ADF4360-8BCPZ [ADI]

Integrated Synthesizer and VCO;
ADF4360-8BCPZ
型号: ADF4360-8BCPZ
厂家: ADI    ADI
描述:

Integrated Synthesizer and VCO

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Integrated Synthesizer and VCO  
Data Sheet  
ADF4360-8  
FEATURES  
GENERAL DESCRIPTION  
Output frequency range: 65 MHz to 400 MHz  
3.0 V to 3.6 V power supply  
1.8 V logic compatibility  
Integer-N synthesizer  
Programmable output power level  
3-wire serial interface  
The ADF4360-8 is an integrated integer-N synthesizer and  
voltage-controlled oscillator (VCO). The ADF4360-8 center  
frequency is set by external inductors. This allows a frequency  
range of between 65 MHz to 400 MHz.  
Control of all the on-chip registers is through a simple 3-wire  
interface. The device operates with a power supply ranging  
from 3.0 V to 3.6 V and can be powered down when not in use.  
Digital lock detect  
Hardware and software power-down mode  
APPLICATIONS  
System clock generation  
Test equipment  
Wireless LANs  
CATV equipment  
FUNCTIONAL BLOCK DIAGRAM  
AV  
DV  
R
CE  
DD  
DD  
SET  
ADF4360-8  
MUXOUT  
MULTIPLEXER  
14-BIT R  
COUNTER  
REF  
IN  
LOCK  
DETECT  
MUTE  
CLK  
DATA  
LE  
24-BIT  
FUNCTION  
LATCH  
24-BIT  
DATA REGISTER  
CHARGE  
PUMP  
CP  
PHASE  
COMPARATOR  
V
V
VCO  
TUNE  
L1  
L2  
C
C
C
N
RF  
RF  
A
B
OUT  
OUT  
VCO  
CORE  
OUTPUT  
STAGE  
13-BIT B  
COUNTER  
N = B  
AGND  
DGND  
CPGND  
Figure 1.  
Rev. D  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no re-  
sponsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Technical Support  
©2004-2016 Analog Devices, Inc. All rights reserved.  
www.analog.com  
 
 
 
 
ADF4360-8  
Data Sheet  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
MUXOUT and Lock Detect...................................................... 10  
Input Shift Register .................................................................... 11  
VCO ............................................................................................. 11  
Output Stage................................................................................ 12  
Latch Structure ........................................................................... 13  
Power-Up..................................................................................... 17  
Control Latch.............................................................................. 19  
N Counter Latch......................................................................... 20  
R Counter Latch ......................................................................... 20  
Applications Information.............................................................. 21  
Choosing the Correct Inductance Value................................. 21  
Fixed Frequency LO................................................................... 21  
Interfacing ................................................................................... 22  
PCB Design Guidelines for Chip Scale Package........................... 22  
Output Matching........................................................................ 23  
Outline Dimensions....................................................................... 24  
Ordering Guide .......................................................................... 24  
Applications....................................................................................... 1  
General Description......................................................................... 1  
Functional Block Diagram .............................................................. 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
Timing Characteristics ................................................................ 5  
Absolute Maximum Ratings............................................................ 6  
Transistor Count........................................................................... 6  
ESD Caution.................................................................................. 6  
Pin Configuration and Function Descriptions............................. 7  
Typical Performance Characteristics ............................................. 8  
Circuit Description......................................................................... 10  
Reference Input Section............................................................. 10  
N Counter.................................................................................... 10  
R Counter .................................................................................... 10  
PFD and Charge Pump.............................................................. 10  
REVISION HISTORY  
Updated Outline Dimensions....................................................... 24  
Changes to Ordering Guide.......................................................... 24  
5/2016—Rev. C to Rev. D  
Changed ADF4360 Family to ADF4360-8 and  
ADSP-21xx to ADSP-2181 ........................................... Throughout  
Changes to Figure 3.......................................................................... 7  
Updated Outline Dimensions ....................................................... 25  
Changes to Ordering Guide .......................................................... 25  
01/2005—Rev. 0 to Rev. A  
Changes to Table 1.............................................................................3  
Changes to Table 2.............................................................................5  
Changes to Figure 20...................................................................... 12  
Added Power-Up Section.............................................................. 17  
Deleted Power-Up Section ............................................................ 22  
Updated Outline Dimensions....................................................... 24  
Changes to Ordering Guide.......................................................... 24  
11/2012—Rev. B to Rev. C  
Changes to Table 1............................................................................ 4  
Changes to Table 3 ............................................................................ 6  
Updated Outline Dimensions ....................................................... 24  
10/2004—Revision 0: Initial Version  
2/2012—Rev. A to Rev. B  
Changes to Figure 3 and Table 4 ..................................................... 7  
Changes to Output Matching Section.......................................... 23  
Rev. D | Page 2 of 24  
 
 
Data Sheet  
ADF4360-8  
SPECIFICATIONS1  
AVDD = DVDD = VVCO = 3.3 V 10%; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted.  
Table 1.  
Parameter  
B Version  
Unit  
Test Conditions/Comments  
REFIN CHARACTERISTICS  
REFIN Input Frequency  
10/250  
MHz min/max  
For f < 10 MHz, use a dc-coupled CMOS-compatible square wave, slew  
rate > 21 V/µs.  
REFIN Input Sensitivity  
0.7/AVDD  
0 to AVDD  
5.0  
V p-p min/max AC-coupled.  
V max  
CMOS-compatible.  
REFIN Input Capacitance  
REFIN Input Current  
PHASE DETECTOR  
Phase Detector Frequency2  
CHARGE PUMP  
pF max  
µA max  
±±0  
8
MHz max  
ICP Sink/Source3  
With RSET = 4.7 kΩ.  
High Value  
Low Value  
RSET Range  
ICP Three-State Leakage  
Current  
2.5  
mA typ  
mA typ  
kΩ  
0.312  
2.7/10  
0.2  
nA typ  
Sink and Source Current  
Matching  
2
% typ  
1.25 V ≤ VCP ≤ 2.5 V.  
ICP vs. VCP  
ICP vs. Temperature  
LOGIC INPUTS  
1.5  
2
% typ  
% typ  
1.25 V ≤ VCP ≤ 2.5 V.  
VCP = 2.0 V.  
VINH, Input High Voltage  
VINL, Input Low Voltage  
IINH/IINL, Input Current  
CIN, Input Capacitance  
LOGIC OUTPUTS  
VOH, Output High Voltage  
IOH, Output High Current  
VOL, Output Low Voltage  
POWER SUPPLIES  
AVDD  
1.5  
0.±  
±1  
3.0  
V min  
V max  
µA max  
pF max  
DVDD − 0.4  
500  
0.4  
V min  
µA max  
V max  
CMOS output chosen.  
IOL = 500 µA.  
3.0/3.±  
AVDD  
AVDD  
5
V min/V max  
DVDD  
VVCO  
4
AIDD  
mA typ  
mA typ  
mA typ  
mA typ  
µA typ  
4
DIDD  
2.5  
4, 5  
IVCO  
12.0  
3.5 to 11.0  
7
ICORE = 5 mA.  
RF output stage is programmable.  
4
IRFOUT  
Low Power Sleep Mode4  
RF OUTPUT CHARACTERISTICS5  
Maximum VCO Output Frequency  
400  
MHz  
ICORE = 5 mA. Depending on L. See the  
Choosing the Correct Inductance Value section.  
Minimum VCO Output Frequency ±5  
MHz  
VCO Output Frequency  
88/108  
MHz min/max  
L1, L2 = 270 nH. See the Choosing the Correct Inductance Value  
section for other frequency values.  
VCO Frequency Range  
VCO Sensitivity  
1.2  
2
Ratio  
MHz/V typ  
FMAX/FMIN  
L1, L2 = 270 nH. See the Choosing the Correct Inductance Value  
section for other sensitivity values.  
To within 10 Hz of final frequency.  
Lock Time±  
400  
µs typ  
Frequency Pushing (Open Loop)  
0.24  
MHz/V typ  
Rev. D | Page 3 of 24  
ADF4360-8  
Data Sheet  
Parameter  
B Version  
10  
−1±  
−21  
−9/0  
−14/−9  
±3  
1.25/2.5  
Unit  
Test Conditions/Comments  
Frequency Pulling (Open Loop)  
Harmonic Content (Second)  
Harmonic Content (Third)  
Output Power5, 7  
Output Power5, 8  
Output Power Variation  
VCO Tuning Range  
Hz typ  
Into 2.00 VSWR load.  
dBc typ  
dBc typ  
dBm typ  
dBm typ  
dB typ  
Using tuned load, programmable in 3 dB steps; see Table 7.  
Using 50 Ω resistors to VVCO, programmable in 3 dB steps; see Table 7.  
V min/max  
NOISE CHARACTERISTICS5  
VCO Phase Noise Performance9  
−120  
−139  
−140  
−142  
−1±0  
−150  
−142  
−215  
−102  
0.09  
dBc/Hz typ  
dBc/Hz typ  
dBc/Hz typ  
dBc/Hz typ  
dBc/Hz typ  
dBc/Hz typ  
dBc/Hz typ  
dBc/Hz typ  
dBc/Hz typ  
Degrees typ  
dBc typ  
At 100 kHz offset from carrier.  
At 800 kHz offset from carrier.  
At 3 MHz offset from carrier.  
At 10 MHz offset from carrier.  
At 200 kHz PFD frequency.  
At 1 MHz PFD frequency.  
Synthesizer Phase Noise Floor10  
At 8 MHz PFD frequency.  
Phase Noise Figure of Merit10  
In-Band Phase Noise11, 12  
RMS Integrated Phase Error13  
Spurious Signals due to PFD  
Frequency12, 14  
At 1 kHz offset from carrier.  
100 Hz to 100 kHz.  
−75  
Level of Unlocked Signal with  
MTLD Enabled  
−70  
dBm typ  
1 Operating temperature range is –40°C to +85°C.  
2 Guaranteed by design. Sample tested to ensure compliance.  
3 ICP is internally modified to maintain constant loop gain over the frequency range.  
4 TA = 25°C; AVDD = DVDD = VVCO = 3.3 V.  
5 Unless otherwise stated, these characteristics are guaranteed for VCO core power = 5 mA. L1, L2 = 270 nH, 470 Ω resistors to GND in parallel with L1, L2.  
± Jumping from 88 MHz to 108 MHz. PFD frequency = 200 kHz; loop bandwidth = 10 kHz.  
7 For more detail on using tuned loads, see the Output Matching section.  
8 Using 50 Ω resistors to VVCO, into a 50 Ω load.  
9 The noise of the VCO is measured in open-loop conditions.  
10 The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider value). The  
phase noise figure of merit subtracts 10 log (PFD frequency).  
11 The phase noise is measured with the EV-ADF43±0-8EB1Z evaluation board and the HP 85±2E spectrum analyzer. The spectrum analyzer provides the REFIN for the  
synthesizer; offset frequency = 1 kHz.  
12  
f
f
= 10 MHz; fPFD = 200 kHz; N = 1000; loop bandwidth = 10 kHz.  
= 10 MHz; fPFD = 1 MHz; N = 120; loop bandwidth = 100 kHz.  
REFIN  
13  
REFIN  
14 The spurious signals are measured with the EV-ADF43±0-8EB1Z evaluation board and the HP 85±2E spectrum analyzer. The spectrum analyzer provides the REFIN for  
the synthesizer; fREFOUT = 10 MHz at 0 dBm.  
Rev. D | Page 4 of 24  
Data Sheet  
ADF4360-8  
TIMING CHARACTERISTICS1  
AVDD = DVDD = VVCO = 3.3 V 10%; AGND = DGND = 0 V; 1.8 V and 3 V logic levels used; TA = TMIN to TMAX, unless otherwise noted.  
Table 2.  
Parameter  
Limit at TMIN to TMAX (B Version)  
Unit  
Test Conditions/Comments  
LE setup time  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
20  
10  
10  
25  
25  
10  
20  
ns min  
ns min  
ns min  
ns min  
ns min  
ns min  
ns min  
DATA to CLOCK setup time  
DATA to CLOCK hold time  
CLOCK high duration  
CLOCK low duration  
CLOCK to LE setup time  
LE pulse width  
1 Refer to the Power-Up section for the recommended power-up procedure for this device.  
t4  
t5  
CLOCK  
t2  
t3  
DB1  
(CONTROL BIT C2)  
DB0 (LSB)  
(CONTROL BIT C1)  
DB23 (MSB)  
DB22  
DB2  
DATA  
LE  
t7  
t1  
t6  
LE  
Figure 2. Timing Diagram  
Rev. D | Page 5 of 24  
 
 
ADF4360-8  
Data Sheet  
ABSOLUTE MAXIMUM RATINGS  
TA = 25°C, unless otherwise noted.  
Stresses at or above those listed under Absolute Maximum Rat-  
ings may cause permanent damage to the product. This is a  
stress rating only; functional operation of the product at these  
or any other conditions above those indicated in the operational  
section of this specification is not implied. Operation beyond  
the maximum operating conditions for extended periods may  
affect product reliability.  
Table 3.  
Parameter  
Rating  
AVDD to GND1  
−0.3 V to +3.9 V  
−0.3 V to +0.3 V  
−0.3 V to +3.9 V  
−0.3 V to +0.3 V  
−0.3 V to VDD + 0.3 V  
−0.3 V to VDD + 0.3 V  
−0.3 V to VDD + 0.3 V  
−40°C to + 85°C  
−65°C to +150°C  
150°C  
AVDD to DVDD  
VVCO to GND  
VVCO to AVDD  
This device is a high performance RF integrated circuit with an  
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions  
should be taken for handling and assembly.  
Digital I/O Voltage to GND  
Analog I/O Voltage to GND  
REFIN to GND  
Operating Temperature Range  
Storage Temperature Range  
Maximum Junction Temperature  
CSP θJA Thermal Impedance  
Paddle Soldered  
TRANSISTOR COUNT  
12543 (CMOS) and 700 (Bipolar)  
ESD CAUTION  
50°C/W  
88°C/W  
260°C  
Paddle Not Soldered  
Lead Temperature, Soldering Reflow  
1 GND = AGND = DGND = 0 V.  
Rev. D | Page 6 of 24  
 
 
 
 
Data Sheet  
ADF4360-8  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
PIN 1  
IDENTIFIER  
CPGND 1  
18 DATA  
AV  
2
3
4
17 CLK  
16 REF  
DD  
AGND  
IN  
ADF4360-8  
TOP VIEW  
RF  
A
15  
DGND  
OUT  
RF  
B 5  
6
14 C  
13 R  
OUT  
V
N
VCO  
SET  
NOTES  
1. THE EXPOSED PAD MUST BE CONNECTED  
TO AGND.  
Figure 3. Pin Configuration  
Table 4. Pin Function Descriptions  
Pin No.  
Mnemonic  
CPGND  
AVDD  
Description  
1
2
Charge Pump Ground. This is the ground return path for the charge pump.  
Analog Power Supply. This ranges from 3.0 V to 3.6 V. Decoupling capacitors to the analog ground plane should be  
placed as close as possible to this pin. AVDD must have the same value as DVDD.  
3, 8, 11, 22  
4
AGND  
Analog Ground. This is the ground return path of the prescaler and VCO.  
RFOUT  
RFOUT  
VVCO  
A
VCO Output. The output level is programmable from 0 dBm to 9 dBm. See the Output Matching section for a  
description of the various output stages.  
VCO Complementary Output. The output level is programmable from 0 dBm to −9 dBm. See the Output Matching  
section for a description of the various output stages.  
Power Supply for the VCO. This ranges from 3.0 V to 3.6 V. Decoupling capacitors to the analog ground plane should  
be placed as close as possible to this pin. VVCO must have the same value as AVDD.  
5
6
B
7
9
VTUNE  
L1  
Control Input to the VCO. This voltage determines the output frequency and is derived from filtering the CP output voltage.  
An external inductor to AGND should be connected to this pin to set the ADF4360-8 output frequency. L1 and L2  
need to be the same value. A 470 Ω resistor should be added in parallel to AGND.  
10  
L2  
An external inductor to AGND should be connected to this pin to set the ADF4360-8 output frequency. L1 and L2  
need to be the same value. A 470 Ω resistor should be added in parallel to AGND.  
12  
13  
CC  
RSET  
Internal Compensation Node. This pin must be decoupled to ground with a 10 nF capacitor.  
Connecting a resistor between this pin and CPGND sets the maximum charge pump output current for the synthesizer.  
The nominal voltage potential at the RSET pin is 0.6 V. The relationship between ICP and RSET is  
11.75  
RSET  
ICPmax  
where RSET = 4.7 kΩ, ICPmax = 2.5 mA.  
14  
15  
16  
CN  
DGND  
REFIN  
Internal Compensation Node. This pin must be decoupled to VVCO with a 10 μF capacitor.  
Digital Ground.  
Reference Input. This is a CMOS input with a nominal threshold of VDD/2 and a dc equivalent input resistance of  
100 kΩ (see Figure 16). This input can be driven from a TTL or CMOS crystal oscillator, or it can be ac-coupled.  
17  
18  
19  
CLK  
DATA  
LE  
Serial Clock Input. This serial clock is used to clock in the serial data to the registers. The data is latched into the 24-bit  
shift register on the CLK rising edge. This input is a high impedance CMOS input.  
Serial Data Input. The serial data is loaded MSB first with the two LSBs being the control bits. This input is a high  
impedance CMOS input.  
Load Enable, CMOS Input. When LE goes high, the data stored in the shift registers is loaded into one of the four  
latches, and the relevant latch is selected using the control bits.  
20  
21  
MUXOUT  
DVDD  
This multiplexer output lets either the lock detect, the scaled RF, or the scaled reference frequency be accessed externally.  
Digital Power Supply. This ranges from 3.0 V to 3.6 V. Decoupling capacitors to the digital ground plane should be  
placed as close as possible to this pin. DVDD must have the same value as AVDD.  
23  
24  
CE  
Chip Enable. A logic low on this pin powers down the device and puts the charge pump into three-state mode.  
Taking the pin high powers up the device depending on the status of the power-down bits.  
Charge Pump Output. When enabled, this provides ICP to the external loop filter, which in turn drives the internal VCO.  
Exposed Pad. The exposed pad must be connected to AGND.  
CP  
EP  
Rev. D | Page 7 of 24  
ADF4360-8  
Data Sheet  
TYPICAL PERFORMANCE CHARACTERISTICS  
–40  
0
–10  
–20  
–30  
–40  
–50  
V
= 3.3V, V  
= 3.3V  
VCO  
DD  
= 2.5mA  
–50  
–60  
REFERENCE  
LEVEL = –2.5dBm  
I
CP  
PFD FREQUENCY = 1MHz  
LOOP BANDWIDTH = 100kHz  
RES. BANDWIDTH = 1kHz  
VIDEO BANDWIDTH = 1kHz  
SWEEP = 4.2SECONDS  
AVERAGES = 20  
–70  
–80  
–90  
–100  
–110  
–120  
–130  
–140  
–150  
–60  
–70  
–80  
–90  
–84dBc  
100  
1k  
10k  
100k  
1M  
10M  
–1.1MHz  
–0.55MHz  
65MHz  
0.55MHz  
1.1MHz  
FREQUENCY OFFSET (Hz)  
Figure 4. Open-Loop VCO Phase Noise, L1, L2 = 560 nH  
Figure 7. Reference Spurs at 65 MHz  
(1 MHz Channel Spacing, 100 kHz Loop Bandwidth)  
–70  
–75  
–80  
–85  
–90  
–95  
–100  
–40  
–50  
–60  
–70  
–80  
–105  
–110  
–115  
–120  
–125  
–130  
–135  
–140  
–145  
–150  
–90  
–100  
–110  
–120  
–130  
–140  
–150  
100  
1k  
10k  
100k  
1M  
10M  
100  
1k  
10k  
100k  
1M  
10M  
FREQUENCY OFFSET (Hz)  
FREQUENCY OFFSET (Hz)  
Figure 5. VCO Phase Noise, 65 MHz, 1 MHz PFD, 100 kHz Loop Bandwidth  
Figure 8. Open-Loop VCO Phase Noise, L1, L2 = 110 nH  
0
–70  
V
= 3.3V, V  
= 3.3V  
VCO  
DD  
= 2.5mA  
–75  
–80  
REFERENCE  
LEVEL = –2.5dBm  
–10  
–20  
–30  
–40  
–50  
I
CP  
PFD FREQUENCY = 1MHz  
LOOP BANDWIDTH = 100kHz  
RES. BANDWIDTH = 30Hz  
VIDEO BANDWIDTH = 30Hz  
SWEEP = 1.9SECONDS  
AVERAGES = 20  
–85  
–90  
–95  
–100  
–105  
–110  
–115  
–120  
–125  
–130  
–135  
–140  
–145  
–150  
–60  
–70  
–80  
–90  
–107.4dBc/Hz  
–2kHz  
–1kHz  
65MHz  
1kHz  
2kHz  
100  
1k  
10k  
100k  
1M  
10M  
FREQUENCY OFFSET (Hz)  
Figure 6. Close-In Phase Noise at 65 MHz (1 MHz Channel Spacing)  
Figure 9. VCO Phase Noise, 160 MHz, 1 MHz PFD, 100 kHz Loop Bandwidth  
Rev. D | Page 8 of 24  
 
Data Sheet  
ADF4360-8  
0
–10  
–20  
–30  
–40  
–50  
–70  
–75  
–80  
–85  
–90  
–95  
–100  
V
= 3.3V, V  
= 3.3V  
VCO  
DD  
= 2.5mA  
REFERENCE  
LEVEL = 1dBm  
I
CP  
PFD FREQUENCY = 1MHz  
LOOP BANDWIDTH = 100kHz  
RES. BANDWIDTH = 30Hz  
VIDEO BANDWIDTH = 30Hz  
SWEEP = 1.9SECONDS  
AVERAGES = 20  
–105  
–110  
–115  
–120  
–125  
–130  
–135  
–140  
–145  
–150  
–60  
–70  
–80  
–90  
–109.4dBc/Hz  
–2kHz  
–1kHz  
160MHz  
1kHz  
2kHz  
100  
1k  
10k  
100k  
1M  
10M  
FREQUENCY OFFSET (Hz)  
Figure 13. VCO Phase Noise, 400 MHz, 1 MHz PFD, 100 kHz Loop Bandwidth  
Figure 10. Close-In Phase Noise at 160 MHz (1 MHz Channel Spacing)  
0
0
V
= 3.3V, V  
= 3.3V  
VCO  
DD  
= 2.5mA  
V
= 3.3V, V  
= 3.3V  
VCO  
DD  
= 2.5mA  
REFERENCE  
LEVEL = 0dBm  
–10  
–20  
–30  
–40  
–50  
I
CP  
REFERENCE  
LEVEL = 1dBm  
–10  
–20  
–30  
–40  
–50  
I
CP  
PFD FREQUENCY = 1MHz  
LOOP BANDWIDTH = 100kHz  
RES. BANDWIDTH = 30Hz  
VIDEO BANDWIDTH = 30Hz  
SWEEP = 1.9SECONDS  
AVERAGES = 20  
PFD FREQUENCY = 1MHz  
LOOP BANDWIDTH = 100kHz  
RES. BANDWIDTH = 1kHz  
VIDEO BANDWIDTH = 1kHz  
SWEEP = 4.2SECONDS  
AVERAGES = 20  
–60  
–70  
–80  
–90  
–60  
–70  
–80  
–90  
–76dBc  
–103.4dBc/Hz  
–2kHz  
–1kHz  
400MHz  
1kHz  
2kHz  
–1.1MHz  
–0.55MHz  
160MHz  
0.55MHz  
1.1MHz  
Figure 14. Close-In Phase Noise at 400 MHz (1 MHz Channel Spacing)  
Figure 11. Reference Spurs at 160 MHz  
(1 MHz Channel Spacing, 100 kHz Loop Bandwidth)  
0
–40  
V
= 3.3V, V  
= 3.3V  
VCO  
DD  
= 2.5mA  
–50  
–60  
REFERENCE  
LEVEL = 0dBm  
–10  
–20  
–30  
–40  
–50  
I
CP  
PFD FREQUENCY = 1MHz  
LOOP BANDWIDTH = 100kHz  
RES. BANDWIDTH = 1kHz  
VIDEO BANDWIDTH = 1kHz  
SWEEP = 4.2SECONDS  
AVERAGES = 20  
–70  
–80  
–90  
–100  
–110  
–120  
–130  
–140  
–150  
–60  
–70  
–80  
–90  
–77dBc  
–1.1MHz  
–0.55MHz  
400MHz  
0.55MHz  
1.1MHz  
100  
1k  
10k  
100k  
1M  
10M  
FREQUENCY OFFSET (Hz)  
Figure 12. Open-Loop VCO Phase Noise, L1, L2 = 18 nH  
Figure 15. Reference Spurs at 400 MHz  
(1 MHz Channel Spacing, 100 kHz Loop Bandwidth)  
Rev. D | Page 9 of 24  
ADF4360-8  
Data Sheet  
CIRCUIT DESCRIPTION  
REFERENCE INPUT SECTION  
V
P
CHARGE  
PUMP  
The reference input stage is shown in Figure 16. SW1 and SW2  
are normally closed switches. SW3 is normally open. When  
power-down is initiated, SW3 is closed, and SW1 and SW2 are  
opened. This ensures that there is no loading of the REFIN pin  
on power-down.  
UP  
HI  
D1  
Q1  
U1  
R DIVIDER  
CLR1  
POWER-DOWN  
CONTROL  
PROGRAMMABLE  
DELAY  
CP  
U3  
100k  
SW2  
NC  
ABP1  
ABP2  
TO R COUNTER  
REF  
IN  
NC  
SW1  
BUFFER  
CLR2  
U2  
DOWN  
HI  
D2  
Q2  
SW3  
NO  
N DIVIDER  
Figure 16. Reference Input Stage  
CPGND  
N COUNTER  
R DIVIDER  
N DIVIDER  
CP OUTPUT  
The CMOS N counter allows a wide division ratio in the PLL  
feedback counter. The counters are specified to work when the  
VCO output is 400 MHz or less. To avoid confusion, this is re-  
ferred to as the B counter. It makes it possible to generate output  
frequencies that are spaced only by the reference frequency  
divided by R. The VCO frequency equation is  
Figure 17. PFD Simplified Schematic and Timing (In Lock)  
fVCO B fREFIN /R  
MUXOUT AND LOCK DETECT  
where:  
The output multiplexer on the ADF4360-8 allows the user to  
access various internal points on the chip. The state of MUX-  
OUT is controlled by M3, M2, and M1 in the function latch.  
The full truth table is shown in Table 7. Figure 18 shows the  
MUXOUT section in block diagram form.  
f
VCO is the output frequency of the VCO.  
B is the preset divide ratio of the binary 13-bit counter (3 to 8191).  
REFIN is the external reference frequency oscillator.  
f
R COUNTER  
The 14-bit R counter allows the input reference frequency to be  
divided down to produce the reference clock to the phase fre-  
quency detector (PFD). Division ratios from 1 to 16,383 are  
allowed.  
DV  
DD  
DIGITAL LOCK DETECT  
R COUNTER OUTPUT  
N COUNTER OUTPUT  
MUXOUT  
MUX  
CONTROL  
PFD AND CHARGE PUMP  
The PFD takes inputs from the R counter and N counter  
(N = BP + A) and produces an output proportional to the phase  
and frequency difference between them. Figure 17 is a simpli-  
fied schematic. The PFD includes a programmable delay ele-  
ment that controls the width of the antibacklash pulse. This  
pulse ensures that there is no dead zone in the PFD transfer  
function, and minimizes phase noise and reference spurs. Two  
bits in the R counter latch, ABP2 and ABP1, control the width  
of the pulse (see Table 9).  
DGND  
Figure 18. MUXOUT Circuit  
Rev. D | Page 10 of 24  
 
 
 
 
 
 
 
 
 
Data Sheet  
ADF4360-8  
The correct band is chosen automatically by the band select logic  
at power-up or whenever the N counter latch is updated. It is  
important that the correct write sequence be followed at power-  
up. This sequence is  
Lock Detect  
MUXOUT can be programmed for one type of lock detect. Dig-  
ital lock detect is active high. When LDP in the R counter latch  
is set to 0, digital lock detect is set high when the phase error on  
three consecutive phase detector cycles is less than 15 ns.  
1. R counter latch  
2. Control latch  
3. N counter latch  
With LDP set to 1, five consecutive cycles of less than 15 ns  
phase error are required to set the lock detect. It stays set high  
until a phase error of greater than 25 ns is detected on any  
subsequent PD cycle.  
During band select, which takes five PFD cycles, the VCO VTUNE  
is disconnected from the output of the loop filter and connected  
to an internal reference voltage.  
INPUT SHIFT REGISTER  
3.5  
3.0  
2.5  
2.0  
The digital section of the ADF4360-8 includes a 24-bit input  
shift register, a 14-bit R counter, and an 18-bit N counter  
comprised of a 5-bit A counter and a 13-bit B counter. Data is  
clocked into the 24-bit shift register on each rising edge of CLK.  
The data is clocked in MSB first. Data is transferred from the  
shift register to one of four latches on the rising edge of LE. The  
destination latch is determined by the state of the two control  
bits (C2, C1) in the shift register. The two LSBs, DB1 and DB0,  
are shown in Figure 2.  
1.5  
1.0  
0.5  
0
The truth table for these bits is shown in Table 5. Table 6 shows  
a summary of how the latches are programmed. Note that the  
test modes latch is used for factory testing and should not be  
programmed by the user.  
80  
85  
90  
95  
100  
105  
110  
115  
FREQUENCY (MHz)  
Figure 19. Frequency vs. VTUNE, ADF4360-8, L1 and L2 = 270 nH  
Table 5. C2 and C1 Truth Table  
The R counter output is used as the clock for the band select  
logic and should not exceed 1 MHz. A programmable divider is  
provided at the R counter input to allow division by 1, 2, 4, or 8,  
and is controlled by the BSC1 bit and the BSC2 bit in the R  
counter latch. Where the required PFD frequency exceeds  
1 MHz, the divide ratio should be set to allow enough time for  
correct band selection.  
Control Bits  
C2  
0
0
1
1
C1  
0
1
0
1
Data Latch  
Control Latch  
R Counter  
N Counter (B)  
Test Modes Latch  
VCO  
After band selection, normal PLL action resumes. The value of  
KV is determined by the value of inductors used (see the Choos-  
ing the Correct Inductance Value section). The ADF4360-8  
contains linearization circuitry to minimize any variation of the  
product of ICP and KV.  
The VCO core in the ADF4360-8 uses eight overlapping bands,  
as shown in Figure 19, to allow a wide frequency range to be  
covered without a large VCO sensitivity (KV) and resultant poor  
phase noise and spurious performance.  
The operating current in the VCO core is programmable in four  
steps: 2.5 mA, 5 mA, 7.5 mA, and 10 mA. This is controlled by  
the PC1 bit and the PC2 bit in the control latch.  
Rev. D | Page 11 of 24  
 
 
 
 
ADF4360-8  
Data Sheet  
If the outputs are used individually, the optimum output stage  
consists of a shunt inductor to VDD.  
OUTPUT STAGE  
The RFOUTA and RFOUTB pins of the ADF4360-8 are connected  
to the collectors of an NPN differential pair driven by buffered  
outputs of the VCO, as shown in Figure 20. To allow the user to  
optimize the power dissipation vs. the output power require-  
ments, the tail current of the differential pair is programmable  
via Bits PL1 and PL2 in the control latch. Four current levels  
may be set: 3.5 mA, 5 mA, 7.5 mA, and 11 mA. These levels give  
output power levels of −9 dBm, −6 dBm, −3 dBm, and 0 dBm,  
respectively, using the correct shunt inductor to VDD and ac  
coupling into a 50 Ω load. Alternatively, both outputs can be  
combined in a 1 + 1:1 transformer or a 180° microstrip coupler  
(see the Output Matching section).  
Another feature of the ADF4360-8 is that the supply current  
to the RF output stage is shut down until the device achieves lock,  
as measured by the digital lock detect circuitry. This is enabled by  
the Mute-Till-Lock Detect (MTLD) bit in the control latch.  
RF  
OUT  
A
RF B  
OUT  
VCO  
BUFFER  
Figure 20. Output Stage ADF4360-8  
Rev. D | Page 12 of 24  
 
 
 
Data Sheet  
ADF4360-8  
LATCH STRUCTURE  
Table 6 shows the three on-chip latches for the ADF4360-8. The two LSBs decide which latch is programmed.  
Table 6. Latch Structure  
CONTROL LATCH  
OUTPUT  
POWER  
LEVEL  
CORE  
POWER  
LEVEL  
CURRENT  
SETTING 2  
CURRENT  
SETTING 1  
MUXOUT  
CONTROL  
CONTROL  
BITS  
DB23 DB22 DB21 DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0  
RSV RSV PD2 PD1 CPI6 CPI5 CPI4 CPI3 CPI2 CPI1 PL2 PL1 MTLD CPG CP  
PDP  
M3  
M2  
M1  
CR  
PC2 PC1 C2 (0) C1 (0)  
N COUNTER LATCH  
CONTROL  
BITS  
13-BIT B COUNTER  
RESERVED  
DB23 DB22 DB21 DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0  
CPG B13 B12 B11 B10  
B9  
B8  
B7  
B6  
B5  
B4  
B3  
B2  
B1  
RSV RSV RSV RSV RSV RSV C2 (1) C1 (0)  
RSV RSV  
R COUNTER LATCH  
ANTI-  
BACKLASH  
PULSE  
BAND  
SELECT  
CLOCK  
CONTROL  
BITS  
14-BIT REFERENCE COUNTER  
WIDTH  
DB23 DB22 DB21 DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0  
RSV RSV BSC2 BSC1 TMB LDP ABP2 ABP1 R14 R13 R12 R11 R10 R9 R8 R7 R6 R5 R4 R3 R2 R1 C2 (0) C1 (1)  
Rev. D | Page 13 of 24  
 
ADF4360-8  
Data Sheet  
Table 7. Control Latch  
OUTPUT  
POWER  
LEVEL  
CORE  
POWER  
LEVEL  
CURRENT  
SETTING 2  
CURRENT  
SETTING 1  
MUXOUT  
CONTROL  
CONTROL  
BITS  
DB23 DB22 DB21 DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0  
RSV RSV PD2 PD1 CPI6 CPI5 CPI4 CPI3 CPI2 CPI1 PL2 PL1 MTLD CPG CP  
PDP  
M3  
M2  
M1  
CR  
PC2 PC1 C2 (0) C1 (0)  
PC2  
CORE POWER LEVEL  
PC1  
0
0
1
1
2.5mA  
5mA  
7.5mA  
10mA  
0
1
0
1
I
(mA)  
PHASE DETECTOR  
PDP POLARITY  
CPI6  
CPI3  
CPI5  
CPI2  
CPI4  
CPI1  
CP  
4.7k  
COUNTER  
0
1
NEGATIVE  
POSITIVE  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0.31  
0.62  
0.93  
1.25  
1.56  
1.87  
2.18  
2.50  
CR  
OPERATION  
0
1
NORMAL  
R, A, B COUNTERS  
HELD IN RESET  
CHARGE PUMP  
OUTPUT  
NORMAL  
CP  
0
1
THREE-STATE  
CP GAIN  
CPG  
0
1
CURRENT SETTING 1  
CURRENT SETTING 2  
MUTE-TIL-LOCK DETECT  
DISABLED  
ENABLED  
MTLD  
0
1
M3  
0
0
M2  
0
0
M1  
0
1
MUXOUT  
THREE-STATE OUTPUT  
DIGITAL LOCK DETECT  
(ACTIVE HIGH)  
PL2  
PL1  
OUTPUT POWER LEVEL  
CURRENT  
(USING TUNED LOAD)  
(USING 50TO V  
)
VCO  
0
0
1
1
0
1
0
1
3.5mA  
5.0mA  
7.5mA  
11.0mA  
–9dBm  
–6dBm  
–3dBm  
0dBm  
–19dBm  
–15dBm  
–12dBm  
–9dBm  
0
0
1
1
0
1
N DIVIDER OUTPUT  
DV  
DD  
R DIVIDER OUTPUT  
NOT USED  
NOT USED  
1
1
1
1
0
0
1
1
0
1
0
1
DGND  
CE PIN  
PD2  
X
X
0
1
PD1  
MODE  
0
1
1
1
X
0
1
1
ASYNCHRONOUS POWER-DOWN  
NORMAL OPERATION  
ASYNCHRONOUS POWER-DOWN  
SYNCHRONOUS POWER-DOWN  
THESE BITS ARE  
NOT USED BY THE  
DEVICE AND ARE  
DON'T CARE BITS.  
Rev. D | Page 14 of 24  
 
Data Sheet  
ADF4360-8  
Table 8. N Counter Latch  
CONTROL  
BITS  
13-BIT B COUNTER  
RESERVED  
DB23 DB22 DB21 DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0  
RSV RSV CPG B13 B12 B11 B10  
B9  
B8  
B7  
B6  
B5  
B4  
B3  
B2  
B1  
RSV RSV RSV RSV RSV RSV C2 (1) C1 (0)  
THESE BITS ARE  
NOT USED BY THE  
DEVICE AND ARE  
DON'T CARE BITS.  
B13  
B12  
B11  
B3  
B2  
0
0
1
1
.
.
.
0
0
1
1
B1  
0
1
0
1
.
.
.
0
1
0
1
B COUNTER DIVIDE RATIO  
NOT ALLOWED  
NOT ALLOWED  
NOT ALLOWED  
3
.
.
.
8188  
8189  
8190  
8191  
0
0
0
0
.
.
.
1
1
1
1
0
0
0
0
.
.
.
1
1
1
1
0
0
0
0
.
.
.
1
1
1
1
..........  
..........  
..........  
..........  
..........  
..........  
..........  
..........  
..........  
..........  
..........  
0
0
0
1
.
.
.
1
1
1
1
F4 (FUNCTION LATCH)  
FASTLOCK ENABLE  
CP GAIN OPERATION  
0
0
0
1
CHARGE PUMP CURRENT SETTING 1  
IS PERMANENTLY USED  
CHARGE PUMP CURRENT SETTING 2  
IS PERMANENTLY USED  
N = B; P IS PRESCALER VALUE SET IN THE CONTROL LATCH.  
B MUST BE GREATER THAN OR EQUAL TO A. FOR CONTINUOUSLY  
THESE BITS ARE  
NOT USED BY THE  
DEVICE AND ARE  
DON'T CARE BITS.  
2
ADJACENT VALUES OF (N F  
), AT THE OUTPUT, N  
IS (P –P).  
MIN  
REF  
Rev. D | Page 15 of 24  
 
ADF4360-8  
Data Sheet  
Table 9. R Counter Latch  
ANTI-  
BACKLASH  
PULSE  
BAND  
SELECT  
CLOCK  
CONTROL  
BITS  
14-BIT REFERENCE COUNTER  
WIDTH  
DB23 DB22 DB21 DB20 DB19 DB18 DB17 DB16 DB15 DB14 DB13 DB12 DB11 DB10 DB9 DB8 DB7 DB6 DB5 DB4 DB3 DB2 DB1 DB0  
RSV RSV BSC2 BSC1 TMB LDP ABP2 ABP1 R14 R13 R12 R11 R10  
R9  
R8  
R7  
R6  
R5  
R4  
R3  
R2  
R1 C2 (0) C1 (1)  
R14  
0
0
R13  
R12  
R3  
0
0
0
1
.
.
.
1
1
1
1
R2  
0
1
1
0
.
.
.
0
0
1
1
R1  
DIVIDE RATIO  
1
2
3
4
.
.
.
16380  
16381  
16382  
16383  
0
0
0
0
.
.
.
1
1
1
1
0
0
0
0
.
.
.
1
1
1
1
..........  
..........  
..........  
..........  
..........  
..........  
..........  
..........  
..........  
..........  
..........  
1
0
1
0
.
.
.
0
1
0
1
0
TEST MODE  
BIT SHOULD  
BE SET TO 0  
0
.
.
FOR NORMAL  
OPERATION.  
THESE BITS ARE NOT  
USED BY THE DEVICE  
AND ARE DON'T CARE  
BITS.  
.
1
1
1
1
ABP2  
ABP1  
ANTIBACKLASH PULSE WIDTH  
0
0
1
1
0
1
0
1
3.0ns  
1.3ns  
6.0ns  
3.0ns  
LDP  
0
LOCK DETECT PRECISION  
THREE CONSECUTIVE CYCLES OF PHASE DELAY LESS THAN  
15ns MUST OCCUR BEFORE LOCK DETECT IS SET.  
1
FIVE CONSECUTIVE CYCLES OF PHASE DELAY LESS THAN  
15ns MUST OCCUR BEFORE LOCK DETECT IS SET.  
BSC2  
BSC1  
BAND SELECT CLOCK DIVIDER  
0
0
1
1
0
1
0
1
1
2
4
8
Rev. D | Page 16 of 24  
 
Data Sheet  
ADF4360-8  
these currents have not settled to within 10% of their steady-  
state value, and if the N counter latch is then programmed, the  
VCO may not oscillate at the desired frequency, which does not  
allow the band select logic to choose the correct frequency band,  
and the ADF4360-8 may not achieve lock. If the recommended  
interval is inserted, and the N counter latch is programmed, the  
band select logic can choose the correct frequency band, and  
the device locks to the correct frequency.  
POWER-UP  
Power-Up Sequence  
The correct programming sequence for the ADF4360-8 after  
power-up is  
1. R counter latch  
2. Control latch  
3. N counter latch  
The duration of this interval is affected by the value of the  
capacitor on the CN pin (Pin 14). This capacitor is used to  
reduce the close-in noise of the ADF4360-8 VCO. The  
recommended value of this capacitor is 10 μF. Using this value  
requires an interval of ≥15 ms between the latching in of the  
control latch bits and latching in of the N counter latch bits. If a  
shorter delay is required, the capacitor can be reduced. A slight  
phase noise penalty is incurred by this change, which is further  
explained in Table 10.  
Initial Power-Up  
Initial power-up refers to programming the device after the  
application of voltage to the AVDD, DVDD, VVCO, and CE pins. On  
initial power-up, an interval is required between programming  
the control latch and programming the N counter latch. This  
interval is necessary to allow the transient behavior of the  
ADF4360-8 during initial power-up to settle.  
During initial power-up, a write to the control latch powers up  
the device, and the bias currents of the VCO begin to settle. If  
Table 10. CN Capacitance vs. Interval and Phase Noise  
Open-Loop Phase Noise at 10 kHz Offset  
CN  
Recommended Interval Between  
Value  
Control Latch and N Counter Latch L1 and L2 = 18.0 nH  
L1 and L2 = 110.0 nH  
−97 dBc/Hz  
−96 dBc/Hz  
L1 and L2 = 560.0 nH  
−99 dBc/Hz  
−98 dBc/Hz  
10 μF  
440 nF  
≥15 ms  
−100 dBc/Hz  
−99 dBc/Hz  
≥ 600 μs  
POWER-UP  
CLOCK  
R COUNTER  
LATCH DATA  
CONTROL  
LATCH DATA  
N COUNTER  
LATCH DATA  
DATA  
LE  
REQUIRED INTERVAL  
CONTROL LATCH WRITE TO  
N COUNTER LATCH WRITE  
Figure 21. ADF4360-8 Power-Up Timing  
Rev. D | Page 17 of 24  
 
 
 
ADF4360-8  
Data Sheet  
Hardware Power-Up/Power-Down  
Software Power-Up/Power-Down  
If the device is powered down via the hardware (using the CE  
pin) and powered up again without any change to the N counter  
register during power-down, the device locks at the correct  
frequency, because the device is already in the correct frequency  
band. The lock time depends on the value of capacitance on the  
CN pin, which is <15 ms for 10 μF capacitance. The smaller  
capacitance of 440 nF on this pin enables lock times of <600 μs.  
If the device is powered down via the software (using the con-  
trol latch) and powered up again without any change to the N  
counter latch during power-down, the device locks at the cor-  
rect frequency, because the device is already in the correct fre-  
quency band. The lock time depends on the value of capaci-  
tance on the CN pin, which is <15 ms for 10 μF capacitance. The  
smaller capacitance of 440 nF on this pin enables lock times of  
<600 μs.  
The N counter value cannot be changed while the device is in  
power-down, since the device may not lock to the correct  
frequency on power-up. If it is updated, the correct program-  
ming sequence for the device after power-up is the R counter  
latch, followed by the control latch, and finally the N counter  
latch, with the required interval between the control latch and  
N counter latch, as described in the Initial Power-Up section.  
The N counter value cannot be changed while the device is in  
power-down, because the device may not lock to the correct  
frequency on power-up. If it is updated, the correct program-  
ming sequence for the device after power-up is to the R counter  
latch, followed by the control latch, and finally the N counter  
latch, with the required interval between the control latch and  
N counter latch, as described in the Initial Power-Up section.  
Rev. D | Page 18 of 24  
Data Sheet  
ADF4360-8  
Charge Pump Currents  
CONTROL LATCH  
CPI3, CPI2, and CPI1 in the ADF4360-8 determine  
Current Setting 1.  
With (C2, C1) = (0, 0), the control latch is programmed. Table 7  
shows the input data format for programming the control latch.  
CPI6, CPI5, and CPI4 determine Current Setting 2. See the  
truth table in Table 7.  
Power-Down  
DB21 (PD2) and DB20 (PD1) provide programmable power-  
down modes.  
Output Power Level  
Bits PL1 and PL2 set the output power level of the VCO. See the  
truth table in Table 7.  
In the programmed asynchronous power-down, the device  
powers down immediately after latching a 1 into Bit PD1,  
with the condition that PD2 has been loaded with a 0. In the  
programmed synchronous power-down, the device power-  
down is gated by the charge pump to prevent unwanted  
frequency jumps. Once the power-down is enabled by writing a  
1 into Bit PD1 (on the condition that a 1 has also been loaded to  
PD2), the device goes into power-down on the second rising  
edge of the R counter output, after LE goes high. When the  
CE pin is low, the device is immediately disabled, regardless  
of the state of PD1 or PD2.  
Mute-Till-Lock Detect  
DB11 of the control latch in the ADF4360-8 is the Mute-Till-  
Lock Detect bit. This function, when enabled, ensures that the  
RF outputs are not switched on until the PLL is locked.  
CP Gain  
DB10 of the control latch in the ADF4360-8 is the Charge  
Pump Gain bit. When it is programmed to 1, Current Setting 2  
is used. When programmed to 0, Current Setting 1 is used.  
When a power-down is activated (either synchronous or  
asynchronous mode), the following events occur:  
Charge Pump Three-State  
This bit puts the charge pump into three-state mode when  
programmed to a 1. It should be set to 0 for normal operation.  
All active dc current paths are removed.  
The R, N, and timeout counters are forced to their load  
state conditions.  
Phase Detector Polarity  
The PDP bit in the ADF4360-8 sets the phase detector polarity.  
The positive setting enabled by programming a 1 is used when  
using the on-chip VCO with a passive loop filter or with an  
active non-inverting filter. It can also be set to 0, which is re-  
quired if an active inverting loop filter is used.  
The charge pump is forced into three-state mode.  
The digital lock detect circuitry is reset.  
The RF outputs are de-biased to a high impedance state.  
The reference input buffer circuitry is disabled.  
The input register remains active and capable of loading  
and latching data.  
MUXOUT Control  
The on-chip multiplexer is controlled by M3, M2, and M1.  
See the truth table in Table 7.  
Counter Reset  
DB4 is the counter reset bit for the ADF4360-8. When this is 1,  
the R counter and the A, B counters are reset. For normal oper-  
ation, this bit should be 0.  
Core Power Level  
PC1 and PC2 set the power level in the VCO core. The recom-  
mended setting is 5 mA. See the truth table in Table 7.  
Rev. D | Page 19 of 24  
 
ADF4360-8  
Data Sheet  
N COUNTER LATCH  
R COUNTER LATCH  
Table 8 shows the input data format for programming the  
N counter latch.  
With (C2, C1) = (0, 1), the R counter latch is programmed.  
Table 9 shows the input data format for programming the  
R counter latch.  
Reserved Bits  
R Counter  
DB2 to DB7 are spare bits and have been designated as  
reserved. They should be programmed to 0.  
R1 to R14 set the counter divide ratio. The divide range is  
1 (00...001) to 16383 (111...111).  
B Counter Latch  
Antibacklash Pulse Width  
B13 to B1 program the B counter. The divide range is 3  
(00...0011) to 8191 (11...111).  
DB16 and DB17 set the antibacklash pulse width.  
Overall Divide Range  
Lock Detect Precision  
The overall VCO feedback divide range is defined by B.  
DB18 is the lock detect precision bit. This bit sets the number of  
reference cycles with less than 15 ns phase error for entering the  
locked state. With LDP at 1, five cycles are taken; with LDP at 0,  
three cycles are taken.  
CP Gain  
DB21 of the N counter latch in the ADF4360-8 is the charge  
pump gain bit. When it is programmed to 1, Current Setting 2 is  
used. When programmed to 0, Current Setting 1 is used. This bit  
can also be programmed through DB10 of the control latch. The bit  
always reflects the latest value written to it, whether this is through  
the control latch or the N counter latch.  
Test Mode Bit  
DB19 is the test mode bit (TMB) and should be set to 0. With  
TMB = 0, the contents of the test mode latch are ignored and  
normal operation occurs, as determined by the contents of the  
control latch, R counter latch, and N counter latch. Note that  
test modes are for factory testing only and should not be  
programmed by the user.  
Band Select Clock  
These bits set a divider for the band select logic clock input.  
The output of the R counter is, by default, the value used to  
clock the band select logic; if this value is too high (>1 MHz), a  
divider can be switched on to divide the R counter output to a  
smaller value (see Table 9).  
Reserved Bits  
DB23 to DB22 are spare bits that have been designated as  
reserved. They should be programmed to 0.  
Rev. D | Page 20 of 24  
 
 
Data Sheet  
ADF4360-8  
APPLICATIONS INFORMATION  
12  
10  
CHOOSING THE CORRECT INDUCTANCE VALUE  
The ADF4360-8 can be used at many different frequencies  
simply by choosing the external inductors to give the correct  
output frequency. Figure 22 shows a graph of both minimum  
and maximum frequency vs. the external inductor value. The  
correct inductor should cover the maximum and minimum  
frequencies desired. The inductors used are 0603 CS or 0805 CS  
type from Coilcraft. To reduce mutual coupling, the inductors  
should be placed at right angles to one another.  
8
6
4
2
0
The lowest center frequency of oscillation possible is approxi-  
mately 65 MHz, which is achieved using 560 nH inductors. This  
relationship can be expressed by  
0
100  
200  
300  
400  
500  
600  
INDUCTANCE (nH)  
Figure 23. Tuning Sensitivity (in MHz/V) vs. Inductance (nH)  
1
FO  
2π 9.3 pF  
0.9 nH LEXT  
FIXED FREQUENCY LO  
Figure 24 shows the ADF4360-8 used as a fixed frequency LO at  
200 MHz. The low-pass filter was designed using ADIsimPLL  
for a channel spacing of 2 MHz and an open-loop bandwidth of  
100 kHz. The maximum PFD frequency of the ADF4360-8 is  
8 MHz. Since using a larger PFD frequency allows the use of a  
smaller N, the in-band phase noise is reduced to as low as pos-  
sible, −109 dBc/Hz. The typical rms phase noise (100 Hz to  
100 kHz) of the LO in this configuration is 0.09°. The reference  
frequency is from a 16 MHz TCXO from Fox; thus, an R value of  
2 is programmed. Taking into account the high PFD frequency  
and its effect on the band select logic, the band select clock  
divider is enabled. In this case, a value of 8 is chosen. A very  
simple shunt inductor and dc-blocking capacitor complete the RF  
output stage.  
where FO is the center frequency and LEXT is the external induct-  
ance.  
450  
400  
350  
300  
250  
200  
150  
100  
50  
0
LOCK  
V
V
DETECT  
0
100  
200  
300  
400  
500  
600  
VCO  
VDD  
INDUCTANCE (nH)  
Figure 22. Output Center Frequency vs. External Inductor Value  
6
21  
DV  
2
23  
20  
10F  
V
CE MUXOUT  
7
TUNE  
CP  
AV  
DD  
V
VCO  
DD  
15k  
14  
16  
C
N
24  
The approximate value of capacitance at the midpoint of the  
center band of the VCO is 9.3 pF, and the approximate value of  
internal inductance due to the bond wires is 0.9 nH. The VCO  
sensitivity is a measure of the frequency change vs. the tuning  
voltage. It is a very important parameter for the low-pass filter.  
Figure 23 shows a graph of the tuning sensitivity (in MHz/V)  
vs. the inductance (nH). It can be seen that as the inductance  
increases, the sensitivity decreases. This relationship can be  
derived from the equation above; that is, since the inductance  
has increased, the change in capacitance from the varactor has  
less of an effect on the frequency.  
1nF 1nF  
FOX  
801BE-160  
16MHz  
REF  
IN  
680pF  
47pF  
22nF  
51  
17 CLK  
6.8k  
ADF4360-8  
18  
19  
12  
DATA  
LE  
V
VCO  
C
C
56nH 56nH  
100pF  
13  
R
SET  
1nF  
RF  
A
B
4
5
OUT  
4.7k  
CPGND  
1
AGND DGND L1 L2  
RF  
OUT  
9
3
8
11 22 15  
10  
100pF  
68nH  
470  
470  
68nH  
Figure 24. Fixed Frequency LO  
Rev. D | Page 21 of 24  
 
 
 
 
 
 
ADF4360-8  
Data Sheet  
ADSP-2181 Interface  
INTERFACING  
Figure 26 shows the interface between the ADF4360-8 and the  
ADSP-2181 digital signal processor. The ADF4360-8 needs a  
24-bit serial word for each latch write. The easiest way to ac-  
complish this using the ADSP-2181 is to use the autobuffered  
transmit mode of operation with alternate framing. This pro-  
vides a means for transmitting an entire block of serial data  
before an interrupt is generated.  
The ADF4360-8 has a simple SPI-compatible serial interface for  
writing to the device. CLK, DATA, and LE control the data  
transfer. When LE goes high, the 24 bits that have been clocked  
into the appropriate register on each rising edge of CLK are  
transferred to the appropriate latch. See Figure 2 for the timing  
diagram and Table 5 for the latch truth table.  
The maximum allowable serial clock rate is 20 MHz. This  
means that the maximum update rate possible is 833 kHz, or  
one update every 1.2 μs. This is more than adequate for systems  
that have typical lock times in hundreds of microseconds.  
SCLOCK  
SCLK  
MOSI  
TFS  
SDATA  
LE  
ADF4360-8  
ADSP-2181  
I/O PORTS  
ADuC812 Interface  
CE  
MUXOUT  
(LOCK DETECT)  
Figure 25 shows the interface between the ADF4360-8 and the  
ADuC812 MicroConverter®. Since the ADuC812 is based on an  
8051 core, this interface can be used with any 8051-based mi-  
crocontrollers. The MicroConverter is set up for SPI master  
mode with CPHA = 0. To initiate the operation, the I/O port  
driving LE is brought low. Each latch of the ADF4360-8 needs a  
24-bit word, which is accomplished by writing three 8-bit bytes  
from the MicroConverter to the device. After the third byte has  
been written, the LE input should be brought high to complete  
the transfer.  
Figure 26. ADSP-2181 to ADF4360-8 Interface  
Set up the word length for 8 bits and use three memory loca-  
tions for each 24-bit word. To program each 24-bit latch, store  
the 8-bit bytes, enable the autobuffered mode, and write to the  
transmit register of the DSP. This last operation initiates the  
autobuffer transfer.  
PCB DESIGN GUIDELINES FOR CHIP SCALE PACKAGE  
SCLOCK  
MOSI  
SCLK  
The leads on the chip scale package (CP-24) are rectangular.  
The printed circuit board pad for these should be 0.1 mm long-  
er than the package lead length and 0.05 mm wider than the  
package lead width. The lead should be centered on the pad to  
ensure that the solder joint size is maximized.  
SDATA  
ADuC812  
LE  
ADF4360-8  
I/O PORTS  
CE  
MUXOUT  
(LOCK DETECT)  
The bottom of the chip scale package has a central thermal pad.  
The thermal pad on the printed circuit board should be at least  
as large as this exposed pad. On the printed circuit board, there  
should be a clearance of at least 0.25 mm between the thermal  
pad and the inner edges of the pad pattern to ensure that short-  
ing is avoided.  
Figure 25. ADuC812 to ADF4360-8 Interface  
I/O port lines on the ADuC812 are also used to control power-  
down (CE input) and detect lock (MUXOUT configured as lock  
detect and polled by the port input). When operating in the  
described mode, the maximum SCLOCK rate of the ADuC812  
is 4 MHz. This means that the maximum rate at which the  
output frequency can be changed is 166 kHz.  
Thermal vias may be used on the printed circuit board thermal  
pad to improve thermal performance of the package. If vias  
are used, they should be incorporated into the thermal pad at  
1.2 mm pitch grid. The via diameter should be between 0.3 mm  
and 0.33 mm, and the via barrel should be plated with 1 ounce  
of copper to plug the via.  
The user should connect the printed circuit thermal pad to  
AGND. This is internally connected to AGND.  
Rev. D | Page 22 of 24  
 
 
 
 
Data Sheet  
ADF4360-8  
The recommended value of this inductor changes with the VCO  
center frequency. A graph of the optimum inductor value vs.  
frequency is shown in Figure 29.  
OUTPUT MATCHING  
There are a number of ways to match the output of the  
ADF4360-8 for optimum operation; the most basic is to use a  
50 Ω resistor to VVCO. A dc bypass capacitor of 100 pF is  
connected in series, as shown in Figure 27. Because the resistor  
is not frequency dependent, this provides a good broadband  
match. The output power in the circuit below typically gives  
−9 dBm output power into a 50 Ω load.  
300  
250  
200  
150  
V
VCO  
51  
100  
50  
0
100pF  
RF  
OUT  
50Ω  
Figure 27. Simple ADF4360-8 Output Stage  
0
100  
200  
300  
400  
5000  
CENTRE FREQUENCY (MHz)  
A better solution is to use a shunt inductor (acting as an RF  
choke) to VVCO. This gives a better match and, therefore, more  
output power.  
Figure 29. Optimum ADF4360-8 Shunt Inductor  
Both complementary architectures can be examined using the  
EV-ADF4360-8EB1Z evaluation board. If the user does not  
need the differential outputs available on the ADF4360-8, the  
user should either terminate the unused output or combine  
both outputs using a balun. Alternatively, instead of the LC  
balun, both outputs may be combined using a 180° rat-race  
coupler.  
Experiments have shown that the circuit shown in Figure 28  
provides an excellent match to 50 Ω over the operating range of  
the ADF4360-8. This gives approximately 0 dBm output power  
across the specific frequency range of the ADF4360-8 using the  
recommended shunt inductor, followed by a 100 pF dc blocking  
capacitor.  
V
VCO  
L
100pF  
RF  
OUT  
50Ω  
Figure 28. Optimum ADF4360-8 Output Stage  
Rev. D | Page 23 of 24  
 
 
 
 
 
ADF4360-8  
Data Sheet  
OUTLINE DIMENSIONS  
4.10  
4.00 SQ  
3.90  
PIN 1  
INDICATOR  
PIN 1  
INDICATOR  
24  
1
19  
18  
0.50  
BSC  
2.40  
2.30 SQ  
2.20  
EXPOSED  
PAD  
6
13  
12  
7
0.50  
0.40  
0.30  
0.20 MIN  
TOP VIEW  
BOTTOM VIEW  
FOR PROPER CONNECTION OF  
THE EXPOSED PAD, REFER TO  
THE PIN CONFIGURATION AND  
FUNCTION DESCRIPTIONS  
0.80  
0.75  
0.70  
0.05 MAX  
0.02 NOM  
SECTION OF THIS DATA SHEET.  
COPLANARITY  
0.08  
0.203 REF  
SEATING  
PLANE  
0.30  
0.25  
0.20  
COMPLIANT TO JEDEC STANDARDS MO-220-WGGD-8.  
Figure 30. 24-Lead Lead Frame Chip Scale Package [LFCSP]  
4 mm x 4 mm Body and 0.75 mm Package Height  
(CP-24-14)  
Dimensions shown in millimeters  
ORDERING GUIDE  
Model1  
Temperature Range Frequency Range  
Package Description  
Package Option  
CP-24-14  
CP-24-14  
ADF43±0-8BCPZ  
ADF43±0-8BCPZRL  
ADF43±0-8BCPZRL7 −40°C to +85°C  
EV-ADF43±0-8EB1Z  
−40°C to +85°C  
−40°C to +85°C  
±5 MHz to 400 MHz 24-Lead Lead Frame Chip Scale Package [LFCSP]  
±5 MHz to 400 MHz 24-Lead Lead Frame Chip Scale Package [LFCSP]  
±5 MHz to 400 MHz 24-Lead Lead Frame Chip Scale Package [LFCSP]  
Evaluation Board  
CP-24-14  
1Z = RoHS Compliant Part.  
©2004-2016 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D04763-0-5/16(D)  
Rev. D | Page 24 of 24  
 

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