AD8641ARZ [ADI]

Low Power, Rail-to-Rail Output Precision JFET Amplifier; 低功耗,轨到轨输出精密JFET放大器
AD8641ARZ
型号: AD8641ARZ
厂家: ADI    ADI
描述:

Low Power, Rail-to-Rail Output Precision JFET Amplifier
低功耗,轨到轨输出精密JFET放大器

运算放大器 放大器电路 光电二极管
文件: 总16页 (文件大小:502K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Low Power, Rail-to-Rail Output  
Precision JFET Amplifier  
AD8641/AD8642/AD8643  
FEATURES  
PIN CONFIGURATIONS  
Low supply current: 250 µA max  
Very low input bias current: 1 pA max  
Low offset voltage: 750 µV max  
Single-supply operation: 5 V to 26 V  
Dual-supply operation: 2.5 V to 13 V  
Rail-to-rail output  
OUT  
VEE  
+IN  
1
2
3
5
4
VCC  
AD8641  
TOP VIEW  
(Not to Scale)  
–IN  
Figure 1. 5-Lead SC70 (KS-5)  
Unity-gain stable  
No phase reversal  
SC70 package  
NC  
–IN  
1
2
3
4
8
7
6
5
NC  
AD8641  
VCC  
OUT  
NC  
+IN  
TOP VIEW  
(Not to Scale)  
VEE  
APPLICATIONS  
NC = NO CONNECT  
Line-/battery-powered instruments  
Photodiode amplifiers  
Precision current sensing  
Medical instrumentation  
Industrial controls  
Precision filters  
Figure 2. 8-Lead SOIC (R-8)  
OUT A  
–IN A  
+IN A  
V–  
1
2
3
4
8
7
6
5
V+  
AD8642  
OUT B  
–IN B  
+IN B  
TOP VIEW  
(Not to Scale)  
Figure 3. 8-Lead SOIC (R-8)  
Portable audio  
ATE  
OUT A  
–IN A  
+IN A  
V–  
1
2
3
4
8
7
6
5
V+  
AD8642  
OUT B  
–IN B  
+IN B  
TOP VIEW  
(Not to Scale)  
GENERAL DESCRIPTION  
The AD8641/AD8642/AD8643 are low power, precision JFET  
input amplifiers featuring extremely low input bias current and  
rail-to-rail output. The ability to swing nearly rail-to-rail at the  
input and rail-to-rail at the output enables designers to buffer  
CMOS DACs, ASICs, and other wide output swing devices in  
single-supply systems. The outputs remain stable with  
capacitive loads of more than 500 pF.  
Figure 4. 8-Lead MSOP (RM-8)  
OUT A  
–IN A  
+IN A  
V+  
1
2
3
4
5
6
7
14 OUT D  
13 –IN D  
12 +IN D  
11 V–  
AD8643  
TOP VIEW  
(Not to Scale)  
+IN B  
–IN B  
OUT B  
10 +IN C  
9
8
–IN C  
OUT C  
The AD8641/AD8642/AD8643 are suitable for applications  
utilizing multichannel boards that require low power to manage  
heat. Other applications include photodiodes, ATE reference  
level drivers, battery management, and industrial controls.  
Figure 5. 14-Lead SOIC (R-14)  
The AD8641/AD8642/AD8643 are fully specified over the  
extended industrial temperature range of –40°C to +125°C. The  
AD8641 is available in 5-lead SC70 and 8-lead SOIC lead-free  
packages. The AD8642 is available in 8-lead MSOP and 8-lead  
SOIC lead-free packages. The AD8643 is available in 14-lead  
SOIC and 16-lead, 3 mm × 3 mm, LFCSP lead-free packages.  
12 –IN D  
11 +IN D  
10 V–  
–IN A  
+IN A  
V+  
1
2
3
4
PIN 1  
INDICATOR  
AD8643  
TOP VIEW  
+IN B  
9 +IN C  
NC = NO CONNECT  
Figure 6. 16-Lead LFCSP (CP-16) (Not Drawn to Scale)  
Rev. B  
Information furnished by Analog Devices is believed to be accurate and reliable.  
However, no responsibility is assumed by Analog Devices for its use, nor for any  
infringements of patents or other rights of third parties that may result from its use.  
Specifications subject to change without notice. No license is granted by implication  
or otherwise under any patent or patent rights of Analog Devices. Trademarks and  
registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2005 Analog Devices, Inc. All rights reserved.  
AD8641/AD8642/AD8643  
TABLE OF CONTENTS  
Specifications..................................................................................... 3  
Electrical Characteristics............................................................. 3  
Absolute Maximum Ratings............................................................ 5  
ESD Caution.................................................................................. 5  
Typical Performance Characteristics ............................................. 6  
Outline Dimensions ....................................................................... 13  
Ordering Guide........................................................................... 14  
REVISION HISTORY  
4/05—Rev. A to Rev. B  
10/04—Initial Version: Revision 0  
Added AD8643 ...................................................................Universal  
Added 14-Lead SOIC.........................................................Universal  
Added 16-Lead LFCSP.......................................................Universal  
Updated Outline Dimensions....................................................... 13  
Changes to Ordering Guide .......................................................... 14  
3/05—Rev. 0 to Rev. A  
Added AD8642 ...................................................................Universal  
Changes to General Description .................................................... 1  
Added Figure 3 and Figure 4........................................................... 1  
Changes to Specifications................................................................ 3  
Changes to Absolute Maximum Ratings....................................... 5  
Changes to Figure 22........................................................................ 8  
Changes to Figure 23........................................................................ 9  
Changes to Figure 41...................................................................... 12  
Updated Outline Dimensions....................................................... 13  
Changes to Ordering Guide .......................................................... 14  
Rev. B | Page 2 of 16  
AD8641/AD8642/AD8643  
SPECIFICATIONS  
ELECTRICAL CHARACTERISTICS  
@ VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.  
Table 1.  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
Offset Voltage  
VOS  
50  
750  
1
1.5  
1.6  
1
µV  
AD8643 LFCSP only  
–40°C < TA < +85°C  
+85°C < TA < +125°C, VCM = 1.5 V  
mV  
mV  
mV  
pA  
Input Bias Current  
IB  
0.25  
–40°C < TA < +125°C  
–40°C < TA < +125°C  
180  
0.5  
60  
3
pA  
pA  
pA  
V
dB  
V/mV  
µV/°C  
Input Offset Current  
IOS  
Input Voltage Range  
Common-Mode Rejection Ratio  
Large Signal Voltage Gain  
Offset Voltage Drift  
0
74  
80  
CMRR  
AVO  
∆VOS/∆T  
VCM = 0 V to 2.5 V  
RL = 10 kΩ, VO = 0.5 to 4.5 V  
–40°C < TA < +125°C  
93  
140  
2.5  
OUTPUT CHARACTERISTICS  
Output Voltage High  
VOH  
VOL  
IOUT  
4.95  
4.94  
V
V
V
V
IL = 1 mA, –40°C to +125°C  
IL = 1 mA, –40°C to +125°C  
Output Voltage Low  
0.05  
0.05  
0.01  
6
Output Current  
mA  
POWER SUPPLY  
Power Supply Rejection Ratio  
Supply Current/Amplifier  
PSRR  
ISY  
VS = 5 V to 26 V  
90  
107  
195  
dB  
µA  
µA  
250  
270  
–40°C < TA < +125°C  
DYNAMIC PERFORMANCE  
Slew Rate  
SR  
2
V/µs  
Gain Bandwidth Product  
GBP  
AD8641, AD8642  
AD8643  
3
2.5  
50  
MHz  
MHz  
Degrees  
Phase Margin  
Øm  
NOISE PERFORMANCE  
Voltage Noise  
Voltage Noise Density  
Current Noise Density  
eN p-p  
eN  
iN  
f = 0.1 Hz to 10 Hz  
f = 1 kHz  
f = 1 kHz  
4.0  
28.5  
0.5  
µV p-p  
nV/√Hz  
fA/√Hz  
Rev. B | Page 3 of 16  
 
AD8641/AD8642/AD8643  
@ VS= 13 V, VCM = 0 V, TA =25°C, unless otherwise noted.  
Table 2.  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INPUT CHARACTERISTICS  
Offset Voltage  
VOS  
70  
750  
1
1.5  
1
µV  
AD8643 LFCSP only  
–40° < TA < +125°C  
mV  
mV  
pA  
Input Bias Current  
IB  
0.25  
–40°C < TA < +125°C  
–40°C < TA < +125°C  
260  
0.5  
65  
pA  
pA  
pA  
Input Offset Current  
IOS  
Input Voltage Range  
Common-Mode Rejection Ratio  
Large Signal Voltage Gain  
Offset Voltage Drift  
–13  
90  
215  
+10  
V
dB  
V/mV  
µV/°C  
CMRR  
AVO  
∆VOS/∆T  
VCM = −13 V to +10 V  
RL = 10 kΩ, VO = –11 V to +11 V  
–40°C < TA < +125°C  
107  
290  
2.5  
OUTPUT CHARACTERISTICS  
Output Voltage High  
VOH  
VOL  
IOUT  
+12.95  
+12.94  
V
V
V
V
IL = 1 mA, –40°C to +125°C  
IL = 1 mA, –40°C to +125°C  
Output Voltage Low  
–12.95  
–12.94  
Output Current  
12  
mA  
POWER SUPPLY  
Power Supply Rejection Ratio  
Supply Current/Amplifier  
PSRR  
ISY  
VS = 2.5 V to 13 V  
–40°C < TA < +125°C  
90  
107  
200  
dB  
µA  
µA  
290  
330  
DYNAMIC PERFORMANCE  
Slew Rate  
SR  
3
V/µs  
Gain Bandwidth Product  
Phase Margin  
GBP  
Øm  
3.5  
60  
MHz  
Degrees  
NOISE PERFORMANCE  
Voltage Noise  
Voltage Noise Density  
Current Noise Density  
eN p-p  
eN  
iN  
f = 0.1 Hz to 10 Hz  
f = 1 kHz  
f = 1 kHz  
4.2  
27.5  
0.5  
µV p-p  
nV/√Hz  
fA/√Hz  
Rev. B | Page 4 of 16  
AD8641/AD8642/AD8643  
ABSOLUTE MAXIMUM RATINGS  
Table 3.1  
Parameter  
Rating  
Table 4.  
Supply Voltage  
27.3 V  
2
Package Type  
5-Lead SC70 (KS)  
8-Lead SOIC (R)  
8-Lead MSOP (RM)  
14-Lead SOIC (R)  
16-Lead LFCSP (CP)  
θJA  
θJC  
Unit  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Input Voltage  
VS– to VS+  
Supply Voltage  
Indefinite  
331.4  
157  
206  
120  
44  
223.9  
56  
44  
36  
31.5  
Differential Input Voltage  
Output Short-Circuit Duration  
Storage Temperature Range  
KS-5, R-8, RM-8, R-14, CP-16 Packages  
Operating Temperature Range  
Junction Temperature Range  
KS-5, R-8, RM-8, R-14, CP-16 Packages  
Lead Temperature Range (Soldering, 60 sec)  
–65°C to +150°C  
–40°C to +125°C  
1 Absolute maximum ratings apply at 25°C, unless otherwise noted.  
2 θJA is specified for the worst-case conditions, that is, θJA is specified for  
devices soldered on circuit boards for surface-mounted packages.  
–65°C to +150°C  
300°C  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those listed in the operational sections  
of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on  
the human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. B | Page 5 of 16  
 
 
AD8641/AD8642/AD8643  
TYPICAL PERFORMANCE CHARACTERISTICS  
20  
18  
16  
14  
12  
10  
8
80  
V
= 5V  
= 1.5V  
V
= ±13V  
SY  
SY  
V
CM  
70  
60  
50  
40  
30  
20  
6
4
10  
0
2
0
T
V
(µV/°C)  
V
(mV)  
C
OS  
OS  
Figure 7. Input Offset Voltage  
Figure 10. Offset Voltage Drift  
16  
14  
12  
10  
8
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
V
= ±13V  
SY  
V
= ±13V  
= 25°C  
SY  
T
A
6
4
2
0
–0.5  
–15 –13 –11 –9 –7 –5 –3 –1  
1
3
5
7
9
11 13 15  
OFFSET VOLTAGE (µV/°C)  
V
(V)  
CM  
Figure 8. Offset Voltage Drift  
Figure 11. Input Bias Current vs. VCM  
70  
60  
50  
40  
30  
20  
10  
0
0.5  
0.4  
V
= ±2.5V  
SY  
V
= ±13V  
= 25°C  
SY  
T
A
0.3  
0.2  
0.1  
0
0.1  
0.2  
0.3  
0.4  
0.5  
–15.0 –12.5 –10.0 –7.5 –5.0 –2.5  
0
2.5  
5.0  
7.5 10.0 12.5 15.0  
V
(mV)  
V
(V)  
OS  
CM  
Figure 9. Input Offset Voltage  
Figure 12. Input Bias Current vs. VCM  
Rev. B | Page 6 of 16  
 
AD8641/AD8642/AD8643  
1000  
100  
10  
500  
400  
V
= 5V  
V
=
±13V  
SY  
SY  
300  
200  
100  
0
–100  
–200  
–300  
–400  
–500  
1
0.1  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1.0  
1.5  
(V)  
2.0  
2.5  
TEMPERATURE (°C)  
V
CM  
Figure 13. Input Bias Current vs. Temperature  
Figure 16. Input Offset Voltage vs. VCM  
10M  
1M  
1.0  
0.8  
V
= +5V OR ±5V  
SY  
0.6  
0.4  
0.2  
V
= ±13V  
SY  
0
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
100k  
V
= ±2.5V  
SY  
10k  
0.1  
–5  
–4  
–3  
–2  
–1  
0
1
2
3
4
5
1
10  
100  
V
(V)  
LOAD RESISTANCE (k)  
CM  
Figure 17. Open-Loop Gain vs. Load Resistance  
Figure 14. Input Bias Current vs. VCM  
1000  
100  
10  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
= ±13V  
SY  
A
B
C
D
E
A. V = ±13V, V = ±11V, R = 10kΩ  
SY  
O
L
B. V = ±13V, V = ±11V, R = 2kΩ  
SY  
O
L
C. V = +5V, V = +0.5V/+4.5V, R = 10kΩ  
SY  
O
L
D. V = +5V, V = +0.5V/+4.5V, R = 2kΩ  
SY  
O
L
E. V = +5V, V = +0.5V/+4.5V, R = 600Ω  
SY  
O
L
–100  
1
–15 –13 –11 –9 –7 –5 –3 –1 0  
1
3
5
7
9
11 13 15  
–50 –30 –10  
10  
30  
50  
70  
90  
110 130 150  
TEMPERATURE (°C)  
V
(V)  
CM  
Figure 15. Input Offset Voltage vs. VCM  
Figure 18. Open-Loop Gain vs. Temperature  
Rev. B | Page 7 of 16  
AD8641/AD8642/AD8643  
10000  
1000  
100  
10  
600  
V
=
±13V  
V
= ±13V  
SY  
SY  
500  
400  
V
– V  
OH  
SY  
300  
200  
100  
0
100kΩ  
V
– V  
SY OL  
–100  
–200  
–300  
–400  
–500  
–600  
10k1kΩ  
1
0.001  
0.01  
0.1  
1
10  
100  
–15  
–10  
–5  
0
5
10  
15  
LOAD CURRENT (mA)  
OUTPUT VOLTAGE (V)  
Figure 22. Output Saturation Voltage vs. Load Current  
Figure 19. Input Error Voltage vs. Output Voltage for Resistive Loads  
10000  
1000  
100  
10  
250  
V
= 5V  
V
= ±5V  
SY  
SY  
200  
150  
POS RAIL  
V
– V  
OH  
SY  
R
R
= 1kΩ  
= 2kΩ  
100  
L
50  
L
V
OL  
0
R = 10kΩ  
L
R
= 100kΩ  
L
–50  
–100  
–150  
–200  
–250  
–300  
–350  
R = 1kΩ  
L
R
= 100kΩ  
L
R
= 10kΩ  
L
NEG RAIL  
R
= 2kΩ  
L
1
0.001  
0.01  
0.1  
1
10  
100  
0
50  
100  
150  
200  
250  
300  
350  
LOAD CURRENT (mA)  
OUTPUT VOLTAGE FROM SUPPLY RAIL (mV)  
Figure 23. Output Saturation Voltage vs. Load Current  
Figure 20. Input Error Voltage vs. Output Voltage  
Within 300 mV of Supply Rails  
800  
700  
600  
500  
400  
300  
200  
100  
0
70  
60  
315  
V
R
C
=
= 2k  
= 40pF  
±
13V  
SY  
270  
225  
180  
135  
90  
L
L
50  
40  
GAIN  
30  
20  
PHASE  
10  
45  
+25°C  
+125°C  
0
0
–10  
–20  
–30  
–45  
–90  
–135  
–55°C  
10k  
100k  
1M  
FREQUENCY (Hz)  
10M  
4
8
12  
16  
(V)  
20  
24  
28  
V
SY  
Figure 24. Open-Loop Gain and Phase Margin vs. Frequency  
Figure 21. Quiescent Current vs. Supply Voltage at Different Temperatures  
Rev. B | Page 8 of 16  
AD8641/AD8642/AD8643  
70  
60  
140  
120  
100  
80  
315  
270  
225  
180  
135  
90  
V
SY  
= ±13V  
V
R
C
= 5V  
SY  
= 2k  
L
L
= 40pF  
50  
40  
GAIN  
30  
60  
20  
40  
PHASE  
10  
20  
45  
0
0
0
–10  
–20  
–30  
–45  
–90  
–135  
–20  
–40  
–60  
10k  
100k  
1M  
FREQUENCY (Hz)  
10M  
1k  
10k  
100k  
1M  
10M  
FREQUENCY (Hz)  
Figure 25. Open-Loop Gain and Phase Margin vs. Frequency  
Figure 28. CMRR vs. Frequency  
140  
120  
100  
80  
70  
60  
V
= 5V  
SY  
V
R
C
=
= 2k  
±
13V  
SY  
L
L
= 40pF  
G = +100  
G = +10  
G = +1  
50  
40  
60  
30  
40  
20  
20  
10  
0
0
–20  
–40  
–60  
–10  
–20  
–30  
1k  
10k  
100k  
1M  
10M  
1k  
10k  
100k  
1M  
10M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 26. Closed-Loop Gain vs. Frequency  
Figure 29. CMRR vs. Frequency  
70  
60  
140  
120  
100  
80  
V
= ±13V  
SY  
V
R
C
= 5V  
SY  
= 2kΩ  
L
L
= 40pF  
50  
+PSRR  
40  
G = +100  
G = +10  
G = +1  
30  
60  
20  
–PSRR  
40  
10  
20  
0
0
–10  
–20  
–30  
–20  
–40  
–60  
1k  
10k  
100k  
1M  
10M  
1k  
10k  
100k  
1M  
10M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 27. Closed-Loop Gain vs. Frequency  
Figure 30. PSRR vs. Frequency  
Rev. B | Page 9 of 16  
AD8641/AD8642/AD8643  
140  
1.0  
0.8  
T
V
= ±13V  
V
= 5V  
SY  
SY  
120  
100  
80  
0.6  
1
+PSRR  
V
IN  
0.4  
60  
0.2  
40  
0
–PSRR  
20  
–0.2  
–0.4  
0
2
–20  
–40  
–60  
–0.6  
V
OUT  
–0.8  
–1.0  
1k  
10k  
100k  
FREQUENCY (Hz)  
1M  
10M  
CH1 140.0V 3CH2120.0V–1  
0M400  
T
µ
1s  
2
A 3CH1 41.00V5  
0.00000s  
V
(V)  
CM  
Figure 31. PSRR vs. Frequency  
Figure 34. No Phase Reversal  
15  
10  
5
1000  
100  
10  
V
= ±13V  
V
= ±13V  
SY  
S
GAIN = +5  
G = +100  
TS + (1%)  
TS + (0.1%)  
0
G = +10  
1
–5  
–10  
–15  
G = +1  
TS – (0.1%)  
0.1  
TS – (1%)  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
1k  
10k  
100k  
1M  
10M  
100M  
FREQUENCY (Hz)  
SETTLING TIME (µs)  
Figure 32. Output Impedance vs. Frequency  
Figure 35. Output Swing and Error vs. Settling Time  
1000  
100  
10  
70  
60  
50  
40  
30  
20  
10  
0
V
=
5V  
SY  
V
R
V
A
=
±
13V  
S
= 10k  
= 100mV p-p  
= +1  
L
G = +100  
IN  
V
G = +10  
OS–  
1
G = +1  
OS+  
0.1  
0.01  
1k  
10k  
100k  
1M  
10M  
100M  
1
10  
100  
1000  
FREQUENCY (Hz)  
CAPACITANCE (pF)  
Figure 33. Output Impedance vs. Frequency  
Figure 36. Small Signal Overshoot vs. Load Capacitance  
Rev. B | Page 10 of 16  
AD8641/AD8642/AD8643  
70  
60  
50  
40  
30  
20  
10  
0
1k  
100  
10  
V
= ±13V  
SY  
V
R
V
A
=
±
2.5V  
S
= 10k  
= 100mV p-p  
= +1  
L
IN  
V
OS–  
OS+  
1
1
10  
100  
1000  
10  
100  
1k  
10k  
CAPACITANCE (pF)  
FREQUENCY (Hz)  
Figure 37. Small Signal Overshoot vs. Load Capacitance  
Figure 40. Voltage Noise Density  
1k  
100  
10  
1.0  
0.8  
0.6  
0.4  
0.2  
V
= 5V  
V
= ±13V  
G = +1M  
SY  
S
CH1 p-p = 4.26V  
1
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
1
10  
100  
1k  
10k  
CH1 14.00V –3  
–2  
–1  
0M1.00s1  
(V)  
2
A C3H1  
4–20.0V5  
V
FREQUENCY (Hz)  
CM  
Figure 38. 0.1 Hz to 10 Hz Noise  
Figure 41. Voltage Noise Density  
0.004  
0.001  
1.0  
0.8  
0.6  
0.4  
0.2  
V
= ±2.5V  
V
= ±13V  
S
SY  
8V p-p INPUT  
G = +1M  
CH1 p-p = 4.06V  
LOAD = 100kΩ  
GAIN = +1  
1V p-p INPUT  
2V p-p INPUT  
0.0001  
1
4V p-p INPUT  
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
0.00001  
0.000001  
1
100  
1k  
FREQUENCY (Hz)  
10k 20k  
CH1 14.00V –3  
–2  
–1  
0M1.00s1  
(V)  
2
A C3H1  
4–20.0V5  
V
Figure 42. Total Harmonic Distortion + Noise vs. Frequency  
Figure 39. 0.1 Hz to 10 Hz Noise  
Rev. B | Page 11 of 16  
AD8641/AD8642/AD8643  
–40  
20k  
–50  
2kΩ  
+
+
–60  
–70  
2kΩ  
2kΩ  
V
IN  
–80  
–90  
V
= 18V p-p  
IN  
–100  
–110  
–120  
–130  
–140  
–150  
–160  
V
= 4.5V p-p  
IN  
V
= 9V p-p  
100  
IN  
20  
1k  
10k  
100k  
FREQUENCY (Hz)  
Figure 43. Channel Separation  
Rev. B | Page 12 of 16  
AD8641/AD8642/AD8643  
OUTLINE DIMENSIONS  
2.20  
2.00  
1.80  
3.00  
BSC  
8
1
5
4
1.35  
1.25  
1.15  
2.40  
2.10  
1.80  
5
1
4
3
4.90  
BSC  
3.00  
BSC  
2
PIN 1  
1.00  
0.90  
0.70  
0.65 BSC  
PIN 1  
0.40  
0.10  
0.65 BSC  
1.10  
0.80  
1.10 MAX  
0.15  
0.00  
0.30  
0.10  
0.80  
0.60  
0.40  
0.30  
0.15  
0.22  
0.08  
0.10 M  
AX  
8°  
0°  
0.38  
0.22  
0.23  
0.08  
SEATING  
PLANE  
0.10 COPLANARITY  
COPLANARITY  
0.10  
SEATING  
PLANE  
COMPLIANT TO JEDEC STANDARDS MO-203AA  
COMPLIANT TO JEDEC STANDARDS MO-187-AA  
Figure 44. 5-Lead Thin Shrink Small Outline Transistor Package [SC70]  
Figure 46. 8-Lead Mini Small Outline Package [MSOP]  
(RM-8)  
(KS-5)  
Dimensions shown in millimeters  
Dimensions shown in millimeters  
5.00 (0.1968)  
4.80 (0.1890)  
8.75 (0.3445)  
8.55 (0.3366)  
8
1
5
4
6.20 (0.2440)  
5.80 (0.2284)  
14  
1
8
7
4.00 (0.1574)  
3.80 (0.1497)  
4.00 (0.1575)  
3.80 (0.1496)  
6.20 (0.2441)  
5.80 (0.2283)  
1.27 (0.0500)  
BSC  
0.50 (0.0196)  
0.25 (0.0099)  
1.27 (0.0500)  
BSC  
0.50 (0.0197)  
0.25 (0.0098)  
× 45°  
1.75 (0.0689)  
1.35 (0.0531)  
× 45°  
1.75 (0.0688)  
1.35 (0.0532)  
0.25 (0.0098)  
0.10 (0.0039)  
0.25 (0.0098)  
0.10 (0.0040)  
8°  
0°  
8°  
0.51 (0.0201)  
0.31 (0.0122)  
0.51 (0.0201)  
0.31 (0.0122)  
SEATING  
PLANE  
1.27 (0.0500)  
0.40 (0.0157)  
COPLANARITY  
0.10  
0° 1.27 (0.0500)  
0.25 (0.0098)  
0.17 (0.0067)  
COPLANARITY  
0.10  
0.25 (0.0098)  
0.17 (0.0067)  
SEATING  
PLANE  
0.40 (0.0157)  
COMPLIANT TO JEDEC STANDARDS MS-012-AA  
COMPLIANT TO JEDEC STANDARDS MS-012-AB  
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS  
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR  
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN  
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS  
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR  
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN  
Figure 45. 8-Lead Standard Small Outline Package [SOIC_N]  
(R-8)  
Figure 47. 14-Lead Standard Small Outline Package [SOIC_N]  
(R-14)  
Dimensions shown in millimeters and (inches)  
Dimensions shown in millimeters and (inches)  
Rev. B | Page 13 of 16  
 
AD8641/AD8642/AD8643  
0.50  
0.40  
0.30  
3.00  
BSC SQ  
0.60 MAX  
PIN 1  
INDICATOR  
*
1.65  
13  
12  
16  
1
0.45  
1.50 SQ  
1.35  
PIN 1  
INDICATOR  
2.75  
BSC SQ  
TOP  
VIEW  
EXPOSED  
PAD  
(BOTTOM VIEW)  
4
9
8
5
0.50  
BSC  
0.25 MIN  
1.50 REF  
0.80 MAX  
12° MAX  
0.65 TYP  
0.90  
0.85  
0.80  
0.05 MAX  
0.02 NOM  
SEATING  
PLANE  
0.30  
0.23  
0.18  
0.20 REF  
*
COMPLIANT TO JEDEC STANDARDS MO-220-VEED-2  
EXCEPT FOR EXPOSED PAD DIMENSION.  
Figure 48. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]  
3 mm × 3 mm Body, Very Thin Quad (CP-16-3)  
Dimensions shown in millimeters  
ORDERING GUIDE  
Model  
AD8641AKSZ-R21  
AD8641AKSZ-REEL71  
AD8641AKSZ-REEL1  
AD8641ARZ1  
AD8641ARZ-REEL71  
AD8641ARZ-REEL1  
AD8642ARMZ-R21  
AD8642ARMZ-REEL1  
AD8642ARZ1  
AD8642ARZ-REEL71  
AD8642ARZ-REEL1  
AD8643ARZ1  
Temperature Range  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
–40°C to +125°C  
Package Description  
5-Lead SC70  
5-Lead SC70  
Package Option  
KS-5  
KS-5  
KS-5  
R-8  
R-8  
R-8  
RM-8  
RM-8  
R-8  
Branding  
A07  
A07  
5-Lead SC70  
A07  
8-lead SOIC_N  
8-lead SOIC_N  
8-lead SOIC_N  
8-lead MSOP  
A0A  
A0A  
8-lead MSOP  
8-lead SOIC_N  
8-lead SOIC_N  
8-lead SOIC_N  
14-lead SOIC_N  
14-lead SOIC_N  
14-lead SOIC_N  
16-Lead LFCSP_VQ  
16-Lead LFCSP_VQ  
16-Lead LFCSP_VQ  
R-8  
R-8  
R-14  
R-14  
AD8643ARZ-REEL71  
AD8643ARZ-REEL1  
AD8643ACPZ-R21  
AD8643ACPZ-REEL71  
AD8643ACPZ-REEL1  
R-14  
CP-16-3  
CP-16-3  
CP-16-3  
AUA  
AUA  
AUA  
1 Z = Pb-free part.  
Rev. B | Page 14 of 16  
 
 
 
AD8641/AD8642/AD8643  
NOTES  
Rev. B | Page 15 of 16  
AD8641/AD8642/AD8643  
NOTES  
©2005 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D05072–0–4/05(B)  
Rev. B | Page 16 of 16  

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