ADG784 [ADI]
CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package; CMOS 3 V / 5 V ，宽带四路2 ： 1多路复用器中的芯片级封装
| 型号： | ADG784 |
| 厂家： | 
ADI |
| 描述： | CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package |
| 文件： | 总8页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS 3 V/5 V, Wide Bandwidth Quad 2:1
Mux in Chip Scale Package
a
ADG784
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Low Insertion Loss and On Resistance: 4 ꢀ Typical
On-Resistance Flatness <2 ꢀ
Bandwidth >200 MHz
Single 3 V/5 V Supply Operation
Rail-to-Rail Operation
ADG784
S1A
D1
D2
D3
D4
S1B
S2A
Very Low Distortion: <1%
Low Quiescent Supply Current (100 nA Typical)
Fast Switching Times
tON 10 ns
S2B
S3A
S3B
S4A
t
OFF 4 ns
TTL/CMOS Compatible
For Functionally Equivalent Devices in 16-Lead QSOP/
SOIC Packages, See ADG774
S4B
1-OF-2
DECODER
APPLICATIONS
100VG-AnyLAN
Token Ring 4 Mbps/16 Mbps
ATM25/155
IN
EN
NIC Adapter and Hubs
Audio and Video Switching
Relay Replacement
These switches conduct equally well in both directions when
ON, and have an input signal range that extends to the sup-
plies. In the OFF condition, signal levels up to the supplies
are blocked. The ADG784 switches exhibit break-before-
make switching action.
GENERAL DESCRIPTION
The ADG784 is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet gives
high switching speed and low on resistance. The on-resistance
variation is typically less than 0.5 Ω with an input signal ranging
from 0 V to 5 V.
PRODUCT HIGHLIGHTS
1. Also Available as ADG774 in 16-Lead QSOP and SOIC.
The bandwidth of the ADG784 is greater than 200 MHz and
this, coupled with low distortion (typically 0.5%), makes the
part suitable for switching fast ethernet signals.
2. Wide Bandwidth Data Rates >200 MHz.
3. Ultralow Power Dissipation.
The on-resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when switch-
ing audio signals. Fast switching speed, coupled with high signal
bandwidth, also makes the parts suitable for video signal switch-
ing. CMOS construction ensures ultralow power dissipation
making the parts ideally suited for portable and battery powered
instruments.
4. Extended Signal Range.
The ADG784 is fabricated on a CMOS process giving an
increased signal range that fully extends to the supply rails.
5. Low Leakage over Temperature.
6. Break-Before-Make Switching.
This prevents channel shorting when the switches are config-
ured as a multiplexer.
The ADG784 operates from a single 3.3 V/5 V supply and is
TTL logic compatible. The control logic for each switch is shown
in the Truth Table.
7. Crosstalk is typically –70 dB @ 30 MHz.
8. Off isolation is typically –60 dB @ 10 MHz.
9. Available in Chip Scale Package (CSP).
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, norforanyinfringementsofpatentsorotherrightsofthirdpartiesthat
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/326-8703
www.analog.com
© Analog Devices, Inc., 2001
ADG784–SPECIFICATIONS
(V = 5 V ꢂ 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
SINGLE SUPPLY
DD
B Version
TMIN to
Parameter
25ꢁC
TMAX
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
5
V
On Resistance (RON
)
2.2
Ω typ
Ω max
VD = 0 V to VDD, IS = –10 mA
On Resistance Match Between
Channels (∆RON
)
0.15
Ω typ
Ω max
Ω typ
Ω max
VD = 0 V to VDD, IS = –10 mA
VD = 0 V to VDD; IS = –10 mA
0.5
1
On Resistance Flatness (RFLAT(ON)
)
0.5
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
0.01
0.5
0.01
0.5
0.01
0.5
nA typ
nA max
nA typ
nA max
nA typ
nA max
VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;
Test Circuit 2
VD = 4.5 V, VS = 1 V; VD = 1 V, VS = 4.5 V;
Test Circuit 2
1
1
1
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
VD = VS = 4.5 V; VD = VS = 1 V; Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.4
0.8
V min
V max
IINL or IINH
0.001
µA typ
µA max
VIN = VINL or VINH
0.5
DYNAMIC CHARACTERISTICS2
tON
10
20
4
8
5
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
RL = 100 Ω, CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 100 Ω, CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 100 Ω, CL = 35 pF,
tOFF
Break-Before-Make Time Delay, tD
1
VS1 = VS2 = 5 V; Test Circuit 5
Off Isolation
–65
–75
240
0.5
10
10
20
30
RL = 100 Ω, f = 10 MHz; Test Circuit 7
RL = 100 Ω, f = 10 MHz; Test Circuit 8
RL = 100 Ω; Test Circuit 6
RL = 100 Ω
CL = 1 nF; Test Circuit 9
f = 1 kHz
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
CS (OFF)
CD (OFF)
CD, CS (ON)
f = 1 kHz
f = 1 MHz
POWER REQUIREMENTS
VDD = 5.5 V
Digital Inputs = 0 V or VDD
IDD
1
µA max
µA typ
0.001
IIN
IO
1
100
µA typ
VIN = 5 V
VS/VD = 0 V
mA max
NOTES
1Temperature ranges are as follows: B Version, –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
ADG784
(VDD = 3 V ꢂ 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
SINGLE SUPPLY
B Version
T
TMAX
MIN to
Parameter
25ꢁC
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
10
V
On Resistance (RON
)
4
Ω typ
Ω max
VD = 0 V to VDD, IS = –10 mA
On Resistance Match Between
Channels (∆RON
)
0.15
Ω typ
Ω max
Ω typ
Ω max
VD = 0 V to VDD, IS = –10 mA
VD = 0 V to VDD, IS = –10 mA
0.5
4
On Resistance Flatness (RFLAT(ON)
)
2
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
0.01
0.5
0.01
0.5
0.01
0.5
nA typ
nA max
nA typ
nA max
nA typ
nA max
VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V;
Test Circuit 2
VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V;
Test Circuit 2
VD = VS = 3 V; VD = VS = 1 V; Test Circuit 3
1
1
1
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.0
0.4
V min
V max
IINL or IINH
0.001
µA typ
µA max
VIN = VINL or VINH
0.5
DYNAMIC CHARACTERISTICS2
tON
12
25
5
10
5
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
RL = 100 Ω, CL = 35 pF,
VS = 1.5 V; Test Circuit 4
RL = 100 Ω, CL = 35 pF,
VS = 1.5 V; Test Circuit 4
RL = 100 Ω, CL = 35 pF,
VS1 = VS2 = 3 V; Test Circuit 5
RL = 50 Ω, f = 10 MHz; Test Circuit 7
RL = 50 Ω, f = 10 MHz; Test Circuit 8
RL = 50 Ω; Test Circuit 6
RL = 50 Ω
tOFF
Break-Before-Make Time Delay, tD
1
Off Isolation
–65
–75
240
2
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
CS (OFF)
CD (OFF)
CD, CS (ON)
3
CL = 1 nF; Test Circuit 9
f = 1 kHz
10
20
30
f = 1 kHz
f = 1 MHz
POWER REQUIREMENTS
VDD = 3.3 V
Digital Inputs = 0 V or VDD
IDD
1
µA max
µA typ
0.001
IIN
IO
1
100
µA typ
VIN = 3 V
VS/VD = 0 V
mA max
NOTES
1Temperature ranges are as follows: B Version, –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
Table I. Truth Table
EN
IN
D1
D2
D3
D4
Function
1
0
0
X
0
1
Hi-Z
S1A
S1B
Hi-Z
S2A
S2B
Hi-Z
S3A
S3B
Hi-Z
S4A
S4B
DISABLE
IN = 0
IN = 1
–3–
REV. 0
ADG784
ABSOLUTE MAXIMUM RATINGS1
TERMINOLOGY
(TA = 25°C unless otherwise noted.)
VDD
GND
S
D
IN
EN
RON
∆RON
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Logic Control Input.
Ohmic resistance between D and S.
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Chip Scale Package
On Resistance match between any two channels
i.e., RON max – RON min.
Flatness is defined as the difference between
the maximum and minimum value of on resis-
tance as measured over the specified analog
signal range.
RFLAT(ON)
θ
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 32°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
IS (OFF)
D (OFF)
Source Leakage Current with the switch “OFF.”
Drain Leakage Current with the switch “OFF.”
I
NOTES
ID, IS (ON) Channel Leakage Current with the switch “ON.”
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
VD (VS)
CS (OFF)
CD (OFF)
Analog Voltage on Terminals D, S.
“OFF” Switch Source Capacitance.
“OFF” Switch Drain Capacitance.
CD, CS (ON) “ON” Switch Capacitance.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
tON
tOFF
tD
Delay between applying the digital control input
and the output switching on. See Test Circuit 4.
Delay between applying the digital control input
and the output switching Off.
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5.
PIN CONFIGURATION
PIN 1
15 S4A
14 S4B
13 D4
S1A 1
S1B 2
D1 3
S2A 4
S2B 5
INDICATOR
Crosstalk
A measure of unwanted signal that is coupled
through from one channel to another as a result
of parasitic capacitance.
ADG784
TOPVIEW
12 S3A
11 S3B
Off Isolation A measure of unwanted signal coupling through an
“OFF” switch.
NC = NO CONNECT
Bandwidth
Frequency response of the switch in the ON
state measured at 3 dB down.
NOTE: EXPOSED PADTIEDTO SUBSTRATE, GND.
Distortion
RFLAT(ON)/RL
ORDERING GUIDE
Model
Temperature Range
–40°C to +85°C
Package Description
Chip Scale Package
Package Option
CP-20
ADG784BCP
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG784 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. 0
Typical Performance Characteristics–ADG784
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
T
= 25ꢁC
A
V
= 2.7V
DD
V
= 5V
DD
–2
–4
–6
V
= 3.0V
DD
V
= 4.5V
DD
V
= 5.0V
DD
1.3
2.5
3.7
4.9
10k
100k
1M
10M
100M
V
ORV DRAIN OR SOURCEVOLTAGE –V
FREQUENCY – Hz
S
D
TPC 4. On Response vs. Frequency
TPC 1. On Resistance as a Function of VD (VS) for
Various Single Supplies
3.0
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
V
= 5V
DD
V
= 5V
DD
R
= 100ꢀ
L
2.5
2.0
1.5
+85ꢁC
+25ꢁC
–40ꢁC
1.0
0.5
0
1.3
2.5
3.7
4.9
100k
1M
10M
100M
1G
V
ORV DRAIN OR SOURCEVOLTAGE –V
O
S
FREQUENCY – Hz
TPC 5. Off Isolation vs. Frequency
TPC 2. On Resistance as a Function of VD (VS) for
Different Temperatures with 5 V Single Supplies
4.5
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
V
= 3V
DD
V
= 5V
DD
4.0
R
V
= 100ꢀ
+85ꢁC
L
= 0.316V
P-P
3.5
3.0
+25ꢁC
2.5
2.0
1.5
–40ꢁC
1.0
0.5
0
0.6
V
1.1
1.6
2.1
2.6
100k
1M
10M
100M
1G
ORV DRAIN OR SOURCEVOLTAGE –V
S
D
FREQUENCY – Hz
TPC 3. On Resistance as a Function of VD (VS) for
Different Temperatures with 3 V Single Supplies
TPC 6. Crosstalk vs. Frequency
REV. 0
–5–
ADG784
20
V
= 5V
DD
T
= 25 C
A
15
10
5
0
–5
–10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
SOURCEVOLTAGE –V
TPC 7. Charge Injection vs. Source Voltage
10 BASETX+
TX1
ADG784
10 BASETX–
100 BASETX+
TX2
100 BASETX–
RJ45
10 BASETX+
RX1
10 BASETX–
TRANSFORMER
100 BASETX+
RX2
100 BASETX–
10 BASETX
100 BASETX
Figure 1. Full Duplex Transceiver
TX1
120ꢀ
100ꢀ
RX1
Figure 2. Loop Back
Figure 3. Line Termination
Figure 4. Line Clamp
–6–
REV. 0
ADG784
Test Circuits
I
DS
V1
I
(OFF)
A
I
(OFF)
A
I
(ON)
A
S
D
D
S
D
S
D
S
D
V
V
D
V
V
D
S
S
V
R
= V1/I
DS
S
ON
Test Circuit 1. On Resistance
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
5V
0.1ꢃF
3V
V
IN
V
DD
50%
50%
90%
V
OUT
S
D
90%
V
S
R
100ꢀ
C
L
35pF
L
V
OUT
IN
tOFF
tON
EN
GND
Test Circuit 4. Switching Times
5V
0.1ꢃF
V
DD
3V
V
IN
S1A
S1B
50%
50%
50%
V
OUT
D1
0V
V
S
R
100ꢀ
C
L
35pF
V
50%
L
OUT
V
S
V
S
DECODER
GND
tD
tD
EN
Test Circuit 5. Break-Before-Make Time Delay
V
V
DD
DD
0.1ꢃF
0.1ꢃF
ADG784
ADG784
NETWORK
ANALYZER
NETWORK
ANALYZER
S1A
S1A
50ꢀ
50ꢀ
50ꢀ
V
V
S
S
IN
IN
V
V
V
IN
V
OUT
IN
OUT
D1
D1
50ꢀ
50ꢀ
EN
GND
EN
GND
Test Circuit 6. Bandwidth
Test Circuit 7. Off Isolation
REV. 0
–7–
ADG784
V
DD
0.1ꢃF
NETWORK
ANALYZER
ADG784
50ꢀ
S2A
S1A
V
S
V
OUT
50ꢀ
IN
D1
D2
V
IN
50ꢀ
EN
GND
Test Circuit 8. Channel-to-Channel Crosstalk
5V
V
DD
ADG784
R
S
S1A
D1 V
OUT
3V
C
L
S1B
S2A
V
S
1nF
V
IN
D2 V
OUT
C
L
1nF
S2B
S3A
V
OUT
ꢄV
OUT
D3 V
OUT
Q
= C ꢅ ꢄV
L OUT
C
L
1nF
S3B
S4A
INJ
D4 V
OUT
C
L
S4B
1nF
1-OF-2
DECODER
IN
EN
Test Circuit 9. Charge Injection
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
20-Lead CSP
(CP-20)
0.024 (0.60)
0.017 (0.42)
0.009 (0.24)
0.024 (0.60)
0.010 (0.25)
0.157 (4.0)
BSC SQ
MIN
0.017 (0.42)
0.009 (0.24)
16
15
20
1
PIN 1
0.012 (0.30)
0.009 (0.23)
0.007 (0.18)
0.030 (0.75)
0.022 (0.60)
0.014 (0.50)
0.080 (2.25)
0.083 (2.10) SQ
0.077 (1.95)
INDICATOR
0.148 (3.75)
BSC SQ
TOP
VIEW
BOTTOM
VIEW
11
10
5
6
0.031 (0.80) MAX
0.026 (0.65) NOM
0.080 (2.00)
REF
12ꢁ MAX
0.035 (0.90) MAX
0.033 (0.85) NOM
0.002 (0.05)
0.0004 (0.01)
0.0 (0.0)
SEATING
PLANE
0.020 (0.50)
BSC
0.008 (0.20)
REF
CONTROLLING DIMENSIONS ARE IN MILLIMETERS
–8–
REV. 0
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