AD8538ARZ-REEL [ADI]
Low Power, Precision Auto-Zero Op Amp; 低功耗，精密自动调零运算放大器
| 型号： | AD8538ARZ-REEL |
| 厂家： | 
ADI |
| 描述： | Low Power, Precision Auto-Zero Op Amp |
| 文件： | 总12页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Power, Precision Auto-Zero Op Amp
AD8538
PIN CONFIGURATION DIAGRAMS
FEATURES
Low offset voltage: 13 μV maximum
Input offset drift: 0.03 μV/°C
Single-supply operation: 2.7 V to 5.5 V
High gain, CMRR, and PSRR
OUT
V–
1
2
3
5
V+
AD8538
TOP VIEW
(Not to Scale)
+IN
4
–IN
Low input bias current: 25 pA
Low supply current: 180 μA
Figure 1. 5-Lead TSOT-23 (UJ-5)
APPLICATIONS
NC
−IN
+IN
V−
1
2
3
4
8
7
6
5
NC
V+
Mobile communications
Portable instrumentation
Battery-powered devices
Sensor interfaces
Temperature measurement
Electronic scales
AD8538
OUT
NC
TOP VIEW
(Not to Scale)
NC = NO CONNECT
Figure 2. 8-Lead SOIC_N (R-8)
GENERAL DESCRIPTION
The AD8538 is a very high precision amplifier featuring
extremely low offset voltage, low input bias current, and low
power consumption. The supply current is less than 180 μA at
5.0 V. Operation is fully specified from 2.7 V to 5.0 V single
supply ( 1.35 V to 2.5 V dual supply).
The AD8538 operates using very low power making this
amplifier ideal for battery-powered devices and portable
equipment.
The AD8538 is specified over the extended industrial temperature
range (−40°C to +125°C). The AD8538 amplifier is available in
5-lead TSOT-23, and 8-lead, narrow body SOIC packages.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
www.analog.com
© 2005 Analog Devices, Inc. All rights reserved.
AD8538
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................5
Thermal Resistance.......................................................................5
ESD Caution...................................................................................5
Typical Performance Characteristics ..............................................6
Outline Dimensions....................................................................... 12
Ordering Guide .......................................................................... 12
Applications....................................................................................... 1
Pin Configuration Diagrams........................................................... 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Specifications............................................................... 3
REVISION HISTORY
10/05—Revision 0: Initial Version
Rev. 0 | Page 2 of 12
AD8538
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
@VS = 5.0 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise specified.
Table 1.
Parameter
Symbol Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
5
13
30
25
100
1.0
50
150
5
μV
μV
pA
pA
nA
pA
pA
V
−40°C ≤ TA ≤ +125°C
Input Bias Current
IB
15
35
0.7
20
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
Input Offset Current
IOS
−40°C ≤ TA ≤ +125°C
VCM = 0 V to 5 V
−40°C ≤ TA ≤ +125°C; VCM = 0.2 V to 4.8 V 100
RL = 10 kΩ, VO = 0.1 V to 4.9 V
−40°C ≤ TA ≤ +125°C
Input Voltage Range
0
Common-Mode Rejection Ratio
CMRR
AVO
115
150
135
141
135
0.03
dB
dB
dB
dB
μV/°C
Large Signal Voltage Gain
115
110
Offset Voltage Drift
−40°C ≤ TA ≤ +125°C
0.1
ΔVOS/ΔT
VOH
OUTPUT CHARACTERISTICS
Output Voltage High
RL = 100 kΩ to ground
−40°C ≤ TA ≤ +125°C
RL = 10 kΩ to ground
−40°C ≤ TA ≤ +125°C
RL = 100 kΩ to V+
−40°C ≤ TA ≤ +125°C
RL = 10 kΩ to V+
−40°C ≤ TA ≤ +125°C
4.99
4.98
4.95
4.94
4.998
4.970
V
V
V
V
mV
mV
mV
mV
mA
Output Voltage Low
VOL
1.9
2.8
17
20
25
5
7
20
30
Short-Circuit Limit
POWER SUPPLY
ISC
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7 V to 5.0 V
−40°C ≤ TA ≤ +125°C
IO = 0
105
100
125
125
150
190
dB
dB
μA
μA
Supply Current/Amplifier
180
215
−40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Settling Time 0.01%
Overload Recovery Time
Gain Bandwidth Product
Phase Margin
SR
tS
RL =10 kΩ
G = 1, 2 V step, CL = 20 pF, RL = 1 kΩ
0.4
10
0.05
600
65
V/μs
ꢀs
ms
kHz
Degrees
GBP
ØO
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
en p-p
en
f = 0.1 Hz to 10 Hz
f = 1 kHz
2.0
50
μV p-p
nV/√Hz
Rev. 0 | Page 3 of 12
AD8538
@ VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise specified.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
IB
5
13
30
25
100
1.0
50
150
2.7
μV
μV
pA
pA
nA
pA
pA
V
−40°C ≤ TA ≤ +125°C
Input Bias Current
15
35
0.7
20
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
Input Offset Current
IOS
−40°C ≤ TA ≤ +125°C
Input Voltage Range
0
Common-Mode Rejection Ratio
CMRR
AVO
VCM = 0 V to 2.5 V
110
100
110
105
140
135
140
135
0.03
dB
dB
dB
dB
μV/°C
−40°C ≤ TA ≤ +125°C
RL = 10 kΩ, VO = 0.1 V to 1.7 V
−40°C ≤ TA ≤ +125°C
−40°C ≤ TA ≤ +125°C
Large Signal Voltage Gain
Offset Voltage Drift
0.1
ΔVOS/ΔT
VOH
OUTPUT CHARACTERISTICS
Output Voltage High
RL = 100 kΩ to ground
−40°C ≤ TA ≤ +125°C
RL = 10 kΩ to ground
−40°C ≤ TA ≤ +125°C
RL = 100 kΩ to V+
−40°C ≤ TA ≤ +125°C
RL = 10 kΩ to V+
−40°C ≤ TA ≤ +125°C
2.68
2.68
2.67
2.66
2.698
2.68
V
V
V
V
mV
mV
mV
mV
mA
Output Voltage Low
VOL
1.7
2.4
14
20
8
5
5
20
25
Short-Circuit Limit
POWER SUPPLY
ISC
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7 V to 5.5 V
−40°C ≤ TA ≤ +125°C
IO = 0
105
100
125
125
150
190
dB
dB
μA
μA
Supply Current/Amplifier
180
215
−40°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
Settling Time 0.01%
Overload Recovery Time
Gain Bandwidth Product
Phase Margin
SR
tS
RL = 10 kΩ
G = 1, 1 V step, CL = 20 pF, RL = 1 kΩ
0.4
5
0.05
600
65
V/μs
ꢀs
ms
kHz
Degrees
GBP
ØO
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
en p-p
en
f = 0.1 Hz to 10 Hz
f = 1 kHz
2.0
50
μV p-p
nV/√Hz
Rev. 0 | Page 4 of 12
AD8538
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Parameter
Rating
Supply Voltage
Input Voltage
Differential Input Voltage
+6 V
VSS − 0.3 V to VDD + 0.3 V
6 V
Output Short-Circuit Duration to GND Observe derating curve
Storage Temperature Range
–65°C to +150°C
300°C
–40°C to +125°C
−65°C to +150°C
Absolute maximum ratings apply at 25°C, unless otherwise
noted.
Lead Temperature (Soldering, 60 sec)
Operating Temperature Range
Junction Temperature Range
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4. Thermal Characteristics
Package Type
θJA
θJC
61
43
Unit
°C/W
°C/W
5-Lead TSOT-23 (UJ-5)
8-Lead SOIC_N (R-8)
207
158
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 5 of 12
AD8538
TYPICAL PERFORMANCE CHARACTERISTICS
VSY = 5 V or 2.5 V, unless otherwise noted.
700
600
500
400
300
200
100
0
450
V
= 5V AND 2.7V
V
= 5V
SY
SY
0V < V
< 5V
CM
= 25°C
400
350
300
250
200
150
100
50
T
A
0
25
45
65
85
105
125
–10.0 –8.4 –6.8 –5.2 –3.6 –2.0 –0.4 1.2 2.8 4.4 6.0 7.6 9.2
TEMPERATURE (°C)
INPUT OFFSET VOLTAGE (µV)
Figure 6. Input Bias Current vs. Temperature
Figure 3. Input Offset Voltage Distribution
160
140
120
100
80
14
12
10
8
V
= 5V
SY
–40°C < T < +125°C
T
= 25°C
A
A
6
60
4
40
2
20
0
0
0
5
0
0.012 0.024 0.036 0.048 0.060 0.072 0.084 0.096
1
2
3
4
SUPPLY VOLTAGE (V)
TCV (µV/°C)
OS
Figure 7. Supply Current vs. Supply Voltage
Figure 4. Input Offset Voltage Drift Distribution
200
150
100
50
10
8
V
T
= 5V
SY
= 25°C
A
V
= 5V
6
SY
4
V
= 2.7V
SY
2
0
–2
–4
–6
–8
–10
0
–40
10
60
TEMPERATURE (°C)
110
0
1
2
3
4
5
INPUT COMMON-MODE VOLTAGE (V)
Figure 8. Supply Current vs. Temperature
Figure 5. Input Offset Voltage vs. Input Common-Mode Voltage
Rev. 0 | Page 6 of 12
AD8538
10000
1000
100
10
70
60
V
= 5V
SY
= 25°C
T
A
135
50
V
– V
OH
SY
90
45
0
40
V
OL
30
SOURCE
20
ФM
1
10
0
SINK
0.1
V
R
C
= ±2.5V AND ±1.35V
= 100kΩ
= 20pF
SY
–10
L
L
0.01
0.001
–45
1M
–20
1k
0.01
0.1
LOAD CURRENT (mA)
1
10
10k
100k
FREQUENCY (Hz)
Figure 9. Output Saturation Voltage vs. Load Current
Figure 12. Open-Loop Gain and Phase vs. Frequency
35
30
25
20
15
10
5
120
100
80
60
40
20
0
V
R
= 5V
= 10kΩ
SY
V
= 5V AND 2.7V
SY
= 25°C
L
T
A
V
– V
OH
SY
V
OL
0
100
1k
10k
100k
1M
–40 –25 –10
5
20
35
50
65
80
95 110 125
FREQUENCY (Hz)
TEMPERATURE (°C)
Figure 13. CMRR vs. Frequency
Figure 10. Output Saturation Voltage vs. Temperature
60
40
100
80
60
40
20
0
V
C
R
= 5V AND 2.7V
= 20pF
= 2kΩ
V
T
= ±2.5V AND ±1.35V
SY
SY
= 25°C
L
L
A
A
A
= 100
= 10
V
+PSRR
V
20
–PSRR
A
= 1
V
0
–20
1k
10k
100k
1M
100
1k
10k
FREQUENCY (Hz)
100k
1M
FREQUENCY (Hz)
Figure 11. Closed-Loop Gain vs. Frequency
Figure 14. PSRR vs. Frequency
Rev. 0 | Page 7 of 12
AD8538
1000
V
V
= 5V
= 1
= 300pF
= 10kΩ
= 5V AND 2.7V
SY
SY
A
C
R
V
L
L
A
= 100
V
100
10
A
= 10
V
A
= 1
V
1
0.1
0.01
100
1k
10k
100k
1M
TIME (4µs/DIV)
FREQUENCY (Hz)
Figure 15. Closed-Loop Output Impedance vs. Frequency
Figure 18. Large Signal Transient Response
60
50
40
30
20
10
0
V
A
= 5V
= –50
SY
V
= 5V
= 25°C
= 2kΩ
SY
V
T
A
100
0
R
L
OS+
0
OS–
–2.5
1
10
100
1000
TIME (10µs/DIV)
LOAD CAPACITANCE (pF)
Figure 16. Small Signal Overshoot vs. Load Capacitance
Figure 19. Positive Overload Recovery
V
A
= 5V
V
= 5V AND 2.7V
= 1
= 300pF
= 2kΩ
SY
= –50
SY
A
C
R
V
V
L
L
0
–100
2.5
0
TIME (4µs/DIV)
TIME (10µs/DIV)
Figure 17. Small Signal Transient Response
Figure 20. Negative Overload Recovery
Rev. 0 | Page 8 of 12
AD8538
1000
V
= 5V
SY
V
IN
T
= 25°C
A
V
OUT
100
V
= 5V
SY
A
= 1
V
V
= 6V p-p
IN
R
= 10kΩ
L
10
10
100
1k
10k
TIME (200µs/DIV)
FREQUENCY (Hz)
Figure 23. No Phase Reversal
Figure 21. Voltage Noise Density
V
= 5V AND 2.7V
SY
TIME (1s/DIV)
Figure 22. 0.1 Hz to 10 Hz Input Voltage Noise
Rev. 0 | Page 9 of 12
AD8538
VS = 2.7 V or 1.35 V.
180
10000
1000
100
10
V
= 2.7V
SY
0V < V
V
= 2.7V
SY
= 25°C
< 2.7V
CM
= 25°C
T
A
160
140
120
100
80
T
A
60
SOURCE
SINK
40
1
20
0
0.1
0.001
–10.0–8.4 –6.8 –5.2 –3.6 –2.0 –0.4 1.2 2.8 4.4 6.0 7.6 9.2
0.01
0.1
1
INPUT OFFSET VOLTAGE (µV)
LOAD CURRENT (mA)
Figure 24. Input Offset Voltage Distribution
Figure 27. Output Saturation Voltage vs. Load Current
35
30
25
20
15
10
5
30
25
20
15
10
5
V
R
= 2.7V
= 10kΩ
SY
V
= 2.7V
SY
L
–40°C < T < +125°C
A
V
= VOH
SY
VOL
0
0
–40 –25 –10
5
20
35
50
65
80
95 110 125
0
0.012 0.024 0.036 0.048 0.060 0.072 0.084 0.096
TCV (µV/°C)
OS
TEMPERATURE (°C)
Figure 25. Input Offset Voltage Drift Distribution
Figure 28. Output Saturation Voltage vs. Temperature
80
70
60
50
40
30
20
10
0
10
V
T
= 2.7V
V
= 2.7V
SY
= 25°C
SY
= 25°C
T
A
A
8
6
R
= 2kΩ
L
4
2
0
–2
–4
–6
–8
–10
OS+
OS–
1
1000
0
0.5
1.0
1.5
2.0
2.5
10
100
LOAD CAPACITANCE (pF)
INPUT COMMON-MODE VOLTAGE (V)
Figure 26. Input Offset Voltage vs. Input Common-Mode Voltage
Figure 29. Small Signal Overshoot vs. Load Capacitance
Rev. 0 | Page 10 of 12
AD8538
1000
100
10
V
= 2.7V
= 1
= 100pF
= 10kΩ
SY
V
= 2.7V
= 25°C
SY
A
C
R
V
L
L
T
A
10
100
1k
10k
100k
TIME (4µs/DIV)
FREQUENCY (Hz)
Figure 30. Large Signal Transient Response
Figure 31. Voltage Noise Density
Rev. 0 | Page 11 of 12
AD8538
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
2.90 BSC
8
1
5
4
5
4
6.20 (0.2440)
5.80 (0.2284)
4.00 (0.1574)
3.80 (0.1497)
2.80 BSC
1.60 BSC
1
2
3
1.27 (0.0500)
BSC
0.50 (0.0196)
0.25 (0.0099)
PIN 1
× 45°
1.75 (0.0688)
1.35 (0.0532)
0.95 BSC
0.25 (0.0098)
0.10 (0.0040)
1.90
BSC
*
0.90
0.87
0.84
8°
0.51 (0.0201)
0.31 (0.0122)
0° 1.27 (0.0500)
COPLANARITY
0.10
0.25 (0.0098)
0.17 (0.0067)
SEATING
PLANE
0.40 (0.0157)
*
1.00 MAX
0.20
0.08
COMPLIANT TO JEDEC STANDARDS MS-012-AA
8°
4°
0°
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
0.10 MAX
0.60
0.45
0.30
0.50
0.30
SEATING
PLANE
*
COMPLIANT TO JEDEC STANDARDS MO-193-AB WITH
THE EXCEPTION OF PACKAGE HEIGHT AND THICKNESS.
Figure 32. 5-Lead Thin Small Outline Transistor Package [TSOT_23]
Figure 33. 8-Lead Standard Small Outline Package [SOIC_N]
(UJ-5)
Narrow Body
(R-8)
Dimensions shown in millimeters
Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Model
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Package Description
5-Lead TSOT-23
5-Lead TSOT-23
5-Lead TSOT-23
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
Package Option
Branding
AOC
AOC
AD8538AUJZ-R21
AD8538AUJZ-REEL1
AD8538AUJZ-REEL71
AD8538ARZ1
AD8538ARZ-REEL1
AD8538ARZ-REEL71
UJ-5
UJ-5
UJ-5
R-8
R-8
R-8
AOC
1 Z = Pb-free part.
©
2005 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D05624-0-10/05(0)
Rev. 0 | Page 12 of 12
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ADI
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