ADG602 [ADI]

2 ohm CMOS +-5 V/5 V, SPST SWITCHES; 2欧姆CMOS + -5 V / 5 V , SPST开关
ADG602
型号: ADG602
厂家: ADI    ADI
描述:

2 ohm CMOS +-5 V/5 V, SPST SWITCHES
2欧姆CMOS + -5 V / 5 V , SPST开关

开关
文件: 总8页 (文件大小:132K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2 CMOS  
5 V/5 V, SPST Switches  
a
ADG601/ADG602  
FUNCTIONAL BLOCK DIAGRAMS  
FEATURES  
Low On Resistance 2.5 Max  
<0.6 On Resistance Flatness  
Dual 2.7 V to 5.5 V or Single 2.7 V to 5.5 V Supplies  
Rail-to-Rail Input Signal Range  
Tiny 6-Lead SOT-23 and 8-Lead Micro-SOIC Packages  
Low Power Consumption  
D
S
D
S
TTL/CMOS-Compatible Inputs  
IN  
IN  
APPLICATIONS  
Automatic Test Equipment  
Power Routing  
ADG602  
ADG601  
SWITCHES SHOWN FOR A LOGIC “1” INPUT  
Communication Systems  
Data Acquisition Systems  
Sample and Hold Systems  
Avionics  
Relay Replacement  
Battery-Powered Systems  
GENERAL DESCRIPTION  
Table I. Truth Table  
The ADG601/ADG602 are monolithic CMOS SPST (Single  
Pole, Single Throw) switches with On Resistance typically less  
than 2.5 . The Low On Resistance flatness makes the ADG601/  
ADG602 ideally suited to many applications, particularly those  
requiring low distortion. These switches are ideal for replace-  
ments for mechanical relays because they are more reliable, have  
lower power requirements, and package size is much smaller.  
ADG601 In  
ADG602 In  
Switch Condition  
0
1
1
0
OFF  
ON  
PRODUCT HIGHLIGHTS  
1. Low On Resistance (2 typical)  
2. Dual 2.7 V to 5.5 V or Single 2.7 V to 5.5 V Supplies  
3. Tiny 6-lead SOT-23 and 8-lead Micro-SOIC Packages  
4. Rail-to-Rail Input Signal Range  
The ADG601 is a normally open (NO) switch, while the ADG602  
is normally closed (NC). Each switch conducts equally well in  
both directions when ON, with the input signal range extending  
to the supply rails.  
They are available in tiny 6-lead SOT-23 and 8-lead Micro-  
SOIC packages.  
REV. 0  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, norforanyinfringementsofpatentsorotherrightsofthirdpartiesthat  
may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781/329-4700  
Fax: 781/326-8703  
www.analog.com  
© Analog Devices, Inc., 2001  
ADG601/ADG602–SPECIFICATIONS  
DUAL SUPPLY (VDD = 5 V 10%, VSS = –5 V 10%, GND = 0 V, unless otherwise noted.)  
B Version  
–40oC  
Parameter  
25oC  
to +85oC  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
VSS to VDD  
V
VDD = +4.5 V, VSS = –4.5 V  
On Resistance (RON  
)
2
typ  
max  
typ  
max  
VS = 4.5 V, IS = –10 mA;  
Test Circuit 1  
VS = 3.3 V, IS = –10 mA  
2.5  
0.35  
0.4  
5.5  
0.6  
On-Resistance Flatness (RFLAT(ON)  
)
LEAKAGE CURRENTS  
VDD = +5.5 V, VSS = –5.5 V  
VS = +4.5 V/–4.5 V, VD = –4.5 V/+4.5 V;  
Test Circuit 2  
VS = +4.5 V/–4.5 V, VD = –4.5 V/+4.5 V;  
Test Circuit 2  
VS = VD = +4.5 V, or –4.5 V;  
Test Circuit 3  
Source OFF Leakage IS (OFF)  
Drain OFF Leakage ID (OFF)  
Channel ON Leakage ID, IS (ON)  
0.01  
0.25  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
nA typ  
nA max  
1
1
1
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.4  
0.8  
V min  
V max  
IINL or IINH  
0.005  
2
µA typ  
µA max  
pF typ  
VIN = VINL or VINH  
0.1  
CIN, Digital Input Capacitance  
DYNAMIC CHARACTERISTICS2  
tON  
80  
120  
45  
ns typ  
ns max  
ns typ  
ns max  
pC typ  
dB typ  
MHz typ  
pF typ  
pF typ  
pF typ  
RL = 300 , CL = 35 pF  
VS = 3.3 V; Test Circuit 4  
RL = 300 , CL = 35 pF  
VS = 3.3 V; Test Circuit 4  
VS = 0 V, RS = 0 , CL = 1 nF; Test Circuit 5  
RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 6  
RL = 50 , CL = 5 pF; Test Circuit 7  
f = 1 MHz  
155  
90  
tOFF  
75  
Charge Injection  
Off Isolation  
Bandwidth –3 dB  
250  
–60  
180  
50  
50  
145  
CS (OFF)  
C
D (OFF)  
f = 1 MHz  
f = 1 MHz  
CD, CS (ON)  
POWER REQUIREMENTS  
VDD = +5.5 V, VSS = –5.5 V  
Digital Inputs = 0 V or 5.5 V  
IDD  
ISS  
0.001  
0.001  
µA typ  
µA max  
µA typ  
µA max  
1.0  
1.0  
Digital Inputs = 0 V or 5.5 V  
NOTES  
1Temperature range is as follows: B Version: 40°C to +85°C.  
2Guaranteed by design, not subject to production test.  
Specifications subject to change without notice.  
–2–  
REV. 0  
ADG601/ADG602  
SINGLE SUPPLY1(VDD = 5 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)  
B Version  
–40C  
to +85C  
Parameter  
25C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
V
VDD = 4.5 V  
On Resistance (RON  
)
3.5  
5
0.2  
typ  
max  
typ  
max  
VS = 0 V to 4.5 V, IS = –10 mA;  
Test Circuit 1  
VS = 1.5 V to 3.3 V, IS = –10 mA  
8
0.2  
0.35  
On-Resistance Flatness (RFLAT(ON)  
)
LEAKAGE CURRENTS  
VDD = 5.5 V  
Source OFF Leakage IS (OFF)  
Drain OFF Leakage ID (OFF)  
Channel ON Leakage ID, IS (ON)  
0.01  
0.25  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
nA typ  
nA max  
VS = 4.5 V/1 V, VD = 1 V/4.5 V;  
Test Circuit 2  
VS = 4.5 V/1 V, VD = 1 V/4.5 V;  
Test Circuit 2  
VS = VD = 4.5 V, or 1 V;  
Test Circuit 3  
1
1
1
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.4  
0.8  
V min  
V max  
I
INL or IINH  
0.005  
2
µA typ  
µA max  
pF typ  
VIN = VINL or VINH  
0.1  
CIN, Digital Input Capacitance  
DYNAMIC CHARACTERISTICS2  
tON  
110  
220  
50  
80  
20  
–60  
180  
50  
50  
145  
ns typ  
ns max  
ns typ  
ns max  
pC typ  
dB typ  
MHz typ  
pF typ  
pF typ  
pF typ  
RL = 300 , CL = 35 pF  
VS = 3.3 V; Test Circuit 4  
RL = 300 , CL = 35 pF  
VS = 3.3 V; Test Circuit 4  
VS = 0 V, RS = 0 , CL = 1 nF, Test Circuit 5  
RL = 50 , CL = 5 pF, f = 1 MHz, Test Circuit 6  
RL = 50 , CL = 5 pF, Test Circuit 7  
f = 1 MHz  
280  
110  
tOFF  
Charge Injection  
Off Isolation  
Bandwidth –3 dB  
CS (OFF)  
CD (OFF)  
CD, CS (ON)  
f = 1 MHz  
f = 1 MHz  
POWER REQUIREMENTS  
VDD = 5.5 V  
IDD  
0.001  
µA typ  
µA max  
Digital Inputs = 0 V or 5.5 V  
1.0  
NOTES  
1Temperature range is as follows: B Version: –40°C to +85°C.  
2Guaranteed by design, not subject to production test.  
Specifications subject to change without notice.  
–3–  
REV. 0  
ADG601/ADG602  
ABSOLUTE MAXIMUM RATINGS1  
PIN CONFIGURATIONS  
(TA = 25°C unless otherwise noted)  
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V  
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V  
6-Lead Plastic Surface Mount (SOT_23)  
(RT-6)  
V
SS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6.5 V  
Analog Inputs2 . . . . . . . . . . . . . . . . . VSS –0.3 V to VDD +0.3 V  
Digital Inputs2 . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V  
or 30 mA, whichever occurs first  
1
2
3
8
7
6
IN  
V
DD  
ADG601/  
ADG602  
TOP VIEW  
S
D
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA  
Peak Current, S or D  
V
GND  
SS  
(Not to Scale)  
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . 200 mA  
Operating Temperature Range  
Industrial (B Version) . . . . . . . . . . . . . . . –40°C to +85°C  
Storage Temperature Range . . . . . . . . . . . –65°C to +150°C  
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C  
Micro-SOIC Package  
8-Lead Small Outline Micro-SOIC  
(RM-8)  
θ
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 206°C/W  
1
2
3
4
8
7
6
5
S
D
NC  
NC  
θ
JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 44°C/W  
ADG601/  
ADG602  
TOP VIEW  
(Not to Scale)  
GND  
IN  
SOT_23 Package  
θ
θ
Lead Temperature, Soldering (10 seconds) . . . . . . . . . 300°C  
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . . 220°C  
JA Thermal Impedance . . . . . . . . . . . . . . . . . . 229.6°C/W  
JC Thermal Impedance . . . . . . . . . . . . . . . . . . 91.99°C/W  
V
V
DD  
SS  
NC = NO CONNECT  
NOTES  
1Stresses above those listed under Absolute Maximum Ratings may cause perma-  
nent damage to the device. This is a stress rating only; functional operation of the  
device at these or any other conditions above those listed in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability. Only one absolute  
maximum rating may be applied at any one time.  
2Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be  
limited to the maximum ratings given.  
ORDERING GUIDE  
Package Description  
Plastic Surface-Mount (SOT_23)  
Micro Small Outline (Micro-SOIC) RM-8  
Plastic Surface-Mount (SOT_23) RT-6  
Micro Small Outline (Micro-SOIC) RM-8  
*
Model  
Temperature Range  
Package Option  
Branding Information  
ADG601BRT  
ADG601BRM  
ADG602BRT  
ADG602BRM  
–40°C to +85°C  
–40°C to +85°C  
–40°C to +85°C  
–40°C to +85°C  
RT-6  
STB  
STB  
SUB  
SUB  
*Branding on SOT_23 and Micro-SOIC packages is limited to three characters due to space constraints.  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection. Although  
the ADG601/ADG602 features proprietary ESD protection circuitry, permanent damage may  
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions  
are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
–4–  
REV. 0  
ADG601/ADG602  
TERMINOLOGY  
Most Positive Power Supply Potential  
Most Negative Power Supply Potential  
Positive Supply Current  
VDD  
VSS  
IDD  
ISS  
Negative Supply Current  
GND  
S
D
Ground (0 V) Reference  
Source Terminal. May be an input or output.  
Drain Terminal. May be an input or output.  
Logic Control Input  
IN  
VD (VS)  
RON  
RFLAT(ON)  
Analog Voltage on Terminals D, S  
Ohmic Resistance Between D and S  
Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured  
over the specified analog signal range.  
IS (OFF)  
Source Leakage Current with the Switch “OFF”  
I
D (OFF)  
Drain Leakage Current with the Switch “OFF”  
ID, IS (ON)  
VINL  
Channel Leakage Current with the Switch “ON”  
Maximum Input Voltage for Logic “0”  
VINH  
Minimum Input Voltage for Logic “1”  
I
INL(IINH  
)
Input Current of the Digital Input  
CS (OFF)  
CD (OFF)  
CD,CS(ON)  
CIN  
“OFF” Switch Source Capacitance. Measured with reference to ground.  
“OFF” Switch Drain Capacitance. Measured with reference to ground.  
“ON” Switch Capacitance. Measured with reference to ground.  
Digital Input Capacitance  
tON  
tOFF  
Delay Between Applying the Digital Control Input and the Output Switching On.  
Delay Between Applying the Digital Control Input and the Output Switching Off.  
A measure of the glitch impulse transferred from the digital input to the analog output during switching.  
A measure of unwanted signal coupling through an “OFF” Switch.  
Frequency Response of the “ON” Switch  
Charge Injection  
Off Isolation  
On Response  
Insertion Loss  
Loss Due to the ON Resistance of the Switch  
Typical Performance Characteristics  
5
4
3
2
1
0
10  
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
V
+5V  
5V  
DD  
T
25 C  
V
2.7V  
A
DD  
V
SS  
V
3.0V  
DD  
2.5V  
3V  
3.3V  
+85 C  
4.5V  
+25 C  
V
4.5V  
DD  
V
3.3V  
DD  
5V  
V
5.0V  
DD  
T
V
25 C  
0V  
A
40 C  
SS  
5 4 3 2 1  
0
1
2
3
4
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
, V V  
5 4 3 2 1  
0
1
2
3
4
5
V
, V V  
V
V , V V  
D
S
D
S
D S  
TPC 1. On Resistance vs. VD(VS)  
(Dual Supply)  
TPC 2. On Resistance vs. VD(VS)  
(Single Supply)  
TPC 3. On Resistance vs. VD(VS) for  
Different Temperatures (Dual Supply)  
–5–  
REV. 0  
ADG601/ADG602  
Typical Performance Characteristics (continued)  
5
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.5  
0.4  
0.3  
0.2  
0.1  
0
V
5V  
0V  
4.5V1V  
1V4.5V  
V
+5V  
5V  
ꢃ ꢁ4.5V  
ꢃ ꢅ4.5V  
DD  
DD  
V
V
V
V
V
V
SS  
SS  
+85 C  
D
S
D
S
4
I
, I (ON)  
S
I
, I (ON)  
S
D
D
3
2
0.1  
0.2  
0.3  
0.4  
0.5  
0.1  
0.2  
0.3  
0.4  
0.5  
I
(OFF)  
D
I
(OFF)  
I (OFF)  
S
+25 C  
40 C  
D
I
(OFF)  
S
1
V
5V  
0V  
DD  
V
SS  
0
0
10 20 30 40 50 60 70 80 85  
TEMPERATURE –  
0
10 20 30 40 50 60 70 80 85  
TEMPERATURE –  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
, V V  
V
C
C
D
S
TPC 4. On Resistance vs. VD(VS) for  
Different Temperatures (Single Supply)  
TPC 5. Leakage Currents vs.  
Temperature (Single Supply)  
TPC 6. Leakage Currents vs.  
Temperature (Dual Supply)  
500  
180  
0
T
25 C  
A
450  
400  
350  
300  
250  
200  
150  
100  
50  
160  
140  
120  
100  
80  
10  
20  
30  
40  
50  
60  
70  
80  
V
5V  
0V  
DD  
V
SS  
V
V
+5V  
5V  
SS  
DD  
V
+5V  
5V  
DD  
t
ON  
V
SS  
V
5V  
0V  
DD  
V
SS  
60  
t
OFF  
40  
V
+5V  
5V  
DD  
V
+5V  
5V  
DD  
V
V
5V  
0V  
V
DD  
SS  
V
20  
SS  
T 25C  
A
SS  
0
0
20  
0
20  
40  
60  
80  
40  
0.2  
1
10  
100  
5 4 3 2 1  
0
1
2
3
4
5
V
V  
TEMPERATURE C  
FREQUENCY MHz  
S
TPC 7. Charge Injection vs. Source  
Voltage  
TPC 8. tON/tOFF Times vs. Temperature  
TPC 9. Off Isolation vs. Frequency  
0
2  
4  
6  
8  
V
+5V  
5V  
DD  
10  
V
SS  
T
25 C  
A
12  
0.2  
1
10  
FREQUENCY MHz  
100  
400  
TPC 10. On Response vs. Frequency  
6–  
REV. 0  
ADG601/ADG602  
TEST CIRCUITS  
I
DS  
I
(OFF)  
A
I
(OFF)  
A
I
D
S
D
(ON)  
A
S
D
V1  
S
D
NC  
S
D
V
V
D
S
V
D
NC = NO CONNECT  
V
R
= V1/I  
DS  
S
ON  
Test Circuit 1. On Resistance  
Test Circuit 2. Off Leakage  
Test Circuit 3. On Leakage  
V
V
DD  
SS  
0.1F  
0.1F  
V
ADG601  
50%  
50%  
50%  
IN  
V
V
DD  
SS  
S
D
V
OUT  
V
ADG602  
50%  
90%  
IN  
R
300ꢀ  
C
L
35pF  
L
V
S
IN  
90%  
V
OUT  
GND  
tON  
tOFF  
Test Circuit 4. Switching Times  
V
V
SS  
DD  
V
V
DD  
SS  
V
ADG601  
IN  
OFF  
ON  
R
S
S
D
V
OUT  
V
C
L
1nF  
S
V
ADG602  
IN  
IN  
V
OUT  
V  
OUT  
GND  
Q
= C ꢈ ꢇV  
L OUT  
INJ  
Test Circuit 5. Charge Injection  
V
V
V
V
DD  
DD  
SS  
0.1F  
0.1F  
0.1F  
0.1F  
NETWORK  
ANALYZER  
NETWORK  
ANALYZER  
V
V
DD  
V
DD  
SS  
SS  
S
S
50ꢀ  
50ꢀ  
IN  
50ꢀ  
IN  
V
S
V
S
D
D
V
V
OUT  
OUT  
V
V
IN  
IN  
R
R
L
50ꢀ  
L
50ꢀ  
GND  
GND  
V
V
WITH SWITCH  
OUT  
OUT  
OFF ISOLATION = 20 LOG  
INSERTION LOSS = 20 LOG  
V
S
V
WITHOUT SWITCH  
S
Test Circuit 6. Off Isolation  
Test Circuit 7. Bandwidth  
7–  
REV. 0  
ADG601/ADG602  
OUTLINE DIMENSIONS  
Dimensions shown in inches and (mm).  
8-Lead Micro-SOIC  
(RM-8)  
0.122 (3.10)  
0.114 (2.90)  
8
5
4
0.122 (3.10)  
0.114 (2.90)  
0.199 (5.05)  
0.187 (4.75)  
1
PIN 1  
0.0256 (0.65) BSC  
0.120 (3.05)  
0.112 (2.84)  
0.120 (3.05)  
0.112 (2.84)  
0.043 (1.09)  
0.037 (0.94)  
0.006 (0.15)  
0.002 (0.05)  
33ꢂ  
0.018 (0.46)  
0.008 (0.20)  
27ꢂ  
0.028 (0.71)  
0.016 (0.41)  
0.011 (0.28)  
0.003 (0.08)  
SEATING  
PLANE  
6-Lead Plastic Mount SOT-23  
(RT-6)  
0.122 (3.10)  
0.106 (2.70)  
6
5
2
4
3
0.071 (1.80)  
0.059 (1.50)  
0.118 (3.00)  
0.098 (2.50)  
1
PIN 1  
0.037  
(0.95) BSC  
0.075  
(1.90)  
BSC  
0.051 (1.30)  
0.035 (0.90)  
0.057 (1.45)  
0.035 (0.90)  
10ꢂ  
0ꢂ  
0.020 (0.50)  
0.010 (0.25)  
0.006 (0.15)  
0.000 (0.00)  
0.022 (0.55)  
0.014 (0.35)  
SEATING  
PLANE  
0.009 (0.23)  
0.003 (0.08)  
8–  
REV. 0  

相关型号:

ADG602BRM

2 ohm CMOS +-5 V/5 V, SPST SWITCHES
ADI

ADG602BRM-REEL

Low on resistance, 2.5 OHM maximum
ADI

ADG602BRM-REEL7

Low on resistance, 2.5 OHM maximum
ADI

ADG602BRMZ

Low on resistance, 2.5 OHM maximum
ADI

ADG602BRMZ-REEL7

Low on resistance, 2.5 OHM maximum
ADI

ADG602BRT

2 ohm CMOS +-5 V/5 V, SPST SWITCHES
ADI

ADG602BRT-REEL

Low on resistance, 2.5 OHM maximum
ADI

ADG602BRT-REEL7

Low on resistance, 2.5 OHM maximum
ADI

ADG602BRTZ-REEL

Low on resistance, 2.5 OHM maximum
ADI

ADG602BRTZ-REEL7

Low on resistance, 2.5 OHM maximum
ADI

ADG602_15

SPST Switches
ADI

ADG604

1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer
ADI