing line is capable of
producing microcircuits of high quality and compliant with the requirements of this specification. Qualification is the actual
demonstration of the certified manufacturing line capabilities by producing "first pass" microcircuits compliant with the
requirements of this specification and the device specification. On figure 2, each block can be individually reviewed, but is to
be certified as a flow. The only process flow which would be qualified (QML listed) would be the group of blocks which are
linked together and tested during qualification. The letters "A" and "B" indicate a QML flow where qualification testing has
qualified a complete path. The other paths are not QML until certification and qualifications testing of those processes are
done.
39
MIL-PRF-38535K
FIGURE 1. The QML manufacturing line.
FIGURE 2. Combinations of a manufacturing line.
QM does not stop with a manufacturer listed on the QML. This specification identifies the necessary screens which QML
devices are to be capable of meeting. These screens can be reduced or changed by the manufacturers' TRB when gathered
reliability data on the technology indicates that such changes are substantiated. The philosophy of generic qualification
incorporates the idea that high quality and reliable microcircuits can be obtained without excessive testing if the processes are
properly monitored and controlled at each step of the manufacturing line. The following describes the monitors and controls
that may be used.
a. The design procedure and tools are controlled in such a manner that the ensuing microcircuit design performs only
with limits that have been shown to be reliable for the technology being used, within the constraints of established
design rules (electrical, geometric and reliability).
b. The mask fabrication facility is controlled such that an error free mask is produced from the microcircuit design
database. Monitoring, controlling and reducing defect density is helpful in obtaining error free masks.
c. The wafer fabrication process is controlled with the following: Use of in-line statistical control; a parametric monitor
structure for measuring electrical parameters; a TCV structure to study intrinsic reliability mechanisms; and a SEC to
monitor the fabrication process and to serve as a surrogate microcircuit for reliability testing.
d. The package and assembly facility is controlled with emphasis on in-line statistical process control of all assembly
steps.
e. The test area controls consist of test equipment accuracy and calibration as well as a controlled interface to the
microcircuit design center.
40
MIL-PRF-38535K
f. The overall control of the process are under the auspices of a TRB which is established by the manufacturer. The
TRB is solely responsible for the QML flow that has been certified and qualified.
g. For RHA devices, procedures and requirements are integrated into this specification for establishing and
demonstrating a RHACL for the technology. Many device-oriented tests can be reduced or eliminated when
correlation data for models and test structures have been established by the TRB. The main concern in the RHA
community is whether the device specification accurately describes the device performance in the radiation
environment specified. Until such models and test structures are developed, some actual device radiation testing will
be required.
h. Appendix B to this specification defines an implementation transition approach which may be used for space or other
critical environment applications.
6.6 Additional reference documents. The following documents are not directly referenced herein but should be used as
guidelines.
MIL-HDBK-339
MIL-HDBK-814
-
-
Custom Large Scale Integrated Circuit Development and Acquisition for Space Vehicles.
Ionizing Dose and Neutron Hardness Assurance Guidelines for Microcircuits and
Semiconductor Devices.
MIL-HDBK-815
MIL-HDBK-816
MIL-HDBK-817
-
-
-
Dose-Rate Hardness Assurance Guidelines.
Guidelines for Developing Radiation Hardness Assurance Device Specifications.
System Development Radiation Hardness Assurance.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
ASTM INTERNATIONAL (ASTM)
ASTM B487
ASTM B567
-
-
Standard Test Method for Measurement of Metal and Oxide Coating Thickness by
Microscopical Examination of a Cross Section.
Standard Test Method for Measurement of Coating Thickness by the Beta Backscatter Method.
(Copies of these documents are available online at http://www.astm.org/ or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA 19428-2959.)
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JESD541
JEP95
JESD16
-
-
-
Packaging Material Standards for ESD Sensitive Items.
JEDEC Registered and Standard Outlines for Solid State and Related Products.
Assessment of Average Outgoing Quality Levels in Parts Per Million (PPM).
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)
41
MIL-PRF-38535K
6.7 Subject term (key word) listing.
Application specific integrated circuit (ASIC)
Computer-aided design (CAD)
Design-for-test (DFT)
Design rule check (DRC)
Electrical rule check (ERC)
Enhanced low dose rate sensitivity (ELDRS)
Electrostatic discharge (ESD)
Failure analysis (FA)
Joint Test Action Group (JTAG)
Linear energy transfer threshold (LETTH
Mean time to failure (MTTF)
Parametric monitor (PM)
)
Post irradiated end-point parameter limits (PIPL)
Quality management (QM)
Radiation hardness assurance (RHA)
Radiation hardness assurance capability level (RHACL)
Single event effects (SEE)
Standard evaluation circuit (SEC)
Statistical process control (SPC)
Technology characterization vehicle (TCV)
Technology conformance inspection (TCI)
Technology Review Board (TRB)
Time dependent dielectric breakdown (TDDB)
Very high speed integrated circuit (VHSIC)
VHSIC hardware description language (VHDL)
Package integrity demonstration test plan (PIDTP)
Multi-product wafer (MPW)
42
MIL-PRF-38535K
6.8 List of acronyms.
AQL
ANSI
ASIC
ASTM
BV
- acceptable quality level
- American National Standards Institute
- application specific integrated circuit
- American Society for Testing and Materials
- breakdown voltage
CAD
CAGE
CMOS
CSAM
CSI
- computer aided design
- Commercial and Government Entity
- complementary metal oxide semiconductor
- C-mode scanning acoustical microscopy
- contractor source inspection
- design-for-test
DFT
DMS
DRC
DSCC
DTL
- diminishing manufacturing sources
- design rules check
- Defense Supply Center, Columbus
- diode transistor logic
ECL
- emitter coupled logic
EEE
EIA
- electrical, electronic, and electromechanical
- Electronic Industries Alliance
- enhanced low dose rate sensitivity
- epitaxial
ELDRS
EPI
ERC
ESD
FA
- electrical rules check
- electrostatic discharge
- failure analysis
FET
- field effect transistor
FIFO
FSC
GaAs
GCR
GIDEP
gm
- first in, first out
- federal stock class
- gallium arsenide
- galactic cosmic rays
- Government - Industry Data Exchange Program
- linear transconductance
GSI
- Government Source Inspection
- Highly accelerated temperature and humidity stress test
- high-speed CMOS
HAST
HCMOS
HDBK
IC
- handbook
- integrated circuit
ILB
- inner lead bond
43
MIL-PRF-38535K
JAN
- Joint Army Navy
JEDEC
JEP
- (Formerly known as Joint Electronic Device Engineering Council)
- JEDEC publication
JESD
JTAG
LET
- JEDEC standard
- Joint Test Action Group
- linear energy transfer
LETTH
MIL
- linear energy transfer threshold
- military
MOS
MTTF
NASA
NDBP
OEM
PDA
PIN
- metal oxide semiconductor
- mean time to failure
- National Aeronautics and Space Administration
- nondestructive bond pull
- original equipment manufacturer
- percent defective allowable
- part or identifying number
- Package integrity demonstration test plan
- particle impact noise detection
- post - irradiation parameter limits
- programmable logic array
- parametric monitor
PIDTP
PIND
PIPL
PLA
PM
PPM
PROM
QA
- parts per million
- programmable read only memory
- qualifying activity
QAR
QCI
- quality assurance representative
- quality conformance inspection
- quality management
QM
QML
QPL
- qualified manufacturer listing
- qualified products list
RAM
RH
- random access memory
- relative humidity
RHA
RHACL
RMS
ROM
RSS
SAE
SEC
SEE
SEM
SEP
SEU
SMD
- radiation hardness assurance
- radiation hardness assurance capability level
- root mean square
- read only memory
- radiation source of supply
- Society of Automotive Engineers
- standard evaluation circuit
- single event effects
- scanning electron microscope
- single event phenomenon
- single event upset
- Standard Microcircuit Drawing
44
MIL-PRF-38535K
SOI
- silicon on insulator
SOS
SPC
SSS
STD
TAB
TCI
- silicon on sapphire
- statistical process control
- sample size series
- standard
- tape automated bonded
- technology conformance inspection
- technology characterization vehicle
- time dependent dielectric breakdown
- thermo luminescence dosimetry
- test method (e.g., MIL-STD-883)
- technology review board
- transistor transistor logic
- Underwriters Laboratory
- VHSIC hardware description language
- very high speed integrated circuit
- threshold voltage
TCV
TDDB
TLD
TM
TRB
TTL
UL
VHDL
VHSIC
VT
6.9 Environmentally preferable material. Environmentally preferable materials should be used to the maximum extent
possible to meet the requirements of this specification. As of the dating of this document, the U.S. Environmental Protection
Agency (EPA) is focusing efforts on reducing 31 priority chemicals. The list of chemicals and additional information is available
on their website http://www.epa.gov/osw/hazard/wastemin/priority.htm. Included in the EPA list of 31 priority chemicals are
cadmium, lead, and mercury. Use of the materials on the list should be minimized or eliminated unless needed to meet the
requirements specified herein (see Section 3).
6.10 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the
previous issue due to the extent of the changes.
45
MIL-PRF-38535K
APPENDIX A
MICROCIRCUIT SPECIFICATION REQUIREMENTS
A.1 SCOPE
A.1.1 Scope. This appendix establishes the minimum requirements for MIL-STD-883 compliant class level B and
S, monolithic and multichip microcircuits and the quality and reliability assurance requirements that are to be met in
the acquisition of these microcircuits. This appendix will also be required as a performance baseline for qualified
manufacturer listing (QML) class level B and S microcircuits. Detail requirements, specific characteristics of
microcircuits, and other provisions which are sensitive to the particular use intended are to be specified in the
applicable device specification. Two levels, class B and S, of product assurance requirements and control for
monolithic and multichip microcircuits are provided for in this appendix. It is the intent of the Government that a
compliant manufacturer can use this appendix as the first step to becoming a qualified manufacturer under the QML
program. This appendix is a mandatory part of the specification. The information contained herein is intended for
compliance. However, for QML microcircuits the manufacturers may offer approved alternatives that demonstrate a
process control system that achieves at least the same level of quality and reliability as could be achieved by this
appendix.
A.2 APPLICABLE DOCUMENTS
A.2.1 General. The documents listed in this section are specified in sections A.3, A.4, or A.5 of this appendix.
This section does not include documents cited in other sections of this appendix or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections A.3, A.4, and A.5
of this appendix, whether or not they are listed.
A.2.2 Government documents.
A.2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-I-46058
MIL-M-38510
- Insulating Compound, Electrical (For Coating Printed Circuit Assemblies).
- Microcircuits, General Specification For.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1285
MIL-STD-1835
- Test Method Standard Microcircuits.
- Marking of Electrical and Electronic Parts.
- Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103
MIL-HDBK-505
MIL-HDBK-780
MIL-HDBK-1331
- List of Standard Microcircuit Drawings.
- Definitions of Item Levels, Item Exchangeability, Models, and Related Terms.
- Standard Microcircuit Drawings.
- Parameters to be Controlled for the Specification of Microcircuits, Handbook For.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
46
MIL-PRF-38535K
APPENDIX A
A.2.2.2 Other Government documents, drawings, and publications. The following other Government documents,
drawings, and publications form a part of this document to the extent specified herein. Unless otherwise specified,
the issues of these documents are those cited in the solicitation or contract.
DSCC-VQC-42
- Baseline Sheet for Microcircuits Materials and Construction.
(Copies of DSCC-VQC-42 are available from DLA Land and Maritime (ATTN: DLA Land and Maritime-VQC),
P.O. Box 3990, Columbus, OH 43218-3990.)
QML-38535
- Qualified Manufacturers List of Products Qualified Under Performance Specification
MIL-PRF-38535 Integrated Circuits (Microcircuits) Manufacturing, General
Specification For.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.3 Non-Government publications. The following documents form a part of this document to the extent specified
herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F15
ASTM F30
ASTM B170
ASTM B487
- Standard Specification for Iron-Nickel-Cobalt Sealing Alloy.
- Standard Specification for Iron-Nickel Sealing Alloy.
- Standard Specification for Oxygen-Free Electrolytic Copper-Refinery Shapes.
- Standard Test Method for Measurement of Metal and Oxide Coating Thickness by
Microscopical Examination of a Cross Section.
ASTM B567
ASTM B568
- Standard Test Method for Measurement of Coating Thickness by the Beta Backscatter
Method.
- Standard Test Method for Measurement of Coating Thickness by X-Ray Spectrometry.
(Copies of these documents are available online at http://www.astm.org/ or from ASTM International, 100 Barr
Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.)
AMERICAN NATIONAL STANDARDS INSTITUTE (ANSI)
ANSI/NCSL Z540.3 - Calibration Laboratories and Measuring and Test Equipment - General
Requirements.
(Copies of these documents are available online at http://www.ansi.org/ or from American National Standards
Institute, Incorporated, 25 West 43rd Street, 4th Fl. New York, NY 10036.)
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JESD471
JESD541
JESD22-A114
JESD31
JESD625
JEP114.01
- Symbol & Label for Electrostatic Sensitive Devices.
- Packaging Material Standards for ESD Sensitive Items.
- Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM).
- General Requirements for Distributors of Commercial and Military Semiconductors.
- Requirements for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices.
- Guidelines for Particle Impact Noise Detection (PIND) Testing, Operator Training and
Certification.
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)
47
MIL-PRF-38535K
APPENDIX A
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION (ISO) STANDARDS
ISO 14644-1
ISO 14644-2
- Clean rooms and Associated Controlled Environments – Part 1: Classification of Air
Cleanliness.
- Clean rooms and Associated Controlled Environments – Part 2: Specifications for
Testing and Monitoring to Prove Continued Compliance with ISO 14644-1.
(Copies of these documents are available online at http://www.iest.org/ or from Institute of Environmental Sciences
and Technology (IEST), 940 East Northwest Highway, Mount Prospect, IL 60056-3444.)
SOCIETY OF AUTOMOTIVE ENGINEERS (SAE)
SAE-AMS-I-23011
- Iron-Nickel Alloys for Sealing to Glasses and Ceramics.
(Copies of this document are available online at http://www.sae.org/ or from Society of Automotive Engineers, 400
Commonwealth Dr., Warrendale, PA 15096-0001.)
(Non-Government standards and other publications are normally available from the organizations that prepare or
distribute the documents. These documents also may be available in or through libraries or other informational
services.)
A.2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein (except for related specification sheets), the text of this
document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless
a specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 General. The manufacturer of microcircuits in compliance with this appendix shall have and use production
and test facilities and a quality and reliability assurance program adequate to assure successful compliance with the
provisions of this appendix, the manufacturer's baseline (DSCC-VQC-42 or equivalent) and the device specification
or drawing. The individual item requirements shall be as specified herein, and in accordance with the device
specification or drawing.
The requirements of this appendix, or 1.2.1 of MIL-STD-883 are met or exceeded by product built to a QML certified
flow by a QA certified and qualified manufacturer or by a manufacturer who has been granted transitional certification
to MIL-PRF-38535. The QML flow as documented in the QM plan allows modification to processes and tests used in
producing QML devices (See J.3.12 herein). These changes shall not affect the form, fit, function or radiation
hardness assurance level (when applicable) of any QML devices. These devices are marked with the "Q" or "QML"
certification mark to reflect the QML flow used.
A.3.1.1 Reference to device specification or drawing. For purposes of this appendix, when the term "as specified"
is used without additional reference to a specific location or document, the intended reference shall be to the device
specification or drawing which constitutes the applicable individual device specification.
48
MIL-PRF-38535K
APPENDIX A
A.3.1.2 Conflicting requirements. In the event of conflict between the requirements of this appendix, this
specification and other requirements of the applicable device specification, the precedence in which requirements
shall govern, in descending order, is as follows:
a. Applicable device specification or drawing.
b. This appendix.
c. Specifications, standards, and other documents referenced in A.2.2 and A.2.3.
A.3.1.3 Terms, definitions, symbols and requirements. For the purpose of this appendix, the terms, definitions,
and symbols of MIL-STD-883 and MIL-HDBK-1331, and those contained herein shall apply and shall be used in the
applicable device specifications or drawings wherever they are pertinent. The definitions of part, subassembly,
assembly, unit, group, set, and system, as well as the ancillary terms accessory and attachment are contained in
MIL-HDBK-505. To further define a particular type of microcircuit, additional modifiers may be prefixed.
A.3.1.3.1 Microelectronics. The area of electronic technology associated with or applied to the realization of
electronic systems from extremely small electronic parts or elements.
A.3.1.3.2 Element (of a microcircuit or integrated circuit). A constituent of the microcircuit, or integrated circuit, that
contributes directly to its operation. (e.g., A discrete part incorporated into a microcircuit becomes an element of the
microcircuit.)
A.3.1.3.3 Substrate (of a microcircuit or integrated circuit). The supporting material upon or within which the
elements of a microcircuit or integrated circuit are fabricated or attached.
A.3.1.3.4 Integrated circuit (microcircuit) . A small circuit having a high equivalent circuit element density, which is
considered as a single part composed of interconnected elements on or within a single substrate to perform an
electronic circuit function. (e.g., This excludes printed wiring boards, circuit card assemblies, and modules composed
exclusively of discrete electronic parts.)
A.3.1.3.4.1 Multichip microcircuit. An integrated circuit or microcircuit consisting of elements formed on or within
two or more semiconductor chips which are separately attached to a substrate or package.
A.3.1.3.4.2 Hybrid microcircuit. A microcircuit consisting of elements that are a combination of the film microcircuit
type (see A.3.1.3.4.4) and the semiconductor types (see A.3.1.3.4.1 and A.3.1.3.4.3) or a combination of one or both
of the types with discrete parts.
A.3.1.3.4.3 Monolithic microcircuit (or integrated circuit). A microcircuit consisting exclusively of elements formed
in situ on or within a single semiconductor substrate with at least one of the elements formed within the substrate.
A.3.1.3.4.4 Film microcircuit (or film integrated circuit). A microcircuit consisting exclusively of elements which are
films formed in situ upon an insulating substrate.
A.3.1.3.5 Microcircuit module. An assembly of microcircuits or an assembly of microcircuits and discrete parts,
designed to perform one or more electronic circuit functions, and constructed such that for the purposes of
specification testing, commerce, and maintenance, it is considered indivisible.
49
MIL-PRF-38535K
APPENDIX A
A.3.1.3.6 Production lot. A production lot shall consist of devices manufactured on the same production line(s) by
means of the same production technique, materials, controls, and design. Where a production lot identification is
terminated upon completion of wafer or substrate processing, or at any later point prior to device sealing, it shall be
permissible to process more than a single device type in a single production lot provided traceability is maintained by
assembling devices into inspection lots, as defined herein, at the point where production lot identification is
terminated.
A.3.1.3.7 Inspection lot - class level S. An inspection lot for class level S microcircuits shall consist of a single
device type from a single wafer lot in a single package type and lead finish unless otherwise specified in the QM plan.
With qualifying activity approval, a maximum of 4 wafer lots may be used to form a class level S inspection lot. All
devices shall be sealed within a single week. All assembly operations from die mounting through package sealing
shall be completed within the same 6-week period. Each inspection sublot shall be uniquely identified to maintain
traceability of that sublot from the wafer lot to the inspection lot (see A.3.4.6 and A.4.3.3).
A.3.1.3.8 Inspection lot - class level B. A quantity of microcircuits submitted at one time for inspection to determine
compliance with the requirements and acceptance criteria of the applicable device specification. Each inspection lot
shall consist of microcircuits of a single device type, in a single package type and lead finish. Each inspection lot
shall be manufactured on the same production lines through final seal by the same production techniques and sealed
within the same period not exceeding 6 weeks. Inspection lot identification shall be maintained from the time the
inspection lot is formed through the time the lot is accepted, and shall be traceable to the production lot(s) from which
the inspection lot was formed (see A.3.4.6 and A.4.3.3).
A.3.1.3.9 Inspection sublot - class level S. An inspection sublot for class level S microcircuits shall be a division
(one wafer lot maximum) of parts in an inspection lot into smaller quantities of parts (see A.4.5.2 herein).
A.3.1.3.10 Inspection lot split - class level B. A class level B inspection lot split shall be a further division of the
number of parts in an inspection lot into smaller quantities of parts (see A.4.5.2 herein).
A.3.1.3.11 Wafer lot. A wafer lot consists of microcircuit wafers formed into a lot at the start of wafer fabrication for
homogeneous processing as a group, and assigned a unique identifier or code to provide traceability, and maintain
lot integrity throughout the fabrication process (see A.4.3.3 herein).
A.3.1.3.12 Package type. A package with a unique case outline (see MIL-STD-1835), configuration, materials
(including bonding wire and die attach), piece parts (excluding pre-forms which differ only in size), and assembly
processes.
A.3.1.3.13 Microcircuit group. Microcircuits which are designed to perform the same type of basic circuit function
(e.g., for linear: Amplifier, comparator, sense amplifier, regulator, etc.; for digital: Logic gate buffer, flip-flop,
combinational gate, sequential register/counter) within a given circuit technology (e.g., diode transistor logic (DTL),
non-Schottky transistor transistor logic (TTL), emitter coupled logic (ECL), Schottky TTL, linear, hybrid, metal oxide
semiconductor(MOS)) which are designed for the same supply, bias and signal voltages and for input-output
compatibility and which are fabricated by use of the same basic die construction and metallization; the same die
attach method; and by use of bonding interconnects of the same size, material and attachment method.
A.3.1.3.14 Percent defective allowable (PDA). Percent defective allowable is the maximum observed percent
defective which will permit the lot to be accepted after the specified 100 percent test.
Delta limit (∆)
. The maximum change in a specified parameter reading which will permit a device to be
A.3.1.3.15
accepted on the specified test, based on a comparison of the present measurement with a specified previous
measurement. NOTE: When expressed as a percentage value, it shall be calculated as a proportion of the previous
measured value.
50
MIL-PRF-38535K
APPENDIX A
A.3.1.3.16 Rework. Any processing or reprocessing operation documented in accordance with A.4.8.1.1.6h
herein, other than testing, applied to an individual device, or part thereof, and performed subsequent to the
prescribed non repairing manufacturing operations which are applicable to all devices of that type at that stage.
A.3.1.3.17 Final seal. That manufacturing operation which completes the enclosure of a device so that further
internal processing cannot be performed without disassembling the device.
A.3.1.3.18 Acquiring activity. The organizational element of the Government which contracts for articles, supplies,
or services; or it may be a contractor or subcontractor when the organizational element of the Government has given
specific written authorization to such contractor or subcontractor to serve as agent of the acquiring activity. A
contractor or subcontractor serving as agent of the acquiring activity shall not have the authority to grant waivers,
deviations, or exceptions to this appendix unless specific written authorization to do so has also been given by the
Government organization (e.g., preparing activity).
A.3.1.3.19 Qualifying activity. The organizational element of the Government that grants certification and
qualification for the specific associated end-product in accordance with this appendix and the applicable device
specification or drawing. For non-JAN product built in accordance with this appendix, the qualifying activity shall be
either the acquiring activity or quality organization within the manufacturer's company that is independent of the
group(s) responsible for device production screening and marketing or by an independent organization outside the
manufacturer's company.
A.3.1.3.20 Device type. The term device type refers to a single specific microcircuit configuration. Samples of the
same device type will be electrically and functionally interchangeable with each other at the die or substrate level
even though made by different manufacturers using different mechanical layouts and possibly different materials.
The electrical and environmental limits will be the same (but not necessarily the inherent reliability) for a given device
type even though the device class, the case outline, the lead finish, the lot identification code, and the manufacturer
may be different.
A.3.1.3.21 Die type. A microcircuit manufactured using the same physical size, materials, topology, mask set, and
process flow, on a single fabrication line.
A.3.1.3.22 Antistatic. An antistatic material resists triboelectric charging upon contact and separation with another
material. Plastic materials impregnated with antistatic agents (antistats) are antistatic if their surface resistivity is
between 109 and 1014 ohms/square.
A.3.1.3.23 Conductive. A conductive material is one capable of electrostatic field shielding and having a volume
resistivity of 103 ohm-cm maximum or a surface resistivity less than 105 ohms/square.
A.3.1.3.24 Insulating. An insulating material is defined as having a volume resistivity of 1012 ohm-cm minimum, or
a surface resistivity of 1014 ohms/square minimum.
A.3.1.3.25 Dissipative. A dissipative material is defined as having a surface resistivity between 105 and 109
ohms/square.
A.3.1.3.26 Radiation hardness assurance (RHA). The portion of product assurance which insures that parts
continue to perform as specified or degrade in a specified manner when subjected to the specified radiation
environmental stress.
A.3.1.3.27 Electrostatic discharge (ESD) sensitivity. Electrostatic discharge sensitivity is defined as the level of
susceptibility of a device to damage by static electricity. The level of susceptibility of a device is found by ESD
classification testing and is used as the basis for assigning an ESD class (see A.3.4.1.4).
51
MIL-PRF-38535K
APPENDIX A
A.3.1.3.28 Custom microcircuit. A nonstandard microcircuit, the design, and right(s) to the design (for example,
ownership, control, or proprietary rights) of which are under the control of the purchaser-user of the microcircuit.
A.3.1.3.29 Die family. All devices manufactured by the same basic process (e.g., low power Schottky, high speed
CMOS (HCMOS), Bipolar linear, CMOS linear, MOS memory, etc.) as specified in tables A-VI, A-VII, A-VIII, and A-IX.
A.3.1.3.30 Package family. A set of package types with the same package configuration (e.g., side brazed, bottom
brazed) material type (e.g., alumina, beryllium oxide (BeO)) package construction techniques (e.g., single layer,
multilayer) terminal pitch, except for can packages in which pin circle diameter can be used in place of terminal pitch,
lead shape (e.g., gullwing, J-hook), and row-spacing (e.g., dual-in-line packages only) and with identical package
assembly techniques (e.g., material and type of seal, wire bond method and wire size, die attach method and
material).
A.3.1.3.31 Military operating temperature range. The military temperature range or military operating temperature
range is defined as -55°C to +125°C.
A.3.1.3.32 Process monitor. The regularly scheduled periodic sample measuring of a parameter during normal
performance of production operations in accordance with the manufacturer’s approved program plan. The parameter
to be measured, the frequency of measurement, the number of sample measurements, the conditions of
measurement, the analysis of measurement data shall vary as a function of the requirements, capability and criticality
of the operation being measured.
A.3.1.3.33 Device specification. The terms device specification or Standard Microcircuit Drawing (SMD) shall be
used exclusively to reference or describe Government published documents with the combined purposes of
standardization and procurement which detail the specific requirements of performance based microcircuits.
A.3.1.3.34 Class level B. Class level B requirements contained in this document are intended for use for class Q
and class M products, as well as class B M38510 JAN slash sheet product. Class level B requirements are also
intended for use for product claimed as 883 compliant or 1.2.1 compliant for high reliability military applications.
A.3.1.3.35 Class level S. Class level S requirements contained in this document are intended for use for class V
or class Y and slash sheet M38510 JAN product. Class level S requirements are also intended for use for product
claimed as 883 compliant or 1.2.1 compliant for space level applications.
A.3.2 Item requirements. The individual item requirements for microcircuits delivered under this appendix shall be
documented in the device specification or SMD or other drawing (SMD format, in accordance with MIL-HDBK-780,
shall be used for drawings). Unless otherwise specified in the device specification or drawing, all devices procured
under this appendix shall have an operating ambient temperature range from -55°C to +125°C and any references to
minimum or maximum operating temperatures shall refer to the respective lower and upper limits of this range.
Contractor-prepared specifications or drawings shall be approved by the acquiring activity as acceptable for the
requirements of a specific contract or order, at the time of acquisition.
A.3.2.1 Electrical test requirements. The electrical test requirements (parameters, test conditions, test limits, and
applicable test temperatures) which apply to electrical screening (e.g., final electrical parameters), group A Quality
Conformance Inspection (QCI), and end-point electrical testing for other QCI subgroups shall be clearly documented
by the manufacturer as to the actual parameters, conditions, methods, limits, burn-in/life test circuits, and test
temperatures used in device testing. All those parameters important to the design application of the device shall be
specified over the full military operating temperature range and supply voltage range and be included in the testing
requirements of the applicable specification(s). For devices whose initial release date is after 29 May 1987, the
subgroups to be tested, and the parameters that constitute a subgroup shall, as a minimum, be equivalent to those of
the most similar device specification or drawing. The manufacturer's electrical test specification shall be documented
in a device specification table I format, or equivalent, that is clear to the user and shall be available to the user upon
request.
52
MIL-PRF-38535K
APPENDIX A
A.3.2.2 Alternate die/fabrication requirements. When deemed necessary by the preparing or acquiring activity,
(e.g., a class M SMD device, a DLA Land and Maritime drawing device, a MIL-STD-883 compliant device, or a
Qualified Products List/Qualified Manufacturers List (QPL/QML) device or a unique package/die combination is not
available from a DLA Land and Maritime drawing, SMD, QML, or QPL source that meets the full wafer fabrication
requirements of this appendix), the DLA Land and Maritime drawing, SMD, JAN specification sheet or other
procurement document (e.g., contractor-prepared drawing for “D” certification only) may be modified to provide a
source for logistics support. This modification shall allow either a detailed certificate of compliance (itemized listing of
die fabrication requirements from this appendix - see example in A.3.2.2.1 herein) or a die evaluation as defined by
A.3.2.2.2 herein to be used in lieu of meeting the full die/fabrication requirements of this appendix. Alternate die
fabrication requirements of A.3.2.2.1 and A.3.2.2.2 are permitted only for product that does not have the required
traceability of A.3.4.6. These alternate requirements are acceptable only when the manufacturer planning to use this
allowance has information on the wafer lot number, date of fabrication of the die, the fabrication line where the die
was processed, and that the die was previously qualified by a QML/QPL manufacturer (for QML product) or by a MIL-
STD-883 compliant manufacturer (for MIL-STD-883 compliant product). The manufacturer that meets the
die/fabrication requirements of A.3.2.2.1 or A.3.2.2.2 is required to perform QCI testing of groups C and D (and E if
applicable) on the first inspection lot of each wafer lot and shall replace the “C” certification mark with a “D”
certification mark. An additional complete group D test is not required if the manufacturer already has group D
coverage on the package family; however, subgroups D3 and D4 shall be required on the first inspection lot of the
wafer lot. For excess die from the evaluated wafer lot, an additional group C and group D (subgroups D3 and D4
only) tests are not required for subsequent inspection lots built solely from die from that wafer lot. If the product is
built in full compliance to the requirements of this appendix (the alternate die/fabrication allowance of A.3.2.2 is not
being used), the “C” certification mark shall be used on the device.
A.3.2.2.1 Example C of C. This C of C from the wafer manufacturer certifies that the product identified by
fabrication code XXXXXX meets the fabrication requirements of appendix A of MIL-PRF-38535 (1.2.1 of MIL-STD-
883) including the following itemized requirements:
a. Change to product requirement of A.3.4.2.
b. Internal conductor (current density) requirements of A.3.5.5.
c. Traceability requirements of A.3.4.6.
d. Glassivation thickness requirements of A.3.5.8.
e. Die thickness requirement of A.3.5.9.
f. Quality assurance program requirements of A.4.8.
g. Control and traceability of design documentation requirements of A.3.5.4.
h. Workmanship and rework provisions of A.3.7.
i. Design and construction baseline requirements of A.4.8.1.3.8.
53
MIL-PRF-38535K
APPENDIX A
A.3.2.2.2 Die evaluation requirements. The following requirements shall be met for each wafer lot. The results of
this evaluation shall demonstrate compliance to this appendix for wafer manufacturing requirements.
a. Functional diagram and high power photomicrographs.
b. Analysis of internal conductor materials.
c. Composition of glassivation material and thickness measurement.
d. Total die thickness measurement.
e. SEM analysis of metallization.
f. Adhesion of gold backing.
g. Calculated current density in accordance with this appendix.
A.3.3 Classification of requirements. The requirements of the microcircuits are classified herein as follows:
Requirement
Paragraph
Quality assurance requirements
Qualification
A.3.4
A.3.4.1
A.3.4.1.1
A.3.4.1.2
A.3.4.1.3
A.3.4.1.4
A.3.4.2
A.3.4.3
A.3.4.4
A.3.4.5
A.3.4.6
A.3.5
Compliance validation
Process Monitor Programs
Qualification to RHA levels
Qualification to ESD classes
Change to product or QA program
Screening
Quality conformance inspection
Wafer lot acceptance
Traceability
Design and construction
Marking of microcircuits
Workmanship
A.3.6
A.3.7
54
MIL-PRF-38535K
APPENDIX A
A.3.3.1 Certification of conformance and acquisition traceability. Manufacturers or suppliers including dealers and
distributors who offer the product described by this appendix shall provide written certification, signed by the
corporate officer who has management responsibility for the production and assurance of the quality and reliability of
the product, (1) that the product being supplied has been manufactured and tested in accordance with this appendix
and conforms to all of its requirements, and can be reasonably expected to remain in conformance indefinitely unless
destructively mishandled, (2) that all products are as described on the certificate which accompanies the shipment,
and (3) that dealers and distributors have handled the product in accordance with the requirements of JESD625 and
JESD31. The responsible corporate official may, by documented authorization, designate other responsible
individuals to sign the certificate, but, the responsibility for conformity with the facts shall rest with the responsible
corporate officer. The certification shall be confirmed by documentation to the Government or to users with
Government contractors or subcontractors, regardless of whether the products are acquired directly from the
manufacturer or from another source such as a distributor. When other sources are involved, their acquisition
certification shall be in addition to the certificates of conformance and acquisition traceability provided by the
manufacturer and previous distributors. The certificate shall include the following information:
a. Manufacturer documentation:
(1) Manufacturer's name and address.
(2) Customer's or distributor's name and address.
(3) Device type and product assurance level.
(4) Lot date code and latest re-inspection date, if applicable.
(5) Quantity of devices in shipment from manufacturer.
(6) Statement certifying product conformance and traceability.
(7) Solderability re-inspection date, if applicable.
(8) Signature and date of transaction.
(9) If applicable, the certificate shall include a statement indicating that alternate die/fab requirements are
being used, see A.3.2.2 (”D” cert mark).
b. Distributor documentation for each distributor:
(1) Distributor's name and address.
(2) Name and address of customer.
(3) Quantity of devices in shipment.
(4) Latest re-inspection date, if applicable.
(5) Certification that this shipment is a part of the shipment covered by the manufacturer's documentation.
(6) Solderability re-inspection date, if applicable.
(7) Signature and date of transaction.
55
MIL-PRF-38535K
APPENDIX A
A.3.4 Quality assurance requirements. The quality assurance provisions provided in this appendix are intended to
provide a compliant MIL-STD-883 class level B or level S device (see A.3.1.3.34 and A.3.1.3.35). Devices or lots
which have failed to pass any tests applied or acceptance criterion (PDA) shall not be downgraded to any lower
quality assurance level even though that test or criterion may not be a requirement of the lower level (a failed device
or lot shall not be accepted). Where shown, method references are in accordance with MIL-STD-883.
A.3.4.1 Qualification. The manufacturer supplying devices in compliance to this appendix shall perform sufficient
product qualification testing to assure the devices supplied meet the minimum class level B or S performance
requirements as described herein. The manufacturer shall maintain documentation of qualification testing for review
of the preparing or acquiring activity upon request.
A.3.4.1.1 Compliance validation. Although on-site audits are not a condition to begin supplying under the
requirements of this appendix, all manufacturers supplying in compliance to this appendix are subject to periodic
Government compliance validation audits on a drop-in basis with a minimum of notice.
A.3.4.1.2 Process monitor programs. Process monitor programs performed by the manufacturer shall be
established as a minimum for the following processes: Scanning Electron Microscope (SEM), wire bonding, die
attachment, lid seal, particle detection, lead trimming, and final lead finish thickness. The implementing procedures
shall provide for frequency, sample size, reject criteria, allowable rework, and disposition of failed product/lot(s). With
the exception of the particle detection monitor, a procedure is required for the traceability, recovery, and disposition of
all units monitored since the last successful test. As with all monitors, the particle detection procedure shall provide
for continual process improvement. Records of these monitors and procedures shall be maintained and available for
review.
A.3.4.1.2.1 Inspection by scanning electron microscope (SEM). A continuing SEM program shall be established to
ensure adequate process control and coverage of metallization at oxide steps, contact openings, and general
metallization. A monthly (minimum frequency) SEM evaluation shall be performed on product that is in the
manufacturing process. The SEM program shall establish routine control over metallization processes by process
families or inspection of products.
A.3.4.1.2.2 Wire bonding. The manufacturer shall monitor the wire bond strength in accordance with the
manufacturer's documented procedure. The frequency of this procedure shall be performed at machine setup and at
the end of the production run as a minimum. At the manufacturer's option, this procedure shall consider shift start
and stop, change of operators, spools, packages, wire size, lot size, and other related factors.
A.3.4.1.2.3 Die attachment. The manufacturer shall monitor the die attachment integrity in accordance with the
manufacturer's documented procedure. This procedure shall be performed at each equipment setup and at the end
of the production run as a minimum. At the manufacture's option, this procedure shall consider other related factors.
A.3.4.1.2.4 Lid seal. The manufacturer shall monitor, as a minimum, glass frit packages for seal integrity in
accordance with the manufacturer's documented procedure. A sample and test plan shall be available for review by
the qualifying or preparing activity.
A.3.4.1.2.5 Particle detection. The manufacturer shall establish a particle detection monitoring program which
assesses the particle contamination of sealed devices on an individual manufacturing line basis. The monitor shall
have provisions for testing in accordance with TM 2020, condition A of MIL-STD-883. JEP114, "Guidelines for
Particle Impact Noise Detection (PIND) Testing, Operator Training and Certification" may be used as a guideline.
Suitable data for each manufacturing line shall be used to establish an appropriate need, sample size, and sampling
frequency for each package family. Unless otherwise approved by the qualifying activity (QA), the minimum sampling
frequency of those devices in production shall be once each month per package family. Investigative and corrective
actions shall be established which address noted deficiencies. Records of this monitor shall be made available for
review and shall represent at least the six-month period preceding the audit.
56
MIL-PRF-38535K
APPENDIX A
A.3.4.1.2.6 Lead trimming and final lead finish thickness. The manufacturer shall monitor the package lead
lengths to assure meeting the applicable device specification or drawing for proper lead length and the final lead
finish thickness in accordance with this appendix. The frequency of the lead length monitor shall be performed at
each equipment setup as a minimum. A sample and test plan shall be available for review by the qualifying or
preparing activity.
A.3.4.1.3 Qualification to RHA levels. Qualification to a RHA level shall consist of characterization to the highest
offered RHA level of total ionizing dose (TID). The conditions for radiation testing shall consist of exposing the
devices in a step-stress manner to the highest dose level offered and as a minimum the two next consecutive lower
RHA levels. The levels are identified as follows: 3K Rad(Si), 10K Rad(Si), 30K Rad(Si), 50K Rad(Si), 100 K Rad(Si),
300K Rad(Si), 500K Rad(Si), 1M Rad(Si). The radiation testing plan (QM Plan) and qualification to the appropriate
quality and reliability assurance level for device classes B, Q, S, V, Y or T shall be submitted for QA approval. The
designator RHA levels are defined below:
RHA levels:
RHA level designator
(see A.3.6.2.2)
Total ionizing dose (TID) level
Rad (Si)
/ or -
M
D
No RHA
3x103
10x103
30x103
50x103
100x103
300x103
500x103
P
L
R
F
G
H
106
57
MIL-PRF-38535K
APPENDIX A
A.3.4.1.4 Qualification to ESD classes. Initial qualification to an ESD class, or requalification after redesign, shall
consist of qualification to the appropriate quality and reliability level (class level S or B) plus ESD classification in
accordance with test method 3015 of MIL-STD-883. The test procedure defined within JESD22-A114 (see A.4.4.2.8)
may optionally be used provided the manufacturer is able to demonstrate correlation with test method 3015 of
MIL-STD-883, but the classification levels defined below shall be reported.
ESD classification levels are defined as follows:
Prior
destination
category
Optional
individual
part marking
Optional
package
marking
ESD class
designator
Electrostatic
voltage
0
---
---
---
---
∆0
∆A
∆B
∆C
∆0
∆A
∆B
∆C
< 250 V
1A
1B
1C
250 V – 499 V
500 V – 999 V
1,000 V – 1,999 V
1 (see note)
2
3 (see note)
3A
3B
A
B
---
---
---
∆ (see note)
∆∆
∆∆∆ (see note)
∆∆∆A
∆∆∆B
∆ (see note)
∆∆
∆∆∆ (see note)
∆∆∆A
∆∆∆B
0 V – 1,999 V
2,000 V – 3,999 V
≥ 4,000 V
4,000 V – 7,999 V
≥ 8,000 V
NOTE: ESD class designator 1 has been replaced with designators 0, 1A, 1B, and 1C as of 15 March 2006.
The manufacturer shall test and may mark the tested level obtained under “Optional individual part marking” and
the optional individual part marking may be used as the pin one identifier. Also, ESD class designator 3 has
been replaced by 3A and 3B ESD class designators. ESD class designation 3 may continue to be used for
devices tested before 15 March 2006. After 15 March 2006, for newly developed products, the 3A and 3B
designators shall be used. Prior designation category devices previously classed by test as category A may be
marked as class 1 (∆) and devices previously classified as category B may be marked as class 2 (∆∆).
a. Devices existing prior to 30 September 1989 that were not ESD classification tested shall be marked as class 1
until classified. Devices previously classified by test as category A shall be marked class 1. Devices
previously classified by test as category B shall be marked as class 2. If it can be shown that test results
obtained using TM 3015.3 of MIL-STD-883 correlate with results using TM 3015.6 of MIL-STD-883 (or later
versions) or JESD22-A114 (see A.4.4.2.8) and give correct ESD classification, retesting of previously tested
devices is not required except where redesign has occurred.
b. Beginning no later than 31 December 1988 but prior to 15 March 2006, all newly designed or redesigned
device types shall have been classified as ESD class 1, 2, or 3 in accordance with TM 3015 of MIL-STD-883 or
JESD22-A114 (see A.4.4.2.8). After 15 March, 2006 the device types shall be classified as above.
c. After 30 September 1989, in order to be compliant with this appendix or 1.2.1 of MIL-STD-883, all other device
types for use in new system or equipment designs or system or equipment redesigns shall have completed
classification in accordance with test method 3015 of MIL-STD-883 or JESD22-A114 (see A.4.4.2.8). All
devices of existing design (e.g., not subject to A.3.4.1.4b above) shall be marked class 1 except when known
by test to be, in fact, class 2 or better, in which case they shall be correctly identified for ESD.
d. Although little variation due to case outline is expected, if a device type is available in more than one package
type or case outline, ESD testing and classification shall be applied to at least that one package type shown by
experience to be worst case for ESD.
e. ESD testing classification results (or class one marking assigned without test) shall be submitted to DLA Land
and Maritime-VA for all SMD devices built in compliance to this appendix. ESD testing classification results for
non-SMD devices built in compliance to this appendix shall be retained by the manufacturer and made
available to the acquiring or preparing activity upon request.
58
MIL-PRF-38535K
APPENDIX A
A.3.4.2 Changes and notification of change to product or quality assurance program. The manufacturer shall be
responsible for the implementation of any major changes(s) or class 1 changes of the product or quality assurance
program which may affect performance, quality, reliability, radiation hardness assurance (when specified), ESD class
or interchangeability (see table A-I). The information needed to support these changes shall include acceptable
engineering data, quality conformance inspection data, or a test plan sufficient to demonstrate that the changes(s)
shall not adversely affect performance, quality, reliability, interchangeability, radiation hardness, or electrostatic
discharge sensitivity and that the product will continue to meet the specification requirements. Notification to the
acquiring activity of change of product involving devices acquired to any detail specification/drawing/data sheet is
required for class 1 changes. Class 1 changes are those changes that may affect the performance, quality, reliability,
or interchangeability of the product. Major changes as defined in table A-I shall, as a minimum, be reviewed to
determine whether notification to the users is required. The manufacturer shall make this notification to the acquiring
activity at the time of acceptance of a new order or delivery of an existing order. The manufacturer may make
notification of this change of product through the GIDEP using the Product Change Notice; in any case the
manufacturer shall assure that all known acquiring activities for this product are notified.
A.3.4.2.1 Discontinuation of products. The manufacturer shall have a system that provides notification of product
discontinuation which comprises date of discontinuation and last time buy opportunity in advance (at least 6 months
in advance) to the DLA Land and Maritime for purchasing devices.
A.3.4.3 Screening. All microcircuits to be delivered or submitted for quality conformance in accordance with this
appendix shall have been subjected to, and passed, all the screening tests detailed in TM 5004 of MIL-STD-883 for
the type of microcircuit and quality assurance level (device class) specified.
A.3.4.4 Quality conformance inspection (QCI). Microcircuits shall not be accepted or approved for delivery until
the inspection lot has passed QCI (see A.4.5).
A.3.4.5 Wafer lot acceptance. Class level S microcircuits furnished under this appendix shall be products from
wafer lots that are subjected to and successfully meet the wafer lot acceptance inspections and tests specified in test
method 5007 of MIL-STD-883 or equivalent procedures approved by the acquiring activity.
A.3.4.6 Traceability. Traceability shall be provided for all microcircuit quality assurance levels. Each delivered
microcircuit shall be traceable to the inspection and wafer lot(s) (see A.4.8.1.2).
A.3.4.6.1 Lot travelers. The manufacturer shall maintain lot travelers to document the completion of each required
processing step from wafer diffusion for class level S (and class level B radiation hardened devices) and beginning
with assembly for class level B with wafer lot identification through microcircuit assembly and screening test.
Travelers shall provide space for those items specified in A.4.8.1.3.7. The lot travelers shall provide traceability to all
prior processing steps and shall be identifiable through assembly and acceptance testing and shall be monitored by
the manufacturer's quality control organization.
A.3.4.7 Government source inspection. Government source inspection is required as detailed in the contract or
order.
A.3.5 Design and construction. Microcircuit design and construction shall be in accordance with all the
requirements specified herein and in the device specification or drawing.
59
MIL-PRF-38535K
APPENDIX A
A.3.5.1 Package. All devices supplied under this appendix except for class Y and class N shall be hermetically
sealed in glass, metal, or ceramic (or combinations of these) packages. No organic or polymeric materials (lacquers,
varnishes, coatings, adhesives, greases, etc.) shall be used inside the microcircuit package unless specifically
detailed in the device specification or drawing (e.g., polyimide interlayer dielectric). Alpha Particle protection is
permitted if permitted by the device specification or drawing. Desiccants may be used in the microcircuit package
(except for class level S devices where they are prohibited) only if each lot is subjected to and passes an internal
water vapor test, TM 1018 of MIL-STD-883, with a limit of 1,000 ppm at +100°C for a sample of 3(0) or 5(1). The
internal moisture content for class level S devices, after completion of all screening, shall not exceed 5,000 ppm at
+100°C. Polymer impregnations (backfill, docking, coating, or other uses of organic or polymeric materials to effect,
improve, or repair the seal) of the microcircuit packages shall not be permitted. Polymer coating used to effect or
improve marking adhesion shall not be applied over lid seal area.
NOTE: Packages containing beryllia shall not be ground, sand blasted, machined, or have other operations
performed on them which shall produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not
be placed in acids that shall produce fumes containing beryllium.
A.3.5.1.1 Polymeric materials. All polymeric materials of microcircuits shall meet the requirements of TM 5011 of
MIL-STD-883. Polymeric materials shall be approved by the acquiring or preparing activity.
A.3.5.1.2 Package configurations. Package configurations (e.g., 14-lead flat package, 16-lead DIP, 20-terminal
SQ.CCP, etc.) defined in MIL-STD-1835 shall be in accordance with the case outline of MIL-STD-1835. Package
configurations not defined in MIL-STD-1835 shall be specified in the applicable acquisition document, and require
approval of the acquiring activity.
A.3.5.2 Metals. External metal surfaces shall be corrosion-resistant or shall be plated or treated to resist
corrosion. External leads shall meet the requirements specified in A.3.5.6.
A.3.5.3 Other materials. External parts, elements or coatings including markings shall be inherently non-nutrient to
fungus and shall not blister, crack, outgas, soften, flow or exhibit defects that adversely affect storage, operation,
board assembly (e.g., permanently attached organic bumpers), or environmental capabilities of microcircuits
delivered to this appendix under the specified test conditions.
A.3.5.4 Design documentation. Design, topography, and schematic circuit information for all microcircuits supplied
under this appendix shall be available for review by the acquiring activity and the preparing activity upon request.
Control and traceability of design documentation for all new designs and redesigns shall follow the guidelines of
A.3.5.4.1 through A.3.5.4.4. This design documentation shall be sufficient to depict the physical and electrical
construction of the microcircuits supplied under this appendix, and shall be traceable to the specific part, drawing, or
type numbers to which it applies, and to the production lot(s) and inspection lot codes under which microcircuits are
manufactured and tested so that revisions can be identified.
A.3.5.4.1 Die topography. For semiconductor die (monolithic die or dice for inclusion in multichip microcircuits),
there shall be a photograph, drawing(s), mask list with revisions, or other representation defining the topography of
the elements of the die without the intraconnection pattern.
A.3.5.4.2 Die intraconnection pattern. There shall be an enlarged photograph(s) or transparency of diazotypes of
the mask set to the same scale as the die topography (see A.3.5.4.1) showing the specific intraconnection pattern
used to connect the elements on the die so that elements used and those not used can be easily determined. For
multichip microcircuits, this requirement shall apply to the substrate and all conductor pattern and active or passive
circuit elements deposited thereon, as well as to semiconductor die, as applicable.
60
MIL-PRF-38535K
APPENDIX A
A.3.5.4.3 Die to terminal interconnection. There shall be an enlarged photograph(s), transparency, or drawing(s)
to scale and of sufficient magnification to clearly depict the interconnection pattern for all connections made by wire or
ribbon bonding, beam leads or other methods between the semiconductor die, other elements of the microcircuit,
substrate(s) and package terminals or lands as applicable to the specific type of microcircuit supplied. If these
interconnections show clearly on the die intraconnection pattern photograph, an additional photograph or drawing is
not required.
A.3.5.4.4 Schematic diagrams. For microcircuits supplied under this appendix, the actual schematic diagram(s),
logic diagram(s), or combination thereof shall be maintained, sufficient to represent all electrical elements functionally
designed into the microcircuit together with their values (when applicable). For simple devices, this shall be a
complete detailed schematic circuit showing all functional elements and values. For complex devices, or those with
redundant detail, the overall microcircuit may be represented by a logic diagram in combination with schematic
details. Minimum details that shall be included are: A schematic presentation of input/output stages and protection
network details identified by appropriate pin numbers. Sufficient details to depict addressing or other device elements
where the test parameters, conditions, or limits are sensitive to the specific device schematics. Where parasitic
elements are important to the proper functioning of any microcircuit, they shall be included in the schematic diagram.
A.3.5.5 Internal conductors. Internal thin film conductors on semiconductor die or substrate (metallization stripes,
contact areas, bonding interfaces, etc.) shall be designed so that properly fabricated conductors shall not experience
in normal operation, over the operating temperature range (see A.3.1.3.31) (at worst case specified operating
conditions), a current density in excess of the maximum allowable value shown below for the applicable conductor
material:
Maximum allowable current
Conductor material
density
Aluminum (99.99 percent pure or doped) without glassivation or without
glassivation layer integrity test
2 X 105 A/cm2
Aluminum (99.99 percent pure or doped) glassivated (see A.3.5.5.4)
5 X 105 A/cm2
5 X 105 A/cm2
6 X 105 A/cm2
1 X 106 A/cm2
2 X 105 A/cm2
Refractory metals (Mo, W, Ti-W, and Ti-N) glassivated (see A.3.5.5.4)
Gold
Copper
All other
The current density shall be calculated at the point(s) of maximum current density (e.g., greatest current (see
A.3.5.5a) in accordance with unit cross section) for the specific device type and schematic or configuration. Individual
device calculations are not required when appropriate documented design rules or requirements have been used,
which limit or control the current density in the resulting design.
a. Use a current value equal to the maximum continuous current (at full fan-out for digitals or at maximum load
for linear) or equal to the simple time averaged current obtained at maximum rated frequency and duty
cycle with maximum load, whichever results in the greater current value at the point(s) of maximum current
density. This current value shall be determined at the maximum recommended supply voltage(s) and with
the current assumed to be uniform over the entire conductor cross-sectional area.
b. Use the minimum allowed metal thickness in accordance with manufacturing specifications and controls
including appropriate allowance for thinning experienced in the metallization step. The thinning factor over
a metallization step is not required unless the point of maximum current density is located at the step.
c. Use the minimum actual design conductor widths (not mask widths) including appropriate allowance for
narrowing or undercutting experienced in metal etching.
d. Areas of barrier metals, not intended by design to contribute to current carrying capacity, and non-
conducting material shall not be included in the calculation of conductor cross section.
Thick film conductors multichip substrates (metallization strips, bonding interfaces, etc.) shall be designated so that
no properly fabricated conductor shall dissipate more than 4 watts/cm2 when carrying maximum design current.
61
MIL-PRF-38535K
APPENDIX A
TABLE A-I. Testing guidelines for changes identified as major.
Major changes
Testing per group A, B, C, D, E herein or TM 5005 of
MIL-STD-883 (All electrical parameters in accordance
with the device specification or drawing 1/)
a.
b.
c.
d.
Doping material source concentration
Process technique
Group A and C-1 deltas (variables only when deltas are
required)
Diffusion profile
Group A and C-1 deltas (variables only when deltas are
required)
Die structure
Group A and C-1 deltas (variables only when deltas are
required)
Mask changes affecting die size or
active element
Variable group A, C-1 prior to shipment, and notify the
qualifying activity if new area is smaller/larger in
applicable package than previously qualified.
Wafer diameter
Group A, C-1 prior to shipment
Group D-3
Final die thickness
Passivation/glassivation
e.
Group A, C-1 and glass integrity test if current density is
over 2 x 105
f.
g.
h.
i.
Metallization changes
Die attach method
Group A, C-1, and B-5
D-3 and D-4
Die attach process
D-3 and D-4
Bond process
B-5 and D-3
j.
Bond wire material/dimension
Package or lid structure
Package or lid material
B-5 and D-3
k.
D-1 (variables), D-3, D-4, D-8 (lid torque) (variables)
D-3, D-4, D-5, D-6 (variables), and D-8 (lid torque)
(variables)
Package or lid dimension
Lead frame material
Lead frame dimension
Cavity dimension
Sealing profile
D-1 (variables), D-2, and D-8 (lid torque) (variables)
See A.4.4.2.7
D-1 (variables) and D-2
B-5, D-2, D-6 (variables), and D-8 (lid torque) (variables)
D-3, D-4, D-6 (variables), and D-8 (lid torque) (variables)
D-3, D-4, D-6 (variables), and D-8 (lid torque) (variables)
l.
Sealing material
Frame attach
B-3, D-3, D-4, D-6 (variables), and D-7 (adhesion of lead
finish) (variables)
Frame cleaning
B-3, D-2, D-3, and D-7 (adhesion of lead finish)
62
MIL-PRF-38535K
APPENDIX A
TABLE A-I. Testing guidelines for changes identified as major. - Continued.
Major changes
Testing per group A, B, C, D, E herein or TM 5005 of MIL-
STD-883 (All electrical parameters in accordance with the
device specification or drawing 1/)
m.
n.
Implementation of test methods
Critical documents (see A.4.8.1.3b)
Fab move
Notify qualifying activity (may involve test demonstration)
Notify qualifying activity (may involve test demonstration)
Group A and C
o.
p.
Assembly move
Group D in accordance with each package family (see
A.3.1.3.30) prior to ship
q.
r.
Test facility move
Notify qualifying activity
Scribe/die separation
5 SEM photographs of randomly selected die showing one
full edge of die front and back
s.
t.
Qualification/QCI procedures
Passivation for RHA
Notify qualifying activity
Group A, E, C-1, and glass integrity test if current density is
over 2 x 105
u.
Diffusion profile for RHA
Group A, E, and C-1 deltas (variables only when deltas are
required).
v.
w.
x.
Sinter/anneal for RHA
Group A, E, C-1, and B-5
Notify qualifying activity
Modification of programming algorithms
Flip chip devices:
Solder bump materials/dimension,
Wafer bumping process,
Notify qualifying activity and document in QM plan/PIDTP
(group A, B, C and D as applicable)
Underfill process and materials selection
1/ This table is for class level B subgroups only. For class level S, use the equivalent class level S subgroups.
A.3.5.5.1 Metallization thickness. For class level S microcircuits the metallization thickness shall be adequate to
satisfy the current density requirements of A.3.5.5.
A.3.5.5.2 Internal wire size and material. For class level S microcircuits, the internal wire diameter shall be 0.001
inch minimum (0.0254 mm) or of sufficient diameter to meet the minimum fusing requirements and bond pull strength
requirements with the approval of qualifying activity. The internal lead wire shall be the same metal as the die
metallization.
63
MIL-PRF-38535K
APPENDIX A
A.3.5.5.3 Internal lead wires. Internal lead wires or other conductors which are not in thermal contact with a
substrate along their entire length (such as wire or ribbon conductors) shall be designed to experience, at maximum
rated current, a continuous current for direct current, or a root mean square (RMS) current (peak current divided by
√2), for alternating or pulsed current, not to exceed the values established by the following relationship:
I = Kd 3/2
Where: I = Maximum allowed current in amperes.
d = Diameter in inches for round wire (or equivalent round wire diameter which would provide the
same cross-sectional area for other than round wire internal conductor).
K = A constant taken from table A-IA below for the applicable wire or conductor length and
composition used in the device.
Composition
"K" values for bond-to-bond total conductor length
Length > 0.040 inch (0.10 cm)
Length ≤ 0.040 inch (0.10 cm)
Aluminum
Gold
Copper
Silver
22,000
30,000
30,000
15,000
9,000
15,200
20,500
20,500
10,500
6,300
All other
A.3.5.5.4 Verification of glassivation layer integrity. Where the current density of aluminum metallization for a
device type to be qualified exceeds the allowable current density for unglassivated aluminum, the device type shall be
subjected to and pass the requirements of TM 2021 of MIL-STD-883 prior to qualification and the glassivation layer
integrity sample used along with and a photograph of the etched die shall be documented and maintained. One
resubmission is permitted at twice the sample size. Unless otherwise specified by the qualifying activity (QA), the
device type shall be tested after sealing (or after exposure to the time/temperature sealing profile) in the package
type that receives the highest temperature range during sealing for which the device type is to be qualified. Changes
in design, materials, or process, which affect current density or glassivation, shall also be evaluated using TM 2021 of
MIL-STD-883. This evaluation applies only when the current density requirements for unglassivated aluminum are
exceeded.
A.3.5.6 Package element material and finish.
A.3.5.6.1 Package material. Package body material shall be metal, glass, or ceramic in accordance with A.3.5.1.
64
MIL-PRF-38535K
APPENDIX A
A.3.5.6.2 Lead or terminal material. Lead or terminal material shall conform to one of the following compositions:
a. Type A: Iron-nickel-cobalt alloy: SAE-AMS-I-23011, class I, ASTM F15.
b. Type B: Iron-nickel alloy (41 percent nickel): SAE-AMS-I-23011, class 5, ASTM F30.
c. Type C: Co-fired metallization such as nominally pure tungsten. The composition and application processing
of these materials shall be subject to QA approval and submitted with application to test and as
otherwise requested by the QA.
d. Type D: Copper-core, iron-nickel ASTM F30 alloy (50.5 percent nickel). The core material shall consist of
copper (oxygen-free), ASTM B170, grade 2.
d. Type E: Copper-core ASTM F15 alloy. The core material shall consist of copper (oxygen-free)
ASTM B170, grade 2.
f. Type F: Copper (oxygen-free) ASTM B170, grade 2. This material shall not be used as an element of any
glass-to-metal seal structure.
g. Type G: Iron-nickel alloy (50.5 percent nickel): SAE-AMS-I-23011, class 2, ASTM F30.
h. Type H: Tin-lead alloy solder balls, bumps or columns.
i. Type J: Tin-lead alloy with copper spiral columns.
A.3.5.6.3 Microcircuit finishes. Finishes of all external leads or terminals and all external metal package elements
shall conform to either A.3.5.6.3.2 or A.3.5.6.3.3, as applicable. The use of pure tin, as an underplate or final finish, is
prohibited both internally and externally. The tin content of solder shall not exceed 97 percent. Tin shall be alloyed
with a minimum of 3 percent lead by weight. The lead finish designator (see A.3.6.2.7) shall apply to the finish of the
leads or terminals. The leads or terminals shall meet the applicable solderability and corrosion resistance
requirements. The other external metallic package elements (including metalized ceramic elements) shall meet the
applicable corrosion resistance requirements. Finishes on interior elements (e.g., bonding pads, posts, tabs) shall be
such that they meet the lead bonding requirements and applicable design and construction requirements. The use of
strike plates is permissible to the maximum thickness of 10 microinches (0.25 micrometer). All plating of finishes and
undercoats shall be deposited on clean, nonoxidized metal surfaces. Suitable deoxidation or cleaning operations
shall be performed before or between plating processes. All parts shall be capable of meeting the following
requirements of MIL-STD-883:
a. Test method 2004, lead integrity, test condition B1, B2, or D, or test method 2028, pin-grid package destructive
lead pull test, as applicable.
b. Test method 1009, salt atmosphere.
c. Test method 2003, solderability (plus time/temperature exposure of burn-in except for devices which have
been hot solder dipped or have undergone tin fusing after burn-in).
d. Test method 2025, adhesion of lead finish.
Note: Compliance to the above requirements shall be demonstrated when and as specified.
A.3.5.6.3.1 Finish thickness measurements. Lead finish thickness measurements shall be taken at the seating
plane on surface mount leads (such as J-bend and gull-wing type leads) and approximately halfway between the
seating plane and the tip of the lead on all other lead types. (This requirement is to avoid having the inspector select
a non-typical portion of the lead on which to perform the measurement.) On all lead shapes other than round, the
finish thickness measurement shall be taken at the crest of major flats. Measurements taken on the shorting bar shall
be correlated by direct measurement on the lead. Finish thickness measurements for package elements other than
leads shall be taken at the center of major flats. Finish thickness measurements shall be performed in accordance
with one of the following procedures:
a. ASTM B487.
b. ASTM B567.
c. ASTM B568.
The aforementioned ASTM methods are provided as reference methods to be used when the failure to pass other
finish requirements suggests deficiencies in plating thickness. Compliance to the finish thickness requirements shall
be demonstrated when and as specified.
65
MIL-PRF-38535K
APPENDIX A
A.3.5.6.3.2 Lead finish. The finish system on all external leads or terminals shall conform to one of the
combinations listed in table A-II, and to the thickness and composition requirements of table A-III. The finish system
shall also conform to the requirements of A.3.5.6.3.4 and A.3.5.6.3.5, where applicable.
A.3.5.6.3.3 Package element (other than lead or terminal) finish. External metallic package elements other than
leads and terminals (e.g., lids, covers, bases, and seal rings) shall meet the applicable environmental requirements
without additional finishing of the base materials or else they shall be finished so they meet those requirements using
a finish system conforming to one of the combinations listed in table A-IV, and conforming to the thickness and
composition requirements of table A-III. The finish system shall also conform to the requirements of A.3.5.6.3.4 and
A.3.5.6.3.5, where applicable.
A.3.5.6.3.4 Hot solder dip. The hot solder dip shall be homogeneous and shall be applied as follows:
a. All outlines with hot solder dip over compliant coating. The hot solder dip shall extend beyond the
effective seating plane. If the seating plane is not defined, the hot solder dip shall extend to within
0.040 inch (1.02 mm) of the lead/package interface and is bound by the lead/package interface and shall
not touch interface of lead/package body. For dual in line type termination forms (through hole and
surface mount), the plane of the two longest lead/package interfaces will define this bound. For leadless
chip carrier devices, the hot solder dip shall cover a minimum of 95 percent of the metallized side
castellation or notch and metallized areas above and below the notch, except the index feature, if not
connected to the castellation. Terminal area intended for device mounting shall be completely covered.
For top brazed and bottom brazed flat pack packages, the hot solder dip shall extend to within 0.070 inch
(1.78 mm) of the lead/package interface and is bound by the lead/package interface.
b. All outlines with hot solder dip over base metal or noncompliant coating. The solder shall extend to the
glass seal or point of emergence of the metallized contact or lead through the package wall. If solder is
applied up to the seal, a hermeticity test (TM 1014 of MIL-STD-883, and table IA footnote 20/ herein
shall subsequently be performed and passed. For leadless chip carrier devices, the hot solder dip shall
completely cover the metallized side castellation or notch and metallized areas above and below the
notch, except the index feature if not connected to the castellation.
FIGURE A-1. Solder dipping area when seating plane is not defined .
66
MIL-PRF-38535K
APPENDIX A
A.3.5.6.3.5 Tin-lead plate. Tin-lead plate may be fused after plating before or after burn-in by heating above its
liquidus temperature. Tin-lead plate shall be visually inspected after fusing and shall exhibit a dense, homogeneous,
and continuous coating. The visual inspection after fusing shall be conducted on a sample basis by the manufacturer
as an in-process control. Visual inspection of the fusing shall be performed at a frequency sufficient to assure
continuous compliance with these requirements on the finished product. The manufacturer shall monitor the tin-lead
content of the leads to assure a minimum of 3 percent lead by weight.
A.3.5.7 Die plating and mounting. Pure glass shall not be used for microcircuit die mounting. Metal glass die
mounting and Silver Cyanate Ester (see Rome Labs letter 31 May 1994 for guidelines) are acceptable with QA
approval. (Contact the preparing activity for the Rome Labs letter.) Electroplated and electroless plated gold backing
on dice shall not be used, with the exception of gallium arsenide (GaAs) dice which may use electroplated gold
backing.
TABLE A-II. Lead finish systems.
Applied over
Gold plate
Required underplate
Electroless nickel 1/
Electroplated
nickel
Finish
None
X
Hot solder dip 2/
Hot solder dip 2/
Hot solder dip 2/
Hot solder dip 2/
Hot solder dip 2/
X
X
X
X
X
X
Tin-lead plate 3/
Tin-lead plate 3/
Tin-lead plate 3/
X
X
X
X
X
Gold plate
Gold plate
Palladium
X
X
Gold flash palladium
1/ Electroless nickel shall not be used as the undercoat on flexible or semi-flexible leads (see 3.3.1 and 3.3.2 of
TM 2004 of MIL-STD-883) and shall be permitted only on rigid leads or package elements other than leads.
2/ Hot solder dip shall be applied in accordance with A.3.5.6.3.4.
3/ Fusing of tin-lead plating is permitted in accordance with A.3.5.6.3.5.
67
MIL-PRF-38535K
APPENDIX A
TABLE A-III. Coating thickness and composition requirements.
Thickness
(microinch/micrometer)
Coating
Coating composition requirements
Minimum 1/
Maximum 2/
Hot solder dip (for all
round leads) 3/
60/1.52
NS
The solder bath shall have a nominal composition
of Sn60 or Sn63.
Hot solder dip (for all
shapes other than round
leads which have ≤ 25 mil
pitch) 3/
150/3.80
200/5.08
300/7.62
NS
NS
NS
The solder bath shall have a nominal composition
of Sn60 or Sn63.
The solder bath shall have a nominal composition
of Sn60 or Sn63.
Hot solder dip (for all
shapes other than round
leads with > 25 mil pitch)
3/
Shall consist of 3 to 50 percent by weight lead
(balance nominally tin) homogeneously co-
deposited. Shall contain no more than 0.05
percent by weight co-deposited organic material
measured as elemental carbon. 5/
Tin-lead plate (as plated)
4/
200/5.08
50/1.27
NS
Tin-lead plate (fused) 4/
Gold plate
225/5.72
Shall contain a minimum of 99.7 percent gold.
Only cobalt shall be used as the hardener.
50/1.27
50/1.27
350/8.89
250/6.35
The introduction of organic addition agents to
nickel bath is prohibited. Up to 40 percent by
weight cobalt is permitted as a co-deposit.
Nickel plate (electroplate)
Nickel plate (electroless)
The introduction of organic additive agents to
nickel bath is prohibited.
50/1.27
20/0.51
20/0.51
350/8.89
84/2.13
84/2.13
Nickel cladding
Palladium
Gold flash palladium
1/ Package elements having noncompliant coatings are permitted provided they are subsequently hot solder dipped
in accordance with A.3.5.6.3.4b.
2/ NS = Not specified.
3/ See A.3.5.6.3.4.
4/ See A.3.5.6.3.5.
5/ The maximum carbon content (and minimum lead content in tin-lead plate) shall be determined by the
manufacturer on at least a weekly basis. The determination of carbon and lead content may be made by any
accepted analytical technique (e.g., for carbon: pyrolysis, infrared detection (using an IR212, IR244 infrared
detector, or equivalent); for lead: X-ray fluorescence, emission spectroscopy) so long as the assay reflects the
actual content in the deposited finish.
68
MIL-PRF-38535K
APPENDIX A
TABLE A-IV. Package element (other than leads/terminals) finish systems.
Finish
Applied over
Gold plate
Required underplate
Electroplated
nickel 1/
Electroless
nickel 1/
Nickel cladding
1/
None
X
Hot solder dip
Hot solder dip
Hot solder dip
Hot solder dip
Hot solder dip
Hot solder dip
Hot solder dip
X
X
X
X
X
X
X
X
X
Tin-lead plate 2/
Tin-lead plate 2/
Tin-lead plate 2/
Tin-lead plate 2/
X
X
X
X
X
X
X
Gold plate 3/
Gold plate 3/
Gold plate 3/
Electroplated nickel 1/
Electroless nickel 1/
Nickel cladding 1/
X
X
X
Palladium
X
X
Gold flash palladium
1/ Combinations of electroplated nickel and electroless nickel and nickel cladding are permitted.
2/ Fusing of tin-lead plate is permitted in accordance with A.3.5.6.3.5.
3/ Multilayer gold and nickel finish structures are acceptable provided the outer gold layer meets a minimum
thickness of 25 microinches (0.635 micrometer), the total of the gold layers meet a minimum thickness of 50
microinches (1.27 micrometers), and each of the nickel undercoats meet the thickness requirements of table
A-III with the total nickel thickness not to exceed 450 microinches (11.43 micrometers). For multilayer finish
structures, nickel plate, nickel cladding, or gold plate are permitted on the base metal.
A.3.5.8 Glassivation. All microcircuits shall be coated with a transparent glass or other approved coating, except
where glassivation is omitted by documented design rules (e.g., probe opening, fuse pads, etc.) The minimum
glassivation thickness shall be 6,000 Å (600 nm) for Si02, 2,000 Å (200 nm) for Si3N4, or approved thicknesses for
approved coatings. The composition and minimum thickness of other approved coatings are subject to approval by
the QA, and must be included in the manufacturer’s QM plan. The glassivation/nitridation shall cover all electrical
conductors except the bonding or test pads. NOTE: For GaAs microwave microcircuits, the glassivation or nitride
dielectric shall cover the semiconductor regions (e.g., field effect transistor (FET)) of the device and planar thin film
resistors as a minimum. Furthermore; for class level S devices, the glassivation or nitride dielectric shall cover
regions where conductors are separated by less than the minimum 1 mil particle size detectable by a PIND test. For
RF/microwave GaAs microcircuits, the manufacturer shall define appropriate glassivation thickness requirements for
the technology in the internal baseline documentation.
69
MIL-PRF-38535K
APPENDIX A
A.3.5.9 Die thickness. Appropriate die thickness requirements for each product or process shall be defined in the
manufacturer's baseline documentation. This thickness shall be sufficient to avoid die cracks due to handling, die
attach, wire bonding or other process stresses, which could lead to latent field failure.
A.3.5.10 Laser scribing. For class level S microcircuits, laser scribing shall not be used for die separation except
for backside scribing of silicon on sapphire (S0S) wafers. Laser trim of resistors and shorting bars and laser scribed
package external markings are not prohibited unless otherwise specified.
A.3.5.11 Internal lead separation for class level S devices. For class level S devices, the minimum separation of
the internal leads (excluding conductors which are at the die or substrate potential) from the unglassivated surface of
the die shall be a minimum of 1.0 mil. This design requirement shall be verified during design verification,
qualification and during group B internal visual and mechanical tests in accordance with TM 5005 of MIL-STD-883.
A.3.6 Marking of microcircuits. Marking shall be in accordance with the requirements of this appendix, and the
identification and marking provisions of the device specification or drawing. The marking shall be legible and
complete, and shall meet the resistance to solvents requirements of TM 2015 of MIL-STD-883. When laser marking
is performed, it shall be clearly visible through those conformal coatings approved for use in MIL-I-46058, (see TM
2015 of MIL-STD-883 if contrasting material or ink is used to highlight the trace). Laser marked metal surfaces shall
have been submitted to and passed all group D test requirements. If any special marking is used, it shall in no way
interfere with the marking required herein, and shall be visibly separated from the required marking. The following
marking shall be placed on each microcircuit. If any special marking (e.g., altered item drawing number) is used by
the device supplier or user/equipment contractor, it shall be in addition to the existing/original marking as required
herein and shall be visibly separate from, and in no way interfere with, the marking required herein. The following
shall be placed on each microcircuit:
a. Index point (see A.3.6.1).
b. PIN (see A.3.6.2).
c. Identification codes (see A.3.6.3).
d. Manufacturer's identification (see A.3.6.4 and A.3.6.5).
e. Country of origin (see A.3.6.6).
f. Compliance indicators (see A.3.6.7).
g. Serialization, when applicable (see A.3.6.8).
h. Special marking (see A.3.6.9, A.3.6.9.1).
i. Electrostatic discharge (ESD) sensitivity identifier, if applicable (see A.3.6.9.2).
NOTE: All devices shall be marked by the manufacturer in such a manner as to leave space for additional unique
marking (assigned and applied by the user or called out in the order or contract).
A.3.6.1 Index point. The index point, tab, or other marking indicating the starting point for numbering of leads or
for mechanical orientation shall be as specified (see MIL-STD-1835) and shall be designed so that it is visible from
above when the microcircuit is installed in its normal mounting configuration. The outline or solid equilateral
triangle(s) (∆) which may be used as an electrostatic identifier (see A.3.6.9.2), may also be used as the pin 1
identifier.
70
MIL-PRF-38535K
APPENDIX A
A.3.6.2 PIN. Each microcircuit shall be marked with the complete PIN. The PIN may be marked on more than one
line provided the PIN is continuous except where it "breaks" from one line to another. The PIN system shall be as
described in 3.6.2a and 3.6.2b for microcircuits produced in accordance with this appendix and either an SMD, or
device specification. For devices produced in accordance with this appendix, which are not documented on SMDs,
the PIN shall be the vendor’s generic part number or the contractor’s part number as applicable.
A.3.6.2.1 Military designator. Any device that does not meet all the requirements of this appendix and the
applicable device specification, except as allowed by H.3.3, shall not be marked M38510 and shall not make
reference to MIL-M-38510 or MIL-PRF-38535.
A.3.6.2.2 RHA designator. A "/" or "-" indicates no radiation hardness assurance. Letters M, D, P, L, R, F, G, or H
designator levels are defined in A.3.4.1.3.
A.3.6.2.3 Device specification. When used in association with this specification or appendix (e.g., QML), the
M38510 device specification shall consist of three digits from 001 to 999 as applicable.
A.3.6.2.4 Device type. The device type number shall be as specified in the device specification or SMD. The
numbers shall consist of two digits assigned sequentially, from 01 to 99, within each device specification or SMD.
A.3.6.2.5 Device class. The device class shall be designated by a single letter identifying the quality assurance
level. For devices built compliant to this appendix and documented on a one part-one part number SMD, the device
class designator shall be an 'M'.
A.3.6.2.6 Case outline. The case outline shall be designated by a single letter assigned to each outline.
A.3.6.2.7 Lead finish. Lead frame or terminal material and finish shall be as specified in A.3.5.6. The lead finish
shall be designated by a single letter in table A-V.
TABLE A-V. Lead finish.
Lead finish letter
Lead frame or terminal material and finish (see note below)
Types A, B, C, D, E, F, or G with hot solder dip
A
B
C
D
E
F
Types A, B, C, D, E, F, or G with tin-lead plate
Types A, B, C, D, E, F, or G with gold plate
Types A, B, C, D, E, F, or G with palladium
Types A, B, C, D, E, F, or G with gold flash palladium
Types H, J with tin-lead alloy as applicable to device document.
Types A, B, C, D, E, F or G with finishes A, B, or C (see note below)
X
NOTE: Finish letter "X" shall not be marked on the microcircuit or its packaging. This designation is provided for
use in drawings, part lists, orders, or other documentation where lead finishes A, B, or C are all considered
acceptable and interchangeable without preference. For Government logistic support, the A lead finish shall be
acquired and supplied to the end user when the X is included in the PIN for lead finish. If the PIN is not available
with the A lead finish, the same PIN shall be acquired except with the B or C lead finish designator as determined
by availability. Type C terminal material is a fired on metallization used with leadless chip carriers.
A.3.6.2.8 Drawing designator. For new one part-one part number drawings without existing device specifications,
the first two characters of the drawing designator shall consist of the last two digits of the year and the last three
characters shall consist of unique characters assigned to the drawing by DLA Land and Maritime. When an existing
MIL-M-38510 device specification PIN is converted to a one part-one part number PIN via a substitution statement,
the first two characters of the drawing designator of the one part-one part number shall be replaced with the first two
digits of MIL-M-38510 (e.g., 38), and the last three characters of the one part-one part number shall be replaced with
the three digit identifier assigned to the device specification (e.g., M38510/00101BAC shall become
5962-3800101BAC).
71
MIL-PRF-38535K
APPENDIX A
A.3.6.3 Identification codes. Identification codes shall be as follows:
A.3.6.3.1 Class level B die fabrication date code. Class level B microcircuits may be marked with a unique code to
identify the year and quarter in which the die fabrication was started (or completed at the manufacturer's
predesignated option). The first character of the code shall be the last digit of the year in which die fabrication started
(or completed at the manufacturer's predesignated option). The second character of the code shall be a letter (A, B,
C, or D) respectively designating the first quarter (weeks 1 - 13), the second quarter (weeks 14 - 26), third quarter
(weeks 27 - 39), or fourth quarter (weeks 40 - 52 or 53) of the calendar year of die fabrication.
A.3.6.3.2 Inspection lot identification code for class levels S and B. Microcircuits shall be marked with a unique
code to identify the inspection lot (see A.3.1.3.7 and A.3.1.3.8) and identify the first or the last week of the period (6
weeks maximum) during which devices in that inspection lot were sealed. At the option of the manufacturer, the
actual week of seal may be used. The first two numbers in the code shall be the last two digits of the number of the
year, and the third and fourth numbers shall be two digits indicating the calendar week of the year. When the number
of the week is a single digit, it shall be preceded by a zero. Reading from left to right or from top to bottom, the code
number shall designate the year and week, in that order. When two or more different inspection lots (or class level S
sublots), each having the same part number, are to be marked with the same identification code, a unique suffix letter
representing each additional inspection lot (or class level S sublot) shall appear immediately following the
identification code except the unique suffix letter may be omitted when an alternate lot identifier is used which
maintains the unique traceability required. Once assigned, the inspection lot identification code shall not be changed.
NOTE: These die fabrication date codes may be combined with the inspection lot identification code as shown:
FAB YR
6
1986
FAB QTR
B
2nd qtr
ASSY YR
87
1987
ASSY WK
Unique suffix
A
10
10
First lot
A.3.6.4 Manufacturer's identification. Microcircuits shall be marked with the name or trademark of the
manufacturer. The identification of the equipment manufacturer may appear on the microcircuit only if the equipment
manufacturer is also the microcircuit manufacturer.
A.3.6.5 Manufacturer's designating symbol. The microcircuit manufacturer's designating symbol or CAGE code
may also be marked on each device in addition to the manufacturer's identification. If the microcircuit manufacturer's
designating symbol or CAGE code number is marked, it shall be as assigned by the Defense Logistics Information
Service (DLIS). The designating symbol shall be used only by the manufacturer to whom it has been assigned and
only on those devices manufactured at that manufacturer's plant. In the case of small microcircuits, the
manufacturer's designating symbol may be abbreviated by omitting the first "C" in the series of letters.
A.3.6.6 Country of origin. The identifier of the country in which assembly is performed shall be marked on all
devices supplied under this appendix. If abbreviations are used, a cross reference should be published in the
manufacturer’s data books or catalogs.
A.3.6.7 Compliance indicator/certification mark. The compliance indicator "C" shall be marked on all devices built
in compliance to this appendix. The “D” certification mark shall be used for diminishing manufacturing sources (DMS)
product using the alternate die/fab requirements (see A.3.2.2) in lieu of the “C” certification mark for product built to
this appendix. The compliance indicator "C" shall be replaced with a "Q" or "QML" certification mark or the "Q" or
"QML" certification mark added when product is built to a QML process (see A.3.1). The "J" or "JAN" certification
mark may not be used on devices built in compliance to this appendix.
A.3.6.8 Serialization. Prior to the first recorded electrical measurement in screening each class level S
microcircuit, and when specified, each class level B microcircuit shall be marked with a unique serial number
assigned consecutively within the inspection lot. This serial number allows traceability of test results down to the
level of the individual microcircuit within that inspection lot. For class level S, inspection lot records shall be
maintained to provide traceability from the serial number to the specific wafer lot from which the devices originated.
72
MIL-PRF-38535K
APPENDIX A
A.3.6.9 Marking location and sequence. The certification mark, the PIN, identification codes and ESD identifier
shall be located on the top surface of leadless or leaded chip carriers, pin grid array packages, flat packages, or
dual-in-line configurations and on either the top or the side of cylindrical packages (TO configurations and similar
configurations). When the size of a package is insufficient to allow marking of special process identifiers on the top
surface, the backside of the package may be used for these markings except the ESD identifier, if marked, shall be
marked on the top. Button cap flat packs with less than or equal to 16 leads may have the identifier marked on the
ceramic. Backside marking with conductive or resistive ink shall be prohibited.
A.3.6.9.1 Beryllium oxide package identifier. If a microcircuit package contains beryllium oxide (see A.3.5.1 note),
the part shall be marked with the designation "Be0".
A.3.6.9.2 Electrostatic discharge (ESD) sensitivity identifier. Microcircuits shall be ESD classified in accordance
with A.3.4.1.4, however, ESD classification marking is not required. The manufacturer shall have an option of no
ESD marking, marking a single ESD triangle or marking in accordance with the ESD device classification defined in
test method 3015 of MIL-STD-883. Because it may no longer be possible to determine the ESD classification from
the part marking, the device Discharge Sensitivity Classification shall be as listed in MIL-HDBK-103 or QML-38535.
A.3.6.10 Marking on container. See A.5.2.2 for additional marking requirements.
A.3.6.11 Marking option for controlled storage of class level B. Where microcircuits are subjected to testing and
screening in accordance with some portion of the quality assurance requirements and stored in controlled storage
areas pending receipt of orders requiring conformance to the same or a different level, the inspection lot identification
code shall be placed on the microcircuit package along with the other markings specified in 3.6 sufficient to assure
identification of the material. As an alternative, if the microcircuits are stored together with sufficient data to assure
traceability to processing and inspection records, all markings may be applied after completion of all inspections to
the specified level.
A.3.6.12 Marking option for qualification or quality conformance inspection (QCI). The manufacturer has the option
of marking the entire lot or only the sample devices to be submitted to qualification or groups B, C, and D (and E if
applicable) QCI, as applicable. If the manufacturer exercises the option to mark only the sample devices, the
procedures shall be as follows:
a. The sample devices shall be marked prior to performance of groups B, C, and D (and E if applicable)
qualification or QCIs, as applicable.
b. At the completion of inspection, the marking of the sample devices shall be inspected for conformance with the
requirements of A.3.6.
c. The inspection lot represented by the conforming qualification or quality conformance sample shall then be
marked and any specified visual and mechanical inspection performed.
d. The marking materials and processing applied to the inspection lot shall be to the same specifications as those
used for the inspection sample.
73
MIL-PRF-38535K
APPENDIX A
A.3.6.13 Remarking. If sealed devices are remarked (to change or correct the marking as specified in A.3.6), the
reason for remarking, and a description of the process shall be recorded in the qualification test report and quality
conformance test record. In addition to the tests described below for qualification of the remarking procedure,
subgroup B-2 and internal visual and mechanical tests (TM 2014 of MIL-STD-883 with sample size/(accept no.) of
1(0) for class B devices and subgroups B-2a and B-2b (TM 2014 of MIL-STD-883 only) for class level S devices shall
be performed on each remarked lot to assure marking permanency and that markings and device type coincide. An
appropriate group A test, with a sample size/(accept no.) of 116(0), (100 percent for class level S) may be performed,
in lieu of internal visual and mechanical tests, to demonstrate that the markings and device types coincide.
Remarking procedures shall be approved by the qualifying activity. Approval shall be required once only for each
package material (e.g., lid, base) composition (regardless of package configuration), or at change of remarking
procedures or materials. For qualification of the remarking procedure, a sample of remarked devices shall be tested
to the following test methods according to TM 5005 of MIL-STD-883:
a. TM 2015, resistance to solvents (3 devices).
b. TM 1011, thermal shock (test condition B, 15 cycles minimum).
c. TM 1004, moisture resistance.
d. TM 1009, salt atmosphere.
NOTE: Electrical tests are not required. Visual inspection, after each test in accordance with applicable failure
criteria, shall be conducted.
A.3.7 Workmanship. Microcircuits shall be manufactured, processed, and tested in a careful and workmanlike
manner in accordance with good engineering practice, with the requirements of this appendix, and with the
production practices, workmanship instructions, inspection and test procedures, and training aids prepared by the
manufacturer in fulfillment of the quality assurance program (see A.4.8 herein).
A.3.7.1 Rework provisions. All rework (see A.3.1.3.16) permitted on microcircuits acquired under this appendix
shall be accomplished in accordance with procedures and safeguards documented in accordance with A.4.8.1.1.6
and available for review by the preparing and acquiring activity. In addition, all rework operations shall be clearly
identified on each process flowchart. Allowable rework of sealed packages includes recleaning of any microcircuit or
portion thereof, any rebranding (see A.3.6.13) to correct defective marking and lead straightening (provided the
reworked devices meet the requirements of A.4.6.2 for conditions of leads). For monolithic wafers of any class, the
strip and redeposition of a layer or additional processing to correct a nonconformance to a specification limit is not
allowed, except for the strip and redeposition of sacrificial layer(s) used exclusively as a masking function (e.g.,
photoresist, nitride, nitride glass). Documenting rework of these sacrificial layers on the flow chart is not required.
Continuation of processing is permitted and is considered allowable rework provided the manufacturer assures,
through evaluation, that no alteration in material film properties occurs (e.g. oxidation, corrosion, grain size, film
stress, adhesion) and baselined limits are met. Manufacturer shall document rework/continuation process work. The
strip and redeposition of backside metallization is considered allowable rework. No delidding or package opening for
rework shall be permitted for microcircuits of any class. For monolithic microcircuit wafers of any class, the strip and
redeposition of a layer or additional processing to correct a nonconformance to a specification limit is not allowed,
except as specified above. For class level S, any assembly rework operation prior to package seal is not allowed,
except as specified in A.3.7.1.1. Other than already stated in the rework provisions above, rework is not allowed for
class level S product without substantiating data and written approval of the qualifying activity.
A.3.7.1.1 Rebonding of monolithic devices. Visual criteria for rebonding and rebonding limitations for class level B
monolithic microcircuits shall be in accordance with TM 2010, Internal Visual (Monolithic), of MIL-STD-883, (see
3.2.1.4i and 3.2.1.5 of TM 2010 of MIL-STD-883). For class level S devices, rebonding is not allowed without
substantiating data and written approval of the qualifying activity. Rebonding of class level B shall be limited to the
bonding operation only.
74
MIL-PRF-38535K
APPENDIX A
A.4 VERIFICATION
A.4.1 Responsibility for inspection. Unless otherwise specified in the contract or order, the contractor is
responsible for the performance of all inspection requirements as specified herein and in the device specification or
drawing.
A.4.1.1 Inspection during manufacture. The manufacturer shall establish and maintain in-process production
controls, quality controls and inspections at appropriately located points in the manufacturing process in accordance
with the procedures described in A.4.8.1.1 to assure continuous control of quality of materials, subunits, and parts
during manufacture and testing. These controls and inspections shall be adequate to assure compliance with the
applicable acquisition documentation and quality standards of microcircuits manufactured to this appendix and the
applicable device specification or drawing.
A.4.1.1.1 Metal package isolation test for class level S devices. Prior to die mounting, each metal-bodied package
with leads glass-isolated within .005 inch (0.13 mm) of the metal body shall have 600 V dc applied between the case
and leads not connected to the case. Packages which exhibit leakage greater than 100 nA shall be rejected.
A.4.1.2 Control and inspection of acquisition sources. The manufacturer shall be responsible for assuring that all
supplies and services used in the manufacture and test of microcircuits conform to all the requirements of this
appendix, the device specification or drawing, and other provisions of the applicable acquisition documentation.
A.4.1.3 Control and inspection records. The manufacturer shall maintain objective evidence documenting that
each lot has been subjected to all processing controls, inspections, and tests accomplished in accordance with A.3
and A.4 herein. Records shall be retained as specified in A.4.8.1.2.
A.4.1.4 Government source inspection (GSI). Source inspection (GSI and contractor source inspection (CSI))
shall be required only when specified in the order or subcontract. Notification of test initiation shall be given to the
acquiring activity.
A.4.1.5 Manufacturer control over its distributors. The manufacturer shall be responsible for assuring that its
distributors maintain adequate controls to assure that products sold are of the same quality as products acquired
directly from the manufacturer.
A.4.1.6 Distributor inventory, traceability and handling control. Distributors shall, as a minimum, maintain adequate
inventory control system, traceability documentation required by this specification and their appropriate certification,
adequate handling, storage, and repackaging methods to protect quality and prevent damage and degradation of
products.
A.4.2 Solderability. All parts shall be capable of passing the solderability tests in accordance with TM 2003 of MIL-
STD-883, on delivery.
A.4.3 General inspection conditions. The general requirements of MIL-STD-883 shall apply.
A.4.3.1 Classification of inspections and tests. The inspections and tests required to assure conformance to the
specified quality assurance levels of microcircuits or lots thereof are classified as follows:
Requirement
Paragraph
Qualification procedures
Quality conformance inspection
Screening
Test results
Quality Assurance Program
A.4.4
A.4.5
A.4.6
A.4.7
A.4.8
75
MIL-PRF-38535K
APPENDIX A
A.4.3.2 Sampling. Statistical sampling for qualification and quality conformance inspections (QCIs) shall be in
accordance with the sampling procedures of appendix D of this specification, and as specified in the device
specification or drawing, as applicable. Reserve sample devices may be tested with the subgroups to provide
replacements in the case of test equipment failure or operator error (see A.4.3.5 and A.4.4.2.1.1). These devices
shall be used in predesignated order. Initial samples (and added samples, when applicable) shall be randomly
selected from the inspection lot or sublot, as applicable. After a test has started, the manufacturer may add an
additional quantity to the initial sample, but this may be done only once for any subgroup with a specified sample size
number (accept number). Add-on samples are not allowed for fixed sample size subgroups or for resubmitted lots.
The added samples shall be subjected to all the tests within the subgroup. The total samples (initial and added
samples) shall determine the new acceptance number. The total defectives of the initial and second sample shall be
additive and shall comply with the specified sample size number (accept number). The manufacturer shall retain
sufficient microcircuits from the lot to provide for additional samples.
A.4.3.2.1 Disposal of samples. Devices subjected to destructive tests or which fail any test shall not be shipped on
the contract or order as acceptable product. They may, however, be delivered at the request of the acquiring activity
if they are isolated from, and clearly identified so as to prevent their being mistaken for acceptable product. Sample
microcircuits, from lots which have passed quality assurance inspections or tests and which have been subjected to
mechanical or environmental tests specified in groups B, C, and D inspection and not classified as destructive, may
be shipped on the contract or order provided the test has been proved to be nondestructive (see A.4.3.2.3) and each
of the microcircuits subsequently passes final electrical tests in accordance with the applicable device specification.
A.4.3.2.2 Destructive tests. The following MIL-STD-883 tests, or other test as specified, shall be classified as
destructive:
Internal visual and mechanical (TM 2014).
Bond strength.
Solderability (for lead finishes B and C).
Moisture resistance.
Lead integrity.
Salt atmosphere.
SEM inspection for metallization.
Steady-state life test (accelerated).
Die shear strength test.
Total dose radiation hardness test.
Neutron irradiation.
Electrostatic discharge (ESD) sensitivity classification test.
Lid torque test.
Adhesion of lead finish.
Vibration, variable frequency.
Internal water vapor test.
Single-event-effects (ASTM F1192 or JESD57)
Dose-Rate Upset
Solder column pull test (TM 2038)
All other mechanical or environmental tests (other than those listed in A.4.3.2.3), shall be considered destructive
initially, but may subsequently be considered nondestructive upon accumulation of sufficient data to indicate that the
test is nondestructive. The accumulation of data from five repetitions of the specified test on the same sample of
product, without evidence of cumulative degradation or failure to pass the specified test requirements in any
microcircuit in the sample, is considered sufficient evidence that the test is nondestructive. Any test specified as a
100 percent screen shall be considered nondestructive for the stress level and duration or number of cycles applied
as a screen.
76
MIL-PRF-38535K
APPENDIX A
A.4.3.2.3 Nondestructive tests. The following tests are classified as nondestructive:
Barometric pressure
** Steady-state life
** Intermittent life
*** Solderability (for lead finish A only)
Seal
External visual
Internal visual (pre-cap)
** Burn-in screen
Radiography
Particle impact noise detection (PIND)
Physical dimensions
Nondestructive 100 percent bond pull test where stress does not exceed the specified pull force and
positive tolerance
Resistance to solvents
C-SAM (TM 2030)
** When the test temperature exceeds the maximum specified junction temperature for the device (including
maximum specified for operation or test), these tests may be considered destructive. To ship these tested
devices, the manufacturer shall have data to support that the test is not destructive and has not degraded the
device.
*** For glass sealed devices, lead finish A shall be considered nondestructive unless electrical test, visual inspection,
or other evaluation shows that package integrity or electrical performance has been degraded.
A.4.3.3 Formation of lots. Microcircuits shall be segregated into identifiable production lots as defined in A.3.1.3.6
as required to meet the production control and inspection requirements of A.4.8. Microcircuits shall be formed into
inspection lots as defined in A.3.1.3.7 and A.3.1.3.8 as required to meet the quality assurance inspection and test
requirements of this specification.
Wafer lot processing, as a homogeneous group (see A.3.1.3.11), shall be accomplished by any of the following
procedures, providing process schedules and controls are sufficiently maintained to assure identical processing in
accordance with process instructions of all wafers in the lot:
a. Batch processing of all wafers in the wafer lot through the same machine process step(s) simultaneously.
b. Continuous or sequential processing (wafer by wafer or batch portions of wafer lot) of all wafers through the
same machine or process step(s).
c. Parallel processing of portions of the wafer lot through multiple machines or process stations on the same
certified line, provided statistical quality control assures and demonstrates correlation between stations and
separately processed portions of the wafer lot.
77
MIL-PRF-38535K
APPENDIX A
A.4.3.3.1 Resubmission of failed lots. Resubmitted lots shall be kept separate from new lots and shall be clearly
identified as resubmitted lots. When any lot submitted for qualification or quality conformance inspection fails any
subgroup requirement of group B, C, or D (and E if applicable) tests, it may be resubmitted once for that particular
subgroup using tightened inspection criteria (as defined in D.4.2). Resubmission for group A inspection failure is not
permitted. In case of group B, subgroup B-2a failure, the entire lot may be remarked as defined in A.3.6.13. The
remarked lot shall not be acceptable for alternate group B (class level B only) coverage of a standard lot (see
A.4.5.8.2 for recovery). For fixed sample size subgroups, lots may be resubmitted one time only at double the
sample size with zero failures allowed. All submissions shall be subject to the sampling requirements of A.4.3.2. A
second resubmission (class level S lots shall be resubmitted one time only) using a second tightened inspection
criteria is permitted only if failure analysis is performed to determine the mechanism of failure for each failed
microcircuit from the prior submissions and it is determined that failure(s) is (are) due to:
a. A defect that can be effectively removed by rescreening or reworking the entire lot (see A.3.7.1).
b. Random type defects which do not reflect poor basic device design or poor basic processing procedures.
In all instances where analysis of the failed devices indicates that the failure mechanism is due to poor basic
processing procedures, a basic design fault or non-screenable defects, the lot shall not be resubmitted.
A.4.3.4 Test method deviation. Deviations from test methods or test circuits specified are allowed provided that it
is demonstrated to the preparing activity that such deviations in no way relax the requirements of this appendix and
that they are approved by the preparing activity before testing is performed. The preparing activity shall be notified by
the device manufacturer of any proposed test method deviation. For proposed electrical test deviations, schematic
wiring diagrams of the test equipment shall be made available for review.
A.4.3.5 Procedure in case of test equipment failure or operator error. Whenever a microcircuit is believed to have
failed as a result of faulty test equipment or operator error, unless otherwise specified in the test method, the failure
shall be entered in the test record which shall be retained for review along with a complete explanation verifying why
the failure is believed to be invalid.
NOTE: ESD failures shall be counted as rejects and not be attributed to equipment/operator error for screening,
group A, and end-point electrical tests of TM 5005 of MIL-STD-883.
A.4.3.5.1 Procedure for sample tests. When it has been established that a failure is due to test equipment failure
or operator error and it has been established that the product has not been damaged or degraded, a replacement
microcircuit from the same inspection lot may be added to the sample. The replacement microcircuit shall be
subjected to all those tests to which the discarded microcircuit was subjected prior to its failure and to any remaining
specified tests to which the discarded microcircuit was not subjected prior to its failure. The manufacturer, at their
own risk, has the option of replacing the failed microcircuit and continuing with the tests before the validity of the test
equipment failure or operator error has been established.
A.4.3.5.2 Procedure for screening tests. When it has been established that lot failure(s) during screening test(s)
are due to operator or equipment error and it has been established that the remaining product has not been damaged
or degraded, the lot or surviving portion of the lot, as the case may be, may be resubmitted to the corrected screening
tests(s) in which the error occurred. Failures verified as having been caused by test equipment failure or operator
error shall not be counted in the PDA calculation (when applicable).
A.4.3.5.3 Failure and corrective action reports. When the procedures of A.4.3.5.1 and A.4.3.5.2 are utilized in
continuing sample tests or resubmitting lots for screening tests, the manufacturer shall document the results of their
failure investigations and corrective actions and shall make this information available to the Government Quality
Assurance Representative (QAR), the acquiring activity, or the qualifying activity, as applicable.
A.4.3.6 Electrical test equipment verification. The manufacturer shall verify the measurement/operation
characteristics of the electrical test equipment in accordance with 4.5 of MIL-STD-883.
78
MIL-PRF-38535K
APPENDIX A
A.4.3.7 Manufacturer imposed tests. Any manufacturer imposed test(s) (e.g., gross and fine leak) which exceed
the minimum class level B requirements herein shall be documented on the manufacturer’s process baseline. If any
manufacturer imposed test(s) detects a problem, the manufacturer shall submit all devices in the lot to those tests to
eliminate rejects and shall take steps to determine and eliminate the cause of failure (e.g., rough handling which has
produced gross leaks).
A.4.4 Qualification procedures.
A.4.4.1 General. The manufacturer shall perform sufficient qualification inspection to assure that the devices
supplied to this appendix meet the minimum class level B or S performance requirements as defined herein.
Qualification to a given quality assurance level qualifies the product for all lower quality assurance levels provided the
product for all levels is manufactured on the same line and meets all the requirements of the lower level.
A.4.4.2 Qualification. A manufacturer shall qualify individual devices by subjecting them to, or assuring that, they
satisfy all the groups A, B, C, and D (and E if applicable) requirements as specified herein or TM 5005 or TM 5010,
as applicable of MIL-STD-883 for the specified device class and type of microcircuits. A.4.4.2.1 through A.4.4.2.7
herein should be used as guidelines.
A.4.4.2.1 Inspection routine. Except where the use of electrical rejects is allowed, all microcircuits subjected to
groups B, C, and D (and E if applicable) tests shall have previously been subjected to and passed all tests of group A
inspection specified as end-point electrical parameters. The microcircuits should then be divided into the subgroups
for groups B, C, and D (and E if applicable) inspection. When necessary to meet subsequent sample requirements,
all failures found in the course of group A inspection shall be replaced by microcircuits which have passed group A
tests prior to subjection to group B, C, or D (and E if applicable) tests. All tests shall be applied to and all acceptance
criteria referenced to the entire lot or sublot as applicable, not to an arbitrary quantity of devices tested.
A.4.4.2.1.1 Sample. The number of microcircuits to be tested shall be chosen (independent of lot size) by the
manufacturer and should be adequate to demonstrate conformance to the inspection criteria for each subgroup of
groups A, B, C, and D (and E if applicable) inspection. All qualification test samples for subgroups which require
variables data should be serialized prior to qualification tests.
A.4.4.2.2 Group A electrical testing. The parameters, conditions of test, and limits for group A testing shall be as
specified in Table III herein or test method 5005 of MIL-STD-883 and the applicable device specification or drawing.
Group A testing may be performed in any order. If an inspection lot is made up of a collection of splits or class level
S inspection sublot, each split or class level S inspection sublot should pass group A inspection as specified.
A.4.4.2.3 Group B testing. Group B tests should be as specified in Table II herein or TM 5005 of MIL-STD-883.
A.4.4.2.4 Groups C and D testing. Groups C and D tests shall be as specified in Table IV and Table V herein or
TM 5005 of MIL-STD-883.
A.4.4.2.5 Group E testing. Group E tests shall be conducted as specified in Table C-I herein or TM 5005 of
MIL-STD-883. Group E is required for initial qualification and after process or design changes that may affect
radiation hardness (see A.3.4.2). Qualification for RHA shall be for a specific microcircuit die and package type,
except as authorized by the qualifying activity. Microcircuits which pass the quality assurance and RHA requirements
to a higher reliability or RHA level shall be acceptable to a lower level or as non-RHA parts if all other applicable
requirements and pre- and post irradiation electrical parametric and timing limits are met.
79
MIL-PRF-38535K
APPENDIX A
A.4.4.2.6 Approval of other lead finishes. After qualification of one package type with a single lead finish, other
lead finishes may be approved by submitting a single device type for each additional lead finish in the previously
approved package family to group B, subgroup 3 and group D, subgroups 1, 3, 5, and 7 tests. Subgroup D-7 testing
should not be required for hot solder dip over lead finishes B or C (tin-lead, gold plate) which have been qualified on
the same package family.
A.4.4.2.7 Approval of other lead material. After the first lead material is qualified with a particular package family,
the new lead material for the package family can be considered qualified provided the required lead finish tests
specified (see A.4.4.2.6) with the addition of subgroup D-2, are successfully performed. Subgroup D-6 should be
completed when the lead frame extends into the die cavity.
A.4.4.2.8 Electrostatic discharge (ESD) sensitivity. ESD classification testing shall be done in accordance with
TM 3015 of MIL-STD-883 (The testing procedure defined within JESD22-A114 may be used as an alternate with
acceptable correlation data.), and the applicable device specification or drawing (see A.3.6.9.2). Devices shall be
handled in accordance with the manufacturer's in-house control documentation, which shall be maintained by the
manufacturer. Guidance for device handling is available in JESD625.
A.4.5 Quality conformance inspection (QCI).
A.4.5.1 General. Quality conformance inspection shall be conducted in accordance with the applicable
requirements of groups A, B, C, and D (and E if applicable) as specified herein or TM 5005 (or TM 5010 when
applicable) of MIL-STD-883, for the specified device class and TM 5007 of MIL-STD-883, when applicable.
Inspection lot sampling shall be in accordance with appendix D of this specification. Test results shall be recorded by
inspection lot identification code (see A.3.6.3) for each inspection lot.
A.4.5.2 Group A inspection. Group A inspection shall be performed on each inspection lot in accordance with
MIL-STD-883 and shall consist of electrical parameter tests specified for the specified device class. If an inspection
lot is made up of a collection of class level B splits or class level S inspection sublots, it shall be recombined into an
inspection lot before the group A inspection sample is taken or a group A inspection sample shall be taken from each
split or class level S inspection sublot.
A.4.5.3 Group B inspection. Group B inspection shall be performed in accordance with MIL-STD-883 on each
inspection lot for each package type and lead finish. As an alternate, except for class level S (at the manufacturer's
option) group B inspection may be performed on each package type and lead finish in accordance with 3.5.2 of TM
5005 or 3.4.2.1 of TM 5010 of MIL-STD-883. For class level S, group B, subgroups 1A, 2, 3, and 4 inspections shall
be performed on each sublot (split) when the manufacturer elects to keep the sublots (splits) separate from each
other after screen tests are completed. Except as otherwise specified in TM 5005 of MIL-STD-883, samples for this
inspection shall be completed and fully marked devices from lots which have been subjected to and passed the post
burn-in +25°C final electrical static tests (subgroup 1). Class level S steady-state life test, subgroup B-5, results shall
not be used to support class level B shipments.
A.4.5.4 Group C inspection for class level B only. Group C inspection (die-related tests) shall be in accordance
with MIL-STD-883 and shall include those tests specified which are performed periodically. Group C shall have been
completed on product with a die fabrication date code within four calendar quarters prior to the die fabrication date
code of product being submitted for acceptance. Group C tests are required for devices from each microcircuit group
(see A.3.1.3.13) in which a manufacturer is supplying product. Group C tests for each microcircuit group shall be
performed on one inspection lot of the most complex device type available at the time of selection from production
devices produced on each certified die fabrication line once per calendar year.
80
MIL-PRF-38535K
APPENDIX A
A.4.5.4.1 Group C sample selection. Samples selected for group C inspection shall meet all of the following
requirements:
a. Shall be chosen at random from any inspection lot comprised only of die from the quarter of the year (see
A.3.6.3.1) for which quality conformance inspection is being established in a particular microcircuit group
(see A.3.1.3.13 and tables A-VI, A-VII, A-VIII, and A-IX) for each certified die fabrication line.
b. Shall be chosen from an inspection lot that has been submitted to and passed group A quality conformance
inspection (QCI) (regardless of whether that inspection lot has been submitted and passed group B QCI).
c. The inspection lot from which the samples are selected shall be the one with the most complex device type
available at the time of selection.
d. On multichip microcircuits, the group C die fabrication date code requirement shall be determined by
considering only the latest date code of the most complex die contained within the package.
A.4.5.4.1.1 Microcircuit group assignments. Microcircuits group assignments and technologies/die family
assignments shall be as specified in tables A-VI, A-VII, A-VIII, A-IX, and A.3.1.3.13. Microcircuit groups shall be
structured such that they appropriately group all of the devices produced by the manufacturer, including those that do
not coincide with any of the current microcircuit groups listed. In the tables, each number represents a different
microcircuit group. Each letter in the top row of the table represents a different technology group. Each table entry in
the line below the technologies (e.g., Standard TTL, Schottky TTL, CMOS, etc.) represent a separate die family
(e.g., 93, 93H, LS, etc).
A.4.5.4.1.2 Product acceptable for delivery. Product shall be acceptable for delivery only after the successful
completion of all group C testing and shall be comprised of die meeting the following requirements:
a. Manufactured on the same die fabrication line as the sample selected for A.4.5.4.1.
b. In the same microcircuit grouping as the sample selected in A.4.5.4.1.
c. Which was started (or completed, at the manufacturer's pre-designated option) within the same
year the sample selected in A.4.5.4.1.
d. Group C coverage is required for each year of material production on each microcircuit group.
NOTE: The above group C inspection and corresponding marking system shall be implemented on all devices with
an inspection lot date code (seal week) of 8840 and later for JAN product and 8939 and later for non-JAN product.
Inspection lots formed using die fabricated prior to 1988 for JAN product and prior to 1989 for non-JAN product
shall be grandfathered according to the previous group C QCI requirements and marked with "GF" for the die fab
symbolization (see A.3.6.3.1).
A.4.5.5 Group D inspection. Group D inspection (package related tests) shall be in accordance with table V as
specified herein or test method 5005 of MIL-STD-883 and shall include those package or case related tests which are
performed periodically. Group D tests shall be performed every 26 calendar weeks on each package family for each
assembly line (traceable to the inspection lot identification code of the week tested). If no production is performed for
an extended period of time, coverage can be reestablished on the next available production run for the package
family in need of coverage. Group D results can be used to support any class provided all of the group D sampling
criteria are met. Each additional lead finish for each package family shall be subjected to subgroups 3, 5, and 7 of
group D. Subgroup D-7 testing is not required for hot solder dip over lead finishes B or C (tin-lead, gold plate) which
have been periodically tested for quality conformance inspection on the same package family. For hot solder dipped
leadless chip carriers, the B3 and L3 dimensions may be measured prior to solder dip. In addition, laser marked
devices for each package family, which do not have group D coverage for laser marking, shall be subjected to
subgroups 3 and 5 of group D.
81
MIL-PRF-38535K
APPENDIX A
TABLE A-VI. Digital microcircuits.
B
Technology group
A
C
L
M
Technologies Standard Schottky Low power DTL ECL CMOS
PMOS NMOS
Integrated
Combination
Bipolar and
CMOS
TTL
TTL
TTL
93,93H,
54,54H F,ALS
S,LS,
93L,
54L
54HC54
A,4xxx
54BCT,
54ABT
Injection
logic
Die family
Functions
29
Gates
1
2
3
8
9
15
16
17
22
23
24
36
37
38
NA
NA
NA
NA
NA
NA
125
126
127
NA
NA
NA
Buffers
Flip-Flops
30
31
10
Combinational
gates
4
5
11
12
18
19
25
26
32
33
39
40
NA
45
NA
48
128
129
NA
97
Sequential
registers/
counters
RAM
6
7
13
14
20
21
27
28
34
35
41
42
43
44
46
47
130
131
98
99
ROM/PROM/PLA
Microprocessors
interface
100
101
102
103
104
105
106
107
132
108
peripherals FIFO
NA - None assigned; to be assigned at a later date as necessary.
82
MIL-PRF-38535K
APPENDIX A
TABLE A-VII. Linear microcircuits. 1/
Technology group
Technologies
D
E
F
G
Bipolar
J-FET
Functions
61
CMOS
Combinational
Operational amplifiers
49
73
85
Comparators
Sense amplifiers
Regulators
50
51
52
62
63
64
74
75
76
86
87
88
Line drivers/receivers
53
65
77
89
Timers
54
55
56
57
58
66
67
68
69
70
78
79
80
81
82
90
91
92
93
94
Core drivers
D/A converters
A/D converters
Analog switches/multiplexers
Voltage reference
Sample and hold
Active filters
59
60
71
72
83
84
95
96
109
110
111
112
113
114
115
116
117
118
119
120
Telecommunications
Electro-optics
1/ Die families are defined as microcircuit groups shown.
TABLE A-VIII. Other microcircuits.
Technology group
H
Function
Multichip
TABLE A-IX. Application specific microcircuits. 1/
Technology group
Technologies
K
Bipolar
Function
CMOS
Gate array
121
122
123
124
Linear array
1/ Die families are defined as microcircuit groups shown.
83
MIL-PRF-38535K
APPENDIX A
A.4.5.5.1 Group D sample selection. Sample selection for group D shall be as follows:
a. The package types selected for group D inspection shall be either rotated among the package types
available at the time of sample selection from the allotted package family or worst case available from the
allotted package family. Worst case shall be determined by the manufacturer based on an incoming vendor
material control program (see A.4.5.5.2). For glass-sealed packages (e.g., cerdips, cerpacks), worst case is
based on the minimum seal area and the maximum cavity size (in most cases this shall be two packages).
Under the rotation option, if a package type has not been tested for 3 years, then the next assembled lot of
that package type shall receive group D inspection. If the manufacturer has a single package, which cannot
be grouped into a package family, the manufacturer has the option to perform the group D testing once per
calendar year on that package.
b. The product accepted for delivery shall be the inspection lot identification codes of the 36 successive weeks,
except as allowed in A.4.5.5.1a, beginning with the inspection lot identification code of the successful group
D sample for the package family.
c. Different device types may be used for different subgroups. Testing of a subgroup using a single device
type enclosed in the intended package type shall be considered as complying with the requirements for that
subgroup for all the device specifications or drawings utilizing the qualified package family and lead finish.
d. Technical justification shall be given for device selections for subgroups D-3 and D-4 in regards to device
technology electrical performance and package interaction. If a package and technology interaction is
present, subgroup D-3 and D-4 shall be performed on the affected combination separately or used as
coverage for the whole package family. Rotation of device technology is allowed to address this
requirement. For nonconformance see A.4.5.8.
A.4.5.5.2 Incoming vendor material control program. The manufacturer who utilizes the worst case group D option
shall have in place an incoming vendor material control program for the piece parts used in packaging (e.g., vendor
SPC program). The methods and procedures used to control inspection, storage, and handling of incoming materials
shall be documented.
A.4.5.6 Group E inspection. Group E inspection shall be in accordance with table C-I as specified herein or test
method 5005 of MIL-STD-883 and, at the contractor’s option, is allowed anytime following completion of wafer
fabrication. A device type which fails group E inspection may not be certified as an RHA microcircuit at the failed or
higher level, but may be used as a non-RHA microcircuit or certified at another (lower) level if the microcircuit meets
the lower level requirements and all other applicable requirements including pre- and post-irradiation electrical and
timing parametric limits.
A.4.5.6.1 Group E sample selection. Sample selection shall be in accordance with table C-I as specified herein or
test method 5005 of MIL-STD-883 and shall be from each wafer prior to assembly or from each inspection or wafer
lot. QCI requirements for class level B wafer lots shall be satisfied if all wafers used in that lot have been tested
individually in accordance with class level S requirements. For traceability, see A.3.4.6.
A.4.5.7 End-point tests for groups B, C, and D (and E if applicable) inspections. End-point measurements and
other specified post-test measurements shall be made for each microcircuit of the sample after completion of all other
specified tests in the subgroup. The test limits for the end-point measurements shall be the same as the test limits for
the respective group A subgroup inspections. Different end-points may be specified for group E tests in the device
specification or drawing. Any additional end-point electrical measurements that may be performed at the discretion of
the manufacturer, shall be accomplished in accordance with A.3.4.3 (e.g., tests performed on sample devices
subjected to groups B, C, and D (and E if applicable) tests shall be performed as a 100-percent screen on all
production devices represented by the sample) and shall be documented on the test travelers.
84
MIL-PRF-38535K
APPENDIX A
A.4.5.8 Nonconformance. Lots that fail subgroup requirements of groups B, C, and D (and E if applicable) may be
resubmitted in accordance with the provisions of A.4.3.3.1. A failed lot that is reworked (see A.3.7.1) or is rescreened
(resubmittal to inadvertently missed process steps is not considered a rescreen) may not be resubmitted to the failed
subgroups (and shall be counted as a failure) for periodic group B, C, or D (or E if applicable) quality conformance
inspection (QCI) coverage. The lot may be resubmitted only to the failed subgroup to determine its own acceptance.
If a lot is not resubmitted or fails the resubmission, the lot shall not be shipped, and all references to MIL-PRF-38535,
or this appendix, shall be removed. For RHA microcircuits where group E tests are performed, and a sample plan of
18(1) and 38(1) is utilized for two successive lots of the same device type or for more than 10 percent of the lots
during the preceding 18 months, data as specified herein shall be provided. Resubmission for RHA qualification
inspection, in this case, may be required. Lots that are not resubmitted, fail the resubmission, are withdrawn from
compliance consideration, reworked, or rescreened (excluding resubmittal to final electricals when test conditions or
limits are not changed) due to the failure of a PDA or QCI requirement of this appendix shall be recorded and
properly dispositioned. The reporting of these lots shall include the following, as applicable:
a. PIN.
b. Inspection lot identification code.
c. Quantity of lot.
d. Point of scrap in manufacturer's flow.
e. Test results and date of failure (including all rescreening, reworks, and resubmissions).
f. Reason for failure or scrapping including applicable test results.
g. Date of scrapping or withdrawal from military consideration.
h. Disposition action of affected lots.
NOTE: The Government reserves the right to request and receive information concerning implementation of
corrective actions and justification for rework and rescreening.
A.4.5.8.1 Group B failure. When a lot failure occurs for a group B subgroup, then all other sublots within the
inspection lots shall be submitted to the failed subgroup.
A.4.5.8.2 Alternate group B failure. When a failure has occurred in group B using the alternate group B procedure,
samples from three additional inspection lots of the same package type, lead finish and week of seal as the failed
package shall be tested to the failed subgroups. If all three inspection lots pass, then all devices manufactured on
the same assembly line using the same package type and lead finish and sealed in the same week may be accepted
for group B inspection. If one or more of the three additional inspection lots fails, then no inspection lot containing
devices manufactured on the same assembly line using the same package type and lead finish sealed in the same
week shall be accepted for group B inspection until each inspection lot has been subjected to and passed the failed
subgroups.
85
MIL-PRF-38535K
APPENDIX A
A.4.5.8.3 Group C failure. When a group C failure occurs, samples from subsequent wafer lots submitted for
acceptance in the same microcircuit group (see A.3.1.3.13), produced on the same die fabrication line, and started
(or completed at the manufacturer's option) die fabrication during the same year shall be subjected to group C. The
testing shall be performed on a wafer-lot-by-wafer-lot basis until three consecutively tested wafer lots from the same
microcircuit group and year of fabrication pass group C; the testing may then return to periodic testing. A device type
that fails a group C inspection shall not be accepted until the device type that failed successfully completes group C.
In addition, any other inspection lots using die from the same failed wafer lot shall successfully complete group C
prior to shipment until three successive inspection lots from the same wafer lot have passed group C using a
tightened sample size number (accept number) with C = 0. In the event of a group C failure, the manufacturer shall
evaluate the possible impact on product that has been manufactured since the last acceptable group C test (based
on wafer fab code), from the failed microcircuit group.
A.4.5.8.4 Group D failure. When a failure occurs for a group D subgroup(s), samples from subsequent lots
submitted for acceptance of the same package family and lead finish shall be subjected to all the tests in the failed
subgroup(s). The testing shall be performed on a lot-by-lot basis until three successive lots of the same package
family pass the failed subgroup(s). Testing of the package family may then return to periodic testing. The package
type that failed the group D subgroup(s) shall be tested on a lot-by-lot basis until three successive lots pass the failed
subgroup(s) at which time it may return to periodic inspection coverage. Under the worst case conditions option,
when a glass sealed package fails, every package type in the package family shall pass the failed group D subgroup,
prior to shipping the device. Failed package types shall be tested on a lot-by-lot basis until three successive lots of
the same package type pass the failed subgroup(s) at which time it may return to periodic inspection. In the event of
a group D failure, the manufacturer shall evaluate the possible impact on product that has been manufactured since
the last acceptable group D (based on seal or encapsulation date code), for the failed package family.
A.4.6 Screening. Each microcircuit shall have been subjected to and passed all the screening tests detailed in
table IA as specified herein or TM 5004 or TM 5010, as applicable, of MIL-STD-883 for the specified quality
assurance level and type of microcircuit in order to be acceptable for delivery. When a PDA (see A.3.1.3.14 and TM
5004 or TM 5010 of MIL-STD-883) or delta limits (see A.3.1.3.15) has been specified or other conditions for lot
acceptance have been imposed, the required data shall be recorded and maintained as a basis for lot acceptance.
Devices that fail any test criteria in the screening sequence shall be removed from the lot at the time of observation or
immediately at the conclusion of the test in which the failure was observed. Once rejected and verified as a device
failure, no device may be retested for acceptance.
A.4.6.1 Burn-in. Burn-in shall be performed on all microcircuits where specified and the specified pre- and post-
burn-in electrical parameters shall be measured.
A.4.6.1.1 Lots and sublots resubmitted for burn-in. Inspection lots, lot splits, and class level S sublots may be
resubmitted for burn-in one time only and may be resubmitted only when the observed percent defective does not
exceed twice the specified PDA (10 percent) or 2 devices, whichever is greater. Any lot that exceeds the allowable
resubmission PDA, (greater than 10%, but less than 20%), the manufacturer may resubmit the lot provided analysis
is performed to a level sufficient to determine the mechanism of failure for the lot with TRB approval and written
notification (letter or email) to the Qualifying Activity prior to shipment. The lot may be resubmitted using tightened
inspection criteria. Resubmitted inspection lots, lot-splits, and class level S sublots shall contain only parts which
were in the original lot or sublot. Resubmitted inspection lots, lot splits, and class level S sublots shall be kept
separate from new lots and sublots and shall be inspected for all specified characteristics using a tightened
inspection PDA equal to the next lower number in the sample size series (see appendix D), or one device, whichever
is greater.
86
MIL-PRF-38535K
APPENDIX A
A.4.6.1.2 Burn-in acceptance criteria. The PDA for each inspection lot or class level S sublot submitted to burn-in
and interim (post burn-in) electrical parameters (see test method 5004 of MIL-STD-883) shall be 5 percent (or one
device, whichever is greater) on all failures. In addition, for class level S, the PDA shall be 3 percent (or one device,
whichever is greater) on functional failures. A manufacturer may elect to divide inspection lots into splits for burn-in
and interim electrical parameter measurement and calculate a PDA for each split, or the manufacturer may elect to
add all failures from the constituent splits together to calculate a PDA for the original inspection lot. If a PDA is
calculated for each split, it shall be used as accept/reject criteria for that split only and shall not be combined with the
PDA from any other lot or split for any reason related to lot or split acceptance. If a PDA is calculated for an
inspection lot by adding the failures found in the various constituent splits, this PDA shall be used as accept/reject
criteria for the entire lot and shall, in no way, be used as accept/reject criteria for any grouping of devices other than
the entire lot. Delta limits shall be defined in the device specification or drawing. When the PDA applies to delta
limits, the delta parameter values measured after burn-in (100 percent screening test) shall be compared with the
delta parameter values measured prior to that burn-in. Lots may only be resubmitted when the observed percent
defective does not exceed twice the specified PDA (10 percent) or 2 devices, whichever is greater. Any lot that
exceeds the allowable resubmission PDA, (greater than 10%, but less than 20%), the manufacturer may resubmit the
lot provided analysis is performed to a level sufficient to determine the mechanism of failure for the lot with TRB
approval and written notification (letter or email) to the Qualifying Activity prior to shipment. The lot may be
resubmitted using tightened inspection criteria. The delta criteria applying to such resubmissions shall be in
accordance with the following procedure:
a. Devices having delta drift values in excess of the device specification or drawing limits shall be rejected.
b. The remaining devices shall then be submitted to the balance of inspections and tests as specified herein.
A.4.6.1.2.1 Failure analysis of burn-in screen failures for class level S devices. Catastrophic failures (e.g., shorts
or opens measurable or detectable at +25°C) subsequent to burn-in shall be analyzed. Analysis of catastrophic
failures may be limited to a quantity and degree sufficient to establish failure mode and cause and the results shall be
documented and made available to the Government representative.
A.4.6.2 External visual screen. The final external visual screen shall be conducted in accordance with TM 2009 of
MIL-STD-883 after all other 100 percent screens have been performed to determine that no damage to, or
contamination of, the package exterior has occurred.
A.4.6.3 Particle impact noise detection (PIND) test for class level S devices. The inspection lot (or sublots) shall
be submitted to 100 percent PIND testing a maximum of five times in accordance with test method 2020 of
MIL-STD-883, condition A. PIND prescreening shall not be performed. The lot may be accepted on any of the five
runs if the percentage of defective devices is less than 1 percent (zero failures allowed for lots of less than 100
devices). All defective devices shall be removed after each run. Lots that do not meet the 1 percent PDA on the fifth
run, or exceed 25 percent defectives cumulative, shall be rejected and resubmission is not allowed.
A.4.6.4 Lead forming. When lead forming (bending) is specified for any device class, a sample fine and gross seal
test shall be performed in accordance with table IA as specified herein or test method 5004 of MIL-STD-883 after the
lead forming operations and prior to final visual inspection of these devices, and devices which fail any test shall be
removed from the lot.
A.4.6.5 Nondestructive bond pull test for class level S devices. Nondestructive 100 percent bond pull test shall be
performed for class level S devices. The total number of failed wires and the total number of devices failed shall be
recorded. The lot shall have a PDA of 2 percent or less based on the number of wires pulled in specified lot. The
test shall be performed in accordance with test method 2023 of MIL-STD-883. Devices from lots that have been
subjected to the nondestructive 100 percent bond pull test and have failed the specified class level S, PDA
requirement shall not be delivered as class level B product.
87
MIL-PRF-38535K
APPENDIX A
A.4.7 Test results. The results of all qualification and quality conformance tests and inspections and the results of
all required failure analysis shall be recorded and maintained in the manufacturer's facility in accordance with A.4.8.
The Quality Assurance Program Plan, qualification test reports, summary of QCI data, and any other data reports
required by the applicable acquisition document shall be maintained by the manufacturer (or submitted to the
acquiring activity when specified in the purchase agreement). The disposition of all lots or samples submitted for
wafer lot acceptance, screening (when PDA is specified), quality conformance inspection or qualification shall be fully
documented and lots which fail any specified requirement shall be recorded as failed lots whether resubmitted or
withdrawn. Disposition of resubmitted lots shall likewise be recorded so that a complete history is available for every
lot tested from initial submission to final disposition including all failures, resubmissions, and withdrawals.
A.4.7.1 Screening test data for class level S microcircuits. When specified in the acquisition document, a copy of
the attributes test data, a copy of the variables data, and the delta calculations resulting from the applicable delta
parameter tests before and after each burn-in, and a copy of the X-rays required by the device specification or
drawing shall accompany each lot of class level S microcircuits shipped. The manufacturer shall maintain one
complete copy of all screening data for 5 years after delivery of the parts. This data shall be legible and shall be
correlatable to the applicable PIN, the lot date code, and the individual serial number. The data shall be verified by
the manufacturer's quality assurance organization and shall bear evidence of such verification.
A.4.8 Quality assurance program.
A.4.8.1 Manufacturer certification. The manufacturer shall establish, implement, and maintain a quality assurance
program in accordance with A.4.8 through A.4.9.3.8 (summarized in table A-X) in order to be a manufacturer of class
level B microcircuits. The manufacturer's quality assurance program shall demonstrate and assure that design,
manufacture, inspection and testing of microcircuits are adequate to assure compliance with the applicable
requirements and quality standards of this specification. Where the manufacture or any portion of the manufacturing
and testing operation is other than the manufacturer's facility, it shall be the responsibility of the manufacturer to
secure and prove the documentation and control of the quality assurance program as described herein. The program
shall be documented as follows:
a. Design, processing, manufacturing, and testing instructions (A.4.8.1.1).
b. Records to be maintained (A.4.8.1.2).
c. Quality assurance program plan (A.4.8.1.3).
All required documentation shall be available at, and continually effective in, the manufacturer's plant while it is
producing microcircuits which are intended to be offered for qualification and quality conformance inspections under
this specification. All required program documentation and records shall be available for review by acquiring activity
upon request. The acquiring activity shall have access to nonproprietary areas of the manufacturer's plant for the
purpose of verifying its implementation, and the Government shall have access to all areas of the manufacturer's
plant for the purpose of verifying its implementation.
Personnel performing quality functions shall have sufficient well defined responsibility, authority, and the
organizational freedom to identify and evaluate quality problems and to initiate, recommend, and provide solutions.
88
MIL-PRF-38535K
APPENDIX A
A.4.8.1.1 Design, processing, manufacturing, and testing instructions. The manufacturer shall have in effect
documented instructions covering, as a minimum, these areas:
a. Conversion of customer requirements into manufacturer's internal instructions (see A.4.8.1.1.1).
b. Personnel training and testing (see A.4.8.1.1.2).
c. Inspection of incoming materials, utilities, and work in-process (see A.4.8.1.1.3).
d. Quality-control operations (see A.4.8.1.1.4).
e. Quality-assurance operations (see A.4.8.1.1.5).
f. Design, processing, manufacturing equipment, and materials instructions (see A.4.8.1.1.6).
g. Cleanliness and atmosphere control in work areas (see A.4.8.1.1.7).
h. Design, material, and process change control (see A.4.8.1.1.8).
i. Tool, gauge, and test equipment maintenance and calibration (see A.4.8.1.1.9).
j. Failure and defect analysis and feedback (see A.4.8.1.1.10).
k. Corrective action and evaluation (see A.4.8.1.1.11).
l. Incoming, in-process, and outgoing inventory control (see A.4.8.1.1.12).
m. Schematics (see A.4.8.1.1.13).
n. ESD handling control program (see A.4.8.1.1.14).
Detailed requirements for coverage of these items are stated in A.4.8.1.1.1 through A.4.8.1.1.14. These
requirements shall normally be expected to be met by the manufacturer's standard drawings, specifications, process
instructions, and other established manufacturing practices. If particular requirements are not covered by the
manufacturer's established practices, suitable documentation shall be added to satisfy those requirements.
A.4.8.1.1.1 Conversion of customer requirements into manufacturer's internal instructions. The procedure by
which customer requirements, as expressed in specifications, orders, etc., are converted into working instructions for
the manufacturer's personnel shall be documented.
A.4.8.1.1.2 Personnel training and testing. The motivational and work training and testing practices employed to
establish, evaluate, and maintain the skills of personnel engaged in reliability-critical work shall be documented as to
form, content, and frequency of use.
A.4.8.1.1.3 Inspection of incoming materials and utilities, and of work in-process. Inspection operations shall be
documented as to type of inspection, sampling and test procedures, acceptance rejection criteria, and frequency of
use.
A.4.8.1.1.4 Quality control operations. Quality control operations shall be documented as to type, procedures,
rating criteria, action criteria, records, and frequency of use.
A.4.8.1.1.5 Quality assurance operations. Quality assurance operations shall be documented as to type,
procedures, equipment, judgment and action criteria, records, and frequency of use.
89
MIL-PRF-38535K
APPENDIX A
TABLE A-X. Quality assurance program requirements..
In-house documentation covering
these areas (see A.4.8.1.1)
In-house records covering
these areas (see A.4.8.1.2)
A program plan covering these
areas (see A.4.8.1.3)
Self-audit plan covering
these areas (see A.4.9)
a. Conversion of customer
requirements into manufacturer's
internal instructions (see
A.4.8.1.1.1)
a. Personnel training and
testing (see A.4.8.1.2.1)
a. Functional block
organization chart (see
A.4.8.1.3.1)
a. Self-audit program
(see A.4.9.3.1)
b. Inspection operations
(see A.4.8.1.2.2)
b. Self-audit
representatives (see
A.4.9.3.2)
b. Examples of manufacturing
flowchart (see A.4.8.1.3.2)
b. Personnel training and testing
(see A.4.8.1.1.2)
c. Failure and defect
reports analysis (see
A.4.8.1.2.3)
c. Proprietary documents
identification (see A.4.8.1.3.3)
c. Audit deficiencies
(see A.4.9.3.3)
c. Inspection of incoming
materials and utilities and of work
in-process (see A.4.8.1.1.3)
d. Initial documentation and d. Examples of design,
d. Audit follow-up (see
A.4.9.3.4)
subsequent changes in
design, materials, or
material, equipment, visual
standard, and process
d. Quality control operations (see
A.4.8.1.1.4)
processing (see A.4.8.1.2.4) instructions (see A.4.8.1.3.4)
e. Audit schedules and
intervals (see
e. Quality assurance operations
(see A.4.8.1.1.5)
e. Equipment calibrations
(see A.4.8.1.2.5)
e. Examples of records (see
A.4.8.1.3.5)
A.4.9.3.5)
f. Self-audit report (see
A.4.9.3.6)
f. Design, processing,
manufacturing equipment, and
materials instructions (see
A.4.8.1.1.6)
f. Process utility and
material controls (see
A.4.8.1.2.6)
f. Examples of design,
material, and process change
control documents (see
A.4.8.1.1.8 and as required in
A.3.4.2)
g. Self-audit areas
(see A.4.9.3.7)
g. Product lot identification
(see A.4.8.1.2.7)
g. Cleanliness and atmosphere
control in work areas (see
A.4.8.1.1.7)
h. Self-audit checklist
(see A.4.9.3.8)
g. Examples of failure and
defect analysis and feedback
documents (see A.4.8.1.1.10)
h. Product traceability (see
A.4.8.1.2.8)
h. Design, material, and process
change control (see A.4.8.1.1.8)
i. Self-audit report (see
A.4.9.3.6)
h. Examples of corrective
actions and evaluations
i. Tool, gauge, and test equipment
maintenance, and calibration (see
A.4.8.1.1.9)
documents (see A.4.8.1.1.11)
i. Manufacturer's internal
instructions for internal visual
inspection (see A.4.8.1.3.6)
j. Failure and defect analysis and
feedback (see A.4.8.1.1.10)
j. Examples of test travelers
(see A.4.8.1.3.7)
k. Corrective action and
evaluation (see A.4.8.1.1.11)
k. Examples of design and
construction baselines (see
A.4.8.1.3.8)
l. Incoming, in-process, and
outgoing inventory control (see
A.4.8.1.1.12)
l. Manufacturer's self-audit
(see A.4.9.1)
m. Schematics (see A.4.8.1.1.13)
n. ESD handling control program
(see A.4.8.1.1.14)
90
MIL-PRF-38535K
APPENDIX A
A.4.8.1.1.6 Design, processing, manufacturing equipment, and materials instructions. Device design, processing,
manufacturing equipment and materials shall be documented in drawings, standards, specifications, or other
appropriate media which shall cover the requirements and tolerances for all aspects of design and manufacture
including equipment test and prove-in, materials acquisition and handling, design-verification testing and processing
steps. As a minimum requirement, detailed documentation shall exist for the following items and shall be adequate to
assure that quantitative controls are exercised, that tolerances or limits of control (limits shall be established for
baselined and other critical wafer fabrication process monitors used for acceptance of class levels B and S product)
are sufficiently tight to assure a reproducible high quality product and that process and inspection records reflect the
results actually achieved:
a. Incoming materials control (wafers, substrates, packages, active and passive chips or elements for hybrid or
multichip microcircuits, wire, water purification, etc.).
b. Masking, photoresist, and mask registration.
c. Epitaxy and diffusion.
d. Oxidation and passivation.
e. Metallization and film deposition.
f. Die, element, and substrate attachment.
g. Bonding.
h. Rework.
i. Sealing.
A.4.8.1.1.7 Cleanliness and atmosphere control in work areas. The requirements for cleanliness and atmosphere
control in each work area in which unsealed devices, or parts thereof, are processed or assembled shall be
documented. During manufacture, transit, and storage, prior to seal, microcircuit die/wafers shall be protected from
human contamination, machine overspray, or other sources of contamination which may occur due to human error or
machine design which does not totally eliminate the possibility of overspray or other forms of contamination. Airborne
particulate class limits shall be as defined by ISO 14644-1. A method for class verification and reverification shall be
documented and implemented. ISO 14644-2 may be used as a guideline. The manufacturer shall establish action
and absolute control limits (at which point work stops until corrective action is completed) based on historical data
and criticality of the process in each particular area. For foreign material identification and control, see internal visual
inspection requirements test method TM 2010 of MIL-STD-883.
A.4.8.1.1.8 Design, material, and process change control. The methods and procedures for implementation and
control of changes in device design, material and processing, and for making change information available to the
acquiring activity, when applicable, shall be documented.
A.4.8.1.1.9 Tool, gauge, and test equipment maintenance and calibration. The maintenance and calibration
procedures, and the frequency of scheduled actions, for tools, gauges, manufacturing and test equipment shall be
documented and in accordance with in-house requirements. ANSI/NCSL Z540.3 or equivalent should be used as a
guideline. Failure to perform scheduled maintenance, repair and recalibration requirements critical to a process (as
defined by the manufacturer) shall require corrective action.
91
MIL-PRF-38535K
APPENDIX A
A.4.8.1.1.10 Failure and defect analysis and feedback. The procedures for identification, handling, and analysis of
failed or defective devices and for dissemination of analysis data shall be documented, including the procedure for
informing the qualifying activity of analysis results, when applicable.
A.4.8.1.1.11 Corrective action and evaluation. The procedure and responsibility for decisions regarding the
necessity for corrective action as a result of failure or defect analysis, and for evaluation and approval of proposed
corrective actions, shall be documented. If the procedure for evaluation and approval of changes proposed for other
reasons, such as cost reduction or product improvement, differs from the above, it shall also be documented.
A.4.8.1.1.12 Incoming, in-process, and outgoing inventory control. The methods and procedures shall be
documented which are used to control storage and handling of incoming materials, work in-process, and warehoused
and outgoing product in order to (a) achieve such factors as age control of limited-life materials; and (b) prevent
inadvertent mixing of conforming and nonconforming materials, work, or finished product. Tests and inspections
performed by the manufacturers on acquired materials and supplies shall include verification of chemical, physical,
and functional characteristics required by manufacturer drawings and specifications. Procedures shall be prepared
and maintained for controlling the receipt of acquired materials and supplies. The procedures shall provide the
following:
a. Withholding received materials or supplies from use pending completion of the required inspection or tests, or
the receipt of necessary reports.
b. Segregation and identification of nonconforming materials and supplies from conforming materials and
supplies and removal of nonconforming subassemblies and parts.
c. Identification and control of limited-life materials and supplies.
d. Identification and control of raw materials.
e. Assurance that the required test reports, certification, etc., have been received.
f. Clear identification of materials released from receiving inspection and test to clearly indicate acceptance or
rejection status of material pending review action.
A.4.8.1.1.13 Schematics. Schematics pertaining to the testing of microcircuits shall be under document control.
This includes device schematics or burn-in schematics in accordance with the applicable device specification or
drawing.
A.4.8.1.1.14 ESD handling control program. The ESD handling control program documentation shall be under
document control. This includes methods, equipment and materials, training, packaging, handling, and procedures
for handling ESD sensitive devices.
A.4.8.1.2 Records to be maintained. The records required by this section shall be continuously maintained during
the manufacture of microcircuits that are intended to be submitted for quality conformance inspection under this
specification. The records pertaining to production processes, incoming and in-process inspections shall be retained
as detailed in A.4.8.1.2.b. Those pertaining to screening and quality conformance inspection shall be retained for a
minimum of 5 years after performance of the inspections. Records shall be maintained as a minimum for:
a. Personnel training and testing (see A.4.8.1.2.1) (1-year active file retention; 5-year total record retention).
b. Inspection operations (see A.4.8.1.2.2) (1-year record retention for production processes, incoming and
in-process; 5-year record retention for screening, qualification, and quality conformance inspection).
c. Failure and defect reports and analyses (see A.4.8.1.2.3) (5-year record retention).
92
MIL-PRF-38535K
APPENDIX A
d. Initial documentation and subsequent changes in design, materials, or processing (see A.4.8.1.2.4) (5-year
record retention).
e. Equipment calibrations (see A.4.8.1.2.5) (see ANSI/NCSL Z540.3 for records).
f. Process, utility, and material controls (see A.4.8.1.2.6) (1-year record retention).
g. Product lot identification (see A.4.8.1.2.7) (5-year record retention).
h. Product traceability (see A.4.8.1.2.8) (5-year record retention).
i. Self-audit report (see A.4.9.3.6) (4-year retention).
Note: Altered records shall not be considered acceptable data unless documented instructions are followed which
shall include:
j. For changed data:
(1) Identification of individual making new entry.
(2) Maintain identity of all original data entries (white out is not permitted).
(3) Justification and date noted for change and verification by a second party (QA shall verify screening,
qualification and quality conformance inspection records) when change affects lot jeopardy (e.g., lot
originally considered to be rejected is changed to pass status).
k. For transferred data to new test record:
(1) Identification of individual transferring data.
(2) All original record entries shall be transferred.
(3) New test record entries shall be verified against the original test record by a second party.
l. Computerized records are optional provided they clearly and objectively indicate that all the requirements, of
the specified device class, of this appendix have been met. The computerized records for traceability,
screening and quality control inspection shall be readily accessible and available to Government personnel for
review and an appropriate electronic/hard copy provided when required. The requirements below shall be
met.
(1) Entry verification:
(a) Each individual making shall be uniquely identified.
(b) All manually entered data shall be verified at the time of entry by the same operator.
(c) All accepted transactions (e.g., entered data) shall be identified by time/date or date/entry
sequence to protect against "out of sequence" entries. No recorded transactions shall be deleted
or changed.
93
MIL-PRF-38535K
APPENDIX A
(2) Control procedures for lot history records:
(a) Lot histories may be modified only by additions (e.g., original entries plus corrective addenda).
(b) All corrective addenda shall meet all the requirements of A.4.8.1.2 i.
(c) Only limited designated operators shall be able to access lot history computer records for corrective
addenda. Documented security procedures shall be followed to assure that limited access is
maintained (e.g., restricted terminals, passwords, etc.).
(d) A quality assurance representative shall verify screening, qualification, and quality conformance
inspection records when corrective addenda affect lot jeopardy.
(3) Control of computerized lot history records:
(a) All computer lot history records shall have an accurate tape or equivalent backup generated prior to
lot shipment. Within 3 months of lot shipment, the backup record shall be transferred to a secure
location to be archived.
(b) These archived tapes or equivalent media shall be kept for a minimum of 5 years.
A.4.8.1.2.1 Personnel training and testing. Records shall cover the nature of training or testing given, the date
thereof by week and length in hours, and the group(s) of personnel given work training and testing. Records are
required only for product-related training and testing as distinguished from safety, first aid, etc.
A.4.8.1.2.1.1 Training of operators and inspectors. All critical processes and production inspection shall be
performed by personnel who have been trained by the manufacturer to perform their assignment task in accordance
with manufacturer's in-house standards, including a formal training (e.g., classroom or on the job training supervised
by a certified trainer) and test procedure to assure the proficiency of each individual. Each individual shall be
retested or retrained at the end of a designated period or when personnel performance indicates poor proficiency.
Personnel shall not be used in critical processes or inspections until the required level of proficiency has been
demonstrated.
A.4.8.1.2.2 Inspection operations. Records of inspection operations shall cover the tests or inspections made, the
materials group (lot, batch, etc.) inspected, the controlling documentation, the date of completion of inspection, the
amount of material tested, and acceptance, rejection, or other final disposition of the material.
A.4.8.1.2.3 Failure and defect reports and analyses. Records of failed or defective devices shall cover the source
from which each device was received, the test or operation during which failure occurred or defects were observed,
and prior testing or screening history of the device, the date of receipt, and the disposition of the device. Records of
failure and defect analyses shall cover the nature of the reported failure or defect (failure or defect mode), verification
of the failure or defect, the nature of any device discrepancies which were found during analysis (failure or defect
mechanism), assignment of the failure-activating cause if possible, the date of completion of the analysis,
identification of the group performing the analysis, disposition of the device after analysis, and the distribution of the
record. The record shall also treat the relationship of observed failure or defect modes in related lots or devices and,
where applicable, corrective action taken as a result of the findings.
A.4.8.1.2.4 Initial documentation and subsequent changes in design, materials, or processing. Records shall
cover the initial documentation and all changes with the date upon which each change in design, materials, or
processing becomes effective for devices intended to be submitted for quality conformance inspection under this
specification, the documents authorizing and implementing the change, and identification of the first production and
quality conformance inspection lot(s) (as applicable) within which product incorporating the change is included shall
be maintained when the change requires notification of the qualifying activity (see A.3.4.2).
94
MIL-PRF-38535K
APPENDIX A
A.4.8.1.2.5 Equipment calibrations. Records shall cover the scheduled calibration intervals for each equipment
item, the dates of completion of actual calibration, identification of the group performing the calibration, and
certification of the compliance of the equipment with documented requirements after calibration, (use ANSI/NCSL
Z540.3 or equivalent, as a guideline).
A.4.8.1.2.6 Process, utility, and material controls. Records shall cover the implementation of devices such as
control charts (e.g., X bar R charts) or other means of indication of the degree of control achieved at the points in the
material, utility, and assembly process flow documented in the manufacturing instructions. Records shall also
indicate the action taken when each out-of-control condition is observed, and the disposition of product processed
during the period of out-of-control operation.
A.4.8.1.2.7 Product lot identification. Records shall be maintained to identify when each production or inspection
lot or both was processed through each area. Records shall be capable of identifying for each production and
acceptance inspection lot (as applicable) of finished product, these items as a minimum:
a.
b.
c.
d.
e.
f.
The acceptance inspection tests performed on the lot, and their results.
The serial numbers (when applicable) of all devices in the lot.
The date of completion of acceptance inspection of the lot.
Identification of the lot.
The pertinent device specification or drawing under which inspection was performed.
Final disposition of the lot (withdrawn, not accepted, accepted).
Acquiring activity source inspection consideration of the lot.
The number of devices, by device type, in each lot at the time of seal.
g.
h.
i.
Independently identify, by device type, the number of devices shipped and the number of devices in
stock inventory.
A.4.8.1.2.8 Product traceability. The traceability system shall be maintained such that the qualifying activity can
trace and determine that the microcircuits passed the applicable screening, qualification, and quality conformance
inspections; that the microcircuits were assembled on the proper certified assembly line, and processed on the
correct wafer process line.
A.4.8.1.3 Quality assurance program plan. The quality assurance program plan shall be established and
maintained by the manufacturer, and shall be reviewed by the qualifying activity (QA). It shall consist of a volume or
portfolio, or series of same, which shall serve to demonstrate that the manufacturer's understanding of a complete
quality assurance program, as exemplified by their documentation system, is adequate to assure compliance of their
product with the applicable specifications and quality standards. If the quality assurance program exemplified is
applied consistently to all product lines intended to be submitted for acceptance inspection under this specification,
only one program plan is required for each manufacturing plant; any difference in treatment of different product lines
within a plant shall be stated and explained in the program plan, or separate program plans prepared for such
different lines. The program plan shall contain, as a minimum, these items:
95
MIL-PRF-38535K
APPENDIX A
a.
Documents representing the manufacturer's quality organization:
(1) Functional block organization chart (see A.4.8.1.3.1).
(2) Example of manufacturing flowchart (see A.4.8.1.3.2).
(3) Proprietary-document identification (see A.4.8.1.3.3).
(4) Examples of design, material, equipment, visual standard, and process instructions (see
A.4.8.1.3.4).
(5) Examples of records (see A.4.8.1.3.5).
(6) Examples of design, material and process change control documents (see A.4.8.1.1.8).
(7) Examples of failure and defect analysis and feedback documents (see A.4.8.1.1.10).
(8) Examples of corrective action and evaluation documents (see A.4.8.1.1.11).
(9) Manufacturer's internal instructions for internal visual inspection (see A.4.8.1.3.6).
(10) Examples of test travelers (see A.4.8.1.3.7).
(11) Examples of design and construction baseline (see A.4.8.1.3.8).
(12) Manufacturer's self-audit program (see A.4.9).
NOTE: Where a manufacturer's lot/test traveler (see A.4.8.1.3.7) contains all the information required for a flowchart
(see A.4.8.1.3.2), it may be used to satisfy the requirement for the flowchart.
b.
Critical documents which are to be kept current and on file by the qualifying activity:
(1) SPC program plans/milestones, as applicable.
(2) Process flowcharts and baselines (wafer fabrication, assembly and test).
(3) General QCI procedures.
(4) Major change notification procedure.
(5) Internal visual inspection procedure.
(6) QM Plan
A.4.8.1.3.1 Functional block organization chart. This chart shall show, in functional block-diagram form, the lines
of authority and responsibility (both line and staff) for origination, approval, and implementation of the several aspects
of the quality assurance program. Names of incumbents are not required in this chart.
A.4.8.1.3.2 Examples of manufacturing flowchart. The flowchart for all devices shall reflect the complete
manufacturing processes being used at the time and shall show all manufacturing, inspection, testing and quality
verification points and the point where all materials or subassemblies enter the flow. The flowchart shall clearly show
any utilization of third party activities. The chart shall identify all major documents pertaining to the inspection of
materials, the production processes, the production environments, and production controls that were used. The
documents shall be identified by name and number. Changes approved thereafter shall be treated in accordance
with the approved document change control procedures in A.3.4.2.
96
MIL-PRF-38535K
APPENDIX A
A.4.8.1.3.3 Proprietary-document identification. A listing of proprietary documents and areas shall be included in
the program plan and maintained on a current basis (see A.4.8.1).
A.4.8.1.3.4 Examples of design, material, equipment, visual standard, and process instructions. An example of
each type of design, material, equipment, visual standard, and process instruction used in the manufacture of
microcircuits intended to be submitted for acceptance inspection under this specification shall be included in the
program plan. These may be either dummies or actual working documents, but shall, in either event, show the form
of the pertinent document; blank forms shall not be included.
A.4.8.1.3.5 Examples of records. Examples of records, complying with the requirements of A.4.8.1.3.4 for
instructions, shall be included in the program plan.
A.4.8.1.3.6 Manufacturer's internal instructions for internal visual inspection. The manufacturer's internal
instructions for internal visual inspection in accordance with test method 2010 or test method 2017, as applicable, of
MIL-STD-883 for the applicable device class, shall be included in the program plan.
A.4.8.1.3.7 Examples of travelers. Wafer fab, assembly, screening, and groups A, B, C, D (and E, if applicable)
travelers shall be included in the program plan and maintained on current basis. The traveler utilized for QCI lots
may be the same traveler as used for qualification lots. When in-line inspections are allowed (e.g., alternate group A
or B) the traveler shall include documentation of required inspections. The travelers shall include all manufacturer
imposed tests. The test traveler shall include all the following minimum information (if applicable):
a. Identification as to whether the lot is qualification or QCI.
b. Name or title of operation and specification number of each process or test.
c. PIN, date code, and manufacturer internal lot identification number(s).
d. Date(s) of test and operator identification.
e. Calibration control number or equipment identification of all major equipment components used for test.
f. Quantity tested and rejected for each process or test and actual quantity tested, if sampled.
g. Serial numbers of passing and failing devices when applicable.
h. Time in and out of process or test if critical to process or test results (e.g., burn-in and 96-hour window).
i. Specific major conditions of tests that is verifiable by operator including times, temperatures, RPMs, etc.
(Not required for screening and QCI traveler.)
j. The percent defective calculated for burn-in.
k. Burn-in/life test board serial number or test circuit identification number and revision.
l. All required variables data except for electrical tests (attachments permitted). (Not required for QCI
traveler.)
m. For electrical tests, test program number and revision and identify when variables data is required.
97
MIL-PRF-38535K
APPENDIX A
A.4.8.1.3.8 Examples of design and construction baseline. The design and construction baseline information (e.g.,
DSCC-VQC-42 “DSCC Microcircuit Materials and Construction Baseline Sheet”, or equivalent) shall be included in
the manufacturer's program plan and maintained under document control. The baseline form shall clearly show any
utilization of third party activities.
A.4.9 Self-audit requirements
A.4.9.1 Self-audit requirements. The intent of the self-audit program is to assure continued conformance to
specification requirements.
A.4.9.2 Definitions
A.4.9.2.1 Self-audit. The performance of periodic survey by the device manufacturer's designated personnel to
evaluate compliance to specifications.
A.4.9.2.2 Audit checklist. A form listing specific items which are to be audited.
A.4.9.3 General
A.4.9.3.1 Self-audit program. The manufacturer shall establish an independent self-audit program under the
direction of the quality organization to assess the effectiveness of the manufacturer's compliance to all applicable
specifications. The manufacturer's self-audit program which identifies key review areas, their frequency of audit, and
the corrective action system to be employed when variations from the approved procedures or specification
requirements are identified shall be included in the program plan. The self-audit program shall, as a minimum,
incorporate the following requirements.
A.4.9.3.1.1 Correction of deficiencies. A system to identify and correct any deficiencies (e.g., processing and
testing) or deviations from the specification requirements.
A.4.9.3.1.2 Deviation from critical documents. Provide for review of all deviations from critical documents, such as,
baseline(s), flowchart(s), traveler(s), QCI procedures, etc.
A.4.9.3.1.3 Training and retraining of auditors. Specify the selection and training/retraining requirements for
auditors.
A.4.9.3.1.4 Self-audit schedule and frequency. Specify the self-audit frequencies and require that a schedule be
established and adhered to.
A.4.9.3.2 Self-audit representatives. The quality assurance representatives or the designated appointees shall
perform all self-audits. The designated auditors shall be independent from the area being audited. If the use of an
independent auditor is not practical, then as a minimum, another individual should be assigned to participate in the
audit or review the results with the auditor from the area. The auditors shall be trained in the area to be audited, in
the applicable specification requirement and provided with an appropriate checklist for annotating deficiencies. Prior
to the audit, the assigned auditor(s) shall review the previous audit checklist to assure corrective actions have been
implemented and are sufficient to correct the deficiencies.
A.4.9.3.3 Audit deficiencies. All audit deficiencies shall be documented on the appropriate form and a copy
submitted to the department head for corrective action(s). All corrective actions shall be agreed to by the quality
organization or Material Review Board.
98
MIL-PRF-38535K
APPENDIX A
A.4.9.3.4 Audit follow-up. All audit reports shall be filed and maintained by the quality organization. The quality
organization shall establish a procedure to follow up on all audit deficiencies to assure that the corrective actions
have been implemented in a timely manner. A system (e.g., Management Review) shall also be established to
review the acceptability and timeliness of all corrective actions and to determine if any deficiencies have repeated
since the last required self-audit. If any deficiencies have occurred two or more times in the predetermined time
period, additional corrective actions shall be taken to assure immediate correction of the problem and the qualifying
activity (QA) shall be notified. The self-audit team shall perform a follow-up verification within 6 months of corrective
actions covering all deficiencies found during the QA audit and annual self-audit to assure corrective actions are
adequate and maintained.
A.4.9.3.5 Audit schedules and intervals. The original audit interval shall be established with a schedule by the
quality organization but in no case exceed 1 year for each area, unless authorized by the qualifying activity (QA). A
self-audit shall be conducted and corrective actions completed prior to the initial QA audit. Changes to the audit
schedule, due to being consistently above or below average performance on the self-audit, shall require approval of
the QA.
A.4.9.3.6 Self-audit report. The self-audit report shall be signed by the quality assurance representative
responsible for the quality assurance program's overall success or failure. The manufacturer shall make available to
the qualifying activity, during audits, the self-audit report, deficiencies, and corrective actions taken. This report shall
include a summary report of self-audit results categorized by deficiency type (e.g., nonconformance to specification
requirement(s), occurrences affecting product reliability, recurring deficiencies).
A.4.9.3.7 Self-audit areas. The self-audit shall be performed to assure conformance to the checklist and
specification in at least the following areas:
Calibration and preventive maintenance
Fabrication
Deionized (DI) water controls
Training
Assembly operations
Electrical test
Test methods
Failure analysis
Qualification/QCI system
Document control
Environmental control
Incoming inspection
Inventory control and traceability
ESD handling control program
Design change control
Statistical process control, as applicable
Third party subcontractors (see note)
NOTE 1: The QA approval of a subcontractor second and third party facility does not alleviate the manufacturer of
validating product specific requirement.
NOTE 2: The self-audit shall include any activities performed by a subcontractor, and shall ensure full compliance
by the subcontractor to this appendix and the device specification or drawing. Any deviations or questionable
areas shall be brought to the attention of the qualifying activity. QA approval of subcontracted second party
facilities may be used to satisfy the subcontractor audit requirement.
A.4.9.3.8 Self-audit checklist. The audit checklist shall be prepared by the quality organization and maintained
under document control. The checklist shall assure that the quality assurance system is adequate and followed by all
personnel in each area.
99
MIL-PRF-38535K
APPENDIX A
A.5 PACKAGING
A.5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When packaging of material is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point’s packaging activities within the Military Service or
Defense Agency, or within the military service’s system commands. Packaging data retrieval is available from the
managing Military Department’s or Defense Agency’s automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
A.5.2 Packaging requirements. The packaging of microcircuits shall prevent mechanical damage to the device
during shipping and handling and the packaging material shall not be detrimental to the device. In addition,
microcircuits which have been determined to require electrostatic discharge protection, category A or class 1 or 2 by
test method 3015 of MIL-STD-883 (see A.4.4.2.8), shall be packaged in conductive material or packaged in
accordance with one of the following:
Category A.
(1) Unit container suitable for ESD protection.
or
(2) Conductive noncorrosive rail with noncorrosive and conductive or antistatic foam plugs at both ends of
each rail which prevents movement.
or
(3) Antistatic noncorrosive rail with noncorrosive and conductive or antistatic foam plugs at both ends of each
rail which prevents movement. Antistatic rails shall be packaged in conductive, electrostatic field shielding
material.
(Other packaging methods shall require the approval of the acquiring activity.)
NOTE: Rails (e.g., multiple carriers) coated but not impregnated with antistats shall be used only if the antistatic
properties are proven to be intact on the surface. These measurements shall conform to A.3.1.3.22 and EIA541.
A.5.2.1 Carrier and container. When specified on the detail specification or order, microcircuits shall be supplied
mounted in the carrier (unit or multiple) and carrier container, or carrier and unit container. Marking on the carrier or
unit container shall be as specified in A.5.2.2.
A.5.2.2 Marking of container. All of the markings specified in A.3.6, except the index point and serialization, shall
appear on the carrier, unit pack (e.g., individual foil bag), unit container, or multiple carriers (e.g., tubes, rails,
magazines) for delivery. An industry standard symbol for identifying ESD sensitive items (e.g., JESD471 symbol)
shall be marked on the carrier or container. However, if all the marking specified above is clearly visible on the
devices and legible through the unit carrier or multiple carriers, or both, then the ESD marking only (in accordance
with MIL-STD-1285) shall be required on the multiple carriers. These requirements apply to the original or
repackaged product by the manufacturer or distributor.
100
MIL-PRF-38535K
APPENDIX A
A.6 NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
A.6.1 Intended use. Microcircuits conforming to this appendix are intended for use for Government microcircuit
application and logistic purposes. For maximum cost effectiveness while maintaining essential quality and reliability
requirements, it is recommended that, for initial acquisitions for original equipment complements, the device class
appropriate to the need of the application (see A.3.4) be acquired.
A.6.2 Acquisition requirements. Acquisition documents should specify the following:
a.
b.
c.
d.
e.
Title, number, and date of the specification.
PIN and compliance identification (if applicable).
Test data to be furnished.
Packaging Requirements (see A.5).
Requirement for radiation hardness assurance testing (see A.4.4.2.5 and A.4.5.6).
A.6.2.1 Lead finish designator. For Government logistic support, the A lead finish will be ordered and supplied to
the end user when X is used in place of the A, B, C, D, or E lead finish designator. If the device type is not available
with lead finish A, the same PIN will be ordered except that B, C, D, or E will be used as the lead finish designator
depending upon which is available.
101
MIL-PRF-38535K
APPENDIX B
SPACE APPLICATION
B.1 SCOPE
B.1.1 Scope. This appendix presents the requirements that are to be used to supplement this specification and the other
applicable appendices for space level microcircuits. The manufacturer's process may include innovative and improved processes
that result in an equivalent or higher quality product, provided that the process used to evaluate and document these changes has
been reviewed and approved by the qualifying activity after coordination with the government space community (e.g., DTRA, NASA,
NRO, and AFSMC). The approach outlined in this appendix is a proven baseline that contains details of the screening and
technology conformance inspection (TCI) procedures. Manufacturers are to be able to demonstrate a process control system that
achieves at least the same level of quality as could be achieved by complying with this appendix. This appendix is intended for
product to be used in space applications. This appendix is a mandatory part of the specification. The information contained herein is
intended for compliance.
B.2 APPLICABLE DOCUMENTS.
B.2.1 General. The documents listed in this section are specified in sections B.3 or B.4 of this appendix. This section does not
include documents cited in other sections of this appendix or recommended for additional information or as examples. While every
effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified
requirements of documents cited in sections B.3 and B.4 of this appendix, whether or not they are listed.
B.2.2 Government documents.
B.2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this
document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation
or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-M-38510
- Microcircuits, General Specification For.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
- Test Method Standard Microcircuits.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order Desk,
700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
B.2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless
otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
- Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of Semiconductor Devices.
(Copies of these documents are available online at http://www.astm.org/ or from ASTM International, 100 Barr Harbor
Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.)
102
MIL-PRF-38535K
APPENDIX B
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JESD57 - Test Procedures for the Measurement of Single Event Effects in Semiconductor Devices from Heavy Ion
Irradiation.
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology Association,
3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute the
documents. These documents also may be available in or through libraries or other informational services.)
B.2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this
document and the references cited herein(except for related specification sheets), the text of this document takes precedence.
Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
B.3 REQUIREMENTS
B.3.1 General. Microcircuits supplied to this appendix shall be manufactured and tested in accordance with the approved DLA
qualifying activity (QA) baselines and the applicable requirements specified herein. Upon approval from the Technology Review
Board (TRB) and the qualifying activity (QA), screening and TCI tests may be modified/optimized for qualified manufacturer listing
(QML) class V or class Y (class level S) product, provided substantiating data is submitted to demonstrate that the manufacturer has
a defined capability on the manufacturing line which is under control, repeatable and reliable to and produces product that that meets
the intent of the original requirements. These changes cannot affect any thermal, mechanical or electrical parameters, which affect
form, fit, function or radiation hardness assurance level (when applicable) of the device, defined within the device specification or
standard microcircuit drawing (SMD). The space community (e.g., DTRA, NASA, NRO, and AFSMC) and the customer shall be
notified of major changes to the manufacturer's quality management (QM) plan. Any optimization proposed by the manufacturer
must be presented to the qualifying activity and coordinated with the space community with accompanying supporting data to validate
the proposed change. The optimization must be approved by the QA in writing prior to implementation. For class V and class Y
(class level S) product marked with RHA designator required to meet appendix C and table C-I group E tests.
B.3.1.1 Acquiring activity. When specified by the acquisition document (purchase order), the acquiring activity may:
a. Require prior notification of major changes to the baselined processes, procedures, or testing.
b. Require independent verification of wafers (unprobed) or packaged devices (technology characterization vehicle (TCV),
standard evaluation circuit (SEC), or actual devices) by original equipment manufacturer’s (OEM's) or Government
agencies.
c. Request screening and TCI summary data is delivered with the devices.
B.3.2 Conflicting requirements. In the event of conflict between the requirements of this appendix and other referenced
documents, the order of precedence shall be as follows:
a. The acquisition document (order).
b. Applicable device specification.
c. This appendix.
d. MIL-PRF-38535.
e. Specifications, standards, and other documents referenced in 2.1 of MIL-PRF-38535.
NOTE: The acquisition document may specify additional requirements, but shall not reduce or waive any requirements herein.
103
MIL-PRF-38535K
APPENDIX B
B.3.3 Validation (certification). Validation of a manufacturing line for production of integrated circuits for use in space systems
shall be accomplished by a team headed by DLA Land and Maritime with members from the space community (e.g., NASA, NRO,
DTRA, and AFSMC), other interested services, and the customer as necessary.
B.3.4 Manufacturing verification. When specified, the manufacturing verification procedure for new technology shall include
characterization of actual devices at -55°C and 125°C (or high and low temperature as specified in the device specification) with DC,
AC and full functional electrical parameters. Life testing of new technologies shall be determined by the manufacturer based on
characterization with full temperature testing and read and record measurements every 1000 hours. Characterization shall also
include a complete evaluation of potential failure mechanisms and mitigations strategies, calculation/evaluation of activation energy
and acceleration factors for voltage and temperature, and establishment of long term reliability failure rates. The life test may be
modified based on the determination of failure mechanisms and activation energy (see TM 1016 for guidance with a goal of 15 year
operating life at +65°C ≤ TJ ≤ 95°C. The manufacturer shall determine worst case for their devices). Additional requirements for
characterization are included in appendices G and H (see H.3.1.9 c (v)), and are a requirement for class V and class Y (class level S)
devices.
B.3.5 Design verification. When specified, a fully functional VHSIC Hardware Description Language (VHDL) model shall be
available.
B.3.6 Part or identifying number (PIN). Each class V and class Y level QML microcircuit shall be marked with the device class
designator "V" or “Y” in place of the "Q" designator in the PIN format, see 3.6.2a herein. Devices procured to MIL-M-38510 PINs
shall be marked in the format in 3.6.2b herein with the device class designator "S".
B.3.7 Serialization. Prior to the first recorded electrical measurement in screening, each class V and class Y microcircuit shall be
marked with a unique serial number assigned within the level of the individual microcircuit within that inspection lot.
B.3.8 Traceability. For class V and class Y, inspection lot records shall be maintained to provide traceability from the device serial
number to the specific wafer lot or to the specific wafer when testing to any group E subgroup (see table C-I), is performed on a wafer
by wafer basis.
B.3.9 New technology requirement. For class level S product, this is a product family, material, or process that has never been
previously characterized and qualified by the manufacturer for space applications, and is detailed in the manufacturer’s new
technology insertion program (see 3.4.1.1 and 6.4.42). Existing devices that meet the major change criteria of table A-I are to be
evaluated in conjunction with the qualifying activity to determine if the change should be classified as a new technology, as defined in
3.4.1.1 prior to finalized qualification plan implementation.
B.3.10 Package integrity demonstration test plan (PIDTP) . Manufacturability, test, quality and reliability issues unique to specific
non-traditional assembly/package technologies intended for space applications must be addressed in a PIDTP at the start of the
package design cycle. The PIDTP shall be approved by QA after consultation with the space community. The technologies requiring
such a plan are: a) non-hermetic packages (e.g., class Y), b) flip-chip assembly, and c) solder terminations. Microcircuits employing
more than one of these technologies shall include elements for each in the PIDTP (see H.3.4.4.1).
B.3.11 Solder terminated microcircuits. Microcircuits employing solder terminations (e.g., Ball Grid Array-BGA or Column Grid
Array- CGA) shall meet all applicable appendices and Appendix B herein and must be addressed in the package integrity
demonstration test plan (PIDTP) (see H.3.4.4.1.3).
B.3.12 Assembly materials. For BGA and CGA packages material contents for solder balls, bumps and solder columns shall be
specified on device SMDs and QM plan (see H.3.4.4.1.3) and organic materials shall be included in the PIDTP if applicable.
B.3.13 Moisture sensitivity level (MSL) . Non-hermetic devices such as class Y can exhibit sensitivity to moisture-induced
stress and must be handled, packaged, and stored in a proper manner to avoid potential damage during assembly
solder reflow attachment and/or repair operations. Moisture sensitivity levels are defined as a rating identifying a
component’s susceptibility to damage due to absorbed moisture when subjected to reflow soldering. The manufacturer
shall be required to define the moisture sensitivity level (MSL) for each non-hermetic device in accordance with JEDEC
J-STD-020.
104
MIL-PRF-38535K
APPENDIX B
B.4 VERIFICATION
B.4.1 Screening test for class V and class Y . In addition to the screening tests specified in the main body of this specification, the
screening tests specified below shall be performed, unless prior approval for deletion or modification is given by the qualifying
activity.
a. Nondestructive bond pull (NDBP) in accordance with TM 2023 of MIL-STD-883, or approved alternate verified during
validation, on each interconnect bond. An alternate method, if necessary, shall consider a 100 percent visual inspection of
the elements to be bonded (e.g., bond pads and posts) prior to the bonding operation, as one part of an overall alternate
method. For flip chip package devices, Nondestructive bond pull (NDBP) test is not required.
b. Particle impact noise detection (PIND) in accordance with TM 2020, condition A of MIL-STD-883 on each device. For
devices without a cavity such as class Y or flip chip devices with underfill, Particle impact noise detection (PIND) test is not
applicable.
c. Radiograph inspection in accordance with TM 2012 of MIL-STD-883 on each device. Only one view is required
for flat packages and leadless chip carriers having lead terminal metal on four sides.
d. For flip chip technology C-SAM inspection is required.
i) C-SAM inspection shall be performed on each flip chip device in accordance with TM 2030 of MIL-STD-883.
ii) C-SAM test shall be performed on each device when a heat sink or lid is attached directly to the back side of the
flip chip die in accordance with TM 2030 of MIL-STD-883.
e. Seal test (TM 1014) is not required for class Y non-hermetic devices.
f. Burn-in test in accordance with TM 1015 of MIL-STD-883 shall be conducted on each device for 240 total hours at +125°C.
For a specific device type, the burn-in duration may be reduced from 240 to 160 hours if three consecutive production lots
of identical parts, from three different wafer lots pass percent defective allowable (PDA) requirements after completing 240
hours of burn-in. Sufficient analysis (not necessarily failure analysis) of all failures occurring during the run of the three
consecutive burn-in lots shall not reveal a systematic pattern of failure indicating an inherent reliability problem which would
require that burn-in be performed for a longer time. Other burn-in conditions may be considered by a class level S
validation team. The manufacturer's burn-in procedures shall contain corrective action plans, approved by the validation
team, for dealing with lot failures. PDA shall be in accordance with table IA as specified herein or TM 5004 of MIL-STD-
883 for class level S. Static burn-in may be substituted for high temperature reverse bias burn-in based on device
technology and must be approved by the QA. Moreover, burn-in test time-temperature regression table I of TM 1015 of
MIL-STD-883 can be used for determination of reverse bias burn-in time and temperature.
g. Wafer lot acceptance testing in accordance with TM 5007 of MIL-STD-883 or an alternative which meets the minimum
requirements of TM 5007 shall be conducted on each wafer lot producing class V or S devices (see H.3.2.1.4).
B.4.2 Screening for solder termination microcircuits of class V and class Y . In addition to the screening tests specified in the main
body of this specification for solder terminated microcircuits, the screening tests specified below shall be performed, unless prior
approval for deletion or modification is given by the qualifying activity.
B.4.2.1 Ball grid array (BGA) microcircuits . For BGA microcircuits post-assembly screening burn-in test may be performed before
the solder balls have been attached to the package. Electrical test shall be performed across the full military temperature range after
attachment of the solder balls on the package.
B.4.2.2 Column grid array (CGA) microcircuits . For CGA microcircuits post-assembly screening (including electrical test and
burn-in) may be performed before the solder columns have been attached to the package. Electrical test shall be performed across
the full military temperature range before attachment of the solder columns on the package.
After column attach, electrical test shall be performed at 25°C (Group A, subgroup 1) as a minimum to verify that no
electrical/mechanical damage has been introduced due to the column attach process, and visual inspection shall be performed
according to TM 2009 of MIL-STD-883.
105
MIL-PRF-38535K
APPENDIX B
B.4.3 Technology conformance inspection (TCI) for class V and class Y. In addition to the TCI tests specified in the main body of
this specification (see table II to table V), unless otherwise noted herein, the TCI requirements listed below apply on each lot of
deliverable devices. The group and table references correspond to those contained herein. These requirements do not replace the
normal TCI testing requirements of this specification. The following additions or exceptions apply to the TCI tests specified in the
main body of this specification.
Table III, group A electrical test shall be performed on each deliverable lot using actual devices. For those lots having a
quantity of less than 116 devices, the tests shall be imposed on a 100 percent basis and the lot accepted on zero test
rejects. If a microcircuit fails a group A test parameter as a result of faulty test equipment or operator error, the cause shall
be determined and documented, and corrective action shall be implemented and documented. The affected lot may then be
accepted by being resubmitted to the failed test parameters using a 116/0 or 100 percent/0 sample.
If a microcircuit fails a group A test due to a previously unscreened parameter, the affected lot may be accepted by
screening the lot 100 percent for the failed parameters, and resubmitting a group A sample to the failed subgroup using a
116/0 or 100 percent/0 sample. Any failures resulting from the second screen shall count toward the lot total percent
defective. PDA shall be in accordance with table III herein or TM 5005 of MIL-STD-883 for class level S.
Group A electrical tests are not required to be performed when the following conditions are met:
(1) The final electrical tests of the 100 percent screening test (see table I) includes all required group A tests (see
table III).
(2) The test setup and test conditions are verified by a certified monitor other than the test operator.
(3) Analysis of failures does not indicate a generic or lot related reliability problem.
Note: In no event shall the absence of separate group A testing result in a failure to satisfy the data requirements of section
B.3.1.1c.
a. Table II, group B, shall be performed on actual devices except as noted herein. Empty device packages or electrical
rejects may be used for subgroups B-1 and B-3, and electrical rejects that have been subjected to the 100 percent
screening tests may be used for subgroup B-2. The electrical rejects and empty packages shall have been produced under
equivalent conditions as the production lot. The TRB shall determine that the intent of the tests is not violated.
For classes V and Y exceptions and additional requirements are as follows:
1. Resistance to solvents test is not required for laser marked device.
2. Device packages with lid/heat sink attached on the back side of a flip chip die require a lid shear or lid torque test.
Manufacturers shall submit test procedures of lid shear test for approval of QA. Lid torque test shall be performed
in accordance with TM 2024.
3. Device with solder terminations:
(i) For ball grid array (BGA) packages, ball shear test shall be performed in accordance with JESD22-B117.
(ii) For column grid array (CGA) packages, solder column pull test shall be performed in accordance with
TM 2038.
106
MIL-PRF-38535K
APPENDIX B
b. Table IV, group C or group B, Subgroup 5 life test requirements shall be met using one of the procedures below.
(1) Life test may be performed on a quantity (accept) criteria of 22(0) for 2000 hours at 125°C or equivalent per TM
1005 to attain 44,000 device hours. For lots greater than 200, actual devices shall be used. For lots less than or
equal to 200, the number of actual devices shall be the greater of 5 devices or 10 percent of the lot, and the SEC
shall supplement actual devices to result in a sample of 22 unless acceptable group C data from the same lot of
SEC is available for the previous 3 months. The SEC shall have been produced under equivalent conditions as
the production lot and as close in time as feasible, but not to exceed a 3 month period.
Note: For ASICs, a sample size of 5 actual devices may be used with the balance being made up of the SEC.
(2) Group C life tests shall be performed on the initial production lot of actual devices from each wafer lot, in
accordance with table IV herein. Group C life tests are not required to be performed on subsequent production
lots when all the following conditions are met:
(a) Subsequent production lots utilize die from the same wafer lot as the initial production lot.
(b) Wafers or die remaining from the initial production lot are to be stored in dry nitrogen or equivalent controlled
storage, and in covered containers.
(c ) No major changes to the assembly processes have occurred since the group C test was performed on the
wafer lot.
c. Table V, group D test requirements for package technology style characterization testing (see table H-IIX), and group D
testing on the initial production lot utilizing the package family of interest, shall be in accordance with MIL-PRF-38535 and
the manufacturer’s approved QM plan. A package family consists of a set of package types with the same package
configuration (e.g., BGA, CGA), material type (e.g., alumina, beryllium oxide (BeO)), package construction techniques (e.g.,
single layer, multilayer), ball (bumps) and column spacing with identical package assembly techniques (e.g., material and
type of seal, ball attach, underfill, solder bumps or wire bond method and wire size, die attach method and material). All
new alternate sources of package elements shall be qualified to the applicable group D tests and shall meet paragraph
H.3.4.4.1.
d. Group E inspection shall be performed in accordance with table C-I of appendix C. Metal oxide semiconductor (MOS)
microcircuits, when specified, shall be tested for time dependent effects post total dose irradiation. When 100 percent latch-
up screen is specified, the PDA shall be 5 percent or one device, whichever is greater. The devices used for group E testing
shall pass the specified group A electrical tests. An alternate procedure to table C-I group E test may be used upon
approval of the qualifying activity.
107
MIL-PRF-38535K
APPENDIX B
(This page intentionally left blank.)
108
MIL-PRF-38535K
APPENDIX C
RADIATION HARDNESS ASSURANCE
C.1 SCOPE
C.1.1 Scope. This appendix presents the requirements which are to be used to supplement MIL-PRF-38535 for device
manufacturers supplying radiation hardness assurance (RHA) microcircuits. This appendix is a mandatory part of the
specification. The information contained herein is intended for compliance.
C.2 APPLICABLE DOCUMENTS
C.2.1 General. The documents listed in this section are specified in sections C.3, C.4, or C.5 of this appendix. This section
does not include documents cited in other sections of this appendix or recommended for additional information or as examples.
While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all
specified requirements of documents cited in sections C.3, C.4, and C.5 of this appendix, whether or not they are listed.
C.2.2 Government documents.
C.2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of
this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
- Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-814 - Ionizing Dose and Neutron Hardness Assurance Guidelines for Microcircuits and Semiconductor
Devices.
MIL-HDBK-815 - Dose-Rate Hardness Assurance Guidelines.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
C.2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
ASTM F1892
- Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by
Heavy Ion Irradiation of Semiconductor Devices.
- Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor
Devices.
(Copies of these documents are available online at http://www.astm.org/ or from ASTM International, 100 Barr
Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.)
109
MIL-PRF-38535K
APPENDIX C
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JESD57 - Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion
Irradiation.
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute
the documents. These documents also may be available in or through libraries or other informational services.)
C.2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this
document and the references cited herein (except for related specification sheets), the text of this document takes precedence.
Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been
obtained.
C.3 REQUIREMENTS
C.3.1 General. Microcircuits supplied to this document shall be manufactured and tested in accordance with approved
baseline manufacturing flow and the requirements herein. RHA qualified manufacturer listing (QML) manufacturers shall meet
all of the requirements of MIL-PRF-38535 and the additional requirements specified herein. The Technology Review Board
(TRB) shall not make major changes to the baselined design rules, processes, procedures, or testing without notifying the
qualifying activity prior to implementation of the change.
C.3.2 TRB duties. The TRB duties shall be as outlined in G.3.2.2.
C.3.2.1 TRB/RSS. In the case of a Radiation Source of Supply (RSS) (see 6.4.23), the RSS shall establish a TRB and
representatives from the device manufacturer, assembly facility, and test facility shall be part of the TRB. The RSS TRB shall
be responsible for all aspects of the device manufacturing process. Details of how all aspects of the device manufacturing
processes are controlled shall be documented in the RSS quality management (QM) plan. These include conversion of
customer requirements, design, wafer fabrication, assembly, test, RHA testing and verification, and characterization for device
specification.
C.3.3 RHA QM plan. A RHA QM plan shall be developed to document the major elements of the manufacturer's QML
process (G.3.3). This plan establishes the procedures to be followed to ensure that the devices meet the Radiation Hardness
Assured Capability Level (RHACL). The RHA QM plan shall be kept current and up-to-date and reflect all major changes to the
RHACL.
C.3.3.1 Qualification testing to RHA levels Qualification to a RHA level shall consist of characterization to the highest offered
RHA level of total ionizing dose (TID). The conditions for radiation testing shall consist of exposing the devices in a step-stress
manner to the highest dose level offered and as a minimum the two next consecutive lower RHA levels. The levels are
identified as follows: 3K Rad(Si), 10K Rad(Si), 30K Rad(Si), 50K Rad(Si), 100 K Rad(Si), 300K Rad(Si), 500K Rad(Si), 1M
Rad(Si). The radiation testing plan (QM Plan) and qualification to the appropriate quality and reliability assurance level for
device classes B, Q, S, V, Y or T shall be submitted for QA approval.
C.3.4 RHA/QML certification requirements. See 3.4.1 herein. In addition to standard flow certification the manufacturer’s
RHA certification testing shall be performed by a laboratory that has received suitability from the qualifying activity (QA).
110
MIL-PRF-38535K
APPENDIX C
C.3.4.1 Process capability demonstration. The manufacturer shall meet the requirements in 3.4.1.1 and shall also meet the
following for an RHA device. A RHACL shall be established for the environments selected by the TRB and consistently
demonstrated for a technology at the specified level of electrical performance. Changes in the RHACL may require
reevaluation of these capabilities by the TRB. Listed below are the radiation environments that shall be addressed:
a. Natural:
(1) Total ionizing dose and time dependent effects for ionizing radiation (MIL-HDBK-814, ASTM F1892 and TM 1019
of MIL-STD-883).
(2) Single-Event-Effects (SEE): Including upset, latch-up, burnout, gate rupture caused by Galactic Cosmic Rays
(GCR), Solar Enhanced Particles, and energetic neutron and protons (ASTM F1192 or JESD57).
(3) Displacement damage: Caused by energetic neutrons and protons.
b. Weapon:
(1) Dose rate: Upset, latch-up, burnout (MIL-HDBK-815, TM 1020, TM 1021, and TM 1023 of
MIL-STD-883).
(2) Neutron irradiation (MIL-HDBK-814 and TM 1017 of MIL-STD-883).
(3) Total ionizing dose (MIL-HDBK-814 and TM 1019 of MIL-STD-883).
C.3.4.1.1 Design. The manufacturer shall address the design methodology for the following areas of design:
(NOTE: These are also applicable to third party design centers.)
a. Model verification. Model verification shall provide evidence that models defining device response in radiation
environments accurately predict the nominal and worst-case circuit response over operating voltage limits and over the
temperature range selected for the technology at the RHACL.
b. Design rule verification. The vendor shall document his design rules for radiation hardening his technology and
demonstrate his procedures for verifying rule compliance in the context of Design Rules Check (DRC), Electrical Rules
Check (ERC) and reliability checking procedures (see G.3.1.b, G.3.4.1.c, H.3.2.1.1.1 b). These rules cover, as a
minimum:
(1) DRC: Geometric and physical.
(2) ERC: Shorts and open, connectivity.
(3) Reliability verification: Electromigration (current density), latch-up, electrostatic discharge (ESD), and fuse/anti-
fuse reliability.
(4) RHA rules: The vendor shall document their design rules for radiation hardening in their technology and the
procedures for verifying rule compliance.
c. Performance verification. The vendor shall demonstrate his ability to predict the response of the post-irradiation
performance at the RHACL including the effects of the specified limits for temperature and voltage variations and the
influence of process variations (see H.3.2.1.1.1.c). Any deviation from these requirements shall receive qualification
activity approval.
111
MIL-PRF-38535K
APPENDIX C
C.3.4.1.2 Wafer fabrication. As part of certification, the manufacturer shall identify a specific technology or technologies for
the wafer fabrication (see H.3.2.1.2).
a. Statistical process control (SPC) and in-process monitoring program for RHA. SPC is especially critical for maintaining
a technology’s RHACL. This occurs since relatively minor changes in a process flow can drastically effect device
radiation performance. The manufacturer shall identify and document all critical process nodes associated with RHA.
See H.3.2.1.3 for a general list of critical process steps, any deviation from this list shall receive qualifying activity
approval.
b. Technology characterization vehicle (TCV) program. The TCV program is an integral part of a technology’s RHA and
shall be carefully configured to ensure the accurate characterization of a technologies radiation capability. The TCV
program shall be designed to support RHA activities, parametric extraction, model development and validation, SPC
and failure mode analysis. (see H.3.2.2.2.1) The TCV structures shall be used to determine a technology’s RHACL
and in addition determine failure modes and mechanisms by irradiation to 2x RHACL or failure, whichever comes first.
Failure can be either functional or parametric.
c. TCV certification. When radiation hardness is a requirement of the technology, special structures shall be
incorporated into the TCV program to characterize the technology's capability for producing devices with assured
radiation hardness to the RHACL. To determine that the RHACL is appropriate for the technology, the vendor shall
irradiate the TCV to 2x the RHACL or until failure to determine failure mode and mechanism(s). Also, the bounds of
the radiation response shall be determined by testing the appropriate TCV test structures for worst case bias
conditions, annealing conditions, and temperature.
d. Standard evaluation circuit (SEC). The SEC shall utilize all relevant radiation hardness assurance design rules and
shall be used to demonstrate the specified level of performance at the RHACL. When radiation hardness assurance is
a requirement of the technology, the SEC shall be used to certify and monitor the RHACL of a specific fabrication
technology in a specific fabrication facility. The SEC shall be designed so it can be used to assess and monitor the
radiation hardness of the fabrication process and design rules
(see H.3.4.3). The SEC reliability data, including
failure analysis results, shall be available for review by the qualifying activity. For RHA environments, the manufacturer
shall irradiate SEC to 2x the requested RHACL or to failure (whichever occurs first) under worst case bias, annealing
and temperature conditions as a demonstration of the technology’s capability to meet the RHACL. A different SEC
may be required whenever the design rules, the materials, the basic processes, or the basic functionality of the
technology differ.
e. Process monitor (PM). The process monitor is an integral part of a technology’s RHA SPC program for in-line process
monitoring. The structures shall be carefully designed and configured to ensure the accurate characterization of a
technology’s radiation performance and capability. The PM shall support wafer acceptance testing and TCI (see
H.3.2.1.3.2). Any deviation from this guidance shall be justified to the qualifying activity.
When RHA is a requirement of the QML line, as a minimum, process monitors for RHA qualified technologies shall
include test structures to support the following:
(1) Metal oxide semiconductor (MOS) RHA parameters:
(a) Gate oxide thickness; Structures shall be included to ensure gate oxide thickness since this is a critical
parameter affecting radiation performance.
(b) The following parameters shall be measured as a function of total ionizing dose:
(i)
Threshold voltage (VT); The linear VT for each transistor in a cell.
(ii) Linear transconductance (gm); The linear gm for a set of transistors.
112
MIL-PRF-38535K
APPENDIX C
(iii) Ion/Ioff (leakage current).
(iv) Propagation delay time (tPD); A test structure in the form of a functional circuit such as an inverter or
register chain shall be available to support this measurement.
(v) Field transistor leakage; Field transistor leakage for the minimum design/layout rules.
(2) Bipolar parameters. The bipolar parameters should be those found in H.3.2.1.3.2 c and shall be measured as a
function of total ionizing dose and neutron fluence (as appropriate).
(3) Gallium arsenide (GaAs) parameters. The following parameters should be measured as a function of total ionizing
dose and neutron/proton fluence (as appropriate).
(a) Sheet resistance.
(b) Isolation; An ohmic transmission line structure should be included to measure contact resistance and transfer
length.
(c) FAT FET; A long length gate FET suitable for the measurement of Schottky barrier height, ideality factor,
carrier concentration, and channel depth should be available.
(d) GaAs FET parameters; see H.3.2.1.3.2 d.
(4) Radiation hardness assurance. When RHA is a requirement of the technology, the PM shall include test
structures to monitor the following phenomena, as applicable:
(a) Dose-rate latch-up.
(b) Dose-rate upset.
(c) Single-event effects (SEE).
(d) Total ionizing dose.
(e) Displacement damage from neutron or proton irradiation.
(5) Other RHA considerations. In addition, test structures to monitor and characterize radiation response mechanisms
and for linear circuit applications shall be included (as appropriate). These structures would include but not be
limited to:
(a) Matched transistor pairs for offset current and voltage characterization.
(b) Annular and dual or multi-edged transistor sets for sub threshold I-V characterization.
(c) Four contact devices for charge pumping measurements.
113
MIL-PRF-38535K
APPENDIX C
C.3.4.1.3 Wafer acceptance plan. The TRB shall develop and demonstrate a wafer acceptance plan based on electrical and
radiation measurement of parametric monitors (PMs). PMs shall be used to determine wafer and wafer lot uniformity and latch-
up immunity (when specified). Further testing of the actual device to table C-I may be required. As an option to actual device
testing, after initial establishment of device specification and device post-irradiation parameter limits (PIPL), the following
procedures are presented as examples for the specified radiation environments:
a. Latch-up: The PM should utilize worst case latch-up structures to determine latch-up holding voltage at maximum
temperature. The holding voltage shall be greater than the maximum rated voltage.
b. SEE: The PM should utilize SEE structures such as cross-coupling resistors to memory cells to assure critical
parameters agree with worst case acceptance criteria.
c. Dose rate: The PM should utilize structures to ensure rail span collapse does not cause upset or burnout or both and
that the metallization resistivity, contact resistance, via resistance, epitaxial layer (EPI), substrate resistivity, and
minority carrier lifetime specifications are met.
d. Total ionizing dose: The PM should utilize structures such as capacitors and transistors to ensure that critical
parameters agree with worst case PIPL values.
C.3.5 On-site validation. In addition to the requirements in 3.4.1.3 the on-site validation shall include RHA test procedures
and RHA data reduction.
C.3.5.1 Technology validation. The general requirements for a technology validation are defined in 3.4.1.4. For RHA
technology the following items shall be added:
a. Radiation test procedures.
b. RHA data reduction (e.g., interface state and oxide trapped charge separation).
C.3.6 RHA packages. Packages used for RHA microcircuits shall be characterized for effects that may influence the
hardness of packaged product. Characterization shall include impedance of the power and ground distribution network,
impedance contributions of bond wires and die attach, and the impedance associated with any passive elements included as
integral parts of the package. Qualification of the same die in different packages shall require demonstration either by test or
similarity analysis.
C.3.7 Demonstration vehicles. The demonstration vehicles shall be as described in H.3.4.1.3. Each demonstration vehicle
shall operate and perform in compliance with the device specification and to the RHACL for a radiation hardened process
(which shall be submitted to the qualifying activity) and shall be manufactured in packages which have been tested to C.3.6
herein prior to use for qualification. For a technology that has die as its primary product, the demonstration vehicle shall be
suitably packaged to allow evaluation of the technology without adversely affecting the outcome of the tests.
C.3.7.1 Qualification test plan. See H.3.4.2. Note that for RHA, the die traceability shall be to the individual wafer.
C.3.7.2 Qualification test report. For RHA testing, the pre and post irradiation, electrical parameters and the transient and
SEE test conditions shall be retained by the manufacturer.
114
MIL-PRF-38535K
APPENDIX C
C.4 VERIFICATION
C.4.1 Traceability. Traceability to the wafer lot level (for GaAs to wafer level) shall be provided for all delivered microcircuits.
Traceability shall document, as a minimum, the completion of each step required in design (when applicable), fabrication,
assembly, test and any applicable qualified rework procedure.
C.4.2 Design requirements. The manufacturer shall show evidence that all QML/RHA product has been through the qualified
RHA technology flow. For RHA devices, sample testing of each design to verify PIPL shall be conducted to determine total
dose and neutron hardness level, dose rate upset threshold, latch-up immunity (when specified) at maximum temperature and
voltage, and linear energy transfer threshold (LETTH) for upset and latch-up as well as the cross section for SEE. If simulation
models can be verified by test to address these concerns, they would be acceptable. It is anticipated that several designs of
each ASIC family shall be tested.
C.4.3 Radiation response characterization. When specified in the acquisition document, radiation response characterization
data shall be provided for QML microcircuits in those environments specified in the device specification. The characterization
shall be obtained in increments of irradiation levels to failure or to a radiation level at or beyond the specification level as
determined by the TRB. The characterization data shall be accompanied by the mean and standard deviation of the critical
parameters. The results obtained from table C-I testing herein shall be added to the characterization data (at fluence level,
dose rate, and parameter levels defined in the device procurement specification test conditions) periodically.
C.4.4 End-of-line technology conformance inspection (TCI) testing (option 1). Group E inspection shall include radiation
hardness assurance (RHA) tests on each wafer lot. The PIPL, transient and single event phenomenon (SEP) response (as
applicable), and test conditions shall be as specified in the device specification. End-of-line TCI testing shall be performed as
recommended in table J-I herein. Requirements as detailed in TM 5005 of MIL-STD-883 may be used, with qualifying activity
approval, in place of the TCI requirements herein. All group E testing shall be performed on microcircuits to be delivered as
RHA QML microcircuits.
Group E inspection is required only for parts intended to be marked as RHA. RHA quality conformance inspection sample
tests shall be performed at the level(s) specified and in accordance with table C-I herein. The applicable subgroups of group E
shall be performed when specified in the acquisition document. The actual devices used for group E testing shall be assembled
in a qualified package and, as a minimum, shall pass table I, group A, subgroups 1, 7, and 9 at +25°C prior to irradiation. If a
manufacturer elects to eliminate a quality conformance inspection step by substituting an in-process control or statistical
process control procedure, the manufacturer is only relieved of the responsibility of performing the TCI operation associated
with that step. The manufacturer is still responsible for providing a product which meets all of the performance, quality, and
reliability requirements herein and in the device specification. Documentation supporting substitution for TCI shall be retained
by the manufacturer and available to the qualifying activity upon request. For some devices, there are differences in the total
dose radiation response before and after burn-in. Unless it has been shown by prior characterization or by design that burn-in
has negligible effect (parameters remain within post-irradiation specified electrical limits) on the total dose radiation response,
one of the following shall be done:
a. The manufacturer shall subject the radiation samples to the specified burn-in conditions prior to conducting total dose
radiation testing.
b. The manufacturer shall develop a correction factor (which is acceptable to the parties to the test) taking into account
the changes in total dose response resulting from subjecting product to burn-in. The correction factor shall then be
used to accept product for total dose response without subjecting the test samples to burn-in.
C.4.4.1 End-point tests for group E. End-point measurements and other specified post-test measurements shall be made for
each sample after completion of all other specified tests in the subgroup. The test limits for the end-point measurements shall
be the same as the test limits for the respective group A subgroup inspections. Different end-points may be specified for group
E tests in the detailed specifications. Any additional end-point electrical measurements may be performed at the discretion of
the manufacturer.
C.4.5 In-line TCI testing (option 2). In-line control testing shall be performed through the use of the approved SEC or QML
microcircuit. The following shall be addressed for RHA devices; group E testing shall be performed on the SEC or product
meeting SEC complexity at intervals set by the TRB in the QM plan. Burn-in shall be addressed as per C.4.4 a or C.4.4 b
above.
115
MIL-PRF-38535K
APPENDIX C
TABLE C-I. Group E (RHA) TCI/QCI test for class Q, class V and class Y.
MIL-STD-883 test method and conditions
Minimum sample size quantity (accept no.)
Tests
1/ 2/
Subgroups
Class Q
Class V
Class Y
(class level B)
(class level S)
(class level S)
Subgroup 1
Neutron irradiation test
(Displacement Damage test)
a. Qualification test
3/ 4/
a.TM 1017 at 25°C
2(0) devices/wafer or
5(0) devices/wafer lot or
11(0) devices/inspection lot
5/
a.TM 1017 at 25°C
2(0) devices/wafer or
11(0) devices/wafer lot 6/
a.TM 1017 at 25°C
2(0) devices/wafer or
11(0) devices/wafer lot 6/
b. QCI/TCI test
b. TM 1017 at 25°C
2(0) devices/wafer or
5(0) devices/wafer lot or
11(0) devices/inspection lot
5/
b. TM 1017 at 25°C
2(0) devices/wafer or
11(0) devices/wafer lot 6/
b. TM 1017 at 25°C
2(0) devices/wafer or
11(0) devices/wafer lot 6/
c. Endpoint electrical
parameters test
c. As specified in
accordance with device
specification
c. As specified in
accordance with
device specification
c. As specified in
accordance with
device specification
Subgroup 2
3/ 7/ 9/ 10/
Total ionization dose (TID)
a. Qualification test
a. TM 1019 at 25°C
a.TM 1019 at 25°C
a.TM 1019 at 25°C
maximum supply voltage
2(0) devices/wafer or
5(0) devices/wafer lot or
maximum supply voltage
2(0) devices/wafer or
22(0) devices/wafer lot or
maximum supply voltage
2(0) devices/wafer or
22(0) devices/wafer lot or
1(0) devices/wafer +
22(0) devices/inspection lot 1(0) devices/wafer +
8/
4(0) SEC or test structures/ 4(0) SEC or test structures/
wafer or
wafer or
5(0)devices/wafer lot +
5(0)devices/wafer lot +
4(0) SEC or test structures/ 4(0) SEC or test structures/
wafer
wafer
b. TM 1019 at 25°C
b.TM 1019 at 25°C
b.TM 1019 at 25°C
b. QCI/TCI test
maximum supply voltage
2(0) devices/wafer or
5(0) devices/wafer lot or
maximum supply voltage
2(0) devices/wafer or
22(0) devices/wafer lot or
maximum supply voltage
2(0) devices/wafer or
22(0) devices/wafer lot or
1(0) devices/wafer +
22(0) devices/inspection lot 1(0) devices/wafer +
8/
4(0) SEC or test structures/ 4(0) SEC or test structures/
wafer or
wafer or
5(0)devices/wafer lot +
5(0)devices/wafer lot +
4(0) SEC or test structures/ 4(0) SEC or test structures/
wafer
wafer
c. As specified in
accordance with device
specification
c. As specified in
accordance with device
specification
c. As specified in
accordance with device
specification
c. Endpoint electrical
parameters test
116
MIL-PRF-38535K
APPENDIX C
TABLE C-I. Group E (RHA) TCI/QCI test for class Q, class V and class Y. –continued.
MIL-STD-883 test method and conditions
Minimum sample size quantity (accept no.)
Tests
1/ 2/
Subgroups
Class Q
Class V
Class Y
(class level B)
(class level S)
(class level S)
a. Dose rate upset test
(Transient irradiation test
a. For Digital TM1021
For Linear TM1023
(temperature at 25°C)
2(0) devices/wafer or
11(0) devices/wafer lot
6/
a. For Digital TM1021
For Linear TM1023
(temperature at 25°C)
2(0) devices/wafer or
11(0) devices/wafer lot
6/
a. For Digital TM 1021
For Linear TM1023
(temperature at 25°C)
2(0) devices/wafer or
11(0)devices/inspection lot
5/
Subgroup 3
11/
b. End point electrical
parameters test
b. As specified in
accordance with
device specification
b. As specified in
accordance with
device specification
b. As specified in
accordance with
device specification
Subgroup 4
Radiation dose rate
induced latch-up test
TM 1020
As specified in the
device specification
TM 1020
As specified in the
device specification
TM 1020
As specified in the
device specification
12/
Subgroup 5
Single event effects (SEE)
test
ASTM F-1192 or JESD57
4(0) devices or
As specified in the
device specification
ASTM F-1192 or JESD57
4(0) devices or
As specified in the
device specification
13/
Note: The screening and QCI/TCI tables from MIL-PRF-38535 and MIL-STD-883 Test Methods 5004 and 5005 have been
combined for consistency. A future revision of MIL-STD-883 will reflect this change as well. Manufacturers shall document in
their QM plan the screening and QCI/TCI requirements to either MIL-PRF-38535 or MIL-STD-883.
1/ Group E tests may be performed prior to device screening. Parts used for one subgroup test may not be used for other subgroups
but may be used for higher levels in the same subgroup. End point electrical parameters as specified in accordance with device
specification.
2/ For devices with solder terminations, group E subgroups test may be performed without balls and columns.
3/ The radiation hardness assurance capability level (RHACL)/radiation assurance in the SPEC level is the ratio of the capability level
to the specification level of devices fluence. Subgroups shall be invoked when the radiation hardness assurance capability level
(RHACL) specification requirements of > 10 are not met. For an example, if RHACL/SPEC ratio is > 10 then this test may not be
required, but if the RHACL/SPEC ratio falls within > 1 and ≤ 10 then the subgroup test is required.
4/ This test is to be conducted only when specified in the purchase order or contract. Neutron irradiation test (Displacement damage
test) is not required for MOS devices unless bipolar elements are included by design.
117
MIL-PRF-38535K
APPENDIX C
TABLE C-I. Group E (RHA) TCI/QCI test for class Q, class V and class Y. –continued.
5/ In accordance with inspection lot. If one part fails, seven additional parts may be added to the test sample with no additional failures
allowed, 18(1).
6/ In accordance with wafer lot. If one part fails, seven additional parts may be added to the test sample with no additional failures
allowed, 18(1).
7/ Parts used for one subgroup test may not be used for other subgroups, but may be used for higher levels in the same subgroup.
For subgroup 2, total dose exposure shall not be considered cumulative unless testing is performed within the time limits of the test
method.
8/ In accordance with inspection lot. If one part fails, 16 additional parts may be added to the test sample with no additional failures
allowed, 38(1).
9/ Traceability to the specific wafer is required.
10/ In accordance with wafer for device types with greater than or equal to 4,000 equivalent transistors/chip selected from the wafer.
The manufacturer shall define and document sampling procedures. The test structures shall be randomly selected from the wafer.
An X-ray source may be used on test structures at the wafer level provided correlation has been established between the X-ray and
the Cobalt-60 source and shall be documented in the QM plan.
11/ Radiation dose rate upset (Transient irradiation test) test shall be conducted during qualification on first QCI when
specified in purchase order or contract.
12/ Radiation dose rate induced latch-up screen test shall be conducted when specified in purchase order or contract. Dose rate
induced latch-up screen test is not required when radiation induced latch-up is verified to be not possible such as SOI, SOS and
dielectrically isolated technology devices. If radiation dose rate induced latch-up screen test is required, shall be performed
screening operation after seal. Test conditions, temperature, and the electrical parameters to be measured pre, post, and during the
test in accordance with the specified device specification. The PDA for each inspection lot for class V or class Y (class level S)
devices sublot, screened, shall be 5 percent or one device, whichever is greater.
13/ When single event effects (SEE) testing is specified in the purchase order or contract, the SEE test shall be performed during initial
qualification and after any design or process change that may affect SEE response. Destructive SEE (SEB and SEGR) testing shall
be performed accordance with JEDEC standard JESD57.
118
MIL-PRF-38535K
APPENDIX C
C.5 NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
C.5.1 Additional reference documents. The documents in this section may be used as guidelines for the development of a
hardness assurance program and are not mandatory for this specification.
MIL-PRF-38534
MIL-HDBK-816
MIL-HDBK-817
MIL-HDBK-1547
SD-18
- Hybrid Microcircuits, General Specification for.
- Guidelines for Developing Radiation Hardness Assurance Device Specifications.
- System Development Radiation Hardness Assurance.
- Electronic Parts, Materials, and Processes for Space and Launch Vehicles.
- Defense Standardization Guide for Part Requirements and Applications.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
ASTM INTERNATIONAL (ASTM)
ASTM E666
ASTM E668
- Standard Practice for Calculating Absorbed Dose from Gamma or X Radiation.
- Standard Practice for Application of Thermo Luminescence-Dosimetry (TLD) Systems for
Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices.
- Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits.
- Measuring Dose Rate Response of Linear Integrated Circuits (Metric).
ASTM F744
ASTM F773
(Copies of these documents are available online at http://www.astm.org/ or from ASTM International, 100 Barr
Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.)
119
MIL-PRF-38535K
APPENDIX C
(This page intentionally left blank.)
120
MIL-PRF-38535K
APPENDIX D
STATISTICAL SAMPLING, TEST, AND INSPECTION PROCEDURES
D.1 SCOPE
D.1.1 Scope. This appendix contains statistical sampling, life test, and qualification procedures used with
microcircuits. This appendix is a mandatory part of the specification. The information contained herein is intended
for compliance.
D.2 APPLICABLE DOCUMENTS
(This section is not applicable to this appendix.)
D.3 REQUIREMENTS
D.3.1 Definitions. The following definitions shall apply for all statistical sampling procedures:
a. Sample size series: The sample size series is defined as the following decreasing series of values: 50, 30,
20, 15, 10, 7, 5, 3, 2, 1.5, 1, 0.7, 0.5, 0.3, 0.2, 0.15, and 0.1.
b. Tightened inspection: Tightened inspection is defined as inspection performed using the next sample size
value in the sample size series lower than that specified.
c. Acceptance number (c): The acceptance number is defined as an integral number associated with the
selected sample size which determines the maximum number of defectives permitted for that sample size.
d. Rejection number (r): Rejection number is defined as one plus the acceptance number.
D.3.2 Symbols. The following symbols shall apply for all statistical sampling procedures:
a. Acceptance number (c).
b. Rejection number (r).
D.4 STATISTICAL SAMPLING PROCEDURES AND TABLE
D.4.1 General. Statistical sampling shall be conducted using the sample size method. The sample size method
as specified herein is a sampling plan which provides a high degree of assurance that a lot having a percent defective
greater than or equal to the specified sample size value shall not be accepted. The procedures specified herein are
suitable for all quality conformance requirements.
D.4.1.1 Selection of samples. Samples shall be randomly selected from the inspection lot or inspection sublots.
For continuous production, the manufacturer, at their option, may select the sample in a regular periodic manner
during manufacture provided the lot meets the formation of lots requirement.
D.4.1.2 Failures. Failure of a unit for one or more tests of a subgroup shall be charged as a single failure.
D.4.2 Single-lot sampling method. Quality conformance inspection information (sample sizes and number of
observed defectives) shall be accumulated from a single inspection lot to demonstrate conformance to the individual
subgroup criteria.
121
MIL-PRF-38535K
APPENDIX D
D.4.2.1 Sample size. The sample size for each subgroup shall be determined from table D-I or D-II and shall meet
the specified sample size series. The manufacturer may, at their option, select a sample size greater than that
required; however, the number of failures permitted shall not exceed the acceptance number associated with the
chosen sample size in table D-I or D-II. In table D-II, the sample size series column to be used for sample size
determination shall be that given in the lot size column which is nearest in value of the actual size of the submitted lot,
except that if the actual lot size is midway between two of the lot sizes given in the table, either of the bounding lot
size columns may be used at the manufacturer's option. If, in table D-II, the appropriate lot size column does not
contain a sample size series value equal to or less than the specified sample size series value, 100 percent
inspection shall be used. In table D-II, the sample size series value in the appropriate lot size column that is
numerically closest to the specified sample size series value shall be used to determine the sample size.
D.4.2.2 Acceptance procedure. For the first sampling, an acceptance number shall be chosen and the associated
number of sample devices for the specified sample series selected and tested (see D.4.2.1). If the observed number
of defectives from the first sample is less than or equal to the preselected acceptance number, the lot shall be
accepted. If the observed number of defectives exceeds the preselected acceptance number, an additional sample
may be chosen such that the total sample complies with D.4.2.3. The table (D-I or D-II), which is used for the first
sampling of a given inspection lot for a given subgroup shall be used for any and all subsequent samplings for the
same lot and subgroup for each lot submission.
D.4.2.3 Additional sample. The manufacturer may add an additional quantity to the initial sample, but this may be
done only once for any subgroup and is limited to the initial sample (e.g., does not apply to resubmitted lots after
initial failure). The added samples shall be subjected to all the tests within the subgroup. The total sample size
(initial and added samples) shall be determined by the new acceptance number selected from table D-I or D-II).
D.4.2.4 Multiple criteria. When one sample is used for more than one acceptance criterion, the entire sample for a
subgroup shall be used for all criteria within the subgroup. In table D-I, the acceptance number shall be that one
associated with the largest sample size in the appropriate sample size series column which is less than or equal to
the sample size used. In table D-II, the acceptance number shall be that one associated with the specified samples
size series, in the appropriate lot size column, for the sample size used.
D.4.2.5 One hundred percent inspection. Inspection of 100 percent of the lot shall be allowed, at the option of the
manufacturer, for any or all subgroups other than those which are called "destructive". If the observed percent
defective for the inspection lot exceeds the specified samples size series value, the lot shall be considered to have
failed the appropriate subgroup(s). Resubmission of lots tested on a 100 percent inspection basis shall also be on a
100 percent inspection basis only and in accordance with the tightened inspection sample series value and other
requirements of A.4.3.3.1.
D.4.2.6 Tightened inspection. Tightened inspection shall be performed by testing to the criteria of the next sample
size series value lower than that specified in the series 1, 1.5, 2, 3, 5, and 7 times 10n, where n is an integral number.
122
TABLE D-I. Sample size series (SSS) sampling plan. 1/ 2/ 3/
Percent defective
allowable (PDA) /
Sample size series
50
30
8
20
11
15
10
7
5
3
2
1.5
1
0.7
0.5
0.3
0.2
0.15
0.1
Acceptance
number (C) (r = c + 1)
Minimum sample sizes
(For device-hours required for life test, multiply by 1000)
0
5
15 22 32 45 76 116
153
231
328
461
767
1152
1534
2303
(1.03)
(0.64) (0.46) (0.34) (0.23) (0.16) (0.11) (0.07) (0.04) (0.03)
(0.02)
(0.02)
(0.01) (0.007) (0.005) (0.003) (0.002)
1
8
13
18
25
38
55
77
129
195
258
390
555
778
1296
1946
2592
3891
(4.4)
(2.7)
(2.0)
(1.4)
(0.94) (0.65) (0.46) (0.28) (0.18) (0.14)
(0.09)
(0.06)
(0.45) (0.027) (0.018) (0.013) (0.009)
2
11
18
25
34
52
75
105
176
266
354
533
759
1065 1773 2662 3547 5323
(0.080) (0.045) (0.031) (0.022) (0.015)
1337 2226 3341 4452 6681
(0.10) (0.062) (0.041) (0.031) (0.018)
1599 2663 3997 5327 7994
(0.12) (0.074) (0.049) (0.037) (0.025)
1855 3090 4638 6181 9275
(0.14) (0.085) (0.056) (0.042) (0.028)
2107 3509 5267 7019 10533
(0.155) (0.093) (0.062) (0.047) (0.031)
2355 3922 5886 7845 11771
(0.17) (0.101) (0.067) (0.051) (0.034)
2599 4329 6498 8660 12995
(0.18) (0.108) (0.072) (0.054) (0.036)
2842 4733 7103 9468 14206
(0.19) (0.114) (0.077) (0.057) (0.038)
3082 5133 7704 10268 15407
(0.20) (0.120) (0.080) (0.060) (0.040)
(7.4)
(4.5)
(3.4)
(2.24)
(1.6)
(1.1)
(0.78) (0.46) (0.31) (0.23)
132 221 333 444
(1.0) (0.62) (0.41) (0.31)
158 265 398 531
(1.3) (0.75) (0.50) (0.37)
184 308 462 617
(1.4) (0.85) (0.57) (0.42)
209 349 528 700
(1.6) (0.94) (0.62) (0.47)
(0.15)
(7.59)
3
13
22
32
43
65
94
668
953
(10.5)
(6.2)
(4.4)
(3.2)
(2.1)
(1.5)
(0.20)
(0.14)
4
16
27
38
52
78
113
798
1140
(12.3)
(7.3)
(5.3)
(3.9)
(2.6)
(1.8)
(0.25)
(0.17)
5
19
31
45
60
91
131
927
1323
(13.6)
(8.4)
(6.0)
(4.4)
(2.9)
(2.0)
(0.28)
(0.20)
6
21
35
51
68
104
149
1054
1503
(15.6)
(9.4)
(6.6)
(4.9)
(3.2)
(2.2)
(0.31)
(0.22)
7
24
39
51
77
116
166
234
390
589
783
1178
1680
(16.6)
(10.2)
(7.2)
(5.3)
(3.5)
(2.4)
(1.7)
(1.0)
(0.67) (0.51)
(0.34)
(0.24)
8
26
43
63
85
128
184
258
431
648 864
(0.72) (0.54)
709 945
(0.77) (0.58)
770 1025
(0.80) (0.60)
832 1109
(0.83) (0.62)
890 1187
(0.86) (0.65)
948 1264
(0.89) (0.67)
1007 1343
(0.92) (0.69)
1086 1422
1300
1854
(18.1)
(10.9)
(7.7)
(5.6)
(3.7)
(2.6)
(1.8)
(1.1)
(0.36)
(0.25)
9
28
47
69
93
140
201
282
471
1421
2027
(19.4)
(11.5)
(8.1)
(6.0)
(3.9)
(2.7)
(1.9)
(1.2)
(0.38)
(0.27)
10
11
12
13
14
15
16
17
18
19
20
25
31
51
75
100
152
218
306
511
1541
2199
(19.9)
(12.1)
(8.4)
(6.3)
(4.1)
(2.9)
(2.0)
(1.2)
(0.40)
(0.28)
33
54
83
111
166
238
332
555
1664
2378
3323
5546
8319
11092 16638
(21.0)
(12.8)
(8.3)
(6.2)
(4.2)
(2.9)
(2.1)
(1.2)
(0.42)
(0.29)
(0.21)
(0.12) (0.083) (0.062) (0.042)
36
59
89
119
178
254
356
594
1781
2544
3562
5936 9804 11872 17808
(0.13) (0.086) (0.065) (0.043)
6321 9482 12643 18964
(21.4)
(13.0)
(8.6)
(6.5)
(4.3)
(3.0)
(2.2)
(1.3)
(0.43)
(0.3)
(0.22)
38
63
95
126
190
271
379
632
1896
2709
3793
(22.3)
(13.4)
(8.9)
(6.7)
(4.5)
(3.1)
(2.26) (1.3)
(0.44)
(0.31)
(0.22) (0.134) (0.089) (0.067) (0.045)
40
67
101
134
201
288
403
672
2015
2878
4029
6716
10073 13431 20146
(23.1)
(13.8)
(9.2)
(6.9)
(4.6)
(3.2)
(2.3)
(1.4)
(0.46)
(0.32)
(0.23) (0.138) (0.092) (0.069) (0.046)
43
71
107
142
213
305
426
711
2133
3046
4265 7108 10662 14216 21324
(0.235) (0.141) (0.094) (0.070) (0.047)
4497 7496 11244 14992 22487
(23.3)
(14.1)
(9.4)
(7.1)
(4.7)
(3.3)
(2.36) (1.41) (0.94) (0.71)
(0.46)
(0.33)
45
74
112
150
225
321
450
750
1124
1499
2249
3212
(24.1)
(14.6)
(9.7)
(7.2)
(4.8)
(3.37) (2.41) (1.44) (0.96) (0.72)
(0.48)
(0.337) (0.241) (0.144) (0.096) (0.072) (0.048)
47
79
118
158
236
338
473
788
1182
1576
2364
3377
4728
7880
11819 15759 23639
(24.7)
(14.7) (9.86) (7.36) (4.93) (3.44) (2.46) (1.48) (0.98) (0.74)
(0.49)
(0.344) (0.246) (0.148) (0.098) (0.074) (0.049)
50
83
124
165
248
354
496
826
1239
1652
2478
3540 4956 8260 12390 16520 24780
(0.351) (0.251) (0.151) (0.100) (0.075) (0.050)
3702 5183 8638 12957 17276 25914
(0.358) (0.256) (0.153) (0.102) (0.077) (0.051)
3864 5410 9017 13526 18034 27051
(0.364) (0.260) (0.156) (0.104) (0.078) (0.052)
4656 6518 10863 16295 21726 32589
(24.9)
(15.0) (10.0) (7.54) (5.02) (3.51) (4.96) (1.5)
(1.0)
(0.75)
(0.50)
52
86 130 173 259 370 518 864
1296
1728
2591
(25.5)
(15.4) (10.2) (7.76) (5.12) (3.58) (2.56) (1.53) (1.02) (0.77)
(0.52)
54
90
(15.6) (10.4) (7.82) (5.19) (3.65) (2.60) (1.56) (1.04) (0.78)
109 163 217 326 466 652 1086 1629 2173
135
180
271
386
541
902
1353
1803
2705
(26.1)
(0.52)
65
3259
(27.0)
(16.1) (10.8) (8.08) (5.38) (3.76) (2.69) (1.61) (1.08) (0.807) (0.538) (0.376) (0.269) (0.161) (0.108) (0.081) (0.054)
1/ Sample sizes are based upon the Poisson exponential binomial limit.
2/ The minimum quality (approximate acceptable quality level (AQL)) required to accept (on the average) 19 of 20 lots is shown in parenthesis for information only.
3/ Minimum size of sample to be tested to assure with a 90 percent confidence that a lot having percent-defective equal to the specified sample size series value will not be accepted (single sample).
TABLE D-II. Hypergeometric sampling plans for small homogenous lot sizes of 200 or less.
(N = lot size, n = sample size, c = acceptance number).
C = 0
N
10
20
30
40
50
60
80
100
120
150
160
200
n
AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS
AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS
2
2.2
1.2
1.0
0.5
85
36
29
15
2.5
1.2
1.0
0.6
0.4
86
40
34
20
15
2.5
1.2
1.0
0.6
0.5
67
42
34
22
17
2.5
1.2
1.0
0.6
0.5
67
42
35
23
19
2.5
1.3
1.0
0.6
0.5
67
42
35
23
19
2.5
1.3
1.0
0.6
0.5
68
43
35
23
19
2.5
1.3
1.0
0.6
0.5
68
43
36
24
20
2.5
1.3
1.0
0.7
0.5
68
43
36
24
20
2.5
1.3
1.0
0.7
0.5
68
43
37
24
20
2.5
1.3
1.0
0.7
0.5
68
43
37
24
20
2.5
1.3
1.0
0.7
0.5
68
44
37
24
20
2.5
1.3
1.0
0.7
0.5
68
44
37
25
20
4
5
8
10
16
20
25
32
40
0.2
6.9
0.25 10
0.2 6.8
0.15 4.3
0.25 11
0.2 8.0
0.15 3.7
0.1 3.7
0.3
11
0.3 12
0.25 9.0
0.2 6.9
0.1 5.0
0.1 3.4
0.3
12
0.3
13
0.3
13
0.3
13
0.3
13
0.3
13
0.25 8.7
0.25 9.4
0.25 10
0.25 10
0.25 10
0.25 10
0.25 11
0.2
0.1
0.1
6.4
4.4
3.0
0.2
0.1
0.1
7.4
5.5
4.0
0.2
0.1
0.1
0.10 3.3
0.08 2.2
0.07 1.5
7.5
5.9
4.5
0.2
7.6
0.2
0.15 6.2
0.1 4.9
0.10 3.7
0.06 2.7
0.07 2.0
0.05 1.5
0.04 0.8
7.7
0.2
7.8 0.2
7.9
0.15 6.0
0.15 6.3 0.15 6.3
0.1
0.1
4.6
3.5
0.1
0.1
5.0 0.1
3.7 0.10 3.9
5.0
50
64
0.1 2.3
0.1
2.9
0.08 1.7
0.06 2.5
0.07 1.7
0.05 1.1
0.06 2.8 0.06 2.9
0.07 2.1 0.07 2.2
0.05 1.5 0.05 1.7
0.04 0.9 0.04 1.2
80
100
125
128
160
0.04 0.8
0.04 0.9 0.04 1.1
0.03 0.7
C = 1
N
n
10
20
30
40
50
60
80
100
120
150
160
200
AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS
AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS
2
27
15
13
11
95
62
51
28
24
12
10
95
66
55
24
12
95
66
23
11
95
67
23
11
95
67
23
10
95
67
23
10
95
67
23
10
95
67
23
10
95
67
22
9.8
95
67
22
95
22
95
4
9.7 67
7.5 58
4.2 40
3.3 33
9.7 68
7.5 58
4.2 40
3.3 33
5
8.8 56
6.2 38
5.0 30
8.5 57
5.8 38
4.6 31
8.4 57
5.4 39
4.2 32
8.1 58
5.0 39
4.2 22
7.9 58
4.7 39
4.2 32
7.6 58
4.5 39
3.9 32
7.5 58
4.3 39
3.5 33
7.5 58
4.3 40
3.3 33
8
7.2 35
6.2 30
10
16
20
25
32
40
5.6 15
4.2
4.0
3.8
18
13
9.2
3.8
3.2
3.1
3.1
18
15
11
7.4
3.4
2.8
2.5
2.4
2.4
20
16
12
8.2
5.9
3.0
2.5
2.2
2.1
2.1
20
16
13
9.0
6.8
2.9
2.4
2.0
1.8
1.6
21
16
13
9.9
7.8
2.6
2.3
1.8
1.6
1.4
21
16
13
10
7.8
2.5
2.1
1.7
1.5
1.3
21
17
13
2.3
2.0
1.6
21
17
14
11
8.3
2.3
2.0
1.6
1.3
1.2
22
17
14
11
8.4
2.2
2.0
1.6
1.3
1.1
22
18
14
11
8.6
10.5 1.4
8.2
1.2
50
64
1.7
4.6
1.4
1.3
5.6
3.8
1.2
1.1
1.1
6.1
4.4
3.0
1.2
1.0
1.0
0.9
6.4
4.7
3.4
2.5
1.0
0.8
0.8
0.7
0.7
6.5
5.0
3.7
2.8
1.9
0.9
0.8
0.7
0.7
0.7
6.7 0.9
5.0 0.7
3.8 0.6
2.8 0.6
2.0 0.5
6.7
5.2
4.0
3.0
2.2
80
100
125
128
160
0.7
1.7
0.7
1.9 0.5
0.5
2.2
1.5
C = 2
N
n
10
20
30
40
50
60
80
100
120
150
160
200
AQL SSS AQL SSS AQL SSS
AQL SSS AQL SSS
AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS AQL SSS
4
33
27
22
82
69
42
28
23
15
13
83
73
49
39
27
21
14
11
84
74
49
42
27
20
13
11
85
74
52
42
27
20
13
10
85
74
52
43
26
20
13
10
85
75
52
43
26
20
12
85
75
53
26
19
12
86
75
53
26
19
12
86
75
53
25
19
11
86
75
53
25
19
11
86
75
53
25
19
11
86
75
53
5
8
10
9.6 43
9.2 44
9.1 44
8.9 44
8.9 44
8.7 44
16
20
25
32
40
11
12
8.6
7.7
7.4
25
19
13
6.9
6.2
6.0
5.5
27
21
16
11
6.8
5.9
4.9
4.8
4.6
27
22
17
12
8.9
6.4
5.6
4.5
4.3
3.9
27
22
17
13
9.8
6.0
5.1
4.3
3.6
3.1
28
23
18
14
11
6.0
4.8
4.1
3.4
2.8
29
23
18
14
12
5.9
4.8
3.9
3.2
2.6
29
23
18
14
12
5.9
4.6
3.7
3.0
2.4
29
23
18
5.7
4.5
3.7
29
24
19
15
12
5.5
4.5
3.7
2.9
2.3
30
24
19
15
12
14.5 3.0
12
2.4
50
64
3.5
6.9
2.8
2.6
8.1
5.7
2.4
2.2
2.1
8.4
6.2
4.5
2.3
2.0
1.8
1.8
8.6
6.6
4.9
3.5
2.1
1.8
1.6
1.4
1.4
9.0
7.1
5.4
3.9
2.8
2.1
1.7
1.5
1.4
1.3
9.3 2.0
7.1 1.6
5.4 1.4
4.0 1.2
2.9 1.1
9.5
7.4
5.6
4.4
3.3
80
100
125
128
160
1.4
2.6
1.3
2.9 1.1
1.1
2.2
2.3
MIL-PRF-38535K
APPENDIX D
TABLE D-II. Hypergeometric sampling plans for small homogenous lot sizes of 200 or less. - Continued.
Table D-II gives the acceptable quality level (AQL) and sample size series (SSS) values associated with certain
single sampling plans (acceptance number, sample size, and lot size). The table has the following features:
a. Calculations are based upon the hypergeometric distribution (exact theory) for lot sizes 200 or less.
b. The AQL of a sampling plan is defined as the interpolated percent defective for which there is a 0.95 probability
of acceptance under the plan. The AQL so defined need not be a realizable lot percent defective for the lot size
involved (e.g., 12 percent is not a realizable percent defective for a lot size of 20).
c. The sample size series of a sampling plan is defined as the interpolated percent defective for which there is a
0.10 probability of lot acceptance under the plan. The sample size series value so defined need not be a
realizable lot percent defective for the lot size involved.
d. The sequence of sample sizes and lot sizes are generated by taking products of preceding numbers in the
respective sequences.
125
MIL-PRF-38535K
APPENDIX D
(This page intentionally left blank.)
126
MIL-PRF-38535K
APPENDIX E
PROVISIONS GOVERNING THE CERTIFICATION AND QUALIFICATION OF OFFSHORE PROCESSES
(This appendix has been deleted in its entirety.)
127
MIL-PRF-38535K
APPENDIX E
(This page intentionally left blank.)
128
MIL-PRF-38535K
APPENDIX F
GENERAL PROVISIONS FOR TAPE AUTOMATED BONDED MICROCIRCUITS
F.1 SCOPE
F.1.1 Scope. This appendix contains provisions for tape automated bonded (TAB) microcircuits. It provides
design guidelines, in-process controls, screening and technology conformance inspection (TCI) requirements, and
general manufacturing guidelines in order to produce a compliant TAB microcircuit. It is intended for use in
conjunction with a manufacturer's compliancy program. This appendix is a mandatory part of the specification. The
information contained herein is intended for compliance. However, for QML microcircuits the manufacturers may
offer approved alternatives that demonstrate a process control system that achieves at least the same level of quality
and reliability as could be achieved by this appendix.
F.2 APPLICABLE DOCUMENTS
F.2.1 General. The documents listed in this section are specified in sections F.3 or F.4 of this appendix. This
section does not include documents cited in other sections of this appendix or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections F.3 and F.4 of this
appendix, whether or not they are listed.
F.2.2 Government documents.
F.2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
- Test Method Standard Microcircuits.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
F.2.3 Non-Government publications. The following documents form a part of this document to the extent specified
herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JESD22-A101
JESD22-A112
J-STD-020D.01
- Steady-State Temperature Humidity Bias Life Test.
- Moisture-Induced Stress Sensitivity for Plastic Surface Mount Devices.
- Joint IPC/JEDEC Standard for Moisture/Reflow Sensitivity Classification For
Nonhermetic Solid State Surface Mount Devices.
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)
(Non-Government standards and other publications are normally available from the organizations that prepare or
distribute the documents. These documents also may be available in or through libraries or other informational
services.)
F.2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein (except for related specification sheets), the text of this
document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless
a specific exemption has been obtained.
129
MIL-PRF-38535K
APPENDIX F
F.3 REQUIREMENTS
F.3.1 Marking. Marking shall be in accordance with the device specification and in an appropriate medium. The
following should be used as guidance: Marking may be in ink, laser marked or etched in the copper of the lead frame
tape. Ink-marking may be performed before or after burn-in. Ink-marked parts shall be subjected to resistance to
solvents (TM 2015 of MIL-STD-883, (see F.4.7.2.1 herein)). In either the ink-marked or tape design case, the
following should be included on each device:
a. On the excised portion of the tape (that portion which remains with the microcircuit):
(1) Name of manufacturer or Commercial and Government Entity (CAGE) code.
(2) Inspection lot date code (determined by the date of final assembly operation, such as date of
encapsulation or date of bonding operation).
b. The following should also be marked on each device, but location may be on the non-excised portion of
the tape, the individual device carrier, or the excised portion of the tape at the manufacturers option:
(1) Part or identifying number (PIN).
(2) Electrostatic discharge (ESD) identifier.
(3) Compliance indicator or certification, whichever is applicable.
(4) Serialization, if applicable.
F.3.2 Process monitors. The applicable process monitors of A.3.4.1.2 shall be performed. The quality assurance
provisions described below within this appendix shall be used to address some of these process monitors.
F.3.3 Lead finish. Lead finish shall be gold, designated a "C", unless otherwise specified in the device
specification.
F.3.4 Item requirements. The individual item requirements for TAB microcircuits delivered under this appendix
shall be documented in the device specification prepared in accordance with 3.5 of this specification.
130
MIL-PRF-38535K
APPENDIX F
F.4 VERIFICATION
F.4.1 General operation flow. The following represents the general operational flow that TAB microcircuits follow.
Reference paragraph
F.4.6.1
F.4.3
Operation
Internal visual (optional)
Bump (100 percent)
F.4.3.1
F.4.4.1
F.4.4.2
F.4.6.2
F.4.5
Bump visual
Bond process characterization (100 percent)
Visual inspection of bond Visual
Internal visual (100 percent)
Encapsulant (optional)
F.4.5.1
F.4.6.3
F.3.1
Encapsulant visual
Temperature cycle (100 percent)
Mark (100 percent)
F.4.6.4
F.4.6.4
F.4.6.4
F.4.6.5
F.4.6.6
F.4.7
Pre burn-in electrical (optional)
Burn-in (100 percent)
Post burn-in electrical (100 percent)
PDA
External visual (100 percent)
Quality conformance inspection
F.4.2 Tape. Procurement of tape shall be baselined by the manufacturer to include the following items F.4.2 a
through F.4.2 f. Items e and f shall be sampled on a frequency basis necessary to demonstrate process control.
a. Design configuration.
b. Tape composition.
c. Coefficient of thermal expansion.
d. Test for delamination of layers.
e. Plating thickness and composition.
f. Dimensions (lead, terminal, external, and window).
F.4.3 Bump. The bump process shall be baselined by the manufacturer to include the following items F.4.3a
through F.4.3j. Items F.4.3f through F.4.3j shall be sampled on a frequency basis necessary to demonstrate process
control.
a. Minimum glassivation overlap.
b. Barrier metal system - deposition, composition.
c. Step coverage (bump to glassivation).
d. Design configuration.
e. Thickness of barrier metal.
f. Thickness of bump.
g. Hardness.
h. Bump height uniformity.
i. Bump shear.
j. Bath purity.
131
MIL-PRF-38535K
APPENDIX F
F.4.3.1 Visual examination of bump. Visual examination of the bump is required prior to bond. Sample size and
accept/reject limits shall be documented and determined by the manufacturer, and, at a minimum, address the
following areas:
a. Alignment of bump to pad.
b. Contaminants, conductive residue.
c. Bleeding bump (metallization exposed to higher than normal temperature excursions).
d. Ineffective or improper photoresist application or removal.
e. Cracks, voids.
f. Partial or missing bumps.
g. Nodules or malformed bumps.
h. Discolored bumps.
I. Mechanically damaged bumps.
F.4.4 Bond. Bond requirements shall be as specified in F.4.4.1 through F.4.4.2 inclusive.
F.4.4.1 Bond process characterization. Process characterization of inner lead bond (ILB) is critical to the quality
and reliability of a TAB device and shall be performed and documented to ascertain the minimum, maximum, and
mean destructive bond pull limits to meet the requirements set forth herein. During the process characterization the
following factors shall be considered and included as appropriate:
a. Tape composition.
b. Bond force.
c. Bond temperature.
d. Bond pressure.
e. Underlying layers such as:
(1) Bump configuration.
(2) Glassivation composition.
(3) Bond pad opening.
f. Any underlying metallization and passivation.
g. Cracking (the manufacturer shall evaluate the significance of any cracking throughout the device including
around and below the bump area).
132
MIL-PRF-38535K
APPENDIX F
F.4.4.2 Visual inspection of bond. Visual inspection of bond is required prior to encapsulation. Sample size and
accept/reject limits shall be documented and determined by the manufacturer, and, at a minimum, shall include the
following criteria:
a. ILB lead to bump alignment.
b. Lead contact length; bond lead contact length (L) shall be greater than the lead width (W). (See figure F-1.)
c. Lead side edge overhang shall be evaluated.
d. No open/lifted, peeling, or missing leads.
e. No visual shorts.
f. Cracks in bumps, thin film gold bump pad, glassivation, metal, or active area adjacent to the inner lead bond
bumps shall not exceed the characterization requirements in F.4.4.1.
g. For single point bonds, the tool impression shall cover 100 percent of the lead to bump contact
width.
h. For alloy bonds, fillet shall be visible on at least one side of the lead continuously across the bump.
F.4.5 Encapsulant. The following items a - h, as a minimum, shall be baselined by the manufacturer, and items
g - h shall be sampled on a frequency basis necessary to demonstrate process control.
a. Coefficient of thermal expansion and relationship to underlying layers.
b. Presence of volatile components.
c. Gel time and temperature.
d. Cure profile (initial, ramp, and final): Time and temperature.
e. Final properties of cured polymer.
f.
Storage of encapsulant.
g. Thickness.
h. Viscosity.
133
MIL-PRF-38535K
APPENDIX F
F.4.5.1 Visual examination of encapsulant. Visual inspection of the applied encapsulant post-cure is required.
Sample size and accept/reject limits shall be documented and determined by the manufacturer, and, at a minimum,
address the following areas:
a. Cracks.
b. Voids.
c. Lack of interfacial adhesion.
d. Poor uniformity.
e. Stress on underlying layers.
f.
Coverage of desired area.
F.4.6 Screening. One hundred percent screening shall be performed in accordance with TM 5004 of
MIL-STD-883, with the following deletions and additions:
F.4.6.1 Optional internal visual. An optional internal visual examination may be performed prior to bump utilizing
applicable criteria within TM 2010 of MIL-STD-883 or manufacturer's internal criteria in order to screen die defects.
Sample size and accept/reject criteria shall be determined and documented by the manufacturer.
F.4.6.2 Internal visual screen. One hundred percent internal visual examination shall be performed prior to
encapsulant utilizing applicable criteria within TM 2010 of MIL-STD-883 to screen die defects. At the manufacturer's
option, bump visual and ILB visual may be combined with this internal visual examination provided 100 percent of the
product is examined.
F.4.6.3 Temperature cycle. One hundred percent temperature cycle shall be performed in accordance with TM
1010 of MIL-STD-883, test condition C.
F.4.6.4 Burn-in. One hundred percent pre, interim, and post burn-in electrical test shall be performed in
accordance with the device specification. One hundred percent burn-in shall be performed in accordance with TM
1015 of MIL-STD-883.
F.4.6.5 Percent defective allowable (PDA) . PDA shall be calculated in accordance with TM 5004 of MIL-STD-883.
F.4.6.6 External visual. One hundred percent external visual examination shall be performed in accordance with
TM 2009 of MIL-STD-883 or manufacturer's applicable external criteria.
F.4.7 Quality conformance inspection (QCI) . QCI shall be performed in accordance with TM 5005 of
MIL-STD-883 with the following deletions and additions:
F.4.7.1 Group A inspection. Group A inspection shall be in accordance with TM 5005 of MIL-STD-883 and the
applicable device specification.
F.4.7.2 Group B inspection. Group B inspection shall be in accordance with the following:
F.4.7.2.1 Resistance to solvents. Resistance to solvents (TM 2015 of MIL-STD-883) shall be performed when ink
marking is utilized. Sample size shall be in accordance with TM 5005 of MIL-STD-883.
F.4.7.2.2 Attachability. Attachability of the outer lead bond shall be assured as documented in the device
specification and shall include sample size and accept/reject limits.
134
MIL-PRF-38535K
APPENDIX F
F.4.7.2.3 Destructive bond strength. Destructive bond strength (TM 2011 of MIL-STD-883) shall be performed,
prior to encapsulation, on inner lead bonds and may be performed during the assembly operation, prior to burn-in.
Sample size shall be in accordance with TM 5005 of MIL-STD-883. The minimum value of destructive bond strength
shall be documented in the device specification. Defect criteria shall include identification of the site of failure at one
or more of the following areas:
a. Lead lift.
b. Lead break at bump.
c. Lead break away from bump.
d. Lead break at tape window.
e. Metal peels off tape.
f.
Bump delamination from thin film metal.
g. Thin film metal delamination.
h. Crater under bump.
i.
j.
Not bonded.
Error (operator, machine, hook slips, etc.).
F.4.7.2.4 Constant acceleration. Constant acceleration (TM 2001 of MIL-STD-883, test condition E (min), Y1
direction only) shall only be required if documented in the device specification.
F.4.7.3 Group C inspection. Group C inspection shall be performed in accordance with TM 1005 of MIL-STD-883.
Sample size shall be in accordance with table IV herein or TM 5005 of MIL-STD-883. Initial group C test shall be
completed utilizing TAB packaging, while subsequent group C inspections may be performed utilizing alternate
packaging technology.
F.4.7.4 Group D inspection. Group D inspection shall be in accordance with TM 5005 of MIL-STD-883 with the
following deletions and additions:
a. Subgroup 1 of table IV shall be performed as specified.
b. Subgroups 2, 6, 7, and 8 of table IV of TM 5005 shall not be performed.
c. Subgroup 3 of table IV of TM 5005 shall be performed as specified with the exception of moisture
resistance (TM 1004) and seal (TM 1014).
d. Subgroup 4 of table IV of TM 5005 shall be performed as specified with the exception of constant
acceleration (unless specified in the device specification) (TM 2001) and seal (TM 1014).
e. Subgroup 5 of table IV of TM 5005 shall be performed as specified with the exception of seal (TM 1014).
135
MIL-PRF-38535K
APPENDIX F
F.4.7.4.1 Highly accelerated stress testing (HAST). HAST shall be performed in accordance with J-STD-020, and
shall be performed using a sample size number (accept number) of 15(0) for 50 hours at +130°C at 85 percent
relative humidity and a voltage bias applied. As an option, 85/85 testing in accordance with JESD22-A101 shall be
performed using 15(0) sample size (accept number) for 1,000 hours.
F.4.7.4.2 Post-test visual examinations. Post-test visual examinations shall be performed in accordance with
F.4.6.6 of this appendix.
F.4.8 Major changes. Major changes shall be as set forth in MIL-PRF-38535 as applicable. In addition, the
following shall be considered as a major change:
a. Any change to baselined items in this appendix.
b. Bond characterization parameters.
L > W
FIGURE F-1. Lead contact length.
136
MIL-PRF-38535K
APPENDIX G
THE QUALIFIED MANUFACTURERS LISTING PROGRAM
G.1 SCOPE
G.1.1 Scope. The Qualified Manufacturers Listing (QML) program measures and evaluates the manufacturers'
manufacturing process against a baseline for that process. This baseline can include innovative and improved
processes that result in an equivalent or higher quality product, provided that the process used to evaluate and
document these changes has been reviewed and approved. Changes to the process baseline can be made by the
manufacturer's Technology Review Board (TRB) after achieving QML status with documented reliability and quality
data. The approach outlined in this appendix is a proven baseline which contains details of the quality management
(QM) program including the TRB, the QM plan, and change control procedures. This appendix is a mandatory part of
the specification. The information contained herein is intended for compliance. However, for QML microcircuits the
manufacturers may offer approved alternatives that demonstrate a process control system that achieves at least the
same level of quality and reliability as could be achieved by this appendix.
G.2 APPLICABLE DOCUMENTS
G.2.1 General. The documents listed in this section are specified in section G.3 of this appendix. This section
does not include documents cited in other sections of this appendix or recommended for additional information or as
examples. While every effort has been made to ensure the completeness of this list, document users are cautioned
that they must meet all specified requirements of documents cited in section G.3 of this appendix, whether or not they
are listed.
G.2.2 Other Government documents, drawings, and publications. The following other Government documents,
drawings, and publications form a part of this document to the extent specified herein. Unless otherwise specified,
the issues of these documents are those cited in the solicitation or contract.
DSCC-VQC-42
- Baseline Sheet for Microcircuits Materials and Construction.
(Copies of DSCC-VQC-42 are available from DLA Land and Maritime (ATTN: DLA Land and Maritime-VQC),
P.O. Box 3990, Columbus, OH 43218-3990.)
G.2.3 Non-Government publications. The following documents form a part of this document to the extent specified
herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
TechAmerica
EIA557 - Statistical Process Control Systems.
(Copies of these documents are available online at http://www.techamerica.org/ or from TechAmerica,
601 Pennsylvania Ave., NW, North Building, Suite 600, Washington DC 20004-2650.)
G.2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein (except for related specification sheets), the text of this
document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless
a specific exemption has been obtained.
137
MIL-PRF-38535K
APPENDIX G
G.3 REQUIREMENTS. The requirements of the microcircuits are classified in the generic qualification flow
diagram (see figure G-1).
G.3.1 QM program. A quality management program shall be developed and implemented by the manufacturer
and documented in the QM plan (see G.3.3 herein). Also, the manufacturer shall have a self-assessment program
with an evaluation system similar to that posed by the Malcolm Baldridge National Quality Award, and the results of
this assessment shall be made available for review. The manufacturer is encouraged to apply for the Malcolm
Baldridge National Quality Award within 5 years of initial request for QML status.
G.3.2 Manufacturer's review system. The manufacturer’s review system, known as the TRB, is responsible for
development of the QM plan, maintenance of all certified and qualified processes, process change control (see
3.3.4), reliability data analysis, failure analysis, corrective actions, QML microcircuit recall procedures, and
qualification status of the technology.
G.3.2.1 Organizational structure. The manufacturer's TRB should insure communication is established and
maintained among representatives from device design, technology development, wafer fabrication, assembly, testing,
quality assurance and third party organizations. Records of the TRB deliberations and decisions should be
maintained. These records shall be made available to the qualifying activity (QA). The manufacturer shall submit the
name(s) and telephone numbers of their TRB systems' contact person(s) to the QA.
G.3.2.2 TRB duties. The TRB shall keep the QA updated on the status of QML technology and products. The
TRB should have a methodology in place for assessing the current status of the quality and reliability of its
microcircuits by review of the Statistical Process Control (SPC) procedures and QM status of the manufacturer's
process technology, reliability test data (e.g., parametric monitor (PM), Technology Characterization Vehicle (TCV),
Standard Evaluation Circuit (SEC) and device), and the Failure Analysis (FA) results of burn-in/screening failures and
board/assembly failures and field returns, as applicable. A method or procedure to verify correlation between test
structures and actual product should be approved by the TRB. The TRB shall maintain records, available for QA
review, of conditions found and the action taken. The TRB is required to report periodically to the QA on the status of
the QML technology and products (see G.3.2.3 herein). The TRB should also address the impact of key
managerial/TRB personnel changes and business plans in order to evaluate any impact they may have on the QML
system.
When the reliability data indicates corrective action is required, the TRB should determine and implement the
appropriate action in a timely manner. The SEC and TCV (see G.3.3f herein) data are to be used as a tool for
monitoring the quality and reliability of the manufacturer's line and do not automatically disqualify a manufacturer
when trends or limits require corrective action.
When reliability of shipped microcircuits is called into question, the TRB should provide evaluation and corrective
action and prompt notification to the QA to preserve the manufacturer's qualified status and assure that defective
product is not shipped.
138
MIL-PRF-38535K
APPENDIX G
FIGURE G-1. Generic qualification flow diagram.
139
MIL-PRF-38535K
APPENDIX G
G.3.2.2.1 QML certification and qualification test plan (see G.3.3g). Before a management and technology
validation is scheduled, the manufacturer should submit to the QA a TRB approved test plan with milestone charts
outlining the tests to be used to certify processes and the tests and devices to be used to qualify the certified
processes to the requirements of 3.4.1. The TRB shall determine the tests to be accomplished on the TCV, SEC,
and parametric monitor and submit to the QA a test plan with parametric limits and accept and reject criteria.
G.3.2.3 Status report. The manufacturer's TRB shall submit a status report to the QA describing the health of the
QML manufacturer's line including all changes and the criticality of the changes in microcircuit quality, reliability,
performance, and interchangeability. The manufacturer should retain the support test data. The QA can request to
review the supporting data. The following areas should be addressed in each status report: (The information in the
status report may be addressed in various ways, such as, copies of TRB meeting minutes, summary of major actions,
etc.)
a. Field returns and corrective actions.
b. SPC and continuous improvement program update (e.g., defect density summary, in-process reliability
monitors, Capability Index of process center (Cpk) programs, etc.).
c. SEC and TCV test data summary, including radiation data if applicable.
d. Design facility.
e. Fabrication line.
f. Assembly facility.
g. Test facility.
h. Major changes.
i. Newly qualified packages.
j. Third party activities.
k. Yield issue trends and corrective actions.
The interval of the status reports to the QA shall be determined by the TRB, but should be as a minimum, quarterly
for the first year following the attainment of QML status and as a minimum, semiannually (no further than six months
apart) thereafter. If major problems with the technology are encountered, more frequent reports may be required by
the QA to keep informed of the status. In addition to the above report, the manufacturer shall make a presentation
yearly to the QA outlining the status of the technology, products offered, future trends and other strategic business
plans of the technology including foreseen changes. At the discretion of the QA, this presentation may be in lieu of a
status report.
140
MIL-PRF-38535K
APPENDIX G
G.3.3 QM plan. The TRB shall oversee and approve the QM plan consisting of the following activities and
initiatives, as a minimum:
a. Quality improvement plan. This plan documents the specific procedures to be followed by the manufacturer
to assure continuous improvement in quality, and reliability of the process and the product being produced.
b. Failure analysis program. This program establishes the procedures that a manufacturer self-imposes to
test and analyze sufficient failed parts to determine each failure category from all stages of manufacturing
and the field. This program should also identify corrective actions or specify the use of a corrective action
plan based on the findings of the failure analysis.
c. SPC plan. A specific plan defining the manufacturer's SPC program, within the manufacturing process, to
the requirements of EIA557.
d. Corrective action plan. This plan should specify the specific steps followed by the manufacturer to correct
any process that is out of control or found to be defective.
e. Change control program. This program addresses the process by which a manufacturer addresses
changes to the technology. Further information of areas to be considered critical for change control are
outlined in G.3.4 herein.
f. SEC and TCV assessment program. The frequency, testing methods, and criteria for evaluations of the
SEC or the TCV or both, including correlation of test structures and actual product, are to be determined by
the TRB based on the manufacturer's assessment of risk. The manufacturer's SEC and TCV evaluation
plan shall be documented.
g. Certification and qualification plan. The certification and qualification plan should be defined in appendix H
including self-assessment and corrective actions.
h. Retention of data. This program establishes the requirements for data retention (see A.4.8.1.2 as a
guideline).
G.3.3.1 QM plan outline. The following should be addressed in the QM plan. Submittal of the QM plan is required
before the validation (certification) meeting.
NOTE:
Many of these items and their associated documentation may be reviewed during the validation.
a. Index of certified baseline documents. A list of the specification titles, document numbers, and revisions that
make up the QML program. This is the baseline the manufacturer was certified to at a validation review.
b. Conversion of customer requirements. A system for converting all customer's requirements into in-house
requirements. This includes determining if certification and QML coverage exist. The following are both part
of the QM plan and the manufacturer's conversion system:
(1) Device specification requirements to Standard Microcircuit Drawing (SMD).
(2) Controlled design procedures and tools (established geometric, electrical, and reliability design rules).
(3) Mask generation procedure within the controlled design procedures of G.3.3.1b.(2).
(4) Wafer fabrication and assembly capabilities baselined.
(5) Design, mask, fabrication, assembly, and test flows.
141
MIL-PRF-38535K
APPENDIX G
(6) QML listing coverage.
(7) SEC, TCV or alternate assessment procedure, and PM programs and test procedures (see G.3.3f).
(8) Incoming inspection and vendor procurement document covering design, mask, fabrication, and
assembly.
(9) Screening and traveler.
(10) Technology conformance Inspection (TCI) procedures, including identification of
destructive/nondestructive classification of tests.
(11) Marking.
(12) Rework.
c. Functional organization chart covering the TRB, quality assurance, and production.
d. Change control program (see G.3.4 herein). This item shall consist of a system by which changes to the
QML program are classified and necessary actions taken. The following shall be addressed, as a minimum:
(1) Major changes.
(2) Required testing.
(3) TRB responsibility (e.g., notification policy).
(4) TRB of MIL-PRF-38535 program interface for DLA Land and Maritime.
e. Failure analysis (see G.3.3 b).
f. Self-audit program and audit results.
g. TRB reporting to DLA Land and Maritime, including checklist and procedure.
h. Yield improvement program (see G.3.3 a).
i. SPC program (TechAmerica EIA557 should be used as a guideline) including, goals and plans of
implementation, in-line Process Monitors , SPC measurement points (including location and procedure
number on applicable flow charts; see G.3.3 c).
j. List of test methods for laboratory suitability including any outside lab.
k. Major test methods for which data may be requested to be submitted:
(1) Burn-in.
(2) Temperature cycle.
(3) Fine and gross leak.
(4) Particle impact noise detection (PIND).
(5) Temperature/humidity testing.
142
MIL-PRF-38535K
APPENDIX G
(6) Preconditioning (board assembly/rework simulation.)
(7) Wafer (lot) acceptance.
(8) Internal visual.
(9) Nondestructive bond pull (NDBP).
(10) Scanning electron microscope (SEM) or nondestructive SEM.
(11) Life test.
(12) Radiographic inspection.
(13) Radiation testing.
l. Calibration.
m. Retention of qualification.
n. Training.
o. Cleanliness and atmospheric controls.
p. Electrostatic discharge (ESD) sensitivity program.
q. Certification and qualification test plan (see G.3.2.2.1).
r. Process for control of third party activities.
s. Characterization procedures for new technology validation.
G.3.4 Change control procedures. The following paragraphs outline areas of concern where a change may
require action by the manufacturer. All changes to any part of a QML manufacturer's line are to be governed by the
manufacturer's TRB and made available to the QA. All changes should be documented as to the reason for the
change with supporting data taken to support the change, including reliability data as appropriate. The decision as to
the criticality of the change shall be guided by the potential effect of the change on quality, reliability, specified
radiation hardness assurance levels (when applicable), performance and interchangeability of the resulting
microcircuits. For any change that merits consideration for requalification, the TRB should decide if requalification is
needed. Microcircuits should be shipped following a change only upon approval of the TRB. Modifications to
screens and TCI's are allowed but shall be justified, documented, and submitted to the QA. Notification of the change
should be made concurrently to the QA for a period of not less than one year after initial QML listing. Thereafter,
notification should be made in the TRB status reports (see G.3.2.3 herein). The manufacturer may make notification
of this change of product through the Government-Industry Data Exchange Program (GIDEP) using the Product
Change Notice; in any case, the manufacturer should assure that all known acquiring activities are notified. For
major changes to class level “S” microcircuits, the manufacturer’s TRB shall notify the QA who will coordinate with the
space community of changes prior to shipment. The manufacturer shall review all changes for applicability to
previous test optimizations and alternate test methods.
143
MIL-PRF-38535K
APPENDIX G
G.3.4.1 Design methodology change. Changes in the design methodology to be evaluated by the TRB shall
include, but not be limited to, changes in the following areas:
a. Technology database (cell/design library).
b. Design flow.
c. Design system (computer automated design (CAD), design rules).
d. Software updates.
e. Model or modeling procedures.
f. Configuration management.
g. Radiation hardness assurance (RHA) (if applicable).
h. Electrical performance.
i. Geometry size reduction.
G.3.4.2 Fabrication process change. Changes in the fabrication process to be evaluated by the TRB shall include,
but not be limited to, changes in the following areas:
a. Fabrication process sequence or process limits.
b. Fabrication process materials or material specifications, including epitaxial (EPI) layer thickness.
c. Photoresistive materials or material specifications.
d. Doping material source, concentration, or process technique (e.g., ion implantation versus diffusion).
e. Cross section diffusion profile.
f. Passivation or glassivation material, thickness or technique (including addition or deletion of passivation).
g. Metallization system (pattern, material, deposition or etching technique, line width or thickness).
h. Baseline (DSCC-VQC-42 form or equivalent).
i. Conductor, resistor, or dielectric materials.
j. Wafer fabrication move from one line, or building, to another.
k. Passivation, or glassivation, process temperature and time.
l. Oxidation or diffusion process, oxide composition and thickness, oxidation temperature and time.
m. Sintering or annealing temperature and time.
n. SEC and how it is tested.
o. Method of mask making.
p. Parametric monitor and how it is tested.
144
MIL-PRF-38535K
APPENDIX G
q. Wafer acceptance criteria.
r. TCV and how it is tested.
s. Sample plans (quantity and acceptance numbers).
t. Gate formation process, material, technique.
u. Backside process to include wafer thinning and backside metallization.
v. Ohmic contact formation.
w. Starting material qualification (e.g., gallium arsenide (GaAs) boule).
x. Lot formation.
G.3.4.3 Assembly process change. Changes in the assembly process to be evaluated by the TRB shall include,
but not be limited to, changes in the following areas:
a. Die attach material, method, or location.
b. Wire/ribbon bond interconnect method.
c. Wire material composition and dimensions.
d. Seal technique (materials or sealing process, gas composition (e.g., for RHA)).
e. Implementation procedures for internal visual and other test methods.
f. Assembly flow.
g. Assembly operation move.
h. Scribing and die separation method.
i. TCI procedures including manufacturer imposed tests.
j. Screening tests.
k. Sample plans (quantity and acceptance numbers).
l. Die back surface preparation.
m. Bond pad geometry, spacing, or metallization.
n. Molding material, method, or location.
o. Chip encapsulation/coating material and technique.
p. Device marking process.
q. Lot formation.
145
MIL-PRF-38535K
APPENDIX G
G.3.4.4 Package change. Changes in the package qualification to be evaluated by the TRB shall include, but not
be limited to, changes in the following areas:
a. Vendor.
b. External dimensions.
c. Cavity dimensions.
d. Number of leads or terminals.
e. Lead or terminal dimensions (length times width or diameter).
f. Lead or terminal base material.
g. Lead or terminal plating material.
h. Lead or terminal plating thickness (range of).
i. Body material.
j. Body plating material.
k. Body plating thickness (range of).
l. Die pad material.
m. Die pad plating.
n. Die pad plating thickness (range of).
o. Lid material.
p. Lid plating materials (range of).
q. Lid plating thickness (range of).
r. Lid seal (preform) material.
s. Lid glass seal material.
t. Lead glass seal material.
u. Lead glass seal diameter (range of).
v. Leads or terminals spacing.
w. Lead configuration (e.g., J-lead, gull-wing).
x. Die size.
y. Device marking process.
z. Lead attachment.
G.3.4.5 Test facility change. Changes in the test facility to be evaluated by the TRB shall include, but not be
limited to, changes in the following areas:
a. Implementation procedures for internal visual and other test methods.
b. Testing flow.
c. Test facility (with laboratory suitability) move from one facility or building to another.
d. Sample plans (quantity and acceptance numbers).
e. Test procedures (including test vector generation).
f. Lot formation.
146
MIL-PRF-38535K
APPENDIX G
(This page intentionally left blank.)
147
MIL-PRF-38535K
APPENDIX H
CERTIFICATION, VALIDATION, AND QUALIFICATION
H.1 SCOPE
H.1.1 Scope. The qualified manufacturers listing (QML) program applies quantifiable measurement techniques that evaluate
a manufacturer’s ability to define and follow a baseline of its process. This baseline can include innovative and improved
processes that result in an equivalent or higher quality product, provided that the methods used to evaluate and document
these changes have been reviewed and approved. Once QML status is achieved, the manufacturer’s Technical Review Board
(TRB) may approve change(s) to the process baseline based on appropriate reliability and quality data upon concurrence with
notification of the Qualifying Activity (QA). The approach outlined in this appendix contains a proven baseline that includes
details of the certification, validation, and qualification programs. The necessary characterization, screening, and qualification
testing applicable to new technologies is also included. This appendix is a mandatory part of the specification. The information
contained herein is intended for compliance. However, for QML microcircuits the manufacturers may offer approved
alternatives that demonstrate a system that achieves at least the same level of quality and reliability as could be achieved by
this appendix.
H.2 APPLICABLE DOCUMENTS
H.2.1 General. The documents listed in this section are specified in section H.3. This section does not include documents
cited in other sections of this appendix or recommended for additional information or as examples. While every effort has been
made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of
documents cited in section H.3 whether or not they are listed.
H.2.2 Government documents.
H.2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of
this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-M-38510
- Microcircuits, General Specification For.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
- Test Method Standard Microcircuits.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
148
MIL-PRF-38535K
APPENDIX H
H.2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
TECHAMERICA
EIA557 - Statistical Process Control Systems.
(Copies of these documents are available online at http://www.techamerica.org or from TechAmerica,
601 Pennsylvania Ave., NW, North Building, Suite 600, Washington DC 20004-2650.)
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JESD78
- IC Latch-up Test.
JESD22-A102
JESD22-A104
JESD22-A106
JESD22-A110
JESD22-A114
- Accelerated Moisture Resistance – Unbiased Autoclave.
- Temperature Cycling.
- Thermal Shock.
- Highly – Accelerated Temperature and Humidity Stress Test (HAST).
- Electrostatic Discharge (ESD) Sensitivity testing Human Body Model (HBM).
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)
ASTM INTERNATIONAL (ASTM)
ASTM D2863
- Standard Test Method for Measuring the Minimum Oxygen Concentration to Support Candle-Like
Combustion of Plastics (Oxygen Index).
ASTM F1269
ASTM G21
- Test methods for Destructive Shear Testing of Ball Bonds.
- Standard Practice for Determining Resistance of Synthetic Polymeric Materials to Fungi.
(Copies of these documents are available online at http://www.astm.org/ or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA 19428-2959.)
UNDERWRITERSLABORATORIES INC. (UL)
UL 94
- Tests for Flammability of Plastic Materials for Parts in Devices and Appliances.
(Copies of this document are available online at http://www.ul.com/ or from Underwriters Laboratories Inc. (UL), 333
Pfingsten Road, Northbrook, IL 60062-2096.)
H.2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of
this document and the references cited herein (except for related specification sheets), the text of this document takes
precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has
been obtained.
149
MIL-PRF-38535K
APPENDIX H
H.3 REQUIREMENTS
H.3.1 General. The qualifying activity (QA) shall evaluate the manufacturer's approach to the process baseline. The
manufacturer shall have a quality management (QM) plan specifying the characterization, certification, and qualification plans of
technologies and product (see appendix G). New technologies shall also be included and have a checklist defining the
necessary requirements for calculation/evaluation of failure mechanism, activation energy, characterization plan, qualification
plan and validation. The QM plan shall be submitted to the QA for approval (see G.3.3.1s). For class level S product, the
manufacturer shall evaluate the changes listed in table A-I in conjunction with the QA to determine if a change should be
classified as a new technology.
H.3.1.1. Characterization requirements. Testing performed with the intent to understand the technology part, materials, and
processes used to determine an item’s capability. The manufacturer should evaluate their process to determine the long term
reliability of the product. For class level S product, a detailed characterization plan identifying critical parameters, test
conditions, durations, required measurements, sample size, and temperatures shall be documented, including a detailed
physics-of-failure analysis considering mechanical, thermal, electrical, and chemical properties that could contribute to failures.
A failure modes effects analysis (FMEA) approach must be followed to ensure to the maximum extent possible that all
significant failure mechanisms have been defined and appropriate mitigation techniques have been identified.
H.3.1.2 Certification. Validation, by the QA, that the manufacturer has the capability of producing product which meets or
exceeds the requirements contained in this specification. The manufacturer shall document the certification plan as
documented in their QM plan. The qualifying activity shall be notified if deviations or exception are taken from the approved
plan.
H.3.1.3 Validation. Verification by the QA that the manufacturer has met or exceeded the requirements utilizing data,
demonstration, other approved techniques, or a combination thereof.
H.3.1.4 Transitional certification. Temporary certification (approximately 2 years maximum) given by the QA to manufacturers
working toward full QML certification (see H.3.3).
H.3.1.5 Qualification requirements. Evidence that the characterization testing and evaluations of failure mechanisms show
the technology meets or exceeds documented requirements. The qualification methodology will vary depending upon the
technology. The manufacturer shall document the qualification plan that is applicable to each technology. The qualification
testing for new technologies shall consist of standard military test methods as outlined in MIL-PRF-38535, MIL-STD-883, or the
QM plan as approved by the QA, including any tests deemed necessary by the characterization and physics-of-failure analysis.
H.3.1.6 New technology requirements. For class level B product, this is a product family, material, or process, that has never
been previously characterized and qualified by the manufacturer, and is detailed in the manufacturer’s new technology insertion
program (see 3.4.1.1.1 and 6.4.43).
For class V and class Y (class level S), this is a product family, material, or process, that has never been previously
characterized and qualified by the manufacturer for space applications, and is detailed in the manufacturer’s new technology
insertion program (see 3.4.1.1.1, 6.4.43 and B.3.9).
H.3.1.7 Mature technology requirements. A mature technology is one which the manufacturer has previously released to
production the techniques, materials, controls, design, and has a continuous reliability monitor plan in place to identify major
reliability life-limiting mechanisms and their associated acceleration factors establish activation energy, detect long-term product
shifts, and generate process data or established proof of stable process and/or equipment with negligible wear out
(see 6.4.44).
H.3.1.8 General QML process flows. The general QML process flows for new suppliers, and existing certified suppliers,
providing class level B products is shown in figure H-1, and for new suppliers, and existing certified suppliers, providing class
level S products is shown in figure H-2.
150
MIL-PRF-38535K
APPENDIX H
New suppliers for class level B products.
The Qualifying Activity (QA) 1/
provides pre-audit information
to suppliers.
Suppliers provide required
pre-audit information to the
QA for review.
QA shall review and provide feedback
to the suppliers to make an
arrangement for QA to perform
on-site audit of facilities, as necessary.
Block 3
Block 1
Block 2
Go to Block 2 of the “Existing certified
suppliers for class level B products”
flow, and proceed.
QA will issue QML certification
to suppliers when all issues,
concerns, and deficiencies are
closed.
Suppliers can now pursue
qualification in accordance
with the approved processes
as outlined in the QM plan
and MIL-PRF-38535.
Block 5
Block 6
Block 4
1/ The QA is the DLA Land and Maritime, Columbus.
Existing certified suppliers for class level B products.
Initially, suppliers shall provide a
QA shall review and provide
feedback to suppliers and
schedule for on-site audit of
their facilities prior to
implementation of QM plan.
Block 3
Suppliers shall submit revised QM
plan to the Qualifying Activity (QA) 1/
addressing New Technology
requirements per MIL-PRF-38535 for
QA approval.
detailed qualification and
characterization manufacturing
QM plan for QA review, which is
to be certified/qualified for QML.
2/
Block 1
Block 2
Once all concerns have been
addressed, QA will issue an
approval to suppliers to initiate
performing of characterization
and qualification testing.
Block 4
Suppliers will provide
characterization data and
qualification test report/data
for the New Technology to
the QA.
QA shall review and provide
feedback to supplier’s prior to listing
QML, the manufacturer shall submit
test qualification report to QA. Once
information is acceptable, QA will
issue an approval and enlist
products on the QML listing.
Block 6
Block 5
1/ The QA is the DLA Land and Maritime, Columbus.
2/ Any deviation from a previously QA approved plan for new technology shall require again QA approval prior to listing
on QML.
FIGURE H-1. Class level B QML process flows
151
MIL-PRF-38535K
APPENDIX H
New suppliers for class level S products.
The Qualifying Activity (QA) 1/
provides pre-audit information
to suppliers.
Suppliers provide required
pre-audit information to the
QA to review. The QA
shall coordinate with the
space community.
QA shall review and provide feedback
to the suppliers to make arrangements
for QA to perform on-site audit of their
facilities, as necessary.
Block 1
Block 3
Block 2
Go to Block 2 of “Existing
certified suppliers for class
level S products” flow, and
proceed.
QA will issue QML certification
to suppliers when all issues,
concerns, and deficiencies are
closed.
Suppliers can now pursue
qualification in accordance with the
approved processes as outlined in
the QM plan and MIL-PRF-38535.
Block 5
Block 6
Block 4
1/ The QA is the DLA Land and Maritime, Columbus.
Existing certified suppliers for class level S products. 1/
Suppliers shall submit revised QM
plan to the Qualifying Activity (QA) 2/
addressing New Technology
requirements per MIL-PRF-38535.
Block 1
Suppliers shall provide a
detailed characterization and
qualification test plans for
review by QA for certification
of QML supplier 3/.
QA shall coordinate and
provide feedback to suppliers,
and will schedule for on-site
audit of facilities prior to
implementation of QM plan.
Block 3
Block 2
Once all concerns have been
addressed, QA will issue
approval to suppliers to initiate
performing of characterization
and qualification testing.
Block 4
Suppliers shall provide
QA shall review and provide feedback to
suppliers prior to listing QML, the
manufacturer shall submit qualification
test report summary to QA. Once
information is acceptable, QA will issue
an approval and products will be listed on
the QML listing.
characterization data and
qualification test report/data
for New Technology to the
QA for review.
Block 5
Block 6
1/ Each block requires coordination with the space community and approval by the QA.
2/ The QA is the DLA Land and Maritime, Columbus.
3/ Any deviation from a previously QA approved plan for new technology shall require again QA approval prior to listing
on QML.
FIGURE H-2. Class level S QML process flows.
152
MIL-PRF-38535K
APPENDIX H
H.3.1.9 Overview of QML Approval Process. The process for achieving QML approval is outlined below in six basic stages
and is further described in detail in the subsequent sections. The stages are listed in the normal sequence to be accomplished;
however, several stages may occur concurrently.
a) Design, wafer fabrication, assembly, and test certification;
1) Design methodologies:
i) Reliability and radiation hardness assurance (RHA) design rules.
2) Wafer fabrication/foundry processes:
i) SPC controls
ii) Metallization controls
iii) Reliability monitors
3) Assembly processes
4) Screening and Test Methodologies
5) Audit/approval
b) Physics-of-failure/TCV reliability assessment;
1) Plan approval
i) Electromigration (EM)
ii) Time dependent dielectric breakdown (TDDB)
iii) Hot carrier injection (HCI)
iv) Threshold voltage instability, including Negative Bias Temperature Instability (NBTI) for 130 nm and
smaller CMOS technologies.
v) Metallization stability over life.
vi) Others as applicable
2) Report approval
c) Process technology validation/SEC qualification;
1) Plan approval
i) Screening flow
ii) Process performance characterizations
iii) Process qualification tests
iv) For class level B products, life test on a minimum of 1 wafer lot for 1000 hrs minimum at 125°C ambient,
or equivalent.
v) For class level S products, long term life test shall meet the requirements of paragraph B.3.4, appendix B,
or shall meet long term life test on a minimum of 1 wafer lot for 4,000 hours minimum at 125°C ambient, or
equivalent.
2) Report approval
d) Product qualification (From existing qualified process technology)
1) Plan approval
i) Screening flow
ii) Product performance characterizations
iii) Product qualification tests
iv) 1,000 hour life test or equivalent
2) Report approval
e) Standard Microcircuit Drawing (SMD)
1) Draft development
2) User coordination
3) SMD release
f) QML listing of approved parts.
153
MIL-PRF-38535K
APPENDIX H
H.3.1.10 Manufacturer’s Responsibility. It is the manufacturer’s responsibility to ensure all of the defined systems and
controls are fully implemented and operational as defined in this specification, appendices, and applicable standards and
specifications. The manufacturer shall provide a focal point representative for the coordination and communication of QML
program.
H.3.1.11 Qualifying Activity (QA) Responsibility. The QA is responsible for the coordination between the government
agencies in the performance of quality audits and report approvals. The QA shall consolidate concerns and observations from
the various agencies to provide a jointly agreed to position to provide to the manufacturer in addressing audit deficiencies and
in meeting the specified requirements.
Any request for data, additional testing, or new manufacturing requirements, for a QML manufacturer, that were not part of
the QA approved certification, qualification test plan, or DLA Land and Maritime audit results, must be provided to and approved
by the QA. Supporting data for the request shall also be provided to the QA. Upon approval by the QA, the QA shall submit the
request or requirement to the QML manufacturer. The QA shall arrange any necessary conference calls or site visits with the
QML manufacturer.
H.3.2 Certification.
H.3.2.1 Design, Wafer Fabrication, Assembly, and Test Certification. The QA shall perform certification validation of the
Design, Wafer Fabrication, Assembly, and Test capabilities of the manufacturer. The QA validation shall include analysis of
data, and demonstration of the manufacturer’s capability, to meet the requirements for certification in the following areas:
H.3.2.1.1 Design. The manufacturer should address the design methodology for the following areas of design.
NOTE: These are also applicable to third party design centers.
H.3.2.1.1.1 Circuit design. QML microcircuits should address the circuit design requirements and performance
characteristics herein:
a. Model verification. Provide evidence that all models utilized in the design process are functional, predictable, and
accurate over the worst case temperature and electrical extremes. Examples of these models are: electrical
(transistor, passives, interconnect, package), behavioral, logic, fault, timing, signal integrity, power estimation and
thermal conductivity.
b. Layout verification. Demonstrate the capability of the automated or manual procedures routinely used for design,
electrical, and reliability rule checking to catch all known errors, singularly and in combination. These rules cover, as a
minimum:
(1) Design rules check (DRC): Geometric and physical.
(2) Electrical rules check (ERC): Shorts and open, connectivity.
(3) Reliability rules: Electromigration and current density, IR drops, latch-up, single event upset (SEU), hot carrier
injection (HCI), electrostatic discharge (ESD), burnout backgating (for gallium arsenide (GaAs) technology).
c. Performance verification. The manufacturer should design and construct a chip or set of chips to assess the process
capability to perform routing and to accurately predict post-routing performance. The manufacturer should
demonstrate that the actual measured performance for each function over temperature and voltage falls between the
two worst case performance limits or is covered by statistical models. All critical minimum geometric and electrical
design rules should be stressed via devices or structures located on the SEC, TCV, or PMs. The electrical stress
requirements for the transistors, passive devices and interconnects on these structures should be determined by worst
case circuit conditions. Failure analysis (FA) should be conducted to identify the failure mechanisms occurring in any
failed devices and/or structures. Corrections to the design or to the verification/screening method shall be undertaken
to mitigate any future occurrences of failures. These changes shall be presented to the QA prior to implementation if
part of a new technology test plan. It is allowed that the manufacturer may choose actual product for their TCV or
SEC. The manufacturer shall demonstrate burn-in circuits and life test conditions through characterization efforts to
ensure proper operation at the device specified frequency.
154
MIL-PRF-38535K
APPENDIX H
d. Testability and fault coverage verification. The manufacturer should demonstrate a design style and a design-for-test
(DFT) methodology that, in conjunction with demonstrated CAD for test tools, can provide 99 percent or greater fault
coverage on a design of reasonable complexity. The manufacturer should also address their approach for a testability
bus to groups such as the Joint Test Action Group (JTAG). The manufacturer should demonstrate the fault coverage
measurement (fault simulation, test algorithm analysis, etc.) capability that is used to provide fault coverage statistics
of the design using the demonstrated design style, DFT method and CAD for test tools. Measurement of fault
coverage should be in accordance with the procedures defined in TM 5012 of MIL-STD-883. For non-digital
microcircuits, the fault coverage requirement may not be applicable, but should be supplemented as measures of
analog fault coverage become better defined. For microcircuits with both analog and digital functions, this requirement
fully applies to the digital portions of the microcircuits.
H.3.2.1.1.2 Design checklist (Class level S) . The following items shall be used as minimum requirements, as applicable for
the technology, for the manufacturer and QA in evaluating the new technology for class level S product:
a. Design environment/infrastructure.
(1) Project schedule.
(2) Resource management (e.g., designers, hardware, software development).
(3) Historical factors (e.g., any pertinent information based on previous designs, design rules, lessons learned, etc.).
(4) Tools and design flow.
(5) ASIC cell library and design kit.
(6) Intellectual property (IP, e.g., any pertinent information such as use of 3rd party licensed IP, IP developed by
another entity or manufacturer, etc.).
(7) Models (for those developing their own cell libraries, and ASIC design kits), for analog/signal
integrity simulations, and power calculations.
b. Detailed design hardware description language (HDL) coding (first phase of design).
(1) Specification development guidelines (e.g., what design information must be included in the specification).
(2) HDL coding guidelines.
(3) Design for test (DFT) insertion and fault testing.
(4) Built-in self test (BIST).
c. Validation/verification of modules and top level design.
(1) Fault coverage percentage.
(2) Emulation/prototyping.
(3) Radiation effects mitigation.
d. Synthesis, static timing.
(1) Foundry synthesis guidelines – Handoff to design team
(2) Formulation of constraints from specification/requirements.
(3) Synthesis and statically timed net list – Correlated with original HDL.
155
MIL-PRF-38535K
APPENDIX H
e. Physical design.
(1) Foundry physical design guidelines – Handoff to design team
(2) Placement based on partitioning, architecture, I/O location.
(3) Static timing analysis, with iterated placement, cell sizing and routing to achieve timing closure.
f. Release to foundry.
(1) Foundry run rule checks
(2) Critical design/final design review, utilizing foundry checklists.
H.3.2.1.1.3 Package Design. Packages used for QML microcircuits should address the design requirements and
performance characteristics herein. Characterization may be performed by the microcircuit manufacturer, by an external
lab, or by the package supplier. In any case, the manufacturer's assembly of QML microcircuits should address all the
testing requirements herein. The manufacturer shall address package design/construction quality and reliability. The
manufacturer is responsible to maintain documented validation of all characterization methods used, including all
supporting data.
a. Thermal characterization. The thermal resistance should be determined for all packages used in the manufacture
of QML parts. This value may be obtained by direct or indirect measurements, or by simulation tools or
calculations. TM 1012 of MIL-STD-883 may be used for this calculation. If the thermal resistance is obtained by a
calculation or simulation tool, this procedure should be certified. To certify such a method of theoretical
estimation, the manufacturer shall demonstrate a correlation between the theoretically estimated value and the
actual measured value for at least one package of the same style with equal or greater pin count.
b. Electrical characterization. The following electrical characterization parameters should be addressed:
(1) Ground and power supply impedance. Packages used in the manufacture of QML microcircuits should be
minimal contributors to ground and power supply noise. The above requirement can be met either through
the use of documented package design rules or through testing of the packages, either individually or by
similarity, in accordance with TM 3019 of MIL-STD-883.
(2) Cross-coupling effects. Cross-coupling of wideband digital signals and noise between pins in packages used
for digital QML microcircuits should be minimized. The above requirement can be met either through the use
of documented package design rules or through testing the packages, either individually or by similarity, in
accordance with TM 3017 and TM 3018 of MIL-STD-883.
(3) High voltage effects. The voltage applied to a QML package should not produce a surface or bulk leakage
between adjacent package conductors (including leads or terminals). The above requirement can be met
either through the use of documented high voltage package design rules aimed at minimizing bulk or surface
leakage, or through testing of the high voltage packages, either individually or by similarity, in accordance
with TM 1003 of MIL-STD-883.
c. Mechanical characterization. The manufacturer shall perform package mechanical characterization tests which
includes evaluation for shock and vibration to demonstrate the capability to withstand impacts due to moisture
ingression, contamination, corrosion, etc.
156
MIL-PRF-38535K
APPENDIX H
H.3.2.1.2 Wafer fabrication. This includes the manufacturer’s in-house fabrication or the subcontractor’s fabrication. The
wafer fabrication quality systems and controls include statistical process control (SPC) and in-process monitoring programs
including the technology characterization vehicle (TCV) program or the Standard Evaluation Circuit (SEC) and parametric
monitors (PMs) or alternate assessment procedure with the approval of qualifying activity (QA).
As part of certification, the manufacturer should identify a specific technology or technologies for the wafer fabrication. A
technology consists of the fabrication sequence, design rules and electrical characteristics. Demonstration of wafer fabrication
capability consists of the fabrication sequence, design rules, electrical characteristics, and process information. All supporting
documentation and data shall be made available to the qualifying activity before or during the management and technology
validation (see G.3.2.2.1).
A plan shall also be presented that provides for an on-going reliability monitor and failure rate calculations.
H.3.2.1.2.1 Wafer fabrication checklist (Class level S) . The following items shall be used as minimum requirements, as
applicable for the technology, for the manufacturer and QA in evaluating the new technology for class level S product:
a. Process development
(1) Design of experiments (This information may not be readily available for older technologies especially when a
process is transferred from another facility).
(2) Process sensitivity (This will define what parameters within the process would identify if the process is stable or
marginal. Process variation is different and shows the process can yield even when the parameters are at
minimum or maximum).
(3) Modeling and simulation.
(4) Producibility and yield analysis.
b. Process characterization.
(1) Voltage.
(2) Temperature (Minimum range of -55°C to +125°C, otherwise provide justification).
(3) Process variability.
(4) Best and worst case or statistical simulation models considering independent variation of device types (e.g. NFET
and PFET).
(5) Frequency (Defined by the electrical requirements of the device specification).
(6) Radiation (see appendix C), if applicable.
(7) Performance margins (until failure).
(8) Process optimization.
(9) Process maturity assessment.
157
MIL-PRF-38535K
APPENDIX H
c. Process qualification.
(1) Test vehicle.
(2) Single or 1 lot.
(3) Environmental conditions (for fabrication, test, assembly, and storage).
(4) Accept/reject criteria.
(5) Perceptivity of tests (TCV and test programs shall be capable of highlighting the critical parameters and
discerning the results that identify accept/reject criteria).
(6) Process baselined for qualification ( no further changes required after characterization).
(7) Qualification by test, similarity, or space heritage (Process or device that has been produced and passed space
level testing and has flown in a space environment similar to the environment expected for this process/device).
d. Fabrication.
(1) TRB program (or equivalent) (see G.3.2.2).
(2) SPC and in-process monitoring program (see H.3.2.1.3).
e. Radiation hardness assurance (RHA) (see appendix C), if applicable.
H.3.2.1.3 SPC and in-process monitoring program. An in-process monitoring system should be used by the manufacturer
to control key processing steps to insure device yield, reliability, and RHA if applicable. The monitoring system can utilize
various test structures, methods, and measurement techniques. The critical operations to be monitored should be determined
by the manufacturer based on their experience and knowledge of their processes. The resulting data should be analyzed by
appropriate SPC methods (in accordance with the requirements of TechAmerica EIA557 to determine control effectiveness.
The following should be addressed for the wafer fabrication process, as a minimum, by the manufacturer:
a. Incoming mask and fabrication process materials.
b. Equipment used for wafer fabrication.
c. Doping material concentration.
d. Cross section diffusion or concentration profile, and epitaxial (EPI) layer.
e. Passivation or glassivation.
f. Metallization deposition.
g. Resultant line width.
h. Passivation process temperature and time.
i. Diffusion, implant anneal process temperature, and time, or both.
j. Sintering or annealing temperature and time.
k. All reliability test data including the standard evaluation circuit (SEC).
l. Mask inspection and defect density data.
m. Parametric monitor test data.
n. Photoresistive processing (including rework procedures).
158
MIL-PRF-38535K
APPENDIX H
o. Ion implant.
p. Wafer backside preparation.
q. Wafer probe acceptance criteria.
r. Rework policy.
s. Oxide process.
t. Gate formation.
u. Air bridge process.
v. Via hole process.
w. Clean room procedures.
x. Change control system/notification.
y. Lot travelers (ref. A.3.4.6, A.3.4.6.1)
z. Equipment calibration and preventive maintenance.
aa. Wafer traceability.
ab. Wafer acceptance plan.
ac. Wafer bump characteristics (height, width etc.,)
H.3.2.1.3.1 SPC and in-process monitor checklist (Class level S) . The following items shall be used as minimum
requirements, as applicable for the technology, for the manufacturer and QA in evaluating the new technology for class level S
product:
a. Define SPC monitor points.
b. Define control limits and absolute limits.
c. Review of data by the manufacturer and QA.
d. Out of control (OOC) action plans.
e. Radiation performance, if applicable.
f. Process capability (CPK) trigger level.
g. Sample data for any prime lot reviewed by the manufacturer and QA (Prime lot is defined as a lot meeting all
process monitor requirements with no MRB or out of control actions implemented).
h. SPC controls in place audited by the QA.
159
MIL-PRF-38535K
APPENDIX H
H.3.2.1.3.2 Parametric monitor (PM) . The manufacturer should have PMs to be used for measuring electrical
characteristics of each wafer type in a specified technology. The PM test structures can be incorporated into the grid (kerf),
within a device chip, as a dedicated drop-in die or any combination thereof. Location of the PM test structures should be
optimally positioned to allow for the determination of the uniformity across the wafer. A suggested location scheme is one near
the wafer center and one in each of the four quadrants of the wafer, at least two-thirds of a radius away from the wafer center.
The manufacturer should establish, and document, reject limits and procedures for parametric measurements including which
parameters shall be monitored routinely and which shall be included in the SPC program. Documentation of the PM should
also include PM test structure design, test procedure (including electrical measurement at temperature and the relationship
between the measured limits and those determined in the manufacturer's circuit simulations), design rules and process rules.
Alternate measurement techniques, such as in-line monitors, are acceptable if properly documented. The following parameters
are to be used as a guideline by the manufacturer's TRB in formulating the PM.
a. General electrical parameters.
(1) Sheet resistance: Structures should be included to measure the sheet resistance of all conducting layers.
(2) Junction breakdown: Structures should be included to measure junction breakdown voltages for all diffusions.
(3) Contact resistance: Structures should be included to measure contact resistance of all inter-level contacts.
(3) Ionic contamination and minority carrier life time: Structures should be included to measure ionic contamination,
such as sodium, in the gate, field, and inter-metal dielectrics and minority carrier lifetime.
b. MOS parameters.
(1) Gate oxide thickness: Structures should be included to measure gate oxide thickness for both “N” and “P” gate
oxides as applicable.
(2) MOS transistor parameters: A minimum set of test transistors should be included for the measurement of
transistor parameters. The minimum transistor set should include a large geometry transistor of sufficient size
that short channel and narrow width effects are negligible, and transistors that can separately demonstrate the
maximum short channel effects and narrow width effects allowed by the geometric design rules. Both "N" and "P"
transistors should be included for a complementary metal oxide semiconductor (CMOS) technology. If there is
more than one nominal threshold voltage for either the "N" or "P" transistor type the minimum set should be
included for each threshold. The transistor parameters to be measured are given below:
(a) Threshold voltage: The linear threshold voltage (VT) for each transistor in the minimum set of transistors
should be measured.
(b) Linear transconductance: The linear transconductance (gm) for the full minimum set of transistors should be
measured.
(c) Effective channel length: The effective channel length for the minimum channel length of each transistor
type should be measured.
(d) Ion: Ion for representative transistors in the set.
(e) Ioff: Ioff for representative transistors in the set.
(f) Propagation delay: A test structure should be available in the form of a functional circuit from which
propagation delay information can be measured at room temperature.
(g) Field leakage: Field transistor leakage for the minimum spaced adjacent transistors at the maximum
allowed voltage should be measured.
160
MIL-PRF-38535K
APPENDIX H
c. Bipolar parameters. Care should be taken in the manner and sequence in which all breakdown voltage and current
measurements are taken so as to not permanently alter the device for other measurements.
(1) Sheet resistance: Structures should be included which can be used to measure sheet resistance of all doped
regions (e.g., emitter, buried collector.)
(2) Schottky diode parameters: The following measurements should be made on Schottky diodes representative of
the size used in the technology:
(a) Reverse leakage: The reverse leakage current (IR) should be measured at a specified reverse voltage.
(b) Reverse breakdown: The reverse breakdown voltage (BV) should be measured at a specified current.
(c) Forward voltage: The forward turn-on voltage (Vf) should be measured at a specified current.
(3) Bipolar transistor parameters: The following measurements should be made on bipolar transistors representative
of the size and type used in the technology. The types should include NPN, Schottky clamped NPN, vertical
PNP, substrate PNP, and lateral PNP transistors as applicable.
(a) Transistor gain: The common emitter dc current gain (Hfe) should be measured on representative
transistors over three decades of collector current, the highest point of which is at the maximum rated
current of the device.
(b) Leakage currents: The leakage currents (ICEO, ICBO, and IEBO) should be measured on representative
transistors at a specified voltage.
(c) Breakdown voltages: The breakdown voltages (BVEBO, BVCBO, and BVCEO) should be measured on
representative transistors at specified currents.
(d) Forward voltages: The forward voltages (VBEO and VBCO) should be measured on representative transistors
at the rated currents.
(e) Propagation delay: A test structure should be available in the form of a functional circuit from which
propagation delay information can be measured at room temperature.
(4) Isolation leakage: The isolation leakage current (IL) between minimum spaced adjacent transistor collectors
should be measured at a specified voltage.
d. GaAs parameters.
(1) Sheet resistance: Structures should be included which can be used to measure sheet resistance of each of the
conducting layers.
(2) Metal-insulator-metal (MIM) capacitor: Capacitor test structures should be included so that dc and rf capacitance,
leakage, and breakdown can be measured.
(3) FAT FET: A long gate length FET suitable for measurement of Schottky barrier height and ideality factor, carrier
concentration and mobility, and channel depth should be included.
(4) Isolation: A structure for use in measuring substrate isolation breakdown should be included.
(5) Ohmic contacts: An ohmic contact transmission line structure should be included so that specific contact
resistance and transfer length can be measured.
161
MIL-PRF-38535K
APPENDIX H
(6) GaAs FET parameters: FET test structures should be included, suitable for RF probing, which can be used for
measurement of both DC and RF FET parameters. The following parameters should be measured:
(a)
Idss - saturated drain current at zero gate bias.
(b) gm - transconductance at saturation and at 50 percent Idss
(c) Pinch off voltage.
.
(d) Gate-drain leakage and breakdown voltage.
(e) Gate-source breakdown voltage.
(f) Source and drain resistance.
(g) S-parameters of FET over frequency range of technology.
e. Fast-test reliability structures. Fast-test reliability structures are structures meant to evaluate, within a few seconds of
testing, a particular known reliability failure mechanism to insure that the processing which an individual wafer
received is consistent with the reliability goals of the technology. The fast-test structures are in general new and, with
the exception of hot carrier aging structures, are not sufficiently mature. Development work on them is intense
however, and it is intended that these structures when mature, shall become a mandatory part of the PM. For this
reason it has been decided to include information regarding fast-test reliability structures in the following paragraphs.
Documentation should be available which shows the correlation between fast-tests and the results of the more
traditional accelerated aging tests performed on the TCV.
(1) Hot carrier aging: A fast-test structure should be included to evaluate the susceptibility of MOS transistors to hot
electron aging. This structure may be one of the PM test transistors.
(2) Electromigration: Worst-case design rule fast-test structures should be included to evaluate the susceptibility of
each metal level and the associated contacts to electromigration.
(3) Time dependent dielectric breakdown (TDDB): Fast-test structures should be included that can evaluate the
long-term reliability of gate oxides.
(4) Contact resistance: Fast-test structures should be included that can evaluate the long-term reliability of contacts.
(5) Gate diffusion: Fast-test structures should be included that can evaluate the long-term reliability of the gate
contact.
(6) Threshold voltage instability, including Negative Bias Temperature Instability (NBTI) for 130 nm and smaller
CMOS technologies.
H.3.2.1.4 Wafer acceptance plan. The TRB should develop and demonstrate a wafer acceptance plan based on electrical
and radiation (if applicable) measurement of PMs. This plan should utilize the PM and should include visual criteria, if
applicable.
For wafer lot acceptance tests shall be performed in accordance with TM 5007 of MIL-STD-883 or an alternative which
meets the minimum requirements of TM 5007 on each wafer lot producing class V or class Y (class level S) devices. The use
of TM 5013 of MIL-STD-883 is encouraged for GaAs technology devices. In addition, this plan should address the concerns
detailed in TM 2018 of MIL-STD-883 (e.g., metallization, step coverage). The use of TM 2018 is encouraged, however
alternate procedures utilizing PMs and in-line monitors are accepted if approved during validation. PM data should be recorded
and made available for review.
This plan can be either a wafer by wafer acceptance plan or a wafer lot acceptance plan, but shall address the following
concerns:
a. Small lots.
b. Large lots.
c. Specialty lots.
162
MIL-PRF-38535K
APPENDIX H
H.3.2.1.5 Assembly and packaging. The manufacturer shall demonstrate the quality system and controls, including SPC
and in-process monitoring programs for both in-house assembly line and any/all of their subcontractors performing assembly
processing for SMD products.
H.3.2.1.5.1 Assembly and packaging technology certification. As part of the certification, the manufacturer should identify
the specific assembly technologies that are expected to be listed as part of the technology flow for QML and used in QML
microcircuits. Those processes shall be qualified by addressing, as a minimum, the test in tables H-IA or H-IB as appropriate.
An assembly technology consists of the materials and processes used for wafer saw, die attach, wire bond, flip chip
attachment, package sealing, lead attach, solder dipping, marking, and any other process involved with the construction of the
product. All supporting documentation and data shall be made available to the qualifying activity before or during the
management and technology validation (see G.3.2.2.1).
The following items shall be used as minimum requirements by the manufacturer and the QA in evaluating assembly and
packaging for class level S product:
a. Assembly processes.
(1) Die attach.
(2) Wire bond/bump.
(3) Encapsulation.
(4) Process monitors/SPC.
(5) Inspections.
(6) Tests – Mechanical, thermal, optical.
(7) Lead or column attach.
(8) Incoming tests or review of accompanying C of C on materials (e. package, die attach material, etc.).
b. Package processes and technology.
(1) Design.
(2) Materials selection.
(3) Assembly under supplier control.
(a) By supplier.
(b) Subcontracted.
(4) Thermal characterization.
(a) Hot spots.
(b) Thermal impedance.
(5) Electrical characterization.
(a) At specification levels including voltage, full temperature range, and other excitation conditions.
(b) Beyond specification conditions to determine margin.
(c) Plan to address unspecified or untested parameters (Review analysis to ensure critical untested parameters
are specified or addressed)
(6) Package qualification data.
(a) Incoming package tests on bare package.
(b) Incoming tests on raw materials (e. die attach, etc.)
(c) Mechanical tests.
(d) Thermal tests.
(e) Electrical tests.
(f) Thermal impedance.
(7) Column attachment.
(a) ESD controls.
(b) at 25°C electrical validation pre and post column attach.
(c) Mechanical integrity.
(d) Co-planarity.
163
MIL-PRF-38535K
APPENDIX H
H.3.2.1.6 SPC and in-process monitoring program. A process monitoring system should be used by a manufacturer to
control key processing steps to insure product yield and reliability. The monitoring system can utilize various test chips,
methods and measurement techniques. The critical operations to be monitored shall be determined by the manufacturer based
on their experience and knowledge of their processes. The resulting data should be analyzed by appropriate SPC methods to
determine control effectiveness. The following should be addressed, as a minimum, by the manufacturer:
a. Incoming assembly process materials.
b. Incoming package acceptance.
c. Equipment used for assembly.
d. Wafer acceptance criteria.
e. Die attach.
f. Chip to package interconnect (wire/ribbon bond, tab, flip chip).
g. Package seal.
h. Marking.
i. Rework.
j. Lead trim, form, and final finish.
k. Atmosphere and cleanliness control.
l. Chip encapsulation/molding.
m. Encapsulant purity.
n. Internal water vapor.
o. Flip chip die pull off test shall be performed (before underfill dispense) in accordance with TM 2031
and bump shear test shall be performed for wafer bump technology qualification.
p. Balls/Columns attach.
H.3.2.1.7 Test capability. The manufacturer shall document test capability to their QM plan, which includes devices
screening, qualification and technology conformance test conditions in accordance with the applicable Standard Microcircuits
Drawing (SMD), MIL-PRF-38535, and MIL-STD-883, as applicable to the product.
H.3.2.1.8 Certification approval. Upon successful demonstration by the manufacturer of meeting the certification
requirements, the QA will issue a certification of approval. This certification will include QA approved alternatives and test
optimizations as presented by the manufacturer and listed in the QM plan. Documentation and data presented by the
manufacturer during the certification process does not need to be provided as a part of the reliability assessment and
qualification stages.
H.3.2.2 Physics-of- failure/TCV reliability assessment.
H.3.2.2.1 Reliability assessment plan. For class level S product, the manufacturer shall provide to the QA a reliability
assessment plan for the technology. The plan shall account for all significant failure mechanisms as listed in the following
sections.
H.3.2.2.2 TCV program . A TCV program should be implemented by the manufacturer for the technology or process being
considered for certification. The program should contain, as a minimum, those test structures needed to characterize a
technology's susceptibility to intrinsic reliability failure mechanisms such as electromigration, time dependent dielectric
breakdown (TDDB), gate sinking, ohmic contact degradation, sidegating/backgating, hot carrier aging and threshold voltage
instability, including Negative Bias Temperature Instability (NBTI). If other wear-out mechanisms are discovered as integrated
circuit technology continues to mature, test structures for the new wear out mechanisms should be added to the TCV program.
The TCV program shall be used for the following purposes: Certification of the technology; reliability monitoring; radiation
hardness assurance and monitoring, when applicable; change control; and the characterization of fast-test intrinsic reliability
structures.
NOTE: The test structures necessary to monitor intrinsic reliability failure mechanisms do not have to be a single die or
location, but can appear on the PM, the SEC, or the device itself. The TCV program (see G.3.3.f) should, however, indicate
where the structures are located and how they are tested and analyzed.
164
MIL-PRF-38535K
APPENDIX H
H.3.2.2.2.1 TCV certification. For initial reliability assessment, sufficient TCV test structures for each wear-out mechanism
should be subjected to accelerated aging experiments. The TCV test structures should be randomly chosen from and evenly
distributed from three homogeneous wafer lots in the technology to be certified in the fabrication facility to be certified. These
wafers shall have passed the wafer or wafer lot acceptance requirements. The accelerated aging experiments should produce
an estimate of the mean time to failure (MTTF) and a distribution of the failure times under worst case operating conditions and
circuit layout consistent with the design rules for each wear-out mechanism. From the MTTF and distribution of failures a worst
case operating lifetime or a worst case failure rate can be predicted. Test structures should be from completed wafers which
have been passivated/ glassivated. A summary of the accelerated aging data and analysis should be available for review by
the qualifying activity. The initial certification MTTF, failure distribution and acceleration factors should be used as benchmarks
for the technology to which subsequent TCV results shall be compared. This includes evaluation of activation energy,
acceleration factors based on voltage and temperature for the technology, long term reliability and known failure mechanism
(FMEA) and mitigation strategies. The current density and temperature acceleration factors for electromigration should be
determined and a MTTF and failure distribution determined for the worst case current, temperature, and layout geometry
allowed in the technology. From the MTTF and failure distribution, a failure rate for electromigration in the technology should be
calculated.
All of the TCV test structures shall use the same packaging materials and assembly procedures as standard circuits in the
technology. The TCV structures need not use a fully qualified package since qualified packages shall tend to have lead counts
far in excess of those needed for intrinsic reliability studies. The packaging requirement for the TCV may be waived by the
qualifying activity if the manufacturer can supply documentation showing the equivalence of wafer level and packaged
accelerated aging results.
NOTE: In those cases where this may not be possible, the TCV should use a suitable package to allow for the evaluation of the
chip technology to be qualified, without adversely affecting the outcome of the test.
An example of the requirements of packages for TCV test structure concerns the hydrogen content of a ceramic package and
its effect on hot carrier aging, and can differ substantially for packaged and non-packaged devices. The minimum requirements
to be addressed for the TCV structures for specific mechanisms are given below.
a. Hot carrier aging. The TCV should use structures that monitor hot carrier aging applicable to the technology to be
used in QML microcircuits. Device degradation is to be characterized in terms of both linear transconductance (gm)
and threshold voltage (VTH) and the resistance to hot carrier aging is to be based on whichever parameter
experiences the manufacturers' specified degradation limit for the minimum channel length and width allowed in the
technology. A wafer level fast-test screen should be established for technologies that are susceptible to hot carrier
aging. This test should be part of the wafer acceptance criteria.
(1) Metal oxide semiconductor (MOS). The TCV should have structures to characterize the effects of hot carrier
aging as a function of channel length for MOS transistors for each of the nominal threshold voltages used in the
technology. Degradation should be characterized in terms of gm and VTH
.
(2) Bipolar. The TCV should contain structures for characterizing hot carrier aging of diodes in bipolar technologies.
b. Electromigration. The TCV should contain structures for the worst case characterization of metal electromigration
over:
(1) Flat surfaces.
(2) Worst case noncontact topography.
(3) Through contacts between conductive layers.
(4) Contacts to the substrate.
165
MIL-PRF-38535K
APPENDIX H
c. Time dependent dielectric breakdown (TDDB) (MOS). The TCV should contain structures for characterizing TDDB of
gate oxides. The structures should have gate oxide area and perimeter dominated structures. Separate perimeter
structures should be used for the gate ending on a source or drain boundary and where the gate terminates over the
transistor-to-transistor isolation oxide. The electric field and temperature acceleration factors for TDDB should be
determined and a MTTF and failure distribution determined for the worst case voltage conditions and thinnest gate
oxide allowed in the technology. From the MTTF, a failure rate for TDDB in the technology should be calculated.
d. TCV fast test structure requirements. The structures to be used for the fast test reliability monitoring of hot electron
aging should be included in the TCV program so that correlations of the fast-test measurements with the accelerated
aging results may be made.
NOTE: It is strongly recommended that fast test intrinsic reliability structures for electromigration and TDDB be
included in the TCV program so that correlations can be made with longer term aging experiments. It is likely that
these structures shall be required for wafer acceptance in the future.
e. Ohmic contact degradation. The TCV should have a structure for assessing the degradation of ohmic contacts with
time at temperature, especially for gallium arsenide (GaAs).
f.
Sidegating/backgating. A structure should be included for evaluating sidegating/backgating of field effect transistor’s
(FET's) in GaAs technology.
g. Sinking gate. A FET structure should be included for evaluating the sinking gate degradation mechanism and other
channel degradation mechanisms of GaAs FET's.
h. Threshold voltage instability, including Negative Bias Temperature Instability (NBTI) for 130 nm and smaller CMOS
technologies. The NBTI test structure evaluates the effect due to interface traps (oxide energy states) in the gate
oxide that form under DC inversion stress. Holes in the PMOS devices are known to interact with these traps more
easily than electrons, and so this is a PMOS dominated mechanism. These trapped holes cause the threshold
voltage (VTH) of the affected transistor to shift lower (more negative) with increasing temperature, degrading device
performance.
H.3.2.2.3 Assembly and packaging. The manufacturer should list the assembly and packaging processes (die-attachment,
wire/ribbon bonding, seal molding and part marking) that is expected to be listed on the QML and used in QML microcircuit
assembly (see H.3.2.1.5).
H.3.2.2.3.1 Assembly process technology. New assembly process technologies shall be characterized to determine the
mechanical and thermal performance. The technology's susceptibility to intrinsic reliability failure mechanisms shall be
characterized to determine potential failure modes. The characterizations may include performance of thermal stresses at
multiple temperature levels to develop derating curves. Tables H-IA and H-IB identify the assembly process qualification testing
which shall be addressed for the technology being used.
H.3.2.2.3.2 Packaging technology. The manufacturer shall address package design/construction quality and reliability.
The manufacturer is responsible to maintain documented validation of all characterization methods used, including all
supporting data (see H.3.2.1.1.3). Tables H-IIA and H-IIB identify the key package characteristics for which testing shall be
addressed on each QML package technology.
166
MIL-PRF-38535K
APPENDIX H
H.3.2.2.4 Reliability assessment report. For class V or class Y (class level S) product, a reliability assessment report shall
be submitted to the QA for review and approval which demonstrates the successful completion and results of the assessment.
H.3.3 Transitional certification.
H.3.3.1 Transitional certification and qualification. Manufacturers may be granted transitional certification based on the
following requirements:
a. The manufacturer has qualifying activity (QA) approval that all facilities covered by the transitional certification
supply product built to the previously certified and qualified MIL-M-38510 product flows. Facilities not meeting
this condition are eligible for transitional certification, but they may require an audit if deemed necessary by
the QA.
If the manufacturer has never received MIL-M-38510 certification and qualification, but has been approved by DLA
Land and Maritime for class M products only, an audit of the facilities under QML consideration shall be required. If
these facilities have been audited by DLA Land and Maritime under the class M (SMD) random audit program, the
audit may not be necessary, as determined by the QA.
Facilities that have never been audited by DLA Land and Maritime are eligible for transitional certification and
an audit will be required unless the QA determines that an audit is not necessary.
b. The manufacturer should submit a plan for achieving full QML. The plan should include a self-assessment,
quality improvement plan, SPC plan, and a plan to upgrade any DLA Land and Maritime drawing or SMD part
to one part-one part number Q level devices.
c. The manufacturer should comply with all requirements of appendix A of this specification until the QA has
approved the manufacturer for full QML certification at which time the previous MIL-M-38510 (appendix A of
MIL-PRF-38535) requirements shall be superseded by the requirements of the main body of this specification
and all applicable appendices. As the manufacturer moves toward full QML certification, the QA can allow
variations to appendix A as part of the transition process. For class level S only, the manufacturer should
notify the space community (e.g., NASA, NRO, DTRA, and AFSMC) of any proposed major variations to
appendix A requirements. Further review by these organizations may be necessary before these variations
can be sanctioned.
d. Any major changes to the transitional certification lines should be approved by the QA until such time as the
QA approves the manufacturers TRB system and QM plan. This includes any deletion of test requests.
e. If any re-qualifications are required they should be in accordance with the guidelines of appendix A or as
approved by the QA.
The QML allowances given by this transitional certification shall be approved after the on-site verification and certification by
the QA, but prior to shipment of any product under this specification. In addition, the manufacturer shall make a commitment to
becoming QML certified for all portions of the process under transitional certification. If this commitment is not met, the QA
reserves the right to remove the transitional certification and all benefits associated with that certification.
NOTE: The transitional certification is not permanent (approximately 2 years maximum, unless extended by the QA) but allows
the manufacturer some flexibility while still working toward QML on the remainder of the processes committed to QML. No
class level S product shall be shipped until a full QA on-site certification is achieved.
167
MIL-PRF-38535K
APPENDIX H
H.3.4 Qualification.
H.3.4.1 Technology qualification. The process for qualification is outlined below and is further described in detail in the
subsequent sections.
a. Plan approval.
(1) Screening flow.
(2) Process performance characterization plans and data.
(3) Process qualification test plans and data.
(4) For class level B products, life test on a minimum of 1 wafer lot for 1000 hrs minimum at 125°C ambient, or
equivalent.
(5) For class level S products, long term life test shall meet the requirements of paragraph B.3.4, appendix B, or
shall meet long term life test on a minimum of 1 wafer lot for 4,000 hours minimum at 125°C ambient, or
equivalent.
b. Report approval.
For initial technology qualification, a sufficient number of SEC devices is required, from wafers passing the wafer screen
requirements and randomly chosen and evenly distributed from three wafer lots for life testing and total ionizing dose (TID)
requirements (RHA products only). The testing shall be performed in accordance with MIL-PRF-38535 Groups A, B, C, D, and
E (if applicable) or to the agreed to alternatives and test optimizations defined in the QM plan. The number of SEC device
failures shall serve as a qualification benchmark for the technology. Failure analysis (FA) should be done on failed SEC's to
determine each failure category and action taken to correct any problems found. The SEC reliability data, including FA results,
should be available for review by the QA. For RHA environments, irradiate SEC to demonstrate radiation hardness assurance
capabilities limit (RHACL).
For new class level S product, if the technology is mature at other levels, the manufacturer may provide a
supplemental/alternative data submittal to the QA for the reliability demonstration above. The alternative data submittal may
include, but is not limited to the following:
a. Historic product shipment summary - total quantity shipped of similar product/family on same process.
b. Field returns summary. (NOTE: Proprietary information such as program names and individual customer names shall
not be revealed.)
c. Reliability summary data - from the reliability monitor program & Failure rate calculation.
d. Historic qualification data - from similar product(s) from the same process family.
e. Examples of process monitors and data showing performance & trends from recent lots.
f. Examples of wafer lot acceptance reports.
NOTES: For complex devices initial technology qualification, a sufficient number of SEC or actual devices are required, and
selected devices must pass wafer screen test requirements. The SEC or actual devices shall be chosen randomly and evenly
distributed from multiple wafers or multiple wafer lots or single wafer lot (with the approval of QA) for life testing, and for RHA
devices, total ionizing dose (TID) test and samples size shall meet the requirements of table C-I group E test herein and
TM 1019 of MIL-STD-883.
168
MIL-PRF-38535K
APPENDIX H
H.3.4.1.1 Process technology validation. The manufacturer shall perform sufficient technology qualification testing to
assure the devices supplied meet the minimum class level B or S performance requirements as described herein. The
manufacturer shall maintain documentation of qualification testing for review by the preparing or acquiring activity upon request.
H.3.4.1.2 Technology qualification eligibility. Design, wafer fabrication, assembly, and qualification testing of the
demonstration vehicles may begin before certification is granted. However, if deficiencies and concerns found during the
validation require changes to the process flows, the design, wafer fabrication, assembly, and testing shall be redone on the new
process flows. In all cases, start of the qualification testing should begin no later than 6 months after the letter of certification is
received in order to retain the manufacturer's initial certification. Completion should be achieved in a timely manner or
recertification may be necessary.
H.3.4.1.3 Demonstration vehicles. Demonstration vehicles shall be produced on the certified manufacturing line as
defined in the QM plan submitted during the certification process. These demonstration vehicles should be of such complexity
as to be representative of the microcircuits to be supplied by the manufacturer. The demonstration vehicles will be assembled
in packages that are representative of manufacturer technology and shall be screened to the appropriate QML classes Q or V
or Y flow, including all applicable test alternatives and test optimizations. Each demonstration vehicle shall operate and meet
all performance requirements of the device specification and RHACL for a radiation hardened process.
NOTES: For a technology which has a die as its primary product, the demonstration vehicle should be suitably packaged to
allow evaluation of the technology without adversely affecting the outcome of the tests.
H.3.4.2 Technology qualification test plan. The manufacturer shall submit a qualification test plan which details the test
flow, test limits, test data to be measured, recorded and analyzed, test sampling techniques, and traceability records. The test
plan should detail materials, manufacturing construction techniques (including design CAD tools), testing and reporting
techniques and should be made available to the qualifying activity at the time of certification. The test plan should include
traceability documentation, milestone charts and the proposed demonstration vehicle descriptions. All test limits should be in
accordance with the requirements of the SMD. All demonstration vehicles shall be representative of the manufacturing and
screening processes. For class level S product new technology items, the plan shall include any screening tests or additional
qualification tests required as a result of the characterization and physics-of-failure evaluations.
169
MIL-PRF-38535K
APPENDIX H
H.3.4.3 Wafer fabrication technology validation. A manufacturer should have an SEC for the technology or process being
considered for certification. A manufacturer's SEC should be used to demonstrate fabrication process reliability for the
technology. The SEC design documentation should address: The design methodology, the software tools used in the design,
the functions it is to perform, its size in terms of utilized transistor or gate count, and simulations of its performance.
Documentation procedures for the SEC and standard production devices should be the same so that correlation can be made.
The SEC may be designed solely for its role as a quality and reliability monitoring vehicle or it may be a standard product. (For
RHA environment, see appendix C.) The SEC should address the following requirements:
a. Complexity. The complexity of the SEC for digital microcircuits should contain, as a minimum, one-half the number of
transistors expected to be used in the largest microcircuit to be built on the QML line. Digital ASICs should include
one or more test vehicles or SEC that represents all the cells types including memory, and operates at a minimum of
75% of the intended product frequency for burn-in and electrical tests. For analog microcircuits, the SEC should
exercise the functionality of the process technology flow, be of a representative complexity and be comprised of major
circuit element types.
b. Functionality. The SEC should contain fully functional circuits capable of being tested and screened in a manner
identical to the QML microcircuits.
c. Design. The SEC should be designed to stress the design capabilities of the process (see H.3.2.1.1.1c). The
architecture of the SEC should be designed so that failures can be easily diagnosed.
d. Fabrication. The SEC should be processed on a wafer fabrication line that is intended to be, or already is, a certified
QML line.
e. Packaging. The SEC should be packaged in a package qualified in accordance with requirements in 3.4.1.4.1 herein.
NOTES: A different SEC may be required whenever the design rules, the materials, the basic processes, or the basic
functionality of the technology differ.
H.3.4.4 Assembly/Packaging technology validation. The manufacturer shall demonstrate the capability of the assembly
and package processes by qualifying the SEC package or actual product to the package certification and qualification
procedures. The manufacturer shall document how packages used in the manufacture of QML products are grouped together
as a package family for qualification and change control purposes. The technology qualification demonstration shall be
conducted on samples pulled from minimum of 3 different assembly lots for assembly/process technology validation. The
qualification testing shall be conducted in accordance with MIL-PRF-38535 Groups A, B, and D or to the agreed to alternatives
and test optimizations defined in the QM plan.
170
MIL-PRF-38535K
APPENDIX H
H.3.4.4.1 Package integrity demonstration test plan (PIDTP) . Manufacturability, test, quality and reliability issues unique to
specific non-traditional assembly/package technologies intended for space applications shall be addressed in a Package
Integrity Demonstration Test Plan at the start of the package design cycle. The PIDTP shall be approved by QA after
consultation with the space community. The technologies requiring such a plan are: a) non-hermetic packages (e.g., class Y),
b) flip-chip assembly, and c) solder terminations. Microcircuits employing more than one of these technologies shall include
elements for each in the PIDTP.
H.3.4.4.1.1 Non-Hermetic packages. For class Y microcircuits, the PIDTP must address issues unique to non-hermetic
construction and materials, such as potential materials degradation, moisture absorption, and resistance of active devices,
passive devices and interconnects to environmental effects and processing stresses. Moisture sensitivity level characterization
(ref: IPC/JEDEC J-STD-020D) shall be performed for exposed flip-chip underfill or thermal grease/epoxy.
H.3.4.4.1.2 Flip-chip assembly. For space microcircuits employing flip-chip assembly technologies either class V or class Y
(class level S), the PIDTP must address the materials and processes unique to solder bump interconnect attach, underfill and
lid-to-die attach. The plan shall demonstrate as a minimum, how the following are evaluated and monitored including a
corresponding package level reliability demonstration:
1) Substrate materials. The substrate materials shall be documented in the PIDTP, and shall include landing pad
composition.
2) Bump geometry. The solder bump geometry shall be documented in the PIDTP, and shall include bump height, bump
diameter and bump pitch, as well as a description of the under bump metallurgy (UBM) shape, size and thickness.
3) Solder bump deposition process and materials. The solder bump deposition process shall be documented in the
PIDTP (e.g., plated, evaporation, solder paste), along with the solder alloy. In addition, the UBM deposition process (e.g.,
plated, evaporation, sputtered) and composition shall be documented in the PIDTP.
4) Flux materials. The flux type (e.g., no-clean, water soluble) and materials employed for solder bump interconnect
reflow shall be documented in the PIDTP.
5) Underfill materials. Underfill materials shall be documented in the PIDTP. All underfill materials shall meet MIL-STD-
883 TM 5011 requirements and outgassing requirement shall meet ASTM E595 test method.
6) Lid attach/adhesive materials. If a lid or heat spreader is attached to the back of a microcircuit die, the lid
attach/adhesive materials shall be documented in the PIDTP. All lid attach/adhesive materials shall meet the requirements of
TM 5011, MIL-STD-883, and outgassing requirements shall meet the test method ASTM E595.
7) Flip chip bump shear test. For flip chip, a bump shear test shall be performed in accordance with JEDEC JESD22-
B117 or equivalent to determine the shear strength of the solder bumps for initial qualification as a part of the wafer bump
technology qualification and shall be documented to the PIDTP.
H.3.4.4.1.3 Solder terminations. For space use microcircuits employing solder terminations (class V or class Y), the PIDTP
shall address the materials and processes unique to solder terminations, such as ball/column integrity, attachment integrity,
damage due to test, protection for shipment and shelf life. The manufacturer shall perform post column attachment electrical
characterization over temperature and compare data with pre-column attachment process to assess any changes due to the
column attachment process.
171
MIL-PRF-38535K
APPENDIX H
TABLE H-IA. Assembly process technology testing for hermetic and non-hermetic packages.
MIL-STD-883 test method and condition or JEDEC test method 1/
Process
Group
number
Hermetic packages
Non-hermetic packages
1
Die-attach and Where applicable
Where applicable
interconnect
a. Thermal shock TM1011
condition C, 100 cycles
a. Thermal shock TM1011
condition C, 100 cycles
b. End-point electricals test - In accordance
with device specification
c. Radiography (X-ray) TM 2012
or
b. End-point electricals test - In accordance
with device specification
c. Radiography (X-ray) TM 2012
or
C-SAM - TM 2030
C-SAM - TM 2030
d. Bond strength TM 2010
(die-mount and wire bond) plus
Die cracks TM 2011
d. Bond strength TM 2010
(die-mount and wire bond) plus
For die cracks TM 2011
e. Die shear or stud pull TM 2019 or TM 2027 e. Die shear or stud pull TM 2019 or TM2027
f. Flip chip die pull off test TM 2031
(before underfill dispense)
f. Flip chip die pull off test TM 2031
(before underfill dispense)
g. Underfill/epoxy TM 5011
g. Underfill/epoxy TM 5011 and
ASTM E595 for outgassing.
h. Flip chip die shear test TM 2019 or TM 2027 h. Flip chip die shear test TM 2019 or
(after underfill cured)
TM 2027 (after underfill cured)
2
Die-attach,
Where applicable
Where applicable
interconnect
a. Mechanical shock TM 2002, condition B
a. Mechanical shock TM 2002, condition B
b. Variable frequency vibration TM 2007,
condition A
and seal test b. Variable frequency vibration TM 2007,
condition A
c. Constant acceleration TM 2001
d. Fine and gross leak TM 1014
e. Visual inspection TM 1010,
(visual criteria 20X of magnification)
f. End-point electricals test - In accordance with
device specification
c. Constant acceleration TM 2001
d. Not applicable
e. Visual inspection TM 1010,
visual criteria 20X of magnification
f. End-point electricals test - In accordance
with device specification
Internal water vapor TM 1018
Lid seal
3
4
5
Not applicable
(5,000 ppm maximum at +100°C)
Where applicable
Lid seal
Where applicable
Lid torque (glass seal) TM 2024
Lid torque (glass seal) TM 2024
Code marking Where applicable
Resistance to solvents TM 2015
Where applicable
Resistance to solvents TM 2015
6
7
Final package High temperature Storage TM 1008
High temperature Storage TM 1008
(1,000 hours at +150°C)
testing
(1,000 hours at +150°C)
Post burn-in
lead finish
Where applicable
Solderability TM 2003
solder temperature (+245°C ± 5°C )
Where applicable
Solderability TM 2003
solder temperature (+245°C ± 5°C )
1/
The test methods are listed herein to give the manufacturer an available method to use. Alternate procedures or test
methods may be used.
172
MIL-PRF-38535K
APPENDIX H
TABLE H-IB. Assembly process technology testing for plastic packages . 1/
Group number
1
Process
Test
MIL-STD-883 test method or
industry standard
Die-attach and
interconnect
a. In-line visual inspection
b. In-line bond strength
c. In-line ball bond shear
d. In-line die shear/stud pull
e. Post molding X-ray
a. TM 2010 (die-mount and wire bond)
b. TM 2011
c. ASTM F1269
d. TM 2019 or TM 2027
e. TM 2012
2
3
Die-attach,
interconnect, and
molding
a. Radiography (X-ray)
a. TM 2012 (die-mount and wire bond)
b. TM 2030
b. C-SAM (ultrasonic inspection) etc.
Die-attach,
interconnect, and
molding
a. Temperature cycling
(1,000 cycles)
a. TM 1010 condition C or
JESD22-A104
b. End-point electricals
b. In accordance with device
specification
4
Die-attach,
interconnect, and
molding
a.Thermal shock
(100 cycles)
a.TM 1011 condition C or
JESD22-A106 condition C
5
6
Marking
Resistance to solvents
TM 2015
Storage conditions
High temperature storage
TM 1008,
1,000 hours at +150°C
7
Post burn-in lead
finish
Solderability
TM 2003
solder temperature (+245°C ± 5°C )
1/ The test methods are listed herein to give the manufacturer an available method to use. Alternate procedures or test
methods may be used.
173
MIL-PRF-38535K
APPENDIX H
TABLE H-IIA. Technology characterization testing for hermetic and non-hermetic packages .
MIL-STD-883 test method and condition or JEDEC test method
Process
Group
number
Hermetic packages
Non-hermetic packages
1
2
Dimension
1/
Physical dimension TM 2016
Physical dimension TM 2016
Where applicable
a. Thermal shocks TM 1011,
condition C, 15 cycles
Where applicable
a. Thermal shocks TM 1011,
condition C, 15 cycles
Resistance to moisture
b. Temperature cycles TM 1010,
condition C, 100 cycles
b. Temperature cycles TM 1010,
condition C, 100 cycles
c. Moisture resistance TM 1004,
unbiased condition
c. HAST(Biased) JESD22-A110
d. Visual inspection TM 1010 and
TM 1004 visual criteria
d. Visual inspection TM 1010 and
TM 1004 visual criteria
e. Fine and gross leak TM 1014
e. Not applicable
Where applicable
Salt atmosphere TM 1009,
condition A
Where applicable
Salt atmosphere TM 1009,
condition A
3
4
Susceptibility to corrosion
Leads
Where applicable
Where applicable
Lead integrity TM 2004,
condition A, B2 or D
Lead integrity TM 2004,
condition A, B2 or D
For pin grid array TM 2028
For pin grid array TM 2028
For BGA (ball shear) - JESD22-B117
For CGA (Column pull test) TM 2038
For BGA (ball shear) - JESD22-B117
For CGA (Column pull test) TM 2038
5
6
Susceptibility to electrostatic
discharge (ESD) sensitivity 2/
ESD TM 3015 or JESD 22-A114
ESD TM 3015 or JESD 22-A114
Where applicable
Latch-up test JESD78 or
Manufacturers internal procedures
Where applicable
Latch-up test JESD78 or
Manufacturers internal procedures
Susceptibility to latch-up
7
8
Thermal resistance
Thermal characteristics
TM 1012
Thermal characteristics
TM 1012
TM 5011 and
Underfill/epoxy materials
TM 5011
For outgassing ASTM E595
Per approved PIDTP
BGA/CGA packages:
Ball/Column attachment
Per approved PIDTP
9
1/ Performed as either characterization or as part of qualification.
2/ ESD classification level is as defined within test method 3015.
174
MIL-PRF-38535K
APPENDIX H
TABLE H-IIB. Technology characterization testing for plastic packages .
Group
number
MIL-STD-883 test method
or industry standard
Process
Dimensions
Test
1
2
Physical dimension
TM 2016 1/
Resistance to moisture
a. Preconditioning Electrical test
a. In accordance with device specification.
2/
b. Biased HAST
b. JESD22-A110 3/
(500 hours, +130°C , 85% RH)
c. In accordance with device specification.
c. End-point electricals test
Salt atmosphere
3
4
Susceptibility to corrosion
TM 1009
Susceptibility to leakage and
corrosion
Autoclave (no bias)
(pressure pot) 2 atm., +121°C
JESD22-A102
(data to be provided for 96 hours and
168 hours)
5
6
Leads
Lead integrity
TM 2004, condition A, B2 or D
a. 168 hours at +85°C/85% RH or bake +
minimum guaranteed time at
+30°C /60% RH
b. Vapor phase (+219°C , no preheat) or
Infrared (+240°C maximum)
c. Cross-section at 1000X, ultrasonic
(C-SAM) etc. TM 2030
Susceptibility to moisture
induced cracking at reflow
soldering for surface mount
and applicable through hole
packages
a. Moisture intake
b. Reflow simulation
c. Inspection for Delamination
and cracks
7
8
Safety
Flammability
ASTM G21
UL 94, ASTM D2863
Fungus resistance
Required only if fungus is a concern
9
Susceptibility to electrostatic
discharge (ESD) sensitivity
ESD
TM 3015 or JESD22-A114 4/
JESD78 or manufacturers internal
procedures
Susceptibility to latch-up
Thermal resistance
Latch-up test
10
11
Thermal characteristics
TM 1012
1/ Performed as either characterization or as part of qualification.
2/ The manufacturer shall define a "preconditioning" procedure that simulates board assembly of plastic surface mount
devices. This procedure should include moisture intake and reflow simulation. Exposure to soldering fluxes (possible
source of corrosiveness) and to board cleaning agents is also recommended for preconditioning the devices.
3/ Five hundred hours of highly accelerated stress testing (HAST) is preferred but the qualifying activity shall consider the
manufacturers overall processing and testing to evaluate this requirement. The actual HAST hours or alternate testing
shall be included in the QM plan.
4/ ESD classification level is as defined within test method 3015.
175
MIL-PRF-38535K
APPENDIX H
H.3.4.5 Technology qualification report approval . The technology qualification report that demonstrates successful
compliance to the qualification test plan, and shall be submitted to the QA for their review and approval.
H.3.4.6 Qualification test report. The manufacturer should present to the qualifying activity (QA) an analysis of the
qualification data. The aim of this analysis is to show that all process variables are under control and repeatable within the
certified technology and that parametric monitor, TCV, and SEC data monitoring are adequate and correlatable to the process.
The QA should be notified of any improvements/changes to the certified QML technology flow as a result of evaluating the
qualification testing data. The following data, if applicable, should be addressed and retained by the manufacturer to support the
results:
a. Simulation results from the design process (can be reviewed during the validation).
b. Parametric monitor test data.
c. Results of each subgroup test conducted, both initial and any resubmissions.
d. Number of devices tested and rejected.
e. Failure mode and mechanism for each rejected device.
f. Read and record variable data on all specified electrical parameter measurements.
NOTE: Specified electrical tests from a serialized, random sample (minimum of 22 devices) may be used to satisfy this
requirement. The manufacturer may submit variables data in histogram format giving mean and standard deviation or
equivalent for passing microcircuits.
g. Where delta limits are specified, variable data, identified to the microcircuit serial number, should be provided for initial
and final measurements.
h. For physical dimensions, the actual dimension measurements on three randomly selected microcircuits, except where
verification of dimensions by calibrated gauges, overlays, or other comparative dimensions verification devices is
allowed.
i. For bond strength testing, the forces at the time of failure and the failure category, or the minimum and maximum
readings of the microcircuits if no failures occur.
j. For die shear or stud pull strength testing, the forces at the time of the failure and the failure category, or the die shear
or stud pull reading if no separation occurs.
k. A copy of the test data on nondestructive bond pull testing as required by TM 2023 of MIL-STD-883.
l. For RHA testing, pre-test and post-test end-point electrical parameters, transient and single event phenomenon (SEP)
response and test conditions (if applicable).
m. For lid torque strength testing, the forces at the time of failure or the actual torque, if no separation occurs.
n. For internal water vapor content readings, report all gases found.
o. Copy of burn-in circuits.
H.3.4.7 Qualification test failures. If any particular testing results are not successful, the manufacturer should perform
failure analysis and take necessary corrective action. The manufacturer should notify the qualifying activity of any decision not
to pursue qualification of any material or manufacturing construction technique previously certified. After corrective actions
have been implemented, qualification testing should restart.
176
MIL-PRF-38535K
APPENDIX H
H.3.4.8 Product qualification (extension from existing qualified technology) . If the manufacturer wants to qualify additional
product types from previously QA approved process technologies, the qualification plan shall reference the process technology
information (physics-of-failure, description, etc.) and define the specific characterization, screening, and qualification tests
required for the new product including the life test duration, conditions, and rationale.
a. Product Qualification (Extension from existing qualified process technology)
1) Plan approval
i) Screening flow
ii) Product performance characterization plans and data
iii) Product qualification test plans and data
iv) 1,000 hour life test or equivalent
2) Report approval
b. Product qualification for multi-product wafer (MPW):
1)
2)
When qualifying product from a multi-product wafer (MPW), the manufacturer’s shall determine whether each
product design shall receive all qualification testing separately, or whether commonality of designs shall allow
extension to the other designs on the MPW. Each microcircuit design to be used as an SEC or product shall
receive the full applicable QML approved screening flow.
If any MPW microcircuit design is to be considered for qualification by extension then a technical analysis of the
designs shall be documented and approved by the TRB to determine which design is worst case and
representative of the other microcircuit designs on the same wafer. Microcircuit designs with different levels of
circuit spacing (e.g., digital logic vs. memory cell) or different functionality (e.g., analog to digital converter vs.
transceiver) must be qualified separately.
3)
The following areas shall be evaluated as a minimum to determine if a worst case design is representative of the
MPW for the identified qualification test methods of MIL-STD-883.
i) SEM inspection shall be performed in accordance with TM 2018, (class level S only): Worst case
representative design only.
ii) Life test shall be performed in accordance with TM 1005; Full qualification sample on worst case
representative design only and 5 (five) pieces sample on all other designs also be tested.
iii) Total Ionizing Dose (TID) test shall be performed in accordance with TM 1019; Dose rate Latch-up test
shall be performed in accordance with TM 1020, and Dose rate Upset shall be performed in accordance
with TM 1021 (If applicable): Full qualification sample on worst case representative design and 5 (five)
pieces sample on all other designs.
iv) Electrostatic Discharge (ESD) sensitivity test shall be performed in accordance with TM 3015; Capacitance
in accordance with TM 3012; and Electrical Latch-up: Each buffer type shall be tested for initial
qualification or buffer design changes.
v) Single Event Effects (SEE) test shall be performed in accordance with JESD57 (If applicable):
Manufacturer’s shall test each cell type potentially susceptible for initial qualification or cell design changes.
177
MIL-PRF-38535K
APPENDIX H
H.3.5 Standard microcircuit drawings (SMDs) . SMD depicts the Government's requirements for an existing commercial
item, tested for a military application, disclosing applicable configuration, envelope dimensions, mounting and mating
dimensions, interface dimensional characteristics, specified performance requirements, and inspection and acceptance test
requirements as appropriate for a military environment. The general steps of SMD preparation by the preparing activity (PA)
are as follows:
a. Draft Development
b. User Coordination
c. SMD Release
H.3.6 Listing of microcircuits on the Qualified Manufacturer’s List (QML) . To be listed on the QML for this specification,
the manufacturer shall demonstrate compliance to the QML certification requirements (see 3.4.1), demonstrate compliance to
the QML qualification requirements (see 3.4.2), and work with the PA, the DLA Land and Maritime, to develop a SMD
describing the candidate QML device(s) (see 3.5).
Upon approval of the final draft of the SMD, the manufacturer shall submit a completed certificate of compliance (C of C)
to DLA Land and Maritime. Acceptance of the C of C by the qualifying activity results in the device being listed on the QML
and provides authority for the manufacturer to ship the QML devices in accordance with the SMD.
Manufacturers are officially QML qualified to a given SMD when the SMD is dated and the C of C and qualification report is
approved by the QA. Manufacturers are able to ship SMD devices upon being QML qualified to the given SMD. Manufacturers
will receive notification of approval from the QA.
178
MIL-PRF-38535K
APPENDIX H
(This page intentionally left blank.)
179
MIL-PRF-38535K
APPENDIX J
TECHNOLOGY CONFORMANCE INSPECTION AND SCREENING INFORMATION
J.1 SCOPE
J.1.1 Scope. The qualified manufacturer listing (QML) program measures and evaluates the manufacturers'
manufacturing process against a baseline for that process. This baseline can include innovative and improved
processes that result in an equivalent or higher quality product, provided that the process used to evaluate and
document these changes has been reviewed and approved. Changes to the process baseline can be made by the
manufacturer's Technology Review Board (TRB) after achieving QML status with documented reliability and quality
data. The approach outlined in this appendix is a proven baseline which contains details of the screening and
technology conformance inspection (TCI) procedures. This appendix is a mandatory part of the specification. The
information contained herein is intended for compliance. However, for QML microcircuits the manufacturers may
offer approved alternatives that demonstrate a process control system that achieves at least the same level of quality
and reliability as could be achieved by this appendix.
J.2 APPLICABLE DOCUMENTS
J.2.1 General. The documents listed in this section are specified in section J.3 of this appendix. This section does
not include documents cited in other sections of this appendix or recommended for additional information or as
examples. While every effort has been made to ensure the completeness of this list, document users are cautioned
that they must meet all specified requirements of documents cited in section J.3 of this appendix, whether or not they
are listed.
J.2.2 Government documents.
J.2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
- Test Method Standard Microcircuits.
(Copies of these documents are available online at http://quicksearch.dla.mil/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
J.2.3 Non-Government publications. The following documents form a part of this document to the extent specified
herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
TechAmerica
EIA557
- Statistical Process Control Systems.
(Copies of these documents are available online at http://www.techamerica.org or from TechAmerica,
601 Pennsylvania Ave., NW, North Building, Suite 600, Washington DC 20004-2650.)
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JEP121
- Requirements for Microelectronic Screening and Test Optimization.
(Copies of these documents are available online at http://www.jedec.org or from JEDEC – Solid State Technology
Association, 3103 North 10th Street, Suite 240–S, Arlington, VA 22201-2107.)
J.2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein(except for related specification sheets), the text of this
document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless
a specific exemption has been obtained.
180
MIL-PRF-38535K
APPENDIX J
J.3 TCI AND SCREENING INFORMATION
J.3.1 Mask requirements (when applicable). If the mask shop is internal to the manufacturing organization, all
designs shall be checked for errors utilizing appropriate design rule checkers before start of the mask making. Before
use, the mask shall be inspected for flaws and errors. The final photolithographic mask to be used for QML
microcircuit wafer fabrication shall be compliant with the critical dimensions. Measurements shall show that the
pattern sizes and positions are consistent with the design rules. All masks shall be maintained under an inventory
control program which outlines the inspection and the release of masks to fabrication, recording of usage, cleaning
cycles, and maintenance repair. All conditions for removal of masks from inventory shall be documented.
J.3.1.1 Wafer fabrication process. The wafer fabrication process shall be monitored and controlled using a
standard evaluation circuit (SEC), technology characterization vehicle (TCV) or alternate assessment procedure, and
parametric monitors (PMs) in accordance with 3.4.1. The wafer fabrication sequence to produce finished wafers shall
be established with processing limits for each wafer fabrication step. Specific items to be addressed are detailed
below:
Procedure
Paragraph
Traceability
3.11
Lot travelers
As required (TRB determined)
A.3.5.5, A.3.5.8
H.3.2.1.3.2
C.3.4.1.3, H.3.2.1.2, H.3.2.1.4
C.3.4.1.2, H.3.4.3
H.3.2.2.2.1
Glassivation/passivation
Parametric monitors
Wafer acceptance
Standard evaluation circuits
Technology characterization vehicles
Rework
In accordance with QM plan
Internal conductors and metallization thickness In accordance with applicable design rules
J.3.2 Assembly process procedures. The following assembly process procedures shall be used, as applicable, to
assemble QML microcircuits. The manufacturer shall control all phases of the assembly line to ensure that
contamination from any source or equipment operation and human intervention does not degrade the reliability of the
assembly process or QML microcircuit. Specific items to be addressed are shown below:
Assembly and package procedure
Incoming inspection
Paragraph
H.3.2.1.5.b.6
Eutectic die attach
Non-eutectic die attach
TM 2010 of MIL-STD-883, H.3.2.1.5.1
TM 2010, TM 5011 of MIL-STD-883, H.3.2.1.5.1
(as applicable)
Internal visual
Hermeticity
Handling (electrostatic discharge (ESD))
Human contamination
Rework
TM 2010 of MIL-STD-883, 3.4.1.4 w
TM 1014 of MIL-STD-883, TM 1018 of MIL-STD-883
G.3.3.1 p or 3.4.1.4 v herein
3.4.1.4 x
J.3.2.1
Internal water vapor content
Wire bonding
TM 1018 of MIL-STD-883
3.4.1.4 q herein
J.3.2.1 Assembly rework requirements. All QML microcircuit rework procedures shall be certified and documented
in the quality management (QM) plan.
J.3.3 Internal visual inspection. Internal visual inspection shall be performed to the appropriate level of TM 2010 of
MIL-STD-883 Microcircuits awaiting pre-seal inspection, or other accepted, unsealed microcircuits awaiting further
processing shall be stored in a dry, inert, controlled environment until sealed. Alternate procedures, such as those
provided in TM 5004 of MIL-STD-883 or some other TRB approved alternate, may be used. For gallium arsenide
(GaAs) devices only, TM 5013 of MIL-STD-883 should be used.
181
MIL-PRF-38535K
APPENDIX J
J.3.4 Constant acceleration. All microcircuits shall be subjected to constant acceleration, except as modified in
accordance with 4.2 in the Y1 axis only, in accordance with TM 2001 of MIL-STD-883, condition E (minimum).
Microcircuits which are contained in packages that have an inner seal or cavity perimeter of two inches or more in
total length, or have a package mass of five grams or more, may be tested by replacing condition E with condition D
in TM 2001 of MIL-STD-883. For packages that cannot tolerate the stress level of condition D, the manufacturer shall
have data to justify a reduction in the stress level. The reduced stress level shall be specified in the manufacturers
QM plan. The minimum stress level allowed in this case is condition A.
J.3.5 Burn-in. Burn-in shall be performed on all QML microcircuits, except as modified in accordance with section
4.2, at or above their maximum rated operating temperature (for devices to be delivered as wafer or die, burn-in of
packaged samples from the lot shall be performed to a quantity accept level of 10(0)). For microcircuits whose
maximum operating temperature is stated in terms of ambient temperature (TA), table I of TM 1015 of MIL-STD-883
applies. For microcircuits whose maximum operating temperature is stated in terms of case temperature (TC), and
where the ambient temperature would cause TJ to exceed +175°C, the ambient operating temperature may be
reduced during burn-in from +125°C to a value that will demonstrate a TJ between +175°C and +200°C and TC equal
to or greater than +125°C without changing the test duration. Data supporting this reduction shall be available to the
acquiring and qualifying activities upon request.
J.3.6 Final electrical measurements. Final electrical testing of microcircuits shall assure that the microcircuits
tested meet the electrical requirements of the device specification and shall include the tests of table III, group A,
subgroups 1, 2, 3, 4 or 7, 5 and 6 or 8, and 9, 10, and 11, unless otherwise specified in the device specification.
J.3.7 Seal (fine and gross leak) testing. Fine and gross leak seal tests shall be performed, as specified in 4.2,
between temperature cycling and final electrical testing after all shearing and forming operations on the terminals in
accordance with TM 1014 of MIL-STD-883.
J.3.8 Pattern failures. Pattern failure criteria may be used as an option for any screen provided that pre burn-in
testing is done. When acceptance is based on pattern failures (multiple device failures - two or more caused by the
same basic failure mechanism) shall apply as specified in the acquisition document. If not otherwise specified, the
maximum allowable failures shall be five devices for each failure pattern established. Accountability shall include
burn-in through final electrical test.
J.3.8.1 Pattern failure rejects. When the number of pattern failures exceeds the specified limits, the burn-in lot
shall be rejected. At the manufacturer's TRB option, the rejected lot may be resubmitted to burn-in one time
provided:
a. The cause of the failure has been determined and evaluated.
b. Appropriate and effective corrective action has been completed to reject all microcircuits affected by the
failure cause.
c. Appropriate preventive action has been initiated.
J.3.9 TCI. TCI testing shall be accomplished by the manufacturer on a periodic basis to assure that the
manufacturer's quality, reliability, and performance capabilities meet the requirements of the QM plan. The
manufacturer of QML microcircuits shall be certified by the qualifying activity to use one or a combination of both of
the TCI procedures described below. The two TCI procedures are end-of-line TCI (option 1, see J.3.10) and in-line
TCI testing (option 2, see J.3.11).
NOTE: All tests may not be appropriate for the technology (e.g., for wafer or die product, group B, subgroups 1
and 3 and group D do not apply). The manufacturer's TRB shall determine that the appropriate tests are
completed to assure conformance of the product to be delivered.
182
MIL-PRF-38535K
APPENDIX J
J.3.9.1 General. Any QML or SEC integrated circuit used for either TCI option (see J.3.10 or J.3.11) shall be
screened in accordance with 4.2.
J.3.9.2 TCI reporting. Summary of TCI tests analysis shall be submitted to the qualifying activity in accordance
with 3.9.1 requirements. If TCI requirements are not met, the TRB shall notify the qualifying activity immediately and
all products manufactured and delivered between the last TCI and the failed TCI shall be placed in suspect status.
The manufacturer shall analyze the failure, determine the reason for failure and submit a corrective action plan. An
assessment of whether to recall all suspect products shall be made by the TRB and the qualifying activity shall be
notified of the decision. Recertification and requalification of the QML line may be required based on the nature of
the problem and action taken by the manufacturer. Procedures for end-of-line TCI and in-line TCI testing for a QML
line are described in the following paragraphs.
J.3.9.3 Technology conformance inspection of multi-product wafer lots . If a Multi-Product Wafer (MPW) has been
qualified then TCI testing sampling plan must be documented based on the same criteria used to establish the
qualification criteria specified in section H.3.4.8.
a. SEM inspection shall be performed per TM 2018, (class level S only); Worst case representative design
only.
b. Life test shall be performed per TM 1005; Worst case representative design only and 5 pieces sample on all
other designs for class level S.
c. Total Ionizing Dose (TID) shall be performed per TM 1019; Worst case representative design only and
5 pieces sample on all other designs for class level S.
Note: If a test failure is encountered then all designs shall be reviewed to determine whether the test failure is related
to all designs or the specific design that failed the test. This analysis shall be applicable to burn-in PDA, qualification,
and TCI failures.
J.3.10 End-of-line TCI (option 1). End-of-line TCI testing shall be performed every TCI interval, as recommended
in table J-1 herein. Quality conformance inspection (QCI) requirements as detailed in TM 5005 of MIL-STD-883 may
be used, with qualifying activity (QA) approval, in place of the TCI requirements herein. Each end-of-line TCI vehicle
shall pass the end-of-line quality conformance. All groups A, B, and E (as applicable) testing shall be performed on
microcircuits to be delivered as QML microcircuits. Groups C and D testing shall be done on either the SEC or QML
microcircuits. Groups A, B, C, D, and E requirements are found in tables II through V and table C-I herein.
Group E inspection is required only for parts intended to be marked as radiation hardness assurance (RHA) (see
3.4.3). RHA TCI sample tests shall be performed at the level(s) specified and in accordance with appendix C. The
applicable subgroups of group E, (see appendix C) shall be performed when specified in the acquisition document.
The actual devices used for group E testing shall be assembled in a qualified package and, as a minimum, shall pass
table III, group A, subgroups 1, 7, and 9 at +25°C prior to irradiation.
NOTE: If a manufacturer elects to eliminate a TCI step by substituting an in-process control or statistical process
control procedure, the manufacturer is only relieved of the responsibility of performing the TCI operation associated
with that step. The manufacturer is still responsible for providing a product that meets all of the performance,
quality, and reliability requirements herein and in the device specification. Documentation supporting substitution
for TCI shall be retained by the manufacturer and available to the QA upon request.
Each group may contain individual subgroups for the purposes of identifying individual tests or groups of tests.
Subgroups within a group of tests may be performed in any sequence but individual tests within a subgroup (except
table II, group B, subgroup 2) shall be performed in the sequence indicated for groups B, C, D, and E tests herein.
Electrical reject devices from the same inspection lot may be used for all subgroups when electrical end-point
measurements are not required.
183
MIL-PRF-38535K
APPENDIX J
J.3.10.1 Group A inspection. Group A inspection shall be performed on each inspection lot and shall consist of
electrical parameter tests specified for the specified device. Group A inspection may be performed in any order.
J.3.10.2 Group B inspection. Group B inspection shall be performed on each inspection lot, for each qualified
package type and lead finish. Group B shall consist of mechanical and environmental tests for the specified device
class. Resubmission procedures shall be documented in the QM plan. For solderability, a statistical sound sample
size (sample sizes indicated in TM 5005 of MIL-STD-883 are acceptable, as a minimum) consisting of leads from
several packages shall be tested with zero failures. The actual number shall be determined by the TRB and detailed
in the TCI procedures in the QM plan.
J.3.10.3 Group C inspection. Group C inspection shall include die related tests specified which are performed
periodically. Resubmission procedures shall be documented in the QM plan. Where group C end-points are done on
actual devices, group C end-points shall be specified in the device specification.
J.3.10.4 Group D inspection. Group D inspection shall include package related tests which are performed
periodically. Resubmission procedures shall be documented in the QM plan. Where group D end-points are done on
actual devices, group D end-points shall be specified in the device specification.
J.3.10.5 Group E inspection. When applicable, group E inspection shall include RHA tests on each wafer lot. The
post-irradiation parameter limits (PIPL), transient, and single event phenomenon (SEP) response (as applicable), and
test conditions shall be as specified in the device specification.
J.3.10.6 End-point tests for groups C, D, (E if applicable). End-point measurements and other specified post-test
measurements shall be made for each sample after completion of all other specified tests in the subgroup. The test
limits for the end-point measurements shall be the same as the test limits for the respective group A subgroup
inspections. Different end-points may be specified for group E tests in the detail specifications. Any additional
end-point electrical measurements may be performed at the discretion of the manufacturer.
J.3.10.7 End-of-line TCI testing (option 1). All microcircuits used in end-of-line TCI testing that meet the
requirements of this specification and the device specification and are subjected to destructive tests or which fail any
test shall not be shipped on the contract or order as acceptable QML product. They may, however, be delivered at
the request of the acquiring activity, if they are isolated from, and clearly identified so as to prevent their being
mistaken for acceptable product. Sample microcircuits, from lots which have passed quality assurance inspections or
tests and which have been subjected to mechanical or environmental tests specified in groups B, C, and D inspection
and not classified as destructive, may be shipped on the contract or order provided the test has been proven to be
nondestructive (see A.4.3.2.3) and each of the microcircuits subsequently passes final electrical tests in accordance
with the applicable device specification.
J.3.11 In-line TCI testing (option 2). In-line control testing shall be performed through the use of the approved
SEC or QML microcircuit. The in-line control test plan shall show how all the groups A, B, C, D, and E test conditions
are incorporated under statistical process control or process control to allow in-line control monitoring. The following
shall also be addressed. Groups A, B, C, D, and E requirements are found in tables II through V and table C-I.
184
MIL-PRF-38535K
APPENDIX J
TABLE J-I. End-of-line TCI testing procedure (option 1). 1/
Table
TCI requirements
TCI vehicle
Actual device
Interval
Table III
Table II
Table IV
Table V
Table C-I
Group A electrical testing
Group B testing
Each inspection lot
Each inspection lot
Every 3 months
Every 6 months
Each wafer lot
Actual device
Group C testing
SEC or actual device
SEC or actual device
Actual device
Group D testing
Group E testing
1/ Each group may contain individual subgroups for the purposes of identifying
individual tests or groups of tests.
J.3.11.1 Group A electrical testing. Group A electrical testing shall be satisfied by in-line inspections performed in
accordance with the applicable procedure of MIL-STD-883 on actual devices.
J.3.11.2 Group C life tests. Life tests shall be performed on the SEC at intervals set by the TRB in the quality
management plan.
J.3.12 Test optimization requirements. The process used by the manufacturer to optimize testing utilizing the best
commercial practices available while still assuring all performance, quality and reliability requirements herein. All of
the applicable JEP121 process elements shall be addressed for test optimization. Any screen or TCI test prescribed
herein may be reduced, modified, moved, or eliminated by the QML manufacturer provided the following
considerations are addressed as a minimum.
a. Nodes critical to test outcome, called test critical nodes, have been identified and are in control in
accordance with TechAmerica EIA557.
b. Test critical nodes have exhibited sufficient capability to assure low product defect rates.
c. An understanding and control of assignable causes at test critical nodes.
d. The long term reliability of devices remains unaffected or is improved.
e. Low defect rates in the process and delivered product are maintained.
f.
Measurements taken for out of control conditions along with corrective actions are recorded and this data is
maintained for a time period consistent with data retention requirements herein.
g. Method and frequency for revalidation of optimized tests shall be defined in the manufacturer’s
documentation.
The manufacturer is expected to maintain the established process control and evaluate the effect on quality and
reliability of any out of control conditions that may exist at critical nodes. The manufacturer shall also evaluate if a
relationship exists between any optimized test and any field failure returns, take appropriate corrective actions, and
report this information as part of the TRB status reports. Regardless of testing modifications, the manufacturer shall
supply product capable of passing any screening or TCI/QCI test prescribed herein. As a part of the QML philosophy
and the conversion of customer requirements the manufacturer shall communicate variations in screening, end-of-line
testing with customers as appropriate. This information shall be available from the manufacturer and to the QA.
185
MIL-PRF-38535K
APPENDIX J
(This page intentionally left blank.)
186
MIL-PRF-38535K
INDEX
PARAGRAPH
Acceptance procedure
Acquiring activity
D.4.2.2
6.4.12
A.3.1.3.18
B.3.1.1
6.2
Acquiring activity
Acquiring activity
Acquisition requirements
Acquisition requirements
Additional reference documents
Additional reference documents
Additional sample
A.6.2
6.6
C.5.1
D.4.2.3
A.3.2.2
A.4.5.8.2
A.3.1.3.22
2.
Alternate die/fabrication requirements
Alternate group B failure
Antistatic
APPLICABLE DOCUMENTS
APPLICABLE DOCUMENTS
APPLICABLE DOCUMENTS
APPLICABLE DOCUMENTS
APPLICABLE DOCUMENTS
APPLICABLE DOCUMENTS
APPLICABLE DOCUMENTS
APPLICABLE DOCUMENTS
APPLICABLE DOCUMENTS
Approval of other lead finishes
Approval of other lead material
Assembly and packaging
Assembly process change
Assembly process procedures
Assembly processes
A.2
B.2
C.2
D.2
F.2
G.2
H.2
J.2
A.4.4.2.6
A.4.4.2.7
H.3.2.1.5
G.3.4.3
J.3.2
H.3.2.2.3.1
J.3.2.1
F.4.7.2.2
A.4.9.2.2
A.4.9.3.3
A.4.9.3.4
A.4.9.3.5
3.6.7.1
A.3.6.9.1
F.4.4
Assembly rework requirements
Attachability
Audit checklist
Audit deficiencies
Audit follow-up
Audit schedules and intervals
Beryllium oxide package identifier
Beryllium oxide package identifier
Bond
Bond process characterization
Bump
F.4.4.1
F.4.3
Burn in
A.4.6.1
J.3.5
Burn in
A.4.6.1.2
Burn in acceptance criteria
187
MIL-PRF-38535K
INDEX
PARAGRAPH
F.4.6.4
A.5.2.1
3.6.2.4
A.3.6.2.6
H.3
Burn-in
Carrier and container
Case outline
Case outline
CERTIFICATION
Certification marks
3.6.3
3.2.1
Certification of conformance and acquisition traceability
Certification of conformance and acquisition traceability
Change control procedures
A.3.3.1
3.3.4
G.3.4
Change control procedures
3.4.1.6
Change management system
Changes and notification of change to product or quality
assurance program
A.3.4.2
6.10
Changes from previous issue
Circuit design
H.3.2.1.1.1
6.4.31
Class B
A.3.1.3.34
A.3.6.3.1
A.3.1.3.35
6.4.27
Class level B
Class level B die fabrication date code
Class level S
Class M
6.4.28
Class N
6.4.29
Class Q
6.4.32
Class S
6.1.1
Class T
6.4.33
Class T
3.4.8.1
6.4.30
Class T radiation requirements
Class V
A.4.3.1
A.3.3
Classification of inspections and tests
Classification of requirements
Cleanliness and atmosphere control in work areas
Code for assembly sites
Compliance indicator/certification mark
Compliance validation
Conductive
A.4.8.1.1.7
3.6.4.1
A.3.6.7
A.3.4.1.1
A.3.1.3.23
A.3.1.2
B.3.2
Conflicting requirements
Conflicting requirements
Constant acceleration
Constant acceleration
Control and inspection of acquisition sources
F.4.7.2.4
J.3.4
A.4.1.2
A.4.1.3
Control and inspection records
Conversion of customer requirements into manufacturer's
internal instructions
A.4.8.1.1.1
Correction of deficiencies
A.4.9.3.1.1
Corrective action and evaluation
A.4.8.1.1.11
188
MIL-PRF-38535K
INDEX
PARAGRAPH
Country of origin
3.6.5
Country of origin
A.3.6.6
A.3.1.3.28
3.6.6
Custom microcircuit
Date code
Deficiencies and concerns
Definitions
3.4.1.7
A.4.9.2
D.3.1
Definitions
Delta limit
6.4.9
Delta limit (∆)
A.3.1.3.15
C.3.7
Demonstration vehicles
Demonstration vehicles
Design
H.3.4.1.3
C.3.4.1.1
H.3.2.1.1
A.3.5
Design
Design and construction
Design documentation
Design methodology change
Design requirements
Design verification
Design, material, and process change control
A.3.5.4
G.3.4.1
C.4.2
B.3.5
A.4.8.1.1.8
Design, processing, manufacturing equipment, and materials
instructions
A.4.8.1.1.6
A.4.8.1.1
F.4.7.2.3
A.4.3.2.2
A.4.9.3.1.2
A.3.6.2.5
3.6.2.3
Design, processing, manufacturing, and testing instructions
Destructive bond strength
Destructive tests
Deviation from critical documents
Device class
Device class designator
Device specification
Device specification
Device specification
Device type
3.5
A.3.1.3.33
A.3.6.2.3
6.4.15
Device type
A.3.1.3.20
A.3.6.2.4
A.3.4.1.2.3
A.3.2.2.2
A.3.1.3.29
A.3.5.4.2
A.3.5.7
Device type
Die attachment
Die evaluation requirements
Die family
Die intraconnection pattern
Die plating and mounting
Die thickness
A.3.5.9
Die to terminal interconnection
Die topography
A.3.5.4.3
A.3.5.4.1
6.4.16
Die type
Die type
A.3.1.3.21
189
MIL-PRF-38535K
INDEX
PARAGRAPH
Discontinuation of products
Discussion
3.3.4.1
6.5
Disposal of samples
Dissipative
A.4.3.2.1
A.3.1.3.25
A.4.1.6
3.6.2.2
A.3.6.2.8
A.4.3.6
A.3.2.1
6.4.18
Distributor inventory, traceability and handling control
Drawing designator
Drawing designator
Electrical test equipment verification
Electrical test requirements
Electrostatic discharge (ESD) sensitivity
Electrostatic discharge (ESD) sensitivity
Electrostatic discharge (ESD) sensitivity identifier
Electrostatic discharge (ESD) sensitivity identifier
Electrostatic discharge (ESD) sensitivity
Electrostatic discharge (ESD) sensitivity
Element (of a microcircuit or integrated circuit)
Element (of a microcircuit or integrated circuit)
Encapsulant
A.4.4.2.8
3.6.7.2
A.3.6.9.2
4.2.3
A.3.1.3.27
6.4.2
A.3.1.3.2
F.4.5
End of line TCI testing (option 1)
J.3.10.7
C.4.4.1
End point tests for group E
End point tests for groups B, C, and D (and E if applicable)
inspections
A.4.5.7
J.3.10.6
J.3.10
End point tests for groups C, D, (E if applicable)
End-of-line TCI (option 1)
End-of-line technology conformance inspection (TCI) testing
(option 1)
C.4.4
Environmentally preferable material
Equipment calibrations
ESD control
6.9
A.4.8.1.2.5
3.12
ESD handling control program
Example C of C
A.4.8.1.1.14
A.3.2.2.1
A.4.8.1.3.8
Examples of design and construction baseline
Examples of design, material, equipment, visual standard,
and process instructions
A.4.8.1.3.4
A.4.8.1.3.2
A.4.8.1.3.5
A.4.8.1.3.7
F.4.6.6
Examples of manufacturing flowchart
Examples of records
Examples of travelers
External visual
External visual screen
A.4.6.2
Fabrication process change
G.3.4.2
Failure analysis of burn in screen failures for class level S
devices
A.4.6.1.2.1
A.4.3.5.3
Failure and corrective action reports
Failure and defect analysis and feedback
Failure and defect reports and analyses
A.4.8.1.1.10
A.4.8.1.2.3
190
MIL-PRF-38535K
INDEX
PARAGRAPH
Failures
D.4.1.2
Figure 1.
Figure 2.
Figure F-1.
Figure G-1.
A.3.1.3.4
J.3.6.
FIGURE 1. The QML manufacturing line
FIGURE 2. Combinations of a manufacturing line
FIGURE F-1. Lead contact length
FIGURE G-1. Generic qualification flow diagram
Film microcircuit (or film integrated circuit)
Final electrical measurements
Final seal
6.4.11
A.3.1.3.17
A.3.5.6.3.1
6.4.25
6.4.24
A.4.3.3
6.4.26
A.4.8.1.3.1
2.1
Final seal
Finish thickness measurements
Fit
Form
Formation of lots
Function
Functional block organization chart
General
General
3.1
General
A.2.1
General
A.3.1
General
A.4.4.1
A.4.5.1
A.4.9.3
B.3.1
General
General
General
General
C.2.1
General
C.3.1
General
D.4.1
General
F.2.1
General
G.2.1
General
H.2.1
General
H.3.1
General
J.2.1
General
J.3.9.1
A.4.3
General inspection conditions
General operation flow
Glassivation
F.4.1
A.3.5.8
2.2
Government documents
Government documents
Government documents
Government documents
Government documents
Government documents
Government source inspection
Government source inspection (GSI)
A.2.2
C.2.2
F.2.2
H.2.2
J.2.2
A.3.4.7
A.4.1.4
191
MIL-PRF-38535K
INDEX
PARAGRAPH
Group A electrical testing
Group A electrical testing
Group A inspection
A.4.4.2.2
J.3.11.1
A.4.5.2
Group A inspection
F.4.7.1
Group A inspection
J.3.10.1
A.4.5.8.1
A.4.5.3
Group B failure
Group B inspection
Group B inspection
F.4.7.2
Group B inspection
J.3.10.2
A.4.4.2.3
A.4.5.8.3
F.4.7.3
Group B testing
Group C failure
Group C inspection
Group C inspection
J.3.10.3
A.4.5.4
Group C inspection for class level B only
Group C life tests
J.3.11.2
A.4.5.4.1
A.4.5.8.4
A.4.5.5
Group C sample selection
Group D failure
Group D inspection
Group D inspection
F.4.7.4
Group D inspection
J.3.10.4
A.4.5.5.1
A.4.5.6
Group D sample selection
Group E inspection
Group E inspection
J.3.10.5
A.4.5.6.1
A.4.4.2.5
A.4.4.2.4
F.4.7.4.1
A.3.5.6.3.4
A.3.1.3.4.2
A.3.6.3
Group E sample selection
Group E testing
Groups C and D testing
Highly accelerated stress testing (HAST)
Hot solder dip
Hybrid microcircuit
Identification codes
In line TCI testing (option 2)
In line TCI testing (option 2)
Incoming vendor material control program
C.4.5
J.3.11
A.4.5.5.2
A.4.8.1.1.12
3.6.1
Incoming, in process, and outgoing inventory control
Index point
Index point
A.3.6.1
Initial documentation and subsequent changes in design,
materials, or processing
A.4.8.1.2.4
A.3.4.1.2.1
A.4.1.1
Inspection by scanning electron microscope (SEM)
Inspection during manufacture
Inspection lot
6.4.6
Inspection lot - class level B
Inspection lot - class level S
A.3.1.3.8
A.3.1.3.7
192
MIL-PRF-38535K
INDEX
PARAGRAPH
Inspection lot identification code for class levels S and B
A.3.6.3.2
Inspection lot split - class level B
Inspection of incoming materials and utilities, and of work in
process
A.3.1.3.10
A.4.8.1.1.3
A.4.8.1.2.2
A.4.4.2.1
A.3.1.3.9
A.3.1.3.24
6.4.4
Inspection operations
Inspection routine
Inspection sublot - class level S
Insulating
Integrated circuit (microcircuit)
Intended use
6.1
Intended use
A.6.1
Internal conductors
A.3.5.5
A.3.5.11
A.3.5.5.3
J.3.3
Internal lead separation for class level S devices
Internal lead wires
Internal visual inspection
Internal visual screen
Internal wire size and material
Item requirements
F.4.6.2
A.3.5.5.2
3.2
Item requirements
A.3.2
Item requirements
F.3.4
Laser scribing
A.3.5.10
3.6.2.5
A.3.5.6.3.2
A.3.6.2.7
F.3.3
Lead finish
Lead finish
Lead finish
Lead finish
Lead finish designator
Lead forming
A.6.2.1
A.4.6.4
A.3.5.6.2
A.3.4.1.2.6
3.4.1.8
A.3.4.1.2.4
6.8
Lead or terminal material
Lead trimming and final lead finish thickness
Letter of certification
Lid seal
List of acronyms
Lot travelers
A.3.4.6.1
A.4.6.1.1
3.4.5
Lots and sublots resubmitted for burn in
Maintenance and retention of QML
Major changes
F.4.8
Management and technology validation
Manufacturer certification
Manufacturer control over its distributors
Manufacturer imposed tests
Manufacturer self-validation
Manufacturer's designating symbol
Manufacturer's identification
3.4.1.2
A.4.8.1
A.4.1.5
A.4.3.7
3.4.1.5
A.3.6.5
3.6.4
193
MIL-PRF-38535K
INDEX
PARAGRAPH
A.3.6.4
Manufacturer's identification
Manufacturer's internal instructions for internal visual
inspection
A.4.8.1.3.6
3.3.1
Manufacturer's review system
Manufacturer's review system
Manufacturing verification
Marking
G.3.2
B.3.4
5.2
Marking
F.3.1
Marking location and sequence
Marking location and sequence
Marking of container
3.6.7
A.3.6.9
A.5.2.2
Marking of microcircuits
Marking of microcircuits
Marking on container
Marking on container
A.3.6
3.6.9
A.3.6.10
A.3.6.11
Marking option for controlled storage of class level B
Marking option for qualification or quality conformance
inspection (QCI)
A.3.6.12
J.3.1
Mask requirements (when applicable)
Metal package isolation test for class level S devices
Metallization thickness
A.4.1.1.1
A.3.5.5.1
A.3.5.2
Metals
Microcircuit
A.3.1.3.4
A.3.5.6.3
A.3.1.3.13
A.4.5.4.1.1
6.4.4.3
Microcircuit finishes
Microcircuit group
Microcircuit group assignments
Microcircuit module
Microcircuit module
A.3.1.3.5
6.4.1
Microelectronics
Microelectronics
A.3.1.3.1
3.6.2.2.1
A.3.6.2.1
A.3.1.3.31
6.4.4.2
Military designator
Military designator
Military operating temperature range
Monolithic microcircuit
Monolithic microcircuit (or integrated circuit)
Multichip microcircuit
A.3.1.3.4.3
6.4.4.1
Multichip microcircuit
A.3.1.3.4.1
D.4.2.4
A.4.5.8
Multiple criteria
Nonconformance
Nondestructive bond pull test for class level S devices
Nondestructive tests
A.4.6.5
A.4.3.2.3
2.3
Non-Government publications
Non-Government publications
Non-Government publications
J.2.3
A.2.3
194
MIL-PRF-38535K
INDEX
PARAGRAPH
Non-Government publications
Non-Government publications
Non-Government publications
Non-Government publications
NOTES
C.2.3
F.2.3
G.2.3
H.2.3
A.6
NOTES
C.5
On-site validation
3.4.1.3
C.3.5
On-site validation
One hundred percent inspection
Optional internal visual
Order of precedence
Order of precedence
Order of precedence
Order of precedence
Order of precedence
Order of precedence
Order of precedence
Organizational structure
D.4.2.5
F.4.6.1
2.4
A.2.4
C.2.4
F.2.4
G.2.4
H.2.4
J.2.4
G.3.2.1
2.2.2
Other Government documents, drawings, and publications
Other Government documents, drawings, and publications
Other Government documents, drawings, and publications
Other materials
A.2.2.2
G.2.2
A.3.5.3
A.3.5.1
G.3.4.4
A.3.5.1.2
H.3.2.1.1.3
3.4.1.4.1
A.3.5.6.3.3
A.3.5.6
6.4.19
A.3.1.3.30
A.3.5.6.1
H.3.2.2.3.2
A.3.1.3.12
5.1
Package
Package change
Package configurations
Package design and characterization
Package design selection reviews
Package element (other than lead or terminal) finish
Package element material and finish
Package family
Package family
Package material
Package technology styles
Package type
Packaging
PACKAGING
A.5
Packaging
A.5.1
Packaging requirements
A.5.2
Parametric monitor (PM)
H.3.2.1.3.2
3.6.2
Part or identification number (PIN)
Part or identifying number (PIN)
Particle detection
B.3.6
A.3.4.1.2.5
A.4.6.3
Particle impact noise detection (PIND) test for class level S
195
MIL-PRF-38535K
INDEX
PARAGRAPH
Parts per million (PPM)
6.4.14
Passive elements
3.15
Pattern failure rejects
J.3.8.1
J.3.8
Pattern failures
Percent defective allowable (PDA)
Percent defective allowable (PDA)
Percent defective allowable (PDA)
Performance requirements for class T devices
Personnel training and testing
Personnel training and testing
PIN
6.4.8
A.3.1.3.14
F.4.6.5
3.4.8
A.4.8.1.1.2
A.4.8.1.2.1
A.3.6.2
A.3.5.1.1
F.4.7.4.2
A.4.3.5.1
A.4.3.5.2
A.4.3.5
3.4.1.1
C.3.4.1
A.3.1.3.32
A.3.4.1.2
F.3.2
Polymeric die attach materials
Post-test visual examinations
Procedure for sample tests
Procedure for screening tests
Procedure in case of test equipment failure or operator error
Process capability demonstration
Process capability demonstration
Process monitor
Process monitor programs
Process monitors
Process, utility, and material controls
Product acceptable for delivery
Product lot identification
Product traceability
A.4.8.1.2.6
A.4.5.4.1.2
A.4.8.1.2.7
A.4.8.1.2.8
6.4.5
Production lot
Production lot
A.3.1.3.6
A.4.8.1.3.3
3.6.3.1
3.3.2
Proprietary document identification
QD certification marks
QM plan
QM plan
G.3.3
QM plan outline
G.3.3.1
G.3.1
QM program
QML certification and qualification test plan (see G.3.3g)
QML certification requirements
QML line shutdown
G.3.2.2.1
3.4.1
3.4.6
QML listing
3.4.4
QML marked product
3.6.8
QML qualification requirements
Qualification
3.4.2
6.3
Qualification
A.3.4.1
A.4.4.2
H.3.4
Qualification
Qualification eligibility
196
MIL-PRF-38535K
INDEX
PARAGRAPH
3.4.2.1
Qualification extension
Qualification inspection
4.4
Qualification procedures
A.4.4
Qualification test failures
H.3.4.7
C.3.7.1
C.3.7.2
H.3.4.6
A.3.4.1.4
3.4.3
Qualification test plan
Qualification test report
Qualification test report
Qualification to ESD classes
Qualification to RHA levels
Qualification to RHA levels
A.3.4.1.3
6.4.34
6.4.21
A.3.1.3.19
6.4.13
A.4.8.1.1.5
A.4.8
Qualified manufacturer's line
Qualified Manufacturer's Listing (QML)
Qualifying activity
Qualifying activity (QA)
Quality assurance operations
Quality assurance program
Quality assurance program plan
Quality assurance requirements
Quality conformance inspection (QCI)
Quality conformance inspection (QCI)
Quality conformance inspection (QCI)
Quality control operations
A.4.8.1.3
A.3.4
A.3.4.4
A.4.5
F.4.7
A.4.8.1.1.4
3.3
Quality management (QM) program
Radiation hardness assurance (RHA)
Radiation hardness assurance (RHA)
Radiation response characterization
Radiation source of supply (RSS)
Radiation source of supply (RSS) validations
Re-bonding of monolithic devices
Records to be maintained
6.4.17
A.3.1.3.26
C.4.3
6.4.23
3.4.1.3.2
A.3.7.1.1
A.4.8.1.2
3.13
Recycled, recovered, or environmentally preferable materials
Reference to applicable device specification
Reference to device specification or drawing
Remarking
3.1.1
A.3.1.1
3.7
Remarking
A.3.6.13
A.3
REQUIREMENTS
REQUIREMENTS
B.3
REQUIREMENTS
C.3
REQUIREMENTS
D.3
REQUIREMENTS
F.3
REQUIREMENTS
G.3
Requirements for listing on a QML
Resistance to solvents
3.4
F.4.7.2.1
197
MIL-PRF-38535K
INDEX
PARAGRAPH
Responsibility for inspection
Resubmission of failed lots
Revalidation reviews
Rework
A.4.1
A.4.3.3.1
3.4.7
6.4.10
A.3.1.3.16
A.3.7.1
3.6.2.1
A.3.6.2.2
C.3.6
C.3.3
C.3.4
A.4.4.2.1.1
D.4.2.1
A.4.3.2
A.3.5.4.4
A.4.8.1.1.13
1.1
Rework
Rework provisions
RHA designator
RHA designator
RHA packages
RHA QM plan
RHA/QML certification requirements
Sample
Sample size
Sampling
Schematic diagrams
Schematics
Scope
SCOPE
A.1
Scope
A.1.1
SCOPE
B.1
Scope
B.1.1
SCOPE
C.1
Scope
C.1.1
D.1
SCOPE
Scope
D.1.1
F.1
SCOPE
Scope
F.1.1
SCOPE
G.1
SCOPE
H.1
SCOPE
J.1
Scope
J.1.1
Screen testing failures
Screening
4.2.1
4.2
Screening
A.3.4.3
A.4.6
Screening
Screening
B.4.1
Screening
F.4.6
Screening and test
3.8
Screening resubmission criteria
Screening test data for class level S microcircuits
Seal (fine and gross leak) testing
Second and third party validations
Selection of samples
4.2.2
A.4.7.1
J.3.7
3.4.1.3.1
D.4.1.1
198
MIL-PRF-38535K
INDEX
PARAGRAPH
Self audit
A.4.9.2.1
A.4.9.3.7
A.4.9.3.8
A.4.9.3.1
A.4.9.3.6
A.4.9.3.2
A.4.9.1
A.4.9.3.1.4
3.3.3
Self audit areas
Self audit checklist
Self audit program
Self audit report
Self audit representatives
Self audit requirements
Self audit schedule and frequency
Self-assessment program
Self-audit requirements
A.4.9
Serialization
A.3.6.8
B.3.7
Serialization
Single lot sampling method
Solderability
D.4.2
3.10
Solderability
A.4.2
SPC and in process monitoring program
SPC and in process monitoring program
Specifications, standards, and handbooks
Specifications, standards, and handbooks
Specifications, standards, and handbooks
Specifications, standards, and handbooks
Specifications, standards, and handbooks
Specifications, standards, and handbooks
H.3.2.2.1
H.3.2.1.3.1
2.2.1
A.2.2.1
C.2.2.1
F.2.2.1
H.2.2.1
J.2.2.1
D.4
STATISTICAL SAMPLING PROCEDURES AND TABLE
Status report
G.3.2.3
6.4.45
Storage temperature
Subject term (key word) listing
6.7
Substrate (of a microcircuit or integrated circuit)
6.4.3
Substrate (of a microcircuit or integrated circuit)
Symbols
A.3.1.3.3
D.3.2
TABLE A-I. Testing guidelines for changes identified as major
Table A-I.
Table A-II.
TABLE A-II. Lead finish systems
TABLE A-III. Coating thickness and composition
requirements
Table A-III.
TABLE A-IV. Package element (other than leads/terminals)
finish systems
Table A-IV.
Table A-IX
Table A-V.
Table A-VI.
Table A-VII.
Table A-VIII.
Table A-X.
TABLE A-IX. Application specific microcircuits
TABLE A-V. Lead finish
TABLE A-VI. Digital microcircuits
TABLE A-VII. Linear microcircuits
TABLE A-VIII. Other microcircuits
TABLE A-X. Quality assurance program requirements
199
MIL-PRF-38535K
INDEX
PARAGRAPH
TABLE C-I. Group E (RHA testing), class Q
Table C-I.
Table D-I.
TABLE D-I. Sample size series (SSS) sampling plan
TABLE D-II. Hypergeometric sampling plans for small lot
sizes of 200 or less
TABLE H-IA. Assembly process qualification testing for
hermetic packages
TABLE H-IB. Assembly process qualification testing for
plastic packages
TABLE H-IIA. Technology style characterization testing for
hermetic packages
Table D-II.
Table H-IA.
Table H-IB.
Table H-IIA.
Table H-IIB.
TABLE H-IIB. Technology style characterization testing for
plastic packages
TABLE IA. Microcircuit screening procedure for hermetic
QML microcircuits
Table IA.
Table IB.
Table II.
Table III.
Table IV.
Table J-I.
Table V.
F.4.2
TABLE IB. Tests/monitors for plastic packages
TABLE II. Group B tests
TABLE III. Group A electrical tests
TABLE IV. Group C tests
TABLE J-I. End-of-line TCI testing procedure (option 1)
TABLE V. Group D tests
Tape
TCI
J.3.9
TCI AND SCREENING INFORMATION
TCI assessment
J.3
3.9.1
TCI reporting
J.3.9.2
H.3.2.2.2.1
H.3.2.2.2
3.9
TCV certification
TCV program
Technology conformance inspection (TCI)
Technology conformance inspection (TCI)
Technology conformance inspection (TCI)
Technology flow
4.3
B.4.2
6.4.20
Technology validation
3.4.1.4
C.3.5.1
F.4.6.3
6.4
Technology validation
Temperature cycle
Terms and definitions
Terms, definitions, and symbols
Test facility change
A.3.1.3
G.3.4.5
A.4.3.4
6.4.35
Test method deviation
Test optimization
Test optimization
J.3.12
Test results
A.4.7
Third party design center
Tightened inspection
6.4.22
D.4.2.6
A.3.5.6.3.5
A.4.8.1.1.9
Tin lead plate
Tool, gauge, and test equipment maintenance and calibration
200
MIL-PRF-38535K
INDEX
PARAGRAPH
Traceability
3.11
Traceability
A.3.4.6
B.3.8
Traceability
Traceability
C.4.1
Training and retraining of auditors
Training of operators and inspectors
Transitional certification and qualification
TRB duties
A.4.9.3.1.3
A.4.8.1.2.1.1
H.3.3
C.3.2
TRB duties
G.3.2.2
C.3.2.1
B.3.3
TRB/RSS
Validation (certification)
Verification
4.1
VERIFICATION
A.4
VERIFICATION
B.4
VERIFICATION
C.4
VERIFICATION
F.4
Verification of glassivation layer integrity
Visual examination of bump
Visual examination of encapsulant
Visual inspection of bond
Wafer acceptance plan
Wafer acceptance plan
Wafer fabrication
A.3.5.5.4
F.4.3.1
F.4.5.1
F.4.4.2
C.3.4.1.3
H.3.2.1.4
C.3.4.1.2
H.3.2.2.2
J.3.1.1
6.4.7
Wafer fabrication
Wafer fabrication process
Wafer lot
Wafer lot
A.3.1.3.11
A.3.4.5
A.3.4.1.2.2
A.3.7
Wafer lot acceptance
Wire bonding
Workmanship
201
MIL-PRF-38535K
INDEX
DESCRIPTION
PAGE
(This page intentionally left blank.)
202
MIL-PRF-38535K
Custodians:
Army - CR
Navy - EC
Preparing activity:
DLA - CC
Air Force - 85
NASA – NA
DLA - CC
Review activities:
(Project number: 5962-2013-001)
Army - MI, SM
Navy - AS, CG, MC, OS, SH, TD
Air Force - 19, 99
Civil agency:
DOT-FAA (RD-650)
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.
203
相关型号：
©2020 ICPDF网 联系我们和版权申明