ADN2531 [ADI]
11.3 Gbps, Active Back-Termination, Differential Laser Diode Driver; 11.3 Gbps的，主动背向端接，差分激光二极管驱动器
| 型号： | ADN2531 |
| 厂家： | 
ADI |
| 描述： | 11.3 Gbps, Active Back-Termination, Differential Laser Diode Driver |
| 文件： | 总20页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
11.3 Gbps, Active Back-Termination,
Differential Laser Diode Driver
ADN2531
FEATURES
GENERAL DESCRIPTION
3.3 V operation
Up to 11.3 Gbps operation
Typical 26 ps rise/fall times
Bias current range: 10 mA to 100 mA
Differential modulation current range: 10 mA to 80 mA
Voltage input control for bias and modulation currents
Data inputs sensitivity: 150 mV p-p differential
Automatic laser shutdown (ALS)
Crosspoint adjustment (CPA)
The ADN2531 laser diode driver can work with directly
modulated laser diodes, including vertical-cavity surface-emitting
laser (VCSEL), Fabry-Perot (FP) lasers, and distributed feedback
(DFB) lasers, with a differential loading resistance ranging from
5 Ω to 140 Ω. The active back-termination in the ADN2531
absorbs signal reflections from the laser diode side of the output
transmission lines, enabling excellent optical eye quality even when
the TOSA end of the output transmission lines is significantly
mismatched. The ADN2531 is a SFP+ MSA-compliant device,
and its small package and enhanced ESD protection provides
the optimum solution for compact modules in which laser
diodes are packaged in low pin-count optical subassemblies.
VCSEL, FP, DFB laser support
SFF/SFP/XFP/SFP+ MSA compliant
Optical evaluation board available
Compact, 3 mm × 3 mm LFCSP
The modulation and bias currents are programmable via the
MSET and BSET control pins. By driving these pins with control
voltages, the user has the flexibility to implement various average
optical power and extinction ratio control schemes, including a
closed-loop or a look-up table control. The automatic laser shut-
down (ALS) feature allows turning the bias on and off while
simultaneously modulating currents by driving the ALS pin with
a low voltage transistor-to-transistor logic (LVTTL) source.
APPLICATIONS
Optical transmitters, up to 11.3 Gbps, for SONET/SDH,
Ethernet, and Fibre Channel applications
SFF/SFP/SFP+/XFP/X2/XENPAK/XPAK MSA compliant
300-pin optical modules, up to 11.3 Gbps
The product is available in a space-saving, 3 mm × 3 mm LFCSP
package and operates from −40°C to +100°C.
FUNCTIONAL BLOCK DIAGRAM
VCC
CPA
ALS
VCC
ADN2531
VCC
IMODP
IMODN
50Ω 50Ω
I
100Ω
MOD
VCC
GND
DATAP
DATAN
CROSSPOINT
ADJUST
IBMON
IBIAS
400Ω
800Ω
200Ω
200Ω
200Ω
10Ω
MSET
GND
BSET
Figure 1.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
www.analog.com
©2009 Analog Devices, Inc. All rights reserved.
ADN2531
TABLE OF CONTENTS
Features .............................................................................................. 1
Input Stage................................................................................... 11
Bias Current ................................................................................ 11
Automatic Laser Shutdown (ALS) ........................................... 12
Modulation Current................................................................... 12
Load Mistermination................................................................. 14
Crosspoint Adjust....................................................................... 14
Power Consumption .................................................................. 14
Applications Information.............................................................. 15
Typical Application Circuit....................................................... 15
Layout Guidelines....................................................................... 16
Design Example.......................................................................... 16
Outline Dimensions....................................................................... 18
Ordering Guide .......................................................................... 18
Applications....................................................................................... 1
General Description......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Package Thermal Specifications ................................................. 4
Absolute Maximum Ratings............................................................ 5
ESD Caution.................................................................................. 5
Pin Configuration and Function Descriptions............................. 6
Typical Performance Characteristics ............................................. 7
Test Circuit ...................................................................................... 10
Theory of Operation ...................................................................... 11
REVISION HISTORY
9/09—Revision 0: Initial Version
Rev. 0 | Page 2 of 20
ADN2531
SPECIFICATIONS
VCC = VCCMIN to VCCMAX, TA = −40°C to +100°C, 12 Ω differential load impedance, crosspoint adjust disabled, unless otherwise noted.
Typical values are specified at 25°C and IBIAS = IMOD = 40 mA with crosspoint adjust disabled, unless otherwise noted.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
BIAS CURRENT (IBIAS
)
Bias Current Range
Bias Current While ALS Asserted
Compliance Voltage1
10
100
300
VCC
mA
μA
V
ALS = high
IBIAS = 80 mA
IBIAS = 10 mA
0.6
0.55
VCC
V
MODULATION CURRENT (IMODP, IMODN)
Modulation Current IMOD Range
10
35
80
mA diff
mA diff
μA diff
%
ps
ps
ps rms
ps p-p
ps p-p
ps p-p
ps p-p
dB
RLOAD = 5 Ω to 50 Ω differential
RLOAD = 100 Ω differential
ALS = high
70
IMOD While ALS Asserted
Crosspoint Adjust (CPA) Range2
Rise Time (20% to 80%)2, 3, 4
Fall Time (20% to 80%)2, 3, 4
Random Jitter2, 3, 4
500
65
32.5
32.5
26
26
<0.5
5.4
5.8
5.4
5.8
−5
−10.5
Deterministic Jitter2, 4, 5
8.2
8.2
8.2
8.2
10.7 Gbps, CPA disabled
10.7 Gbps, CPA 35% to 65%
11.3 Gbps, CPA disabled
11.3 Gbps, CPA 35% to 65%
5 GHz < f < 10 GHz, Z0 = 100 Ω differential7
f < 5 GHz, Z0 = 100 Ω differential7
Deterministic Jitter 2, 4, 6
Differential |S22|
dB
Compliance Voltage1
DATA INPUTS (DATAP, DATAN)
Input Data Rate
Differential Input Swing
Differential |S11|
Input Termination Resistance
BIAS CONTROL INPUT (BSET)
BSET Voltage to IBIAS Gain
BSET Input Resistance
VCC − 1.1
VCC + 1.1
V
11.3
1.6
Gbps
NRZ
0.15
85
V p-p diff Differential ac-coupled
dB
Ω
−15
100
f < 10 GHz, Z0 = 100 Ω differential
Differential
115
100
1000
mA/V
Ω
800
1200
MODULATION CONTROL INPUT (MSET)
MSET Voltage to IMOD Gain
MSET Input Resistance
BIAS MONITOR (IBMON)
IBMON to IBIAS Ratio
120
600
mA/V
Ω
10
μA/mA
Accuracy of IBIAS to IBMON Ratio
−5.0
−4.0
−2.5
−2
+5.0
+4.0
+2.5
+2
%
%
%
%
10 mA ≤ IBIAS < 20 mA, RIBMON = 750 Ω
20 mA ≤ IBIAS < 40 mA, RIBMON = 750 Ω
40 mA ≤ IBIAS < 70 mA, RIBMON = 750 Ω
70 mA ≤ IBIAS < 80 mA, RIBMON = 750 Ω
AUTOMATIC LASER SHUTDOWN (ALS)
VIH
2.0
V
VIL
IIL
IIH
0.8
+20
200
2
V
−20
0
μA
μA
μs
ALS Assert Time
Rising edge of ALS to falling edge of IBIAS and
IMOD below 10% of nominal; see Figure 2
ALS Negate Time
10
μs
Falling edge of ALS to rising edge of IBIAS and
I
MOD above 90% of nominal; see Figure 2
Rev. 0 | Page 3 of 20
ADN2531
Parameter
POWER SUPPLY
VCC
Min
Typ
Max
3.6
Unit
Test Conditions/Comments
3.0
3.3
36
55
V
mA
mA
8
ICC
VBSET = VMSET = 0 V
VBSET = VMSET = 0 V
9
ISUPPLY
62
1 The voltage between the pin with the specified compliance voltage and GND.
2 Specified for TA = −40°C to +85°C due to test equipment limitation. See the Typical Performance Characteristics section for data on performance for TA = −40°C to +100°C.
3 The pattern used is composed of a repetitive sequence of eight 1s followed by eight 0s at 10.7 Gbps.
4 Measured using the high speed characterization circuit shown in Figure 22.
5 The pattern used is K28.5 (00111110101100000101) at 10.7 Gbps rate.
6 The pattern used is K28.5 (00111110101100000101) at 11.3 Gbps rate.
7 Measured at balanced IMODP and IMODN.
8 Only includes current in the ADN2531 VCC pins.
9 Includes current in ADN2531 VCC pins and dc current in IMODP and IMODN pull-up inductors. See the Power Consumption section for total supply current calculation.
PACKAGE THERMAL SPECIFICATIONS
Table 2.
Parameter
Min
65
2.6
Typ
72.2
5.8
Max
79.4
10.7
125
Unit
°C/W
°C/W
°C
Test Conditions/Comments
θJ-TOP
θJ-PAD
Thermal resistance from junction to top of package.
Thermal resistance from junction to bottom of exposed pad.
IC Junction Temperature
ALS
NEGATE TIME
ALS
t
I
BIAS
MOD
AND I
90%
10%
t
ALS
ASSERT TIME
Figure 2. ALS Timing Diagram
Rev. 0 | Page 4 of 20
ADN2531
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rating
Supply Voltage: VCC to GND
IMODP, IMODN to GND
DATAP, DATAN to GND
All Other Pins
ESD on IMODP/IMODN1
ESD on All Other Pins1
Junction Temperature
Storage Temperature Range
−0.3 V to +4.2 V
VCC − 1.5 V to 4.5 V
VCC − 1.8 V to VCC − 0.4 V
−0.3 V to VCC + 0.3 V
200 V HBM
1.5 kV HBM
150°C
−65°C to +125°C
ESD CAUTION
1 HBM = human body model.
Rev. 0 | Page 5 of 20
ADN2531
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
12 BSET
11 IBMON
10 IBIAS
MSET 1
CPA 2
ALS 3
GND 4
PIN 1
INDICATOR
ADN2531
TOP VIEW
(Not to Scale)
9
GND
NOTES
1. THERE IS AN EXPOSED PAD ON THE
BOTTOM OF THE PACKAGE THAT MUST BE
CONNECTED TO THE VCC OR GND PLANE.
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No.
Mnemonic
MSET
CPA
ALS
GND
I/O
Description
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Input
Input
Input
Modulation Current Control Input
Crosspoint Adjust Control Input
Automatic Laser Shutdown
Negative Power Supply
Power
Power
Output
Output
Power
Power
Output
Output
Input
Power
Input
Input
Power
Power
VCC
Positive Power Supply
IMODN
IMODP
VCC
Modulation Current Negative Output
Modulation Current Positive Output
Positive Power Supply
Negative Power Supply
Bias Current Output
Bias Current Monitoring Output
Bias Current Control Input
Positive Power Supply
Data Signal Positive Input
Data Signal Negative Input
Positive Power Supply
GND
IBIAS
IBMON
BSET
VCC
DATAP
DATAN
VCC
Exposed Pad
EP
Connect to the VCC or GND plane
Rev. 0 | Page 6 of 20
ADN2531
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, VCC = 3.3 V, crosspoint adjust disabled, unless otherwise noted.
35
10
8
30
25
20
15
10
5
10.7GBPS
11.3GBPS
6
4
2
0
0
10
30
50
70
10
20
30
40
50
60
70
80
I
(mA)
I
(mA)
MOD
MOD
Figure 7. Deterministic Jitter vs. IMOD
Figure 4. Rise Time vs. IMOD
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
35
30
25
20
15
10
5
0
10
20
30
40
50
60
70
80
10
20
30
40
I
50
60
70
80
I
(mA)
(mA)
MOD
MOD
Figure 8. Random Jitter vs. IMOD
Figure 5. Fall Time vs. IMOD
0
0
–5
–5
–10
–15
–20
–25
–30
–35
–40
–10
–15
–20
–25
–30
–35
0
2.5
5.0
7.5
10.0
12.5
15.0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. Differential |S11|
Figure 9. Differential |S22|
Rev. 0 | Page 7 of 20
ADN2531
10
9
8
7
6
5
4
3
2
1
30
25
20
15
10
5
10.7GBPS
11.3GBPS
0
–40
–20
0
20
40
60
80
–40
–20
0
20
40
60
80
100
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 10. Rise Time vs. Temperature
(Worse-Case Conditions, CPA Disabled)
Figure 13. Deterministic Jitter vs. Temperature
(Worse-Case Conditions, CPA Disabled)
30
25
20
15
10
5
75
65
55
45
35
25
15
V
V
V
= 3.0V
= 3.3V
= 3.6V
CC
CC
CC
0
–40
–20
0
20
40
60
80
2.4
1.0
1.2
1.4
1.6
1.8
2.0
2.2
TEMPERATURE (°C)
CPA INPUT PERIPHERAL VOLTAGE (V)
Figure 11. Fall Time vs. Temperature
(Worst-Case Conditions, CPA Disabled)
Figure 14. IMOD Eye Diagram Crosspoint vs. CPA Input Peripheral Voltage and VCC
(IMOD = 40 mA)
1.0
0.8
0.6
0.4
0.2
75
T
T
T
T
= –40°C
= +85°C
= +25°C
= +100°C
A
A
A
A
65
55
45
35
25
15
0
–40
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
–20
0
20
40
60
80
100
CPA INPUT PERIPHERAL VOLTAGE (V)
TEMPERATURE (°C)
Figure 12. Random Jitter vs. Temperature
(Worst-Case Conditions, CPA Disabled [Worst-Case IMOD = 40 mA])
Figure 15. IMOD Eye Diagram Crosspoint vs. CPA Input Peripheral Voltage and
Ambient Temperature (IMOD = 40 mA)
Rev. 0 | Page 8 of 20
ADN2531
135
130
125
120
115
110
105
100
95
280
260
240
220
200
180
160
140
120
100
80
R
= 5Ω
LOAD
100mA I
50mA I
BIAS
BIAS
R
= 12Ω
90
LOAD
85
80
75
70
65
R
= 50Ω
60
LOAD
55
50
45
40
10mA I
BIAS
35
30
60
25
20
40
15
10
20
5
0
0
0
20
40
60
80
0
0.2
0.4
0.6
0.8
1.0
1.2
I
CURRENT (mA)
MOD
V
(V)
MSET
Figure 16. Total Supply Current vs. IMOD and IBIAS
Figure 19. IMOD vs.VMSET at Various RLOAD Resistors
12
10
8
1 LEVEL
1 LEVEL
40mA
20mA
6
CROSSING
4
2
0 LEVEL
0 LEVEL
0
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
CH1 17.4mV/DIV
0V
CH2 16.4mV/DIV
–6.0mV
AVERAGE RISE/FALL TIME (ps)
Figure 17. Average Rise/Fall Time Distribution vs. IMOD
Figure 20. Electrical Eye Diagram
(IMOD = 40 mA, PRBS31 Pattern at 10.3125 Gbps)
120
110
100
90
80
70
60
50
40
30
20
10
0
T
T
T
= –40°C
= +25°C
= +85°C
A
A
A
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
(V)
V
BSET
Figure 18. IBIAS vs. VBEST at Various Temperatures
Figure 21. Filtered 10 Gb Ethernet Optical Eye Using NX8346TS DFB (PRBS31
Pattern at 10.3125 Gbps)
Rev. 0 | Page 9 of 20
ADN2531
TEST CIRCUIT
V
V
V
EE
EE
EE
750Ω
GND
10Ω
V
BSET
10nF
TP1
TP2
GND
BSET IBMON IBIAS GND
GND
VCC
VCC
GND
BIAS TEE
GND
GND
50Ω
50Ω
ADN2531
Z
= 50Ω
Z
= 50Ω
= 50Ω
Z
Z
= 50Ω
0
0
0
DC BLOCK
DC BLOCK
ADAPTER ATTENUATOR
ADAPTER ATTENUATOR
J2
DATAP
IMODP
GND
= 50Ω
GND
GND
= 50Ω
GND
OSCILLOSCOPE
200Ω
Z
Z
0
0
0
J3
DATAN
VCC
IMODN
VCC
50Ω
50Ω
GND
GND
GND
GND
GND
BIAS TEE
GND
GND
GND
MSET CPA ALS GND
V
MSET
BIAS TEE: PICOSECOND PULSE LABS MODEL 5542-219
ADAPTER: PASTERNACK PE9436 2.92mm
FEMALE-TO-FEMALE ADAPTER
ATTENUATOR: PASTERNACK PE7046-10 2.92mm
10dB ATTENUATOR
GND
10nF
10µF
V
V
EE
EE
V
EE
V
CPA
J8
J5
V
EE
GND GND
GND
Figure 22. High Speed Characterization Circuit
Rev. 0 | Page 10 of 20
ADN2531
THEORY OF OPERATION
ADN2531
As shown in Figure 1, the ADN2531 consists of an input stage and
two voltage-controlled current sources for bias and modulation.
The bias current is available at the IBIAS pin. It is controlled by the
voltage at the BSET pin and can be monitored at the IBMON pin.
The differential modulation current is available at the IMODP
and IMODN pins. It is controlled by the voltage at the MSET pin.
50Ω
50Ω
C
C
DATAP
DATAN
The output stage implements the active back-termination
circuitry for proper transmission line matching and power
consumption reduction. The ADN2531 can drive a load with
differential resistance ranging from 5 Ω to 140 Ω. The excellent
back-termination in the ADN2531 absorbs signal reflections
from the TOSA end of the output transmission lines, enabling
excellent optical eye quality to be achieved even when the
TOSA end of the output transmission lines is significantly
misterminated.
DATA SIGNAL SOURCE
Figure 24. AC Coupling the Data Source to the ADN2531 Data Inputs
BIAS CURRENT
The bias current is generated internally using a voltage-to-current
converter consisting of an internal operational amplifier and a
transistor, as shown in Figure 25.
V
CC
ADN2531
INPUT STAGE
I
BMON
BIAS
The input stage of the ADN2531 converts the data signal applied
to the DATAP and DATAN pins to a level that ensures proper
operation of the high speed switch. The equivalent circuit of the
input stage is shown in Figure 23.
BSET
IBMON
IBIAS
800Ω
I
V
CC
200Ω
200Ω
2Ω
DATAP
GND
V
CC
50Ω
50Ω
Figure 25. Voltage-to-Current Converter Used to Generate IBIAS
The BSET to IBIAS voltage-to-current conversion factor is set
at 100 mA/V by the internal resistors, and the bias current is
monitored at the IBMON pin using a current mirror with a gain
equal to 1/100. By connecting a 750 Ω resistor between IBMON
and GND, the bias current can be monitored as a voltage across
the resistor. A low temperature coefficient precision resistor must
be used for the IBMON resistor (RIBMON). Any error in the value
of RIBMON due to tolerances or drift in its value over temperature
contributes to the overall error budget for the IBIAS monitor voltage.
DATAN
Figure 23. Equivalent Circuit of the Input Stage
The DATAP and DATAN pins are terminated internally with a
100 Ω differential termination resistor. This minimizes signal
reflections at the input that could otherwise lead to degradation
in the output eye diagram. It is not recommended to drive the
ADN2531 with single-ended data signal sources.
If the IBMON voltage is being connected to an ADC for analog-
to-digital conversion, RIBMON should be placed close to the ADC to
minimize errors due to voltage drops on the ground plane. See the
Design Example section for example calculations of the accuracy of
the IBIAS monitor as a percentage of the nominal IBIAS value.
The ADN2531 input stage must be ac-coupled to the signal source
to eliminate the need for matching between the common-mode
voltages of the data signal source and the input stage of the driver
(see Figure 24). The ac coupling capacitors should have an
impedance less than 50 Ω over the required frequency range.
Generally, this is achieved using 10 nF to 100 nF capacitors, for
more than 1 Gbps operation.
Rev. 0 | Page 11 of 20
ADN2531
The equivalent circuits of the BSET, IBIAS, and IBMON pins
are shown in Figure 26 to Figure 28.
AUTOMATIC LASER SHUTDOWN (ALS)
The ALS pin is a digital input that enables/disables both the bias
and modulation currents, depending on the logic state applied,
as shown in Table 5.
V
CC
V
CC
BSET
800Ω
200Ω
Table 5. ALS Logic States
ALS Logic State
IBIAS and IMOD
Disabled
Enabled
High
Low
Figure 26. Equivalent Circuit of the BSET Pin
Floating
Enabled
V
CC
IBIAS
V
2kΩ
CC
The ALS pin is compatible with 3.3 V CMOS and LVTTL logic
levels. Its equivalent circuit is shown in Figure 30.
100Ω
V
V
CC
CC
10Ω
100Ω
42kΩ
ALS
Figure 27. Equivalent Circuit of the IBIAS Pin
2kΩ
V
V
CC
CC
Figure 30. Equivalent Circuit of the ALS Pin
500Ω
MODULATION CURRENT
The modulation current can be controlled by applying a dc
voltage to the MSET pin. This voltage is converted into a dc
current via a voltage-to-current converter that uses an
operational amplifier and a bipolar transistor, as shown in
Figure 31.
100Ω
V
CC
IBMON
Figure 28. Equivalent Circuit of the IBMON Pin
V
CC
The recommended configuration for the BSET, IBIAS, and
IBMON pins is shown in Figure 29.
TO LASER CATHODE
IMODP
IMODN
I
100Ω
MOD
L
I
FROM CPA STAGE
BIAS
IBIAS
MSET
ADN2531
400Ω
BSET
IBMON
R
IBMON
750Ω
GND
V
BSET
200Ω
ADN2531
GND
Figure 29. Recommended Configuration for BSET, IBIAS, and IBMON Pins
Figure 31. Generation of Modulation Current on the ADN2531
The circuit used to drive the BSET voltage must be able to drive
the 1 kΩ input resistance of the BSET pin. For proper operation
of the bias current source, the voltage at the IBIAS pin must be
between the compliance voltage specifications for this pin over
supply, temperature, and bias current range (see Table 1). The
maximum compliance voltage is specified for only two bias
current levels (10 mA and 100 mA), but it can be calculated for
any bias current by
The dc current is switched by the data signal applied to the
input stage (DATAP and DATAN pins) and gained up by the
output stage to generate the differential modulation current at
the IMODP and IMODN pins. The output stage also generates
the active back-termination, which provides proper transmission
line termination. Active back-termination uses feedback around
an active circuit to synthesize a broadband termination resistance.
This provides excellent transmission line termination while
dissipating less power than a traditional resistor passive back-
termination. No portion of the modulation current flows in the
active back-termination resistance. All of the preset modulation
current (IMOD), the range of which is specified in Table 1, flows
into the external load.
V
COMPLIANCE (V) = VCC (V) − 0.75 − 4.4 × IBIAS (A)
See the Headroom Calculations section for examples.
The function of Inductor L is to isolate the capacitance of the
IBIAS output from the high frequency signal path. For
recommended components, see Table 6.
Rev. 0 | Page 12 of 20
ADN2531
200
190
180
170
160
150
140
130
120
110
100
90
The equivalent circuits for the MSET, IMODP, and IMODN pins
are shown in Figure 32 and Figure 33. The two 50 Ω resistors in
Figure 33 represent the active back-termination resistance.
V
V
CC
CC
MAXIMUM
MSET
TYPICAL
MINIMUM
400Ω
200Ω
80
Figure 32. Equivalent Circuit of the MSET Pin
70
60
V
V
CC
CC
IMODN
IMODP
50
0
10
20
30
40
50
60
50Ω
50Ω
DIFFERENTIAL R
(Ω)
LOAD
Figure 35. MSET Voltage to Modulation Current Ratio vs.
Differential Load Resistance
7.7Ω
7.7Ω
Using the resistance of the TOSA, the user can calculate the
voltage range that should be applied to the MSET pin to
generate the required modulation current range (see the
example in the Applications Information section).
Figure 33. Equivalent Circuit of the IMODP and IMODN Pins
The recommended configuration of the MSET, IMODP, and
IMODN pins is shown in Figure 34. See Table 6 for recom-
mended components. When the voltage on DATAP is greater
than the voltage on DATAN, the modulation current flows into
the IMODP pin and out of the IMODN pin, generating an
optical Logic 1 level at the TOSA output when the TOSA is
connected as shown in Figure 34.
The circuit used to drive the MSET voltage must be able to
drive the 600 Ω resistance of the MSET pin. To be able to drive
80 mA modulation currents through the differential load, the
output stage of the ADN2531 (IMODP and IMODN pins) must
be ac-coupled to the load. The voltages at these pins have a dc
component equal to VCC and an ac component with single-ended
peak-to-peak amplitude of IMOD × 50 Ω. This is the case when the
load impedance (RTOSA) is less than 100 Ω differential because
the transmission line characteristic impedance sets the peak-to-
peak amplitude. For the case where RTOSA is greater than 100 Ω,
the single-ended, peak-to-peak amplitude is IMOD × RTOSA ÷ 2.
IBIAS
V
CC
L
L
ADN2531
Z
= 25Ω
Z
Z
= 25Ω
= 25Ω
0
0
C
C
For proper operation of the output stage, the voltages at the
IMODP and IMODN pins must be between the compliance
voltage specifications for this pin over supply, temperature, and
modulation current range, as shown in Figure 36. See the
Headroom Calculations section for examples of headroom
calculations.
IMODP
FP/DFB
TOSA
Z
= 100Ω
= 25Ω
L
Z
0
0
IMODN
MSET
GND
V
MSET
L
L
V
V
V
IMODP, IMODN
V
CC
CC
Figure 34. Recommended Configuration for the
MSET, IMODP, and IMODN Pins
V
CC
+ 1.1V
The ratio between the voltage applied to the MSET pin and the
differential modulation current available at the IMODP and
IMODN pins is a function of the load resistance value, as shown
in Figure 35.
NORMAL OPERATION REGION
V
CC
V
– 1.1V
CC
Figure 36. Allowable Range for the Voltage at IMODP and IMODN
Rev. 0 | Page 13 of 20
ADN2531
Considering VBSET/IBIAS = 10 V/A as the conversion factor from
BSET to IBIAS, the dissipated power becomes
LOAD MISTERMINATION
V
Due to its excellent S22 performance, the ADN2531 can drive
differential loads that range from 5 Ω to 140 Ω. In practice, many
TOSAs have differential resistance not equal to 100 Ω. In this
case, with 100 Ω differential transmission lines connecting the
ADN2531 to the load, the load end of the transmission lines are
misterminated. This mistermination leads to signal reflections
back to the driver. The excellent back-termination in the ADN2531
absorbs these reflections, preventing their reflection back to the
load. This enables excellent optical eye quality to be achieved even
when the load end of the transmission lines is significantly mis-
terminated. The connection between the load and the ADN2531
must be made with 100 Ω differential (50 Ω single-ended)
transmission lines so that the driver end of the transmission
lines is properly terminated.
V
VBSET
10V / A
⎛
⎜
⎞
⎠
⎛
⎜
⎞
⎟
MSET
P =VCC
×
+ ISUPPLY +V
×
IBIAS
⎟
5.8
⎝
⎝
⎠
To ensure long-term reliable operation, the ADN2531 junction
temperature must not exceed 150°C, as specified in Table 3. For
improved heat dissipation, the module case can be used as a
heat sink, as shown in Figure 38.
THERMAL COMPOUND
MODULE CASE
T
TOP
DIE
T
THERMOCOUPLES
J
PACKAGE
T
PAD
CROSSPOINT ADJUST
PCB
The crossing level in the output electrical eye diagram can be
adjusted between 35% and 65% using the crosspoint adjust (CPA)
control input. This can be used to compensate for asymmetry in
the laser response and to optimize the optical eye mask margin.
The CPA input is a voltage-control input, and a plot of eye cross-
point vs. CPA control voltage is shown in Figure 14 and Figure 15
in the Typical Performance Characteristics section. The equivalent
circuit for the CPA pin is shown in Figure 37. To disable the
crosspoint adjust function and set the eye crossing to 50%, the
COPPER PLANE
VIAS
Figure 38. Typical Optical Module Structure
A compact optical module is a complex thermal environment, and
calculations of device junction temperature using the junction-to-
ambient thermal resistance (θJA) of the package do not yield
accurate results. The following equation, derived from the
model in Figure 39, can be used to estimate the IC junction
temperature:
CPA pin should be tied to VCC
.
P ×
θJ −PAD × θJ −TOP
+ TTOP × θJ −PAD + TPAD × θJ −TOP
TJ =
θJ −PAD + θJ −TOP
7kΩ
7kΩ
where:
7kΩ
TTOP is the temperature at the top of the package in °C.
TPAD is the temperature at the package exposed paddle in °C.
TJ is the IC junction temperature in °C.
V
CC
P is the ADN2531 power dissipation in watts.
CPA
θ
J-TOP is the thermal resistance from the IC junction to the top of
the package.
J-PAD is the thermal resistance from the IC junction to the
exposed paddle of the package.
Figure 37. Equivalent Circuit for CPA Pin
θ
POWER CONSUMPTION
The power dissipated by the ADN2531 is given by
T
TOP
V
⎛
⎜
⎞
⎠
MSET
P = VCC
×
+ ISUPPLY + V
× IBIAS
IBIAS
⎟
T
θJ-TOP
TOP
5.8
⎝
T
J
where:
CC is the power supply voltage.
BIAS is the bias current generated by the ADN2531.
MSET is the voltage applied to the MSET pin.
SUPPLY is the sum of the current that flows into the VCC, IMODP,
and IMODN pins when VBSET = VMSET = 0 (see Table 1).
IBIAS is the average voltage on the IBIAS pin.
P
θJ-PAD
V
I
V
I
T
PAD
T
PAD
Figure 39. Electrical Model for Thermal Calculations
V
TTOP and TPAD can be determined by measuring the temperature
at points inside the module, as shown in Figure 38. The thermo-
couples should be positioned to obtain an accurate measurement of
the temperatures of the package top and paddle. θJ-TOP and θJ-PAD
are given in Table 2.
Rev. 0 | Page 14 of 20
ADN2531
APPLICATIONS INFORMATION
the low frequency cutoff performance is dependent on the dc
blocking capacitance and the transmission line impedance. For
additional applications information and optical eye diagram
performance data, consult the relevant application notes on the
ADN2531 product page at www.analog.com.
TYPICAL APPLICATION CIRCUIT
Figure 40 shows a typical application circuit for the ADN2531.
The dc voltages applied to the BSET and MSET pins control the
bias and modulation currents. The bias current can be monitored
as a voltage drop across the 750 Ω resistor connected between
the IBMON pin and GND. The dc voltage applied to the CPA
pin controls the crosspoint in the output eye diagram. By tying
the CPA pin to VCC, the CPA function is disabled. The ALS pin
allows the user to turn the bias and modulation currents on and
off, depending on the logic level applied to the pin. The data
signal source must be connected to the DATAP and DATAN
pins of the ADN2531 using 50 Ω transmission lines. The
modulation current outputs, IMODP and IMODN, must be
connected to the load (TOSA) using 100 Ω differential (50 Ω
single-ended) transmission lines.
Table 6. Recommended Components
Component
Value
110 Ω
300 Ω
Varies
Description
R1, R2
R3, R4
R13, R14
0603 size resistor
0603 size resistor
The resistor value and size are TOSA
load impedance dependent
C3, C4
100 nF
160 nH
0402 size capacitor,
Phycomp 223878719849
0603 size inductor,
L6, L7
Murata LQW18ANR16
L2, L3
0603 size chip ferrite bead, Murata
BLM18HG601
Table 6 provides a list of recommended components for the ac
coupling interface between the ADN2531 and the TOSA. The
reference circuit can support up to 11.3 Gbps applications, and
L1, L4, L5, L8
10 μH
0805 size inductor,
Murata LQM21FN100M70L
C8
100nF
V
CC
GND
R5
V
CC
GND
750Ω
C5
10nF
BSET
TP1
L1
L8
R1
R4
V
CC
BSET IBMON IBIAS GND
V
VCC
VCC
V
CC
CC
R14
L2
L7
Z
Z
= 50Ω
Z
Z
= 50Ω
Z
0
= 50Ω
0
0
DATAP
DATAN
DATAP
IMODP
C1
C4
GND
= 50Ω
TOSA
ADN2531
= 50Ω
Z
0
= 50Ω
0
0
DATAN
VCC
IMODN
VCC
C2
C3
R13
GND
L3
L6
V
V
CC
CC
MSET CPA ALS GND
V
CC
L4
R2 L5
R3
C6
MSET
+3.3V
10nF
V
CC
GND
C7
20µF
CPA ALS
V
V
CC
CC
GND
Figure 40. Typical ADN2531 Application Circuit
Rev. 0 | Page 15 of 20
ADN2531
Therefore, VIBIAS = 1.32 V > 0.6 V, which satisfies the requirement
LAYOUT GUIDELINES
The maximum voltage at the IBIAS pin must be less than the
maximum IBIAS compliance specification as described by
Due to the high frequencies at which the ADN2531 operates,
care should be taken when designing the PCB layout to obtain
optimum performance. For example, use controlled impedance
transmission lines for high speed signal paths, and keep the
length of transmission lines as short as possible to reduce losses
and pattern-dependent jitter. In addition, the PCB layout must
be symmetrical, both on the DATAP and DATAN inputs and on
the IMODP and IMODN outputs, to ensure a balance between
the differential signals.
VCOMPLIANCE_MAX = VCC − 0.75 − 4.4 × IBIAS (A)
For this example,
VCOMPLIANCE_MAX = VCC − 0.75 − 4.4 × 0.04 = 2.374 V
Therefore, VIBIAS = 1.32 V < 2.374 V, which satisfies the
requirement.
To calculate the headroom at the modulation current pins
(IMODP and IMODN), the voltage has a dc component equal
to VCC due to the ac-coupled configuration and a swing equal to
Furthermore, all VCC and GND pins must be connected to
solid copper planes by using low inductance connections. When
these connections are made through vias, multiple vias can be
connected in parallel to reduce the parasitic inductance. Each
GND pin must be locally decoupled to VCC with high quality
capacitors (see Figure 40). If proper decoupling cannot be
achieved using a single capacitor, use multiple capacitors in
parallel for each GND pin. A 20 μF tantalum capacitor must be
used as the general decoupling capacitor for the entire module.
IMOD × 50 Ω because RTOSA is less than 100 Ω. For proper
operation of the ADN2531, the voltage at each modulation
output pin should be within the normal operation region shown
in Figure 36.
Assuming the dc voltage drop across L1, L2, L3, and L4 is 0 V
and IMOD is 40 mA, the minimum voltage at the modulation
output pins is equal to
For recommended PCB layouts, including those suitable for the
SFP+ and XFP modules, contact sales. For guidelines on the
surface-mount assembly of the ADN2531, see the AN-772
Application Note, A Design and Manufacturing Guide for the
Lead Frame Chip Scale Package (LFCSP), on www.analog.com.
VCC − (IMOD × 12)/2 = VCC − 0.24 V
Therefore, VCC − 0.24 > VCC − 1.1 V, which satisfies the
requirement.
The maximum voltage at the modulation output pins is equal to
DESIGN EXAMPLE
VCC + (IMOD × 12)/2 = VCC + 0.24 V
Assuming that the impedance of the TOSA is 12 Ω, the forward
voltage of the laser at low current is VF = 1.5 V, IBIAS = 40 mA,
IMOD = 40 mA, and VCC = 3.3 V, this design example calculates
Therefore, VCC + 0.24 < VCC + 1.1 V, which satisfies the
requirement.
Headroom calculations must be repeated for the minimum and
maximum values of the required IBIAS and IMOD ranges to ensure
proper device operation over all operating conditions.
•
•
The headroom for the IBIAS, IMODP, and IMODN pins.
The typical voltage required at the BSET and MSET pins to
produce the desired bias and modulation currents.
The IBIAS monitor accuracy over the IBIAS current range.
BSET and MSET Pin Voltage Calculations
•
To set the desired bias and modulation currents, the BSET and
MSET pins of the ADN2531 must be driven with the appropriate
dc voltage. The voltage range required at the BSET pin to generate
the required IBIAS range can be calculated using the BSET voltage to
Headroom Calculations
To ensure proper device operation, the voltages on the IBIAS,
IMODP, and IMODN pins must meet the compliance voltage
specifications in Table 1.
I
BIAS gain specified in Table 1. Assuming that IBIAS = 40 mA and that
IBIAS/VBSET = 100 mA/V (which is the typical IBIAS/VBSET ratio), the
Considering the typical application circuit shown in Figure 40,
the voltage at the IBIAS pin can be written as
BSET voltage is given by
IBIAS (mA)
40
VIBIAS = VCC − VF − (IBIAS × RTOSA) − VLA
VBSET
=
=
= 0.4 V
100 mA/V 100
The BSET voltage range can be calculated using the required
BIAS range and the minimum and maximum BSET voltage to
where:
VCC is the supply voltage.
VF is the forward voltage across the laser at low current.
RTOSA is the resistance of the TOSA.
VLA is the dc voltage drop across L5, L6, L7, and L8.
I
IBIAS gain values specified in Table 1.
The voltage required at the MSET pin to produce the desired
modulation current can be calculated using
For proper operation, the minimum voltage at the IBIAS pin
should be greater than 0.6 V, as specified by the minimum
IBIAS compliance specification in Table 1.
IMOD
K
VMSET
=
Assuming that the voltage drop across the 50 Ω transmission lines
is negligible and that VLA = 0 V, VF = 1.5 V, and IBIAS = 40 mA,
where K is the MSET voltage to IMOD ratio.
VIBIAS = 3.3 − 1.5 − (0.04 × 12) = 1.32 V
Rev. 0 | Page 16 of 20
ADN2531
The value of K depends on the actual resistance of the TOSA
and can be obtained from Figure 35. For a TOSA resistance of
This example assumes that the nominal value of IBIAS is 40 mA
and that the IBIAS range for all operating conditions is 10 mA to
80 mA. The accuracy of the IBIAS to IBMON ratio is given in Table 1
and is plotted in Figure 41.
12 Ω, the typical value of K is 110 mA/V. Assuming that IMOD
40 mA and using the preceding equation, the MSET voltage is
given by
=
Referring to Figure 41, the IBMON output current accuracy is
4.3% for the minimum IBIAS of 10 mA and 3.0% for the
maximum IBIAS value of 80 mA.
I MOD (mA)
40
VMSET
=
=
= 0.36 V
110 mA/V 110
The MSET voltage range can be calculated using the required
MOD range and the minimum and maximum K values. These
The accuracy of the IBMON output current as a percentage of
the nominal IBIAS is given by
I
4.3
100
values can be obtained from the minimum and maximum
curves in Figure 35.
IBMON _ AccuracyMIN =10 mA
×
= ±1.075%
100 40 mA
IBIAS Monitor Accuracy Calculations
for the minimum IBIAS value, and by
6
3.0
100
IBMON _ AccuracyMAX = 80 mA
×
= ± 6.0%
100 40 mA
5
4
3
2
1
0
for the maximum IBIAS value. This gives a worse-case accuracy
for the IBMON output current of 6.0% of the nominal IBIAS
value over all operating conditions. The IBMON output current
accuracy numbers can be combined with the accuracy numbers
for the 750 Ω IBMON resistor (RIBMON) and any other error
sources to calculate an overall accuracy for the IBMON voltage.
0
20
40
60
80
100
I
(mA)
BIAS
Figure 41. Accuracy of IBIAS to IBMON Ratio
Rev. 0 | Page 17 of 20
ADN2531
OUTLINE DIMENSIONS
0.50
0.40
0.30
0.60 MAX
3.00
BSC SQ
PIN 1
INDICATOR
BOTTOM VIEW
*
1.65
1.50 SQ
1.35
13
12
16
1
0.45
PIN 1
INDICATOR
2.75
BSC SQ
TOP
VIEW
EXPOSED
PAD
4
9
8
0.50
BSC
5
0.25 MIN
1.50 REF
0.80 MAX
12° MAX
0.65 TYP
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
0.90
0.85
0.80
0.05 MAX
0.02 NOM
SECTION OF THIS DATA SHEET.
SEATING
PLANE
0.30
0.23
0.18
0.20 REF
*
COMPLIANT TO JEDEC STANDARDS MO-220-VEED-2
EXCEPT FOR EXPOSED PAD DIMENSION.
Figure 42. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
3 mm × 3 mm Body, Very Thin Quad
(CP-16-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model
Temperature Range
−40°C to +100°C
−40°C to +100°C
−40°C to +100°C
Package Description
Package Option
CP-16-3
CP-16-3
Branding
F0K
F0K
ADN2531ACPZ-WP1
ADN2531ACPZ-R21
ADN2531ACPZ-R71
EVAL-ADN2531-NTZ1
EVAL-ADN2531-NPZ1
16-Lead LFCSP_VQ, 50-Piece Waffle Pack
16-Lead LFCSP_VQ, 250-Piece Reel
16-Lead LFCSP_VQ, 1,500-Piece Reel
Optical Evaluation Board Without Laser Populated
Optical Evaluation Board with Laser Populated
CP-16-3
F0K
1 Z = RoHS Compliant Part.
Rev. 0 | Page 18 of 20
ADN2531
NOTES
Rev. 0 | Page 19 of 20
ADN2531
NOTES
©2009 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07881-0-9/09(0)
Rev. 0 | Page 20 of 20
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