AD8079 [ADI]
Dual 260 MHz Gain = +2.0 & +2.2 Buffer; 双260 MHz增益= 2.0 ＆ 2.2缓冲区
| 型号： | AD8079 |
| 厂家： | 
ADI |
| 描述： | Dual 260 MHz Gain = +2.0 & +2.2 Buffer |
| 文件： | 总12页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Dual 260 MHz
Gain = +2.0 & +2.2 Buffer
a
AD8079
FUNCTIONAL BLOCK DIAGRAM
8-Pin Plastic SOIC
FEATURES
Factory Set Gain
AD8079A: Gain = +2.0 (Also +1.0 & –1.0)
AD8079B: Gain = +2.2 (Also +1 & –1.2)
Gain of 2.2 Compensates for System Gain Loss
Minimizes External Components
Tight Control of Gain and Gain Matching (0.1%)
Optimum Dual Pinout
+IN1
GND
GND
+IN2
1
2
3
4
8
7
6
5
OUT1
+V
S
AD8079
–V
S
Simplifies PCB Layout
OUT2
Low Crosstalk of –70 dB @ 5 MHz
Excellent Video Specifications (RL = 150 ⍀)
Gain Flatness 0.1 dB to 50 MHz
cables and transformers. Its low distortion and fast settling are
ideal for buffering high speed dual or differential A-to-D con-
verters.
0.01% Differential Gain Error
0.02؇ Differential Phase Error
Low Power of 50 mW/Amplifier (5 mA)
High Speed and Fast Settling
260 MHz, –3 dB Bandwidth
750 V/s Slew Rate (2 V Step), 800 V/s (4 V Step)
40 ns Settling Time to 0.1% (2 V Step)
Low Distortion of –65 dBc THD, fC = 5 MHz
High Output Drive of Over 70 mA
Drives Up to 8 Back-Terminated 75 ⍀ Loads (4 Loads/
Side) While Maintaining Good Differential Gain/
Phase Performance (0.01%/0.17؇)
High ESD Tolerance (5 kV)
The AD8079 features a unique transimpedance linearization
circuitry. This allows it to drive video loads with excellent differ-
ential gain and phase performance of 0.01% and 0.02° on only
50 mW of power per amplifier. It features gain flatness of 0.1 dB
to 50 MHz. This makes the AD8079 ideal for professional video
electronics such as cameras and video switchers.
The AD8079 offers low power of 5 mA/amplifier (VS = ±5 V)
and can run on a single +12 V power supply while delivering
over 70 mA of load current. All of this is offered in a small 8-pin
SOIC package. These features make this amplifier ideal for por-
table and battery powered applications where size and power are
critical.
Available in Small 8-Pin SOIC
APPLICATIONS
Differential A-to-D Driver
Video Line Driver
Differential Line Driver
Professional Cameras
Video Switchers
The outstanding bandwidth of 260 MHz along with 800 V/µs of
slew rate make the AD8079 useful in many general purpose high
speed applications where dual power supplies of ±3 V to ±6 V
are required.
The AD8079 is available in the industrial temperature range of
–40°C to +85°C.
Special Effects
RF Receivers
1
0
PRODUCT DESCRIPTION
The AD8079 is a dual, low power, high speed buffer designed
to operate on ±5 V supplies. The AD8079’s pinout offers excel-
lent input and output isolation compared to the traditional dual
amplifier pin configuration. With two ac ground pins separating
both the inputs and outputs, the AD8079 achieves very low
crosstalk of less than –70 dB at 5 MHz.
R
V
= 100Ω
L
SIDE 2
–1
–2
–3
= 50mV rms
SIDE 1
IN
0.1
0
–0.1
–0.2
–0.3
–0.4
–0.5
–4
–5
Additionally, the AD8079 contains gain setting resistors factory
set at G = +2.0 (A grade) or Gain = +2.2 (B grade) allowing
circuit configurations with minimal external components. The
B grade gain of +2.2 compensates for gain loss through a system
by providing a single-point trim. Using active laser trimming of
these resistors, the AD8079 guarantees tight control of gain and
channel-channel gain matching. With its performance and con-
figuration, the AD8079 is well suited for driving differential
–6
–7
–8
–9
SIDE 2
50Ω
SIDE 1
50Ω
1M
10M
100M
1G
FREQUENCY – Hz
Figure 1. Frequency Response and Flatness
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
World Wide Web Site: http://www.analog.com
© Analog Devices, Inc., 1996
(@ T = +25؇C, V = ؎5 V, R = 100
⍀
, unless otherwise noted)
AD8079–SPECIFICATIONS
A
S
L
AD8079A/AD8079B
Parameter
Conditions
Min
Typ
Max
Units
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth
Bandwidth for 0.1 dB Flatness
Large Signal Bandwidth
Slew Rate
V
IN = 50 mV rms
260
50
100
750
800
40
MHz
MHz
MHz
V/µs
V/µs
ns
VIN = 50 mV rms
VIN = 1 V rms
VO = 2 V Step
VO = 4 V Step
VO = 2 V Step
VO = 2 V Step
Settling Time to 0.1%
Rise & Fall Time
2.5
ns
NOISE/HARMONIC PERFORMANCE
Total Harmonic Distortion
Crosstalk, Output to Output
Input Voltage Noise
Input Current Noise
Differential Gain Error
fC = 5 MHz, VO = 2 V p-p
f = 5 MHz
f = 10 kHz
f = 10 kHz, +In
NTSC, RL = 150 Ω
NTSC, RL = 75 Ω
NTSC, RL = 150 Ω
RL = 75 Ω
–65
–70
2.0
dBc
dB
nV/√Hz
pA/√Hz
%
%
Degree
Degree
2.0
0.01
0.01
0.02
0.07
Differential Phase Error
DC PERFORMANCE
Offset Voltage, RTO
10
10
20
3.0
15
20
mV
mV
µV/°C
±µA
±µA
TMIN–TMAX
Offset Drift, RTO
+Input Bias Current
6.0
10
TMIN–TMAX
Gain
No Load
RL = 150 Ω
Channel-to-Channel, No Load
Channel-to-Channel, RL = 150 Ω
1.998/2.198
1.995/2.195
2.0/2.2
2.0/2.2
0.1
2.002/2.202 V/V
2.005/2.205 V/V
Gain Matching
%
%
0.5
INPUT CHARACTERISTICS
+Input Resistance
+Input Capacitance
+Input
+Input
10
1.5
MΩ
pF
OUTPUT CHARACTERISTICS
Output Voltage Swing
RL = 150 Ω
RL = 75 Ω
2.7
3.1
2.8
70
±V
±V
mA
mA
Output Current1
Short Circuit Current1
85
110
POWER SUPPLY
Operating Range
±3.0
±6.0
V
Quiescent Current/Both Amplifiers
Power Supply Rejection Ratio, RTO
TMIN–TMAX
10.0
69
50
11.5
mA
dB
dB
+VS = +4 V to +6 V, –VS = –5 V
–VS = – 4 V to –6 V, +VS = +5 V
TMIN–TMAX
49
40
+Input Current
0.1
0.5
µA/V
NOTES
1Output current is limited by the maximum power dissipation in the package. See the power derating curves.
Specifications subject to change without notice.
REV. A
–2–
AD8079
ABSOLUTE MAXIMUM RATINGS1
MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
The maximum power that can be safely dissipated by the
AD8079 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±VS
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . .–65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
While the AD8079 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
1Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Pin SOIC Package: θJA = 160°C/Watt
2.0
T
= +150°C
J
1.5
1.0
0.5
0
9
8-PIN SOIC PACKAGE
–50 –40 –30 –20 –10
0
10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE –
°
C
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Temperature
Range
Package
Description
Package
Option
Model
Gain
AD8079AR
G = +2.0
G = +2.0
G = +2.0
G = +2.2
G = +2.2
G = +2.2
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
8-Pin Plastic SOIC
REEL SOIC
REEL 7 SOIC
8-Pin Plastic SOIC
REEL SOIC
SO-8
SO-8
SO-8
SO-8
SO-8
SO-8
AD8079AR-REEL
AD8079AR-REEL7
AD8079BR
AD8079BR-REEL
AD8079BR-REEL7
REEL 7 SOIC
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8079 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–3–
REV. A
AD8079
1
0
R
V
= 100Ω
L
SIDE 2
10µF
–1
–2
–3
+5V
= 50mV rms
SIDE 1
IN
0.1µF
0.1
7
AD8079
6
2
1
0
–0.1
–0.2
–0.3
–0.4
–0.5
–4
–5
8
0.1µF
R
= 100Ω
V
L
IN
PULSE
GENERATOR
–6
–7
–8
–9
SIDE 2
50Ω
10µF
50Ω
SIDE 1
50Ω
–5V
T
/T = 250ps
F
R
1M
10M
100M
1G
FREQUENCY – Hz
Figure 6. Frequency Response and Flatness
Figure 3. Test Circuit
–50
R
= 100Ω
L
100mV STEP
–60
–70
SIDE 1
2ND HARMONIC
–80
3RD HARMONIC
–90
–100
–110
SIDE 2
20mV
5ns
10k
100k
1M
FREQUENCY – Hz
10M
100M
Figure 7. Distortion vs. Frequency, RL = 100 Ω
Figure 4. 100 mV Step Response
–60
R
V
= 1kΩ
L
1V STEP
= 2Vp-p
OUT
–70
–80
SIDE 1
2ND HARMONIC
–90
3RD HARMONIC
–100
–110
–120
SIDE 2
5ns
200mV
10k
100k
1M
FREQUENCY – Hz
10M
100M
Figure 8. Distortion vs. Frequency, RL = 1 kΩ
Figure 5. 1 V Step Response
–4–
REV. A
AD8079
3
0
3
–10
–20
–30
–40
–50
–60
–70
–80
–90
V
R
= ±5V
V
V
= 1.0V rms
= 0.5V rms
= 0.25V rms
S
IN
IN
V
= 2V p-p
= 100Ω
= ±5V
IN
0
= 100Ω
L
R
V
L
–3
–3
S
–6
–6
–9
–9
V
IN
–12
–15
–18
–21
–12
–15
–18
–21
V
= 125mV rms
= 62.5mV rms
IN
V
IN
–24
–27
–24
–27
–100
–110
1M
10M
100M
500M
100k
0.1M
1M
10M
100M 200M
FREQUENCY – Hz
FREQUENCY – Hz
Figure 9. Crosstalk (Output-to-Output) vs. Frequency
Figure 12. Large Signal Frequency Response
5
0.02
2V STEP
2 BACK TERMINATED
NTSC
4
3
R
= 100Ω
C
L
0.01
0.00
LOADS (75Ω)
R
= 150Ω
9
2
–0.01
–0.02
1 BACK TERMINATED
LOAD (150Ω)
1
1
2
3
4
5
6
IRE
7
8
9
10
11
0
–1
–2
–3
–4
–5
0.08
0.06
2 BACK TERMINATED
LOADS (75Ω)
1 BACK TERMINATED
NTSC
LOAD (150Ω)
0.04
0.02
0.00
0
20
40
60
80
100
120
1
2
3
4
5
6
7
8
9
10
11
TIME – ns
IRE
Figure 13. Short-Term Settling Time
Figure 10. Differential Gain and Differential Phase
(per Amplifier)
R
= 100Ω
L
2V STEP
R
= 100Ω
L
SIDE 1
ERROR,
(0.05%/DIV)
SIDE 2
OUTPUT
INPUT
400mV
2µs
5ns
NOTES: SIDE 1: V = 0V; 8mV/div RTO
IN
SIDE 2: 1V STEP RTO; 400mV/div
Figure 14. Long-Term Settling Time
Figure 11. Pulse Crosstalk, Worst Case, 1 V Step
–5–
REV. A
AD8079
3.4
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
11.5
11.0
R
= 150Ω
L
V
= ±5V
S
+V
OUT
10.5
10.0
|–V
|
OUT
V
= ±5V
S
9.5
9.0
2.5
–55
–35
–15
5
25
45
65
85
105
125
–55
–35
–15
5
25
45
65
85
105
125
JUNCTION TEMPERATURE – °C
JUNCTION TEMPERATURE – °C
Figure 15. Output Swing vs. Temperature
Figure 18. Total Supply Current vs. Temperature
7
6
5
4
3
120
115
110
105
100
|SINK I
|
SC
SOURCE I
SC
95
90
85
+IN
2
1
0
80
75
–1
–55
–35
–15
5
25
45
65
85
105
125
70
–55
–35
–15
5
25
45
65
85
105
125
JUNCTION TEMPERATURE –
°C
JUNCTION TEMPERATURE – °C
Figure 16. Input Bias Current vs. Temperature
Figure 19. Short Circuit Current vs. Temperature
100
10
1
100
10
1
8
DEVICE #1
6
4
2
DEVICE #2
0
NONINVERTING CURRENT V = ±5V
S
DEVICE #3
–2
VOLTAGE NOISE V = ±5V
S
–4
–6
10
100
1k
10k
100k
–55
–35
–15
5
25
45
65
85
105
125
FREQUENCY – Hz
JUNCTION TEMPERATURE – °C
Figure 20. Noise vs. Frequency
Figure 17. Input Offset Voltage vs. Temperature
–6–
REV. A
AD8079
THEORY OF OPERATION
100
10
The AD8079, a dual current feedback amplifier, is internally
configured for a gain of either +2 (AD8079A) or +2.2
(AD8079B). The internal gain-setting resistors effectively elimi-
nate any parasitic capacitance associated with the inverting in-
put pin, accounting for the AD8079’s excellent gain flatness
response. The carefully chosen pinout greatly reduces the cross-
talk between each amplifier. Up to four back-terminated 75 Ω
video loads can be driven by each amplifier, with a typical dif-
ferential gain and phase performance of 0.01%/0.17°, respec-
tively. The AD8079B, with a gain of +2.2, can be employed as a
single gain-trimming element in a video signal chain. Finally,
the AD8079A/B used in conjunction with our AD8116 cross-
point matrix, provides a complete turn-key solution to video
distribution.
R
= 50Ω
bT
V
= ±5.0V
S
POWER = 0dBm
(223.6mV rms)
R
= 0Ω
1
bT
0.1
0.01
10k
100k
1M
10M
100M
1G
FREQUENCY – Hz
Printed Circuit Board Layout Considerations
Figure 21. Output Resistance vs. Frequency
As to be expected for a wideband amplifier, PC board parasitics
can affect the overall closed-loop performance. If a ground
plane is to be used on the same side of the board as the signal
traces, a space (5 mm min) should be left around the signal lines
to minimize coupling. Line lengths on the order of less than
5 mm are recommended. If long runs of coaxial cable are being
driven, dispersion and loss must be considered.
–44.0
–46.5
–PSRR
–49.0
9
–51.5
Power Supply Bypassing
2V SPAN
–54.0
Adequate power supply bypassing can be critical when optimiz-
ing the performance of a high frequency circuit. Inductance in
the power supply leads can form resonant circuits that produce
peaking in the amplifier’s response. In addition, if large current
transients must be delivered to the load, then bypass capacitors
(typically greater than 1 µF) will be required to provide the best
settling time and lowest distortion. A parallel combination of
4.7 µF and 0.1 µF is recommended. Some brands of electrolytic
capacitors will require a small series damping resistor ≈ 4.7 Ω
for optimum results.
CURVES ARE FOR WORST
CASE CONDITION WHERE
ONE SUPPLY IS VARIED
WHILE THE OTHER IS
–56.5
–59.0
HELD CONSTANT.
–61.5
–64.0
+PSRR
–66.5
–69.0
–55
–35
–15
5
25
45
65
85
105
125
JUNCTION TEMPERATURE – °C
DC Errors and Noise
Figure 22. PSRR vs. Temperature
There are three major noise and offset terms to consider in a
current feedback amplifier. For offset errors refer to the equa-
tion below. For noise error the terms are root-sum-squared to
give a net output error. In the circuit below (Figure 24) they are
input offset (VIO) which appears at the output multiplied by the
noise gain of the circuit (1 + RF/RI), noninverting input current
(IBN × RN) also multiplied by the noise gain, and the inverting
input current, which when divided between RF and RI and sub-
sequently multiplied by the noise gain always appears at the out-
put as IBN × RF. The input voltage noise of the AD8079 is a low
2 nV/√Hz. At low gains though the inverting input current noise
times RF is the dominant noise source. Careful layout and de-
vice matching contribute to better offset and drift specifications
for the AD8079 compared to many other current feedback am-
plifiers. The typical performance curves in conjunction with the
equations below can be used to predict the performance of the
AD8079 in any application.
0
–4
V
= 200mV
IN
–14
–24
–34
–44
–54
–64
–PSRR
+PSRR
–74
–84
30k 100k
1M
10M
100M
500M
FREQUENCY – Hz
RF
RI
RF
RI
VOUT =VIO × 1+
±IBN × RN × 1+
±IBI × RF
Figure 23. PSRR vs. Frequency
where:
RF = RI = 750 Ω for AD8079A
RF = 750 Ω, RI = 625 Ω for AD8079B
–7–
REV. A
AD8079
75Ω
R
F
CABLE
(INTERNAL)
75Ω
V
OUT
#1
R
I
I
I
BI
+V
7
(INTERNAL)
S
4.7µF
0.1µF
75Ω
R
SERIES
V
BN
OUT
R
N
C
L
75Ω
CABLE
2
1
75Ω
1/2
AD8079
V
OUT
#2
8
0.1µF
75Ω
6
Figure 24. Output Offset Voltage
Driving Capacitive Loads
75Ω
CABLE
4.7µF
V
IN
The AD8079 was designed primarily to drive nonreactive loads.
If driving loads with a capacitive component is desired, best
frequency response is obtained by the addition of a small series
output resistance (RSERIES). The graph in Figure 25 shows the
optimum value for RSERIES vs. capacitive load. It is worth noting
that the frequency response of the circuit when driving large
capacitive loads will be dominated by the passive roll-off of
–V
S
75Ω
75Ω
CABLE
4
3
1/2
AD8079
75Ω
75Ω
V
V
#3
#4
5
OUT
75Ω
75Ω
75Ω
CABLE
R
SERIES and CL.
OUT
40
30
20
10
Figure 26. Video Line Driver
Single-Ended to Differential Driver Using an AD8079
The two halves of an AD8079 can be configured to create a
single-ended to differential high speed driver with a –3 dB band-
width in excess of 110 MHz as shown in Figure 27. Although
the individual op amps are each current feedback with internal
feedback resistors, the overall architecture yields a circuit with
attributes normally associated with voltage feedback amplifiers,
while offering the speed advantages inherent in current feedback
amplifiers. In addition, the gain of the circuit can be changed by
varying a single resistor, RF, which is often not possible in a dual
op amp differential driver.
0
0
5
10
15
20
25
C
– pF
L
Figure 25. Recommended RSERIES vs. Capacitive Load
C
= 1.5pF
C
Operation as a Video Line Driver
The AD8079 has been designed to offer outstanding perfor-
mance as a video line driver. The important specifications of
differential gain (0.01%) and differential phase (0.02°) meet the
most exacting HDTV demands for driving one video load with
each amplifier. The AD8079 also drives four back terminated
loads (two each), as shown in Figure 26, with equally impressive
performance (0.01%, 0.07°). Another important consideration is
isolation between loads in a multiple load application. The
AD8079 has more than 40 dB of isolation at 5 MHz when driv-
ing two 75 Ω back terminated loads.
R
750Ω
F
R
G
750Ω
OP AMP #1
50Ω
V
IN
1/2
OUTPUT #1
AD8079
50Ω
1/2
AD8079
OUTPUT #2
OP AMP #2
Figure 27. Differential Line Driver
–8–
REV. A
AD8079
The current feedback nature of the op amps, in addition to
enabling the wide bandwidth, provides an output drive of more
than 3 V p-p into a 20 Ω load for each output at 20 MHz. On
the other hand, the voltage feedback nature provides symmetri-
cal high impedance inputs and allows the use of reactive compo-
nents in the feedback network.
6
4
2
C
V
= 1.3pF
C
= 10dBm
IN
0
–2
The circuit consists of the two op amps each configured as a
unity gain follower by the 750 Ω feedback resistors between
each op amp’s output and inverting input. The output of each
op amp has a 750 Ω resistor to the inverting input of the other
op amp. Thus, each output drives the other op amp through a
unity gain inverter configuration. By connecting the two ampli-
fiers as cross-coupled inverters, their outputs are free to be equal
and opposite, assuring zero-output common-mode voltage.
–4
–6
–8
OUT+
–10
OUT–
–12
–14
0.1M
1M
10M
100M
1G
FREQUENCY – Hz
With this circuit configuration, the common-mode signal of the
outputs is reduced. If one output moves slightly higher, the
negative input to the other op amp drives its output to go
slightly lower and thus preserves the symmetry of the comple-
mentary outputs which reduces the common-mode signal.
Figure 28. Differential Driver Frequency Response
Layout Considerations
The specified high speed performance of the AD8079 requires
careful attention to board layout and component selection.
Proper RF design techniques and low parasitic component se-
lection are mandatory.
The resulting architecture offers several advantages. First, the
gain can be changed by changing a single resistor. Changing
either RF or RG will change the gain as in an inverting op amp
circuit. For most types of differential circuits, more than one
resistor must be changed to change gain and still maintain good
CMR.
The PCB should have a ground plane covering all unused por-
tions of the component side of the board to provide a low im-
pedance ground path. The ground plane should be removed
from the area near the input pins to reduce stray capacitance.
9
Reactive elements can be used in the feedback network. This is
in contrast to current feedback amplifiers that restrict the use of
reactive elements in the feedback. The circuit described requires
about 1.3 pF of capacitance in shunt across RF in order to opti-
mize peaking and realize a –3 dB bandwidth of more than
110 MHz.
Chip capacitors should be used for supply bypassing (see Figure
29). One end should be connected to the ground plane and the
other within 1/8 in. of each power pin. An additional large
(4.7 µF–10 µF) tantalum electrolytic capacitor should be con-
nected in parallel, but not necessarily so close, to supply current
for fast, large-signal changes at the output.
The peaking exhibited by the circuit is very sensitive to the
value of this capacitor. Parasitics in the board layout on the or-
der of tenths of picofarads will influence the frequency response
and the value required for the feedback capacitor, so a good lay-
out is essential.
Stripline design techniques should be used for long signal traces
(greater than about 1 in.). These should be designed with a
characteristic impedance of 50 Ω or 75 Ω and be properly termi-
nated at each end.
The shunt capacitor type selection is also critical. Good micro-
wave type chip capacitors with high Q were found to yield best
performance.
–9–
REV. A
AD8079
+V
–V
S
IN
50Ω
OUT
R
T
S
Inverting Configuration
+V
–V
S
C1
0.1µF
C3
10µF
C2
0.1µF
C4
10µF
S
Supply Bypassing
Figure 30. Board Layout (Silkscreen)
+V
S
50Ω
OUT
IN
R
T
–V
S
*SEE TABLE I
Noninverting Configuration (G = +2)
TRIM
200Ω
AD8079B
OUT
IN
R
T
Figure 31. Board Layout (Component Layer)
Optional Gain Trim (G = +2 → +2.2)
TIE INPUT PINS
+V
S
TOGETHER
TO MINIMIZE
PEAKING
OUT
IN
R
T
–V
S
Noninverting Configuration (G = +1)
Figure 29. Inverting and Noninverting Configurations
Table I. Recommended Component Values
Component
–1
+1
+2/+2.2
Figure 32. Board Layout (Solder Side; Looking Through
the Board)
RT (Nominal) (Ω)
Small Signal BW (MHz)
0.1 dB Flatness (MHz)
53.6
220
50
49.9
750
100
49.9
260
50
–10–
REV. A
AD8079
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead SOIC (SO-8)
0.1968 (5.00)
0.1890 (4.80)
8
1
5
4
0.1574 (4.00)
0.1497 (3.80)
0.2440 (6.20)
0.2284 (5.80)
PIN 1
0.0688 (1.75)
0.0532 (1.35)
0.0196 (0.50)
0.0099 (0.25)
x 45°
0.0098 (0.25)
0.0040 (0.10)
8°
0°
0.0192 (0.49)
0.0138 (0.35)
0.0500
(1.27)
BSC
0.0098 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
SEATING
PLANE
9
–11–
REV. A
–12–
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