AD8231TCPZ-EP-R7 [ADI]
Zero Drift, Digitally Programmable Instrumentation Amplifier;
| 型号： | AD8231TCPZ-EP-R7 |
| 厂家： | 
ADI |
| 描述： | Zero Drift, Digitally Programmable Instrumentation Amplifier 放大器 |
| 文件： | 总20页 (文件大小：598K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zero Drift, Digitally Programmable
Instrumentation Amplifier
Data Sheet
AD8231-EP
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Digitally/pin-programmable gain
G = 1, 2, 4, 8, 16, 32, 64, or 128
Specified from −55°C to +125°C
50 nV/°C maximum input offset drift
10 ppm/°C maximum gain drift
Excellent dc performance
80 dB minimum CMR, G = 1
15 µV maximum input offset voltage
500 pA maximum bias current
0.7 µV p-p noise (0.1 Hz to 10 Hz)
Good ac performance
1
2
3
4
12
11
10
9
NC
–INA
+INA
NC
+V
–V
S
LOGIC
IN-AMP
S
OUTA
REF
OP
AD8231-EP
AMP
2.7 MHz bandwidth, G = 1
1.1 V/μs slew rate
Rail-to-rail output
Figure 1.
Shutdown/multiplex
Extra op amp
Single-supply range: 3 V to 6 V
Dual-supply range: 1.5 V to 3 V
Table 1. Instrumentation and Difference Amplifiers by
Category
High
Performance
Low
Cost
High
Voltage
Mil
Grade
Low
Power
Digital
Gain
ENHANCED PRODUCT FEATURES
AD8221
AD82201
AD8222
AD82241
AD6231
AD85531
AD628
AD629
AD620 AD6271 AD82311
Supports defense and aerospace applications (AQEC
standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
AD621
AD524
AD526
AD624
AD8250
AD8251
AD85551
AD85561
AD85571
One fabrication site
Enhanced product change notification
Qualification data available on request
1 Rail-to-rail output.
GENERAL DESCRIPTION
The AD8231-EP also includes an uncommitted op amp that can
be used for additional gain, differential signal driving, or filtering.
Like the in-amp, the op amp has an auto-zero architecture, rail-
to-rail input, and rail-to-rail output.
The AD8231-EP is a low drift, rail-to-rail, instrumentation
amplifier with software-programmable gains of 1, 2, 4, 8, 16, 32, 64,
or 128. The gains are programmed via digital logic or pin
strapping.
The AD8231-EP includes a shutdown feature that reduces current
to a maximum of 1 µA. In shutdown, both amplifiers also have
a high output impedance, which allows easy multiplexing of
multiple amplifiers without additional switches.
The AD8231-EP is ideal for applications that require precision
performance over a wide temperature range, such as industrial
temperature sensing and data logging. Because the gain setting
resistors are internal, maximum gain drift is only 10 ppm/°C for
gains of 1 to 32. Because of the auto-zero input stage, maximum
input offset is 15 µV and maximum input offset drift is just
50 nV/°C. CMRR is 80 dB for G = 1, increasing to 110 dB at
higher gains.
The AD8231-EP is specified over the military temperature
range of −55°C to +125°C. It is available in a 4 mm × 4 mm 16-
lead LFCSP.
Additional application and technical information can be found
in the AD8231 data sheet.
Rev. A
Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rightsof third parties that may result fromits use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2011–2017 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
AD8231-EP
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
ESD Caution...................................................................................7
Pin Configuration and Function Descriptions..............................8
Typical Performance Characteristics ..............................................8
Instrumentation Amplifier Performance Curves......................9
Operational Amplifier Performance Curves .......................... 15
Performance Curves Valid for Both Amplifiers..................... 17
Outline Dimensions....................................................................... 18
Ordering Guide .......................................................................... 18
Enhanced Product Features ............................................................ 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 7
Thermal Resistance ...................................................................... 7
Maximum Power Dissipation ..................................................... 7
REVISION HISTORY
11/2017—Rev. 0 to Rev. A
Changed CP-16-4 to CP-16-17 .................................... Throughout
Updated Outline Dimensions....................................................... 18
Changes to Ordering Guide .......................................................... 18
5/2011—Revision 0: Initial Version
Rev. A | Page 2 of 20
Data Sheet
AD8231-EP
SPECIFICATIONS
VS = 5 V, V REF = 2.5 V, G = 1, RL = 10 kΩ, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Test Conditions/Comments
VOS RTI = VOSI + VOSO/G
TA = −55°C to +125°C
TA = −55°C to +125°C
Min
Typ
Max
Unit
INSTRUMENTATION AMPLIFIER
Offset Voltage
Input Offset, VOSI
4
0.01
15
15
0.05
30
µV
µV/°C
µV
Average Temperature Drift
Output Offset, VOSO
Average Temperature Drift
Input Currents
0.05
0.5
µV/°C
Input Bias Current
250
20
500
5
100
0.5
pA
nA
pA
nA
TA = −55°C to +125°C
Input Offset Current
TA = −55°C to +125°C
Gains
1, 2, 4, 8, 16, 32, 64, or 128
Gain Error
G = 1
G = 2 to 128
Gain Drift
G = 1 to 32
G = 64
0.05
0.8
%
%
TA = −55°C to +125°C
3
4
10
3
5
10
20
30
ppm/°C
ppm/°C
ppm/°C
ppm
G = 128
Linearity
0.2 V to 4.8 V, 10 kΩ load
0.2 V to 4.8 V, 2 kΩ load
ppm
CMRR
G = 1
G = 2
G = 4
G = 8
G = 16
G = 32
G = 64
G = 128
Noise
Input Voltage Noise, eni
80
86
92
98
104
110
110
110
dB
dB
dB
dB
dB
dB
dB
dB
en = √(eni2 + (eno/G)2), VIN+, VIN− = 2.5 V
f = 1 kHz
f = 1 kHz, TA = −55°C
f = 1 kHz, TA = 125°C
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz, TA = −55°C
f = 1 kHz, TA = 125°C
f = 0.1 Hz to 10 Hz
f = 10 Hz
32
27
39
0.7
58
50
70
1.1
20
nV/√Hz
nV/√Hz
nV/√Hz
µV p-p
nV/√Hz
nV/√Hz
nV/√Hz
µV p-p
fA/√Hz
Output Voltage Noise, eno
Current Noise
Other Input Characteristics
Common-Mode Input Impedance
Power Supply Rejection Ratio
Input Operating Voltage Range
Reference Input
10||5
115
GΩ||pF
dB
V
100
0.05
4.95
+5.2
Input Impedance
Voltage Range
28
kΩ
V
−0.2
Rev. A | Page 3 of 20
AD8231-EP
Data Sheet
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
Dynamic Performance
Bandwidth
G = 1
G = 2
2.7
2.5
MHz
MHz
Gain Bandwidth Product
G = 4 to 128
Slew Rate
7
1.1
MHz
V/µs
Output Characteristics
Output Voltage High
RL = 100 kΩ to ground
RL = 10 kΩ to ground
RL = 100 kΩ to 5 V
RL = 10 kΩ to 5 V
4.9
4.8
4.94
4.88
60
80
70
V
V
mV
mV
mA
Output Voltage Low
100
200
Short-Circuit Current
Digital Interface
Input Voltage Low
TA = −55°C to +125°C
TA = −55°C to +125°C
TA = −55°C to +125°C
TA = −55°C to +125°C
1.0
V
V
ns
ns
Input Voltage High
Setup Time to CS High
Hold Time after CS High
4.0
50
20
OPERATIONAL AMPLIFIER
Input Characteristics
Offset Voltage, VOS
5
15
µV
Temperature Drift
Input Bias Current
TA = −55°C to +125°C
TA = −55°C to +125°C
TA = −55°C to +125°C
0.01
250
0.06
500
5
100
0.5
4.95
µV/°C
pA
nA
pA
nA
Input Offset Current
20
Input Voltage Range
Open-Loop Gain
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Voltage Noise Density
Voltage Noise
0.05
100
100
100
V
120
120
110
20
V/mV
dB
dB
nV/√Hz
µV p-p
f = 0.1 Hz to 10 Hz
0.4
Dynamic Performance
Gain Bandwidth Product
Slew Rate
1
0.5
MHz
V/µs
Output Characteristics
Output Voltage High
RL = 100 kΩ to ground
RL = 10 kΩ to ground
RL = 100 kΩ to 5 V
RL = 10 kΩ to 5 V
4.9
4.8
4.96
4.92
60
80
70
V
V
mV
mV
mA
Output Voltage Low
100
200
Short-Circuit Current
BOTH AMPLIFIERS
Power Supply
Quiescent Current
Quiescent Current (Shutdown)
4
0.01
5
1
mA
µA
Rev. A | Page 4 of 20
Data Sheet
AD8231-EP
VS = 3.0 V, VREF = 1.5 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted.
Table 3.
Parameter
Conditions
Min
Typ
Max
Unit
INSTRUMENTATION AMPLIFIER
Offset Voltage
VOS RTI = VOSI + VOSO/G
Input Offset, VOSI
4
15
µV
Average Temperature Drift
Output Offset, VOSO
Average Temperature Drift
Input Currents
0.01
15
0.05
0.05
30
0.5
µV/°C
µV
µV/°C
Input Bias Current
250
20
500
5
100
0.5
pA
nA
pA
nA
TA = −55°C to +125°C
Input Offset Current
TA = −55°C to +125°C
Gains
1, 2, 4, 8, 16, 32, 64, or 128
Gain Error
G = 1
0.05
0.8
%
%
G = 2 to 128
Gain Drift
G = 1 to 32
G = 64
G = 128
CMRR
TA = −55°C to +125°C
3
4
10
10
20
30
ppm/°C
ppm/°C
ppm/°C
G = 1
G = 2
G = 4
G = 8
G = 16
G = 32
G = 64
G = 128
Noise
80
86
92
98
104
110
110
110
dB
dB
dB
dB
dB
dB
dB
dB
en = √(eni2 + (eno/G)2)
IN+, VIN− = 2.5 V, TA = 25°C
V
Input Voltage Noise, eni
f = 1 kHz
40
35
48
0.8
72
62
83
1.4
20
nV/√Hz
nV/√Hz
nV/√Hz
µV p-p
nV/√Hz
nV/√Hz
nV/√Hz
µV p-p
fA/√Hz
f = 1 kHz, TA = −55°C
f = 1 kHz, TA = 125°C
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz, TA = −55°C
f = 1 kHz, TA = 125°C
f = 0.1 Hz to 10 Hz
f = 10 Hz
Output Voltage Noise, eno
Current Noise
Other Input Characteristics
Common-Mode Input Impedance
Power Supply Rejection Ratio
Input Operating Voltage Range
Reference Input
10||5
115
GΩ||pF
dB
V
100
0.05
2.95
+3.2
Input Impedance
Voltage Range
28
kΩ||pF
V
−0.2
Rev. A | Page 5 of 20
AD8231-EP
Data Sheet
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic Performance
Bandwidth
G = 1
G = 2
2.7
2.5
MHz
MHz
Gain Bandwidth Product
G = 4 to 128
Slew Rate
7
1.1
MHz
V/µs
Output Characteristics
Output Voltage High
RL = 100 kΩ to ground
RL = 10 kΩ to ground
RL = 100 kΩ to 3 V
RL = 10 kΩ to 3 V
2.9
2.8
2.94
2.88
60
80
40
V
V
mV
mV
mA
Output Voltage Low
100
200
Short-Circuit Current
Digital Interface
Input Voltage Low
TA = −55°C to +125°C
TA = −55°C to +125°C
TA = −55°C to +125°C
TA = −55°C to +125°C
0.7
V
V
ns
ns
Input Voltage High
Setup Time to CS High
Hold Time after CS High
2.3
60
20
OPERATIONAL AMPLIFIERS
Input Characteristics
Offset Voltage, VOS
5
15
µV
Temperature Drift
Input Bias Current
TA = −55°C to +125°C
TA = −55°C to +125°C
TA = −55°C to +125°C
0.01
250
0.06
500
5
100
0.5
2.95
µV/°C
pA
nA
pA
nA
Input Offset Current
20
Input Voltage Range
Open-Loop Gain
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Voltage Noise Density
Voltage Noise
0.05
100
100
100
V
120
120
110
27
V/mV
dB
dB
nV/√Hz
µV p-p
f = 0.1 Hz to 10 Hz
0.6
Dynamic Performance
Gain Bandwidth Product
Slew Rate
1
0.5
MHz
V/µs
Output Characteristics
Output Voltage High
RL = 100 kΩ to ground
RL = 10 kΩ to ground
RL = 100 kΩ to 3 V
RL = 10 kΩ to 3 V
2.9
2.8
2.96
2.82
60
80
40
V
V
mV
mV
mA
Output Voltage Low
100
200
Short-Circuit Current
BOTH AMPLIFIERS
Power Supply
Quiescent Current
Quiescent Current (Shutdown)
3.5
0.01
4.5
1
mA
µA
Rev. A | Page 6 of 20
Data Sheet
AD8231-EP
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 4.
Parameter
Rating
Table 5.
Thermal Pad
Supply Voltage
6 V
Indefinite1
−VS − 0.3 V to +VS + 0.3 V
−VS − 0.3 V to +VS + 0.3 V
–65°C to +150°C
–55°C to +125°C
θJA
54
96
Unit
°C/W
°C/W
Output Short-Circuit Current
Input Voltage (Common-Mode)
Differential Input Voltage
Storage Temperature Range
Operational Temperature Range
Soldered to Board
Not Soldered to Board
The θJA values in Table 5 assume a 4-layer JEDEC standard
board. If the thermal pad is soldered to the board, it is
also assumed it is connected to a plane. θJC at the exposed pad
is 6.3°C /W.
Package Glass Transition Temperature 130°C
ESD (Human Body Model)
ESD (Charged Device Model)
ESD (Machine Model)
1.5 kV
1.5 kV
0.2 kV
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8231-EP is
limited by the associated rise in junction temperature (TJ) on
the die. At approximately 130°C, which is the glass transition
temperature, the plastic changes its properties. Even
temporarily exceeding this temperature limit may change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of the amplifiers. Exceeding a
temperature of 130°C for an extended period can result in a loss
of functionality.
1 For junction temperatures between 105°C and 130°C, short-circuit operation
beyond 1000 hours can impact part reliability.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. A | Page 7 of 20
AD8231-EP
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
NC 1
–INA (IN-AMP –IN) 2
+INA (IN-AMP +IN) 3
NC 4
12 +V
S
–V
11
10
9
S
AD8231-EP
TOP VIEW
(Not to Scale)
OUTA (IN-AMP OUT)
REF
NOTES
1. NC = NO CONNECT. DO NOT CONNECT TO THIS PIN.
2. THE EXPOSED PAD CAN BE CONNECTED TO THE
NEGATIVE SUPPLY (–V ) OR LEFT FLOATING.
S
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin Number
Mnemonic
Description
1
2
3
4
5
6
7
8
9
NC
No Connect. Do not connect to this pin.
Instrumentation Amplifier Negative Input.
Instrumentation Amplifier Positive Input.
No Connect. Do not connect to this pin.
Shutdown.
−INA (IN-AMP −IN)
+INA (IN-AMP +IN)
NC
SDN
+INB
−INB
Operational Amplifier Positive Input.
Operational Amplifier Negative Input.
Operational Amplifier Output.
Instrumentation Amplifier Reference Pin. It should be driven with a low impedance. Output is
referred to this pin.
OUTB (OP AMP OUT)
REF
10
11
12
13
14
15
16
OUTA (IN-AMP OUT)
Instrumentation Amplifier Output.
Negative Power Supply. Connect to ground in single-supply applications.
Positive Power Supply.
Chip Select. Enables digital logic interface.
Gain Setting Bit (LSB).
Gain Setting Bit.
−VS
+VS
CS
A0
A1
A2
Gain Setting Bit (MSB).
EPAD
Exposed Pad. Can be connected to the negative supply (−VS) or left floating.
Rev. A | Page 8 of 20
Data Sheet
AD8231-EP
TYPICAL PERFORMANCE CHARACTERISTICS
INSTRUMENTATION AMPLIFIER PERFORMANCE CURVES
1000
1400
1200
1000
800
600
400
200
0
N: 5956
MEAN: 0.977167
SD: 11.8177
N: 5956
MEAN: –48.0779
SD: 21.0433
800
600
400
200
0
–100 –80 –60 –40 –20
0
20
40
60
80
100
–500 –400 –300 –200 –100
0
100 200 300 400 500
CMRR (µV/V)
GAIN ERROR (µV/V)
Figure 3. Instrumentation Amplifier CMR Distribution, G = 1
Figure 6. Instrumentation Amplifier Gain Distribution, G = 1
800
1400
N: 5956
MEAN: 2.06788
SD: 1.07546
700
600
500
400
300
200
100
0
1200
1000
800
600
400
200
0
–15
–10
–5
0
5
10
15
–55 –45 –35 –25 –15 –5
5
15 25 35 45 55 65 75
V
(µV)
TEMPERATURE (°C)
OSI
Figure 7. Instrumentation Amplifier Input Offset Voltage Drift,
−55°C to +125°C
Figure 4. Instrumentation Amplifier Input Offset Voltage Distribution
20
15
10
5
800
N: 5956
MEAN: 10.3901
SD: 3.9553
700
600
500
400
300
200
100
0
0
–5
–10
–30
–20
–10
0
10
20
30
–55 –45 –35 –25 –15 –5
5
15 25 35 45 55 65 75
V
(µV)
TEMPERATURE (°C)
OSO
Figure 8. Instrumentation Amplifier Output Offset Drift, −55°C to +125°C
Figure 5. Instrumentation Amplifier Output Offset Voltage Distribution
Rev. A | Page 9 of 20
AD8231-EP
Data Sheet
2000
6
5
4
3
2
1
0
V
V
= MIDSUPPLY
= MIDSUPPLY
REF
CM
0V, 4.96V
1500
1000
500
0
5V SINGLE SUPPLY
4.92V, 2.5V
0V, 2.96V
3V SINGLE SUPPLY
3V
5V
2.92V, 1.5V
4
0V, 0.04V
–500
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
0
1
2
3
5
6
TEMPERATURE (°C)
OUTPUT VOLTAGE (V)
Figure 9. Instrumentation Amplifier Bias Current vs. Temperature
Figure 12. Instrumentation Amplifier Input Common-Mode Range vs.
Output Voltage, VREF = 0 V
2.0
1.5
1.0
0.5
0
6
1.5V, 4.96V
5
0.02V, 4.22V
4
5V SINGLE SUPPLY
1.5V, 2.96V
4.98V, 3.22V
4.98V, 1.78V
3
2
1
0
–0.5
–1.0
0.02V, 2.22V
0.02V, 0.78V
2.98V, 2.22V
3V SINGLE SUPPLY
2.98V, 0.78V
1.5V, 0.04V
+V = +2.5V
S
–1.5
–2.0
–V = –2.5V
S
V
= 0V
REF
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
–2.5 –2.0 –1.5 –1.0 –0.5
0
0.5
1.0
1.5
2.0
2.5
OUTPUT VOLTAGE (V)
V
(V)
CM
Figure 13. Instrumentation Amplifier Input Common-Mode Range vs.
Output Voltage, VREF = 1.5 V
Figure 10. Instrumentation Amplifier Bias Current vs.
Common-Mode Voltage, 5 V
6
1.0
0.8
2.5V, 4.96V
5
0.6
5V SINGLE SUPPLY
4
0.4
4.98V, 3.72V
0.02V, 3.72V
0.2
3
2
1
0
0
2.98V, 2.72V
2.5V, 2.96V
–0.2
–0.4
–0.6
–0.8
–1.0
0.02V, 1.72V
0.02V, 1.28V
3V SINGLE
SUPPLY
4.98V,1.28V
+V = +1.5V
S
–V = –1.5V
2.5V, 0.04V
S
V
= 0V
2.98V, 0.28V
3.0 3.5 4.0
OUTPUT VOLTAGE (V)
REF
0
0.5
1.0
1.5
2.0
2.5
4.5
5.0
–1.5 –1.2 –0.9 –0.6 –0.3
0
0.3
0.6
0.9
1.2
1.5
V
(V)
CM
Figure 11. Instrumentation Amplifier Bias Current vs.
Common-Mode Voltage, 3 V
Figure 14. Instrumentation Amplifier Input Common-Mode Range vs.
Output Voltage, VREF = 2.5 V
Rev. A | Page 10 of 20
Data Sheet
AD8231-EP
20
15
50
G = 128
40
G = 64
G = 32
G = 16
G = 8
G = 4
G = 2
G = 1
G = 1
10
30
5
G = 8
20
G = 128
0
10
–5
0
–10
–15
–20
–25
–30
–10
–20
–30
–40
100
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
1k
10k
100k
1M
10M
TEMPERATURE (°C)
FREQUENCY (Hz)
Figure 18. Instrumentation Amplifier CMRR vs. Temperature
Figure 15. Instrumentation Amplifier Gain vs. Frequency
140
1000
G = 1
G = 8
800
900
120
100
80
60
40
20
0
600
G = 128
200
0
G = 1
–200
–400
–600
–800
–1000
G = 128
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
1
10
100
1k
10k
100k
TEMPERATURE (°C)
FREQUENCY (Hz)
Figure 16. Instrumentation Amplifier Gain Drift vs. Temperature
Figure 19. Instrumentation Amplifier Positive PSRR vs. Frequency
140
140
G = 128
G = 1
G = 8
120
120
100
G = 8
100
80
G = 128
G = 1
60
40
20
0
80
60
40
10
100
1k
10k
100k
1
10
100
1k
100k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 17. Instrumentation Amplifier CMRR vs. Frequency
Figure 20. Instrumentation Amplifier Negative PSRR vs. Frequency
Rev. A | Page 11 of 20
AD8231-EP
Data Sheet
100
10
G = +128, 0.4µV/DIV
G = +1, 1µV/DIV
1
0.1
0.01
1s/DIV
1
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 21. Instrumentation Amplifier 0.1 Hz to 10 Hz Noise
Figure 24. Instrumentation Amplifier Current Noise Spectral Density
100
G = +1
G = +8
G = +128
90
80
70
60
50
40
30
20
10
0
20mV/DIV
5µs/DIV
1
10
100
FREQUENCY (Hz)
1k
Figure 25. Instrumentation Amplifier Small Signal Pulse Response, G = 1,
RL = 2 kΩ, CL = 500 pF
Figure 22. Instrumentation Amplifier Voltage Noise Spectral Density vs.
Frequency, 5 V, 1 Hz to 1000 Hz
1000
G = +1
G = +8
G = +128
500pF
800pF
300pF
NO
LOAD
900
800
700
600
500
400
300
200
100
0
20mV/DIV
4µs/DIV
1
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 26. Instrumentation Amplifier Small Signal Pulse Response for Various
Capacitive Loads, G = 1
Figure 23. Instrumentation Amplifier Voltage Noise Spectral Density vs.
Frequency, 5 V, 1 Hz to 1 MHz
Rev. A | Page 12 of 20
Data Sheet
AD8231-EP
G = +8
G = +32
G = +128
2V/DIV
17.6µs TO 0.01%
21.4µs TO 0.001%
0.001%/DIV
100µs/DIV
20mV/DIV
10µs/DIV
Figure 27. Instrumentation Amplifier Small Signal Pulse Response, G = 4, 16,
and 128, RL = 2 kΩ, CL = 500 pF
Figure 30. Instrumentation Amplifier Large Signal Pulse Response,
G = 128, VS = 5 V
25
20
0.001%
2V/DIV
15
0.01%
3.95µs TO 0.01%
4µs TO 0.001%
10
5
0.001%/DIV
10µs/DIV
0
1
10
100
1k
GAIN (V/V)
Figure 28. Instrumentation Amplifier Large Signal Pulse Response,
G = 1, VS = 5 V
Figure 31. Instrumentation Amplifier Settling Time vs.
Gain for a 4 V p-p Step, VS = 5 V
25
20
15
10
5
0.001%
2V/DIV
0.01%
3.75µs TO 0.01%
3.8µs TO 0.001%
0.001%/DIV
10µs/DIV
0
1
10
100
1k
GAIN (V/V)
Figure 29. Instrumentation Amplifier Large Signal Pulse Response,
G = 8, VS = 5 V
Figure 32. Instrumentation Amplifier Settling Time vs.
Gain for a 2 V p-p Step, VS = 3 V
Rev. A | Page 13 of 20
AD8231-EP
Data Sheet
+V
+V
S
S
–0.2
–0.4
–0.6
–0.8
–1.0
+1.0
+0.8
+0.6
+0.4
+0.2
–0.2
–0.4
–0.6
–0.8
–1.0
+1.0
+0.8
+0.6
+0.4
+0.2
+25°C
–55°C
+25°C
–55°C
–V
–V
S
S
0.1
1
10
100
0.1
1
10
100
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 33. Instrumentation Amplifier Output Voltage Swing vs.
Output Current, VS = 3 V
Figure 34. Instrumentation Amplifier Output Voltage Swing vs.
Output Current, VS = 5 V
Rev. A | Page 14 of 20
Data Sheet
AD8231-EP
OPERATIONAL AMPLIFIER PERFORMANCE CURVES
100
80
60
40
20
0
–90
NO
LOAD
–100
–110
–120
–130
–140
–150
300pF
76° PHASE
MARGIN
800pF
1nF
1.5nF
R
C
= 10kΩ
= 200pF
L
L
20mV/DIV
5µs/DIV
–20
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 38. Operational Amplifier Small Signal Response for
Various Capacitive Loads, VS = 3 V
Figure 35. Operational Amplifier Open-Loop Gain and Phase vs.
Frequency, VS = 5 V
100
–90
NO
LOAD
80
60
40
20
0
–100
–110
–120
–130
–140
–150
1nF║2kΩ
1.5nF║2kΩ
72° PHASE
MARGIN
R
C
= 10kΩ
= 200pF
L
L
–20
10
100
1k
10k
100k
1M
10M
TIME (5µs/DIV)
FREQUENCY (Hz)
Figure 39. Operational Amplifier Large Signal Transient Response, VS = 5 V
Figure 36. Operational Amplifier Open-Loop Gain and Phase vs.
Frequency, VS = 3 V
NO
LOAD
1nF
2nF
800pF
NO
LOAD
1nF║2kΩ
1.5nF║2kΩ
1.5nF
20mV/DIV
5µs/DIV
TIME (5µs/DIV)
Figure 40. Operational Amplifier Large Signal Transient Response, VS = 3 V
Figure 37. Operational Amplifier Small Signal Response for
Various Capacitive Loads, VS = 5 V
Rev. A | Page 15 of 20
AD8231-EP
Data Sheet
1000
900
800
700
600
500
400
300
200
100
+V
S
–0.2
–0.4
–0.6
–0.8
–1.0
+1.0
+0.8
+0.6
+0.4
+0.2
+25°C
–55°C
0
1
–V
S
0.1
10
100
1k
10k
100k
1
10
100
OUTPUT CURRENT (mA)
FREQUENCY (Hz)
Figure 44. Operational Amplifier Output Voltage Swing vs.
Output Current, VS = 3 V
Figure 41. Operational Amplifier Voltage Spectral Noise Density vs. Frequency
+V
S
–0.2
–0.4
–0.6
–0.8
–1.0
+1.0
+0.8
+0.6
+0.4
+0.2
3.5
V
V
= ±2.5V
= ±1.5V
S
S
3.0
2.5
2.0
1.5
1.0
0.5
0
+25°C
–55°C
–V
S
0.1
–0.5
1
10
100
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
OUTPUT CURRENT (mA)
TEMPERATURE (°C)
Figure 45. Operational Amplifier Output Voltage Swing vs.
Output Current, VS = 5 V
Figure 42. Operational Amplifier Bias Current vs. Temperature
140
400
300
200
100
+PSRR
120
100
80
60
40
20
0
V
= ±2.5V
S
–PSRR
0
–100
–200
–300
–400
V
= ±1.5V
S
–3
–2
–1
0
1
2
3
1
10
100
1k
10k
100k
V
(V)
CM
FREQUENCY (Hz)
Figure 46. Operational Amplifier Power Supply Rejection Ratio
Figure 43. Operational Amplifier Bias Current vs. Common Mode
Rev. A | Page 16 of 20
Data Sheet
AD8231-EP
PERFORMANCE CURVES VALID FOR BOTH AMPLIFIERS
7
160
140
120
100
80
G = 8
G = 128
6
5
G = 1
4
+25°C
3
–55°C
60
2
1
0
40
20
SOURCE CHANNEL: OP AMP AT G = 1
0
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
5.9
10
100
1k
FREQUENCY (Hz)
10k
100k
SUPPLY VOLTAGE (V)
Figure 48. Channel Separation vs. Frequency
Figure 47. Supply Current vs. Supply Voltage
Rev. A | Page 17 of 20
AD8231-EP
Data Sheet
OUTLINE DIMENSIONS
DETAIL A
(JEDEC 95)
4.10
4.00 SQ
3.90
0.35
0.30
0.25
PIN 1
INDICATOR
PIN 1
INDIC ATOR AREA OPTIONS
(SEE DETAIL A)
13
16
0.65
BSC
12
1
2.70
2.60 SQ
2.50
EXPOSED
PAD
4
9
5
8
0.45
0.40
0.35
0.20 MIN
BOTTOM VIEW
TOP VIEW
SIDE VIEW
0.80
0.75
0.70
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
0.05 MAX
0.02 NOM
COPLANARITY
0.08
SECTION OF THIS DATA SHEET.
SEATING
PLANE
0.20 REF
COMPLIANT TO JEDEC STANDARDS MO-220-WGGC.
Figure 49. 16-Lead Lead Frame Chip Scale Package [LFCSP]
4 mm × 4 mm Body and 0.75 mm Package Height
(CP-16-17)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
AD8231TCPZ-EP-R7
Temperature Range
Package Description
Package Option
CP-16-17
−55°C to +125°C
16-Lead LFCSP, 7”Tape and Reel
1 Z = RoHS Compliant Part.
Rev. A | Page 18 of 20
Data Sheet
NOTES
AD8231-EP
Rev. A | Page 19 of 20
AD8231-EP
NOTES
Data Sheet
©2011–2017 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09707-0-11/17(A)
Rev. A | Page 20 of 20
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