AD8014AR-REEL7 [ADI]
400 MHz Low Power High Performance Amplifier; 400 MHz的低功耗高性能放大器
| 型号： | AD8014AR-REEL7 |
| 厂家： | 
ADI |
| 描述： | 400 MHz Low Power High Performance Amplifier |
| 文件： | 总11页 (文件大小：1144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
400 MHz Low Power
a
High Performance Amplifier
AD8014
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
Low Cost
SOIC-8 (R)
SOT-23-5 (RT)
Low Power: 1.15 mA Max for 5 V Supply
High Speed
400 MHz, –3 dB Bandwidth (G = +1)
4000 V/s Slew Rate
AD8014
NC
–IN
+IN
NC
1
2
3
4
8
7
6
5
+V
V
5
4
1
2
3
S
OUT
+V
V
S
60 ns Overload Recovery
–V
S
OUT
Fast Settling Time of 24 ns
Drive Video Signals on 50 ⍀ Lines
Very Low Noise
+IN
–IN
NC
–V
S
AD8014
3.5 nV/√Hz and 5 pA/√Hz
NC = NO CONNECT
5 nV/√Hz Total Input Referred Noise @ G = +3 w/500 ⍀
Feedback Resistor
Operates on +4.5 V to +12 V Supplies
Low Distortion –70 dB THD @ 5 MHz
Low, Temperature-Stable DC Offset
Available in SOIC-8 and SOT-23-5
APPLICATIONS
Photo-Diode Preamp
Professional and Portable Cameras
Hand Sets
DVD/CD
Handheld Instruments
A-to-D Driver
The AD8014 is a very high speed amplifier with 400 MHz,
–3 dB bandwidth, 4000 V/µs slew rate, and 24 ns settling time.
The AD8014 is a very stable and easy to use amplifier with fast
overload recovery. The AD8014 has extremely low voltage and
current noise, as well as low distortion, making it ideal for use
in wide-band signal processing applications.
Any Power-Sensitive High Speed System
For a current feedback amplifier, the AD8014 has extremely
low offset voltage and input bias specifications as well as low
drift. The input bias current into either input is less than 15 µA
at +25°C with a typical drift of less than 50 nA/°C over the
industrial temperature range. The offset voltage is 5 mV max
with a typical drift less than 10 µV/°C.
PRODUCT DESCRIPTION
The AD8014 is a revolutionary current feedback operational
amplifier that attains new levels of combined bandwidth, power,
output drive and distortion. Analog Devices, Inc. uses a propri-
etary circuit architecture to enable the highest performance
amplifier at the lowest power. Not only is it technically superior,
but is low priced, for use in consumer electronics. This general
purpose amplifier is ideal for a wide variety of applications
including battery operated equipment.
For a low power amplifier, the AD8014 has very good drive
capability with the ability to drive 2 V p-p video signals on
75 Ω or 50 Ω series terminated lines and still maintain more
than 135 MHz, 3 dB bandwidth.
Rev. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
© Analog Devices, Inc.,
Fax:781/461-3113
2010
(@ TA = +25؇C, VS = ؎5 V, RL = 150 ⍀, RF = 1 k⍀, Gain = +2, unless otherwise noted)
AD8014–SPECIFICATIONS
AD8014AR/RT
Parameter
Conditions
Min
Typ
Max
Units
DYNAMIC PERFORMANCE
–3 dB Bandwidth Small Signal
G = +1, VO = 0.2 V p-p, RL = 1 kΩ
G = –1, VO = 0.2 V p-p, RL = 1 kΩ
VO = 2 V p-p
VO = 2 V p-p, RF = 500 Ω
VO = 2 V p-p, RF = 500 Ω, RL = 50 Ω
VO = 0.2 V p-p, RL = 1 kΩ
VO = 2 V p-p, RL = 1 kΩ
RL = 1 kΩ, RF = 500 Ω
RL = 1 kΩ
G = –1, RL = 1 kΩ, RF = 500 Ω
G = –1, RL = 1 kΩ
G = +1, VO = 2 V Step, RL = 1 kΩ
2 V Step
400
120
140
170
480
160
180
210
130
12
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/µs
V/µs
V/µs
V/µs
ns
–3 dB Bandwidth Large Signal
0.1 dB Small Signal Bandwidth
0.1 dB Large Signal Bandwidth
Slew Rate, 25% to 75%, VO = 4 V Step
20
4600
2800
4000
2500
24
Settling Time to 0.1%
Rise and Fall Time 10% to 90%
1.6
ns
G = –1, 2 V Step
0 V to ±4 V Step at Input
2.8
60
ns
ns
Overload Recovery to Within 100 mV
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion
fC = 5 MHz, VO = 2 V p-p, RL = 1 kΩ
fC = 5 MHz, VO = 2 V p-p
fC = 20 MHz, VO = 2 V p-p
fC = 20 MHz, VO = 2 V p-p
f = 10 kHz
–68
–51
–45
–48
3.5
dB
dB
dB
dB
nV/√Hz
pA/√Hz
%
SFDR
Input Voltage Noise
Input Current Noise
Differential Gain Error
f = 10 kHz
5
NTSC, G = +2, RF = 500 Ω
NTSC, G = +2, RF = 500 Ω, RL = 50 Ω
NTSC, G = +2, RF = 500 Ω
NTSC, G = +2, RF = 500 Ω, RL = 50 Ω
f = 10 MHz
0.05
0.46
0.30
0.60
22
%
Differential Phase Error
Third Order Intercept
Degree
Degree
dBm
DC PERFORMANCE
Input Offset Voltage
2
2
5
6
mV
mV
TMIN–TMAX
Input Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
10
5
50
5
µV/°C
+Input or –Input
15
µA
nA/°C
±µA
kΩ
Open Loop Transresistance
800
1300
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
+Input
+Input
450
2.3
±4.1
–57
kΩ
pF
V
±3.8
–52
VCM = ±2.5 V
dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
RL = 150 Ω
RL = 1 kΩ
VO = ±2.0 V
±3.4
±3.6
40
±3.8
±4.0
50
70
40
V
V
mA
mA
pF
Output Current
Short Circuit Current
Capacitive Load Drive for 30% Overshoot
2 V p-p, RL = 1 kΩ, RF = 500 Ω
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio
±2.25 ±5
1.15
–58
±6.0
1.3
V
mA
dB
±4 V to ±6 V
–55
Specifications subject to change without notice.
–2–
Rev. C
AD8014
(@ T = +25؇C, V = +5 V, R = 150 ⍀, R = 1 k⍀, Gain = +2, unless otherwise noted)
SPECIFICATIONS
A
S
L
F
AD8014AR/RT
Typ
Parameter
Conditions
Min
Max
Units
DYNAMIC PERFORMANCE
–3 dB Bandwidth Small Signal
G = +1, VO = 0.2 V p-p, RL = 1 kΩ
G = –1, VO = 0.2 V p-p, RL = 1 kΩ
VO = 2 V p-p
VO = 2 V p-p, RF = 500 Ω
VO = 2 V p-p, RF = 500 Ω, RL = 75 Ω
VO = 0.2 V p-p, RL = 1 kΩ
VO = 2 V p-p
RL = 1 kΩ, RF = 500 Ω
RL = 1 kΩ
G = –1, RL = 1 kΩ, RF = 500 Ω
G = –1, RL = 1 kΩ
345
100
75
430
135
100
115
100
10
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/µs
V/µs
V/µs
V/µs
ns
–3 dB Bandwidth Large Signal
90
0.1 dB Small Signal Bandwidth
0.1 dB Large Signal Bandwidth
Slew Rate, 25% to 75%, VO = 2 V Step
20
3900
1100
1800
1100
24
Settling Time to 0.1%
Rise and Fall Time 10% to 90%
G = +1, VO = 2 V Step, RF = 1 kΩ
2 V Step
1.9
ns
G = –1, 2 V Step
0 V to ±2 V Step at Input
2.8
60
ns
ns
Overload Recovery to Within 100 mV
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion
fC = 5 MHz, VO = 2 V p-p, RL = 1 kΩ
fC = 5 MHz, VO = 2 V p-p
fC = 20 MHz, VO = 2 V p-p
fC = 20 MHz, VO = 2 V p-p
f = 10 kHz
–70
–51
–45
–47
3.5
dB
dB
dB
dB
nV/√Hz
pA/√Hz
%
SFDR
Input Voltage Noise
Input Current Noise
Differential Gain Error
f = 10 kHz
5
NTSC, G = +2, RF = 500 Ω
NTSC, G = +2, RF = 500 Ω, RL = 50 Ω
NTSC, G = +2, RF = 500 Ω
NTSC, G = +2, RF = 500 Ω, RL = 50 Ω
f = 10 MHz
0.06
0.05
0.03
0.30
22
%
Differential Phase Error
Third Order Intercept
Degree
Degree
dBm
DC PERFORMANCE
Input Offset Voltage
2
2
5
6
mV
mV
TMIN–TMAX
Input Offset Voltage Drift
Input Bias Current
Input Bias Current Drift
Input Offset Current
10
5
50
5
µV/°C
+Input or –Input
15
µA
nA/°C
±µA
kΩ
Open Loop Transresistance
750
1300
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
+Input
+Input
450
2.3
1.1 to 3.9
kΩ
pF
V
Input Common-Mode Voltage Range
1.2
3.8
Common-Mode Rejection Ratio
VCM = 1.5 V to 3.5 V
–52
–57
dB
OUTPUT CHARACTERISTICS
Output Voltage Swing
RL = 150 Ω to 2.5 V
RL = 1 kΩ to 2.5 V
VO = 1.5 V to 3.5 V
1.4
1.2
30
1.1 to 3.9
0.9 to 4.1
50
70
55
3.6
3.8
V
V
mA
mA
pF
Output Current
Short Circuit Current
Capacitive Load Drive for 30% Overshoot
2 V p-p, RL = 1 kΩ, RF = 500 Ω
POWER SUPPLY
Operating Range
Quiescent Current
4.5
5
1.0
12
1.15
V
mA
Power Supply Rejection Ratio
4 V to 5.5 V
–55
–58
dB
Specifications subject to change without notice.
–3–
Rev. C
AD8014
ABSOLUTE MAXIMUM RATINGS1
plastic. This is approximately +150°C. Even temporarily ex-
ceeding this limit may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the pack-
age. Exceeding a junction temperature of +175°C may result in
device failure.
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W
SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . .±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . .+300°C
ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V
The output stage of the AD8014 is designed for large load cur-
rent capability. As a result, shorting the output to ground or to
power supply sources may result in a very large power dissipa-
tion. To ensure proper operation it is necessary to observe the
maximum power derating tables.
Table I. Maximum Power Dissipation vs. Temperature
Ambient Temp
؇C
Power Watts
SOT-23-5
Power Watts
SOIC
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only, functional operation of the
device at these or any other conditions above listed in the operational section of this
specification is not implied. Exposure to Absolute Maximum Ratings for any
extended periods may affect device reliability.
–40
–20
0
+20
+40
+60
+80
+100
0.79
0.71
0.63
0.54
0.46
0.38
0.29
0.21
1.19
1.06
0.94
0.81
0.69
0.56
0.44
0.31
2 Specification is for device in free air at 25°C.
8-Lead SOIC Package θJA = 155°C/W.
5-Lead SOT-23 Package θJA = 240°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8014
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8014 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
Rev. C
Typical Performance Characteristics–AD8014
15
12
9
2.0
G = +1
V
= 200mV p-p
1.0
O
V
= 0.2V
R
R
= 1k⍀
O
F
V
= ؎5V
S
0
–1.0
–2.0
–3.0
–4.0
–5.0
–6.0
–7.0
= 1k⍀
L
V
= 0.5V
O
6
3
V
= +5V
S
0
V
= 1V
O
–3
–6
–9
–12
V
= 2V
= 4V
O
V
V
= ؎5V
O
S
G = –1
R
= 1k⍀
F
L
R
= 1k⍀
–15
1
10
100
1000
1
10
100
1000
FREQUENCY – MHz
FREQUENCY – MHz
Figure 1. Frequency Response, G = +1, VS = ±5 V and +5 V
Figure 4. Bandwidth vs. Output Level—Gain of –1, Dual
Supply
12
9
12
9
V
= 0.5V p-p
V
= 1V p-p
O
O
6
6
3
0
3
V
= ؎5V
S
0
–3
–6
G = +2
R
= 75⍀
L
R
V
= 500⍀
= 2V p-p
F
O
V
= 2V p-p
O
R
= 50⍀
–3
–6
L
V
= +5V
S
–9
–12
–15
G = +2
R
= 1k⍀
F
L
–9
V
= 3V p-p
O
R
= 1k⍀
–12
1
10
100
1000
1
10
100
1000
FREQUENCY – MHz
FREQUENCY – MHz
Figure 2. Frequency Response, G = +2, VO = 2 V p-p
Figure 5. Bandwidth vs. Output Level—Single Supply,
G = +2
12
9
2
1
V
= 0.5V p-p
O
V
= 0.5V p-p
O
0
–1
–2
–3
–4
–5
6
3
V
= 1V p-p
O
V
= 4V p-p
O
0
–3
–6
V
O
= 2V p-p
V
= 4V p-p
O
V
= 2V p-p
O
V
= +5V
S
V
= ؎5V
S
G = –1
R
G = +2
R
–6
–7
–8
= 1k⍀
F
L
= 1k⍀
F
L
–9
R
= 1k⍀
R
= 1k⍀
V
= 0.2V p-p
O
–12
10
100
FREQUENCY – MHz
1
10
100
1000
1000
FREQUENCY – MHz
Figure 6. Bandwidth vs. Output Level—Single Supply,
Gain of –1
Figure 3. Bandwidth vs. Output Voltage Level—
Dual Supply, G = +2
–5–
Rev. C
AD8014
7.5
6.2
6.1
R
= 300⍀
7.0
6.5
6.0
5.5
F
V
= ؎5V
S
6.0
5.9
5.8
R
= 500⍀
F
R
= 600⍀
F
V = +5V
S
5.7
5.6
5.5
5.4
5.3
5.2
R
= 750⍀
F
5.0
4.5
R
= 1k⍀
V
= ؎5V
S
F
G = +2
V = 2V p-p
4.0
3.5
3.0
G = +2
= 2V p-p
V
R
= 500⍀
O
F
L
R
= 150⍀
R
= 150⍀
L
1
10
100
1000
1
10
100
1000
FREQUENCY – MHz
FREQUENCY – MHz
Figure 7. Bandwidth vs. Feedback Resistor—Dual Supply
Figure 10. Gain Flatness—Large Signal
7.5
7.0
6.5
9
6
3
G = +1
R
= 300⍀
0
F
G = +2
6.0
–3
R
= 500⍀
F
–6
5.5
5.0
G = +10
R
= 750⍀
F
–9
V
= ±5V
V
= +5V
S
S
R
= 1k⍀
F
R
R
V
= 1k⍀
–12
G = +2
= 2V p-p
F
V
= 1k⍀
4.5
4.0
O
L
–15
–18
R
= 150⍀
= 200mV p-p
L
O
1
10
100
1000
1
10
100
1000
FREQUENCY – MHz
FREQUENCY – MHz
Figure 8. Bandwidth vs. Feedback Resistor—Single Supply
Figure 11. Bandwidth vs. Gain—Dual Supply, RF = 1 kΩ
6.8
9
G = +2
6.7
G = +1
R
R
V
= 1k⍀
6
3
F
6.6
6.5
6.4
6.3
6.2
6.1
6.0
5.9
5.8
5.7
5.6
= 1k⍀
L
V
= ؎5V
= 200mV p-p
S
O
0
V
= +5V
S
G = +2
–3
R
R
V
= 1k⍀
F
= 1k⍀
L
–6
V
= +5V
= 200mV p-p
O
S
G = +10
–9
–12
–15
–18
1
10
100
1000
1
10
100
1000
FREQUENCY – MHz
FREQUENCY – MHz
Figure 9. Gain Flatness—Small Signal
Figure 12. Bandwidth vs. Gain—Single Supply
–6–
Rev. C
AD8014
0
–10
–20
–30
–40
–50
–60
–70
140
120
100
80
0
–40
V
= ؎5V
S
G = +2
R
PHASE
–80
= 1k⍀
F
–PSRR
–120
–160
–200
–240
+PSRR
GAIN
60
40
–80
–90
20
0
1k
–280
1G
10k
100k
1M
10M
100M
–100
0.01
0.10
1
10
100
1000
FREQUENCY – Hz
FREQUENCY – MHz
Figure 16. Transimpedance Gain and Phase vs.
Frequency
Figure 13. PSRR vs. Frequency
100
10
–20
–25
–30
–35
–40
–45
–50
–55
–60
V
= +5V
S
1
V
= ±5V
S
0.1
0.01
–65
–70
–75
0.01
0.1
1
10
100
1000
FREQUENCY – MHz
0.1
1
10
FREQUENCY – MHz
100
1000
Figure 17. Output Resistance vs. Frequency, VS = ±5 V
and +5 V
Figure 14. CMRR vs. Frequency
–30
3RD
R
= 150⍀
L
–50
–70
2ND
= 150⍀
R
2ND
= 1k⍀
L
R
L
3RD
= 1k⍀
R
L
DISTORTION BELOW
NOISE FLOOR
–90
1
10
FREQUENCY – MHz
100
Figure 18. Settling Time
Figure 15. Distortion vs. Frequency; VS = ±5 V, G = +2
–7–
Rev. C
AD8014
Figure 21 shows the circuit that was used to imitate a photo-
diode preamp. A photodiode for this application is basically a
high impedance current source that is shunted by a small ca-
pacitance. In this case, a high voltage pulse from a Picosecond
Pulse Labs Generator that is ac-coupled through a 20 kΩ resis-
tor is used to simulate the high impedance current source of a
photodiode. This circuit will convert the input voltage pulse into
a small charge package that is converted back to a voltage by the
AD8014 and the feedback resistor.
In this case the feedback resistor chosen was 1.74 kΩ, which is a
compromise between maintaining bandwidth and providing
sufficient gain in the preamp stage. The circuit preserves the
pulse shape very well with very fast rise time and a minimum of
overshoot as shown in Figure 22.
Figure 19. Large Signal Step Response; VS = ±5 V,
O = 4 V Step
V
1.74k⍀
+5V
0.1F
20k⍀
INPUT
49.9⍀ OUTPUT
49.9⍀
AD8014
(10
؋
PROBE) (NO LOAD)
–5V
Figure 21. AD8014 as a Photodiode Preamp
TEK RUN: 2.0GS/s ET AVERAGE
T[
]
1
INPUT
20V/
DIV
Figure 20. Large Signal Step Response; VS = +5 V,
O = 2 V Step
V
Note: On Figures 19 and 20 RF = 500 Ω, RS = 50 Ω and CL =
20 pF.
2
OUTPUT
500mV/DIV
CH1 20.0V CH2 500mV M 25.0ns CH4 380mV
APPLICATIONS
CD ROM and DVD Photodiode Preamp
Figure 22. Pulse Response
High speed Multi-X CD ROM and DVD drives require high
frequency photodiode preamps for their read channels. To mini-
mize the effects of the photodiode capacitance, the low imped-
ance of the inverting input of a current feedback amplifier is
advantageous. Good group delay characteristics will preserve the
pulse response of these pulses. The AD8014, having many ad-
vantages, can make an excellent low cost, low noise, low power,
and high bandwidth photodiode preamp for these applications.
–8–
Rev. C
AD8014
Video Drivers
DRIVING CAPACITIVE LOADS
The AD8014 easily drives series terminated cables with video
signals. Because the AD8014 has such good output drive you
can parallel two or three cables driven from the same AD8014.
Figure 23 shows the differential gain and phase driving one
video cable. Figure 24 shows the differential gain and phase
driving two video cables. Figure 25 shows the differential gain
and phase driving three video cables.
The AD8014 was designed primarily to drive nonreactive loads.
If driving loads with a capacitive component is desired, best
settling response is obtained by the addition of a small series
resistance as shown in Figure 26. The accompanying graph
shows the optimum value for RSERIES vs. Capacitive Load. It is
worth noting that the frequency response of the circuit when
driving large capacitive loads will be dominated by the passive
roll-off of RSERIES and CL.
0.00 0.02 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.04 0.03
0.10
40
30
20
10
0.05
0.00
–0.05
–0.10
0.00 0.01 0.10 0.21 0.26 0.28 0.29 0.30 0.30 0.30 0.30
0.60
0.40
0.20
0.00
–0.20
–0.40
–0.60
1ST
2ND 3RD 4TH 5TH
6TH 7TH
8TH 9TH 10TH 11TH
Figure 23. Differential Gain and Phase RF = 500, ±5 V, RL =
150 Ω, Driving One Cable, G = +2
0
5
10
15
20
25
C
– pF
L
Figure 26. Driving Capacitive Load
Choosing Feedback Resistors
Changing the feedback resistor can change the performance of
the AD8014 like any current feedback op amp. The table below
illustrates common values of the feedback resistor and the per-
formance which results.
0.00 –0.02 0.03
0.05 0.06 0.06 0.05 0.05 0.07 0.10 0.14
0.30
0.20
0.10
0.00
–0.10
–0.20
–0.30
0.00 0.07 0.24
0.40 0.43 0.44 0.43 0.40 0.35 0.26 0.16
0.60
0.40
Table II.
0.20
0.00
–3 dB BW
VO = ؎0.2 V
RL = 1 k⍀
–3 dB BW
VO = ؎0.2 V
RL = 150 ⍀
–0.20
–0.40
–0.60
Gain
RF
RG
1ST 2ND 3RD
4TH 5TH
6TH 7TH 8TH 9TH 10TH 11TH
+1
+2
+10
–1
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
1 kΩ
2 kΩ
750 Ω
499 Ω
Open
1 kΩ
111 Ω
1 kΩ
499 Ω
100 Ω
2 kΩ
480
280
50
160
140
45
200*
260*
280*
430
260
45
150
130
40
180*
210*
230*
Figure 24. Differential Gain and Phase RF = 500, ±5 V, RL =
75 Ω, Driving Two Cables, G = +2
0.00 0.44 0.52 0.54 0.52 0.52 0.50 0.48 0.47 0.44
0.45
–2
0.80
0.60
0.40
0.20
0.00
–0.20
–10
+2
+2
+2
750 Ω
499 Ω
–0.40
–0.60
–0.80
*VO = ±1 V.
0.00 0.10 0.32 0.53 0.57 0.59 0.58 0.56 0.54 0.51
0.48
0.80
0.60
0.40
0.20
0.00
–0.20
–0.40
–0.60
–0.80
1ST 2ND 3RD 4TH 5TH
6TH 7TH 8TH 9TH 10TH 11TH
Figure 25. Differential Gain and Phase RF = 500, ±5 V, RL =
50 Ω, Driving Three Cables, G = +2
–9–
Rev. C
AD8014
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
8
1
5
4
6.20 (0.2441)
5.80 (0.2284)
4.00 (0.1574)
3.80 (0.1497)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
BSC
45°
1.75 (0.0688)
1.35 (0.0532)
0.25 (0.0098)
0.10 (0.0040)
8°
0°
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
1.27 (0.0500)
0.40 (0.0157)
0.25 (0.0098)
0.17 (0.0067)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 27. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
3.00
2.90
2.80
5
1
4
3
3.00
2.80
2.60
1.70
1.60
1.50
2
0.95 BSC
1.90
BSC
1.30
1.15
0.90
0.20 MAX
0.08 MIN
1.45 MAX
0.95 MIN
0.55
0.45
0.35
0.15 MAX
0.05 MIN
10°
5°
0°
SEATING
PLANE
0.20
BSC
0.50 MAX
0.35 MIN
COMPLIANT TO JEDEC STANDARDS MO-178-AA
Figure 28. 5-Lead Small Outline Transistor Package [SOT-23]
(RJ-5)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
AD8014AR
AD8014AR -REEL7
AD8014ARZ
AD8014ARZ-REEL
AD8014ARZ-REEL7
AD8014ART-R2
AD8014ART-REEL7
AD8014ARTZ-R2
AD8014ARTZ-REEL
AD8014ARTZ-REEL7
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
Package Option
R-8
R-8
R-8
R-8
R-8
RJ-5
RJ-5
RJ-5
RJ-5
RJ-5
Branding
HAA
HAA
H09
H09
H09
1 Z = RoHS Compliant Part.
-10-
Rev. C
AD8014
REVISION HISTORY
Changes to Figure 22 ........................................................................8
Updated Outline Dimensions........................................................10
Changes to Ordering Guide...........................................................10
©1998–2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D08930-0-4/10(C)
Rev. C
-11-
相关型号：
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