AD8654AR [ADI]
IC QUAD OP-AMP, 300 uV OFFSET-MAX, 50 MHz BAND WIDTH, PDSO14, SOIC-14, Operational Amplifier;
| 型号： | AD8654AR |
| 厂家： | 
ADI |
| 描述： | IC QUAD OP-AMP, 300 uV OFFSET-MAX, 50 MHz BAND WIDTH, PDSO14, SOIC-14, Operational Amplifier 放大器 光电二极管 |
| 文件： | 总5页 (文件大小：649K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY TECHNICAL DATA
50 MHz, Precision, Low Distortion,
Low Noise CMOS Amplifiers
Preliminary Technical Data
AD8651/8652/8654
PIN CONFIGURATIONS
FEATURES
8-Lead MSOP
(RM-8)
8-Lead SO
(R-8)
Single Supply Operation: 2.7 V to 5.5 V
Space-Saving MSOP and TSSOP Packaging
Bandw idth: 50 MHz @ 5 V
Offset Voltage: 100uV typ
41 V/us Slew Rate
AD8652
AD8651
Rail-to-Rail Input and Output Sw ing
Input Bias Current: 1 pA
Supply Current: 8 m A/op am p
APPLICATIONS
8-Lead SO
(R-8)
14-Lead TSSOP
(RU-14)
Optical Com m unications
Laser Source Drivers / Controllers
Broadband Com m unications
High speed ADC and DAC
Microw ave link interface
Cellphone PA control
AD8651
AD8654
Video line driver
GENERAL D ESCRIP TIO N
The AD8651/52 /54 are high precision low noise low
Distortion Rail-to-Rail CMOS operational amplifiers
running at single supply voltage from 2.7V to 5V.
14-Lead SO
(R-14)
The single and dual amplifiers are offered in both the 8-
Lead MSOP and 8-Lead SOIC packages. The AD8654
quad amplifier is offered in the 14-Lead TSSOP and 14-
Lead SOIC package.
AD8654
The AD8651/2/4 features high speed, high bandwidth, low
noise and high precision. They are rail-to-rail output
amplifiers with a gain bandwidth of 38 MHz and typical
voltage offset of 150uV from a 5V supply. It also features
low noise of 5nV per square root Hertz.
T he AD8651/2/4 can be used in communication areas,
such as cell phone transmission power control, fiber optics
networking, wireless networking and video line drivers.
The AD8651/AD8652/AD8654 are specified over the
extended industrial (-40°C to +125C°) temperature range.
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its use,
nor for any infringements of patents or other rights of third parties, which may
result from its use. No license is granted by implication or otherwise under any
patent or patent rights of Analog Devices.
One Technology Way, PO Box 9106, Norwood, MA 02062-9106, USA
Tel: 781/329-4700
Fax: 781/326-8703
www.analog.com
© Analog Devices, Inc., 2002
REV. PrA 10/25/02
PRELIMINARY TECHNICAL DATA
AD8651/8652/8654
ELECTRICAL CHARACTERISTICS (V =+2.7V, V =+0V, V = V /2, T =+25°C unless otherwise specified.)
+
-
CM
+
A
P aram eter
Sym bol Conditions
Min
Typ
Max Units
INPUT CHARACTERISTICS
Offset Voltage
VOS
100
300
tbd
tbd
uV
uV
uV
-40°C £ TA £ +85°C
-40°C £ TA £ +125°C
Offset Voltage Drift
Input Bias Current
4
1
uV/oC
pA
IB
10
-40°C £ TA £ +85°C
-40°C £ TA £ +125°C
Input Offset Current
IOS
1
20
pA
-40°C £ TA £ +85°C
-40°C £ TA £ +125°C
Input Voltage Range
VCM
0
V
+
V
Common-Mode Rejection Ratio
CMRR
V = 2.7V 0V<VCM <2.7V
75
90
dB
dB
dB
+
,
-40°C £ TA £ +85°C
-40°C £ TA £ +125°C
70
70
V = 2.7V 0V<VCM <2.7V
66
85
+
,
Large Signal Voltage Gain
AVO
RL = 10 kW , 50mV<Vo<2.65V
RL = 1 kW, 200mV<Vo<2.5V
100
100
120
dB
dB
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
VOL
ISC
IL = 250uA
IL = 250uA
Sourcing
2.68
V
Output Voltage Low
Short Circuit Limit
20
mV
mA
80
-40°C £ TA £ +125°C
Sinking
-40°C £ TA £ +125°C
mA
mA
mA
mA
Output Current
IO
+40
Capacitive Load Drive
Cload
See Performance Curve
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7V to 5.5V, VCM=0V
-40°C £ TA £ +125°C
IO = 0
76
75
85
8
dB
dB
Supply Current/Amplifier
10
12
mA
mA
-40°C £ TA £ +125°C
DYNAMIC PERFORMANCE
Slew Rate
SR
G=1, RL =10 kW, CL=100pF,
G=1, CL=100pF
G=±1, 2V Step
41
50
0.2
V/µs
MHz
uS
Gain Bandwidth Product
Setting Time, 0.1%
GBP
Overload Recovery Time
VIN · G =V
+
0.1
uS
%
G = 1, RL =600 W,
Total Harmonic Distortion + Noise
NOISE PERFORMANCE
Voltage Noise Density
THD+N
en
f = 1 kHz
0.0006
nV/ÖHz
nV/ÖHz
fA/ÖHz
f = 10 kHz
f = 100 kHz
f=10 KHz
7
5.6
4
Current Noise Density
i
n
–2–
REV. PrA
PRELIMINARY TECHNICAL DATA
AD8651/8652/8654
ELECTRICAL CHARACTERISTICS (V =+5V, V =+0V, V = V /2, T =+25°C unless otherwise specified.)
+
-
CM
+
A
P aram eter
Sym bol Conditions
Min
Typ
Max Units
INPUT CHARACTERISTICS
Offset Voltage
VOS
100
300
tbd
tbd
uV
uV
uV
-40°C £ TA £ +85°C
-40°C £ TA £ +125°C
Offset Voltage Drift
Input Bias Current
4
1
uV/oC
pA
IB
10
-40°C £ TA £ +85°C
-40°C £ TA £ +125°C
Input Offset Current
IOS
1
20
pA
-40°C £ TA £ +85°C
-40°C £ TA £ +125°C
Input Voltage Range
VCM
0
V
+
V
Common-Mode Rejection Ratio
CMRR
V =5V 0V<VCM <5V
75
90
dB
dB
dB
+
,
-40°C £ TA £ +85°C
-40°C £ TA £ +125°C
70
70
V = 5V 0V<VCM <5V
66
85
+
,
Large Signal Voltage Gain
AVO
RL = 10 kW , 50mV<Vo<4.95V
RL = 1 kW, 200mV<Vo<4.8V
100
100
120
dB
dB
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
VOL
ISC
IL = 250uA
IL = 250uA
Sourcing
4.98
V
Output Voltage Low
Short Circuit Limit
20
mV
mA
80
-40°C £ TA £ +125°C
Sinking
-40°C £ TA £ +125°C
mA
mA
mA
mA
Output Current
IO
+40
Capacitive Load Drive
Cload
See Performance Curve
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
ISY
VS = 2.7V to 5.5V, VCM=0V
-40°C £ TA £ +125°C
IO = 0
76
75
85
8
dB
dB
Supply Current/Amplifier
10
12
mA
mA
-40°C £ TA £ +125°C
DYNAMIC PERFORMANCE
Slew Rate
SR
G=1, RL =10 kW, CL=100pF,
G=1, CL=100pF
G=±1, 2V Step
41
50
0.2
V/µs
MHz
uS
Gain Bandwidth Product
Setting Time, 0.1%
GBP
Overload Recovery Time
VIN · G =V
+
0.1
uS
%
G = 1, RL =600 W,
Total Harmonic Distortion + Noise
NOISE PERFORMANCE
Voltage Noise Density
THD+N
en
f = 1 kHz
0.0006
nV/ÖHz
nV/ÖHz
fA/ÖHz
f = 10 kHz
f = 100 kHz
f=10 KHz
7
5.6
4
Current Noise Density
i
n
REV. PrA
–3–
PRELIMINARY TECHNICAL DATA
AD8651/8652/8654
ABSO LUTE MAXIMUM RATINGS1
Package Type
q
q
JC
JA
Units
Supply Voltage ...........................................................+5.5V
Input Voltage ......................................... GND to Vs + 0.3V
8-Pin MSOP (RM)
8-Pin SOIC (R)
210
158
45
43
°C/W
°C/W
Differential Input Voltage1 ........................................ ±5.5V
Output Short-Circuit Duration to Gnd..................Indefinite
Storage T emperature Range
N, R Package...................................... -65°C to +150°C
Operating Temperature Range
14-Pin T SSOP (RU)
14-Pin SOIC (R)
158
158
43
43
°C/W
°C/W
NOT ES
1
Absolute maximum ratings apply at 25°C, unless otherwise noted.
2
q
is specified for the worst-case conditions, i.e., q is specified for device soldered in
JA
JA
.......................................................... -40°C to +125°C
Junction Temperature Range
circuit board for surface mount packages.
N, R Package...................................... -65°C to +150°C
Lead T emperature Range (Soldering, 10 sec) .......... +300°C
ORDERING GUIDE
Tem perature
Range
P ackage
D escription
P ackage
Branding
Inform ation
B8A
Model
AD8651ARM-Reel
AD8651AR
AD8651AR-Reel
AD8651AR-Reel7
AD8652AR
AD8652AR-Reel
AD8652AR-Reel7
AD8654ARU
O ption
RM-8
R-8
R-8
R-8
R-8
R-8
R-8
RU-14
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
8-Pin MSOP
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
8-Pin SOIC
14-Pin
T SSOP
AD8654ARU-Reel
-40°C to +125°C
14-Pin
RU-14
T SSOP
AD8654AR
AD8654AR-Reel
AD8654AR-Reel7
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
14-Pin SOIC
14-Pin SOIC
14-Pin SOIC
R-14
R-14
R-14
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V
readily accumulate on the human body and test equipment and can discharge without
detection. Although this device features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid performance degradation
or loss of functionality.
–4–
REV. PrA
PRELIMINARY TECHNICAL DATA
AD8651/8652/8654
8-Lead SO
(R-8)
8-Lead mSOIC
(RM-8)
14-Lead TSSOP
(RU-14)
14-Lead SO
(R-14)
REV. PrA
–5–
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