ADG701BRM [ADI]
CMOS Low Voltage 2ohm SPST Switches; CMOS低压2ohm SPST开关
| 型号： | ADG701BRM |
| 厂家： | 
ADI |
| 描述： | CMOS Low Voltage 2ohm SPST Switches |
| 文件： | 总8页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS
a
Low Voltage 2 ⍀ SPST Switches
ADG701/ADG702
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
+1.8 V to +5.5 V Single Supply
2 ⍀ (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SOT-23
ADG701
S
D
IN
8-Lead SOIC Package
Fast Switching Times
tON 18 ns
tOFF 12 ns
ADG702
Typical Power Consumption (<0.01 W)
TTL/CMOS Compatible
S
D
APPLICATIONS
IN
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
SWITCHES SHOWN FOR
A LOGIC "1" INPUT
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG701/ADG702 are monolithic CMOS SPST switches.
These switches are designed on an advanced submicron process
that provides low power dissipation yet high switching speed,
low on resistance, low leakage currents and –3 dB bandwidths of
greater than 200 MHz can be achieved.
1. +1.8 V to +5.5 V Single Supply Operation. The ADG701/
ADG702 offer high performance, including low on resistance
and fast switching times and is fully specified and guaranteed
with +3 V and +5 V supply rails.
2. Very Low RON (3 Ω max at 5 V, 5 Ω max at 3 V). At 1.8 V
operation, RON is typically 40 Ω over the temperature range.
The ADG701/ADG702 can operate from a single +1.8 V to
+5.5 V supply making it ideal for use in battery powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
3. On-Resistance Flatness RFLAT(ON) (1 Ω max).
4. –3 dB Bandwidth >200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
As can be seen from the Functional Block Diagrams, with a
logic input of “1” the switch of the ADG701 is closed, while
that of the ADG702 is open. Each switch conducts equally well
in both directions when ON.
6. Fast tON/tOFF.
7. Tiny 6-Lead SOT-23 and 8-Lead µSOIC.
The ADG701/ADG702 are available in 6-lead SOT-23 and
8-lead µSOIC packages.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/326-8703
World Wide Web Site: http://www.analog.com
© Analog Devices, Inc., 1998
(VDD = 5 V ؎ 10%, GND = 0 V. All specifications –40؇C to +85؇C
unless otherwise noted.)
ADG701/ADG702–SPECIFICATIONS1
B Version
Parameter
+25؇C
–40؇C to +85؇C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance (RON
)
2
3
0.5
Ω typ
Ω max
Ω typ
Ω max
VS = 0 V to VDD, IS = –10 mA;
Test Circuit 1
VS = 0 V to VDD, IS = –10 mA
4
On-Resistance Flatness (RFLAT(ON)
)
1.0
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
VDD = +5.5 V
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = VD = 1 V, or 4.5 V;
Test Circuit 3
±0.01
±0.25
±0.01
±0.25
±0.01
±0.25
nA typ
nA max
nA typ
nA max
nA typ
nA max
±0.35
±0.35
±0.35
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.4
0.8
V min
V max
IINL or IINH
0.005
µA typ
VIN = VINL or VINH
±0.1
µA max
DYNAMIC CHARACTERISTICS2
tON
12
8
ns typ
ns max
ns typ
ns max
pC typ
RL = 300 Ω, CL = 35 pF
VS = 3 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF
VS = 3 V; Test Circuit 4
VS = 2 V, RS = 0 Ω, CL = 1 nF;
Test Circuit 5
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 6
18
12
tOFF
Charge Injection
Off Isolation
5
–55
–75
dB typ
dB typ
Bandwidth –3 dB
200
MHz typ
RL = 50 Ω, CL = 5 pF;
Test Circuit 7
CS (OFF)
CD (OFF)
CD, CS (ON)
17
17
38
pF typ
pF typ
pF typ
POWER REQUIREMENTS
V
DD = +5.5 V
Digital Inputs = 0 V or 5 V
IDD
0.001
µA typ
µA max
1.0
NOTES
1Temperature ranges are as follows: B Versions: –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
ADG701/ADG702
SPECIFICATIONS1(VDD = 3 V ؎ 10%, GND = 0 V. All specifications –40؇C to +85؇C unless otherwise noted.)
B Version
Parameter
+25؇C
–40؇C to +85؇C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
6
V
On Resistance (RON
)
3.5
5
1.5
Ω typ
Ω max
Ω typ
VS = 0 V to VDD, IS = –10 mA;
Test Circuit 1
VS = 0 V to VDD, IS = –10 mA
On-Resistance Flatness (RFLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
VDD = +3.3 V
VS = 3 V/1 V, VD = 1 V/3 V;
Test Circuit 2
VS = 3 V/1 V, VD = 1 V/3 V;
Test Circuit 2
VS = VD = 1 V, or 3 V;
Test Circuit 3
±0.01
±0.25
±0.01
±0.25
±0.01
±0.25
nA typ
nA max
nA typ
nA max
nA typ
nA max
±0.35
±0.35
±0.35
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.0
0.4
V min
V max
IINL or IINH
0.005
µA typ
VIN = VINL or VINH
±0.1
µA max
DYNAMIC CHARACTERISTICS2
tON
14
8
ns typ
ns max
ns typ
ns max
pC typ
RL = 300 Ω, CL = 35 pF
VS = 2 V, Test Circuit 4
RL = 300 Ω, CL = 35 pF
VS = 2 V, Test Circuit 4
VS = 1.5 V, RS = 0 Ω, CL = 1 nF;
Test Circuit 5
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 6
20
13
tOFF
Charge Injection
Off Isolation
4
–55
–75
dB typ
dB typ
Bandwidth –3 dB
200
MHz typ
RL = 50 Ω, CL = 5 pF;
Test Circuit 7
CS (OFF)
CD (OFF)
CD, CS (ON)
17
17
38
pF typ
pF typ
pF typ
POWER REQUIREMENTS
V
DD = +3.3 V
Digital Inputs = 0 V or 3 V
IDD
0.001
µA typ
µA max
1.0
NOTES
1Temperature ranges are as follows: B Versions: –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–3–
ADG701/ADG702
ABSOLUTE MAXIMUM RATINGS1
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.
(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog, Digital Inputs2 . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Operating Temperature Range
Table I. Truth Table
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W
SOT-23 Package, Power Dissipation . . . . . . . . . . . . . . 282 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99°C/W
Lead Temperature, Soldering
ADG701 In
ADG702 In
Switch Condition
0
1
1
0
OFF
ON
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
ORDERING GUIDE
Model
Temperature Range
Brand*
Package Descriptions
Package Options
ADG701BRT
ADG702BRT
ADG701BRM
ADG702BRM
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
S3B
S4B
S3B
S4B
SOT-23 (Plastic Surface Mount)
SOT-23 (Plastic Surface Mount)
µSOIC (Small Outline)
RT-6
RT-6
RM-8
RM-8
µSOIC (Small Outline)
*Brand = Due to package size limitations, these three characters represent the part number.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG701/ADG702 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. A
ADG701/ADG702
PIN CONFIGURATIONS
TERMINOLOGY
8-Lead SOIC
VDD
GND
S
D
IN
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
(RM-8)
1
2
3
4
8
7
6
5
S
D
NC
NC
ADG701/
ADG702
GND
IN
TOP VIEW
(Not to Scale)
RON
RFLAT(ON)
Ohmic Resistance Between D and S.
V
NC
DD
Flatness is defined as the difference between
the maximum and minimum value of on
resistance as measured over the specified
analog signal range.
Source Leakage Current with the Switch “OFF.”
Drain Leakage Current with the Switch “OFF.”
Channel Leakage Current with the Switch “ON.”
Analog Voltage on Terminals D, S.
“OFF” Switch Source Capacitance.
“OFF” Switch Drain Capacitance.
“ON” Switch Capacitance.
Delay between applying the digital control
input and the output switching on. See Test
Circuit 4.
NC = NO CONNECT
6-Lead Plastic Surface Mount (SOT-23)
(RT-6)
IS (OFF)
I
D (OFF)
ID, IS (ON)
VD (VS)
CS (OFF)
CD (OFF)
CD, CS (ON)
tON
1
2
3
6
5
4
V
DD
D
S
ADG701/
ADG702
TOP VIEW
NC
IN
GND
(Not to Scale)
NC = NO CONNECT
tOFF
Delay between applying the digital control
input and the output switching off.
Off Isolation
A measure of Unwanted Signal Coupling
Through an “OFF” Switch.
Charge
Injection
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
Bandwidth
The frequency at which the output is attenu-
ated by –3 dBs.
On Response
On Loss
The frequency response of the “ON” switch.
The voltage drop across the “ON” switch seen
on the On Response vs. Frequency plot as how
many dBs the signal is away from 0 dB at very
low frequencies.
REV. A
–5–
ADG701/ADG702–Typical Performance Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10m
V
= 2.7V
T
= 25 C
DD
V
= +5V
DD
A
1m
100
10
1
V
= 3.0V
DD
V
= 4.5V
DD
V
= 5.0V
DD
100n
10n
1n
0
0.5
1.0
1.5
2.0 2.5
3.0
3.5
4.0
4.5
5.0
10
100
1k
10k
100k
1M
10M
FREQUENCY – Hz
V
OR V – DRAIN OR SOURCE VOLTAGE – V
D
S
Figure 1. On Resistance as a Function of VD (VS) Single
Supplies
Figure 4. Supply Current vs. Input Switching Frequency
3.5
–10
V
= +3V
DD
V
= +5V, +3V
–20
–30
–40
–50
–60
DD
3.0
2.5
2.0
1.5
1.0
0.5
0
+85؇C
+25؇C
–40؇C
–70
–80
–90
–100
–110
0
0.5
1.0
1.5
2.0
2.5
3.0
10k
100k
1M
10M
100M
FREQUENCY – Hz
V
OR V – DRAIN OR SOURCE VOLTAGE – V
D
S
Figure 2. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
Figure 5. Off Isolation vs. Frequency
0
3.5
V
= +5V
DD
V
= +3V
3.0
2.5
2.0
1.5
DD
–2
–4
–6
+85؇C
+25؇C
–40؇C
1.0
0.5
0
0
0.5
1.0
1.5
2.0 2.5
3.0
3.5
4.0
4.5
5.0
10k
100k
1M
10M
100M
FREQUENCY – Hz
V
OR V – DRAIN OR SOURCE VOLTAGE – V
D
S
Figure 3. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V
Figure 6. On Response vs. Frequency
–6–
REV. A
ADG701/ADG702
Test Circuits
I
DS
V1
I
(OFF)
A
I
(OFF)
A
I
D
(ON)
A
S
D
S
D
S
D
S
D
V
R
= V1/I
V
V
V
V
D
S
ON
DS
S
D
S
Test Circuit 1. On Resistance
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
V
DD
0.1F
ADG701
V
V
50%
50%
50%
IN
IN
V
DD
V
L
OUT
S
D
50%
90%
ADG702
R
C
L
V
S
35pF
300⍀
IN
90%
V
OUT
GND
tOFF
tON
Test Circuit 4. Switching Times
V
V
DD
DD
V
ADG701
IN
ON
OFF
V
R
OUT
S
S
D
V
C
L
1nF
S
V
IN
ADG702
IN
V
OUT
⌬V
OUT
GND
Q
= C
؋
⌬V INJ
L
OUT
Test Circuit 5. Charge Injection
V
DD
0.1F
V
DD
0.1F
V
DD
V
DD
V
OUT
S
D
V
OUT
S
D
R
L
50⍀
IN
R
L
V
50⍀
IN
IN
V
S
GND
V
IN
V
S
GND
Test Circuit 6. Off Isolation
Test Circuit 7. Bandwidth
REV. A
–7–
ADG701/ADG702
APPLICATIONS INFORMATION
The ADG701/ADG702 belongs to Analog Devices’ new fam-
ily of CMOS switches. This series of general purpose switches
have improved switching times, lower on resistance, higher
bandwidth, low power consumption and low leakage currents.
The signal transfer characteristic is dependent on the switch
channel capacitance, CDS. This capacitance creates a frequency
zero in the numerator of the transfer function A(s). Because the
switch on resistance is small, this zero usually occurs at high
frequencies. The bandwidth is a function of the switch output
capacitance combined with CDS and the load capacitance. The
frequency pole corresponding to these capacitances appears in
the denominator of A(s).
ADG701/ADG702 Supply Voltages
Functionality of the ADG701/ADG702 extends from +1.8 V to
+5.5 V single supply, which makes it ideal for battery powered
instruments, where important design parameters are power
efficiency and performance.
The dominant effect of the output capacitance, CD, causes the
pole breakpoint frequency to occur first. Therefore, in order to
maximize bandwidth a switch must have a low input and output
capacitance and low on resistance. The On Response vs. Fre-
quency plot for the ADG701/ADG702 can be seen in Figure 6.
It is important to note that the supply voltage effects the input
signal range, the on resistance and the switching times of the
part. By taking a look at the typical performance characteristics
and the specifications, the effects of the power supplies can be
clearly seen.
Off Isolation
Off isolation is a measure of the input signal coupled through an
off switch to the switch output. The capacitance, CDS, couples
the input signal to the output load, when the switch is off, as
shown in Figure 8.
For VDD = +1.8 V operation, RON is typically 40 Ω over the
temperature range.
On Response vs. Frequency
C
DS
Figure 7 illustrates the parasitic components that affect the ac
performance of CMOS switches (the switch is shown surrounded
by a box). Additional external capacitances will further degrade
some performance. These capacitances affect feedthrough,
crosstalk and system bandwidth.
S
D
V
OUT
C
C
R
D
LOAD
LOAD
V
IN
C
Figure 8. Off Isolation Is Affected by External Load Resis-
tance and Capacitance
DS
S
D
V
OUT
R
The larger the value of CDS, larger values of feedthrough will be
produced. The typical performance characteristic graph of Fig-
ure 5 illustrates the drop in off-isolation as a function of fre-
quency. From dc to roughly 1 MHz, the switch shows better
than –75 dB isolation. Up to frequencies of 10 MHz, the off
isolation remains better than –55 dB. As the frequency increases,
more and more of the input signal is coupled through to the
output. Off-isolation can be maximized by choosing a switch
with the smallest CDS as possible. The values of load resistance
and capacitance affect off isolation also, as they contribute to
the coefficients of the poles and zeros in the transfer function of
the switch when open.
ON
C
C
R
D
LOAD
LOAD
V
IN
Figure 7. Switch Represented by Equivalent Parasitic
Components
The transfer function that describes the equivalent diagram of
the switch (Figure 7) is of the form (A)s shown below.
s(RON
CDS ) +1
A(s) = RT
s(RON CT RT ) +1
where:
CT = CLOAD + CD + CDS
RT = RLOAD/(RLOAD + RON
s(RLOAD CDS
s(RLOAD )(CT ) +1
)
A(s) =
)
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead SOIC
(RM-8)
6-Lead Plastic Surface Mount (SOT-23)
(RT-6)
0.122 (3.10)
0.114 (2.90)
0.122 (3.10)
0.106 (2.70)
8
1
5
4
6
1
5
2
4
3
0.071 (1.80)
0.059 (1.50)
0.118 (3.00)
0.098 (2.50)
0.199 (5.05)
0.187 (4.75)
0.122 (3.10)
0.114 (2.90)
PIN 1
PIN 1
0.037 (0.95) BSC
0.0256 (0.65) BSC
0.120 (3.05)
0.075 (1.90)
BSC
0.120 (3.05)
0.112 (2.84)
0.112 (2.84)
0.051 (1.30)
0.035 (0.90)
0.057 (1.45)
0.035 (0.90)
0.043 (1.09)
0.037 (0.94)
0.006 (0.15)
0.002 (0.05)
33°
27°
10؇
0؇
0.018 (0.46)
0.020 (0.50)
0.010 (0.25)
0.022 (0.55)
0.014 (0.35)
0.028 (0.71)
0.016 (0.41)
0.006 (0.15)
0.000 (0.00)
0.011 (0.28)
0.003 (0.08)
SEATING
PLANE
SEATING
PLANE
0.009 (0.23)
0.003 (0.08)
0.008 (0.20)
–8–
REV. A
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