AD8280 [ADI]
Lithium Ion Battery Safety Monitor; 锂离子电池安全监控器
| 型号： | AD8280 |
| 厂家： | 
ADI |
| 描述： | Lithium Ion Battery Safety Monitor |
| 文件： | 总24页 (文件大小：649K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Lithium Ion Battery Safety Monitor
AD8280
FEATURES
GENERAL DESCRIPTION
Wide supply voltage range: 6.0 V to 30.0 V
Multiple inputs can monitor 3 to 6 cell voltages
and 2 temperatures
Adjustable threshold levels: overvoltage, undervoltage,
overtemperature
Alarm options: separate or shared alarms
Extended temperature range performance
−40°C ≤ TA ≤ +105°C
Can be daisy-chained
Internal reference
Powered from battery stack
LDO available to power isolator
Qualified for automotive applications
Extensive self-test feature aids in meeting ASIL/SIL
requirements
The AD8280 is a hardware-only safety monitor for lithium ion
battery stacks. The part has inputs to monitor six battery cells
and two temperature sensors (either NTC or PTC thermistors).
The part is designed to be daisy-chained with other AD8280
devices to monitor a stack of significantly more than six cells
without the need for numerous isolators. Its output can be con-
figured for an independent or shared alarm state.
The AD8280 functions independently from a primary monitor
and contains its own reference and LDO, both of which are
powered completely from the battery cell stack. The reference, in
conjunction with external resistor dividers, is used to establish
trip points for the overvoltages and undervoltages. Each cell
channel contains programmable deglitching circuitry to prevent
alarms from transient input levels.
The AD8280 also has two digital pins that can be used to select
various combinations of inputs in the case where fewer than six
cells are to be monitored. Most important, it has a self-test feature,
making it suitable for high reliability applications, such as auto-
motive hybrid electric vehicles or higher voltage industrial usage,
such as uninterruptible power supplies. The AD8280 can function
over a temperature range of −40°C to +105°C.
APPLICATIONS
Lithium ion battery backup monitor and threshold detection
Electric and hybrid electric vehicle
Industrial vehicle
Uninterruptible power supply
Wind and solar
FUNCTIONAL BLOCK DIAGRAM
OT
AIINOV AIINUV AIINOT ENBO
TESTO
VTOP LDO
LDOS REF FB
UV
OV
DGT0
DGT1
DGT2
GND2
GND1
VCC
VTOPS
LEVEL
SHIFTER
VBOT2
VBOT2S
VBOT1
LDO
REF
VBOT1S
SELF-
TEST
GENERATOR
DE-
C6O
C6U
I/V
GLITCHING
VIN6
VIN5
CONVERTER
LEVEL
SHIFTER
VCCS
DE-
GLITCHING
TOP
BOT
VIN4
VIN3
VIN2
SEL0
SEL 1
ALARM
LOGIC
VIN1
VIN0
DE-
C1O
GLITCHING
LEVEL
SHIFTER
AVOUTOV
DE-
GLITCHING
C1U
CT1
CT2
AVOUTUV
AVOUTOT
VT1
VT2
DE-
GLITCHING
V/I
CONVERTER
NPTC
DE-
GLITCHING
ALRMSEL
AD8280
OT
AIOUTOV
AIOUTUV AIOUTOT
ENBI TESTI
OT
Figure 1.
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 © 2010-2011 Analog Devices, Inc. All rights reserved.
AD8280
TABLE OF CONTENTS
Features .............................................................................................. 1
Number of Cells Selection......................................................... 17
Threshold Inputs ........................................................................ 17
Top and Bottom Part Designation ........................................... 18
Typical Daisy-Chain Connections........................................... 18
Shared or Separate Alarms........................................................ 18
Deglitching Options................................................................... 18
Enabling and Disabling the AD8280....................................... 20
Alarm Output ............................................................................. 20
Self-Test ....................................................................................... 20
Protection Components and Pull-Up/ Pull-Down Resistors23
EMI Considerations................................................................... 23
System Accuracy Calculation ................................................... 23
Outline Dimensions....................................................................... 24
Ordering Guide .......................................................................... 24
Automotive Products................................................................. 24
Applications....................................................................................... 1
General Description......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
Typical Performance Characteristics ............................................. 8
Theory of Operation ...................................................................... 15
Applications Information .............................................................. 16
Typical Connections .................................................................. 16
Cell Inputs ................................................................................... 16
Temperature Inputs and Thermistor Selection ...................... 16
REVISION HISTORY
7/11—Rev B to Rev. C
7/10—Rev. 0 to Rev. A
Changes to Self-Test Completion Time, tST Parameter and Self-
Test Valid Time, tSTV Parameter in Table 1 .................................... 3
Change to Logic 1 Voltage Input, VIH Parameter in Table 1........3
Changes to Temperature Inputs and Thermistor Selection
Section.............................................................................................. 17
Added Figure 46; Renumbered Figures Sequentially ................ 17
Changes to Endnote 1 in Table 6.................................................. 18
Changes to Ordering Guide.......................................................... 24
6/11—Rev. A to Rev. B
Changes to Table 1, Dynamic Performance, Self-Test
Valid Time, tstv Parameter ................................................................ 4
Change to Figure 36, Figure 37, and Figure 39........................... 13
4/10—Revision 0: Initial Version
Rev. C | Page 2 of 24
AD8280
SPECIFICATIONS
VTOP = 7.5 V to 30 V, TA = −40°C to +105°C, unless otherwise noted.
Table 1.
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
TRIP POINT ERRORS
Undervoltage Trip Point Error
Overvoltage Trip Point Error
Overtemperature Trip Point Error
Hysteresis for Overvoltage, Undervoltage,
and Overtemperature Trip Points
−25
−15
−25
40
+25
+15
+25
60
mV
mV
mV
mV
50
CELL INPUTS (VIN0 TO VIN6)
Input Bias Current
Input Offset Current
Input Voltage Range
Input Common-Mode Range
0
0
0
0
20
20
5
Top of
stack
nA
nA
V
One cell
V
TEMPERATURE INPUTS (VT1, VT2)
Input Bias Current
Input Voltage Range
−10
0
+10
5
nA
V
OVERVOLTAGE THRESHOLD INPUT (OV)
Input Bias Current
Input Voltage Range
0
3.6
20
4.6
nA
V
UNDERVOLTAGE THRESHOLD INPUT (UV)
Input Bias Current
Input Voltage Range
0
1.4
20
3.3
nA
V
OVERTEMPERATURE THRESHOLD INPUT (OT)
Input Bias Current
Input Voltage Range
0
1.5
20
4
nA
V
INPUT/OUTPUT CHARACTERISTICS
Logic 1 Current
Logic 0 Current
AIINxx, AIOUTxx
AIINxx, AIOUTxx
100
10
150
30
200
50
μA
μA
Logic 1 Voltage Input, VIH
All Pins Except TOP and BOT
TOP and BOT Pins
With respect to VBOTx
2.0
VTOP
LDO
V
V
Logic 0 Voltage Input, VIL
All Pins Except TOP and BOT
TOP and BOT Pins
With respect to VBOTx
0.8
VBOT
V
V
Logic 1 Voltage Output, VOH
Logic 0 Voltage Output, VOL
Input Bias Current
With respect to VBOTx
With respect to VBOTx
SEL0, SEL1, DGT0, DGT1, DGT2, NPTC, ALRMSEL
4.2
V
V
μA
0.2
1
REFERENCE AND LDO
Reference Voltage
Reference Source Current
LDO Voltage
4.95
4.85
5.0
5.1
5.05
250
5.35
5.0
V
μA
V
0 mA ≤ LDO source current ≤ 10.0 mA
LDO Source Current
mA
DYNAMIC PERFORMANCE
Fault Detection (Deglitch) Time Range
Seven settings: 0.0 sec, 0.1 sec, 0.8 sec, 1.6 sec, 0.0
3.2 sec, 6.4 sec, and 12.8 sec
12.8
+20
sec
Fault Detection (Deglitch) Accuracy
Propagation Delay Time
Start-Up Time
−20
%
μs
ms
No capacitor on daisy chain
From application enabled to LDO = 90% of
value
4.0
3.0
Rev. C | Page 3 of 24
AD8280
Parameter
Test Conditions/Comments
Deglitch time = 0.0 sec
Deglitch time > 0.0 sec
Min
40
800
0.0
10
Typ
Max
50
1000
3.5
100
5.0
1.0
Unit
ms
ms
μs
ns
μs
Self-Test Completion Time, tST
Self-Test Valid Time, tSTV
Delay Time for Self-Test Start, tRE
Delay Time for Data Valid, tFE
Rise Time for Self-Test Pulse, tR
POWER SUPPLY
4.0
TESTI
ms
Supply Voltage Range
VTOP with respect to VBOTx
LDO source current = 10.0 mA
LDO source current = 0.0 mA
7.5
6.0
30
30
V
V
Quiescent Current
Power Supply Enabled
Power Supply Disabled
Excluding LDO source current
2.0
1.0
mA
μA
Rev. C | Page 4 of 24
AD8280
ABSOLUTE MAXIMUM RATINGS
Table 2.
THERMAL RESISTANCE
Parameter
Rating
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
VTOP to VBOTx
−0.3 V to +33 V
VIN0 to VBOTx
VIN1 Through VIN6 Voltage to VBOTx
VTx to VBOTx
TESTI, ENBI to GNDx
DGTx, SELx, NPTC to GNDx
AVOUTxx to GNDx
TOP, BOT to VBOTx
−0.3 V to LDO + 0.3 V
−0.3 V to VTOP + 0.3 V
−0.3 V to LDO + 0.3 V
−0.3 V to LDO + 0.3 V
−0.3 V to LDO + 0.3 V
−0.3 V to LDO + 0.3 V
−0.3 V to VTOP + 0.3 V
Table 3. Thermal Resistance
Package Type
θJA
θJC
Unit
48-Lead LQFP (ST-48)
54
15
°C/W
ESD CAUTION
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. C | Page 5 of 24
AD8280
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
48
47
46
45
44
43
42
41
40
39
38
37
1
2
36
35
34
33
32
31
30
29
28
27
26
25
VBOT2
VBOT2S
VBOT1S
VBOT1
VIN0
VCC
PIN 1
GND1
3
GND2
4
NPTC
5
ALRMSEL
DGT0
6
VIN1
AD8280
7
VIN2
DGT1
8
VIN3
SEL0
9
VIN4
SEL1
10
11
12
VIN5
AVOUTOV
AVOUTUV
AVOUTOT
VIN6
VTOP
13
14
15
16
17
18
19
20
21
22
23
24
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No.
Mnemonic
VBOT2
VBOT2S
VBOT1S
VBOT1
VIN0
VIN1
VIN2
VIN3
VIN4
VIN5
VIN6
VTOP
VTOPS
VT1
VT2
TESTI
AIOUTOV
AIOUTUV
AIOUTOT
ENBI
Description
1
2
3
4
5
6
7
8
Lowest Potential of Six-Cell Stack.
Lowest Potential of Six-Cell Stack. Tie to VBOT2.
Lowest Potential of Six-Cell Stack. Tie to VBOT1.
Lowest Potential of Six-Cell Stack.
Input Voltage for Bottom of Cell 1.
Input Voltage for Bottom of Cell 2/Top of Cell 1.
Input Voltage for Bottom of Cell 3/Top of Cell 2.
Input Voltage for Bottom of Cell 4/Top of Cell 3.
Input Voltage for Bottom of Cell 5/Top of Cell 4.
Input Voltage for Bottom of Cell 6/Top of Cell 5.
Input Voltage for Top of Cell 6.
Highest Potential of Six-Cell Stack.
Highest Potential of Six-Cell Stack. Tie to VTOP.
Temperature Input 1.
Temperature Input 2.
Test Input.
Alarm Current Output, Overvoltage. Used in daisy-chain configuration.
Alarm Current Output, Undervoltage. Used in daisy-chain configuration.
Alarm Current Output, Overtemperature. Used in daisy-chain configuration.
Enable Input. When ENBI is logic high, the part is enabled; when ENBI is logic low, the part is disabled.
Overvoltage Trip Point.
Undervoltage Trip Point.
Overtemperature Trip Point.
Digital Select Pin 2. Used with DGT0 and DGT1 to select deglitch time (see Table 7).
Alarm Voltage Output, Overtemperature.
Alarm Voltage Output, Undervoltage.
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
OV
UV
OT
DGT2
AVOUTOT
AVOUTUV
AVOUTOV
Alarm Voltage Output, Overvoltage.
Rev. C | Page 6 of 24
AD8280
Pin No.
28
29
30
31
Mnemonic
SEL1
SEL0
DGT1
DGT0
Description
Digital Select Pin 1. Used with SEL0 to select channels to be used (see Table 5).
Digital Select Pin 0. Used with SEL1 to select channels to be used (see Table 5).
Digital Select Pin 1. Used with DGT0 and DGT2 to select deglitch time (see Table 7).
Digital Select Pin 0. Used with DGT1 and DGT2 to select deglitch time (see Table 7).
32
ALRMSEL
Selects three separate alarms or one shared alarm. When ALRMSEL is logic high, three separate alarms are
selected; when ALRMSEL is logic low, one shared alarm is selected.
33
NPTC
Selects NTC or PTC thermistor for VTx inputs. When NPTC is tied to logic high (LDO pin), a PTC thermistor is
selected; when NPTC is tied to logic low (VBOTx pin), an NTC thermistor is selected.
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
GND2
GND1
VCC
VCCS
LDO
LDOS
FB
REF
ENBO
AIINOT
AIINUV
AIINOV
TESTO
BOT
Ground. Tie to same potential as VBOT1 and VBOT2.
Ground. Tie to same potential as VBOT1 and VBOT2.
Supply Voltage. Tie to LDO.
Supply Voltage Sense. Tie to LDO.
LDO Output. Tie to VCC, VCCS, and LDOS.
LDO Output Sense. Tie to LDO.
Feedback Pin. Tie to REF.
Reference Output. Tie to FB.
Enable Output.
Alarm Current Input, Overtemperature. Used in daisy-chain configuration.
Alarm Current Input, Undervoltage. Used in daisy-chain configuration.
Alarm Current Input, Overvoltage. Used in daisy-chain configuration.
Test Output.
Used to identify part at lowest potential in daisy chain (see Table 6).
Used to identify part at highest potential in daisy chain (see Table 6).
TOP
Rev. C | Page 7 of 24
AD8280
TYPICAL PERFORMANCE CHARACTERISTICS
SAMPLE SIZE = 2726
1800
SAMPLE SIZE = 2726
1400
1200
1000
800
600
400
200
0
UNDERVOLTAGE
OVERVOLTAGE
1500
UNDERVOLTAGE
OVERVOLTAGE
1200
900
600
300
0
–30
–20
–10
0
10
20
30
30
30
–30
–20
–10
0
10
20
30
30
30
TRIP POINT ERROR (mV)
TRIP POINT ERROR (mV)
Figure 3. Overvoltage and Undervoltage Trip Point Error,
Voltage Between VIN0 and VIN1
Figure 6. Overvoltage and Undervoltage Trip Point Error,
Voltage Between VIN3 and VIN4
1600
SAMPLE SIZE = 2726
SAMPLE SIZE = 2726
2400
2100
1800
1500
1200
900
UNDERVOLTAGE
OVERVOLTAGE
UNDERVOLTAGE
OVERVOLTAGE
1400
1200
1000
800
600
400
200
0
600
300
0
–30
–30
–20
–10
0
10
20
–20
–10
0
10
20
TRIP POINT ERROR (mV)
TRIP POINT ERROR (mV)
Figure 4. Overvoltage and Undervoltage Trip Point Error,
Voltage Between VIN1 and VIN2
Figure 7. Overvoltage and Undervoltage Trip Point Error,
Voltage Between VIN4 and VIN5
1800
SAMPLE SIZE = 2726
SAMPLE SIZE = 2726
1800
UNDERVOLTAGE
OVERVOLTAGE
1500
1200
900
600
300
0
UNDERVOLTAGE
OVERVOLTAGE
1500
1200
900
600
300
0
–30
–20
–10
0
10
20
–30
–20
–10
0
10
20
TRIP POINT ERROR (mV)
TRIP POINT ERROR (mV)
Figure 5. Overvoltage and Undervoltage Trip Point Error,
Voltage Between VIN2 and VIN3
Figure 8. Overvoltage and Undervoltage Trip Point Error,
Voltage Between VIN5 and VIN6
Rev. C | Page 8 of 24
AD8280
SAMPLE SIZE = 2726
SAMPLE SIZE = 2726
250
200
150
100
50
180
150
120
90
60
30
0
0
4.8
–5
–4
–3
–2
–1
0
4.9
5.0
5.1
5.2
5.3
5.4
TRIP POINT ERROR (mV)
LDO VOLTAGE (V)
Figure 9. Overtemperature Trip Point Error
Figure 12. LDO Voltage
400
350
300
250
200
150
100
50
240
210
180
150
120
90
SAMPLE SIZE = 2726
SAMPLE SIZE = 2726
60
30
0
1.2
0
1.3
1.4
1.5
1.6
1.7
1.8
1.9
47
48
49
50
51
SUPPLY CURRENT (mA)
HYSTERESIS (mV)
Figure 10. Overvoltage, Undervoltage, and Overtemperature Hysteresis
Figure 13. Supply Current
600
500
400
300
200
100
0
SAMPLE SIZE = 2726
500
SAMPLE SIZE = 2726
400
300
200
100
0
4.94
4.96
4.98
5.00
5.02
5.04
5.06
–0.02
–0.01
0
0.01
0.02
0.03
0.04
0.05
REFERENCE VOLTAGE (V)
SHUTDOWN CURRENT (µA)
Figure 11. Reference Voltage
Figure 14. Supply Current, Power-Down Mode
Rev. C | Page 9 of 24
AD8280
75
70
65
60
55
50
45
40
35
30
25
25
20
15
10
5
VOLTAGE BETWEEN
VIN0 AND VIN1
VIN1 AND VIN2
VIN2 AND VIN3
VIN3 AND VIN4
VIN4 AND VIN5
VIN5 AND VIN6
VOLTAGE BETWEEN
VIN0 AND VIN1
VIN1 AND VIN2
VIN2 AND VIN3
VIN3 AND VIN4
VIN4 AND VIN5
VIN5 AND VIN6
0
VIN1 TO VIN2 AND VIN5 TO VIN6
–5
–10
–15
–20
–25
–50
–30
–50
–10
10
30
50
70
90
110
110
110
–30
–10
10
30
50
70
90
110
110
110
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 18. Overvoltage Hysteresis vs. Temperature
Figure 15. Overvoltage Error vs. Temperature
25
20
75
70
65
60
55
50
45
40
35
30
25
VOLTAGE BETWEEN
VIN0 AND VIN1
VIN1 AND VIN2
VIN2 AND VIN3
VIN3 AND VIN4
VIN4 AND VIN5
VIN5 AND VIN6
VOLTAGE BETWEEN
VIN0 AND VIN1
VIN1 AND VIN2
VIN2 AND VIN3
VIN3 AND VIN4
VIN4 AND VIN5
VIN5 AND VIN6
15
10
5
0
–5
–10
–15
–20
VIN2 TO VIN3 AND VIN3 TO VIN4
–25
–50
–50
–30
–10
10
30
50
70
90
–30
–10
10
30
50
70
90
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 16. Undervoltage Error vs. Temperature
Figure 19. Undervoltage Hysteresis vs. Temperature
75
70
65
60
55
50
45
40
35
30
25
10
8
6
4
VT1
VT2
2
0
–2
–4
–6
–8
VT2
VT1
–10
–50
–50
–30
–10
10
30
50
70
90
–30
–10
10
30
50
70
90
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 17. Overtemperature Error vs. Temperature
Figure 20. Overtemperature Hysteresis vs. Temperature
Rev. C | Page 10 of 24
AD8280
2.5
2.0
1.5
1.0
0.5
0
2.5
2.0
1.5
1.0
0.5
15
10
5
VOLTAGE BETWEEN
VIN0 AND VIN1
VIN1 AND VIN2
VIN2 AND VIN3
VIN3 AND VIN4
VIN4 AND VIN5
VIN5 AND VIN6
ENABLED
DISABLED
0
–5
–10
–15
0
6
10
14
18
22
26
30
6
10
14
18
22
26
30
STACK VOLTAGE (V)
STACK VOLTAGE (V)
Figure 24. Supply Current vs. Stack Voltage (VIN6 – VIN0)
Figure 21. Overvoltage Trip Point Error vs. Stack Voltage (VIN6 – VIN0)
5
1.40
1.35
1.30
1.25
1.20
1.15
0
VOLTAGE BETWEEN
–5
–10
–15
–20
–25
VIN0 AND VIN1
VIN1 AND VIN2
VIN2 AND VIN3
VIN3 AND VIN4
VIN4 AND VIN5
VIN5 AND VIN6
STACK VOLTAGE = 7.5V
STACK VOLTAGE = 18V
STACK VOLTAGE = 29.8V
–50
–30
–10
10
30
50
70
90
110
6
10
14
18
22
26
30
TEMPERATURE (°C)
STACK VOLTAGE (V)
Figure 25. Enabled Supply Current vs. Temperature
for Various Stack Voltages (VIN6 – VIN0)
Figure 22. Undervoltage Trip Point Error vs. Stack Voltage (VIN6 – VIN0)
10
8
5.5
5.0
4.5
4.0
3.5
3.0
2.5
LDO
REF
6
4
2
0
–2
6
10
14
18
22
26
30
0
5
10
15
20
25
30
STACK VOLTAGE (V)
SOURCE CURRENT (mA)
Figure 26. LDO and Reference Voltage vs. LDO Source Current,
Stack Voltage = 7.5 V
Figure 23. Input Bias Current vs. Stack Voltage (VIN6 – VIN0)
Rev. C | Page 11 of 24
AD8280
5.5
5.0
4.5
4.0
3.5
3.0
5.08
5.07
5.06
5.05
5.04
5.03
5.02
5.01
5.00
4.99
LDO
LDO
REF
REF
2.5
0
4.98
5
10
15
20
25
30
6
10
14
18
22
26
30
SOURCE CURRENT (mA)
STACK VOLTAGE (V)
Figure 27. LDO and Reference Voltage vs. LDO Source Current,
Stack Voltage = 18.0 V
Figure 30. LDO and Reference Voltage vs. Stack Voltage (VIN6 – VIN0)
10
35
VIN0
VIN2
VIN4
VIN6
VT1
UV
VIN1
VIN3
VIN5
VT2
OV
8
6
30
LDO
25
20
15
10
4
OT
2
0
–2
–4
–6
–8
–10
REF
5
0
–50
–30
–10
10
30
50
70
90
110
–50
–30
–10
10
30
50
70
90
110
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 28. LDO and Reference Source Current vs. Temperature
Figure 31. Input Bias Current vs. Temperature
5.11
5.09
LDO
5.07
5.05
5.03
5.01
OV
1
REF
4.99
4.97
4.95
–50
–30
–10
10
30
50
70
90
110
20ns/DIV
TEMPERATURE (°C)
Figure 29. LDO and Reference Voltage vs. Temperature
Figure 32. Alarm Rise Time
Rev. C | Page 12 of 24
AD8280
OV
1
2
3
OV
UV
OT
1
TESTI
4
CH1 5V
CH3 5V
CH2 5V
CH4 5V
M200ms 1.25ks/s
A CH4 2.4V
800µs/pt
20ns/DIV
Figure 33. Alarm Fall Time
Figure 36. TESTI and AVOUTxx, Deglitch Time = 0.1 sec, Self-Test Passes
OV
UV
OV
1
1
2
UV
2
OT
OT
3
3
TESTI
TESTI
4
4
20ms/DIV
CH1 5V
CH3 5V
CH2 5V
CH4 5V
M200ms 1.25ks/s
A CH4 2.4V
800µs/pt
Figure 34. TESTI and AVOUTxx, Deglitch Time = 0.0 sec, Self-Test Passes
Figure 37. TESTI and AVOUTxx, Deglitch Time = 0.1 sec, Self-Test Fails (UV)
OV
1
OV
1
UV
2
TESTI
2
OT
3
TESTI
4
20ms/DIV
4µs/DIV
Figure 35. TESTI and AVOUTxx, Deglitch Time = 0.0 sec, Self-Test Fails (UV)
Figure 38. TESTI Edge and AVOUTxx, Self-Test Fails (Enlarged)
Rev. C | Page 13 of 24
AD8280
OV
OV
1
1
UV
2
CELL
ALARM
TRIPPED
2
OT
3
TESTI
4
CH1 5V
CH3 5V
CH2 5V
CH4 5V
M400ms 625s/s
A CH4 2.4V
1.6ms/pt
200ms/DIV
Figure 42. Cell Voltage Change to Trip Alarm, Deglitch Time = 800 ms
Figure 39. Alarm Condition Entering Self-Test, Part Passes Self-Test
TESTI
4
OV
1
OV
1
ALARM
CELL
TRIPPED
2
UV
2
OT
3
1sec/DIV
4µs/DIV
Figure 43. Cell Voltage Change to Trip Alarm, Deglitch Time = 3.2 sec
Figure 40. Alarm Condition Entering Self-Test, Part Passes Self-Test
(Enlarged)
1
ENBI
OV
2
REF
3
TESTI
4
1ms/DIV
Figure 41. Start-Up Time
Rev. C | Page 14 of 24
AD8280
THEORY OF OPERATION
Figure 44 shows a block diagram of the AD8280. The AD8280
is a threshold monitor that can be used to monitor up to six cell
voltages and two temperature voltages. The part can also be used
in a daisy-chain configuration to monitor as many cells as required.
The benefit of the daisy-chain configuration is that isolation is
required to bring the alarm signal away from the high voltage
environment on only the bottom part of the chain, reducing
system cost and minimizing the board space required.
The part also contains its own LDO and reference. The LDO
can be used to drive external components such as thermistors
or isolators, whereas the reference can be used with the voltage
dividers to establish the trip points.
The AD8280 has the following unique features and capabilities:
•
•
Three, four, five, or six cells can be monitored.
Negative or positive temperature coefficient thermistors
can be used.
The cell and temperature voltage inputs are connected to the part
using the VIN0 through VIN6 inputs and the VT1 and VT2 inputs,
respectively. Because the six-cell stack voltage can be up to 30 V,
the input voltages are level-shifted and referenced to the lowest
potential (part ground or VBOTx) of the AD8280. These voltages
are then input into window comparators and compared to trip
points set by external resistor dividers.
•
•
•
Multiple parts can be configured in a daisy chain to monitor
hundreds of cells. Information about the status of the alarms
on the entire daisy chain, as well as input signals that enable
the part and initiate self-test, are all communicated via the
bottom, or master, part in the chain.
Alarm outputs for overvoltage, undervoltage, and overtemp-
erature status can be shared, with each output indicating
the same status for any of the occurring alarm conditions,
or the alarm outputs can function as separate entities with
each indicating the status of the specific condition.
An extensive self-test feature ensures that the internal
components are functioning correctly. The self-test is
initiated upon request to the TESTI pin.
If the cell or temperature voltage inputs exceed or fall below the
selected trip points, an alarm, in the form of a digital voltage level,
changes state at the voltage output (AVOUTxx) of the part. The
alarm state also exists in the form of a current output (AIOUTxx)
used to communicate to the other devices when multiple parts
are used in a daisy-chain configuration.
The part contains programmable deglitching circuitry to ensure
that transient voltages appearing at the cell inputs are ignored.
OT
AIINOV AIINUV AIINOT ENBO
TESTO
VTOP LDO
VTOPS
LDOS REF FB
UV
OV
DGT0
DGT1
DGT2
GND2
GND1
VCC
LEVEL
SHIFTER
VBOT2
VBOT2S
VBOT1
LDO
REF
VBOT1S
SELF-
TEST
GENERATOR
DE-
C6O
C6U
I/V
GLITCHING
VIN6
VIN5
CONVERTER
LEVEL
SHIFTER
VCCS
DE-
GLITCHING
TOP
BOT
VIN4
VIN3
VIN2
SEL0
SEL 1
ALARM
LOGIC
VIN1
VIN0
DE-
C1O
GLITCHING
LEVEL
SHIFTER
AVOUTOV
AVOUTUV
AVOUTOT
DE-
GLITCHING
C1U
CT1
CT2
VT1
VT2
DE-
GLITCHING
V/I
CONVERTER
NPTC
DE-
GLITCHING
ALRMSEL
AD8280
OT
AIOUTOV
AIOUTUV AIOUTOT
ENBI TESTI
OT
Figure 44. Functional Block Diagram
Rev. C | Page 15 of 24
AD8280
APPLICATIONS INFORMATION
TYPICAL CONNECTIONS
Figure 45 is a block diagram of the AD8280 typical connections.
TEMPERATURE INPUTS AND THERMISTOR
SELECTION
VT1 and VT2 are voltage inputs and are designed to work with
thermistors that are configured as resistor dividers, as shown
in Figure 45. The voltage at the top of the thermistor divider
should be the +5 V output of the LDO. The LDO pin can source
more current than the REF pin and is better suited to drive the
thermistor dividers.
CELL INPUTS
The battery stack of six cells should be connected to VIN0 through
VIN6, with the highest potential connected to VIN6 and the lowest
to VIN0. The connections should be made through a low-pass filter
consisting of a 10 kΩ resistor and a 10 nF capacitor, as shown in
Figure 45. The lowest potential of the six-cell stack should also be
connected to VBOT1, VBOT1S, VBOT2, and VBOT2S as well,
whereas the highest potential should be connected through a
diode to VTOP and VTOPS. It is recommended that decoupling
capacitors of 0.1 μF and 10 μF be used at the VTOP pin.
If a voltage source other than that of the AD8280 LDO is used
to drive the thermistor bridge (VTH), it is important that the
VT1 and VT2 voltages be brought to 0 V when the AD8280 is
disabled or powered down because the VT1 and VT2 inputs
must be at 0 V when the LDO is also at 0 V.
100nF
10µF 0.1µF
Z1
PART
GROUND
AIINOV AIINUV AIINOT
VTOP VTOPS
ENBO TESTO UV OV OT
UV
REF
OV
REF
OT
FB
REF
VCC
REF
VCCS
LDO
AVOUTOV
AVOUTUV
AVOUTOT
0.1µF
2.2µF
LDOS
10nF
10kΩ
VIN6
VIN5
VIN4
VIN3
VIN2
VIN1
VIN0
+
+
+
+
+
+
0.1µF
AD8280
TOP
BOT
ALRMSEL
DGT2
DGT1
VT1
VT2
DGT0
NPTC
VBOT2S
VBOT2
VBOT1S
VBOT1
SEL0
SEL1
AIOUTOV AIOUTUV AIOUTOT ENBI TESTI GND1 GND2
22pF
PART
GROUND
NOTES
1. PART IS CONFIGURED AS FOLLOWS:
MIDDLE PART IN DAISY CHAIN
ALARMS ARE SHARED
DEGLITCH TIME SET TO 0.0 SECONDS
NTC THERMISTOR INPUTS
6 CELL INPUTS
Figure 45. Typical Connections of the AD8280
Rev. C | Page 16 of 24
AD8280
Also, if the resistor (RTOP) used in the top of the thermistor
bridge circuit is less than 10 kΩ, another resistor (RIN) must be
added in series to the input to the VTx pin (see Figure 46). The
VIN6
VIN5
VIN4
+
+
+
+
two resistors together must be greater than 10 kΩ (RTOP + RIN
10 kΩ). This configuration is required only if VTH is not the
AD8280 LDO.
>
VIN3
VIN2
VIN1
V
TH
VIN0
R
TOP
R
IN
AD8280
VTx
THERMISTOR
Figure 48. Four-Cell Connections for the AD8280
AD8280
VIN6
VIN5
Figure 46. Input Configuration for VTx When Not Using the LDO for VTH
The part can work with both negative temperature coefficient
VIN4
VIN3
VIN2
(NTC) and positive temperature coefficient (PTC) thermistors.
For NTC, the NPTC pin should be tied to logic low (VBOTx
pin); for PTC, the NPTC pin should be tied to logic high (LDO
pin). If the part is set to NTC mode, the OT alarm is tripped
when the voltages at VT1 and VT2 drop below the trip point.
If the part is set to PTC mode, the OT alarm is tripped when
the voltages at VT1 and VT2 rise above the trip point.
+
+
+
VIN1
VIN0
AD8280
Figure 49. Three-Cell Connections for the AD8280
NUMBER OF CELLS SELECTION
THRESHOLD INPUTS
The part can be configured to work with three, four, five, or six
cells. Table 5 describes how to program the SEL0 and SEL1 pins
to determine the number of cells being monitored. A logic low
represents VBOTx, and a logic high represents the LDO output
voltage. Figure 47 through Figure 49 show how to connect the
cells to the part in a five-cell, four-cell, or three-cell application.
The thresholds (or trip points) are set externally with a voltage
divider providing maximum flexibility. The desired trip point
voltage is connected to the following pins: OV (overvoltage trip
point), UV (undervoltage trip point), and OT (overtemperature
trip point). The +5 V output of either the reference (REF) or the
LDO can be used as the top voltage of the divider. However,
because the reference output is more accurate than the LDO out-
put, the reference output is better suited to power the trip point
setting dividers. If the thermistor dividers used for temperature
sensing are driven from the LDO output, it is recommended that
the LDO be used to drive the OT trip point divider as well for
better temperature drift performance.
Table 5. SELx Pin Programming
Number of Cells Used
SEL0
SEL1
6 cells
5 cells (VIN5 shorted)
4 cells (VIN4 and VIN5 shorted)
3 cells (VIN3, VIN4, and VIN5 shorted)
0
0
1
1
0
1
0
1
Decoupling capacitors (0.1 μF) should be used with the bottom
leg of each divider in addition to a 2.2 μF capacitor at the REF
output, as shown in Figure 45.
VIN6
+
+
+
VIN5
VIN4
The REF pin should be loaded with no more than 25 kΩ of
resistance. Therefore, when using REF to drive three voltage
dividers (OV, UV, and OT), it is recommended that the resis-
tance of each divider total at least 75 kΩ. If driving only two
dividers (OV and UV) with the reference, each divider should
total no less than 50 kΩ.
VIN3
+
+
VIN2
VIN1
VIN0
AD8280
Figure 47. Five-Cell Connections for the AD8280
Rev. C | Page 17 of 24
AD8280
indicate the status of the part where the voltage alarms are
monitored, as well as the status of the parts above it in the daisy
chain. Make sure to use isolators to bring those signals outside
the high voltage battery environment.
TOP AND BOTTOM PART DESIGNATION
When configured in a daisy chain, the AD8280 operates differ-
ently, depending on where it is in the chain: top part (highest
potential), middle part, or bottom part (lowest potential). The
TOP and BOT pins are used to designate the location of each
part in the daisy chain. Table 6 is the logic table for identifying
the location of the part in the daisy chain or, when not used in
a daisy chain, identifying it as a single (standalone) part.
TYPICAL DAISY-CHAIN CONNECTIONS
Figure 50 shows the typical connections for configuring the part
in a daisy chain.
SHARED OR SEPARATE ALARMS
The logic high and logic low for the TOP and BOT pins are
different from those of the other logic pins of the AD8280.
The TOP and BOT pins are referenced to VTOP (logic high)
and VBOTx (logic low), respectively.
The AD8280 can be configured for three separate alarms or for
one shared alarm. Tying the ALRMSEL pin to a 5 V logic high
forces the part into separate alarm mode. In this mode, each
alarm trips only for its designated monitoring function. That is,
the OV alarm trips only if an overvoltage condition exists at any
of the cell inputs, the UV alarm trips only if an undervoltage
condition exists at any of the cell inputs, and the OT alarm trips
only if an overtemperature condition exists at either of the
temperature inputs.
Table 6. Designation of the AD8280 in Daisy-Chain and
Standalone Configurations
Desired Condition
TOP1
BOT1
Middle part (middle potential part)
Bottom part (lowest potential part)
Top part (highest potential part)
Single part (highest and lowest potential part)
0
0
1
1
0
1
0
1
In shared alarm mode, any of the three conditions—overvoltage,
undervoltage, or overtemperature—trips the alarm on all three
signal chains. In shared mode, it is necessary to monitor only
one alarm because all three contain the same signal.
1 For the TOP and BOT pins only, Logic 1 is VTOP and Logic 0 is VBOTx.
Bottom Part in Daisy-Chain Configuration
DEGLITCHING OPTIONS
The bottom part in a daisy-chain configuration is the master
part and accepts voltage inputs into the ENBI and TESTI pins.
The AIINOV, AIINUV, and AIINOT pins of the bottom part
are connected to the AIOUTOV, AIOUTUV, and AIOUTOT
pins, respectively, of the next higher potential part in the daisy
chain. The AIOUTOV, AIOUTUV, and AIOUTOT pins of the
bottom part can be left floating, or they can be tied to part
ground (VBOTx).
The deglitching circuitry is available so that the part is immune
to transients occurring at the cell inputs. If a transient voltage of
a high or low enough level to trip an alarm occurs at the input
to the part, the alarm state does not occur if the transient
voltage is present for less than the selected deglitch time.
The DGT0, DGT1, and DGT2 pins are used to establish the
deglitch time. Table 7 shows the options available and the
corresponding logic levels to use when setting the deglitch
time with the DGT0, DGT1, and DGT2 pins.
Middle Part in Daisy-Chain Configuration
When the AD8280 is designated as a middle part, the AIINOV,
AIINUV, AIINOT, ENBO, and TESTO pins are connected to
the AIOUTOV, AIOUTUV, AIOUTOT, ENBI, and TESTI pins,
respectively, of the AD8280 above it.
Table 7. Fault Detection Time Pin Programming
Deglitch Time
DGT0
DGT1
DGT2
0.0 sec
0.1 sec
0.8 sec
1.6 sec
3.2 sec
6.4 sec
12.8 sec
0
0
0
0
1
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
Top Part in Daisy-Chain Configuration
When the AD8280 is designated as a top part, the AIINOV,
AIINUV, AIINOT, ENBO, and TESTO pins can be left floating,
or they can be tied to VTOP.
Standalone Part
When the AD8280 is designated as a single part (used as a stand-
alone part), the AIOUTOV, AIOUTUV, and AIOUTOT pins
can be left floating, or they can be tied to part ground (VBOTx).
The AIINOV, AIINUV, AIINOT, ENBO, and TESTO pins can
be left floating or tied to VTOP. The AD8280 accepts voltage
inputs into the ENBI and TESTI pins.
Do not tie all three deglitching pins (DGT0, DGT1, and DGT2)
to logic high (111); this setting is used only during the testing of
the part at the factory.
Setting the deglitch time to 0.0 sec (000) allows the use of an
external deglitching circuit, if desired. Additionally, when the
deglitch time is set to 0.0 sec, the time required to ensure that
the part has completed its self-test is significantly reduced (see
the Self-Test section). The DGTx pins should be tied to a fixed
logic level and not toggled or changed during operation of the
AD8280.
Alarm Signals in Daisy-Chain Configuration
Regardless of the part designation, the alarm signals are
available as voltage outputs on any part in the chain on the
AVOUTOV, AVOUTUV, and AVOUTOT pins. These signals
Rev. C | Page 18 of 24
AD8280
100nF
10µF 0.1µF
VTOPx UV OV OT TESTO AIINxx ENBO
T1/T2
1.0µF
VCCx
LDOx
T1
UV
REF
OV
REF
OT
REF
10kΩ
10nF
VIN6
+
REF/FB
DGT0
DGT1
SEL0
SEL1
BOT
10kΩ
2.2µF
VIN5
VIN4
VIN3
VIN2
VIN1
+
+
NTC
AD8280
+
+
100nF
+
T2
VIN0
TOP
ALRMSEL/
DGT2/
AVOUTxx
VT1
VT2 VBOTx NPTC TESTI AIOUTxx ENBI GNDx
22pF
T3/T4
VTOPx UV OV OT TESTO AIINxx ENBO
VCCx
LDOx
T3
UV
REF
OV
REF
OT
REF
VIN6
REF/FB
+
VIN5
VIN4
VIN3
VIN2
VIN1
+
+
DGT0
DGT1
AD8280
+
+
SEL0
SEL1
T4
BOT
+
VIN0
VT1
TOP
ALRMSEL/
AVOUTxx
DGT2/
VT2
GNDx
VBOTx NPTC TESTI AIOUTxx ENBI
T5/T6
VTOPx UV OV OT TESTO AIINxx ENBO
VIN6
VCCx
LDOx
T5
OV
OT
UV
REF
REF
REF
+
REF/FB
DGT0
VIN5
VIN4
VIN3
VIN2
VIN1
+
+
DGT1
SEL0
+
+
AD8280
SEL1
T6
BOT
+
VIN0
VT1
TOP
ALRMSEL/
DGT2/
AVOUTxx
VT2 VBOTx NPTC TESTI AIOUTxx ENBI GNDx
VOUT
ENBI
TEST
Figure 50. Typical Daisy-Chain Connections
Rev. C | Page 19 of 24
AD8280
See Figure 51 for a timing diagram and Figure 52 for timing
definitions related to the self-test feature.
ENABLING AND DISABLING THE AD8280
The AD8280 can be disabled or put into a standby mode by
bringing the ENBI pin to logic low, lowering the quiescent
current of the AD8280 from a maximum of 2.0 mA to 1.0 μA
and dropping the LDO and reference output to 0 V. Bringing
the ENBI pin to a logic high takes the part out of standby mode
and enables it.
To initiate a self-test, the TESTI pin is prompted with a rising
edge from a 5 V logic level pulse (test pulse). The pulse applied
at TESTI must stay high for a minimum time (tST min). Follow-
ing the rising edge of the pulse to initiate the self-test, the alarm
status for any AVOUTxx or AIOUTxx pin goes into a logic high
status while the part performs its internal self-test. After sufficient
time to perform the test has elapsed and assuming that the part
passes self-test, the alarm status reverts to the unalarmed state,
a logic low. If the part fails self-test, the alarm remains in a logic
high state when the falling edge of the test pulse applied at
TESTI occurs.
When the AD8280 is used in a daisy-chain configuration, the
enable/disable signal is a voltage logic level that is sent to the
part designated as the bottom part (the bottom part monitors
the lowest voltage cells). The bottom part transfers the enable/
disable signal up the daisy chain via a current out of the ENBO
pin and into the ENBI pin of the next higher part in the daisy
chain. All the parts in the daisy chain are enabled by sending a
logic high to the ENBI pin of the bottom, or master, part. All
the parts in the daisy chain are disabled by sending a logic low
to the ENBI pin of the bottom part.
The minimum tST is dependent on the status of the DGTx pins.
If all three DGTx pins are tied to a logic low, the self-test ignores
the deglitch function of the part and completes the self-test in a
shorter time (50 ms max). When at least one DGTx pin is set to
logic high, the AD8280 defaults to the minimum deglitch time of
100 ms during the self-test. Because the self-test includes multiple
layers and passes, this minimum time is specified as 700 ms.
Therefore, if a faster self-test is required, the user should set the
internal deglitch time to 0.0 sec and use an external deglitch
circuit if deglitch is required.
ALARM OUTPUT
The alarm status of the AD8280 appears as a voltage logic level
at the AVOUTOV, AVOUTUV, and AVOUTOT pins. When the
AD8280 is in a daisy-chain configuration, the alarm status is
passed from the AIOUTxx pins of one part to the AIINxx pins
of the next lower potential part in the daisy chain. Figure 51
shows the output state when the part is in an unalarmed (logic
low) or alarmed (logic high) state.
Self-Test in Daisy-Chain Configuration
The self-test can also be used when multiple AD8280 parts
are configured in a daisy chain. The test pulse is applied to the
TESTI pin of the bottom part as a voltage and then travels up
the chain as a current. The self-test for each part is started as
soon as the part sees the rising edge of the test pulse, virtually
simultaneously. When the highest part in the chain passes its
self-test, it sends that information to the next lower part in the
daisy chain. Even if that part has already completed its self-test,
it cannot pass its own result on to the next part in the daisy
chain until it receives the pass signal from the part above it.
If the AD8280 is configured for the shared alarm mode, the status
of all three voltage output pins (AVOUTxx) is the same. In shared
alarm mode, the unused pins can be left floating, they can be tied
to ground through a high resistance to limit the current draw,
or they can be tied together.
SELF-TEST
The AD8280 has the unique capability of extensively testing
its internal components to ensure that they are functioning
correctly. This feature is very important to the designer who is
concerned with meeting the difficult safety integrity level guide-
lines of IEC 61508 or ISO 26262.
This process continues with each part lower down the chain.
Therefore, when a pass signal appears at the bottom part in the
daisy chain, it indicates that every part in the daisy chain passed
the self-test. If any part in the chain fails the self-test, the part
below the failing part never receives a pass signal, and, subse-
quently, the bottom part never receives a pass signal either.
Therefore, regardless of whether the bottom part passes self-test,
the AVOUTxx signals at the bottom part never change state from
the logic high that occurred when the self-test was initiated, and
the user will know that there is a failed part in the chain.
The part produces internal fault conditions and compares the
results to what is expected. The status of the alarm signals is
interrupted during the self-test, and the pass/fail status of the
self-test is communicated via the alarm status signal pins
(AVOUTxx and AIOUTxx).
Because the AD8280 uses an internal reference to perform its
self-test, the self-test detects open circuits and short circuits at
the threshold pins, as well.
Rev. C | Page 20 of 24
AD8280
NORMAL OPERATION
UNALARMED
AIOUTxx/AVOUTxx
ALARMED
AIOUTxx/AVOUTxx
DURING SELF-TEST MODE
TESTI
AIOUTxx/AVOUTxx
TEST OK
AIOUTxx/AVOUTxx
TEST FAILS
LOW AT FALLING EDGE OF TESTI:
PART PASSES SELF-TEST
HIGH AT FALLING EDGE OF TESTI:
PART FAILS SELF-TEST
AIOUTxx/AVOUTxx
ALARMED
TEST OK
Figure 51. Timing Diagram for Alarms at AIOUTxx and AVOUTxx
Self-Test and Alarm Conditions
Self-Test Timing and Monitoring Strategy
If an alarm occurs just prior to or just after the self-test pulse is
initiated, the alarm causes the self-test to fail. The time span for
this condition depends on the deglitch time.
When monitoring the signals for self-test on the AD8280, note
the following items:
•
•
•
After initiating a self-test of the AD8280 with a rising edge
on the TESTI pin, the alarm appearing at the AVOUTxx
pin remains valid up to tRE max.
•
Deglitch time = 0.0 sec. The part fails self-test if an alarm
occurs in the time period from 20 ms before the leading
edge of the self-test pulse to 20 ms after the leading edge
of the self-test pulse.
When the rising edge of the TESTI pulse occurs, the user
should monitor the AVOUTxx pin to make sure that it is
in the high state after the tRE max time has elapsed.
After the tST max time has elapsed, the user can verify that
the AVOUTxx pin has changed to the low state, indicating
that the part or parts passed the self-test. The user must
also ensure that the minimum length of the TESTI pulse
is greater than tST max. The status of the self-test on the
AVOUTxx pin is valid until tSTV min after the trailing edge
of the TESTI pulse.
•
Deglitch time > 0.0 sec. The part fails self-test if an alarm
occurs in the time period from 120 ms before the leading
edge of the self-test pulse to 120 ms after the leading edge
of the self-test pulse.
Therefore, in the unusual circumstance that the part fails self-
test and there is an alarm condition state after the self-test, it
is recommended that the user retest the part to ensure that
an alarm did not occur just prior to or just after initiating the
self-test.
•
The alarm state is valid again tFE max after the trailing edge
of the pulse.
The self-test works when the part is in the shared alarm mode
or in the separate alarm mode. When the part is in the separate
alarm mode, the self-test status on an output pertains only to
that portion of the internal circuit relevant to the condition being
monitored: overvoltage, undervoltage, or overtemperature.
Rev. C | Page 21 of 24
AD8280
NO ALARM WHEN SELF-TEST IS INITIATED
1
TESTI
0
1
AVOUTxx
SELF-TEST PASS
0
tSTV
1
AVOUTxx
SELF-TEST FAIL
0
tFE
tRE
tST
ALARM WHEN SELF-TEST IS INITIATED
1
TESTI
0
1
AVOUTxx
SELF-TEST PASS
0
tSTV
1
AVOUTxx
SELF-TEST FAIL
tRE
0
tST
tFE
NOTES
1. tRE IS THE TIME FROM THE RISING EDGE OF THE TEST PULSE (TESTI) TO THE START OF THE SELF-TEST.
2. tST IS THE TIME FROM THE RISING EDGE OF THE TEST PULSE UNTIL THE PART COMPLETES ITS SELF-TEST (TEST PULSE MUST BE
LONGER THAN tST MAX).
3. tSTV IS THE TIME FROM THE FALLING EDGE OF THE TEST PULSE THAT THE SELF-TEST INDICATION REMAINS VALID (LOW = PASS, HIGH = FAIL).
4. tFE IS THE TIME FROM THE FALLING EDGE OF THE TEST PULSE UNTIL THE SELF-TEST DATA IS CLEARED AND THE ALARM DATA IS AGAIN VALID.
Figure 52. Timing Definitions
Rev. C | Page 22 of 24
AD8280
Sample Calculation
PROTECTION COMPONENTS AND PULL-UP/
PULL-DOWN RESISTORS
Following is a sample calculation for overvoltage accuracy. In
this calculation, the following conditions are assumed:
As shown in Figure 45, several devices are added to provide
protection in a high voltage environment. Zener Diode Z1
ensures that the six-cell stack voltage does not significantly
exceed the maximum 30 V across the part. It is recommended
that a 33 V rated Zener diode be used for Z1.
•
Resistors used in the external resistor divider to set the trip
points are 1ꢀ, 100 ppm/°C resistors.
•
•
Temperature range is −40°C to +85°C.
Desired overvoltage trip point is 4.0 V (resistor values
selected should be 15 kΩ and 60 kΩ).
The user can also use diodes in the daisy-chain lines (anode to
cathode from higher potential to lower potential) to protect the
parts in the event that an open circuit appears on the battery
connections, causing a high reverse voltage across the AD8280
(these diodes are not shown in Figure 45). The diodes should
have a reverse voltage rating comparable to the highest voltage
of the battery system.
The resulting sources of error are described in this section.
Maximum Trip Point Error
The maximum trip point error is 15 mV.
Maximum Reference Error
The maximum reference error is as follows:
(60/(60 + 15)) × 50 mV = 40 mV
If diodes are used in the daisy chain, it is also recommended that
a diode be used between the top cell in the stack (anode) and
VTOP (cathode) of the top part, as well as between VBOTx
(anode) of each part and VTOP (cathode) of the next lowest
potential part in the daisy chain.
Maximum Resistor Tolerance Error
The maximum resistor tolerance error depends on the values
of the resistors. If one resistor is high and the other is low, the
worst-case error is as follows:
Because there are no pull-up or pull-down resistors internal to
the part, the user may want to pull down the TESTI pin of the
bottom part through a 10 kΩ resistor to VBOTx (part ground).
The addition of this resistor ensures that the part is not locked
in self-test mode if the line opens. Also, the user may want to pull
up the ENBI pin on the bottom part of a daisy chain so that if the
line opens, the chain stays in the enabled (powered up) mode.
(60.6/(60.6 + 14.85)) × 5.00 V = 4.016 V (error of +16 mV)
(59.4/(59.4 + 15.15)) × 5.00 V = 3.984 V (error of −16 mV)
In this sample calculation, the maximum resistor tolerance
error is 16 mV.
Maximum Temperature Coefficient Error
EMI CONSIDERATIONS
If one resistor drifts high and the other resistor drifts low, the
worst-case error is as follows:
To increase immunity to electromagnetic interference (EMI), use
the following components and layout schemes (see Figure 50).
60 kΩ + (100 ppm/°C × (25°C − (−40°C)) × 60 kΩ) = 60.39 kΩ
15 kΩ − (100 ppm/°C × (25°C − (−40°C)) × 15 kΩ) = 14.9 kΩ
(60.39/(60.39 + 14.90)) × 5.00 V = 4.010 V (error of +10 mV)
or
•
•
•
Use a 22 pF capacitor on each of the daisy-chain lines.
Route the daisy-chain lines on an inner PCB layer.
Use ground planes (connected to VBOTx from the higher
potential part) both over and under the daisy-chain lines to
shield them.
60 kΩ − (100 ppm/°C × (25°C − (−40°C)) × 60 kΩ) = 59.61 kΩ
15 kΩ + (100 ppm/°C × (25°C − (−40°C)) × 15 kΩ) = 15.1 kΩ
(59.61/(59.61 + 15.10)) × 5.00 V = 3.990 V (error of −10 mV)
•
Route the connections from VBOTx to VTOP to best
ensure a low impedance connection between them.
Use ferrite beads on the VTOP lines as shown in Figure 50.
Use 100 nF capacitors across each of the six-cell battery stacks.
Place the AD8280 parts as close together as possible on the
board to minimize the length of the daisy-chain lines.
•
•
•
In this sample calculation, the maximum temperature coefficient
error is 10 mV.
Total System Accuracy
SYSTEM ACCURACY CALCULATION
The system accuracy, or the sum of all the errors, is 81 mV. If
the resistor pair coefficients are matched so that drift is in the
same direction, that portion of the error can be ignored, and the
total system accuracy would be 71 mV.
When calculating system accuracy, there are four error sources
to consider:
•
•
•
•
Trip point error (see Table 1)
Reference voltage error (see Table 1)
Resistor tolerance
Resistor temperature coefficient
Rev. C | Page 23 of 24
AD8280
OUTLINE DIMENSIONS
9.20
9.00 SQ
8.80
0.75
0.60
0.45
1.60
MAX
37
48
36
1
PIN 1
7.20
TOP VIEW
(PINS DOWN)
7.00 SQ
6.80
1.45
1.40
1.35
0.20
0.09
7°
3.5°
0°
0.08
COPLANARITY
25
12
0.15
0.05
13
24
SEATING
0.27
0.22
0.17
PLANE
VIEW A
0.50
BSC
LEAD PITCH
VIEW A
ROTATED 90° CCW
COMPLIANT TO JEDEC STANDARDS MS-026-BBC
Figure 53. 48-Lead Low Profile Quad Flat Package [LQFP]
(ST-48)
Dimensions shown in millimeters
ORDERING GUIDE
Model1, 2
AD8280WASTZ
AD8280WASTZ-RL
AD8280-EVALZ
Temperature Range
Package Description
48-Lead LQFP
48-Lead LQFP
Package Option
−40°C to +105°C
−40°C to +105°C
ST-48
ST-48
Evaluation Board with Two AD8280WASTZ Devices
1 Z = RoHS Compliant Part.
2 W = Qualified for Automotive Applications.
AUTOMOTIVE PRODUCTS
The AD8280W models are available with controlled manufacturing to support the quality and reliability requirements of automotive
applications. Note that these automotive models may have specifications that differ from the commercial models; therefore, designers
should review the Specifications section of this data sheet carefully. Only the automotive grade products shown are available for use in
automotive applications. Contact your local Analog Devices account representative for specific product ordering information and to
obtain the specific Automotive Reliability reports for these models.
©2010-2011 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D08911-0-7/11(C)
Rev. C | Page 24 of 24
相关型号：
©2020 ICPDF网 联系我们和版权申明