AD8017 [ADI]

Dual High Output Current, High Speed Amplifier; 双路高输出电流,高速放大器
AD8017
型号: AD8017
厂家: ADI    ADI
描述:

Dual High Output Current, High Speed Amplifier
双路高输出电流,高速放大器

放大器
文件: 总16页 (文件大小:223K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Dual High Output Current,  
High Speed Amplifier  
a
AD8017  
PIN CONFIGURATION  
FEATURES  
8-Lead Thermal Coastline SOIC (SO-8)  
High Output Drive Capability  
20 V p-p Differential Output Voltage, RL = 50  
10 V p-p Single-Ended Output Voltage While  
Delivering 200 mA to a 25 Load  
Low Power Operation  
AD8017  
1
2
3
4
8
7
6
5
+V  
OUT1  
–IN1  
+IN1  
S
OUT2  
–IN2  
+IN2  
+
+
+5 V to +12 V Voltage Supply @ 7 mA/Amplifier  
Low Distortion  
–V  
S
–78 dBc @ 500 kHz SFDR, RL = 100 , VO = 2 V p-p  
–58 dBc Highest Harmonic @ 1 MHz, IO = 270 mA  
(RL = 10 )  
High Speed  
160 MHz, –3 dB Bandwidth (G = +2)  
1600 V/s Slew Rate  
12  
10  
8
V
S
= ؎6V  
APPLICATIONS  
xDSL PCI Cards  
Consumer DSL Modems  
Line Driver  
6
Video Distribution  
4
V
= ؎2.5V  
S
2
PRODUCT DESCRIPTION  
The AD8017 is a low cost, dual high speed amplifier capable of  
driving low distortion signals to within 1.0 V of the supply rail.  
It is intended for use in single supply xDSL systems where low  
distortion and low cost are essential. The amplifiers will be able  
to drive a minimum of 200 mA of output current per amplifier.  
The AD8017 will deliver –78 dBc of SFDR at 500 kHz, required  
for many xDSL applications.  
0
10  
100  
1000  
1
LOAD RESISTANCE ⍀  
Figure 1. Output Swing vs. Load Resistance  
The AD8017 drive capability comes in a very compact form.  
Utilizing ADI’s proprietary Thermal Coastline SOIC package,  
the AD8017’s total (static and dynamic) power on +12 V sup-  
plies is easily dissipated without external heatsink, other than to  
place the AD8017 on a 4-layer PCB.  
Fabricated in ADI’s high speed XFCB process, the high band-  
width and fast slew rate of the AD8017 keep distortion to a  
minimum, while dissipating a minimum amount of power. The  
quiescent current of the AD8017 is 7 mA/amplifier.  
The AD8017 will operate over the commercial temperature  
range –40°C to +85°C.  
Low distortion, high output voltage drive, and high output  
current drive make the AD8017 ideal for use in low cost Cus-  
tomer Premise End (CPE) equipment for ADSL, SDSL, VDSL  
and proprietary xDSL systems.  
+V  
S
+
R1  
+
R
OR  
135  
= 100⍀  
LINE  
POWER  
IN dB  
L
V
V
V
OUT  
IN  
REF  
R2  
N :N  
S
P
TRANSFORMER  
V  
S
Figure 2. Differential Drive Circuit for xDSL Applications  
REV. A  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781/329-4700  
Fax: 781/326-8703  
World Wide Web Site: http://www.analog.com  
© Analog Devices, Inc., 2000  
(@ +25؇C, V = ؎6 V, R = 100 , R = R = 619 , unless otherwise noted)  
AD8017–SPECIFICATIONS  
S
L
F
G
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
DYNAMIC PERFORMANCE  
–3 dB Bandwidth  
0.1 dB Bandwidth  
Large Signal Bandwidth  
Slew Rate  
Rise and Fall Time  
Settling Time  
G = +2, VOUT < 0.4 V p-p  
100  
160  
70  
105  
1600  
2.6  
35  
MHz  
MHz  
MHz  
V/µs  
ns  
VOUT < 0.4 V p-p  
VOUT = 4 V p-p  
Noninverting, VOUT = 2 V p-p, G = +2  
Noninverting, VOUT = 2 V p-p  
0.1%, VOUT = 4 V Step  
ns  
Overload Recovery  
VIN = 5 V p-p  
74  
ns  
NOISE/HARMONIC PERFORMANCE  
Distortion  
VOUT = 2 V p-p  
2nd Harmonic  
500 kHz, RL = 100 /25 Ω  
1 MHz, RL = 100 /25 Ω  
500 kHz, RL = 100 /25 Ω  
1 MHz, RL = 100 /25 Ω  
500 kHz, RL = 100 /25 Ω  
500 kHz, RL = 100 /25 Ω  
26 kHz to 1.1 MHz  
–78/–71  
–76/–69  
–105/–91  
–81/–72  
40/35  
–76/–66  
–66  
dBc  
dBc  
dBc  
dBc  
dBm  
dBc  
dBc  
3rd Harmonic  
IP3  
IMD  
MTPR  
Input Noise Voltage  
Input Noise Current  
f = 10 kHz  
1.9  
23  
21  
–66  
nV/Hz  
pAHz  
pAHz  
dB  
f = 10 kHz (+ Inputs)  
f = 10 kHz (– Inputs)  
f = 5 MHz, G = +2  
Crosstalk  
DC PERFORMANCE  
Input Offset Voltage  
1.8  
3.0  
4.0  
mV  
mV  
kΩ  
TMIN–TMAX  
Open Loop Transimpedance  
VOUT = 2 V p-p  
185  
143  
700  
TMIN–TMAX  
kΩ  
INPUT CHARACTERISTICS  
Input Resistance  
Input Capacitance  
+Input  
+Input  
50  
2.4  
16  
kΩ  
pF  
µA  
µA  
µA  
µA  
dB  
V
Input Bias Current (+)  
45  
67  
25  
32  
TMIN–TMAX  
Input Bias Current (–)  
1.0  
T
MIN–TMAX  
CMRR  
Input CM Voltage Range  
VCM 2.5 V  
=
59  
63  
5.1  
OUTPUT CHARACTERISTICS  
Output Resistance  
0.2  
5.0  
270  
Output Voltage Swing  
RL = 25 Ω  
4.6  
200  
V
Output Current1  
Highest Harmonic < –58 dBc,  
f = 1 MHz, RL = 10 Ω  
mA  
TMIN–TMAX, Highest Harmonic < –52 dBc 100  
mA  
mA  
Short-Circuit Current  
1500  
7.0  
POWER SUPPLY  
Supply Current/Amp  
7.7  
7.8  
6.0  
mA  
mA  
V
dB  
°C  
TMIN–TMAX  
Dual Supply  
Operating Range  
Power Supply Rejection Ratio  
Operating Temperature Range  
2.2  
58  
–40  
61  
+85  
NOTES  
1Output current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load ( RL = 10 ), while maintaining an  
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).  
Specifications subject to change without notice.  
–2–  
REV. A  
AD8017  
(@ +25؇C, V = ؎2.5 V, R = 100 , R = R = 619 , unless otherwise noted)  
SPECIFICATIONS  
S
L
F
G
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
DYNAMIC PERFORMANCE  
–3 dB Bandwidth  
0.1 dB Bandwidth  
Large Signal Bandwidth  
Slew Rate  
Rise and Fall Time  
Settling Time  
G = +2, VOUT < 0.4 V p-p  
VOUT < 0.4 V p-p  
75  
120  
40  
100  
800  
2.0  
35  
MHz  
MHz  
MHz  
V/µs  
ns  
V
OUT = 4 V p-p  
Noninverting, VOUT = 2 V p-p, G = +2  
Noninverting, VOUT = 2 V p-p  
0.1%, VOUT = 2 V Step  
ns  
Overload Recovery  
VIN = 2.5 V p-p  
74  
ns  
NOISE/HARMONIC PERFORMANCE  
Distortion  
V
OUT = 2 V p-p  
2nd Harmonic  
500 kHz, RL = 100 /25 Ω  
1 MHz, RL = 100 /25 Ω  
500 kHz, RL = 100 /25 Ω  
1 MHz, RL = 100 /25 Ω  
500 kHz, RL = 100 /25 Ω  
500 kHz, RL = 100 /25 Ω  
26 kHz to 1.1 MHz  
–75/–68  
–73/–66  
–91/–88  
–79/–74  
40/36  
–78/–64  
–66  
dBc  
dBc  
dBc  
dBc  
dBm  
dBc  
dBc  
3rd Harmonic  
IP3  
IMD  
MTPR  
Input Noise Voltage  
Input Noise Current  
f = 10 kHz  
1.8  
23  
21  
–66  
nV/Hz  
pAHz  
pAHz  
dB  
f = 10 kHz (+ Inputs)  
f = 10 kHz (– Inputs)  
f = 5 MHz, G = +2  
Crosstalk  
DC PERFORMANCE  
Input Offset Voltage  
0.8  
2.0  
2.6  
mV  
mV  
kΩ  
T
MIN–TMAX  
Open Loop Transimpedance  
VOUT = 2 V p-p  
TMIN–TMAX  
40  
45  
166  
kΩ  
INPUT CHARACTERISTICS  
Input Resistance  
Input Capacitance  
+Input  
+Input  
50  
2.4  
16  
kΩ  
pF  
µA  
µA  
µA  
µA  
dB  
V
Input Bias Current (+)  
40  
62  
25  
32  
TMIN–TMAX  
TMIN–TMAX  
Input Bias Current (–)  
2
CMRR  
Input CM Voltage Range  
VCM  
=
1.0 ( 1.0)  
57  
60  
1.6  
OUTPUT CHARACTERISTICS  
Output Resistance  
0.2  
1.65  
120  
Output Voltage Swing  
RL = 25 Ω  
1.55  
100  
V
Output Current1  
Highest Harmonic < –55 dBc,  
f = 1 MHz, RL = 10 Ω  
mA  
TMIN–TMAX Highest Harmonic < 50 dBc 60  
mA  
mA  
Short-Circuit Current  
1300  
6.2  
POWER SUPPLY  
Supply Current/Amp  
7
7.3  
6.0  
mA  
mA  
V
TMIN–TMAX  
Dual Supply  
Operating Range  
2.2  
Power Supply Rejection Ratio  
Operating Temperature Range  
59  
–40  
62  
dB  
°C  
+85  
NOTES  
1Output current is defined here as the highest current load delivered by the output of each amplifier into a specified resistive load ( RL = 10 ), while maintaining an  
acceptable distortion level (i.e., less than –60 dBc highest harmonic) at a given frequency (f = 1 MHz).  
Specifications subject to change without notice.  
REV. A  
–3–  
AD8017  
ABSOLUTE MAXIMUM RATINGS1  
The output stage of the AD8017 is designed for maximum load  
current capability. As a result, shorting the output to common  
can cause the AD8017 to source or sink 500 mA. To ensure  
proper operation, it is necessary to observe the maximum power  
derating curves. Direct connection of the output to either power  
supply rail can destroy the device.  
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.2 V  
Internal Power Dissipation2  
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W  
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . VS  
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .  
2.5 V  
Output Short Circuit Duration  
2.0  
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves  
Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C  
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C  
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C  
1.5  
NOTES  
1Stresses above those listed under Absolute Maximum Ratings may cause perma-  
nent damage to the device. This is a stress rating only; functional operation of the  
device at these or any other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability.  
2Specification is for device on a two-layer board with 2500 mm2 of 2 oz. copper at  
+25°C 8-lead SOIC package: θJA = 95.0°C/W.  
T
= +150؇C  
J
1.0  
T
= +125؇C  
J
0.5  
0
MAXIMUM POWER DISSIPATION  
The maximum power that can be safely dissipated by the AD8017  
is limited by the associated rise in junction temperature. The  
maximum safe junction temperature for plastic encapsulated  
device is determined by the glass transition temperature of the  
plastic, approximately +150°C. Temporarily exceeding this limit  
may cause a shift in parametric performance due to a change in  
the stresses exerted on the die by the package. Exceeding a junc-  
tion temperature of +175°C for an extended period can result in  
device failure.  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
AMBIENT TEMPERATURE ؇C  
Figure 3. Plot of Maximum Power Dissipation vs.  
Temperature for AD8017  
ORDERING GUIDE  
Model  
Temperature Range  
Package Description  
Package Option  
AD8017AR  
AD8017AR-REEL  
AD8017AR-REEL7 –40°C to +85°C  
AD8017AR-EVAL  
–40°C to +85°C  
–40°C to +85°C  
8-Lead SOIC  
SO-8  
SO-8  
SO-8  
Tape and Reel 13"  
Tape and Reel 7"  
Evaluation Board  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection.  
Although the AD8017 features proprietary ESD protection circuitry, permanent damage may  
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD  
precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
–4–  
REV. A  
Typical Performance CharacteristicsAD8017  
619  
619⍀  
619⍀  
619⍀  
V
V
V
IN  
OUT  
OUT  
R
R
54.4⍀  
L
L
V
IN  
+V  
+V  
S
S
49.9⍀  
+
+
0.1F  
0.1F  
10F  
0.1F  
0.1F  
10F  
+
+
10F  
10F  
V  
V  
S
S
Figure 4. Test Circuit: Gain = +2  
Figure 7. Test Circuit: Gain = –1  
OUTPUT = 100mV  
OUTPUT = 100mV  
INPUT = 100mV  
INPUT = 50mV  
200ns/DIV  
200ns/DIV  
Figure 8. 100 mV Step Response; G = –1, VS = 2.5 V or  
6 V, RL = 100  
Figure 5. 100 mV Step Response; G = +2, VS = 2.5 V or  
6 V, RL = 100 Ω  
OUTPUT = 4V  
OUTPUT = 4V  
INPUT = 2V  
INPUT = 4V  
200ns/DIV  
200ns/DIV  
Figure 9. 4 V Step Response; G = –1, VS = 6 V,  
RL = 100 Ω  
Figure 6. 4 V Step Response; G = +2, VS = 6 V,  
RL = 100 Ω  
REV. A  
–5–  
AD8017  
0
0
V
= 2V p-p  
V
= 2V p-p  
OUT  
G = +2  
OUT  
G = +2  
20  
40  
20  
40  
60  
80  
60  
2ND  
2ND  
80  
3RD  
3RD  
100  
100  
120  
120  
1
10  
FREQUENCY MHz  
100  
0.1  
0.1  
1
10  
FREQUENCY MHz  
100  
Figure 10. Distortion vs. Frequency; VS = 6 V, RL = 100 Ω  
Figure 13. Distortion vs. Frequency; VS = 2.5 V, RL = 100 Ω  
0
0
V
= 2V p-p  
V
= 2V p-p  
OUT  
G = +2  
OUT  
G = +2  
10  
20  
30  
20  
40  
60  
40  
50  
2ND  
2ND  
60  
70  
3RD  
3RD  
80  
80  
90  
100  
0.1  
1
10  
FREQUENCY MHz  
100  
0.1  
1
10  
FREQUENCY MHz  
100  
Figure 11. Distortion vs. Frequency; VS = 6 V, RL = 25 Ω  
Figure 14. Distortion vs. Frequency; VS = 2.5 V, RL = 25 Ω  
20  
20  
V
R
= ؎2.5V  
= 25⍀  
S
L
V
R
= ؎6V  
= 25⍀  
S
V
R
= ؎6V  
= 10⍀  
S
30  
40  
30  
40  
50  
L
L
V
S
= ؎2.5V  
= 5⍀  
V
R
= ؎2.5V  
= 10⍀  
S
R
L
L
V
R
= ؎6V  
= 5⍀  
S
L
50  
60  
70  
60  
70  
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
600  
OUTPUT CURRENT mA  
OUTPUT CURRENT mA  
Figure 12. Distortion vs. Output Current; VS = 6 V,  
f = 1 MHz, G = +2  
Figure 15. Distortion vs. Output Current; VS = 2.5 V,  
f = 1 MHz, G = +2  
–6–  
REV. A  
AD8017  
20  
40  
0
20  
40  
60  
80  
60  
2ND  
80  
2ND  
3RD  
100  
120  
140  
100  
3RD  
120  
140  
0
10  
100  
1000  
0
10  
100  
1000  
LOAD RESISTANCE ⍀  
LOAD RESISTANCE ⍀  
Figure 16. Distortion vs. RL, VS = 6 V, G = +2, VOUT = 2 V p-p,  
f = 1 MHz  
Figure 19. Distortion vs. RL, VS = 2.5 V, G = +2,  
VOUT = 2 V p-p, f = 1 MHz  
0
0
V
= ؎6V  
V
= ؎2.5V  
S
S
f = 1MHz  
G = +2  
f = 1MHz  
G = +2  
10  
10  
20  
30  
40  
50  
20  
30  
40  
50  
60  
R
= 25⍀  
R
= 25⍀  
L
L
60  
70  
80  
R
= 100⍀  
L
70  
80  
R
= 100⍀  
L
0
1
2
3
4
5
6
0
0.5  
1.0  
1.5  
2.0  
2.5  
OUTPUT VOLTAGE Volts  
OUTPUT VOLTAGE Volts  
Figure 17. Distortion vs. Output Voltage, VS = 6 V, G = +2,  
f = 1 MHz  
Figure 20. Distortion vs. Output Voltage, VS = 2.5 V,  
G = +2, f = 1 MHz  
0
0
V
= ؎6V  
S
V
= ؎2.5V  
S
f = 10MHz  
G = +2  
10  
10  
20  
30  
40  
50  
60  
70  
80  
f = 10MHz  
G = +2  
20  
30  
40  
R
= 25⍀  
L
R
= 25⍀  
L
50  
60  
70  
R
= 100⍀  
L
R
= 100⍀  
L
0
1
2
3
4
5
6
0
0.5  
1
1.5  
2
2.5  
OUTPUT VOLTAGE Volts  
OUTPUT VOLTAGE Volts  
Figure 18. Distortion vs. Output Voltage, VS = 6 V, G = +2,  
f = 10 MHz  
Figure 21. Distortion vs. Output Voltage, VS = 2.5 V,  
G = +2, f = 10 MHz  
REV. A  
–7–  
AD8017  
2
1
3
R
= 100⍀  
L
R
= 100⍀  
L
0
GAIN = +2  
0
1  
2  
3  
4  
5  
6  
GAIN = +10  
GAIN = +2  
GAIN = +5  
GAIN = +10  
3  
GAIN = +5  
6  
0.1  
1
10  
100  
1000  
1
10  
100  
1000  
FREQUENCY MHz  
FREQUENCY MHz  
Figure 25. Frequency Response; VS = 2.5 V  
Figure 22. Frequency Response; VS = 6 V  
0.3  
0.3  
G = +2  
R
= 100⍀  
L
0.2  
0.1  
G = +2  
0.2  
0.1  
R
= 100  
L
0.0  
0.0  
0.1  
0.2  
0.3  
0.1  
0.2  
0.3  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
0.1  
FREQUENCY MHz  
FREQUENCY MHz  
Figure 26. Gain Flatness; VS = 2.5 V  
Figure 23. Gain Flatness; VS = 6 V  
3
0
0
3  
V
= 1V  
RMS  
OUT  
V
= 2V p-p  
OUT  
3  
6  
6  
9  
9  
12  
15  
18  
21  
12  
15  
18  
21  
24  
27  
30  
G = +2  
= 100  
R
24  
27  
30  
33  
L
G = +2  
= 100⍀  
R
L
0.1  
1
10  
FREQUENCY MHz  
100  
1000  
0.1  
1
10  
100  
1000  
FREQUENCY MHz  
Figure 27. Output Voltage vs. Frequency; VS = 2.5 V  
Figure 24. Output Voltage vs. Frequency; VS = 6 V  
–8–  
REV. A  
AD8017  
120  
100  
+20  
0
80  
60  
40  
20  
0
20  
40  
60  
80  
0
2
4
6
8
0
50  
100  
150  
SERIES RESISTANCE  
FREQUENCY kHz  
Figure 31. RS and CL vs. 30% Overshoot  
Figure 28. Multitone Power Ratio: VS = 6 V, 13 dBm  
Output Power into 25 Ω  
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
PSRR  
+PSRR  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
FREQUENCY MHz  
FREQUENCY MHz  
Figure 32. PSRR vs. Frequency; VS = 6 V or VS = 2.5 V  
Figure 29. CMRR vs. Frequency; VS = 6 V or VS = 2.5 V  
180  
120  
60  
1000  
100  
10  
12  
10  
8
0.4  
0.3  
PHASE  
6
0.2  
0.1  
0
TRANSIMPEDANCE  
iN  
eN  
4
2
1
0
1000  
0
100  
0.001  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
FREQUENCY MHz  
FREQUENCY kHz  
Figure 33. Open-Loop Transimpedance and Phase vs.  
Frequency  
Figure 30. Noise vs. Frequency  
REV. A  
–9–  
AD8017  
6
5
G = +2  
V
= 2V  
- 100  
= ؎6V  
OUT  
STEP  
V
4
OUT  
R
L
S
V
3
+2mV  
(+0.1%)  
2
1
0
0
V
IN  
1  
2  
2mV  
(+0.1%)  
10  
10  
30  
50  
70  
90  
110  
130  
150  
2
1
0
V
IN  
0
10 20 30 40 50 60 70 80 90  
TIME ns  
3  
3  
3  
4  
5  
6  
Figure 34. Settling Time; VS = 6.0 V  
V
OUT  
20  
30  
40  
50  
V
= 2V p-p  
OUT  
G = +2  
= 100⍀  
10  
10  
30  
50  
70  
TIME ns  
90  
110  
130  
150  
R
L
Figure 37. Overload Recovery; VS = 6 V, G = +2,  
RL = 100 , VIN = 5 V p-p, T = 1 µs  
60  
70  
80  
90  
100  
0.1  
1
10  
100  
1000  
FREQUENCY MHz  
Figure 35. Output Crosstalk vs. Frequency  
1000000  
100  
10  
1
Z
IN  
100000  
10000  
1000  
Z
OUT  
0.1  
1000  
0.1  
1
10  
100  
FREQUENCY MHz  
Figure 36. Input and Output Impedance vs. Frequency  
–10–  
REV. A  
AD8017  
THEORY OF OPERATION  
Overall, when “high” external load drive and low ac distortion is  
a requirement, a twin gain stage integrating amplifier like the  
AD8017 will provide excellent results for low power over the  
traditional single stage complementary devices. In addition,  
being a CF amplifier, closed-loop BW variations versus external  
gain variations (varying RG) will be much lower compared to a  
VF op amp, where the BW varies inversely with gain. Another  
key attribute of this amplifier is its ability to run on a single 5 V  
supply due in part to its wide common-mode input and output  
voltage range capability. For 5 V supply operation, the device  
obviously consumes less than half the quiescent power (vs. 12 V  
supply) with little degradation in its ac and dc performance  
characteristics. See specification pages for comparisons.  
The AD8017 is a dual high speed CF amplifier that attains new  
levels of bandwidth (BW), power, distortion and signal swing,  
under heavy current loads. Its wide dynamic performance (in-  
cluding noise) is the result of both a new complementary high  
speed bipolar process and a new and unique architectural  
design. The AD8017 basically uses a two gain stage complemen-  
tary design approach versus the traditional “single stage”  
complementary mirror structure sometimes referred to as the  
Nelson amplifier. Though twin stages have been tried before,  
they typically consumed high power since they were of a folded  
cascode design much like the AD9617.  
This design allows for the standing or quiescent current to add  
to the high signal or slew current-induced stages. In the time  
domain, the large signal output rise/fall time and slew rate is  
typically controlled by the small signal BW of the amplifier and  
the input signal step amplitude respectively, not the dc quies-  
cent current of the gain stages (with the exception of input level  
shift diodes Q1/Q2). Using two stages as opposed to one, also  
allows for a higher overall gain bandwidth product (GBWP) for  
the same power, thus providing lower signal distortion and the  
ability to drive heavier external loads. In addition, the second  
gain stage also isolates (divides down) A3’s input reflected load  
drive and the nonlinearities created resulting in relatively lower  
distortion and higher open-loop gain. See Figure 38.  
DC GAIN CHARACTER  
Gain stages A1/A1 and A2/A2 combined provide negative  
feedforward transresistance gain. See Figure 38. Stage A3 is a  
unity gain buffer which provides external load isolation to A2.  
Each stage uses a symmetrical complementary design. (A3 is  
also complementary, though not explicitly shown). This is done  
to reduce both second order signal distortion and overall quies-  
cent power as discussed above. In the quasi dc-to-low frequency  
region, the closed loop gain relationship can be approximated as:  
G = 1+RF/RG for Noninverting Operation  
G = –RF/RG for Inverting Operation  
These basic relationships above are common to all traditional  
operational amplifiers.  
C
D
A1  
Z1 = R1 || C1  
Z1  
IPN  
IQ1  
IPP  
V  
I
A2  
C 1  
P
Q3  
C 2  
P
ICQ + IO  
IR + IFC  
Q1  
V
V
N
P
V
9
O
Z1  
+
A3  
V
O
R
C
L
L
Z2  
R
Q2  
F
IE  
R
N
Q4  
IR IFC  
ICQ IO  
Z1  
IQ1  
A2  
V  
I
INP  
C 1  
P
IPN  
AD8017  
A1  
C
D
Figure 38. Simplified Block Diagram  
REV. A  
–11–  
AD8017  
APPLICATIONS  
Single +12 V Supply ADSL Remote Terminal (RT) Transmitter  
For consumer use, it is desirable to create an ADSL modem  
that can be a plug-in accessory for a PC. In such an application,  
the circuit should dissipate a minimum of power, yet still meet  
the ADSL specification.  
Output Power Characteristics as Applied to ADSL Signals  
The AD8017 was designed to provide both relatively high cur-  
rent and voltage output capability. Figures 17 and 20 quantify  
the ac load current versus distortion of the device at loads of  
100 and 25 at 1 MHz. Using approximately –50 dBc as the  
worst case distortion limit, the AD8017 exhibits acceptable  
linearity to within approximately 1.4 V of either supply rail (12 V  
or 6 V) while simultaneously providing 200 mA of load cur-  
rent. These levels are achieved at only 7 mA of quiescent cur-  
rent for each amplifier.  
The circuit in Figure 39 shows a single +12 V supply circuit  
that uses the AD8017 as a remote terminal transmitter. This  
supply voltage is readily available on the PCI connector of PCs.  
The circuit configures each half of the AD8017 as an inverter  
with a gain of about six. Both of the amplifier circuits are ac  
coupled at both the inputs and the outputs. This makes the dc  
levels of the circuit independent of the other dc levels of the  
signal chain.  
ADSL applications require signal line powers of 13 dBm that  
can randomly peak to an instantaneous power (or V × I product)  
of 28.5 dBm. This equates to peak-to-rms voltage ratio of 5.3-  
to-1. Using a 1:2 transformer in the ADSL circuit illustrated  
below and 100 as the line resistance, a peak voltage of 4.2 V  
at a peak current of 168 mA will be required from the line driver  
output (see Table I). See detailed application below. A higher  
turns ratio transformer can be used to reduce the primary out-  
put voltage swing of the amplifier (for devices that do not have  
the voltage swing, but do have the current drive capability).  
However, this requires more than an equivalent increase in  
current due to the added I × R losses from the transformer for  
the same receiver power. Generally this will result in added  
distortion. Table I below shows the ADSL ac current and volt-  
ages required for both a 1:1 and 1:2 transformer turns ratio.  
The inputs will generally be driven by the output of an active  
filter, which has a low output impedance. Thus there will be a  
minimum of loading of the source caused by the 169 input  
impedance in the pass band. The output will require a 1:2 step-  
up transformer to drive a 100 line. The reflected impedance  
back to the primary will be 25 . With 25 of series termina-  
tion added (12.5 in each output), the effective load that the  
differential amplifier outputs will drive is 50 .  
The input and output ac coupling provides two high pass cir-  
cuits. The inputs are formed by the 0.1 µF capacitor and the  
169 resistor, which provides a break frequency of about  
9.4 kHz. The two 1 µF capacitors in the output along with the  
50 effective load provides a 6.4 kHz break frequency in the  
output side. Both of these circuits want to reject the Plain Old  
Telephone System (POTS) band (dc to 4 kHz) while passing  
the ADSL upstream band, which starts at about 20 kHz.  
+12V  
0.1F  
0.1F  
10F  
169⍀  
1k⍀  
The positive inputs must be biased at mid supply, which is  
nominally +6 V. This will maintain the maximum dynamic  
range of the output in each direction, regardless of the tolerance  
of the supply. The inverting configuration was chosen as this  
requires a steady dc current from this supply, as opposed to the  
signal-dependent current that would be required in a noninvert-  
ing configuration. Several options were studied for creating this  
supply.  
2
8
1F  
1:2  
12.5⍀  
1
4.7V  
3
50⍀  
EFFECTIVE  
LOAD  
1k⍀  
V
V
OUT  
AD8017  
100⍀  
IN  
0.1F  
1k⍀  
5
6
7
4.7V  
12.5⍀  
1F  
4
169⍀  
A voltage regulator could be used, but there are several disad-  
vantages. The first is that this will not track the middle of the  
supplies as it will always have an output that is a fixed voltage  
from ground. This also requires an additional active component  
that will impact the cost of the total solution.  
1k⍀  
0.1F  
Figure 39. Single +12 V Supply ADSL Remote Terminal  
Transmitter  
A two-resistor divider could also be used. There is a tradeoff  
required here in the selection of the value of the resistors. As the  
resistors become smaller, the amount of power that they will  
dissipate will increase. For two 1 kresistors, the power dissi-  
pation in this circuit would be 72 mW. Thus, in order to keep  
this power to a minimum, it is desirable to make the resistors as  
large as possible.  
Table I. DSL Drive Amplifier Requirements for Various Combinations of Line Power, Line Impedance and Turn Ratios  
Line  
Power  
Insertion Line  
Loss Load  
Turns Crest  
Ratio Factor Impedance R1 = R2 Voltage  
Reflected  
Per Amp  
Peak Per Amplifier Peak Current  
Voltage Output  
Output  
13 dBm 1 dB  
13 dBm 1 dB  
100 1:1  
100 1:2  
5.3  
5.3  
100 Ω  
25 Ω  
50 Ω  
12.5 Ω  
1.585 V rms  
0.792 V rms  
8.4 V peak  
4.2 V peak  
84 mA  
168 mA  
–12–  
REV. A  
AD8017  
VCC  
The practical maximum value that these resistors can have is  
determined by the offset voltage that is created by the input bias  
current that flows through them. The maximum input bias  
current into the + inputs is 45 µA. This will create an offset  
voltage of 45 mV per 1 kof bias resistor. Fortunately, the ac  
coupling of the stages provides only unity gain for this dc offset  
voltage, which is another advantage of this configuration. Any  
dc offset in the output will limit the amount of dynamic signal  
swing that will be available between the rails.  
A1  
V
V
O1  
R
L
A1  
O2  
The circuit shown uses two 4.7 V Zener diodes that provide a  
voltage drop which serves to limit the power dissipation in the  
bias circuit. This allows the use of smaller value resistors in the  
bias circuit. Thus, for this circuit the current will be (12 V –  
(2 × 4.7 V))/2 k= 1.3 mA. Thus, this circuit will dissipate  
only 15.6 mW, yet only induce a maximum of 40 mV of offset  
at the output. This circuit will also track the midpoint of the  
supplies over their specified tolerance range.  
VEE  
Figure 40. Differential Driver Simplified Circuit Schematic  
It is important to consider the total power dissipation of the  
AD8017 in order to properly size the heatsinking area for your  
application. The dc power dissipation for VIN = 0 is simply,  
IQ. (VCC + VEE), or 2 × IQ × VS. For the AD8017, this number is  
0.17 W. In this purely differential circuit we can use symmetry  
to simplify the computation for a dc input signal,  
The distortion of the circuit was measured with a 50 load.  
The frequency used was 500 kHz, which is beyond the maxi-  
mum required for the upstream signal. For ADSL over POTS, a  
maximum frequency of 135 kHz is required. For ADSL over  
ISDN, the maximum frequency is 276 kHz. The amplitude was  
20 V p-p (10 V p-p for each amplifier), which is the maximum  
crest signal that will be required. The second harmonic was  
better than –80 dBc, while the third harmonic was –64 dBc.  
This represents a worst case of the absolute maximum signal  
that will be required for only a very small statistical basis and at  
a frequency that is higher than the maximum required. For a  
statistical majority of the time, the signal will be at a lower am-  
plitude and frequency, where the distortion performance will be  
better.  
VO  
RL  
PD = 2× IQ ×VS +4× VS VO  
×
(
)
This formula is slightly pessimistic due to the fact that some of  
the quiescent supply current commutates during sourcing or  
sinking current into the load. For a sine wave source, integra-  
tion over a half cycle yields:  
2
4VOVS VO  
π RL  
P = 2× I ×V +2×  
D
Q
S
(Refer to Figure 41)  
R
L   
The situation is more complicated with a complex modulated  
signal. In the case of a DMT signal, taking the equivalent sine  
wave power overestimates the power dissipation by > 15%. For  
example:  
When the circuit was run while providing the upstream drive  
signal in an ADSL system, the supply current to the part was  
measured at 25 mA. Thus, the total power to the drive circuit  
was 300 mW. This power winds up in three places: the drive  
amplifier, down the line and in the termination and interface  
circuitry.  
P
V
OUT = 16 dBm = 40 mW  
OUT @ 50 = 1.41 V rms or VO = 1.0 V  
at each amplifier output, which yields a PD of 0.436 W. By  
actual measurement, PD for a DMT signal of 16 dBm requires  
0.38 W of power to be dissipated by the AD8017.  
The ADSL specification calls for 13 dBm or 20 mW into the  
line. The line termination will consume an equal amount of  
power, as it is the same resistance value. About a 1 dB loss can  
be expected in the losses in the interface circuitry, which trans-  
lates into about 10 mW of power. Thus, the total power dissi-  
pated in the AD8017 when used as a driver in this application is  
about 250 mW.  
REV. A  
–13–  
AD8017  
area of copper foil without affecting the ac performance of the  
part. On the surface side of the board, the copper area that  
connects to Pins 4 and 8 should be enlarged and spread out to  
the maximum extent possible. As a practical matter, there will  
be diminishing returns from adding copper more than a few  
centimeters from the pins.  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
When the power supplies are run on the board on internal  
power planes, then these should also be made as large as practi-  
cal, and multiple vias (~0.012 in. or 0.3 mm) should be pro-  
vided from the component layer near the power supply pins of  
the AD8017 to the inner layers. These vias should not have any  
of the traditional thermal reliefspokes to the planes, because  
the function of these is to impede heat flow for ease of soldering.  
This is counter to the effect desired for heatsinking.  
0
0
1
2
3
4
5
6
OUTPUT VOLTAGE (V ) V  
O
PK  
On the side of the board opposite the component, additional  
heatsinking can be provided by adding copper area near the vias  
to further lower the thermal resistance. Additional vias can be  
provided throughout to better conduct heat from the inner  
layers to the outer layers.  
Figure 41. Power Dissipation (PD) vs. Output Voltage (VO),  
RL = 50 Ω  
Thermal Considerations  
The AD8017 in a Thermal CoastlineSO-8 package relies on  
the device pins to assist in removing heat from the die at a faster  
rate than that of conventional packages. The effect is to provide  
a lower θJC for the device. To make the most effective use of  
this, special details should be worked into the copper traces of  
the printed circuit board.  
The remainder of the device pins are active signal pins and must  
be treated a bit more carefully. Pins 2 and 6 are the summing  
junctions of the op amps and will be the most adversely affected by  
stray capacitance. For this reason, the copper area of these pins  
should be minimized. In addition, the copper nearby on the  
component layer should be kept more than 3 mm5 mm away  
from these pins, where possible. The inner and opposite side  
circuit layers directly below the summing junctions should also  
be void of copper.  
There will be a tradeoff, however, between designing a board  
that will maximally remove heat, and one that will provide the  
desired ac performance. This is the result of the additional para-  
sitic capacitance on some of the pins that would be caused by  
the addition of extra heatsinking copper traces.  
The positive inputs and outputs can withstand somewhat more  
capacitance than the summing junctions without adversely af-  
fecting ac performance. However, these pins should be treated  
carefully, and the amount of heatsinking and excess capacitance  
should be analyzed and adjusted depending on the application.  
If maximum ac performance is desired and the power dissipa-  
tion is not extreme, then the copper area connected to these  
pins should be minimized. If the ac performance is not very  
critical and maximum power must be dissipated, then the cop-  
per area connected to these pins can be increased. As in many  
other areas of analog design, the designer must use some judg-  
ment based on the consideration of the above, in order to pro-  
duce a satisfactory design.  
The first technique for maximum heatsinking is to use a heavy  
layer of copper. 2 oz. copper will provide better heatsinking than  
1 oz. copper. Additional internal circuit layers can also be used  
to more effectively remove heat, and to provide better power  
and ground distribution.  
There are no groundpins per se on the AD8017 (when run  
on a dual supply), but the power supplies (Pins 4 and 8) are at  
ac ground. Thus, these pins can be safely tied to a maximum  
–14–  
REV. A  
AD8017  
LAYOUT CONSIDERATIONS  
The specified high speed performance of the AD8017 requires  
careful attention to board layout and component selection.  
Table II shows recommended component values for the AD8017  
and Figures 4244 show recommended layouts for the 8-lead  
SOIC package for a positive gain. Proper RF design techniques  
and low parasitic component selections are mandatory.  
Table II. Typical Bandwidth vs. Gain Setting Resistors  
(VS = 6 V, RL = 100 )  
Small Signal  
–3 dB BW (MHz)  
Gain  
RF ()  
RG () RT ()  
1  
619  
619  
619  
619  
619  
54.5  
49.9  
49.9  
49.9  
110  
320  
160  
40  
Figure 43. Universal SOIC Noninverter Top  
+1  
+2  
+10  
619  
68.8  
RT chosen for 50 characteristic input impedance.  
The PCB should have a ground plane covering all unused  
portions of the component side of the board to provide a low  
impedance ground path. The ground plane should be removed  
from the area near the input pins to reduce stray capacitance.  
Chip capacitors should be used for supply bypassing (see Fig-  
ures 4 and 7). One end should be connected to the ground  
plane and the other within 1/8 in. of each power pin. An addi-  
tional (4.7 µF10 µF) tantalum electrolytic capacitor should be  
connected in parallel.  
The feedback resistor should be located close to the inverting  
input pin in order to keep the stray capacitance at this node to  
a minimum. Capacitance greater than 1.5 pF at the inverting  
input will significantly affect high speed performance when  
operating at low noninverting gain.  
Figure 44. Universal SOIC Noninverter Bottom  
Figure 42. Universal SOIC Noninverter Top Silkscreen  
REV. A  
–15–  
AD8017  
OUTLINE DIMENSIONS  
Dimensions shown in inches and (mm).  
8-Lead SOIC  
(SO-8)  
0.1968 (5.00)  
0.1890 (4.80)  
8
1
5
4
0.1574 (4.00)  
0.1497 (3.80)  
0.2440 (6.20)  
0.2284 (5.80)  
PIN 1  
0.0688 (1.75)  
0.0532 (1.35)  
0.0196 (0.50)  
0.0099 (0.25)  
x 45°  
0.0098 (0.25)  
0.0040 (0.10)  
8°  
0°  
0.0500  
(1.27)  
BSC  
0.0192 (0.49)  
0.0138 (0.35)  
SEATING  
PLANE  
0.0098 (0.25)  
0.0075 (0.19)  
0.0500 (1.27)  
0.0160 (0.41)  
–16–  
REV. A  

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