ADL8107-EVALZ [ADI]
GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz;
| 型号： | ADL8107-EVALZ |
| 厂家： | 
ADI |
| 描述： | GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz |
| 文件： | 总24页 (文件大小：2963K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
ADL8107
GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz
FEATURES
FUNCTIONAL BLOCK DIAGRAM
► Single positive supply (self biased)
► Gain: 24 dB typical at 7 GHz to 16 GHz
► OIP3: 29 dBm typical at 7 GHz to 16 GHz
► Noise figure: 1.3 dB typical at 7 GHz to 16 GHz
► 8-lead, 2 mm × 2 mm, LFCSP (see the Outline Dimensions
section)
Figure 1.
APPLICATIONS
► Test instrumentation
► Military communications
► Radar
GENERAL DESCRIPTION
The ADL8107 is a gallium arsenide (GaAs), monolithic micro-
wave IC (MMIC), pseudomorphic high electron mobility transistor
(pHEMT), low noise, wideband, high linearity amplifier that operates
from 6 GHz to 18 GHz.
The ADL8107 provides a typical gain of 24 dB at 7 GHz to
16 GHz, a 1.3 dB typical noise figure at 7 GHz to 16 GHz, a
18.5 dBm typical output power for 1 dB compression (OP1dB) at
7 GHz to 16 GHz, and a typical output third-order intercept (OIP3)
of 29 dBm at 7 GHz to 16 GHz, requiring only 90 mA from a 5 V
drain supply voltage. This low noise amplifier has a high output sec-
ond-order intercept (OIP2) of 30.5 dBm typical at 7 GHz to 16 GHz,
making the ADL8107 suitable for military and test instrumentation
applications.
The ADL8107 also features inputs and outputs that are internally
matched to 50 Ω. The RFIN and RFOUT pins are internally ac-cou-
pled, and the bias inductor is also integrated, making the ADL8107
ideal for surface-mounted technology (SMT)-based, high density
applications.
The ADL8107 is housed in a RoHS-compliant, 2 mm × 2 mm,
8-lead LFCSP.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
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Data Sheet
ADL8107
TABLE OF CONTENTS
Features................................................................ 1
Applications........................................................... 1
General Description...............................................1
Functional Block Diagram......................................1
Specifications........................................................ 3
6 GHz to 7 GHz Frequency Range.................... 3
7 GHz to 16 GHz Frequency Range.................. 3
16 GHz to 18 GHz Frequency Range................ 4
DC Specifications...............................................4
Absolute Maximum Ratings...................................5
Thermal Resistance........................................... 5
Electrostatic Discharge (ESD) Ratings...............5
ESD Caution.......................................................5
Pin Configuration and Function Descriptions........ 6
Interface Schematics..........................................6
Typical Performance Characteristics.....................7
Theory of Operation.............................................20
Applications Information...................................... 21
Recommended Bias Sequencing.....................21
Recommended Power Management Circuit........22
Using the RBIAS Pin to Enable and Disable
ADL8107............................................................23
Outline Dimensions............................................. 24
Ordering Guide.................................................24
Evaluation Boards............................................ 24
REVISION HISTORY
1/2022—Revision 0: Initial Version
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Data Sheet
ADL8107
SPECIFICATIONS
6 GHZ TO 7 GHZ FREQUENCY RANGE
VDD = 5 V, total supply current (IDQ) = 90 mA, RBIAS = 4.12 kΩ, and TCASE = 25°C, unless otherwise noted.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
FREQUENCY RANGE
6
7
GHz
dB
GAIN
19.5
22.5
0.03
1.9
Gain Variation over Temperature
dB/°C
dB
NOISE FIGURE
RETURN LOSS
Input
12
13
dB
dB
Output
OUTPUT
OP1dB
15
18
19.5
28
dBm
dBm
dBm
dBm
%
Saturated Output Power (PSAT
)
OIP3
OIP2
Measurement taken at output power (POUT) per tone = 6 dBm
Measurement taken at POUT per tone = 6 dBm
Measured at PSAT
27
POWER ADDED EFFICIENCY (PAE)
16
7 GHZ TO 16 GHZ FREQUENCY RANGE
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ, and TCASE = 25°C, unless otherwise noted.
Table 2.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
FREQUENCY RANGE
7
16
GHz
dB
GAIN
21.5
24
0.048
1.3
Gain Variation over Temperature
dB/°C
dB
NOISE FIGURE
RETURN LOSS
Input
12
dB
dB
Output
13.5
OUTPUT
OP1dB
16.5
18.5
20
dBm
dBm
dBm
dBm
%
Saturated Output Power (PSAT
)
OIP3
OIP2
29
Measurement taken at POUT per tone = 6 dBm
Measurement taken at POUT per tone = 6 dBm
Measured at PSAT
30.5
18
POWER ADDED EFFICIENCY (PAE)
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Data Sheet
ADL8107
SPECIFICATIONS
16 GHZ TO 18 GHZ FREQUENCY RANGE
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ, and TCASE = 25°C, unless otherwise noted.
Table 3.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
FREQUENCY RANGE
16
18
18
GHz
dB
GAIN
20.5
0.046
1.7
Gain Variation over Temperature
dB/°C
dB
NOISE FIGURE
RETURN LOSS
Input
8
7
dB
dB
Output
OUTPUT
OP1dB
14
17
dBm
dBm
dBm
dBm
%
Saturated Output Power (PSAT
)
19
OIP3
OIP2
28.5
33
Measurement taken at POUT per tone = 6 dBm
Measurement taken at POUT per tone = 6 dBm
Measured at PSAT
POWER ADDED EFFICIENCY (PAE)
12
DC SPECIFICATIONS
Table 4.
Parameter
Min
Typ
Max
Unit
SUPPLY CURRENT
IDQ
90
89
1
mA
mA
mA
Amplifier Current (IDQ_AMP
)
RBIAS Current (IRBIAS
SUPPLY VOLTAGE
VDD
)
3
5
5.5
V
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Data Sheet
ADL8107
ABSOLUTE MAXIMUM RATINGS
Table 5.
THERMAL RESISTANCE
Parameter
Rating
Overall thermal performance is directly linked to printed circuit
board (PCB) design and operating environment. Careful attention to
PCB thermal design is required.
VDD
6 V
Continuous RF Input Power (RFIN)
22 dBm
24 dBm
1.3 W
Pulsed RFIN (Duty Cycle = 10%, Pulse Width = 100 μs)
θJC is the junction to case thermal resistance.
Continuous Power Dissipation (PDISS), TCASE = 85°C
(Derate 14.5 mW/°C Above 85°C)
Table 6. Thermal Resistance
Temperature
Package Type
θJC
Unit
Storage Range
Operating Range
−65°C to +150°C
−40°C to +85°C
116°C
CP-8-30
69
°C/W
ELECTROSTATIC DISCHARGE (ESD) RATINGS
Nominal Junction (TCASE = 85°C, VDD = 5 V,
IDQ = 90 mA, Input Power (PIN) = Off)
The following ESD information is provided for handling of ESD-sen-
sitive devices in an ESD protected area only.
Maximum Junction
175°C
Stresses at or above those listed under Absolute Maximum Ratings
may cause permanent damage to the product. This is a stress
rating only; functional operation of the product at these or any other
conditions above those indicated in the operational section of this
specification is not implied. Operation beyond the maximum operat-
ing conditions for extended periods may affect product reliability.
Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.
ESD Ratings for ADL8107
Table 7. ADL8107, 8-Lead LFCSP
ESD Model
Withstand Threshold (V)
Class
HBM
±250
1A
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Charged devi-
ces and circuit boards can discharge without detection. Although
this product features patented or proprietary protection circuitry,
damage may occur on devices subjected to high energy ESD.
Therefore, proper ESD precautions should be taken to avoid
performance degradation or loss of functionality.
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Data Sheet
ADL8107
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pin Configuration
Table 8. Pin Function Descriptions
Pin No.
Mnemonic
Description
1
RBIAS
Bias Setting Resistor. Connect a resistor between RBIAS and VDD to set the IDQ. See Figure 81 and Table 9 for more details. See
Figure 3 for the interface schematic.
2, 4, 5, 7
GND
Ground. Connect the GND pins to a ground plane that has low electrical and thermal impedance. See Figure 6 for the interface
schematic.
3
6
8
RFIN
RF Input. The RFIN pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic.
RF Output. The RFOUT pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
Drain Bias. Connect the VDD pin to the supply voltage. See Figure 5 for the interface schematic.
Exposed Paddle. Connect the exposed paddle to a ground plane that has low electrical and thermal impedance.
RFOUT
VDD
GROUND
PADDLE
INTERFACE SCHEMATICS
Figure 5. VDD and RFOUT Interface Schematic
Figure 6. GND Interface Schematic
Figure 3. RBIAS Interface Schematic
Figure 4. RFIN Interface Schematic
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 7. Broadband Gain and Return Loss vs. Frequency, VDD = 5 V, IDQ
90 mA, RBIAS = 4.12 kΩ (S22 Is the Output Return Loss, S21 Is the Gain, and
S11 Is the Input Return Loss)
=
Figure 10. Gain vs. Frequency for Various Supply Voltages and RBIAS
Values, IDQ = 90 mA
Figure 11. Gain vs. Frequency for Various Temperatures, 4 GHz to 20 GHz,
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 8. Gain vs. Frequency for Various Temperatures, 4 GHz to 20 GHz,
VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 12. Gain vs. Frequency for RBIAS Values and Various IDQ, VDD = 5 V
Figure 9. Gain vs. Frequency for Various Supply Voltages and IDQ, RBIAS =
4.12 kΩ
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 13. Input Return Loss vs. Frequency for Various Temperatures, 4 GHz
to 20 GHz, VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 16. Input Return Loss vs. Frequency for Various Temperatures, 4 GHz
to 20 GHz, VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 14. Input Return Loss vs. Frequency for Various Supply Voltages and
IDQ, RBIAS = 4.12 kΩ
Figure 17. Input Return Loss vs. Frequency for RBIAS Values and Various
IDQ, VDD = 5 V
Figure 15. Input Return Loss vs. Frequency for Various Supply Voltages and
RBIAS Values, IDQ = 90 mA
Figure 18. Output Return Loss vs. Frequency for Various Supply Voltages
and RBIAS Values, IDQ = 90 mA
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 19. Output Return Loss vs. Frequency for Various Temperatures,
4 GHz to 20 GHz, VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 22. Output Return Loss vs. Frequency for Various Temperatures,
4 GHz to 20 GHz, VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 20. Output Return Loss vs. Frequency for Various Supply Voltages
and IDQ, RBIAS = 4.12 kΩ
Figure 23. Output Return Loss vs. Frequency for RBIAS Values and Various
IDQ, VDD = 5 V
Figure 21. Reverse Isolation vs. Frequency for Various Temperatures, 4 GHz
to 20 GHz, VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 24. Reverse Isolation vs. Frequency for Various Temperatures, 4 GHz
to 20 GHz, VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 25. Reverse Isolation vs. Frequency for Various Supply Voltages and
RBIAS Values, IDQ = 90 mA
Figure 28. Reverse Isolation vs. Frequency for RBIAS Values and Various IDQ
VDD = 5 V
,
Figure 26. Reverse Isolation vs. Frequency for Various Supply Voltages and
IDQ, RBIAS = 4.12 kΩ
Figure 29. Noise Figure vs. Frequency for Various Supply Voltages and
RBIAS Values, IDQ = 90 mA
Figure 27. Noise Figure vs. Frequency for Various Temperatures,
4 GHz to 20 GHz, VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 30. Noise Figure vs. Frequency for Various Temperatures,
4 GHz to 20 GHz, VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 31. Noise Figure vs. Frequency for Various Supply Voltages and IDQ
RBIAS = 4.12 kΩ
,
Figure 34. Noise Figure vs. Frequency for RBIAS Values and Various IDQ
VDD = 5 V
,
Figure 32. OP1dB vs. Frequency for Various Temperatures, 4 GHz to 20 GHz,
VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 35. OP1dB vs. Frequency for Various Temperatures, 4 GHz to 20 GHz,
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 33. OP1dB vs. Frequency for Various Supply Voltages and
RBIAS Values, IDQ = 90 mA
Figure 36. OP1dB vs. Frequency for Various Supply Voltages and IDQ
RBIAS = 4.12 kΩ
,
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 37. OP1dB vs. Frequency for RBIAS Values and Various IDQ
VDD = 5 V
,
Figure 40. PSAT vs. Frequency for Various Supply Voltages and
RBIAS Values, IDQ = 90 mA
Figure 38. PSAT vs. Frequency for Various Temperatures, 4 GHz to 20 GHz,
VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 41. PSAT vs. Frequency for Various Temperatures, 4 GHz to 20 GHz,
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 39. PSAT vs. Frequency for Various Supply Voltages and IDQ
RBIAS = 4.12 kΩ
,
Figure 42. PSAT vs. Frequency for RBIAS Values and Various IDQ, VDD = 5 V
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 43. PDISS vs. PIN at TA = 85°C, VDD = 5 V, IDD = 90 mA
Figure 46. PAE Measured at PSAT vs. Frequency for Various Temperatures,
6 GHz to 18 GHz, VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 44. PAE Measured at PSAT vs. Frequency for Various Supply Voltages
and IDQ, RBIAS = 4.12 kΩ
Figure 47. PAE Measured at PSAT vs. Frequency for RBIAS Values and
Various IDQ, VDD = 5 V
Figure 45. POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 8 GHz,
VDD = 3 V, RBIAS = 909 Ω
Figure 48. POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 8 GHz,
VDD = 5 V, RBIAS = 4.12 kΩ
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 49. POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 12 GHz,
VDD = 3 V, RBIAS = 909 Ω
Figure 52. POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 12 GHz,
VDD = 5 V, RBIAS = 4.12 kΩ
Figure 50. POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 16 GHz,
VDD = 3 V, RBIAS = 909 Ω
Figure 53. POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 16 GHz,
VDD = 5 V, RBIAS = 4.12 kΩ
Figure 51. IDD vs. PIN for Various Frequencies, VDD = 3 V, RBIAS = 909 Ω
Figure 54. IDD vs. PIN for Various Frequencies, VDD = 5 V, RBIAS = 4.12 kΩ
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 55. OIP3 vs. Frequency for Various Temperature, 4 GHz to 20 GHz,
VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 58. OIP3 vs. Frequency for Various Temperature, 4 GHz to 20 GHz,
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 56. OIP3 vs. Frequency for Various Supply Voltages and IDQ
RBIAS = 4.12 kΩ
,
Figure 59. OIP3 vs. Frequency for RBIAS Values and Various IDQ, VDD = 5 V
Figure 60. OIP3 vs. Frequency for Various POUT per Tone, 4 GHz to 20 GHz,
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 57. OIP3 vs. Frequency for Various Supply Voltages and
RBIAS Values, IDQ = 90 mA
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 61. OIP2 vs. Frequency for Various Temperature, 4 GHz to 20 GHz,
VDD = 3 V, IDQ = 90 mA, RBIAS = 909 Ω
Figure 64. OIP2 vs. Frequency for Various Temperature, 4 GHz to 20 GHz,
VDD = 5 V, IDQ = 90 mA, RBIAS = 4.12 kΩ
Figure 62. OIP2 vs. Frequency for Various Supply Voltages and IDQ
RBIAS = 4.12 kΩ
,
Figure 65. OIP2 vs. Frequency for Various Supply Voltages and
RBIAS Values, IDQ = 90 mA
Figure 63. OIP2 vs. Frequency for RBIAS Values and Various IDQ, VDD = 3 V
Figure 66. OIP2 vs. Frequency for RBIAS Values and Various IDQ, VDD = 5 V
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 67. Output Third-Order Intermodulation (OIM3) vs. POUT per Tone for
Various Frequencies, VDD = 3 V
Figure 70. OIM3 vs. POUT per Tone for Various Frequencies, VDD = 4 V
Figure 71. Phase Noise vs. Frequency at 8 GHz for Various PIN
Figure 68. OIM3 vs. POUT per Tone for Various Frequencies, VDD = 5 V
Figure 72. Phase Noise vs. Frequency at 12 GHz for Various PIN
Figure 69. Phase Noise vs. Frequency at 10 GHz for Various PIN
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 73. IDQ vs. RBIAS Value, 1 Ω to 10 kΩ, VDD = 3 V
Figure 76. IDQ vs. RBIAS Value, 10 kΩ to 130 kΩ, VDD = 3 V
Figure 74. IDQ vs. RBIAS Value, 1 Ω to 10 kΩ, VDD = 5 V
Figure 77. IDQ vs. RBIAS Value, 10 kΩ to 220 kΩ, VDD = 5 V
Figure 75. IDQ vs. Supply Voltage, RBIAS = 909 Ω
Figure 78. IDQ vs. Supply Voltage, RBIAS = 4.12 kΩ
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Data Sheet
ADL8107
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 79. Overdrive Recovery Time vs. PIN at 7 GHz, Recovery to Within 90%
of Small Signal Gain Value, VDD = 5 V, RBIAS = 4.12 kΩ
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Data Sheet
ADL8107
THEORY OF OPERATION
The ADL8107 is a GaAs, MMIC, pHEMT, low noise wideband
amplifier with integrated ac coupling capacitors and a bias inductor.
Figure 80 shows a simplified schematic.
The ADL8107 has ac-coupled, single-ended input and output ports
with impedances that are nominally equal to 50 Ω over the 6 GHz
to 18 GHz frequency range. No external matching components are
required. To adjust IDQ, connect an external resistor between the
RBIAS and VDD pins.
Figure 80. Simplified Schematic
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Data Sheet
ADL8107
APPLICATIONS INFORMATION
The basic connections for operating the ADL8107 over the speci-
fied frequency range are shown in Figure 81. No external biasing
inductor is required, allowing the 5 V supply to be connected
to the VDD pin. It is recommended to use 0.1 µF and 100 pF
power supply decoupling capacitors. The power supply decoupling
capacitors shown in Figure 81 represent the configuration used to
characterize and qualify the ADL8107.
RECOMMENDED BIAS SEQUENCING
See the ADL8107-EVALZ user guide for the recommended bias
sequencing information.
Table 9. Recommended Bias Resistor Values for VDD = 5 V
RBIAS (kΩ)
IDQ (mA)
IDQ_AMP (mA)
IRBIAS (mA)
1.74
2.13
2.67
3.32
4.12
5.11
6.57
8.45
11.3
15
110
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
108.06
103.34
98.61
93.84
89.0
1.94
1.66
1.39
1.16
1.0
To set IDQ, connect a resistor (R2) between the RBIAS and VDD
pins. A default value of 4.12 kΩ is recommended, which results in
a nominal IDQ of 90 mA. Table 9 shows how the IDQ and IDQ_AMP
varies vs. the RBIAS. The RBIAS pin also draws a current that
varies with the value of RBIAS (see Table 9). Do not leave the
RBIAS pin open.
84.2
0.8
79.36
74.5
0.64
0.5
Correct sequencing of the dc and RF power is required to safely
operate the ADL8107. During power up, apply VDD before the RF
power is applied to RFIN, and during power off, remove the RF
power from RFIN before VDD is powered off.
69.6
0.4
64.7
0.3
20.8
29.8
53
59.78
54.85
49.91
44.93
39.95
34.97
29.98
0.22
0.15
0.09
0.07
0.05
0.03
0.02
64.9
102
169
301
Figure 81. Typical Application Circuit
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Data Sheet
ADL8107
RECOMMENDED POWER MANAGEMENT CIRCUIT
Figure 82 shows a recommended power management circuit for the
ADL8107. The LT8607 step-down regulator is used to step down a
12 V rail to 6.5 V, which is then applied to the LT3042 low dropout
(LDO) linear regulator to generate a low noise 5 V output. While the
circuit shown in Figure 82 has an input voltage of 12 V, the input
range to the LT8607 can be as high as 42 V.
1% variation over temperature. The PGFB tolerance is roughly 3%
over temperature, and adding resistors results in a bit more (5%),
therefore, putting 5% between the output and PGFB works well. In
addition, the PG open-collector is pulled up to the 5 V output to
give a convenient 0 V to 5 V voltage range. Table 10 provides the
recommended resistor values for operation at 5 V, 3.3 V, and 3 V.
Table 10. Recommended Resistor Values for Operating at 5 V, 3.3 V, and 3 V
The 6.54 V regulator output of the LT8607 is set by the R2 and R3
resistors according to the following equation:
LDO Output Voltage (V)
R4 (kΩ)
R7 (kΩ)
R8 (kΩ)
5
49.9
33.2
30.1
442
287
255
30.1
30.1
30.1
R2 = R3((VOUT/0.778 V) – 1)
3.3
3
The switching frequency is set to 2 MHz by the 18.2 kΩ resistor
on the RT pin. The LT8607 data sheet provides a table of resistor
values that can be used to select other switching frequencies
ranging from 0.2 MHz to 2.2 MHz.
The LT8607 can source a maximum current of 750 mA, and the
LT3042 can source a maximum current of 200 mA. If the 5 V power
supply voltage is being developed as a bus supply to serve another
component, higher current devices can be used. The LT8608 and
LT8609 step-down regulators can source a maximum current to
1.5 A and 3 A, respectively, and these devices are pin compatible
with the LT8607. The LT3045 linear regulator, which is pin compati-
ble with LT3042, can source a maximum current to 500 mA.
The output voltage of the LT3042 is set by the R4 resistor connect-
ed to the SET pin according to the following equation:
VOUT = 100 μA × R4
The PGFB resistors are chosen to trigger the power-good (PG)
signal when the output is just under 95% of the target voltage of
5 V. The output of the LT3042 has 1% initial tolerance and another
Figure 82. Recommended Power Management Circuit
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Data Sheet
ADL8107
USING THE RBIAS PIN TO ENABLE AND DISABLE ADL8107
By attaching a single-pole, double throw (SPDT) switch to the
RSET pin, an enable and/or disable circuit can be implemented as
shown in Figure 83. The ADG719 CMOS switch is used to connect
the RBIAS resistor either to supply or ground. When the RBIAS
resistor is connected to ground, the overall current consumption
reduces to 4.73 mA with no RF signal present and 4.92 mA when
the RF input level is –10 dBm.
Figure 84 shows a plot of the turn on and/or turn off response
time of the RF output envelope when the IN pin of the ADG719 is
pulsed.
Figure 84. On and/or Off Response of the RF Output Envelope When the IN
Pin of the ADG719 Is Pulsed
Figure 83. Fast Enable and/or Disable Circuit Using an SPDT
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Data Sheet
ADL8107
OUTLINE DIMENSIONS
Figure 85. 8-Lead Lead Frame Chip Scale Package [LFCSP]
2 mm × 2 mm Body and 0.85 mm Package Height
(CP-8-30)
Dimensions shown in millimeters
Updated: January 19, 2022
ORDERING GUIDE
Package
Option
Model1
Temperature Range
Package Description
Packing Quantity
ADL8107ACPZN
-40°C to +85°C
-40°C to +85°C
LFCSP:LEADFRM CHIP SCALE
LFCSP:LEADFRM CHIP SCALE
Reel, 1
CP-8-30
CP-8-30
ADL8107ACPZN-R7
Reel, 3000
1
Z = RoHS Compliant Part.
EVALUATION BOARDS
Table 11.
Models1
Description
ADL8107-EVALZ
Evaluation Board
1
Z = RoHS-Compliant Part.
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