ADG719-EP [ADI]

CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23; CMOS 1.8 V至5.5 V , 2.5升© 2 : 1多路复用器,采用SOT -23 / SPDT开关
ADG719-EP
型号: ADG719-EP
厂家: ADI    ADI
描述:

CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23
CMOS 1.8 V至5.5 V , 2.5升© 2 : 1多路复用器,采用SOT -23 / SPDT开关

复用器 开关 光电二极管
文件: 总12页 (文件大小:271K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CMOS 1.8 V to 5.5 V, 2.5 Ω  
2:1 Mux/SPDT Switch in SOT-23  
ADG719-EP  
FUNCTIONAL BLOCK DIAGRAM  
FEATURES  
1.8 V to 5.5 V single supply  
4 Ω (max) on resistance  
0.75 Ω (typ) on resistance flatness  
−3 dB bandwidth > 200 MHz  
Rail-to-rail operation  
ADG719-EP  
S2  
D
S1  
IN  
6-lead SOT-23 package  
Fast switching times:  
NOTES  
1. SWITCHES SHOWN  
FOR A LOGIC 1 INPUT.  
t
t
ON = 12 ns  
OFF = 6 ns  
Figure 1.  
Typical power consumption: (< 0.01 μW)  
TTL/CMOS compatible  
Military temperature range: −55°C to +125°C  
APPLICATIONS  
Battery-powered systems  
Communication systems  
Sample-and-hold systems  
Audio signal routing  
Video switching  
Mechanical reed relay replacement  
GENERAL DESCRIPTION  
PRODUCT HIGHLIGHTS  
The ADG719-EP is a monolithic CMOS SPDT switch. This  
switch is designed on a submicron process that provides low  
power dissipation yet gives high switching speed, low on  
resistance, and low leakage currents.  
1. Supports defense and aerospace applications  
(AQEC standard).  
2. Military temperature range: −55°C to +125°C.  
3. Controlled manufacturing baseline.  
4. One assembly and test site.  
5. One fabrication site.  
6. Enhanced product change notification.  
7. Qualification data available on request.  
The ADG719-EP can operate from a single-supply range of 1.8 V  
to 5.5 V, making it ideal for use in battery-powered instruments  
and with the new generation of DACs and ADCs from Analog  
Devices, Inc.  
Each switch of the ADG719-EP conducts equally well in both  
directions when on. The ADG719-EP exhibits break-before-  
make switching action.  
Because of the advanced submicron process, −3 dB bandwidths  
of greater than 200 MHz can be achieved.  
The ADG719-EP is available in a 6-lead SOT-23 package.  
Full details about this enhanced product are available in the  
ADG719 data sheet, which should be consulted in conjunction  
with this data sheet.  
Rev. 0  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2010 Analog Devices, Inc. All rights reserved.  
 
ADG719-EP  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
Absolute Maximum Ratings ............................................................5  
ESD Caution...................................................................................5  
Pin Configuration and Function Descriptions..............................6  
Typical Performance Characteristics ..............................................7  
Test Circuits........................................................................................9  
Outline Dimensions....................................................................... 11  
Ordering Guide .......................................................................... 11  
Applications....................................................................................... 1  
Functional Block Diagram .............................................................. 1  
General Description......................................................................... 1  
Product Highlights ........................................................................... 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
REVISION HISTORY  
4/10—Revision 0: Initial Version  
Rev. 0 | Page 2 of 12  
 
ADG719-EP  
SPECIFICATIONS  
VDD = 5 V 10%, GND = 0 V.  
Table 1.  
Parameter  
+25°C  
−55°C to +125°C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
7
V
On Resistance (RON  
)
2.5  
4
0.1  
Ω typ  
Ω max  
Ω typ  
VS = 0 V to VDD, IS = −10 mA;  
see Figure 13  
VS = 0 V to VDD, IS = −10 mA  
On Resistance Match Between  
Channels (ΔRON  
)
0.4  
1.5  
Ω max  
Ω typ  
Ω max  
On Resistance Flatness (RFLAT(ON)  
)
0.75  
VS = 0 V to VDD, IS = −10 mA  
LEAKAGE CURRENTS IS (Off)  
Source Off Leakage  
VDD = 5.5 V  
VS = 4.5 V/1 V, VD = 1 V/4.5 V;  
see Figure 14  
VS = VD = 1 V or VS = VD = 4.5 V;  
see Figure 15  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
1
5
Channel On Leakage ID, IS (On)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.4  
0.8  
V min  
V max  
IINL or IINH  
0.005  
μA typ  
VIN = VINL or VINH  
0.1  
μA max  
DYNAMIC CHARACTERISTICS1  
tON  
7
3
8
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
dB typ  
dB typ  
RL = 300 Ω, CL = 35 pF  
VS = 3 V; see Figure 16  
RL = 300 Ω, CL = 35 pF  
VS = 3 V; see Figure 16  
12  
6
tOFF  
Break-Before-Make Time Delay, tD  
Off Isolation  
RL = 300 Ω, CL = 35 pF,  
1
VS1 = VS2 = 3 V; see Figure 17  
RL = 50 Ω, CL = 5 pF, f = 10 MHz  
RL = 50 Ω, CL = 5 pF, f = 1 MHz;  
see Figure 18  
−67  
−87  
Channel-to-Channel Crosstalk  
−62  
−82  
dB typ  
dB typ  
RL = 50 Ω, CL = 5 pF, f = 10 MHz  
RL = 50 Ω, CL = 5 pF, f = 1 MHz;  
see Figure 19  
Bandwidth −3 dB  
CS (Off)  
CD, CS (On)  
200  
7
27  
MHz typ  
pF typ  
pF typ  
RL = 50 Ω, CL = 5 pF; see Figure 20  
POWER REQUIREMENTS  
VDD = 5.5 V  
Digital inputs = 0 V or 5.5 V  
IDD  
0.001  
μA typ  
1.0  
μA max  
1 Guaranteed by design, not subject to production test.  
Rev. 0 | Page 3 of 12  
 
ADG719-EP  
VDD = 3 V 10%, GND = 0 V.  
Table 2.  
Parameter  
+25°C  
−55°C to +125°C  
Unit  
Test Conditions/Comments  
ANALOG SWITCH  
Analog Signal Range  
0 V to VDD  
V
On Resistance (RON  
)
6
Ω typ  
Ω max  
Ω typ  
VS = 0 V to VDD, IS = −10 mA;  
see Figure 13  
VS = 0 V to VDD, IS = −10 mA  
12  
On Resistance Match Between  
Channels (ΔRON  
0.1  
)
0.4  
2.5  
Ω max  
Ω typ  
On Resistance Flatness (RFLAT(ON)  
)
VS = 0 V to VDD, IS = −10 mA  
VDD = 3.3 V  
LEAKAGE CURRENTS  
Source Off Leakage IS (Off)  
0.01  
0.25  
0.01  
0.25  
nA typ  
nA max  
nA typ  
nA max  
VS = 3 V/1 V, VD = 1 V/3 V;  
see Figure 14  
VS = VD = 1 V or VS = VD = 3 V;  
see Figure 15  
1
5
Channel On Leakage ID, IS (On)  
DIGITAL INPUTS  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.0  
0.8  
V min  
V max  
IINL or IINH  
0.005  
μA typ  
VIN = VINL or VINH  
0.1  
μA max  
DYNAMIC CHARACTERISTICS1  
tON  
10  
4
ns typ  
ns max  
ns typ  
ns max  
ns typ  
ns min  
dB typ  
dB typ  
RL = 300 Ω, CL = 35 pF  
VS = 2 V; see Figure 16  
RL = 300 Ω, CL = 35 pF  
VS = 2 V; see Figure 16  
15  
8
tOFF  
Break-Before-Make Time Delay, tD  
Off Isolation  
8
RL = 300 Ω, CL = 35 pF  
1
VS1 = VS2 = 2 V; see Figure 17  
RL = 50 Ω, CL = 5 pF, f = 10 MHz  
RL = 50 Ω, CL = 5 pF, f = 1 MHz;  
see Figure 18  
−67  
−87  
Channel-to-Channel Crosstalk  
−62  
−82  
dB typ  
dB typ  
RL = 50 Ω, CL = 5 pF, f = 10 MHz  
RL = 50 Ω, CL = 5 pF, f = 1 MHz;  
see Figure 19  
Bandwidth −3 dB  
CS (Off)  
CD, CS (On)  
200  
7
27  
MHz typ  
pF typ  
pF typ  
RL = 50 Ω, CL = 5 pF; see Figure 20  
POWER REQUIREMENTS  
VDD = 3.3 V  
Digital inputs = 0 V or 3.3 V  
IDD  
0.001  
1.0  
μA typ  
μA max  
1 Guaranteed by design, not subject to production test.  
Rev. 0 | Page 4 of 12  
ADG719-EP  
ABSOLUTE MAXIMUM RATINGS  
TA = 25°C, unless otherwise noted.  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Table 3.  
Parameter  
Rating  
VDD to GND  
Analog, Digital Inputs1  
−0.3 V to +7 V  
−0.3 V to VDD + 0.3 V or  
30 mA, whichever occurs  
first  
Only one maximum rating may be applied at any one time.  
Peak Current, S or D  
100 mA  
(Pulsed at 1 ms, 10% duty  
cycle max)  
30 mA  
ESD CAUTION  
Continuous Current, S or D  
Operating Temperature Range  
Storage Temperature Range  
Junction Temperature  
SOT-23 Package  
−55°C to +125°C  
−65°C to +150°C  
150°C  
θJA Thermal Impedance2  
186.45°C/W  
Lead Soldering  
Reflow, Peak Temperature  
Time at Peak Temperature  
ESD  
260(+0/−5)°C  
20 sec to 40 sec  
1 kV  
1Overvoltages at IN, S, or D will be clamped by internal diodes. Current should  
be limited to the maximum ratings given  
2Measured on a 4-layer board.  
Rev. 0 | Page 5 of 12  
 
ADG719-EP  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
IN  
1
2
3
6
5
4
S2  
ADG719-EP  
V
D
TOP VIEW  
DD  
(Not to Scale)  
GND  
S1  
Figure 2. 6-Lead SOT-23 Pin Configuration  
Table 4. Pin description  
Pin No.  
Mnemonic  
Description  
1
2
3
4
5
6
IN  
Digital Switch Control Pin.  
Most Positive Power Supply Pin.  
Ground (0 V) Reference Pin.  
Source Terminal. Can be used as an input or output.  
Drain Terminal. Can be used as an input or output.  
Source Terminal. Can be used as an input or output.  
VDD  
GND  
S1  
D
S2  
Table 5. Truth Table  
ADG719-EP IN  
Switch S1  
On  
Off  
Switch S2  
0
1
Off  
On  
Rev. 0 | Page 6 of 12  
 
ADG719-EP  
TYPICAL PERFORMANCE CHARACTERISTICS  
6.0  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0
T
= 25°C  
V
= 3.3V  
DD  
V
= 2.7V  
A
DD  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
V
= 4.5V  
DD  
V
= 3.0V  
DD  
V
= 5.0V  
DD  
I , I (ON)  
S
D
I
(OFF)  
S
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
–30 –20 –10  
0
10 20 30 40 50 60 70 80 90 100 110 120  
TEMPERATURE (°C)  
DRAIN OR SOURCE VOLTAGE (V)  
Figure 3. On Resistance vs. VD (VS), Single Supplies  
Figure 6. Leakage Currents vs. Temperature  
6
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
V
= 3V  
V
= 5.5V  
DD  
DD  
T
= +125°C  
= +85°C  
A
T
A
T
= +25°C  
A
T
= –40°C  
A
T
= –55°C  
A
I , I (ON)  
S
D
I
(OFF)  
S
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
–30 –20 –10  
0
10 20 30 40 50 60 70 80 90 100 110 120  
TEMPERATURE (°C)  
DRAIN OR SOURCE VOLTAGE (V)  
Figure 4. On Resistance vs. VD (VS) for Different Temperatures, VDD = 3 V  
Figure 7. Leakage Currents vs. Temperature  
10m  
1m  
4.5  
V
= 5V  
DD  
V
= 5V  
DD  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
T
= +125°C  
= +85°C  
A
100µ  
10µ  
1µ  
T
A
T
T
T
= +25°C  
= –40°C  
= –55°C  
A
A
A
100n  
10n  
1n  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
100M  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
FREQUENCY (Hz)  
DRAIN OR SOURCE VOLTAGE (V)  
Figure 5. On Resistance vs. VD (VS) for Different Temperatures, VDD = 5 V  
Figure 8. Supply Current vs. Input Switching Frequency  
Rev. 0 | Page 7 of 12  
 
ADG719-EP  
–30  
0
–2  
–4  
–6  
V
= 5V, 3V  
V
= 5V  
DD  
DD  
–40  
–50  
–60  
–70  
–80  
–90  
–100  
–110  
–120  
–130  
10k  
100k  
1M  
10M  
100M  
10k  
100k  
1M  
10M  
100M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 9. Off Isolation vs. Frequency  
Figure 11. On Response vs. Frequency  
–30  
–40  
12  
V
= 5V, 3V  
DD  
10  
8
–50  
–60  
6
–70  
V
= 5V  
DD  
–80  
4
–90  
2
–100  
–110  
–120  
–130  
0
V
= 5V  
DD  
–2  
–4  
0
1
2
3
4
5
10k  
100k  
1M  
10M  
100M  
V
(V)  
FREQUENCY (Hz)  
S
Figure 10. Crosstalk vs. Frequency  
Figure 12. Charge Injection vs. Source Voltage  
Rev. 0 | Page 8 of 12  
ADG719-EP  
TEST CIRCUITS  
I
DS  
V1  
I
(ON)  
A
I
(OFF)  
A
I
(OFF)  
A
D
S
D
S
R
D
S
D
S
D
V
V
D
V
V
V
D
S
S
S
= V1/I  
ON  
DS  
Figure 15. On Leakage  
Figure 14. Off Leakage  
Figure 13. On Resistance  
V
V
DD  
0.1µF  
V
IN  
50%  
50%  
DD  
90%  
90%  
S
D
V
V
OUT  
OUT  
IN  
R
L
C
L
V
S
300  
35pF  
GND  
tON  
tOFF  
Figure 16. Switching Times  
V
DD  
0.1µF  
V
IN  
50%  
50%  
V
DD  
0V  
S1  
V
V
S1  
S2  
D2  
D
V
OUT  
50%  
50%  
S2  
IN  
R
V
C
L2  
300  
OUT  
L2  
35pF  
0V  
tD  
tD  
V
GND  
IN  
Figure 17. Break-Before-Make Time Delay, tD  
Rev. 0 | Page 9 of 12  
 
 
 
 
 
ADG719-EP  
V
V
DD  
DD  
0.1µF  
NETWORK  
ANALYZER  
S
50  
IN  
V
50Ω  
S
D
V
OUT  
V
IN  
R
L
50Ω  
GND  
V
OUT  
OFF ISOLATION = 20 LOG  
V
S
Figure 18. Off Isolation  
V
DD  
0.1µF  
NETWORK  
ANALYZER  
V
DD  
S1  
V
OUT  
R
L
50  
D
S2  
R
50Ω  
50Ω  
IN  
V
S
GND  
CHANNEL-TO-CHANNEL  
V
OUT  
CROSSTALK = 20 LOG  
V
S
Figure 19. Channel-to-Channel Crosstalk  
V
V
DD  
DD  
0.1µF  
NETWORK  
ANALYZER  
S
50  
IN  
V
S
D
V
OUT  
V
IN  
R
50Ω  
L
GND  
V
WITH SWITCH  
OUT  
INSERTION LOSS = 20 LOG  
V
WITHOUT SWITCH  
OUT  
Figure 20. Bandwidth  
Rev. 0 | Page 10 of 12  
 
 
 
ADG719-EP  
OUTLINE DIMENSIONS  
3.00  
2.90  
2.80  
6
1
5
2
4
3
3.00  
2.80  
2.60  
1.70  
1.60  
1.50  
PIN 1  
INDICATOR  
0.95 BSC  
1.90  
BSC  
1.30  
1.15  
0.90  
0.20 MAX  
0.08 MIN  
1.45 MAX  
0.95 MIN  
0.55  
0.45  
0.35  
0.15 MAX  
0.05 MIN  
10°  
4°  
0°  
SEATING  
PLANE  
0.60  
BSC  
0.50 MAX  
0.30 MIN  
COMPLIANT TO JEDEC STANDARDS MO-178-AB  
Figure 21. 6-Lead Small Outline Transistor Package [SOT-23]  
(RJ-6)  
Dimensions shown in millimeters  
ORDERING GUIDE  
Model1  
ADG719SRJZ-EP-RL7  
Temperature Range  
−55°C to +125°C  
Package Description  
Package Option  
Branding  
6-Lead SOT-23  
RJ-6  
S3T  
1 Z = RoHS Compliant Part.  
Rev. 0 | Page 11 of 12  
 
ADG719-EP  
NOTES  
©2010 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D08842-0-4/10(0)  
Rev. 0 | Page 12 of 12  

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